CN104681698A - LED (Light Emitting Diode) encapsulation structure for decoration - Google Patents
LED (Light Emitting Diode) encapsulation structure for decoration Download PDFInfo
- Publication number
- CN104681698A CN104681698A CN201510004145.3A CN201510004145A CN104681698A CN 104681698 A CN104681698 A CN 104681698A CN 201510004145 A CN201510004145 A CN 201510004145A CN 104681698 A CN104681698 A CN 104681698A
- Authority
- CN
- China
- Prior art keywords
- led
- chip
- encapsulation structure
- fluorescent material
- photosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005538 encapsulation Methods 0.000 title claims abstract description 37
- 238000005034 decoration Methods 0.000 title claims abstract description 8
- 239000011347 resin Substances 0.000 claims abstract description 27
- 229920005989 resin Polymers 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000004005 microsphere Substances 0.000 claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 9
- 239000000463 material Substances 0.000 claims description 30
- 239000003595 mist Substances 0.000 claims description 18
- 238000004020 luminiscence type Methods 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 9
- 238000002834 transmittance Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000010410 layer Substances 0.000 abstract 4
- 239000000853 adhesive Substances 0.000 abstract 2
- 230000001070 adhesive effect Effects 0.000 abstract 2
- 239000012790 adhesive layer Substances 0.000 abstract 2
- 239000011258 core-shell material Substances 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000008451 emotion Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000036651 mood Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Abstract
The invention provides an LED (Light Emitting Diode) encapsulation structure for decoration. The LED encapsulation structure comprises a silicon carbide heat dissipation substrate, an LED luminous chip arranged on the substrate, a fluorescent-material-free resin layer covering the LED chip, a fluorescent-material-doped encapsulation adhesive layer arranged on the resin layer and a fog light layer arranged on the fluorescent-material-doped encapsulation adhesive layer, wherein the fog light layer comprises a resin adhesive and a plurality of optical microspheres of core-shell structures dispersed in the resin adhesive; each optical microsphere comprises a transparent core and a semi-transparent shell around the core; the optical microspheres are neatly and flatly arranged. Through the LED encapsulation structure, the light becomes soft; meanwhile, the influence of heat of the LED chip on the property of the fluorescent powder is eliminated.
Description
Technical field
The present invention relates to a kind of LED encapsulation structure, particularly a kind of LED encapsulation structure applying to decorate.
Background technology
LED is called as forth generation light source, the significant progress that LED illumination technology has obtained, the raising of epitaxy technology makes the cost of LED chip greatly reduce, LED has and holds the superior quality come, such as luminous efficiency is high, bright, be the green light source of a new generation, LED has a extensive future illumination application.LED light source, there are energy-conserving and environment-protective (electric light transformation efficiency is close to 60%), safety, life-span long (can reach 100,000 hours), low-power consumption, low-heat, high brightness, light beam concentrated, etc. feature, be applied in the fields such as various instruction, display, decoration, backlight, general lighting.
Fig. 1 is the LED encapsulation structure of prior art, substrate 2 is arranged a reflector 3, the encapsulating face of substrate 2 pastes luminescence chip 1, reflector 3 is arranged around luminescence chip 1, encapsulation glue-line 4 doped with fluorescent material 6 encapsulates cover luminescence chip 1 completely, at reflector 3 and doped with above the encapsulation glue-line 4 of fluorescent material 6, lens 5 are set, luminescence chip 1 can select the chip of various glow color, such as blue light, ruddiness, green luminescence chip, in this, to have luminous efficiency high for encapsulating structure, the feature of high brightness.But, in the occasion that some is special, such as bedroom, aquariums etc. are less demanding to illumination, but the occasion very high to illumination atmosphere requirements, LED light device also needs further improvement, and such as bedroom does not need the light that becomes clear in bed, and if the soft illumination condition of a kind of warmth can be built in bedroom, then can both play facilitation to the rest of people, mood, emotion inter virum et uxorem.Such as build a kind of dim blue atmosphere in aquarium again, then visitor can be made joyfully more on the spot in person and body and mind to appreciate the secret of ocean.On the other hand, LED encapsulation structure as shown in Figure 1, the encapsulation glue-line 4 due to fluorescent material 6 encapsulates the top with 1 of LED chip, and the heat that LED produces can produce harmful effect to the characteristic of fluorescent material 6 in encapsulation glue-line 4, have impact on the characteristic of fluorescent material 6.
Summary of the invention
In order to solve the problem, the invention provides a kind of decoration LED encapsulation structure, comprise carborundum heat-radiating substrate, be positioned at the reflector on described substrate, to be arranged on described substrate and to be positioned at the LED luminescence chip at reflector center, it is characterized in that: described LED encapsulation structure also comprises the mist photosphere being positioned at side, LED chip light extraction face, described mist photosphere comprises resin glue and is scattered in the some Optical Microspheres in described resin glue.This LED chip is coated with the resin bed not containing fluorescent material, and is positioned at the encapsulation glue-line doped with fluorescent material on described resin bed, described mist photosphere is positioned at described doped with on the encapsulation glue-line of fluorescent material.
The present invention also provides a kind of decoration LED encapsulation structure, comprise carborundum heat-radiating substrate, be positioned at the reflector on described substrate, to be arranged on described substrate and to be positioned at the LED luminescence chip at reflector center, be positioned at the mist photosphere of side, LED chip light extraction face, described mist photosphere comprises resin glue and is scattered in the some Optical Microspheres in described resin glue, described microballoon is nucleocapsid structure, comprise the glass core of light transmittance more than 90% and the shell of light transmittance between 60-70%, the overall particle diameter of described microballoon is between 1.5-2.5 millimeter, the thickness of described shell is between 150-250 micron.This LED chip is coated with the resin bed not containing fluorescent material, and is positioned at the encapsulation glue-line doped with fluorescent material on described resin bed, described mist photosphere is positioned at described doped with on the encapsulation glue-line of fluorescent material.
Above-mentioned LED luminescence chip can select blue chip, red light chips or green glow chip.
Accompanying drawing explanation
Fig. 1 is the LED encapsulation structure of prior art in.
Fig. 2 is the structure chart of the LED encapsulation structure of one embodiment of the invention.
Fig. 3 is the structure chart of the Optical Microsphere of one embodiment of the invention.
Embodiment
For making the present invention high-visible, easy understand, will introduce the present invention with embodiment by reference to the accompanying drawings in detail.
Fig. 2 is the sectional view of the LED encapsulation structure of one embodiment of the invention, and substrate 2 is the silicon carbide substrates with high heat conduction and heat dispersion, and the main substrate thus of the heat that LED chip produces passes to and distributes.Substrate 2 is formed with the line layer of packaging LED chips indispensability, the chip connecting structure that the design of this line layer can encapsulate as required and determining, because the design of this line layer is all well known to those skilled in the art, so in this description will be omitted.Carborundum heat-radiating substrate 2 is arranged the reflector 3 of integration, the inner surface of reflector 3 is inclined-plane.On carborundum heat-radiating substrate 2, be pasted with LED chip 1 in reflector, the type of this LED chip can be determined by environment for use, such as, in Sea World, blue-light-emitting chip can be selected to set off marine atmosphere by contrast.
With prior art directly encapsulate above LED chip doped with fluorescent material 6 packaging plastic unlike, the insulating resin layer 10 not containing fluorescent material 6 is covered above LED chip, and the packaging plastic 4 covered on insulating resin layer 10 doped with fluorescent material 6, the insulating resin layer 10 not containing fluorescent material 6 can select identical colloidal materials with the packaging plastic 4 doped with fluorescent material 6.Owing to having selected the silicon carbide substrate 2 of high heat conduction, high heat radiation, the heat of chip has has mainly scattered and disappeared from substrate side, so the ordinary resin material that the insulating resin layer 10 covering LED chip can adopt heat conduction not high.Insulating resin layer 10 has separated LED chip and the encapsulation glue-line 4 doped with fluorescent material 6, and make when LED chip work, the packaging plastic 4 doped with fluorescent material 6 can not be overheated, would not affect the fluorescent characteristic of fluorescent material 6 like this.
Forming mist photosphere 9 doped with on the packaging plastic 4 of fluorescent material 6, this mist photosphere 9 is scattered in resin glue 8 by the Optical Microsphere 7 with nucleocapsid structure to be formed, and the Optical Microsphere 7 of this nucleocapsid structure arranges in mode that is neat, tiling.Tiny interval can be left between the Optical Microsphere 7 of each nucleocapsid structure.
The Optical Microsphere 7 of this nucleocapsid structure comprises and has high transmission rate, the spherical nuclei 71 of the high grade of transparency and contact and surround the low-transmittance of these spherical nuclei 71, the shell 72 of low transparency and form.These spherical nuclei 71 and shell 72 can be glass materials, the light transmittance of spherical nuclei more than 90%, the measurement standard of light transmittance be 1.1 mm of thickness material through the ratio of luminous intensity and the luminous intensity of incidence.The light transmittance of shell 72 is between 60-70%.When the light of LED reflection is by this mist photosphere 9, on the one hand, through from the atomizing on Optical Microsphere 7 surface with nucleocapsid structure of main light emission, misty aura feature can not be there will be on Optical Microsphere 7 surface with nucleocapsid structure; On the other hand, the ball entering the high grade of transparency of microballoon 7 inside can form the effect being similar to light buffering, and a part of light can be oozed out through translucent shell 72 by inner core 71, this makes the better effects if be atomized, and light is softer, warm, light can not be too bright, dazzling.Should note, the diameter of Optical Microsphere 7 should be enough large, if the diameter of Optical Microsphere 7 is too little such as at Nano grade, micron level, hundred micron levels, too little close with the wavelength of light due to particle diameter, just there will be the phenomenon that light is walked around, make light penetration too high, dim effect would not be there is, the diameter of microballoon 7 such as exceedes a centimetre rank too greatly conversely, then light will be too dim, therefore through design, diameter effect in the scope of 1.5-2.5 millimeter of Optical Microsphere 7 is best, be preferably 2 millimeters, the mist photosphere 9 of foregoing description and CN103811634, CN202817033U, CN102593280A, CN101814562, CN101979914A, the disclosed micro-sphere structure of nanometer or the micro-meter scale raising light emission rate or light-emitting uniformity or raising optics diffusion function of adopting of the Chinese publication such as CN101858570A is essentially different at every aspect.
Parameter between spherical nuclei 71 and shell 72 in the Optical Microsphere 7 of this nucleocapsid structure is described again, if the particle diameter R of spherical nuclei 71 is too large, and the thickness d of shell 72 is too small, then atomizing is cut down, if the particle diameter R of spherical nuclei 71 is too little, and the thickness d of shell 72 is excessive, then the light cushioning effect of ball 71 is not obvious, as the selection of compromise, the overall particle diameter of this Optical Microsphere 7 (R+2d) is set between 1.5-2.5 millimeter, the thickness d of shell 72 is between 150-250 micron, and namely the thickness difference of shell 72 is seldom 1/10th of the overall particle diameter of microballoon 7.
The upper surface of mist photosphere 9 and the upper surface flush of reflector 3, and planar lens 5 is set at the upper surface of mist photosphere 9 and reflector 3, compared with general convex lens, planar lens 5 does not possess the feature that light beam is concentrated, and this is conducive to effect of the present invention.
The above-mentioned embodiment described in detail, those skilled in the art should understand advantage part of the present invention; But above-described embodiment is only the concrete form realizing the present invention's design, can not limit the present invention, the execution mode of the obvious distortion consistent with the present invention's spirit also should belong to design of the present invention.
Claims (6)
1. a decoration LED encapsulation structure, comprise carborundum heat-radiating substrate, be positioned at the reflector on described substrate, to be arranged on described substrate and to be positioned at the LED luminescence chip at reflector center, it is characterized in that: described LED encapsulation structure also comprises the mist photosphere being positioned at side, LED chip light extraction face, described mist photosphere comprises resin glue and is scattered in the some Optical Microspheres in described resin glue.
2. LED encapsulation structure as claimed in claim 1, described LED chip is coated with the resin bed not containing fluorescent material, and the encapsulation glue-line doped with fluorescent material be positioned on described resin bed, described mist photosphere is positioned at described doped with on the encapsulation glue-line of fluorescent material.
3. the LED encapsulation structure as described in claim 1-2, described LED luminescence chip can be blue chip, red light chips or green glow chip.
4. a decoration LED encapsulation structure, comprise carborundum heat-radiating substrate, be positioned at the reflector on described substrate, to be arranged on described substrate and to be positioned at the LED luminescence chip at reflector center, be positioned at the mist photosphere of side, LED chip light extraction face, described mist photosphere comprises resin glue and is scattered in the some Optical Microspheres in described resin glue, described microballoon is nucleocapsid structure, comprise the glass core of light transmittance more than 90% and the shell of light transmittance between 60-70%, the overall particle diameter of described microballoon is between 1.5-2.5 millimeter, and the thickness of described shell is between 150-250 micron.
5. LED encapsulation structure as claimed in claim 4, described LED chip is coated with the resin bed not containing fluorescent material, and the encapsulation glue-line doped with fluorescent material be positioned on described resin bed, described mist photosphere is positioned at described doped with on the encapsulation glue-line of fluorescent material.
6. the LED encapsulation structure as described in claim 4-5, described LED luminescence chip can be blue chip, red light chips or green glow chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510004145.3A CN104681698B (en) | 2015-01-06 | 2015-01-06 | A kind of decoration LED encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510004145.3A CN104681698B (en) | 2015-01-06 | 2015-01-06 | A kind of decoration LED encapsulation structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104681698A true CN104681698A (en) | 2015-06-03 |
| CN104681698B CN104681698B (en) | 2017-12-19 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510004145.3A Active CN104681698B (en) | 2015-01-06 | 2015-01-06 | A kind of decoration LED encapsulation structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN104681698B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107134522A (en) * | 2016-02-26 | 2017-09-05 | 晶元光电股份有限公司 | Light-emitting device |
| CN107946443A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of high-power LED encapsulation structure |
| CN111458738A (en) * | 2020-04-13 | 2020-07-28 | 同济大学 | Scintillator device regulated and controlled by surface micro-lens array structure and preparation thereof |
| US10825970B2 (en) | 2016-02-26 | 2020-11-03 | Epistar Corporation | Light-emitting device with wavelength conversion structure |
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| CN204577464U (en) * | 2015-01-06 | 2015-08-19 | 司红康 | A kind of decoration LED encapsulation structure |
| CN204596838U (en) * | 2014-11-26 | 2015-08-26 | 司红康 | A kind of LED encapsulation structure |
| CN105789406A (en) * | 2014-12-26 | 2016-07-20 | 司红康 | LED packaging structure |
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2015
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| JP2002280614A (en) * | 2001-03-14 | 2002-09-27 | Citizen Electronics Co Ltd | Light emitting diode |
| US20040207311A1 (en) * | 2003-04-18 | 2004-10-21 | Jung-Pin Cheng | White light emitting device |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107134522A (en) * | 2016-02-26 | 2017-09-05 | 晶元光电股份有限公司 | Light-emitting device |
| US10825970B2 (en) | 2016-02-26 | 2020-11-03 | Epistar Corporation | Light-emitting device with wavelength conversion structure |
| CN107946443A (en) * | 2017-11-28 | 2018-04-20 | 西安科锐盛创新科技有限公司 | A kind of high-power LED encapsulation structure |
| CN111458738A (en) * | 2020-04-13 | 2020-07-28 | 同济大学 | Scintillator device regulated and controlled by surface micro-lens array structure and preparation thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104681698B (en) | 2017-12-19 |
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Inventor after: Li Guohong Inventor before: Si Hongkang |
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Effective date of registration: 20171115 Address after: 237000 room 509, B building, science and technology entrepreneurship center, Lu'an economic and Technological Development Zone, Anhui Applicant after: Anhui Kang Force Energy Saving Electric Appliance Technology Co., Ltd Address before: 237000 Anhui Province, Lu'an city science and technology innovation center room 001 (the intersection of three road and Gaocheng Road) Applicant before: Si Hongkang |
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Effective date of registration: 20191224 Address after: No.36 Shengli West Road, Jiangning Economic and Technological Development Zone, Nanjing, Jiangsu Province Patentee after: Nanjing Gehai New Energy Co., Ltd. Address before: Room 509, Building B, Science and Technology Entrepreneurship Service Center, Luan Economic and Technological Development Zone, Anhui Province Patentee before: Anhui Kang Force Energy Saving Electric Appliance Technology Co., Ltd |
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Effective date of registration: 20210105 Address after: 221600 Zhangliang Road North, Peixian Economic Development Zone, Xuzhou City, Jiangsu Province Patentee after: XUZHOU TAIFENG PUMP INDUSTRY Co.,Ltd. Address before: No.36, Shengli West Road, Jiangning Economic and Technological Development Zone, Nanjing, Jiangsu, 210000 Patentee before: NANJING GEHAI NEW ENERGY Co.,Ltd. |