CN104465371A - Excimer laser annealing pretreatment method, thin film transistor and production method of thin film transistor - Google Patents

Excimer laser annealing pretreatment method, thin film transistor and production method of thin film transistor Download PDF

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CN104465371A
CN104465371A CN 201410856208 CN201410856208A CN104465371A CN 104465371 A CN104465371 A CN 104465371A CN 201410856208 CN201410856208 CN 201410856208 CN 201410856208 A CN201410856208 A CN 201410856208A CN 104465371 A CN104465371 A CN 104465371A
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layer
method
excimer laser
laser annealing
substrate
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CN 201410856208
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唐丽娟
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深圳市华星光电技术有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/268Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

The invention provides an excimer laser annealing pretreatment method. The excimer laser annealing pretreatment method comprises the steps that i, an SiNx layer, an SiOx layer and an amorphous silicon layer are sequentially deposited on a substrate through a chemical vapor deposition method, and a deposition substrate is formed; ii, then heating and dehydrogenation are carried out on the deposition substrate, and O2 is used for oxidizing part of amorphous silicon on the surface to generate an even oxidation layer of 30-50 thickness while dehydrogenation is performed; iii, when dehydrogenation is finished, inflowing of O2 is stopped, the deposition substrate obtained in the step ii enters a washing machine after cooling, and the deposition substrate is washed with water. The invention further provides a production method of a thin film transistor and the thin film transistor produced through the production method.

Description

准分子激光退火前处理方法、薄膜晶体管及其生产方法 Excimer laser annealing before processing method, and a production method of a thin film transistor

技术领域 FIELD

[0001] 本发明设及液晶显示设备的生产领域,具体设及一种准分子激光退火巧LA, Excimer Laser Annealing,准分子激光退火)前处理方法。 [0001] The present invention is provided and the liquid crystal display device production areas, particularly excimer laser annealing is provided, and one clever LA, Excimer Laser Annealing, excimer laser annealing) pretreatment method.

背景技术 Background technique

[0002] ELA (准分子激光退火)前处理过程不仅可W去除颗粒杂质,达到洗净玻璃的目的,它还可W在非晶娃上形成薄的均匀的Si化层,起到保温作用,使非晶娃吸收更多的能量从而形成更大的晶粒,而目前ELA前处理过程包括有: [0002] ELA (excimer laser annealing) W before processing not only removing particulate impurities to achieve the purpose of cleaning the glass, it may be W form a thin uniform layer on the amorphous Si baby, play a role of insulation, amorphous baby absorbs more energy to form a larger crystal grains, and the current front ELA process comprising:

[000引(1) a-Si - CVD去氨一HF蚀刻掉在空气中表面形成的不均匀氧化层一03 (在表面形成一层均匀的较薄的氧化层)一&0,其中化发生器的成本是很高的,且HF是比较危险的试剂。 [000 Primer (1) a-Si - CVD desmopressin a HF etch away the oxide layer uneven surface 03 a in air (formation of a uniform thin oxide layer on the surface) a & 0, wherein the generator of the cost is very high, and HF is more dangerous reagents. 沉积完非晶娃膜之后(a-Si),要用化学气相沉积法CVD进行去氨动作,作用是去掉非晶娃中Si-H中的大量的H,防止在准分子激光退火ELA的过程中发生氨爆的现象,出现大量缺陷,该些缺陷会严重影响器件的电性。 After completion of depositing an amorphous film baby (a-Si), use a chemical vapor deposition CVD deammoniation operation, it is to remove a large amount of amorphous baby H of Si-H, an excimer laser annealing process to prevent the ELA phenomenon ammonia explosion occurred, a large number of defects, these defects can seriously affect the electrical properties of the device. 因为玻璃在空气中放置会发生轻微的氧化,产生Si化膜(因为空气中氧含量低,且室温条件,所W产生的氧化层很不均匀,而且很薄)。 Because minor oxide glass was placed in the air will occur, resulting Si film (due to the low oxygen content in air, and at room temperature, the generated oxide layer is very uneven W, and thin). 故下一步必须用HF将在空气中氧化形成的不均匀的氧化膜蚀刻掉。 Non-uniform etching the oxide film must be formed so that the next step with HF in air oxidized away. 紧接着再用化水氧化(03 水所使用的设备是03发生器,此设备较昂贵)。 Then followed by oxidation of water (water used in the device 03 are the generator 03, the device more expensive).

[0004] (2)a-Si - CVD形成SiOx (该氧化层相对较厚)一去氨一HF (蚀刻掉一部分氧化层,使表面留下较均匀的氧化层)一&0。 [0004] (2) a-Si - CVD forming the SiOx (relatively thick oxide layer) a deammoniation a HF (part of the oxide layer is etched away, leaving the surface more uniform oxide layer) a & 0. HF浓度需要监控,使HF保证一定的浓度。 HF concentration needs to be monitored, the HF guarantee a certain concentration. 在沉积完非晶娃膜之后(a-Si),用化学气相沉积法在上面先沉积一层较厚的SiOx层,再进行去氨的动作,去氨的作用同上,然后用HF将SWx蚀刻掉一部分,该样的好处是残留的Si化较均匀(因为HF蚀刻是等向性蚀刻)。 After completion of depositing an amorphous film baby (a-Si), deposition by chemical vapor deposition on top of the first layer of thick SiOx layer, then to the action of ammonia, to the action of ammonia as above, and then etched with HF SWx off a portion, of the kind of benefits it is of relatively uniform residual Si (HF because the etching is anisotropic etching).

发明内容 SUMMARY

[0005] 为了解决现有技术中存在的问题,本发明提出了一种新型的在准分子激光退火前对多晶娃层进行处理的方法,其目的在于减少准分子激光退火前处理的成本,提高覆盖在非晶娃上面的氧化层的均匀性,从而得到较大晶粒的多晶娃。 [0005] In order to solve the problems in the prior art, the present invention provides a novel method for processing polycrystalline layer baby before excimer laser annealing, which aims to reduce the cost of excimer laser annealing before processing, improve the uniformity of the oxide layer covering the amorphous baby above, to obtain larger grains of the polycrystalline baby.

[0006] 本发明中准分子激光退火前处理过程采用a-Si -去氨时通入〇2(经高温形成薄的氧化层)一&0,该样可W大大地减少成本,且可W增加氧化层的均匀性。 [0006] In the present invention, before the excimer laser annealing process using a-Si - time to go into ammonia 〇2 (thin oxide layer formed at high temperature) a & 0, the sample W can be greatly reduced cost, and may increase W uniformity of the oxide layer.

[0007] 1)本发明提供了一种准分子激光退火前处理方法,包括: [0007] 1) The present invention provides a pretreatment method for an excimer laser annealing, comprising:

[000引i)用化学气相沉积法(CVD,化emical Vapor D巧osition)在基板上依次沉积Si化层、Si化层和非晶娃(a-Si)层,得到沉积基板; [000 primers i) chemical vapor deposition method (the CVD, Qiao of emical Vapor D osition) Si layer are sequentially deposited on the substrate, an amorphous Si layer and a baby (a-Si) layer, a deposition substrate;

[0009] ii)然后,对所述沉积基板进行加热去氨,并在去氨的同时使用化将部分表面非晶娃氧化生成均匀的30-50A厚度的氧化层; [0009] ii) Next, the substrate is heated to the deposition of ammonia, ammonia and at the same time to use a portion of the surface of the amorphous oxidation baby 30-50A uniform oxide layer thickness;

[0010] iii)去氨结束时同时停止通〇2,待冷却后,将步骤ii)得到的沉积基板进入清洗机,用水清洗所述沉积基板。 [0010] iii) simultaneously stopped to end a 〇2 ammonia, after cooling the deposition substrate, the step ii) obtained into the washing machine, the washing water deposition substrate.

[0011] 其中,在上述步骤i)沉积的Si化层和Si化层是作为沉积基板上的缓冲层。 [0011] wherein, in step i) depositing a Si layer and the Si layer is deposited as a buffer layer on the substrate.

[001引2)根据本发明的第1)项所述的实施方式,其中所述Si化层是利用N&和SiH4气体在加热的条件下发生反应生成的。 [001 Primer 2) According to the embodiment item 1) according to the present invention, wherein the Si layer is the use of N & SiH4 gas and the reaction occurs under heating.

[0013] 3)根据本发明的第1)或第2)项所述的实施方式,其中所述Si化层是利用馬0和Si&气体在加热的条件下发生反应生成的。 [0013] 3) According to the embodiment or item 1) 2) of the present invention, wherein the Si layer is the use of a horse and the reaction Si 0 & occurs under heating gas generated.

[0014] 4)根据本发明的第1)至第3)项中任一项所述的实施方式,其中所述非晶娃(a-Si)层是利用馬和SiH4气体在加热的条件下发生反应生成的。 [0014] 4) According to a first embodiment of the present invention) to 3) according to any one of the items, wherein the baby amorphous (a-Si) layer is formed using SiH4 gas at the horse and under heating reaction produced.

[0015] 5)根据本发明的第1)至第4)项中任一项所述的实施方式,所述去氨是在470-510°C下进行。 [0015] 5) according to the item 1 of this invention) to fourth) embodiment of any one of the deammoniation is carried out at 470-510 ° C. 在一个最优的实施方式中,所述去氨是在490°C下进行。 The deammoniation is carried out at 490 ° C in an embodiment of an optimum.

[0016] 6)根据本发明的第1)至第5)项中任一项所述的实施方式,所述化的浓度控制在99% 社。 [0016] 6) According to items 1) to 5) according to any one of the embodiments of the present invention, the concentration of 99% in the control community.

[0017] 7)根据本发明的第1)至第6)项中任一项所述的实施方式,步骤U)的时间控制在10-15min。 [0017] 7) According to a first embodiment of the present invention) to 6) according to any one of the items, step U) of time control in 10-15min. 在一个更优选的实施方式中,步骤ii)的时间控制在10-12min。 In a more preferred embodiment, step ii) is controlled in time 10-12min.

[001引8)根据本发明的第1)至第7)项中任一项所述的实施方式,对步骤iii)清洗得到的非晶娃基板进行准分子激光退火处理。 [001 cited 8) According to Embodiment 1) of the present invention is to 7) according to any one of the items, baby cleaning amorphous substrate obtained in step iii) excimer laser annealing process.

[0019] 9) 一种薄膜晶体管的生产方法,包括上述任一项所述的准分子激光退火前处理方法。 Production Method [0019] 9) A thin film transistor comprising pretreatment excimer laser annealing method according to any of the above.

[0020] 10) -种根据第9)项所述的方法制造得到的薄膜晶体管。 [0020] 10) - The kinds 9) The method for manufacturing the thin film transistor is obtained.

[0021] 在本发明中,所述氧化层的厚度要根据温度和化的浓度和流量并控制时间得到。 [0021] In the present invention, the thickness of the oxide layer to be the concentration and the temperature and flow of control, and to give time. 在本发明的优选实施方式中,步骤ii)的处理时间最好要控制到大于lOmin,如果太快的话就要减小〇2流量,否则去氨不完全;而且氧气的流量要先快后慢,后段〇2流量减慢的目的是使在降温的过程中只会形成很薄的氧化层,使后段降温动作不会对氧化层的厚度产生很大的影响。 In a preferred embodiment of the invention, step ii) the treatment time is preferably controlled to be greater than lOmin, will decrease if too fast 〇2 flow, incomplete or desmopressin; and the slow flow rate of oxygen after the first fast , 〇2 flow section slows down after only purpose is to make a very thin oxide layer is formed during cooling in the cooling section after the operation will not have great influence on the thickness of the oxide layer. 在本发明中,所述氧化层的厚度一定要控制在30-50A的厚度范围内,该层氧化膜的均匀度和厚度在ELA的过程中是很重要的,起到保温的作用,使非晶娃能够吸收更多的能量去结晶。 In the present invention, the thickness of the oxide layer thickness must be controlled within the range of 30-50A, uniformity and thickness of the oxide film layer during the ELA is very important, function as insulation, non crystal baby can absorb more energy to crystallization. 否则ELA结晶情况会不理想。 Otherwise, the situation will not ideal ELA crystallization.

[0022] 在本发明中,沉积完非晶娃层之后(a-Si),在化学气相沉积法进行去氨的时候通入化,让非晶娃在加热的状态下用化使其氧化,因为是在〇2的气氛中,故可W生成均匀的氧化膜,但要控制一定的时间,确保产生较薄的氧化膜(30-50A),之后只要用水将颗粒清洗掉即可,该样可W节省大量的成本和时间。 [0022] In the present invention, after completing baby depositing an amorphous layer (a-Si), when de-ammonia chemical vapor deposition into, let the baby in the amorphous state by heating it of oxide, because the atmosphere 〇2, W it can form a uniform oxide film, but to control a certain time, ensure that a thin oxide film (30-50A), then washed with water as long as the particles can be washed, the sample W can save a lot of cost and time.

[0023] 有益效果; [0023] Advantageous Effects;

[0024] 本发明的准分子激光退火前处理方法通过同时进行去氨处理和氧化处理,操作简单,大大地简化了准分子激光退火的前处理工艺,减少准分子激光退火前处理的成本。 [0024] The excimer laser annealing method of the present invention, the pretreatment is performed by simultaneously to ammonia treatment and the oxidation treatment, simple, greatly simplifies pretreatment excimer laser annealing, excimer laser annealing before reducing the cost of treatment. 本发明的方法还提高覆盖在非晶娃上面的氧化层的均匀性,从而得到较大晶粒的多晶娃。 The method of the present invention further improve the uniformity of the oxide layer overlying the amorphous baby above, to obtain larger grains of the polycrystalline baby. 从而在随后的准分子激光退火的处理中,起到保温的作用,使非晶娃能够吸收更多的能量去结曰曰曰〇 Thus, subsequent excimer laser annealing process, acts as insulation, the amorphous baby can absorb more energy to said junction said square said

附图说明 BRIEF DESCRIPTION

[0025] 图1为本发明的准分子激光退火前处理方法的流程示意图。 [0025] Fig 1 a schematic flowchart of excimer laser annealing before processing method of the present invention.

[0026] 图2为现有技术中的一个准分子激光退火前处理方法的流程示意图。 [0026] FIG. 2 is a laser annealing method of pretreatment prior art excimer a schematic flow diagram.

[0027] 图3为现有技术中的另一个准分子激光退火前处理方法的流程示意图。 [0027] FIG. 3 is a schematic flow chart of another method for pretreatment prior art excimer laser annealing.

具体实施方式 detailed description

[002引此处所用之术语仅出于描述特定实施方案的目的,并不意欲限制本发明。 The use of [002 cited herein, the term is for the purpose of describing particular embodiments only, not intended to limit the present invention. 除非上下文中清楚地显示出另外的情况,如此处所用的单数形式"一个"和"该"也包括复数形式。 Unless the context clearly indicates otherwise, the singular forms As used herein, "an" and "the" include plural forms. 还应当理解,在本说明书中使用的用语"包括"和/或"包括有"时说明了存在所述的特征、 整体、步骤、操作、部件和/或构件,但不妨碍一个或多个其他特征、整体、步骤、操作、部件组、构件和/或构件组的存在或添加。 It should also be understood that the terms used in the present specification "comprise" the existence of the features described and / or "comprising", integers, steps, operations, elements, and / or components, but do not interfere with one or more other features, integers, steps, operations, components, members, and / or the presence or addition of the group members.

[0029] 例如"包括"、"包含"、"具有"、"含有"或"设及"的用语及其变体应广泛地理解, 并且包含所列出的主体W及等效物,还有未列出的另外的主体。 [0029] such as "comprising", "including", "having," "containing," or "set and" terms and variations thereof shall be understood broadly, and encompass the subject matter listed thereafter and equivalents W, as well as additional subjects are not listed. 另外,当由过渡性用语"包含"、"包括"或"含有"来引出组分、部件组、工艺或方法步骤或者任何其他的表述时,应当理解此处还考虑了相同的组分、部件组、工艺或方法步骤,或者具有在该组分、部件组、工艺或方法步骤或任何其它表述的记载之前的过渡性用语"基本上由…组成"、"由…组成"或"选自由…构成的组"的任何其它的表述。 Further, when the transitional phrases "comprising", "including" or "containing" to elicit a group of elements, any process or method steps or other representations, it should be understood that the same is also contemplated herein component member group, process or method steps, in a transitional phrase or with or prior to the description of any component, group of components, or method steps further process the expression "consisting essentially of ...", "consisting of ..." or "... selected from the group consisting of or any other expression group "constituted.

[0030] 如果的适用话,权利要求中的相应的结构、材料、动作W及所有功能性的装置或步骤的等效物包括用于与权利要求中所具体陈述的其他部件相结合地来执行功能的任何结构、材料或动作。 [0030] If applicable, the related structure in the claims, equivalent materials, W and operation of all means or step function comprises means for the other as specifically set forth in the claims in combination be performed any structure, material, or act function. 本发明的说明书出于介绍和描述的目的而提供,但并不是穷举性的或将本发明限制到所公开的形式。 For the description of the present invention described and description provided, but not intended to be exhaustive or to limit the invention to the forms disclosed. 在不偏离本发明的范围和精神的前提下,许多改变和变体对于本领域的普通技术人员来说是显而易见的。 Without departing from the scope and spirit of the present invention, many modifications and variations to those of ordinary skill in the art will be apparent. 该里选择并描述了一些实施方案,目的是对本发明的原理和实际应用进行最佳的解释,并且使得本领域的其他普通技术人员能够理解本发明的不同实施方案具有多种变化,如同适合于该特定用途一样。 This was chosen and described in some embodiments, in order to best explain the principles of the present invention and the practical application, and to enable others of ordinary skill in the art to understand the various embodiments of the present invention with various modifications as are suited to as this particular purpose. 相应地,尽管本发明已经依据实施方案进行了描述,然而本领域技术人员将认识到,本发明可W有所改变地并在所附权利要求的精神和范围之内实施。 Accordingly, while the present invention has been described in terms of embodiments, those skilled in the art will recognize that the present invention may be practiced with modifications and W within the spirit and scope of the appended claims.

[0031] 现在将详细参考特定的所公开的主题。 [0031] Reference will now be disclosed specific topics in detail. 尽管所公开的主题将结合所列举的权利要求来描述,然而可W理解,它们并不将所公开的主题限制到该些权利要求中。 While the disclosed subject matter will conjunction with the enumerated claims will be described, however, it is appreciated that W, they are not to limit the disclosed subject matter to those claims. 相反,所公开的主题覆盖了所有的替代方案、改变W及等效物,该些可W包含于由权利要求所限定的所公开的主题的范围之内。 Rather, the disclosed subject matter to cover all alternatives, modifications and equivalents W, the plurality of W may be included within the scope of the disclosed subject matter defined by the claims of.

[0032] 在本发明的实施例中,使用的氨气(畑3)、娃烧(Si&)、一氧化二氮(馬0)、氮气(馬) 和氧气(〇2)均市售可得。 [0032] In an embodiment of the present invention, ammonia (Hata 3) used, baby burn (Si &), nitrous oxide (MA 0), nitrogen (MA) and oxygen (〇2) are commercially available .

[0033] 本发明中使用的化学气相沉积设备可W使常用的化学气相沉积设备,优选使用等离子增强化学气相沉积(PECVD)设备。 [0033] The chemical vapor deposition apparatus in the present invention may be used to make W chemical vapor deposition apparatus, preferably using a plasma enhanced chemical vapor deposition (PECVD) equipment.

[0034] 实施例1 [0034] Example 1

[0035] 如图1所示,本实施例的方法包括;在进行准分子激光退火巧LA)处理前,进行如下处理: [0035] 1, the method of the present embodiment comprises; Qiao excimer laser annealing before LA) process is performed, the following process:

[0036] 第一步;在等离子增强化学气相沉积设备中,用化学气相沉积法(CVD)先后沉积缓冲层(即Si化500 A和Si化1500 A )和非晶娃层a-Si 450 A,得到沉积基板; [0036] The first step; plasma enhanced chemical vapor deposition apparatus, a chemical vapor deposition (CVD) has deposited buffer layer (i.e. of Si and Si of 500 A 1500 A) layer and the amorphous baby a-Si 450 A , a deposition substrate;

[0037] 其中,Si化层是利用通入的氨气(N&)和娃烧(SiH4)气体在加热的条件下发生反应生成的;Si化层是利用通入的一氧化二氮(馬0)和娃烧(Si&)气体在加热的条件下发生反应生成的;a-Si层是利用通入的氮气(N2)和娃烧(Si&)气体在加热的条件下发生反应生成的; [0037] wherein, Si layer using passed ammonia gas (N &) and baby burn (SiH4) gas generating reaction under heated conditions; Si layer is the use into the nitrous oxide (MA 0 ) and baby burning (Si &) of the gas generating reaction under heated conditions; a-Si layer is formed using into nitrogen gas (N2) and baby burning (Si &) reaction gas occurs in the heated;

[003引第二步;之后在同样的CVD密闭沉积腔室内,对所述沉积基板进行加热去氨(490°C ),去氨的同时要用管路向密闭沉积腔室内通入化(控制02浓度为99% W上),约lOmin后,部分表面非晶娃氧化生成均匀的30A厚度的氧化层; [Step 003 primer; closed after deposition chamber in the same CVD, the deposition substrate is heated to ammonia (490 ° C), while the use of ammonia to the conduit into the closed chamber of the deposition chamber (02 Control the concentration of 99% W), after about lOmin, doll portion to form a uniform surface of the amorphous oxide layer 30A in the thickness of the oxide;

[0039] 第=步;进入清洗机台用水进行清洗所述沉积基板上的颗粒。 [0039] = the first step; into the washing machine was washed with water particles on the deposition substrate.

[0040] 实施例2 [0040] Example 2

[0041] 如图1所示,本实施例的方法包括;在进行准分子激光退火巧LA)处理前,进行如下处理: [0041] 1, the method of the present embodiment comprises; Qiao excimer laser annealing before LA) process is performed, the following process:

[0042] 第一步;在等离子增强化学气相沉积设备中,用化学气相沉积法(CVD)先后沉积缓冲层(即Si化500 A和SiOx 1500 A )和非晶娃层a-Si 450 A,得到沉积基板; [0042] The first step; plasma enhanced chemical vapor deposition apparatus, a chemical vapor deposition (CVD) has deposited buffer layer (i.e., Si and 500 A of SiOx 1500 A) layer and the amorphous baby a-Si 450 A, a deposition substrate;

[0043] 其中,Si化层是利用通入的氨气(N&)和娃烧(SiH4)气体在加热的条件下发生反应生成的;Si化层是利用通入的一氧化二氮(馬0)和娃烧(Si&)气体在加热的条件下发生反应生成的;a-Si层是利用通入的氮气(N2)和娃烧(Si&)气体在加热的条件下发生反应生成的。 [0043] wherein, Si layer using passed ammonia gas (N &) and baby burn (SiH4) gas generating reaction under heated conditions; Si layer is the use into the nitrous oxide (MA 0 ) and baby burning (Si &) of the gas generating reaction under heated conditions; a-Si layer is formed using into nitrogen gas (N2) and baby burning (Si &) of the gas generating reaction under heating.

[0044] 第二步;之后在同样的CVD密闭沉积腔室内,对所述沉积基板进行加热去氨(470°C ),去氨的同时要用管路向密闭沉积腔室内通入化(控制化浓度为99. 5% W上),约12min后,部分表面非晶娃氧化生成均匀的40A厚度的氧化层; [0044] The second step; after CVD was sealed in the same deposition chamber, the deposition substrate is heated to ammonia (470 ° C), while the use of ammonia to the sealed conduit introduced into the deposition chamber of (control of the concentration of 99. 5% W), after about 12min, the amorphous portion of the surface Wa oxidation a uniform oxide layer thickness of 40A;

[0045] 第=步;进入清洗机台用水进行清洗所述沉积基板上的颗粒。 [0045] = the first step; into the washing machine was washed with water particles on the deposition substrate.

[0046] 实施例3 [0046] Example 3

[0047] 如图1所示,本实施例的方法包括;在进行准分子激光退火巧LA)处理前,进行如下处理: [0047] 1, the method of the present embodiment comprises; Qiao excimer laser annealing before LA) process is performed, the following process:

[0048] 第一步;在等离子增强化学气相沉积设备中,用化学气相沉积法(CVD)先后沉积缓冲层(即Si化500 A和Si化1500 A )和非晶娃层a-Si 450 A,得到沉积基板; [0048] The first step; plasma enhanced chemical vapor deposition apparatus, a chemical vapor deposition (CVD) has deposited buffer layer (i.e. of Si and Si of 500 A 1500 A) layer and the amorphous baby a-Si 450 A , a deposition substrate;

[0049] 其中,Si化层是利用通入的氨气(N&)和娃烧(SiH4)气体在加热的条件下发生反应生成的;Si化层是利用通入的一氧化二氮(馬0)和娃烧(Si&)气体在加热的条件下发生反应生成的;a-Si层是利用通入的氮气(N2)和娃烧(Si&)气体在加热的条件下发生反应生成的。 [0049] wherein, Si layer using passed ammonia gas (N &) and baby burn (SiH4) gas generating reaction under heated conditions; Si layer is the use into the nitrous oxide (MA 0 ) and baby burning (Si &) of the gas generating reaction under heated conditions; a-Si layer is formed using into nitrogen gas (N2) and baby burning (Si &) of the gas generating reaction under heating.

[0化0] 第二步;之后在同样的CVD密闭沉积腔室内,对所述沉积基板进行加热去氨巧l〇°C ),去氨的同时要用管路向密闭沉积腔室内通入化(控制化浓度为99. 5% W上),约15min后,部分表面非晶娃氧化生成均匀的50A厚度的氧化层; [0 of 0] 2nd step; closed after deposition chamber in the same CVD, the deposition substrate is heated to ammonia Qiao l〇 ° C), while the use of ammonia to the sealed conduit introduced into the deposition chamber of (control of the concentration of 99.5% W), after about 15min, the amorphous portion of the surface Wa oxidation a uniform oxide layer thickness of 50A;

[0化1] 第=步;进入清洗机台用水进行清洗所述沉积基板上的颗粒。 [0 of 1] = the first step; into the washing machine was washed with water particles on the deposition substrate.

[0052] 正如本领域技术人员所理解的,前述功能和/或方法可W实施为系统、方法或计算机程序产品。 [0052] As those skilled in the art will appreciate, the features and / or W may be embodied as a system, method or computer program product. 例如,功能和/或方法可W实施为计算机可执行的程序指令,该指令记录在计算机可读的存储器件中,当通过计算机处理器检索和执行该指令时,其控制计算机系统W执行上述实施方案的功能和/或方法。 For example, functions and / or methods W may be implemented as computer-executable program instructions, which instructions recorded in a computer-readable memory device, when the computer processor retrieves and executes the instructions, which controls the computer system execute the above-described embodiment W function and / or programs. 在一个实施方案中,计算机系统可W包括一个或多个中央处理单元、计算机存储器(例如只读存储器、随机访问存储器)和数据存储器件(例如硬盘驱动器)。 In one embodiment, the computer system may comprise a W or more central processing units, computer memory (e.g., read-only memory, random access memory) and a data memory device (e.g., hard drive). 计算机可执行的指令可W使用任何适合的计算机编程语言(例如C++、 JAVA等)来编码。 Computer-executable instructions may be W using any suitable computer programming language (e.g. C ++, JAVA, etc.) encoded. 因此,本发明的一些方面可W采取整体为软件的实施方式的形式(包括固件、常驻软件、微码等),或结合了软件方面和硬件方面的实施方式。 Accordingly, some aspects of the present invention may take the form of a monolithic W as software embodiment (including firmware, resident software, microcode, etc.), or a combination of the embodiments of software and hardware aspects.

[0化3] 从上述说明中可W清楚,发明能很好地适合于实现目标并达到该里所提及的优势W及本公开所固有的优势。 [0 of 3] W from the above description may be apparent, the invention is well suited to achieve the objectives and to achieve the advantages inherent in the mentioned advantages of the present disclosure and W. 虽然出于本公开的目的已经描述了本发明的优选的实施方案, 然而可W理解的是,可W进行对于本领域技术人员而言显而易见的并且能够在本发明的精神下所完成的改变。 Although for purposes of the present disclosure has been described with preferred embodiments of the present invention, however, it can be understood that W, W may be carried to those skilled in the art and changes can be apparent in the finished spirit of the invention.

Claims (10)

  1. 1. 一种准分子激光退火前处理方法,包括: i) 用化学气相沉积法在基板上依次沉积SiNx层、SiOx层和和非晶硅层,得到沉积基板; ii) 然后,对所述沉积基板进行加热去氢,并在去氢的同时使用O2将部分表面非晶硅氧化生成均匀的30-50A厚度的氧化层; iii) 去氢结束时同时停止通O2,待冷却后,将步骤ii)得到的沉积基板进入清洗机,用水清洗所述沉积基板。 An excimer laser annealing before processing method comprising: i) using a chemical vapor deposition method are sequentially deposited on the substrate layer of SiNx, SiOx layer and an amorphous silicon layer, a deposition substrate; ii) Then, the deposition heating the substrate for dehydroepiandrosterone, using O2 partial surface oxidation of amorphous silicon oxide layer of a uniform thickness while 30-50A of dehydroepiandrosterone; rear iii) simultaneously O2 was stopped at the end of dehydroepiandrosterone, to be cooled, in step ii ) to give the deposition substrate into the washing machine, the washing water deposition substrate.
  2. 2. 根据权利要求1所述的方法,其特征在于,所述SiNx层是利用NH3和SiH4气体在加热的条件下发生反应生成的。 2. The method according to claim 1, wherein the SiNx layer is formed using NH3 and SiH4 gas reaction occurs under heating.
  3. 3. 根据权利要求1所述的方法,其特征在于,所述SiOx层是利用N20和5以4气体在加热的条件下发生反应生成的。 3. The method according to claim 1, wherein said SiOx layer is formed using N20 4 and 5 to the gas reaction occurs under heating.
  4. 4. 根据权利要求1所述的方法,其特征在于,所述非晶硅层是利用N2和SiH4气体在加热的条件下发生反应生成的。 4. The method according to claim 1, wherein said amorphous silicon layer is formed using SiH4 and N2 gas generating reaction under heating.
  5. 5. 根据权利要求1-4中任一项所述的方法,其特征在于,所述去氢是在470-5KTC下进行。 5. The method according to any one of claims 1-4, characterized in that said at harmine is 470-5KTC.
  6. 6. 根据权利要求1-4中任一项所述的方法,其特征在于,所述0 2的浓度控制在99%以上。 6. A method according to any one of claims 1-4, characterized in that the concentration of 02 is controlled to 99% or more.
  7. 7. 根据权利要求1-4中任一项所述的方法,其特征在于,步骤ii)的时间控制在10_15min〇 7. A method according to any one of claims 1-4, wherein step ii) time control 10_15min〇
  8. 8. 根据权利要求1-4中任一项所述的方法,其特征在于,对步骤iii)清洗得到的非晶硅基板进行准分子激光退火处理。 8. The method according to any one of claims 1-4, characterized in that the excimer laser annealing an amorphous silicon substrate in step iii) washing obtained.
  9. 9. 一种薄膜晶体管的生产方法,包括使用权利要求1-8中任一项所述的准分子激光退火前处理方法。 A method of producing a thin film transistor, comprising the pretreatment excimer laser annealing method as claimed in any one of claims use.
  10. 10. -种根据权利要求9所述的方法制造得到的薄膜晶体管。 A method for manufacturing a thin film transistor according to claim 9 species obtained - 10..
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