CN104465347A - Polycrystalline silicon surface processing method and system - Google Patents
Polycrystalline silicon surface processing method and system Download PDFInfo
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- CN104465347A CN104465347A CN201310439014.9A CN201310439014A CN104465347A CN 104465347 A CN104465347 A CN 104465347A CN 201310439014 A CN201310439014 A CN 201310439014A CN 104465347 A CN104465347 A CN 104465347A
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- polysilicon
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 238
- 238000003672 processing method Methods 0.000 title claims abstract description 19
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 158
- 230000003647 oxidation Effects 0.000 claims abstract description 147
- 238000000034 method Methods 0.000 claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 229920005591 polysilicon Polymers 0.000 claims description 229
- 239000007788 liquid Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- 239000000428 dust Substances 0.000 claims description 7
- 238000004381 surface treatment Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- IXSZQYVWNJNRAL-UHFFFAOYSA-N etoxazole Chemical compound CCOC1=CC(C(C)(C)C)=CC=C1C1N=C(C=2C(=CC=CC=2F)F)OC1 IXSZQYVWNJNRAL-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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Abstract
The invention discloses a polycrystalline silicon surface processing method and system in the technical field of semiconductor manufacturing. The method includes the steps of firstly, generating an oxidation layer with the preset thickness on the surface of the polycrystalline silicon towards the inner portion of polycrystalline silicon; secondly, executing the oxidation layer removal operation so that the polycrystalline silicon can reach the preset thickness. The polycrystalline silicon is further processed on an electronic device, and therefore various sizes of polycrystalline silicon can be manufactured according to requirements, the manufacturing process level of the electronic product is greatly improved, and possibility is provided for the manufacturing of electronic chips higher in integrity.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly polysilicon surface processing method and system.
Background technology
Along with the raising of modern manufacturing level, the size of the chip of electronic device is more and more less, and power consumption is more and more lower.In order to improve the integrated level of chip further, in metal-oxide semiconductor (MOS) (CMOS) technique, need less polysilicon size.
Usually our chip size of saying, what in fact refer to is exactly the live width of grid polycrystalline silicon in chip.And want the live width of the grid polycrystalline silicon manufacturing smaller szie, usually can only rely on more advanced exposure bench.The size that such as exposure machine of G line is minimum can accomplish 0.8 micron, and the minimum size of the exposure machine of I line can accomplish 0.4 micron.
Traditional define method generally has the following steps:
The first step, growth gate oxide; Second step, deposit spathic silicon; 3rd step, polysilicon resistance lowering; 4th step, spin coating photoresistance, utilizes exposure machine to expose, and then by the mode of development, the photoresistance of exposure area is washed off, only leaves the region not having to expose.The size of polysilicon is here just decided; 5th step, dry etching, falls the etching polysilicon of exposure area, does not have exposure area, because there is photoresistance to protect, polysilicon stays; 6th step, removes the photoresistance on polysilicon;
Through above-mentioned six steps, polysilicon lines have just been made.
The dimension limit of existing I line exposing machine can accomplish 0.4 micron, but the polysilicon size that some special occasions need is often beyond the limit capacity of exposure machine.If also produce with existing exposure machine, then can cause that product is not up to standard or disqualification rate is high.
Summary of the invention
The invention provides polysilicon surface processing method and system, to solve in existing electronic chip manufacturing process problems such as the accuracy of manufacture of polysilicon are not high.
In order to solve the problems of the technologies described above, the invention provides a kind of polysilicon surface processing method, be applied to the technique of carrying out production utilizing polysilicon, described polysilicon surface processing method comprises the following steps:
Generate the oxide layer of setting thickness to described polysilicon inside on the surface of described polysilicon;
Execution oxide layer operates, and makes polysilicon reach preset thickness.
Further, the described oxide layer generating setting thickness to described polysilicon inside on the surface of described polysilicon is specially:
Be that setting position arranges oxidation control sheet apart from described polysilicon;
Oxidation operation is carried out to described polysilicon and oxidation control sheet;
When the thickness of the oxide layer by detecting described oxidation control sheet learns that the thickness of the oxide layer of described polysilicon reaches set point, stop oxidation operation.
Further, described oxidation control sheet is eigenstate material.
Further, described eigenstate material is monocrystalline silicon.
Further, described oxide layer is generated by dry oxidation.
Further, described execution oxide layer operation, makes polysilicon reach preset thickness and is specially:
The described polysilicon of the oxide layer comprising setting thickness is placed in rinsing equipment;
In described rinsing equipment, put into rinsing liquid, described in rinsing, polysilicon is to preset thickness.
Further, described rinsing liquid is hydrofluoric acid solution, and the concentration of described hydrofluoric acid solution is 100:1, is 0.7-1.3 dust/second to the etch-rate of described oxide layer.
Present invention also offers a kind of polysilicon surface treatment system, be applied to the technique of carrying out production utilizing polysilicon, described polysilicon surface processing unit comprises:
Oxide layer generation unit, for generating the oxide layer of setting thickness to described polysilicon inside on the surface of described polysilicon;
Oxide layer unit, for performing oxide layer operation, makes polysilicon reach preset thickness.
Further, described oxide layer generation unit comprises:
Control strip setting unit, for being that setting position arranges oxidation control sheet apart from described polysilicon;
Oxidation unit, for carrying out oxidation operation to described polysilicon and oxidation control sheet;
Oxide layer control unit, for when the thickness of the oxide layer by detecting described oxidation control sheet learns that the thickness of the oxide layer of described polysilicon reaches set point, stops oxidation operation.
Further, described oxide layer unit comprises:
Shift unit, for being placed in rinsing equipment by the described polysilicon of the oxide layer comprising setting thickness;
Rinse unit, for putting into rinsing liquid in described rinsing equipment, described in rinsing, polysilicon is to preset thickness.
Compared to the prior art, the beneficial effect of technical scheme of the present invention is as follows:
1. the present invention is first oxidized polysilicon on electronic product, form certain thickness polysilicon oxide layer, then oxide layer operation is carried out to polysilicon oxide layer, the size of polysilicon can be reduced further, drastically increase technological level, for the electronic chip manufacturing more high integration provides possibility;
2. on the basis of existing technique, add oxidation technology and deoxidise process, operating process is simple, needs extra material cost hardly;
3. increase oxidation technology and deoxidise process low for equipment requirements, without the need to buying professional equipment, saved manufacturing cost.
Accompanying drawing explanation
Fig. 1 represents the flow chart of polysilicon surface processing method of the present invention;
Fig. 2 represents the composition frame chart of polysilicon surface treatment system of the present invention;
Fig. 3 represents that embodiment 3 grows the design sketch of gate oxide;
Fig. 4 represents the design sketch of embodiment 3 deposit spathic silicon;
Fig. 5 represents the design sketch of embodiment 3 spin coating photoresistance;
Fig. 6 represents the design sketch of embodiment 3 dry etching
Fig. 7 represents that embodiment 3 removes the design sketch of the photoresistance on polysilicon
Fig. 8 represents that embodiment 3 generates the design sketch of polysilicon oxide layer;
Fig. 9 represents the design sketch after embodiment 3 rinsing polysilicon oxide layer.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
In order to solve in existing electronic chip manufacturing process problems such as the accuracy of manufacture of polysilicon are not high, the invention provides polysilicon surface processing method and system.
Embodiment 1
A kind of polysilicon surface processing method, the method is applied to the manufacture field of electronic device and chip, as transistor, light-emitting diode, printed circuit board etc.Or rather, be applied to the technique of carrying out production utilizing polysilicon, described polysilicon surface processing method comprises the following steps:
S1: the oxide layer generating setting thickness on the surface of described polysilicon to described polysilicon inside;
S2: perform oxide layer operation, make polysilicon reach preset thickness.
The present invention is first oxidized polysilicon on electronic product, form certain thickness polysilicon oxide layer, then oxide layer operation is carried out to polysilicon oxide layer, the size of polysilicon can be reduced further, drastically increase technological level, for the electronic chip manufacturing more high integration provides possibility.
The inventive method adds oxidation technology and deoxidise process on the basis of existing technique, and operating process is simple, needs extra material cost hardly.Further, oxidation technology and the deoxidise process of increase are low for equipment requirements, without the need to buying professional equipment, have saved manufacturing cost.The flow chart of the inventive method as shown in Figure 1.
In order to realize the present invention, first existing technical process to be completed.Then oxidation operation is carried out to polysilicon.The method of oxidation is a lot, as chemical oxidization method, electroxidation method etc.The present invention generates the oxide layer of polysilicon by dry oxidation.Then, by above-mentioned steps S1, the surface of polysilicon is processed further.Step S1 specifically comprises:
S11: be that setting position arranges oxidation control sheet apart from described polysilicon;
Because the thickness of oxide layer is very little, naked eyes cannot be seen at all.And in the process of polysilicon oxidation, oxide layer is to polysilicon internal oxidation, this just adds the difficulty detected oxidated layer thickness more.Therefore, before oxidation operation is carried out to polysilicon, first needing the position from polysilicon being suitable distance that oxidation control sheet is set, being monitored by the thickness of measurement to the oxide layer of polysilicon of the oxidated layer thickness to oxidation control sheet.
Oxidation control sheet needs to consider the oxidation environment in oxidizing process from the concrete distance of polysilicon, makes polysilicon and oxidation control sheet can be oxidized under on all four oxidation environment as far as possible.Common way be by polysilicon and oxidation control sheet as far as possible close.
In order to improve the certainty of measurement of oxidation control sheet oxide layer, usually select with the material of polysilicon similar nature as oxidation control sheet.Described oxidation control sheet of the present invention is eigenstate material.Described eigenstate material is chosen as monocrystalline silicon.
S12: oxidation operation is carried out to described polysilicon and oxidation control sheet;
The position completing oxidation control sheet and polysilicon put and oxidation control sheet selection after, start to implement oxidation operation to polysilicon and oxidation control sheet.The method of oxidation is a lot, as chemical oxidization method, electroxidation method etc.Meanwhile, the thickness of the oxide layer of the polysilicon generated under identical conditions also carries out resistance lowering during with polysilicon, the technique of employing is relevant.The present invention generates the oxide layer of polysilicon by dry oxidation.
Dry oxidation is in an environment of high temperature, passes into oxygen at boiler tube, and oxidation control sheet is placed in this environment, allows oxidation control sheet and oxygen react, and generating the process of oxide layer, is below some concrete data:
Temperature 900C, oxygen flow 10 liters/min, oxidization time 168min, can be oxidized out the oxide layer of 378 dusts;
Temperature 950C, oxygen flow 10 liters/min, oxidization time 76min, can be oxidized out the oxide layer of 378 dusts;
Temperature 1000C, oxygen flow 10 liters/min, oxidization time 36min, can be oxidized out the oxide layer of 378 dusts;
Temperature 1050C, oxygen flow 10 liters/min, oxidization time 18min, can be oxidized out the oxide layer of 378 dusts.
S13: when the thickness of the oxide layer by detecting described oxidation control sheet learns that the thickness of the oxide layer of described polysilicon reaches set point, stop oxidation operation.
After the information such as the material of the technique adopted when knowing polysilicon resistance lowering, oxidation control sheet and oxidation environment, just can obtain the thickness proportion of the oxide layer that oxidation control sheet and polysilicon generate under same oxidation environment.Therefore, by the thickness of the oxide layer of oxidation control sheet can indirect inspection to the thickness of the oxide layer of polysilicon.
First detect the size of the polysilicon before not being oxidized, calculate the difference of size of the size of polysilicon and the polysilicon before not being oxidized needed, then according to the thickness because usually determining the oxide layer needing oxidation control sheet to generate such as the material of oxidation control sheet and oxidation environment.
Then, be oxidized under polysilicon and oxidation control sheet together being put into oxidation environment.After oxidizing process continues for some time, stop oxidizing process, the thickness of oxidation control sheet is detected, if the thickness of the oxide layer of oxidation control sheet does not reach set point, then illustrate that polysilicon does not now generate the oxide layer setting thickness yet, then continue oxidation under again polysilicon and oxidation control sheet being placed in oxidation environment; If the thickness of the oxide layer of oxidation control sheet just in time reaches set point, then illustrate that polysilicon now also just in time generates the oxide layer setting thickness, then subsequent treatment is carried out to polysilicon; If the thickness of the oxide layer of oxidation control sheet exceedes set point, then the polysilicon illustrating now also creates the oxide layer exceeding setting thickness, then follow-up to the processing procedure of polysilicon in need to do respective handling to oxide layer.
Above-mentioned oxidation operation obtains the polysilicon oxide layer of suitable thickness, needs afterwards to carry out oxide layer operation.The method of oxide layer is a lot, as sandblasting, pickling, chemical polishing and electrobrightening.Wherein, easily there is high temperature in sand-blast in operation, makes miscellaneous part receive impact; The technological parameter of chemical polishing is difficult to control, and can not carry out oxide layer operation to high-precision object; Electrobrightening is to baroque device, and the effect of oxide layer is bad.Acid wash can remove oxide layer fast, and can not produce the pollution of other elements.Therefore, the present invention adopts acid wash to carry out oxide layer operation, and the operation of the oxide layer of step S2 specifically comprises:
S21: the described polysilicon of the oxide layer comprising setting thickness is placed in rinsing equipment;
Take out the polysilicon generating oxide layer from oxidation environment after, polysilicon is placed in rinsing equipment, the size of neglecting greatly the product comprising polysilicon of rinsing equipment and determining.
S22: put into rinsing liquid in described rinsing equipment, described in rinsing, polysilicon is to preset thickness.
For comprise polysilicon electronic product material and need to rinse the thickness of polysilicon oxide layer, need to select rinsing liquid.Rinsing liquid wants the oxide layer that can rinse polysilicon, and does not damage other parts of electronic product.After determining the rinsing liquid type selected, also to calculate the concentration of rinsing liquid, the concentration of rinsing liquid determines precision and the surface smoothness of polysilicon size after oxide layer to a great extent, depending on the application scenario of polysilicon, Product Precision require and properties of product require.
Finally need to control the time that polysilicon puts into rinsing liquid, now have two kinds of optional manner: one, rinsing liquid is not changed in rinse cycle, inject or discharge, under this condition, As time goes on, the concentration of rinsing liquid is reducing, bad control on the time; Two, adopt rinsing liquid to rinse the method for electronic product, in this case, polysilicon is in the rinsing liquid of constant density always, and the speed of rinsing oxide layer easily controls, and precision is higher.
Rinsing liquid of the present invention can select hydrofluoric acid solution, and the concentration of hydrofluoric acid solution is adjustable is 100:1, like this, is exactly 0.7-1.3 dust/second to the etch-rate of oxide layer.
Embodiment 2
Present invention also offers a kind of polysilicon surface treatment system, be applied to the technique of carrying out production utilizing polysilicon, as shown in Figure 2, described polysilicon surface processing unit comprises:
Oxide layer generation unit 10, for generating the oxide layer of setting thickness to described polysilicon inside on the surface of described polysilicon;
Oxide layer unit 20, for performing oxide layer operation, makes polysilicon reach preset thickness.
The present invention is first oxidized polysilicon on electronic product, form certain thickness polysilicon oxide layer, then oxide layer operation is carried out to polysilicon oxide layer, the size of polysilicon can be reduced further, drastically increase technological level, for the electronic chip manufacturing more high integration provides possibility.The inventive method adds oxidation technology and deoxidise process on the basis of existing technique, and operating process is simple, needs extra material cost hardly.Further, oxidation technology and the deoxidise process of increase are low for equipment requirements, without the need to buying professional equipment, have saved manufacturing cost.
Wherein, described oxide layer generation unit 10 comprises:
Control strip setting unit 11, for being that setting position arranges oxidation control sheet apart from described polysilicon;
Because the thickness of oxide layer is very little, naked eyes cannot be seen at all.And in the process of polysilicon oxidation, oxide layer is to polysilicon internal oxidation, this just adds the difficulty detected oxidated layer thickness more.Therefore, before oxidation operation is carried out to polysilicon, first need the position by control strip setting unit 11 from polysilicon is being suitable distance that oxidation control sheet is set, and monitored by the thickness of measurement to the oxide layer of polysilicon of the oxidated layer thickness to oxidation control sheet.
Oxidation control sheet needs to consider the oxidation environment in oxidizing process from the concrete distance of polysilicon, makes polysilicon and oxidation control sheet can be oxidized under on all four oxidation environment as far as possible.Common way be by polysilicon and oxidation control sheet as far as possible close.In order to improve the certainty of measurement of oxidation control sheet oxide layer, usually select with the material of polysilicon similar nature as oxidation control sheet.Described oxidation control sheet of the present invention is eigenstate material.Described eigenstate material is chosen as monocrystalline silicon.
Control strip setting unit 11 has the fine adjustment function of vertical direction and horizontal direction, and oxidation control sheet can be made to be arranged on as required on the appropriate location of polysilicon.
Oxidation unit 12, for carrying out oxidation operation to described polysilicon and oxidation control sheet;
The position completing oxidation control sheet and polysilicon put and oxidation control sheet selection after, begin through oxidation unit 12 pairs of polysilicons and oxidation control sheet implements oxidation operation.The method of oxidation is a lot, as chemical oxidization method, electroxidation method etc.Meanwhile, the thickness of the oxide layer of the polysilicon generated under identical conditions also carries out resistance lowering during with polysilicon, the technique of employing is relevant.
Oxidation unit 12 provides oxidation environment for polysilicon and oxidation control sheet, makes polysilicon and oxidation control sheet form oxide layer on all four environment, most important for the thickness controlling the oxide layer that polysilicon generates.The present invention generates the oxide layer of polysilicon by dry oxidation.Below some the concrete data by oxidation unit 12 just oxidation operation:
Temperature 900C, oxygen flow 10 liters/min, oxidization time 168min, can be oxidized out the oxide layer of 378 dusts;
Temperature 950C, oxygen flow 10 liters/min, oxidization time 76min, can be oxidized out the oxide layer of 378 dusts;
Temperature 1000C, oxygen flow 10 liters/min, oxidization time 36min, can be oxidized out the oxide layer of 378 dusts;
Temperature 1050C, oxygen flow 10 liters/min, oxidization time 18min, can be oxidized out the oxide layer of 378 dusts.
Oxide layer control unit 13, for when the thickness of the oxide layer by detecting described oxidation control sheet learns that the thickness of the oxide layer of described polysilicon reaches set point, stops oxidation operation.
After knowing that polysilicon resistance lowering is the information such as technique, the material of oxidation control sheet and the oxidation environment adopted, just obtain the thickness proportion of the oxide layer that oxidation control sheet and polysilicon generate under same oxidation environment by oxidation unit 12.Therefore, by the thickness of the oxide layer of oxidation control sheet can indirect inspection to the thickness of the oxide layer of polysilicon.
First detect the size of the polysilicon before not being oxidized, calculate the difference of size of the size of polysilicon and the polysilicon before not being oxidized needed, then according to the thickness because usually determining the oxide layer needing oxidation control sheet to generate such as the material of oxidation control sheet and oxidation environment.
Then, be oxidized under polysilicon and oxidation control sheet together being put into oxidation environment by oxidation unit 12.After oxidizing process continues for some time, stop oxidizing process, detected by the thickness of oxide layer control unit 13 pairs of oxidation control sheets, if the thickness of the oxide layer of oxidation control sheet does not reach set point, then illustrate that polysilicon does not now generate the oxide layer setting thickness yet, then continue oxidation under again polysilicon and oxidation control sheet being placed in oxidation environment; If the thickness of the oxide layer of oxidation control sheet just in time reaches set point, then illustrate that polysilicon now also just in time generates the oxide layer setting thickness, then subsequent treatment is carried out to polysilicon; If the thickness of the oxide layer of oxidation control sheet exceedes set point, then the polysilicon illustrating now also creates the oxide layer exceeding setting thickness, then follow-up to the processing procedure of polysilicon in need to do respective handling to oxide layer.
After completing above-mentioned oxidation operation, need the operation by oxide layer unit 20 oxide layer, oxide layer unit 20 specifically comprises:
Shift unit 21, for being placed in rinsing equipment by the described polysilicon of the oxide layer comprising setting thickness;
Take out the polysilicon generating oxide layer from oxidation environment after, by shift unit 21, polysilicon is placed in rinsing equipment, the size of neglecting greatly the product comprising polysilicon of rinsing equipment and determining.Shift unit 21 can for having the gripper jaw of holding function or other can be fixed and the device of mobile object.
Rinse unit 22, for putting into rinsing liquid in described rinsing equipment, described in rinsing, polysilicon is to preset thickness.
For comprise polysilicon electronic product material and need to rinse the thickness of polysilicon oxide layer, need to select rinsing liquid.Rinsing liquid wants the oxide layer that can rinse polysilicon, and does not damage other parts of electronic product.After determining the rinsing liquid type selected, also to calculate the concentration of rinsing liquid, the concentration of rinsing liquid determines precision and the surface smoothness of polysilicon size after oxide layer to a great extent, depending on the application scenario of polysilicon, Product Precision require and properties of product require.
Finally need to control the time that polysilicon puts into rinsing liquid, now have two kinds of optional manner: one, rinsing liquid is not changed in rinse cycle, inject or discharge, under this condition, As time goes on, the concentration of rinsing liquid is reducing, bad control on the time; Two, adopt rinsing liquid to rinse the method for electronic product, in this case, polysilicon is in the rinsing liquid of constant density always, and the speed of rinsing oxide layer easily controls, and precision is higher.
Rinsing liquid of the present invention can select hydrofluoric acid solution, and the concentration of hydrofluoric acid solution is adjustable is 100:1, like this, is exactly 0.7-1.3 dust/second to the etch-rate of oxide layer.
Embodiment 3
Below by way of an actual scene, the present invention will be described.
The inventive method can produce the polysilicon live width exceeding exposure machine limit capacity.The oxidation rate that present invention utilizes the polysilicon through injecting will faster than the characteristic of the silicon of eigen state.Utilize this principle, can by polysilicon oxidation, to reduce polysilicon size.
Relate to main technological steps of the present invention as follows, aforesaid six steps are consistent with existing method:
The first step, growth gate oxide, comprises substrate 1 and gate oxide 2; As shown in Figure 3.
Second step, deposit spathic silicon, is deposited on the top of described gate oxide 2 by polysilicon 3; As shown in Figure 4;
3rd step, polysilicon resistance lowering, common resistance lowering technique has ion implantation and boiler tube doping, only has the polysilicon of resistance lowering could as grid;
4th step, spin coating photoresistance, utilizes exposure machine to define polysilicon region, and needing to retain photoresistance 4 above reservation polysilicon, the size of photoresistance 4 will meet the dimensional requirement of polysilicon 3.As shown in Figure 5;
5th step, dry etching, etches away unwanted polysilicon 3, only leaves the polysilicon 3 in photoresistance region, as shown in Figure 6;
6th step, removes the photoresistance 4 on polysilicon, removes the design sketch after photoresistance 4 as shown in Figure 7;
Above step is consistent with existing method, has needed concrete operations of the present invention afterwards.
7th step, growing polycrystalline silicon oxide layer 5.Thickness is determined according to needing.Such as, the polysilicon live width of setting is 0.4 micron, if will obtain the live width of 0.35 micron, just needs the silicon respectively oxidizing away 0.025 micron in polysilicon both sides, that is will grow the oxide layer of 0.025 micron/0.44=0.0568 micron on the polysilicon.
Wherein, 0.44 be polysilicon be not oxidized with polysilicon oxidation after Thickness Ratio.Thickness unit is " dust " herein, the English of " dust " meet for
.So, after micron being scaled dust be
oxide layer.
And grow the thickness monitoring of the technique of oxide layer, can not remove to measure the oxidated layer thickness on so baguette, common way is in the process of growth oxide layer, put a slice oxidation control sheet, this oxidation control sheet is close to the silicon of intrinsic, by measuring the thickness of oxide layer on oxidation control sheet in control wafer, monitor the thickness of polysilicon oxide layer 5.
Rule of thumb, if the resistance lowering of polysilicon is realized by boiler tube thermal diffusion, the oxidated layer thickness so on oxidation control sheet is 1:1.5 with the ratio of polysilicon oxide layer 5 thickness.So want to grow on the polysilicon
oxide layer, so need to grow on oxidation control sheet
oxidated layer thickness.Meanwhile, owing to also having the protection of grid oxygen in active area, the oxidated layer thickness that the oxide layer of this step grows on the active area will far less than the oxidated layer thickness of oxidation control sheet.On the other hand, the reduction of polysilicon thickness (in this example is
) compared to polysilicon
thickness, be almost negligible, and it does not also affect device parameters.As shown in Figure 8;
8th step, rinses partial polysilicon oxide layer with hydrofluoric acid solution;
Although oxidation operation is carried out according to the dimensional requirement of polysilicon setting, the thickness of the polysilicon oxide layer 5 generated in reality still has some deviations, so rinse cycle is divided into two classes:
One, complete rinsing, when generate polysilicon oxide layer just in time meet the requirements or polysilicon oxide layer thickness allow error range in time, the polysilicon oxide layer of generation can be rinsed completely, as shown in Figure 9.
Two, part rinsing, when the thickness of the polysilicon oxide layer generated exceedes set point a lot, during beyond error allowed band, can affect follow-up source and drain and inject.In order to meet technological requirement, just needing reserve part polysilicon oxide layer, meeting technological requirement to make the polysilicon oxide layer be left together with polysilicon.
In part rinse cycle, also will consider that polysilicon oxide layer can not impact the electric property of electronic product, be specially, the thickness of polysilicon oxide layer is depending on the performance requirement of electronic product and dimensional requirement.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the technology of the present invention principle; can also make some improvement and replacement, these improve and replace and also should be considered as protection scope of the present invention.
Claims (10)
1. a polysilicon surface processing method, is applied to the technique of carrying out production utilizing polysilicon, it is characterized in that, described polysilicon surface processing method comprises the following steps:
Generate the oxide layer of setting thickness to described polysilicon inside on the surface of described polysilicon;
Execution oxide layer operates, and makes polysilicon reach preset thickness.
2. polysilicon surface processing method as claimed in claim 1, is characterized in that, the described oxide layer generating setting thickness to described polysilicon inside on the surface of described polysilicon is specially:
Be that setting position arranges oxidation control sheet apart from described polysilicon;
Oxidation operation is carried out to described polysilicon and oxidation control sheet;
When the thickness of the oxide layer by detecting described oxidation control sheet learns that the thickness of the oxide layer of described polysilicon reaches set point, stop oxidation operation.
3. polysilicon surface processing method as claimed in claim 2, it is characterized in that, described oxidation control sheet is eigenstate material.
4. polysilicon surface processing method as claimed in claim 3, it is characterized in that, described eigenstate material is monocrystalline silicon.
5. polysilicon surface processing method as claimed in claim 1, it is characterized in that, described oxide layer is generated by dry oxidation.
6. polysilicon surface processing method as claimed in claim 1, is characterized in that, described execution oxide layer operation, makes polysilicon reach preset thickness and be specially:
The described polysilicon of the oxide layer comprising setting thickness is placed in rinsing equipment;
In described rinsing equipment, put into rinsing liquid, described in rinsing, polysilicon is to preset thickness.
7. polysilicon surface processing method as claimed in claim 6, it is characterized in that, described rinsing liquid is hydrofluoric acid solution, and the concentration of described hydrofluoric acid solution is 100:1, is 0.7-1.3 dust/second to the etch-rate of described oxide layer.
8. a polysilicon surface treatment system, is applied to the technique of carrying out production utilizing polysilicon,
It is characterized in that, described polysilicon surface processing unit comprises:
Oxide layer generation unit, for generating the oxide layer of setting thickness to described polysilicon inside on the surface of described polysilicon;
Oxide layer unit, for performing oxide layer operation, makes polysilicon reach preset thickness.
9. polysilicon surface treatment system as claimed in claim 8, is characterized in that, described in be oxidized to generating layer unit and comprise:
Control strip setting unit, for being that setting position arranges oxidation control sheet apart from described polysilicon;
Oxidation unit, for carrying out oxidation operation to described polysilicon and oxidation control sheet;
Oxide layer control unit, for when the thickness of the oxide layer by detecting described oxidation control sheet learns that the thickness of the oxide layer of described polysilicon reaches set point, stops oxidation operation.
10. polysilicon surface treatment system as claimed in claim 8, it is characterized in that, described oxide layer unit comprises:
Shift unit, for being placed in rinsing equipment by the described polysilicon of the oxide layer comprising setting thickness;
Rinse unit, for putting into rinsing liquid in described rinsing equipment, described in rinsing, polysilicon is to preset thickness.
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