CN104465314A - Method and system for drying chip stacking structure - Google Patents
Method and system for drying chip stacking structure Download PDFInfo
- Publication number
- CN104465314A CN104465314A CN201310437352.9A CN201310437352A CN104465314A CN 104465314 A CN104465314 A CN 104465314A CN 201310437352 A CN201310437352 A CN 201310437352A CN 104465314 A CN104465314 A CN 104465314A
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- China
- Prior art keywords
- stack structure
- chip stack
- organic solvent
- accumulator tank
- chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
Abstract
The invention discloses a method for drying a chip stacking structure. The method comprises the following steps that the chip stacking structure washed by deionized water is provided, the chip stacking structure is moved into a storage tank with organic solvents contained, then the residual deionized water on the chip stacking structure is replaced by the organic solvents, and finally, the chip stacking structure is moved into a vacuum drying chamber and stored for a preset time in a vacuum environment.
Description
Technical field
The present invention relates to a kind of wafer clean after dry technology, particularly relate to a kind of three-dimensional, the drying means of chip stack structure of perpendicular interconnection and system thereof.
Background technology
Microprocessor chip generally includes logical block and multiple high-speed cache, if both are all with two dimension (two-dimensional; 2-D) pattern arrangement, then chip entity size can be restricted to the quantity (caused by the technique of large-area chips is bad) of high-speed cache, thus strictly limits the performance of microprocessor.
In order to solve the 2-D resource problem on chip, positive active development sets up three-dimensional (three-dimensional now; 3-D) the method for integrated circuit.For example, a typical 3-D IC technique comprises: the formation (Via Formation) of guide hole, the filling (Via Filling) of guide hole, wafer thinning (Wafer Thinning) and wafer engage four large steps such as (Wafer Bonding).But current wafer and wafer or the gap between wafer and chip join are less than 20 ~ 30 μm usually, therefore how carry out cleaning for the flux in this kind of minim gap or other impurity and dry, for being badly in need of the technical bottleneck of the challenge that overcomes at present.
Usually all must carry out wafer to clean and the step of drying in the front and back of every one semiconductor technology, pollute in processing procedure to avoid wafer.In semiconductor technology, the pollution of wafer has particulate contamination and the large class of fouling membrane two, wherein the foreign matter of fouling membrane mainly on wafer caused, and similarly is the residual organic solvent such as acetone, trichloroethylene, isopropyl alcohol, methyl alcohol, dimethylbenzene or photoresistance developer, oil film and metal film.Only; drying process conventional at present uses nitrogen drying wafer; but current development trend makes exquisite three-D pattern on large-sized wafer; therefore after often occurring in clean step wafer not exclusively dry or cannot be dry phenomenon; thus sizable harmful effect is produced to follow-up technique; and then reduce yield significantly, even cause that wafer is large to be scrapped.
Therefore, the present inventor is because existing wafer dry technology has its necessity improved really, then the design of association area and professional manufacturing experience is engaged in for many years with it, carry out research improvement for wafer drying method and drying device energetically, under the discretion of each side's condition is considered, finally develop the present invention's " drying means of chip stack structure ".
Summary of the invention
The present invention is directed to the disappearance that prior art exists, its main purpose is to provide a kind of drying means and system thereof of chip stack structure, it can drying crystal wafer effectively, particularly contribute to the minim gap in the chip stack structure of dry three-dimensional, perpendicular interconnection, thus follow-up process yields can be improved.
For achieving the above object, the present invention adopts following technical scheme: a kind of drying means of chip stack structure, comprises the following steps: first, provides the chip stack structure after washed with de-ionized water; Then, this chip stack structure is moved in the accumulator tank loading organic solvent; Then, deionized water residual on this chip stack structure is replaced as this organic solvent; Finally, this chip stack structure is moved into vacuumize indoor, and place the scheduled time under vacuum environment.
The present invention separately provides a kind of drying system of chip stack structure, comprises wafer brush equipment, wafer washing/cleaning equipment, organic solvent accumulator tank, high frequency ultrasonic vibrating device and vacuum drying cabinet.
Wherein, this wafer brush equipment comprises at least one gas nozzle, for carrying out high-pressure jet to chip stack structure, to remove scaling powder residual on this chip stack structure; This wafer washing/cleaning equipment is connected to this wafer brush equipment and comprises at least one fluid injector, for high temperature deionized water being sprayed to equably this chip stack structure surface; This organic solvent accumulator tank is connected to this wafer washing/cleaning equipment, for this chip stack structure after washed with de-ionized water accommodating; This high frequency ultrasonic vibrating device is arranged at the below of this organic solvent accumulator tank, for carrying out concussion action to this organic solvent accumulator tank, so that deionized water residual on this chip stack structure is replaced as this organic solvent; This vacuum drying cabinet is connected to this organic solvent accumulator tank, for organic solvent residual on this chip stack structure is volatilized and taken out of.
The present invention compared with prior art has obvious advantage and beneficial effect: the step of drying means by organic solvent displacement deionized water of chip stack structure of the present invention and the step of drying under vacuum environment, except can greatly promote except integrated artistic speed, owing to not needing to carry out heating action to organic solvent accumulator tank, therefore also can avoid organic solvent accumulator tank because instantaneous temperature is too high, cause the moment concentration of organic solvent steam excessive and blast.
Other objects of the present invention and advantage can be further understood from technical characteristic disclosed in this invention.In order to above and other object of the present invention, feature and advantage can be become apparent, special embodiment below also coordinates accompanying drawing to be described in detail below.
Accompanying drawing explanation
Fig. 1 is the cutaway view of chip stack structure of the present invention.
Fig. 2 is the flow chart of the drying means of the chip stack structure of the first embodiment of the present invention.
Fig. 3 is the calcspar of the drying system of the chip stack structure of the first embodiment of the present invention.
Fig. 4 is the process schematic representation that the deionized water of the first embodiment of the present invention removes step.
Fig. 5 is the process schematic representation that the deionized water of the second embodiment of the present invention removes step.
Wherein, description of reference numerals is as follows:
Embodiment
Please refer to Fig. 1, the disclosure mainly provides a kind of drying means and system thereof of chip stack structure, and it is suitable for dry three-dimensional (three-dimensional; 3-D), the chip stack structure W of perpendicular interconnection, described chip stack structure W has multiple minim gap G(micro gap between chip C and substrate S usually), drying means of the present disclosure and system are for residuing in these minim gaps G(about 20 ~ 30 μm) in organic solvent more can play excellent drying effect.
［ the first embodiment ］
Please refer to Fig. 2, it is the schematic flow sheet of the drying means of the chip stack structure of first embodiment of the invention.The method of the present embodiment at least comprises scaling powder removal step S12, high temperature washed with de-ionized water step S14, deionized water removes step S16 and vacuum drying step S18.Below, the schematic diagram of the drying system coordinating the stacked structure shown in Fig. 3 is described in detail the particular content of each step, those skilled in the art can understand advantage of the present invention and effect easily by content of the present disclosure, and under not departing from spirit of the present invention, carry out various modification and change, to implement or to apply method of the present invention.
First, perform step S12, take with the steam of water or solvent the scaling powder (flux) residuing in chip stack structure W out of.In the present embodiment, first by mechanical arm, chip stack structure W is moved in wafer brush equipment 10 from bogey (figure does not show), then utilize the bonding station of gas nozzle 11 couples of chip C and substrate S to carry out high-pressure jet, with steam scaling powder dissolved and take the minim gap G of chip C and substrate S out of; What deserves to be explained is, vapour molecule is Small molecular, and it can readily pass through described minim gap G, contributes to taking residual scaling powder out of.So the foregoing is only a kind of embodiments possible of the present invention, the present invention is non-as limit.
Then, perform step S14, high temperature deionized water (hot DI water) is sprayed on said chip stacked structure W equably.In the present embodiment, by mechanical arm, chip stack structure W is moved in wafer washing/cleaning equipment 20 from bogey, then utilize fluid injector 21 that high temperature deionized water is directly sprayed to chip stack structure W surface, so that remove particulate, simultaneously can organics removal and metal pollutant.Similarly, the foregoing is only a kind of embodiments possible of the present invention, the present invention is non-as limit.
Afterwards, perform step S16, carry out concussion program, in order to deionized water residual on said chip stacked structure W is replaced as organic solvent.As shown in Figure 4, specifically, chip stack structure W is transported to above organic solvent accumulator tank 30 via conveying trolley (figure does not show), and utilize power set (figure does not show) manipulation bogey to drop in organic solvent accumulator tank 30, be infiltrated on organic solvent 31 to make chip stack structure W; Then the present invention bestows concussion action to organic solvent accumulator tank 30 further.
In the present embodiment, described concussion action utilizes the ultrasonic vibrating being placed on the ultrasonic energy 40 bottom organic solvent accumulator tank 30 and applying, and be preferably high frequency ultrasonic vibrating (> 20MHz), the concussion time, about between 1 to 30 minute, can replace the deionized water that on chip stack structure, W is residual completely.
What deserves to be explained is, the organic solvent 31 used in the present embodiment must dissolve each other with water; In present pre-ferred embodiments, described organic solvent is selected from methyl alcohol, ethanol, isopropyl alcohol (IPA) or acetone (acetone), is again wherein the best with acetone.Principle is, the saturated vapour pressure of acetone is 174mmHg(20 DEG C), be greater than the saturated vapour pressure (for 160mmHg(30 DEG C) of methyl alcohol), the saturated vapour pressure (for 44.3mmHg(30 DEG C) of ethanol) and the saturated vapour pressure (for 33mmHg(28 DEG C) of isopropyl alcohol), contribute to follow-up drying steps; And experimentally result, acetone can take away deionized water in concussion in 5 minutes completely.
In addition, this step is except can promoting integrated artistic speed, owing to not needing to carry out heating action to organic solvent accumulator tank 30, therefore also can avoid organic solvent accumulator tank 30 because instantaneous temperature is too high, cause the moment concentration of organic solvent steam excessive and blast.
Finally, perform step S16, said chip stacked structure W is moved in vacuum drying cabinet 50, and place the scheduled time under vacuum environment.Specifically, by mechanical arm, chip stack structure W is moved in vacuum drying cabinet 50 from bogey, then place 1 ~ 5 minute organic solvent to be remained and volatilize namely complete the drying process of the present embodiment completely; In present pre-ferred embodiments, described vacuum environment refers to described vacuum drying cabinet 50 to be evacuated to vacuum degree at more than-80Kpa, with the air pressure that controls environment at below 160mmHg, thus, acetone only need place vaporization of can directly seething with excitement for 1 ~ 2 minute at normal temperatures, and this further promotes integrated artistic speed.So the foregoing is only a kind of preferred forms of the present invention, the present invention is non-as limit.
［ the second embodiment ］
Please refer to Fig. 5, it is the process schematic representation that the deionized water of second embodiment of the invention removes step, and please coordinate with reference to figure 2.The Main Differences of the present embodiment and previous embodiment is, the deionized water of the present embodiment removes the mode that step S16 adopts water proof concussion.
Specifically, organic solvent accumulator tank 30 carries out high frequency ultrasonic vibrating in water bath environment; In other words, organic solvent accumulator tank 30 is first placed in water bath 60 by the present embodiment, then carry out high frequency ultrasonic vibrating with ultrasonic energy 40 pairs of water baths 60, carried out the displacement of organic solvent 31 and deionized water on control chip stacked structure W by the oscillation degree of ripples.What deserves to be explained is further, this kind of mode also can avoid organic solvent accumulator tank 30 to blast because instantaneous temperature is too high.
Please answer reference diagram 3, in order to complete in the drying means of said chip stacked structure institute in steps, the present invention also provides a kind of drying system of chip stack structure, and it comprises wafer brush equipment 10, wafer washing/cleaning equipment 20, organic solvent accumulator tank 30, high frequency ultrasonic vibrating device 40 and vacuum drying cabinet 50.
Wherein, wafer brush equipment 10 comprises at least one gas nozzle 11, for carrying out high-pressure jet to chip stack structure W, to remove scaling powder residual on chip stack structure W; Wafer washing/cleaning equipment 20 is connected to wafer brush equipment 10 and comprises at least one fluid injector 21, for high temperature deionized water is sprayed to chip stack structure W surface equably; Organic solvent accumulator tank 30 is connected to wafer washing/cleaning equipment 20, for accommodating chip stack structure W after washed with de-ionized water; High frequency ultrasonic vibrating device 40 is arranged at the below of organic solvent accumulator tank 30, for carrying out concussion action to organic solvent accumulator tank 30, so that deionized water residual on chip stack structure W is replaced as this organic solvent; Vacuum drying cabinet 50 is connected to organic solvent accumulator tank 30, for organic solvent residual on chip stack structure W is volatilized and taken out of.
In present pre-ferred embodiments, described drying system more comprises water bath 60, and organic solvent accumulator tank 30 part is placed in water bath 60, and 40, high frequency ultrasonic vibrating device is fixedly arranged on bottom water bath 60.
In sum, compared to existing drying means and device, the present invention at least has following advantage:
1. the drying means of chip stack structure of the present invention can drying crystal wafer effectively, is specially adapted to organic solvent residual in the minim gap between chip and substrate, therefore can guarantees the quality of the integrated circuit component on wafer.
2. the drying means of chip stack structure of the present invention replaces the step of deionized water and step dry under vacuum environment by organic solvent, except can greatly promote except integrated artistic speed, owing to not needing to carry out heating action to organic solvent accumulator tank, therefore also can avoid organic solvent accumulator tank because instantaneous temperature is too high, cause the moment concentration of organic solvent steam excessive and blast.
3. the drying means of chip stack structure of the present invention can reduce the defect on wafer really, therefore can increase the time interval that technique board cleans maintenance, and then can increase the production capacity of technique board.
Only the foregoing is only preferred embodiment of the present invention, be not intended to limit to scope of patent protection of the present invention, therefore the equivalence change of such as using specification of the present invention and accompanying drawing content to do, be all in like manner all contained in the scope of the present invention, close and give Chen Ming.
Claims (10)
1. a drying means for chip stack structure, is characterized in that, comprises the following steps:
Chip stack structure after washed with de-ionized water is provided;
This chip stack structure is moved in the accumulator tank loading organic solvent;
Deionized water residual on this chip stack structure is replaced as this organic solvent; And
This chip stack structure is moved into vacuumize indoor, and place the scheduled time under vacuum environment.
2. the drying means of chip stack structure as claimed in claim 1, wherein before the step of the chip stack structure providing this after washed with de-ionized water, also comprise scaling powder removal step, high-pressure jet is carried out to this chip stack structure, takes with the steam of water or solvent the scaling powder remained on this chip stack structure out of.
3. the drying means of chip stack structure as claimed in claim 2, wherein this chip stack structure has the minim gap be positioned between chip and substrate, to be dissolved by the scaling powder remained in this minim gap and take out of in this scaling powder removal step with the steam of water or solvent.
4. the drying means of chip stack structure as claimed in claim 3, wherein deionized water residual on this chip stack structure is being replaced as in the step of this organic solvent, this accumulator tank carries out concussion action in water bath environment, in order to deionized water residual in this minim gap is replaced as this organic solvent.
5. the drying means of chip stack structure as claimed in claim 4, wherein this concussion action is high frequency ultrasonic vibrating.
6. the drying means of chip stack structure as claimed in claim 1, wherein this organic solvent is methyl alcohol, ethanol, isopropyl alcohol or acetone.
7. the drying means of chip stack structure as claimed in claim 1, wherein the time of this concussion program is between 1 to 30 minute.
8. the drying means of chip stack structure as claimed in claim 1, wherein this scheduled time is between 1 to 5 minute.
9. a drying system for chip stack structure, is characterized in that, comprising:
Wafer brush equipment, comprises at least one gas nozzle, for carrying out high-pressure jet to chip stack structure, to remove scaling powder residual on this chip stack structure;
Wafer washing/cleaning equipment, is connected to this wafer brush equipment and comprises at least one fluid injector, for high temperature deionized water being sprayed to equably this chip stack structure surface;
Organic solvent accumulator tank, is connected to this wafer washing/cleaning equipment, for this chip stack structure after washed with de-ionized water accommodating;
High frequency ultrasonic vibrating device, is arranged at the below of this organic solvent accumulator tank, for carrying out concussion action to this organic solvent accumulator tank, so that deionized water residual on this chip stack structure is replaced as this organic solvent; And
Vacuum drying cabinet, is connected to this organic solvent accumulator tank, for organic solvent residual on this chip stack structure is volatilized and taken out of.
10. the drying system of chip stack structure as claimed in claim 9, more comprise water bath, this organic solvent accumulator tank is placed in part in this water bath, and this high frequency ultrasonic vibrating device is connected to this water bath.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310437352.9A CN104465314A (en) | 2013-09-23 | 2013-09-23 | Method and system for drying chip stacking structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310437352.9A CN104465314A (en) | 2013-09-23 | 2013-09-23 | Method and system for drying chip stacking structure |
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| Publication Number | Publication Date |
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| CN104465314A true CN104465314A (en) | 2015-03-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310437352.9A Pending CN104465314A (en) | 2013-09-23 | 2013-09-23 | Method and system for drying chip stacking structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107170693A (en) * | 2016-03-07 | 2017-09-15 | 弘塑科技股份有限公司 | process liquid supply method and device |
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|---|---|---|---|---|
| TW588434B (en) * | 2003-04-01 | 2004-05-21 | Grand Plastic Technology Corp | Method and apparatus of wafer dryer |
| WO2005119063A1 (en) * | 2004-06-02 | 2005-12-15 | Garniman Sa | Hydraulically driven multicylinder pumping machine |
| CN1835192A (en) * | 2005-03-17 | 2006-09-20 | 郑明德 | Cleaning method of semiconductor component |
| CN102064090A (en) * | 2010-10-15 | 2011-05-18 | 北京通美晶体技术有限公司 | Method for cleaning compound semiconductor chip |
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2013
- 2013-09-23 CN CN201310437352.9A patent/CN104465314A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW588434B (en) * | 2003-04-01 | 2004-05-21 | Grand Plastic Technology Corp | Method and apparatus of wafer dryer |
| WO2005119063A1 (en) * | 2004-06-02 | 2005-12-15 | Garniman Sa | Hydraulically driven multicylinder pumping machine |
| CN1835192A (en) * | 2005-03-17 | 2006-09-20 | 郑明德 | Cleaning method of semiconductor component |
| CN102064090A (en) * | 2010-10-15 | 2011-05-18 | 北京通美晶体技术有限公司 | Method for cleaning compound semiconductor chip |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107170693A (en) * | 2016-03-07 | 2017-09-15 | 弘塑科技股份有限公司 | process liquid supply method and device |
| CN107170693B (en) * | 2016-03-07 | 2020-03-31 | 弘塑科技股份有限公司 | Process liquid supply method and apparatus |
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Application publication date: 20150325 |