CN110211866A - A kind of method for etching plasma - Google Patents
A kind of method for etching plasma Download PDFInfo
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- CN110211866A CN110211866A CN201910420237.8A CN201910420237A CN110211866A CN 110211866 A CN110211866 A CN 110211866A CN 201910420237 A CN201910420237 A CN 201910420237A CN 110211866 A CN110211866 A CN 110211866A
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- 238000005530 etching Methods 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 68
- 238000006243 chemical reaction Methods 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000003085 diluting agent Substances 0.000 claims abstract description 27
- 239000006227 byproduct Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 25
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000001727 in vivo Methods 0.000 claims 1
- 238000001020 plasma etching Methods 0.000 abstract description 10
- 230000003068 static effect Effects 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 110
- 229910021417 amorphous silicon Inorganic materials 0.000 description 26
- 230000006378 damage Effects 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000007865 diluting Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 208000027418 Wounds and injury Diseases 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000003628 erosive effect Effects 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012372 quality testing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
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- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of method for etching plasma, and the method includes at least: providing one piece of substrate to be etched, the substrate is placed in reaction cavity；Main etching gas, auxiliary etch gas and diluent gas are imported into the reaction cavity；Residual charge is imported after to be etched, in Xiang Suoshu reaction cavity and removes gas, for removing the residual charge for being attached to the substrate surface；Remaining etching gas in the reaction cavity and the etch by-products are discharged by vacuum system.The present invention passes through after the etch step of method for etching plasma, increase the step of importing residual charge removal gas, so that residual charge removes gas and reacts with the residual charge of attachment on the metal layer, removal remains in the charge of layer on surface of metal, while the etching selection ratio and uniformity that ensure that plasma etching, solve the problems, such as that static discharge, which occurs, after etching in plasma etching processing procedure causes metal to wound.
Description
Technical field
The present invention relates to field of semiconductor fabrication processes more particularly to a kind of method for etching plasma.
Background technique
Plasma etching is one of the most common type form in dry etching, and principle is, under low pressure, reaction gas is being penetrated
Under the excitation of frequency power, generates and ionize and form plasma, plasma is made of the electronics and ion charged, reaction chamber
Gas in body is under the shock of electronics, other than being transformed into ion, moreover it is possible to absorb energy and form a large amount of active group；It is living
Property reactive group and the material surface that is etched form chemical reaction, and form volatile reaction product；Reaction product is de-
Cavity is extracted out from the material surface that is etched, and by vacuum system.
In parallel pole plasma reaction chamber, the object that is etched is positioned on the lesser electrode of area, this
Situation, a Dc bias can be formed between plasma and the electrode, and hit positively charged reaction gas ion acceleration
Be etched material surface, and this ion bombardment can greatly speed up the chemical reaction on surface and the desorption of reaction product, thus
Lead to very high etch rate, just because of the presence of ion bombardment, just anisotropic etching is achieved.
In existing 4mask technique, to realize that the completion of photoetching process has chance with the two of semiconductor layer and source-drain electrode layer
Layer pattern production first can carry out cineration technics to substrate and remove thin film transistor (TFT) (Thin Film Transistor, TFT) channel
The photoresist at place completely reveals the metal layer below photoresist, then by another etching, removes the metal at TFT channel
Layer forms source/drain electrode, and this meeting is so that metal layer is fully exposed in plasma environment at channel.Layer on surface of metal holds
Easily accumulative charge, will discharge when layer on surface of metal charge adds up to a certain extent, cause metal to wound, that is, so-called
Static discharge (Electro-Static discharge, ESD).ESD is destroyed caused by electronic product and damage have it is sudden
Damage and two kinds of latent injury, the former refers to that device is seriously damaged, function lose, it is this damage usually in production process
In quality testing in it can be found that；And the latter refers to that device portions are damaged, function is not yet lost, and in the inspection of production process
It cannot be found in survey, but product can be made to become unstable during use, be good or bad, thus product quality constituted bigger
Harm.
In conclusion being easy to happen static discharge phenomenon in existing plasma etch process, product function is caused to damage
It is bad.Therefore, it is necessary to a kind of plasma etching method is provided to improve this defect.
Summary of the invention
The present invention provides a kind of method for etching plasma, multiple for solving prior art test liquid crystal display panel voltage endurance capability
It is miscellaneous, it has not been convenient to the problem of.
The present invention provides a kind of method for etching plasma, and the method includes at least:
S10: one piece of substrate to be etched is provided, the substrate is placed in reaction cavity；
Main etching gas, auxiliary etch gas and use for adjusting etching ratio are imported in S20: Xiang Suoshu reaction cavity
The diluent gas of reactive material is not participated in other in diluting and adsorbing etch by-products；
S30: residual charge is imported after to be etched, in Xiang Suoshu reaction cavity and removes gas, is attached to for removing
The residual charge of the substrate surface；
S40: remaining etching gas in the reaction cavity and the etch by-products are discharged by vacuum system.
According to one preferred embodiment of the present invention, the main etching gas is NF3.
According to one preferred embodiment of the present invention, the auxiliary etch gas is CHF3.
According to one preferred embodiment of the present invention, the diluent gas is one of He, Ar or N2.
According to one preferred embodiment of the present invention, the flow of the diluent gas is greater than the flow of the main etching gas.
According to one preferred embodiment of the present invention, the technological parameter of the step S20 are as follows: the reaction cavity pressure limit is
30-150mTorr, dominant frequency power bracket are 3000-10000W, bias power range 500-8000W, the main etching gas
NF3 range of flow is 100-5000Sccm, and the auxiliary etch gas CHF3 range of flow is 100-1000Scm, the dilution
The range of flow of gas is 0-5000Sccm, and the step S20 etch period range is 30-150s.
According to one preferred embodiment of the present invention, the residual charge removal gas is 02.
According to one preferred embodiment of the present invention, in the step S30, the time that O2 is imported in Xiang Suoshu reaction cavity is
6s, O2 range of flow are 0-10000Sccm.
According to one preferred embodiment of the present invention, the step S40 duration ranges are 0-30s.
According to one preferred embodiment of the present invention, the material of the metal layer is copper.
Beneficial effects of the present invention: the present invention is by the way that after the etch step of method for etching plasma, increase is led
The step of entering residual charge removal gas, so that the residual charge generation of residual charge removal gas and attachment on the metal layer is anti-
It answers, removal remains in the charge of layer on surface of metal, while the etching selection ratio and uniformity that ensure that plasma etching,
Solve the problems, such as that static discharge, which occurs, after etching in plasma etching processing procedure causes metal to wound.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is the cross section structure schematic diagram of substrate to be etched provided by the invention；
Fig. 2 is a kind of flow diagram of method for etching plasma provided by the invention；
Fig. 3 is the cross section structure schematic diagram of substrate to be etched provided by Embodiment 2 of the present invention.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The present invention is described further in the following with reference to the drawings and specific embodiments:
Embodiment one:
A kind of method for etching plasma is provided in the present invention, below in conjunction with Fig. 1 to Fig. 2 to the plasma etching side
Method is described in detail.
Referring to Fig.1, Fig. 1 is the cross section structure schematic diagram of substrate 101 to be etched provided in this embodiment, from the bottom up successively
It is gate insulating layer 102, amorphous silicon layer 103, metal layer 104 and photoresist layer 105.
It is a kind of flow diagram of method for etching plasma provided in this embodiment, the method referring to Fig. 2, Fig. 2
It includes at least:
S10: one piece of substrate 101 to be etched is provided, the substrate 101 is placed in reaction cavity；
Main etching gas, auxiliary etch gas and use for adjusting etching ratio are imported in S20: Xiang Suoshu reaction cavity
The diluent gas of reactive material is not participated in other in diluting and adsorbing etch by-products；
S30: residual charge is imported after to be etched, in Xiang Suoshu reaction cavity and removes gas, is attached to for removing
The residual charge of the substrate surface；
S40: remaining etching gas in the reaction cavity and the etch by-products are discharged by vacuum system.
After the substrate to be etched 101 has already passed through grayscale mask plate exposure development before step S10, it is brilliant to form film
At the channel of body pipe.In subsequent etching process, the pattern for forming active semiconductor layer is first etched by the first step, is then passed through
The cineration technics of photoresist eliminates the photoresist at thin film transistor channel, completely reveals the metal layer below photoresist layer 105
104, it then can be carried out S10 step.
The needs of substrate to be etched 101 carry out plasma etching in reaction cavity.The reaction cavity includes
Air supply system and vacuum system.In step S20, main quarter is imported into the reaction cavity by the air supply system of reaction cavity
Erosion gas, the auxiliary etch gas for adjusting etching ratio and for diluting and adsorbing etch by-products and other are not participated in instead
Answer the diluent gas of substance.Air supply system by pressure controller and mass flow controller accurately control gas flow velocity and
Flow.
In the present embodiment, what is etched is amorphous silicon layer 103, so the main etching gas imported into reaction cavity
Containing F element, the etching gas for usually etching amorphous silicon layer 103 has CF4, C2F2, NF3 and SF6 etc., the most commonly used is
CF4.CF4 itself can't direct etching amorphous silicon layer 103, but impact with energetic electrons CF4 molecule in the plasma makes
Be cracked into CF3, CF2, C and F etc., these are all to have extremely strong chemically reactive atomic group.
In the present embodiment, in the step S20, being passed through auxiliary etch gas main function is for adjusting etching ratio.
Because in etching process, the upper metal layers 104 and lower layer's gate insulating layer 102 of the amorphous silicon layer 103 these not
The film layer for needing to be etched equally can also be etched, and not need the material that is etched so needing to be passed through protective gas to slow down
Etch rate.
In etching process, etch by-products can be generated, etch by-products do not participate in the more deposition of reactive material with other
On amorphous silicon layer 103 and the side wall of adjacent film layers, it is unfavorable for obtaining the relatively good steep section of effect.So the step
In rapid S20, it is also necessary to be passed through diluent gas, not participate in reactive material with other for diluting and adsorbing etch by-products, and lead to
Reaction cavity is discharged in these substances by the vacuum system for crossing reaction cavity.
In the present embodiment, the flow of diluent gas should be greater than the flow of main etching gas.
In the step S20, diluent gas is imported into reaction cavity, can not only increase total gas of reaction cavity
Flow increases the flow velocity of gas in cavity under same chamber pressure, can quickly take away generated etching by-product
Object, prevents the accumulation of by-product, to help to obtain steep section, while can also increase the speed of plasma etching
Rate.Under normal conditions, diluent gas cannot chemically react in reaction cavity, so being preferably selected inert gas.One
In a little embodiments, diluent gas can be one of He, Ar or N2.
In plasma etch process, reaction gas generates under the excitation of radio-frequency power and ionizes and form plasma
Body, plasma are made of the electronics and ion charged, and the gas in reaction cavity is under the shock of electronics, in addition to being transformed into
Outside ion, moreover it is possible to absorb energy and form a large amount of active group；Active reactive group and the material surface that is etched form chemistry
Reaction, and volatile reaction product is formed, and the part electronics of plasma is then attached to metal layer 104 and other films
Layer surface.When 104 surface charge of metal layer adds up to a certain extent, it will discharge and metal is caused to wound, lead to substrate device
It is destroyed.So after to be etched, importing residual charge in the step S30 into reaction cavity and removing gas, be used for
Removal is attached to the residual charge of the substrate surface.
Can still there are the remaining etching gas in part and etching by-product after step S30 terminates, in reaction cavity
Object is not discharged by vacuum system, so also needing to carry out step S40, carries out certain time by the vacuum system of reaction cavity
Gas exhaust treatment prevents from carving so that remaining etch by-products and the intracorporal etching gas of chamber are cleaned out completely on substrate 101
Erosion by-product and etching gas cause further to damage to substrate 101.
Embodiment two:
In the present embodiment, a kind of dry etching suitable for model TEL Impressio 2400ECCP is proposed to set
Standby method for etching plasma, plasma described in the process and embodiment one of method for etching plasma described in the present embodiment
Body lithographic method process is roughly the same.
It is the cross section structure schematic diagram of substrate 301 to be etched provided in this embodiment referring to Fig. 3, Fig. 3, from the bottom up successively
It is gate insulating layer 302, amorphous silicon layer 303, metal layer 304 and photoresist layer 305
The method for etching plasma includes:
S10: one piece of substrate 301 to be etched is provided, the substrate 301 is placed in reaction cavity；
Main etching gas, auxiliary etch gas and use for adjusting etching ratio are imported in S20: Xiang Suoshu reaction cavity
The diluent gas of reactive material is not participated in other in diluting and adsorbing etch by-products；
S30: residual charge is imported after to be etched, in Xiang Suoshu reaction cavity and removes gas, is attached to for removing
The residual charge of the substrate surface；
S40: remaining etching gas in the reaction cavity and the etch by-products are discharged by vacuum system.
What is etched is amorphous silicon layer 303, so the main etching gas imported into reaction cavity contains F element, is led to
Often the etching gas of etching amorphous silicon layer 303 has CF4, C2F2, NF3 and SF6 etc..In the present embodiment, use NF3 for main etching
Gas etching amorphous silicon layer 303.
In the present embodiment, in the step S20, being passed through auxiliary etch gas main function is for adjusting etching ratio.
Because in etching process, the upper metal layers 304 and lower layer's gate insulating layer 302 of the amorphous silicon layer 303 these not
The film layer for needing to be etched equally can also be etched, and not need the material that is etched so needing to be passed through auxiliary etch gas to slow down
The etch rate of material adjusts etching selection ratio as protective gas using CHF3, and diluent gas then uses He.In the work of radio frequency source
Under, CHF3 dissociates CF2+ group, covers 304 surface of metal layer, forms side wall protection, prevents plasma and charge from permeating
Accumulation, causes unnecessary damage to metal layer 304.
In the present embodiment, the technological parameter of step S20 are as follows: the reaction cavity pressure limit is 30-150mTorr, main
Frequency power bracket is 3000-10000W, bias power range 500-8000W, and the main etching gas NF3 range of flow is
100-5000Sccm, the auxiliary etch gas CHF3 range of flow are 100-1000Sccm, the flow model of the diluent gas
It encloses for 0-5000Sccm, the step S20 etch period range is 30-150s.
In the present embodiment, step S30, residual charge removal gas is O2, imported into reaction cavity O2 when
Between be 6s, O2 range of flow be 0-10000Sccm.
In the present embodiment, the step S40 duration ranges are 0-30s.
In the present embodiment, material selected by metal layer 304 is Cu.
Embodiment three:
In the present embodiment, a kind of dry etching suitable for model TEL Impressio 2400ECCP is proposed to set
Standby method for etching plasma, plasma described in the process and embodiment one of method for etching plasma described in the present embodiment
Body lithographic method process is roughly the same.
It is the cross section structure schematic diagram of substrate 301 to be etched provided in this embodiment referring to Fig. 3, Fig. 3, from the bottom up successively
It is gate insulating layer 302, amorphous silicon layer 303, metal layer 304 and photoresist layer 305
The method for etching plasma includes:
S10: one piece of substrate 301 to be etched is provided, the substrate 301 is placed in reaction cavity；
Main etching gas, auxiliary etch gas and use for adjusting etching ratio are imported in S20: Xiang Suoshu reaction cavity
The diluent gas of reactive material is not participated in other in diluting and adsorbing etch by-products；
S30: residual charge is imported after to be etched, in Xiang Suoshu reaction cavity and removes gas, is attached to for removing
The residual charge of the substrate surface；
S40: remaining etching gas in the reaction cavity and the etch by-products are discharged by vacuum system.
What is etched is amorphous silicon layer 303, so the main etching gas imported into reaction cavity contains F element, is led to
Often the etching gas of etching amorphous silicon layer 303 has CF4, C2F2, NF3 and SF6 etc..In the present embodiment, use NF3 for main etching
Gas etching amorphous silicon layer 303.
In the present embodiment, in the step S20, being passed through auxiliary etch gas main function is for adjusting etching ratio.
Because in etching process, the upper metal layers 304 and lower layer's gate insulating layer 302 of the amorphous silicon layer 303 these not
The film layer for needing to be etched equally can also be etched, and not need the material that is etched so needing to be passed through auxiliary etch gas to slow down
The etch rate of material adjusts etching selection ratio as protective gas using CHF3, and diluent gas then uses He.In the work of radio frequency source
Under, CHF3 dissociates CF2+ group, covers 304 surface of metal layer, forms side wall protection, prevents plasma and charge from permeating
Accumulation, causes unnecessary damage to metal layer 304.
In the present embodiment, the technological parameter of step S20 are as follows: the reaction cavity pressure is 70mTorr, and dominant frequency power is
5500W, substrate bias power 3500W, the main etching gas NF3 flow are 1000Sccm, the auxiliary etch gas CHF3 stream
Amount is 400Sccm, and the flow of the diluent gas is 1500Sccm, and the step S20 etch period is 90s.
In the present embodiment, step S30, residual charge removal gas is O2, imported into reaction cavity O2 when
Between be 6s, O2 flow be 8000Sccm.
In the present embodiment, the step S40 duration is 6s.
Example IV:
In the present embodiment, a kind of dry etching suitable for model TEL Impressio 2400ECCP is proposed to set
Standby method for etching plasma, plasma described in the process and embodiment one of method for etching plasma described in the present embodiment
Body lithographic method process is roughly the same.
It is the cross section structure schematic diagram of substrate 301 to be etched provided in this embodiment referring to Fig. 3, Fig. 3, from the bottom up successively
It is gate insulating layer 302, amorphous silicon layer 303, metal layer 304 and photoresist layer 305
The method for etching plasma includes:
S10: one piece of substrate 301 to be etched is provided, the substrate 301 is placed in reaction cavity；
Main etching gas, auxiliary etch gas and use for adjusting etching ratio are imported in S20: Xiang Suoshu reaction cavity
The diluent gas of reactive material is not participated in other in diluting and adsorbing etch by-products；
S30: residual charge is imported after to be etched, in Xiang Suoshu reaction cavity and removes gas, is attached to for removing
The residual charge of the substrate surface；
S40: remaining etching gas in the reaction cavity and the etch by-products are discharged by vacuum system.
What is etched is amorphous silicon layer 303, so the main etching gas imported into reaction cavity contains F element, is led to
Often the etching gas of etching amorphous silicon layer 303 has CF4, C2F2, NF3 and SF6 etc..In the present embodiment, use NF3 for main etching
Gas etching amorphous silicon layer 303.
In the present embodiment, in the step S20, being passed through auxiliary etch gas main function is for adjusting etching ratio.
Because in etching process, the upper metal layers 304 and lower layer's gate insulating layer 302 of the amorphous silicon layer 303 these not
The film layer for needing to be etched equally can also be etched, and not need the material that is etched so needing to be passed through auxiliary etch gas to slow down
The etch rate of material adjusts etching selection ratio as protective gas using CHF3, and diluent gas then uses He.In the work of radio frequency source
Under, CHF3 dissociates CF2+ group, covers 304 surface of metal layer, forms side wall protection, prevents plasma and charge from permeating
Accumulation, causes unnecessary damage to metal layer 304.
In the present embodiment, the technological parameter of step S20 are as follows: the reaction cavity pressure is 75mTorr, and dominant frequency power is
6000W, substrate bias power 4000W, the main etching gas NF3 flow are 1500Sccm, the auxiliary etch gas CHF3 stream
Amount is 600Sccm, and the flow of the diluent gas is 2000Sccm, and the step S20 etch period is 60s.
In the present embodiment, step S30, residual charge removal gas is O2, imported into reaction cavity O2 when
Between be 6s, O2 flow be 8500Sccm.
In the present embodiment, the step S40 duration is 12s.
Embodiment five:
In the present embodiment, a kind of dry etching suitable for model TEL Impressio 2400ECCP is proposed to set
Standby method for etching plasma, plasma described in the process and embodiment one of method for etching plasma described in the present embodiment
Body lithographic method process is roughly the same.
It is the cross section structure schematic diagram of substrate 301 to be etched provided in this embodiment referring to Fig. 3, Fig. 3, from the bottom up successively
It is gate insulating layer 302, amorphous silicon layer 303, metal layer 304 and photoresist layer 305
The method for etching plasma includes:
S10: one piece of substrate 301 to be etched is provided, the substrate 301 is placed in reaction cavity；
Main etching gas, auxiliary etch gas and use for adjusting etching ratio are imported in S20: Xiang Suoshu reaction cavity
The diluent gas of reactive material is not participated in other in diluting and adsorbing etch by-products；
S30: residual charge is imported after to be etched, in Xiang Suoshu reaction cavity and removes gas, is attached to for removing
The residual charge of the substrate surface；
S40: remaining etching gas in the reaction cavity and the etch by-products are discharged by vacuum system.
What is etched is amorphous silicon layer 303, so the main etching gas imported into reaction cavity contains F element, is led to
Often the etching gas of etching amorphous silicon layer 303 has CF4, C2F2, NF3 and SF6 etc..In the present embodiment, use NF3 for main etching
Gas etching amorphous silicon layer 303.
In the present embodiment, in the step S20, being passed through auxiliary etch gas main function is for adjusting etching ratio.
Because in etching process, the upper metal layers 304 and lower layer's gate insulating layer 302 of the amorphous silicon layer 303 these not
The film layer for needing to be etched equally can also be etched, and not need the material that is etched so needing to be passed through auxiliary etch gas to slow down
The etch rate of material adjusts etching selection ratio as protective gas using CHF3, and diluent gas then uses He.In the work of radio frequency source
Under, CHF3 dissociates CF2+ group, covers 304 surface of metal layer, forms side wall protection, prevents plasma and charge from permeating
Accumulation, causes unnecessary damage to metal layer 304.
In the present embodiment, the technological parameter of step S20 are as follows: the reaction cavity pressure is 70mTorr, and dominant frequency power is
7000W, substrate bias power 4000W, the main etching gas NF3 flow are 1000Sccm, the auxiliary etch gas CHF3 stream
Amount is 400Sccm, and the flow of the diluent gas is 2000Sccm, and the step S20 etch period is 80s.
In the present embodiment, step S30, residual charge removal gas is O2, imported into reaction cavity O2 when
Between be 6s, O2 flow be 9000Sccm.
In the present embodiment, the step S40 duration is 18s.
The present invention imports residual charge removal gas by increasing after the etch step of method for etching plasma
The step of, so that residual charge removes gas and reacts with the residual charge of attachment on the metal layer, removal remains in metal
The charge of layer surface solves plasma quarter while the etching selection ratio and uniformity that ensure that plasma etching
The problem of static discharge causes metal to wound occurs after etching in erosion processing procedure.
Although above preferred embodiment is not to limit in conclusion the present invention is disclosed above with preferred embodiment
The present invention, those skilled in the art can make various changes and profit without departing from the spirit and scope of the present invention
Decorations, therefore protection scope of the present invention is on the basis of the range that claim defines.
Claims (10)
1. a kind of method for etching plasma, which is characterized in that the method includes at least:
S10: one piece of substrate to be etched is provided, the substrate is placed in reaction cavity；
Main etching gas, the auxiliary etch gas for adjusting etching ratio are imported in S20: Xiang Suoshu reaction cavity and for dilute
It releases and adsorbs etch by-products and other do not participate in the diluent gas of reactive material；
S30: importing residual charge after to be etched, in Xiang Suoshu reaction cavity and remove gas, is attached to for removal described
The residual charge of substrate surface；
S40: remaining etching gas in the reaction cavity and the etch by-products are discharged by vacuum system.
2. method for etching plasma as described in claim 1, which is characterized in that the main etching gas is NF3.
3. method for etching plasma as claimed in claim 2, which is characterized in that the auxiliary etch gas is CHF3.
4. method for etching plasma as claimed in claim 3, which is characterized in that the diluent gas is in He, Ar or N2
One kind.
5. method for etching plasma as described in claim 1, which is characterized in that the flow of the diluent gas is greater than described
The flow of main etching gas.
6. method for etching plasma as described in claim 1, which is characterized in that the technological parameter of the step S20 are as follows: institute
Stating reaction cavity pressure limit is 30-150mTorr, and dominant frequency power bracket is 3000-10000W, bias power range 500-
8000, the main etching gas NF3 range of flow is 100-5000Sccm, and the auxiliary etch gas CHF3 range of flow is
100-1000Sccm, the range of flow of the diluent gas are 0-5000Sccm, and the step S20 etch period range is 30-
150s。
7. method for etching plasma as described in claim 1, which is characterized in that the residual charge removal gas is O2.
8. method for etching plasma as claimed in claim 7, which is characterized in that in the step S30, Xiang Suoshu reaction chamber
The time for importing O2 in vivo is 6s, and O2 range of flow is 0-10000Sccm.
9. method for etching plasma as described in claim 1, which is characterized in that the step S40 duration ranges are
0-30s。
10. method for etching plasma as described in claim 1, which is characterized in that the material of the metal layer is copper.
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