CN104465371A - Excimer laser annealing pretreatment method, thin film transistor and production method of thin film transistor - Google Patents
Excimer laser annealing pretreatment method, thin film transistor and production method of thin film transistor Download PDFInfo
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- CN104465371A CN104465371A CN201410856208.3A CN201410856208A CN104465371A CN 104465371 A CN104465371 A CN 104465371A CN 201410856208 A CN201410856208 A CN 201410856208A CN 104465371 A CN104465371 A CN 104465371A
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- 238000005224 laser annealing Methods 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000010409 thin film Substances 0.000 title claims abstract description 9
- 238000002203 pretreatment Methods 0.000 title abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 57
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 38
- 238000000151 deposition Methods 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims abstract description 28
- 238000006356 dehydrogenation reaction Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 18
- 229910004205 SiNX Inorganic materials 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 230000008569 process Effects 0.000 claims description 14
- 238000004140 cleaning Methods 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 12
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- 229910000077 silane Inorganic materials 0.000 description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- 230000009471 action Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000001272 nitrous oxide Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
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Abstract
The invention provides an excimer laser annealing pretreatment method. The excimer laser annealing pretreatment method comprises the steps that i, an SiNx layer, an SiOx layer and an amorphous silicon layer are sequentially deposited on a substrate through a chemical vapor deposition method, and a deposition substrate is formed; ii, then heating and dehydrogenation are carried out on the deposition substrate, and O2 is used for oxidizing part of amorphous silicon on the surface to generate an even oxidation layer of 30-50 thickness while dehydrogenation is performed; iii, when dehydrogenation is finished, inflowing of O2 is stopped, the deposition substrate obtained in the step ii enters a washing machine after cooling, and the deposition substrate is washed with water. The invention further provides a production method of a thin film transistor and the thin film transistor produced through the production method.
Description
Technical field
The present invention relates to the production field of liquid crystal display, be specifically related to a kind of quasi-molecule laser annealing (ELA, Excimer Laser Annealing, quasi-molecule laser annealing) pre-treating method.
Background technology
ELA (quasi-molecule laser annealing) pretreatment process not only can remove granule foreign, reach the object of clean glass, it can also form thin uniform SiOx layer on amorphous silicon, play insulation effect, makes amorphous silicon absorb more energy thus form larger crystal grain, and ELA pretreatment process includes at present:
(1) a-Si → CVD dehydrogenation → HF etches away uneven oxide layer → O that surface is in atmosphere formed
3(forming the uniform thinner oxide layer of one deck on surface) → H
2o, wherein O
3the cost of generator is very high, and HF is more dangerous reagent.After having deposited amorphous silicon film (a-Si), dehydrogenation action is carried out with chemical vapour deposition technique CVD, effect is a large amount of H removed in amorphous silicon in Si-H, prevent from the quick-fried phenomenon of hydrogen occurs in the process of quasi-molecule laser annealing ELA, occur a large amount of defect, these defects can have a strong impact on the electrical of device.Because glass is placed in atmosphere, and slight oxidation can occur, generation SiOx film (because oxygen content is low in air, and room temperature condition, so the oxide layer produced is very uneven, and very thin).Therefore the uneven oxide-film being oxidized formation in atmosphere must etch away with HF by next step.And then O is used again
3water oxidize (O
3the equipment that water uses is O
3generator, this equipment is costly).
(2) a-Si → CVD forms SiOx (this oxide layer is relatively thick) → dehydrogenation → HF (etch away a part of oxide layer, make surface leave more uniform oxide layer) → H
2o.HF concentration needs monitoring, makes HF ensure certain concentration.After having deposited amorphous silicon film (a-Si), the thicker SiOx layer of one deck is first being deposited above with chemical vapour deposition technique, carry out the action of dehydrogenation again, the effect of dehydrogenation is the same, then with HF, SiOx is etched away a part, such benefit is residual SiOx comparatively even (because HF etching is isotropic etching).
Summary of the invention
In order to solve problems of the prior art, the present invention proposes a kind of novel before quasi-molecule laser annealing to the method that polysilicon layer processes, its object is to the cost reducing quasi-molecule laser annealing pre-treatment, improve the uniformity of the oxide layer covered above amorphous silicon, thus obtain the polysilicon compared with large grain size.
In the present invention, quasi-molecule laser annealing pretreatment process adopts during a-Si → dehydrogenation and passes into O
2(forming thin oxide layer through high temperature) → H
2o, can reduce cost so widely, and can increase the uniformity of oxide layer.
1) the invention provides a kind of quasi-molecule laser annealing pre-treating method, comprising:
I) on substrate, deposit SiNx layer, SiOx layer and amorphous silicon (a-Si) layer successively with chemical vapour deposition technique (CVD, Chemical Vapor Deposition), obtain deposition substrate;
Ii) then, heating dehydrogenation is carried out to described deposition substrate, and use O while dehydrogenation
2part surface amorphous silicon oxide is generated uniform
the oxide layer of thickness;
Iii) stop logical O at the end of dehydrogenation simultaneously
2, after cooling, by step I i) and the deposition substrate that obtains enters cleaning machine, cleans described deposition substrate with water.
Wherein, at above-mentioned steps i) the SiNx layer that deposits and SiOx layer be as the resilient coating in deposition substrate.
2) according to the of the present invention 1st) execution mode described in item, wherein said SiNx layer utilizes NH
3and SiH
4gas heating condition under react generate.
3) according to the of the present invention 1st) or the 2nd) execution mode described in item, wherein said SiOx layer utilizes N
2o and SiH
4gas heating condition under react generate.
4) according to the of the present invention 1st) to the 3rd) execution mode according to any one of item, wherein said amorphous silicon (a-Si) layer utilizes N
2and SiH
4gas heating condition under react generate.
5) according to the of the present invention 1st) to the 4th) execution mode according to any one of item, described dehydrogenation carries out at 470-510 DEG C.In an optimum execution mode, described dehydrogenation carries out at 490 DEG C.
6) according to the of the present invention 1st) to the 5th) execution mode according to any one of item, described O
2concentration control more than 99%.
7) according to the of the present invention 1st) to the 6th) execution mode according to any one of item, step I i) time controling at 10-15min.In a preferred execution mode, step I i) time controling at 10-12min.
8) according to the of the present invention 1st) to the 7th) execution mode according to any one of item, to step I ii) clean the amorphous silicon substrate obtained and carry out quasi-molecule laser annealing process.
9) production method for thin-film transistor, comprises the quasi-molecule laser annealing pre-treating method described in above-mentioned any one.
10) a kind of according to the 9th) thin-film transistor that obtains of method manufacture described in item.
In the present invention, the thickness of described oxide layer will according to temperature and O
2concentration and flow control time obtain.In a preferred embodiment of the invention, step I i) processing time preferably to control to and be greater than 10min, if will O be reduced too soon
2flow, otherwise dehydrogenation is incomplete; And the flow of oxygen will first quick and back slow, back segment O
2the object that flow slows down makes only can form very thin oxide layer in the process of cooling, and back segment cooling action can not be had a huge impact the thickness of oxide layer.In the present invention, the thickness of described oxide layer must control
thickness range in, the uniformity of this layer of oxide-film and thickness are very important in the process of ELA, play the effect of insulation, enable amorphous silicon absorb more energy and decrystallize.Otherwise ELA crystallization situation can be undesirable.
In the present invention, after having deposited amorphous silicon layer (a-Si), O has been passed into when chemical vapour deposition technique carries out dehydrogenation
2, allow amorphous silicon use O under the state of heating
2it is made to be oxidized, because be at O
2atmosphere in, therefore uniform oxide-film can be generated, but will the regular hour be controlled, guarantee to produce thinner oxide-film
as long as fallen by particle cleaning with water afterwards, a large amount of costs and time can be saved like this.
Beneficial effect:
Quasi-molecule laser annealing pre-treating method of the present invention is by carrying out dehydrogenation and oxidation processes simultaneously, simple to operate, significantly simplify the pre-treating technology of quasi-molecule laser annealing, reduces the cost of quasi-molecule laser annealing pre-treatment.Method of the present invention also improves the uniformity of the oxide layer covered above amorphous silicon, thus obtains the polysilicon compared with large grain size.Thus in the process of quasi-molecule laser annealing subsequently, play the effect of insulation, enable amorphous silicon absorb more energy and decrystallize.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of quasi-molecule laser annealing pre-treating method of the present invention.
Fig. 2 is the schematic flow sheet of a quasi-molecule laser annealing pre-treating method of the prior art.
Fig. 3 is the schematic flow sheet of another quasi-molecule laser annealing pre-treating method of the prior art.
Embodiment
Term used herein only for the object describing particular, is not intended to limit the present invention.Unless clearly shown other situation in context, singulative as used herein " " and " being somebody's turn to do " also comprise plural form.It should also be understood that, the term used in this manual " comprise " and/or " including " time describe feature described in existence, entirety, step, operation, parts and/or component, but do not hinder other features one or more, entirety, step, operation, parts group, the existence of component and/or component group or interpolation.
Such as " comprise ", " comprising ", " having ", the term of " containing " or " relating to " and variant thereof should understand widely, and comprise listed main body and equivalent, also have unlisted other main body.In addition, when " being comprised " by transitional phrases, " comprising " or " containing " when drawing component, parts group, technique or method step or any other statement, be to be understood that and also contemplate identical component, parts group, technique or method step herein, or there is other statement any of transitional phrases before the record of this component, parts group, technique or method step or other statement any " substantially by ... composition ", " by ... composition " or " being selected from by ... the group of formation ".
If applicable words, the corresponding structure in claim, material, action and the device of all functions or the equivalent of step comprise for coming any structure of n-back test, material or action in combination with the miscellaneous part of specifically stating in claim.Specification of the present invention for introduce and describe object and provide, but be not exhaustive or limit the invention to disclosed form.Under the prerequisite not departing from scope and spirit of the present invention, many changes and variant are apparent for the person of ordinary skill of the art.Here select and describe some embodiments, object carries out best explanation to principle of the present invention and practical application, and make other those of ordinary skill of this area can understand different embodiments of the present invention and there is multiple change, as being suitable for this special-purpose.Correspondingly, although the present invention is described according to embodiment, but those skilled in the art will recognize that, the present invention can change ground to some extent and implement within the spirit and scope of claims.
Now with detailed reference to specific disclosed theme.Although the claim cited by combination describes by disclosed theme, but is appreciated that disclosed theme is not restricted in these claims by they.On the contrary, disclosed theme covers all replacement schemes, change and equivalent, and these can be contained within the scope of disclosed theme defined by the claims.
In an embodiment of the present invention, the ammonia (NH of use
3), silane (SiH
4), nitrous oxide (N
2o), nitrogen (N
2) and oxygen (O
2) all commercially.
The chemical vapor depsotition equipment used in the present invention can make the chemical vapor depsotition equipment commonly used, and preferably uses plasma reinforced chemical vapour deposition (PECVD) equipment.
Embodiment 1
As shown in Figure 1, the method for the present embodiment comprises: before carrying out quasi-molecule laser annealing (ELA) process, be handled as follows:
The first step: in plasma reinforced chemical vapour deposition equipment, with chemical vapour deposition technique (CVD) successively buffer layer (i.e. SiNx
and SiOx
) and amorphous silicon layer a-Si
obtain deposition substrate;
Wherein, SiNx layer utilizes the ammonia (NH passed into
3) and silane (SiH
4) gas heating condition under react generate; SiOx layer utilizes the nitrous oxide (N passed into
2and silane (SiH O)
4) gas heating condition under react generate; A-Si layer utilizes the nitrogen (N passed into
2) and silane (SiH
4) gas heating condition under react generate;
Second step: afterwards in the airtight deposition chamber of same CVD, carries out heating dehydrogenation (490 DEG C) to described deposition substrate, passes into O while dehydrogenation with pipeline to airtight deposition chamber
2(control O
2concentration is more than 99%), after about 10min, part surface amorphous silicon oxide generates uniform
the oxide layer of thickness;
3rd step: enter cleaning machine water and carry out cleaning the particle in described deposition substrate.
Embodiment 2
As shown in Figure 1, the method for the present embodiment comprises: before carrying out quasi-molecule laser annealing (ELA) process, be handled as follows:
The first step: in plasma reinforced chemical vapour deposition equipment, with chemical vapour deposition technique (CVD) successively buffer layer (i.e. SiNx
and SiOx
) and amorphous silicon layer a-Si
obtain deposition substrate;
Wherein, SiNx layer utilizes the ammonia (NH passed into
3) and silane (SiH
4) gas heating condition under react generate; SiOx layer utilizes the nitrous oxide (N passed into
2and silane (SiH O)
4) gas heating condition under react generate; A-Si layer utilizes the nitrogen (N passed into
2) and silane (SiH
4) gas heating condition under react generate.
Second step: afterwards in the airtight deposition chamber of same CVD, carries out heating dehydrogenation (470 DEG C) to described deposition substrate, passes into O while dehydrogenation with pipeline to airtight deposition chamber
2(control O
2concentration is more than 99.5%), after about 12min, part surface amorphous silicon oxide generates uniform
the oxide layer of thickness;
3rd step: enter cleaning machine water and carry out cleaning the particle in described deposition substrate.
Embodiment 3
As shown in Figure 1, the method for the present embodiment comprises: before carrying out quasi-molecule laser annealing (ELA) process, be handled as follows:
The first step: in plasma reinforced chemical vapour deposition equipment, with chemical vapour deposition technique (CVD) successively buffer layer (i.e. SiNx
and SiOx
) and amorphous silicon layer a-Si
obtain deposition substrate;
Wherein, SiNx layer utilizes the ammonia (NH passed into
3) and silane (SiH
4) gas heating condition under react generate; SiOx layer utilizes the nitrous oxide (N passed into
2and silane (SiH O)
4) gas heating condition under react generate; A-Si layer utilizes the nitrogen (N passed into
2) and silane (SiH
4) gas heating condition under react generate.
Second step: afterwards in the airtight deposition chamber of same CVD, carries out heating dehydrogenation (510 DEG C) to described deposition substrate, passes into O while dehydrogenation with pipeline to airtight deposition chamber
2(control O
2concentration is more than 99.5%), after about 15min, part surface amorphous silicon oxide generates uniform
the oxide layer of thickness;
3rd step: enter cleaning machine water and carry out cleaning the particle in described deposition substrate.
As will be appreciated by a person skilled in the art, aforementioned function and/or method may be embodied as system, method or computer program.Such as, function and/or method may be embodied as the executable program command of computer, this instruction is recorded in computer-readable memory device, and when being retrieved by computer processor and performing this instruction, its computer for controlling system is to perform function and/or the method for above-mentioned embodiment.In one embodiment, computer system can comprise one or more CPU, computer storage (such as read-only memory, random access storage device) and data storage device (such as hard disk drive).The executable instruction of computer can use any applicable computer programming language (such as C++, JAVA etc.) to encode.Therefore, the form (comprising firmware, resident software, microcode etc.) of the overall execution mode for software can be taked in aspects more of the present invention, or combines the execution mode of software aspect and hardware aspect.
Can be clear from above-mentioned explanation, invention can be well suited for realize target and reach mentioned advantage and disclosure institute inherent advantages here.Although described preferred embodiment of the present invention for the purpose of this disclosure, but be understandable that, change that is apparent to those skilled in the art and that can complete under spirit of the present invention can be carried out.
Claims (10)
1. a quasi-molecule laser annealing pre-treating method, comprising:
I) with chemical vapour deposition technique deposit successively on substrate SiNx layer, SiOx layer and and amorphous silicon layer, obtain deposition substrate;
Ii) then, heating dehydrogenation is carried out to described deposition substrate, and use O while dehydrogenation
2part surface amorphous silicon oxide is generated uniform
the oxide layer of thickness;
Iii) stop logical O at the end of dehydrogenation simultaneously
2, after cooling, by step I i) and the deposition substrate that obtains enters cleaning machine, cleans described deposition substrate with water.
2. method according to claim 1, is characterized in that, described SiNx layer utilizes NH
3and SiH
4gas heating condition under react generate.
3. method according to claim 1, is characterized in that, described SiOx layer utilizes N
2o and SiH
4gas heating condition under react generate.
4. method according to claim 1, is characterized in that, described amorphous silicon layer utilizes N
2and SiH
4gas heating condition under react generate.
5. the method according to any one of claim 1-4, is characterized in that, described dehydrogenation carries out at 470-510 DEG C.
6. the method according to any one of claim 1-4, is characterized in that, described O
2concentration control more than 99%.
7. the method according to any one of claim 1-4, is characterized in that, step I i) time controling at 10-15min.
8. the method according to any one of claim 1-4, is characterized in that, to step I ii) clean the amorphous silicon substrate that obtains and carry out quasi-molecule laser annealing process.
9. a production method for thin-film transistor, comprises the quasi-molecule laser annealing pre-treating method used according to any one of claim 1-8.
10. the thin-film transistor that obtains of a method manufacture according to claim 9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140180A (en) * | 2015-08-24 | 2015-12-09 | 武汉华星光电技术有限公司 | Manufacturing method of thin-film transistor array substrate and preparation method of polycrystalline silicon material |
| CN112151354A (en) * | 2019-06-26 | 2020-12-29 | 陕西坤同半导体科技有限公司 | Surface treatment method for polycrystalline silicon film |
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- 2014-12-31 CN CN201410856208.3A patent/CN104465371A/en active Pending
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| CN101330004A (en) * | 2007-06-19 | 2008-12-24 | 三星Sdi株式会社 | Method for preparing polysilicon, thin film transistor and preparing method as well as organic led display device |
| CN103489788A (en) * | 2013-09-29 | 2014-01-01 | 京东方科技集团股份有限公司 | Manufacturing method of low-temperature polycrystalline silicon thin film, thin film transistor and display device |
| CN103700695A (en) * | 2013-12-25 | 2014-04-02 | 深圳市华星光电技术有限公司 | Low-temperature polycrystalline silicon film as well as preparation method thereof and transistor |
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| CN105140180A (en) * | 2015-08-24 | 2015-12-09 | 武汉华星光电技术有限公司 | Manufacturing method of thin-film transistor array substrate and preparation method of polycrystalline silicon material |
| CN105140180B (en) * | 2015-08-24 | 2018-03-13 | 武汉华星光电技术有限公司 | The preparation method of thin-film transistor array base-plate and the preparation method of polycrystalline silicon material |
| CN112151354A (en) * | 2019-06-26 | 2020-12-29 | 陕西坤同半导体科技有限公司 | Surface treatment method for polycrystalline silicon film |
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