CN104471725A - 包含n掺杂硅的太阳能电池 - Google Patents
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- 239000002019 doping agent Substances 0.000 description 11
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- 239000011574 phosphorus Substances 0.000 description 8
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Abstract
本发明涉及一种光伏打装置，包括具有N掺杂硅基的第一半导体区域(2)，及具有P掺杂硅的第二半导体区域(3)。该两个半导体区域构造为形成PN结。该第一半导体区域(2)无硼且包含浓度至少等于N型掺杂杂质的浓度的20％的P型掺杂杂质。
Description
技术领域
本发明涉及一种太阳能电池，其具备由N掺杂硅制成的区域，该区域与由P掺杂硅制成的区域形成PN结。
背景技术
在光伏打装置的领域中，通常存在PN类型的结，其形成于半导体材料中且被加偏压。由半导体材料俘获的光子的一部分被变换成电子-空穴对，此情形在光伏打装置内部诱发电流。
正在进行相当大量的工作以便增加光伏打装置的转换效率，即，增加针对给定量的入射光能量所产生的电能的量。然而，所获得的改良还必须能够以折衷的整合成本容易地整合以便限制光伏打装置的最终价格。
发明内容
可观察到，需要提供在制造方面继续保持简单且廉价的同时呈现改良型效能的光伏打装置。
此目标倾向于借助于一种光伏打装置而达成，该光伏打装置包括：
第一半导体区域，其由N掺杂硅制成；
第二半导体，其由P掺杂硅制成且构造成与该第一半导体区域形成PN或PIN结；
且其中该第一半导体区域包含浓度至少等于N型掺杂杂质的浓度的20％的P型掺杂杂质。
附图说明
其它优点及特征将自本发明的特定实施例的以下描述变得更清楚地显而易见，这些实施例仅出于非限制性示例目的而给出且在附加图示中予以表示。在这些图示中，图1及图2用横截面以示意性方式表示两个光伏打装置。
具体实施方式
如图1及图2所示，光伏打电池1由硅制成，即，该光伏打电池在半导体区域中包含至少50％的硅。以甚至更佳方式，该光伏打电池至少包含也被称作基板的第一半导体区域2。此第一半导体区域2以硅为基础且为N掺杂的。可通过添加一或更多种电掺杂杂质来获得N型掺杂。此等N型掺杂杂质有利地选自P、As、Sb及Li。
光伏打电池1还包含第二以硅为基础的半导体区域3。此第二半导体区域3为P掺杂的，且其配置成与第一N型半导体区域2形成PN结或PIN结。P型第二半导体区域3由电掺杂杂质掺杂，该电掺杂杂质有利地选自B、Ga、In、Al及Ti。在特别有利的实施例中，第一半导体区域具有至少等于1微米的厚度，或第一半导体区域表示太阳能电池的半导体体积的最大部分。
有利的方式是，P型第二半导体区域3无硼原子，即，硼浓度小于10ppba。在替代实施例中，硼原子的浓度小于0.2ppma。此低硼浓度使光诱发性降级(Light Induced Degradation)对寿命的影响能够受到限制。
在特定实施例中，第一N型半导体区域2相比于第二P型半导体区域3具有大得多的厚度。相比于具有第一P型半导体区域2的太阳能电池，第一N型半导体区域2的使用使晶体缺陷及金属杂质(也被称作金属污染物，诸如，铁)的电冲击能够受到限制。看起来，此电特性的改良可解释为电子空穴具有比电子更小的有效俘获横截面。
优选的方式是，光伏打装置1配置成使得待收集辐射经由第二半导体区域3而进入。然而，亦有可能使入射辐射经由相对表面而进入。在特别有利的方式中，电活性光伏打装置1的主要部分通过N掺杂材料形成，该N掺杂材料限制了在照明下的寄生降级现象及与金属杂质有联系的电属性减损的程度。在特定实施例中，提供初始N掺杂基板，且接着对该基板进行掺杂以形成P型区域及关联PN结。为了促进太阳能电池的形成，在初始基板中，P掺杂区域在范围上小于N掺杂区域。
在特别有利的实施例中，用于主要部分N型的第一半导体区域2也掺杂有优选地选自Ga、Al、In、Ti的P型掺杂杂质。第一半导体区域2为共掺杂的，即，该第一半导体区域包含以相似比例的P型掺杂杂质及N型掺杂杂质。
在第一半导体区域2中，P型掺杂杂质的浓度至少等于N型掺杂杂质的浓度的20％。发明人已发现，此实施例使少数载流子的扩散率能够减小，从而使少数载流子的再结合能够受到限制。此效应由通过光伏打装置中的载流子的寿命的相当大的增加进行表示，该增加使该装置的转换效率能够增加。相比于现有的电池，借助于此半导体基板而形成的光伏打电池在两个相对面之间呈现增加的电压。
出于示例目的，当PN结配置成接近于基板的前表面时，第一半导体区域2的共掺杂使少数载流子在后表面上的再结合能够受到限制。
共掺杂第一半导体区域2的使用(即，同时呈现以略微等效比例的P型电掺杂剂及N型电掺杂剂)特别有利，因为该使用使电池的转换效率能够以廉价方式增加。
有利的方式是，第一半导体区域2的共掺杂部分自第一半导体区域与第二半导体区域之间的界面(PN结)延伸直至第一半导体区域2的相对表面，接触连接位于该相对表面处。这些接触连接可通过一或更多个金属凸块或通过导电层达成。接触连接设计成自光伏打装置输出电流。出于示例目的，这些接点可配置于前表面及后表面上。
优选的方式是，第二半导体区域3无硼原子，或硼原子的浓度小于0.02ppma。这尤其使光伏打装置的效率能够进一步增加。
在特定实施例中，第一N型半导体区域2也包含掺杂部分4且更特定地包含更强掺杂部分，这些部分通向基板的后表面以便促进电装置经由后表面的电接触。掺杂部分4具有浓度小于N型掺杂杂质的浓度的20％的P型掺杂杂质。以此方式，在半导体材料的表面处，存在具有浓度至少等于N型掺杂杂质的浓度的20％的P型掺杂杂质的第一部分，及具有浓度小于N型掺杂杂质的浓度的20％的P型掺杂杂质的第二部分。因此，存在具有不同电阻率值的两种类型的部分，这些部分向外通向半导体材料的表面。有利的方式是，P型掺杂剂的浓度在两个邻近N型部分中相同。有利的是基于电阻率减小的事实而在第二部分4中进行电接触连接。
在另一实施例中，第一N型半导体区域2包括覆盖基板的整个主表面的单一掺杂部分4。第一部分的相对表面形成PN结。在此结构中，可以以下方式P/N/N+来表示结构。
掺杂部分4表示电池的小厚度，使得若在第一半导体区域中P型掺杂剂的比例小于P型掺杂剂的比例，则影响可忽略。通常，掺杂部分4具有小于或等于1微米的厚度。
举例而言，对于具有N掺杂(几乎独占式地由磷以等于0.1ppm的浓度进行掺杂)的第一半导体区域2的太阳能电池，有利的是具有相反类型的掺杂，例如，由镓以至少等于0.02ppma的浓度进行掺杂。相比于没有第一半导体区域2的P型掺杂的太阳能电池，此太阳能电池的少数载流子的寿命得到增加，从而实现了改良型效率。
此特定光伏打电池针对不同掺杂含量(尤其是在0.001ppma至0.01ppma的磷范围内)呈现良好结果，该磷范围对应于极弱掺杂光伏打电池。针对具有包含于0.01ppma与0.1ppma之间的磷浓度的光伏打电池，也获得良好结果，该磷浓度对应于中等掺杂光伏打电池。
针对强掺杂光伏打电池(即，针对具有包含于0.1ppm与1ppma之间的磷浓度的电池)获得等效结果。令人惊讶地，当第一半导体区域中的磷浓度包含于1ppma与10ppma之间时，极强掺杂光伏打电池也展示极好结果。
前述内容中指示的结果虽然针对磷掺杂来说明，但可针对任何其它N型电子掺杂剂及针对后者的组合来扩展这些结果。该结果可使此特定光伏打电池能够用电子级硅、太阳能级硅或甚至纯化冶金级硅进行实施。变得有可能以低成本来改良电池的转换效率。
虽然通常容许少数载流子的寿命随着电活性杂质的浓度增加而逐渐地减低，但已发现即使光伏打电池含有高总浓度的掺杂杂质时也保持光伏打装置中载流子的可接受寿命的手段。
第一半导体区域2可为单晶体或多结晶体。第二半导体区域3可为单晶体或多结晶体。有利的方式是，该两个半导体区域呈现相同结晶性。还可设想具有处于非晶态的一个或两个半导体区域以便形成具有异质结的光伏打电池。
有利的是形成具有浓度小于P型掺杂剂的浓度的10％的N型掺杂剂的第二P型半导体区域3。
再次，有利的是形成一或更多个超级掺杂区域5，该一或更多个超级掺杂区域5通向层3的表面以便促进电接触连接(图1)。掺杂区域5属于与第二半导体层3的导电类型相同的导电类型，即，掺杂区域5为P型，其电阻率低于第二半导体层3的其余部分的电阻率。取决于所使用的实施例，掺杂区域可覆盖基板的整个表面或形成一或更多个区域。
在特别有利实施例中，第一半导体区域及第二半导体区域为由单一半导体材料块体形成，以便限制会减小装置在垂直于外加电场的方向上的总体电效能的界面。甚至更有利的方式是，此半导体材料块体为共掺杂的且最初为N型，即，该块体遍及整个厚度包含用于主要部分N型的掺杂及少数P型掺杂，P型掺杂剂的浓度包含于N型掺杂剂的浓度的20％与100％之间。
接着对该块体的表面中的一者进行掺杂以便形成PN结、第二半导体区域3及第一半导体区域2。以此方式，P型掺杂杂质的浓度在第一部分及第二部分中相同，从而较容易地主控光伏打装置中诱发的电场。
光伏打电池包括多个凸块，该多个凸块形成于基板的表面中的一者上或形成于基板的两个相对表面上且构造成连接该电池与外部。
Claims (6)
1.一种光伏打装置，包括：
第一半导体区域(2)，其由N掺杂硅制成；
第二半导体区域(3)，其由P掺杂硅制成且构造成与该第一半导体区域(2)形成PN或PIN结；
其特征在于，该第一半导体区域(2)包含浓度至少等于N型掺杂杂质的浓度的20％的P型掺杂杂质。
2.如权利要求1所述的装置，其特征在于，该第一N型半导体区域(2)至少由选自Ga、In、Al、Ti的第一掺杂杂质掺杂，该第一N型半导体区域(2)无硼。
3.如权利要求1及2中任一项所述的装置，其特征在于，该第一N型半导体区域(2)至少由选自P、As、Sb、Li的第二掺杂杂质掺杂。
4.如权利要求1至3中任一项所述的装置，其特征在于，该装置包括单块半导体组件，该第一N型半导体区域(2)及该第二P型半导体区域(3)形成于该单块半导体组件内部。
5.如权利要求1至4中任一项所述的装置，其特征在于，该第一N型半导体区域(2)包括：一或更多个第一部分(2)，该第一部分(2)通向表面且具有浓度至少等于N型掺杂杂质的浓度的20％的P型掺杂杂质；及一或更多个第二掺杂部分(4)，该第二掺杂部分(4)通向该表面且具有浓度小于N型掺杂杂质的浓度的20％的P型掺杂杂质。
6.如权利要求5所述的装置，其特征在于，P型掺杂杂质的该浓度在这些第一及第二部分(2、4)中相同。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1201382A FR2990563B1 (fr) | 2012-05-11 | 2012-05-11 | Cellule solaire a base de silicium dope de type n |
| FR12/01382 | 2012-05-11 | ||
| PCT/FR2013/000056 WO2013167815A1 (fr) | 2012-05-11 | 2013-02-28 | Cellule solaire à base de silicium dopé de type n |
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| Publication Number | Publication Date |
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| CN104471725A true CN104471725A (zh) | 2015-03-25 |
| CN104471725B CN104471725B (zh) | 2017-05-17 |
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| Country | Link |
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| US (1) | US20150136211A1 (zh) |
| EP (1) | EP2847801A1 (zh) |
| JP (1) | JP2015516115A (zh) |
| CN (1) | CN104471725B (zh) |
| FR (1) | FR2990563B1 (zh) |
| PH (1) | PH12014502439A1 (zh) |
| SG (1) | SG11201407151UA (zh) |
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| WO (1) | WO2013167815A1 (zh) |
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| CN101999013A (zh) * | 2008-04-11 | 2011-03-30 | 阿波朗.索拉尔公司 | 通过添加掺杂杂质制造光伏级晶体硅的方法及光伏电池 |
| CN102084491A (zh) * | 2008-07-01 | 2011-06-01 | 太阳能研究所股份有限公司 | 带有具有整合的掺杂分布的吸收体的异质结太阳能电池 |
| US20110284060A1 (en) * | 2010-05-24 | 2011-11-24 | Doo-Youl Lee | Solar cell and method of fabricating the same |
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| JPS55153371A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Manufacturing method of complementary mis semiconductor device |
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| JPH07263728A (ja) * | 1994-03-23 | 1995-10-13 | Fuji Electric Corp Res & Dev Ltd | 薄膜太陽電池の製造方法 |
| JP3386101B2 (ja) * | 1996-08-29 | 2003-03-17 | シャープ株式会社 | 半導体装置の製造方法 |
| JP3394408B2 (ja) * | 1997-01-13 | 2003-04-07 | 株式会社リコー | 半導体装置及びその製造方法 |
| US6262359B1 (en) * | 1999-03-17 | 2001-07-17 | Ebara Solar, Inc. | Aluminum alloy back junction solar cell and a process for fabrication thereof |
| DE60026286T2 (de) * | 1999-05-28 | 2006-11-09 | Shin-Etsu Handotai Co., Ltd. | MIT Ga DOTIERTER CZOCHRALSKI-EINKRISTALL UND WAFER UND VERFAHREN ZU DEREN HERSTELLUNG |
| JP2004221149A (ja) * | 2003-01-10 | 2004-08-05 | Hitachi Ltd | 太陽電池の製造方法 |
| US20060043531A1 (en) * | 2004-08-27 | 2006-03-02 | Varian Semiconductor Equipment Associates, Inc. | Reduction of source and drain parasitic capacitance in CMOS devices |
| DE102005061820B4 (de) * | 2005-12-23 | 2014-09-04 | Infineon Technologies Austria Ag | Verfahren zur Herstellung einer Solarzelle |
| JP5414298B2 (ja) * | 2009-02-13 | 2014-02-12 | 信越化学工業株式会社 | 太陽電池の製造方法 |
| US8110431B2 (en) * | 2010-06-03 | 2012-02-07 | Suniva, Inc. | Ion implanted selective emitter solar cells with in situ surface passivation |
| KR20120040016A (ko) * | 2010-10-18 | 2012-04-26 | 엘지전자 주식회사 | 태양 전지용 기판 및 태양 전지 |
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2012
- 2012-05-11 FR FR1201382A patent/FR2990563B1/fr active Active
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- 2013-02-28 SG SG11201407151UA patent/SG11201407151UA/en unknown
- 2013-02-28 CN CN201380024709.9A patent/CN104471725B/zh not_active Expired - Fee Related
- 2013-02-28 WO PCT/FR2013/000056 patent/WO2013167815A1/fr active Application Filing
- 2013-02-28 EP EP13715266.6A patent/EP2847801A1/fr not_active Withdrawn
- 2013-02-28 JP JP2015510852A patent/JP2015516115A/ja active Pending
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101999013A (zh) * | 2008-04-11 | 2011-03-30 | 阿波朗.索拉尔公司 | 通过添加掺杂杂质制造光伏级晶体硅的方法及光伏电池 |
| CN102084491A (zh) * | 2008-07-01 | 2011-06-01 | 太阳能研究所股份有限公司 | 带有具有整合的掺杂分布的吸收体的异质结太阳能电池 |
| US20110284060A1 (en) * | 2010-05-24 | 2011-11-24 | Doo-Youl Lee | Solar cell and method of fabricating the same |
Also Published As
| Publication number | Publication date |
|---|---|
| PH12014502439A1 (en) | 2015-01-26 |
| FR2990563A1 (fr) | 2013-11-15 |
| WO2013167815A1 (fr) | 2013-11-14 |
| CN104471725B (zh) | 2017-05-17 |
| SG11201407151UA (en) | 2014-12-30 |
| FR2990563B1 (fr) | 2014-05-09 |
| TW201403836A (zh) | 2014-01-16 |
| JP2015516115A (ja) | 2015-06-04 |
| EP2847801A1 (fr) | 2015-03-18 |
| US20150136211A1 (en) | 2015-05-21 |
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