CN104465846A - 一种含量子结构的双面生长四结太阳电池 - Google Patents

一种含量子结构的双面生长四结太阳电池 Download PDF

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CN104465846A
CN104465846A CN201410705349.5A CN201410705349A CN104465846A CN 104465846 A CN104465846 A CN 104465846A CN 201410705349 A CN201410705349 A CN 201410705349A CN 104465846 A CN104465846 A CN 104465846A
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张小宾
陈丙振
杨翠柏
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Zhongshan Dehua Chip Technology Co Ltd
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Abstract

本发明公开了一种含量子结构的双面生长四结太阳电池，包括GaAs衬底，所述GaAs衬底为双面抛光的n型GaAs单晶片，在所述GaAs衬底的上表面设置有GaInP子电池、GaAs子电池和第一GaAs缓冲层，在所述GaAs衬底的下表面设置有第二GaAs缓冲层、第一量子点子电池和第二量子点子电池，所述GaInP子电池和GaAs子电池之间通过第三隧道结连接，所述GaAs子电池与第一GaAs缓冲层之间通过第二隧道结连接，所述第一量子点子电池与第二量子点子电池之间通过第一隧道结连接。本发明可以提高太阳电池对太阳光谱的利用率，从而提高多结太阳电池的光电转换效率。

Description

一种含量子结构的双面生长四结太阳电池
技术领域
本发明涉及太阳能光伏的技术领域，尤其是指一种含量子结构的双面生长四结太阳电池。
背景技术
光伏电池技术从材料类型来区分，主要可以分为三种：一是以晶硅电池为代表的第一代太阳电池，主要包括单晶硅电池和多晶硅电池等，目前技术已经非常成熟，效率接近理论极限，提升空间不大；一是以薄膜电池为代表的第二代太阳电池，成本较低，然后转换效率不高；最后一种是砷化镓多结太阳电池，转换效率较高，还有很大发展空间，可用于聚光光伏发电(CPV)系统和空间电源系统。砷化镓多结电池的主流结构是由GaInP、GaInAs和Ge子电池组成的GaInP/GaInAs/Ge三结太阳电池，电池结构上整体保持晶格匹配，带隙结构为1.85/1.40/0.67eV。然而，对于太阳光光谱，由于GaInAs子电池和Ge子电池之间较大的带隙差距，这种三结电池的带隙组合并不是最佳的，这种结构下Ge底电池的短路电流远远大于中电池和顶电池(V.Sabnis,H.Yuen,and M.Wiemer,AIP Conf.Proc.1477(2012)14)，由于串联结构的电流限制原因，这种结构造成了很大一部分光谱能量不能被充分转换利用，限制了电池性能的提高。
理论分析表明，带隙结构为1.90/1.43/1.04/0.67eV的四结太阳电池理论效率能达到58％，结合实际因素后的效率极限达47％，远高于传统三结42％的极限效率(R.R.King,D.C.Law,K.M.Edmondson et al.,Advances in OptoElectronics，2007(2007)29523)，这主要是因为相比于三结电池，四结电池可以减少热损失，提高电池对太阳光谱的利用率，同时提高开路电压和填充因子。经理论研究与实验证明，InxGa1-xAs/GaAs量子点结构层可以调节材料的吸收带隙，当0.4<x<1.0时，通过调节InxGa1-xAs量子点的周期、尺寸等参数，利用量子点超晶格结构的微带效应可以将InxGa1-xAs/GaAs量子点结构层的光学带隙调节为1.0eV--1.1eV之间；同样，当0.7<x<1.0时，可以将其光学带隙调节为0.6eV—0.8eV之间。因此，基于GaAs双面生长衬底引入量子结构后可形成理想的四结太阳电池结构，能大大提高电池转换效率。
发明内容
本发明的目的在于克服现有技术的不足与缺点，提供一种含量子结构的双面生长四结太阳电池，可以使电池的带隙结构与太阳光谱更加匹配，充分发挥四结电池的优势，提高电池对太阳光谱的利用率，提高多结电池的整体开路电压和填充因子，并最终提高电池的光电转换效率。
为实现上述目的，本发明所提供的技术方案为：一种含量子结构的双面生长四结太阳电池，包括有GaAs衬底，所述GaAs衬底为双面抛光的n型GaAs单晶片；在所述GaAs衬底的上表面按照层状叠加结构从上至下依次设置有GaInP子电池、GaAs子电池和第一GaAs缓冲层；在所述GaAs衬底的下表面按照层状叠加结构从上至下依次设置有第二GaAs缓冲层、第一量子点子电池和第二量子点子电池；所述GaInP子电池和GaAs子电池之间通过第三隧道结连接，所述GaAs子电池与第一GaAs缓冲层之间通过第二隧道结连接，所述第一量子点子电池与第二量子点子电池之间通过第一隧道结连接。
所述第一量子点子电池为p-i-n结构的InGaAs/GaAs量子点太阳电池，从上至下依次包括有n型AlGaAs窗口层、n型GaAs层、非掺杂的InxGa1-xAs/GaAs量子点结构层、p型GaAs层、p型AlGaAs背场层；其中0.4<x<1.0，InxGa1-xAs/GaAs量子点结构层光学带隙为1.0eV—1.1eV。
所述第二量子点子电池为p-i-n结构的InGaAs/GaAs量子点太阳电池，从上至下依次包括有n型AlGaAs窗口层、n型GaAs层、非掺杂的InxGa1-xAs/GaAs量子点结构层、p型GaAs层、p型AlGaAs背场层；其中0.7<x<1.0，InxGa1-xAs/GaAs量子点结构层光学带隙为0.6eV—0.8eV。
本发明与现有技术相比，具有如下优点与有益效果：
利用GaAs双面生长衬底，并结合量子结构材料的自身特点，在GaAs衬底的上表面设置有GaInP、GaAs子电池，在其下表面设置带隙约1.0eV—1.1eV的第一量子点子电池和带隙约0.6eV—0.8eV的第二量子点子电池，最终得到带隙组合结构接近1.9/1.42/1.04/0.7eV的四结太阳电池，达到太阳光谱下四结电池最佳带隙组合，最大程度发挥四结电池的优势，提高电池对太阳光谱的利用率，显著提高电池的光电转换效率。
附图说明
图1为本发明所述含量子结构的双面生长四结太阳电池结构示意图。
具体实施方式
下面结合具体实施例对本发明作进一步说明。
如图1所示，本实施例所述的含量子结构的双面生长四结太阳电池，包括有GaAs衬底，所述GaAs衬底为双面抛光的n型GaAs单晶片；在所述GaAs衬底的上表面按照层状叠加结构从上至下依次设置有GaInP子电池、GaAs子电池和第一GaAs缓冲层；在所述GaAs衬底的下表面按照层状叠加结构从上至下依次设置有第二GaAs缓冲层、第一量子点子电池和第二量子点子电池；所述GaInP子电池和GaAs子电池之间通过第三隧道结连接，所述GaAs子电池与第一GaAs缓冲层之间通过第二隧道结连接，所述第一量子点子电池与第二量子点子电池之间通过第一隧道结连接。
所述第一量子点子电池为p-i-n结构的InGaAs/GaAs量子点太阳电池，从上至下依次包括有n型AlGaAs窗口层、n型GaAs层、非掺杂的InxGa1-xAs/GaAs量子点结构层、p型GaAs层、p型AlGaAs背场层；其中0.4<x<1.0，InxGa1-xAs/GaAs量子点结构层光学带隙为1.0eV—1.1eV。
所述第二量子点子电池为p-i-n结构的InGaAs/GaAs量子点太阳电池，从上至下依次包括有n型AlGaAs窗口层、n型GaAs层、非掺杂的InxGa1-xAs/GaAs量子点结构层、p型GaAs层、p型AlGaAs背场层；其中0.7<x<1.0，InxGa1-xAs/GaAs量子点结构层光学带隙为0.6eV—0.8eV。
下面为本实施例上述含量子结构的双面生长四结太阳电池的具体制备过程，其情况如下：
首先，以4英寸双面抛光的n型GaAs单晶片为衬底，然后采用金属有机化学气相沉积技术(MOCVD)或分子束外延生长技术(MBE)在GaAs衬底的上表面依次生长第一GaAs缓冲层、第二隧道结、GaAs子电池、第三隧道结和GaInP子电池，最后将GaAs衬底翻转180°，再在GaAs衬底的下表面依次生长第二GaAs缓冲层、第一量子点子电池、第一隧道结和第二量子点子电池，即可完成含量子结构的双面生长四结太阳电池的制备。
综上所述，本发明利用GaAs双面生长衬底，并结合量子结构材料的自身特点，在GaAs衬底的上表面设置有GaInP、GaAs子电池，在其下表面设置带隙约1.0eV—1.1eV的第一量子点子电池和带隙约0.6eV—0.8eV的第二量子点子电池，最终得到带隙组合结构接近1.9/1.42/1.04/0.7eV的四结太阳电池，达到太阳光谱下四结电池最佳带隙组合，最大程度发挥四结电池的优势，提高电池对太阳光谱的利用率，显著提高电池的光电转换效率。总之，本发明可以提高太阳电池对太阳光谱的利用率，从而尽可能提高多结太阳电池的光电转换效率，值得推广。
以上所述之实施例子只为本发明之较佳实施例，并非以此限制本发明的实施范围，故凡依本发明之形状、原理所作的变化，均应涵盖在本发明的保护范围内。

Claims (3)

1.一种含量子结构的双面生长四结太阳电池，包括有GaAs衬底，其特征在于：所述GaAs衬底为双面抛光的n型GaAs单晶片；在所述GaAs衬底的上表面按照层状叠加结构从上至下依次设置有GaInP子电池、GaAs子电池和第一GaAs缓冲层；在所述GaAs衬底的下表面按照层状叠加结构从上至下依次设置有第二GaAs缓冲层、第一量子点子电池和第二量子点子电池；所述GaInP子电池和GaAs子电池之间通过第三隧道结连接，所述GaAs子电池与第一GaAs缓冲层之间通过第二隧道结连接，所述第一量子点子电池与第二量子点子电池之间通过第一隧道结连接。
2.根据权利要求1所述的一种含量子结构的双面生长四结太阳电池，其特征在于：所述第一量子点子电池为p-i-n结构的InGaAs/GaAs量子点太阳电池，从上至下依次包括有n型AlGaAs窗口层、n型GaAs层、非掺杂的InxGa1-xAs/GaAs量子点结构层、p型GaAs层、p型AlGaAs背场层；其中0.4<x<1.0，InxGa1-xAs/GaAs量子点结构层光学带隙为1.0eV—1.1eV。
3.根据权利要求1所述的一种含量子结构的双面生长四结太阳电池，其特征在于：所述第二量子点子电池为p-i-n结构的InGaAs/GaAs量子点太阳电池，从上至下依次包括有n型AlGaAs窗口层、n型GaAs层、非掺杂的InxGa1-xAs/GaAs量子点结构层、p型GaAs层、p型AlGaAs背场层；其中0.7<x<1.0，InxGa1-xAs/GaAs量子点结构层光学带隙为0.6eV—0.8eV。
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