CN104465964B - LED packaging structure - Google Patents
LED packaging structure Download PDFInfo
- Publication number
- CN104465964B CN104465964B CN201410640012.0A CN201410640012A CN104465964B CN 104465964 B CN104465964 B CN 104465964B CN 201410640012 A CN201410640012 A CN 201410640012A CN 104465964 B CN104465964 B CN 104465964B
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- China
- Prior art keywords
- led
- microballoon
- light
- chip
- translucent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004806 packaging method and process Methods 0.000 title abstract description 9
- 239000000463 material Substances 0.000 claims abstract description 26
- 239000011347 resin Substances 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 8
- 239000003595 mist Substances 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 8
- 238000004020 luminiscence type Methods 0.000 claims description 6
- 238000002834 transmittance Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 239000004005 microsphere Substances 0.000 abstract description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 abstract 2
- 239000012790 adhesive layer Substances 0.000 abstract 1
- 239000002356 single layer Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 238000005034 decoration Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
Abstract
The invention provides an LED packaging structure which comprises a silicon carbide heat-dissipating substrate, an LED light-emitting chip, a packaging adhesive layer doped with fluorescent materials and fog light layer. The fog light layer comprises resin adhesive and a plurality of single-layer semitransparent microspheres which are horizontally laid and scattered in the resin adhesive. Part of the sides, close to a light-emitting face, of the semitransparent microspheres are removed so that semispherical concave surfaces can be formed. According to the LED packaging structure, light rays can become soft, ring-shaped bright points exist, and the LED packaging structure is suitable for indoor decorative lighting.
Description
Technical field
The present invention relates to led field of illumination lamp technology, especially a kind of interior decoration illumination field.
Background technology
The basic structure of led is to be formed with pn-junction or electroluminescent semi-conducting material is placed on lead frame, then surrounding
With epoxy sealing, play the effect of protection internal core, so the shock resistance of led is good.Meanwhile, LED light source very energy-conservation,
From vehement streetlamp energy-saving 80%, most of led is applied to exterior decoration illumination, such as stop-light and building to its ratio at present
Wall body decoration illumination and Landscape Lighting.The light that these illuminating lamps issue is very bright to be given people one and more really feels
Feel although colourful, but human eye feels it is a kind of dazzle, the generation of dazzle is that spot light is irradiated to mask and rolls over by led
The light shooting out, adds, because luminous point does not closely have the uniform effect of diffused light with a distance from mask, the cambered surface that mask is formed,
So reflect just towards different directions.
Therefore, the decorative lighting at present LED light source being applied to indoor environment is not also a lot, in order to expand led illumination
Utilization field, the present invention be directed to the problems referred to above propose a kind of led encapsulating structure that can send soft light, to fitting
Answer indoor decorative lighting.
Content of the invention
To achieve these goals, the invention provides a kind of led encapsulating structure, including carborundum heat-radiating substrate, it is located at
Reflector on described substrate, be arranged on described substrate and be located at the led luminescence chip at reflector center it is characterised in that:
Described led encapsulation also includes the mist photosphere positioned at led chip light-emitting face side, and described mist photosphere includes resin glue and is scattered in
Some translucent microballoon in described resin glue, described microballoon is arranged in the way of individual layer, tiling.
Further, described led chip is coated with the resin bed not containing fluorescent material, and is located at described resin bed
On the encapsulation glue-line doped with fluorescent material, described mist photosphere be located at described doped with the encapsulation glue-line of fluorescent material on.
Present invention also offers a kind of led encapsulating structure, including carborundum heat-radiating substrate, reflective on described substrate
Cup, is arranged on described substrate and is located at the led luminescence chip at reflector center, positioned at the mist light of led chip light-emitting face side
Layer, described mist photosphere include resin glue and be scattered in some translucent microballoon in described resin glue it is characterised in that: described
The close exiting surface side of translucent microballoon is removed a part to form hemispherical concave surface, thus form one on microballoon irising out
Light bright spot, between 60-70%, described microballoon entirety particle diameter is between 1.5-2.5 millimeter for the light transmittance of described microballoon.
Further, described led chip is coated with the resin bed not containing fluorescent material, and is located at described resin bed
On the encapsulation glue-line doped with fluorescent material, described mist photosphere be located at described doped with the encapsulation glue-line of fluorescent material on.
Further, the minimum point of hemispherical concave surface of described microballoon is overlapped with the centre of sphere of described a diameter of described microballoon.
Further, above-mentioned led luminescence chip can be blue chip, red light chips or green glow chip.
Brief description
Fig. 1 is the structure chart of the led encapsulating structure of one embodiment of the invention；
Fig. 2 is the translucent micro-sphere structure and its transmitted light light distribution used by one embodiment of the invention.
Specific embodiment
Refer to the attached drawing 1-2, is the led encapsulating structure schematic diagram of the present invention.
Fig. 1 is the sectional view of the led encapsulating structure of one embodiment of the invention, and substrate 2 is with high heat conduction and thermal diffusivity
The silicon carbide substrate of energy, the heat that led chip produces mainly is passed to by this substrate and distributes.Encapsulation led core is formed with substrate 2
The indispensable line layer of piece, the chip connecting structure that the design of this line layer can encapsulate as needed and determine, due to this circuit
The design of layer is all well known to those skilled in the art, so in this description will be omitted.Integration is arranged on carborundum heat-radiating substrate 2
Reflector 3, the inner surface of reflector 3 is inclined-plane.On carborundum heat-radiating substrate 2, in reflector, it is pasted with led chip 1, should
The type of led chip can be determined by use environment, such as, in Sea World, can select blue luminescence chip to set off ocean by contrast
Atmosphere.
Directly encapsulate doped with unlike the packaging plastic of fluorescent material 6 above led chip from prior art, in led core
Cover, above piece, the insulating resin layer 10 not containing fluorescent material 6, and the envelope doped with fluorescent material 6 is covered on insulating resin layer 10
Dress glue 4, does not contain the insulating resin layer 10 of fluorescent material 6 and the packaging plastic 4 doped with fluorescent material 6 can be selected for identical colloid material
Material.Due to having selected the silicon carbide substrate 2 of high heat conduction, high radiating, the heat of chip mainly scatters and disappears from substrate side, so covering
The insulating resin layer 10 of led chip can using the not high ordinary resin material of heat conduction, insulating resin layer 10 separated led chip with
Encapsulation glue-line 4 doped with fluorescent material 6 is so that when led chip operation, the packaging plastic 4 doped with fluorescent material 6 will not mistake
Heat, does not thus interfere with the fluorescent characteristic of fluorescent material 6.
Packaging plastic 4 doped with fluorescent material 6 forms mist photosphere 9, this mist photosphere 9 is to be scattered in by translucent microballoon 7
Formed in resin glue 8, this translucent microballoon 7 is arranged in the way of individual layer, tiling, can leave thin between each translucent microballoon 7
Little interval.
This translucent microballoon 7 has been removed a part to form hemispherical concave surface near the side of exiting surface, due to from led
The light that chip projects is partly in translucent microballoon 7, and the edge due to the hemispherical concave surface in translucent microballoon has
Little radius of curvature, forms a circle nose, therefore light can be concentrated and project from the edge of hemispherical concave surface, material is thus formed one
Circle is compared with brighter aperture for surrounding.Some translucent microballoons 7 form gorgeous and not dazzling aperture combination so that
Lighting environment is more romantic, and meanwhile, hemispherical concave surface makes the luminous intensity within aperture with Central Symmetry graded profiles, and this enters one
Step increased the soft degree of aperture, meets the comfort of human eye.Described translucent microballoon 7 is by the material system with single material
Become, between 60-70%, the measurement standard of light transmittance is luminous intensity and incidence that the material of 1.1 mm of thickness passes through to its light transmittance
Luminous intensity ratio.It should be noted that the diameter of translucent microballoon 7 should be sufficiently large, if the too little example of the diameter of translucent microballoon 7
As in Nano grade, micron level, hundred micron levels, because the too little wavelength with light of particle diameter is close, arisen that light bypasses
Phenomenon so that light penetration is too high, dim effect would not there is, in turn the too big example of the diameter of translucent microballoon 7
As exceeded a centimetre rank, then light will be too dim, and therefore through design, the diameter of Optical Microsphere 7 is in the model of 1.5-2.5 millimeter
Enclose interior effect preferably, preferably 2 millimeters.
Next the parameter of hemispherical concave surface in once translucent microballoon 7 will be discussed.Obvious, this hemispherical concave surface surrounds
Hemispheric diameter can not possibly be more than translucent microballoon 7 diameter r, but if too small is also not in obvious aperture
Effect, therefore, optimized situation is the centre of sphere weight with translucent microballoon 7 for the minimum point of hemispherical concave surface of translucent microballoon 7
Close, be so designed to obtain the light distribution of the aperture of optimum.The upper surface of mist photosphere 9 is neat with the upper surface of reflector 3
Flat, and planar lens 5, compared with general convex lens, planar lens 5 are set in the upper surface of mist photosphere 9 and reflector 3
Do not possess the feature of light beam concentration, this is conducive to the effect of the present invention.
Claims (4)
1. a kind of led encapsulating structure, including carborundum heat-radiating substrate, the reflector on described substrate, is arranged at described base
On plate and be located at reflector center led luminescence chip, positioned at the mist photosphere of led chip light-emitting face side, described mist photosphere bag
Include resin glue and some translucent microballoon that is scattered in described resin glue it is characterised in that: the leaning on of described translucent microballoon
Nearly exiting surface side is removed a part to form hemispherical concave surface, thus forming one on microballoon to iris out light bright spot, described micro-
, between 60-70%, described microballoon entirety particle diameter is between 1.5-2.5 millimeter for the light transmittance of ball.
2. led encapsulating structure as claimed in claim 1, described led chip is coated with the resin bed not containing fluorescent material,
And the encapsulation glue-line doped with fluorescent material being located on described resin bed, described mist photosphere is positioned at described doped with phosphor
On the encapsulation glue-line of material.
3. the led encapsulating structure as described in any one of claim 1-2, the minimum point of hemispherical concave surface of described microballoon with described
The centre of sphere of microballoon overlaps.
4. the led encapsulating structure as described in any one of claim 1-2, described led luminescence chip is blue chip, red light chips
Or green glow chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410640012.0A CN104465964B (en) | 2014-11-14 | 2014-11-14 | LED packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410640012.0A CN104465964B (en) | 2014-11-14 | 2014-11-14 | LED packaging structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104465964A CN104465964A (en) | 2015-03-25 |
| CN104465964B true CN104465964B (en) | 2017-01-25 |
Family
ID=52911684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410640012.0A Active CN104465964B (en) | 2014-11-14 | 2014-11-14 | LED packaging structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104465964B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105789406B (en) * | 2014-12-26 | 2018-06-01 | 安徽康力节能电器科技有限公司 | A kind of LED encapsulation structure |
| CN104681698B (en) * | 2015-01-06 | 2017-12-19 | 安徽康力节能电器科技有限公司 | A kind of decoration LED encapsulation structure |
| CN107946443A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of high-power LED encapsulation structure |
| CN107946447A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of encapsulating structure of LED |
| CN107946437A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of encapsulating structure of LED |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621101A (en) * | 2008-06-30 | 2010-01-06 | 展晶科技(深圳)有限公司 | LED and production method thereof |
| CN101814572A (en) * | 2010-03-05 | 2010-08-25 | 矽畿科技股份有限公司 | Optical diode packaging structure |
| CN102456813A (en) * | 2010-10-29 | 2012-05-16 | 展晶科技(深圳)有限公司 | LED (light emitting diode) and manufacturing method thereof |
| CN103474423A (en) * | 2013-03-28 | 2013-12-25 | 深圳信息职业技术学院 | High luminous efficiency LED integrated light source and LED lamp |
| CN203398160U (en) * | 2013-08-02 | 2014-01-15 | 奉化市金源电子有限公司 | LED light source packaging structure |
| CN104103740A (en) * | 2013-04-08 | 2014-10-15 | 逢甲大学 | Light emitting device |
| CN204391153U (en) * | 2014-11-14 | 2015-06-10 | 司红康 | A kind of LED encapsulation structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010021497A (en) * | 2008-07-14 | 2010-01-28 | Sanyo Electric Co Ltd | Semiconductor light-emitting device |
-
2014
- 2014-11-14 CN CN201410640012.0A patent/CN104465964B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101621101A (en) * | 2008-06-30 | 2010-01-06 | 展晶科技(深圳)有限公司 | LED and production method thereof |
| CN101814572A (en) * | 2010-03-05 | 2010-08-25 | 矽畿科技股份有限公司 | Optical diode packaging structure |
| CN102456813A (en) * | 2010-10-29 | 2012-05-16 | 展晶科技(深圳)有限公司 | LED (light emitting diode) and manufacturing method thereof |
| CN103474423A (en) * | 2013-03-28 | 2013-12-25 | 深圳信息职业技术学院 | High luminous efficiency LED integrated light source and LED lamp |
| CN104103740A (en) * | 2013-04-08 | 2014-10-15 | 逢甲大学 | Light emitting device |
| CN203398160U (en) * | 2013-08-02 | 2014-01-15 | 奉化市金源电子有限公司 | LED light source packaging structure |
| CN204391153U (en) * | 2014-11-14 | 2015-06-10 | 司红康 | A kind of LED encapsulation structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104465964A (en) | 2015-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| CB03 | Change of inventor or designer information |
Inventor after: Ke Ying Inventor after: Li Zhonghu Inventor before: Si Hongkang |
|
| COR | Change of bibliographic data | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20161116 Address after: B building 237000 Anhui province Lu'an Kechuang center room 509 (the intersection of three road and Gaocheng Road) Applicant after: Anhui Kang Force Energy Saving Electric Appliance Technology Co., Ltd Address before: 237000 Anhui Province, Lu'an city science and technology innovation center room 001 (the intersection of three road and Gaocheng Road) Applicant before: Si Hongkang |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191120 Address after: No.2, Xuhe Road, diaopu street, Gaogang District, Taizhou City, Jiangsu Province Patentee after: Li Qiannan Address before: B building 237000 Anhui province Lu'an Kechuang center room 509 (the intersection of three road and Gaocheng Road) Patentee before: Anhui Kang Force Energy Saving Electric Appliance Technology Co., Ltd |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20200106 Address after: Room 314, building 2, No.28, Zhenxing Road, science and Technology Park, Changping District, Beijing 102200 Patentee after: Beijing Zhixin Pengcheng Semiconductor Technology Co., Ltd. Address before: No.2, Xuhe Road, diaopu street, Gaogang District, Taizhou City, Jiangsu Province Patentee before: Li Qiannan |
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| TR01 | Transfer of patent right |