CN104458103B - A kind of low-drift pressure sensor and manufacture method thereof - Google Patents
A kind of low-drift pressure sensor and manufacture method thereof Download PDFInfo
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- CN104458103B CN104458103B CN201410711006.XA CN201410711006A CN104458103B CN 104458103 B CN104458103 B CN 104458103B CN 201410711006 A CN201410711006 A CN 201410711006A CN 104458103 B CN104458103 B CN 104458103B
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Abstract
The invention discloses a kind of low-drift pressure sensor and manufacture method thereof, low-drift pressure sensor includes substrate, the first piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance, the 4th piezo-resistance, metal lead wire and PAD point, four piezo-resistances constitute Wheatstone bridge by metal lead wire, four piezo-resistances are placed on by making the thin membrane regions that back of the body chamber is formed, and four piezo-resistances are placed the most in the same direction.Its making step is: utilizes micro Process photoetching, injection technology to make concentrated boron area, Dan Peng district in substrate face, makes fairlead, metal lead wire and PAD point in substrate face；Make cavity at substrate back, thus form film layer；Scribing.Pressure sensor of the present invention can effectively reduce electric leakage, reduces the null offset of pressure sensor, and manufacture method is compatible with the processing technology of standard body silicon piezoresistance type pressure sensor, and device manufacturing process is simple, low cost, and yield rate height can be mass.
Description
Technical field
The present invention relates to a kind of microelectromechanical systems (MEMS) device and manufacture method thereof, particularly relate to one
Low-drift pressure sensor and manufacture method thereof, belong to microelectronic.
Background technology
The development of microelectromechanical systems (MEMS) opens a brand-new technical field and industry, not only may be used
To reduce the cost of Mechatronic Systems, but also the task that many large scale Mechatronic Systems can not complete can be completed.
Have just because of MEMS and system that volume is little, lightweight, low in energy consumption, low cost, reliability high, property
The advantage that the traditional sensors such as energy is excellent and powerful are incomparable, MEMS is in Aeronautics and Astronautics, automobile, life
Thing medical science, environmental monitoring, military affairs and all spectra that almost people touch suffer from the most wide should
Use prospect.
The piezoresistive characteristic of silicon materials, silica-based pressure drag type pressure sensing it is found that since mid-term the 1950's
Device is just widely used.Typical piezoresistive pressure sensor structure be by electrochemistry or selective doping respectively to
The flat film that anisotropic etch micro-processing technology is made.The micro mechanical pressure sensor that current most of batches are sold
It it is all this type.Piezo-resistance is placed on the adjacent edges of film, in its linear working range, improves one
The individual electricity output being directly proportional to diaphragm pressure.Null offset is the important indicator affecting pressure sensor performance, is subject to
To extensively paying attention to.It is now recognized that the key factor affecting drift is piezo-resistance, piezo-resistance is typically with diffusion
Or prepared by the method for ion implanting, the temperature drift of resistance is bigger.
Summary of the invention
The technology of the present invention solves problem: overcome the deficiencies in the prior art, it is provided that a kind of low drifting pressure sensing
Device and manufacture method thereof, this pressure sensor can effectively reduce electric leakage, reduces the null offset of pressure sensor；
The processing technology of this manufacture method and standard body silicon piezoresistance type pressure sensor is compatible, device manufacturing process is simple,
Low cost, and yield rate height can be mass.
The technical solution of the present invention is: a kind of low-drift pressure sensor, including substrate, the first pressure-sensitive electricity
Resistance, the second piezo-resistance, the 3rd piezo-resistance, the 4th piezo-resistance, metal lead wire and PAD point；
Substrate back has cavity, and substrate is positioned at the part above cavity and forms film layer；First piezo-resistance,
Second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance are yi word pattern structure, and set in the same direction
Put at film layer upper surface, the first piezo-resistance and the 3rd piezo-resistance, the second piezo-resistance and the 4th pressure-sensitive electricity
Hinder the Central Symmetry respectively about film layer；
First piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance by Dan Peng district,
Fairlead and two concentrated boron area compositions, connected by Dan Peng district between two concentrated boron areas, each concentrated boron area be all provided with
In respect of fairlead；Described concentrated boron area is circular or corner is the square structure of arc-shaped, and concentrated boron area is handed over Dan Peng district
The place connect is obtuse angle；
Described first piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance are by connecting
Metal lead wire between fairlead constitutes Wheatstone bridge；
Between described first piezo-resistance and the second piezo-resistance, between the second piezo-resistance and the 3rd piezo-resistance,
Between 3rd piezo-resistance and the 4th piezo-resistance, it is provided with between the 4th piezo-resistance and the first piezo-resistance
PAD point, for realizing the connection of Wheatstone bridge and external circuit.
Described substrate is N-type silicon chip.
Being shaped as of described film layer is square or circular.
The material of described metal lead wire is gold or aluminium.
The method manufacturing low-drift pressure sensor, it is characterised in that comprise the steps:
1) select one piece of N-type silicon chip as substrate；
2) utilize micro Process photoetching, injection technology to make the first piezo-resistance, second pressure-sensitive in substrate face simultaneously
Resistance, the 3rd piezo-resistance and the concentrated boron area of the 4th piezo-resistance；
3) utilize micro Process photoetching, injection technology logical between two concentrated boron areas of each piezo-resistance of substrate face
Cross high-temperature thermal annealing and activate injection ion making Dan Peng district；
4) in substrate face, fairlead is made by etching process in concentrated boron area；
5) make metal level in substrate face, corrode the most simultaneously and metal lead wire and PAD point；
6) make cavity at substrate back, make substrate above cavity form film layer, and the first piezo-resistance,
Second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance are positioned at the upper surface of film layer；
7) carry out scribing according to dicing lane, complete the making of low-drift pressure sensor.
Described step 5) in corrode on the metal layer the method for metal lead wire and be: make gold by sputtering technology
Lead-in wire, or use evaporation technology to make aluminum lead.
Described step 6) in make the technique of cavity be to use the dry etch process of reactive ion etching or employing
The wet corrosion technique of KOH solution anisotropic etch.
The present invention compared with prior art, has the advantage that
1, the low-drift pressure sensor of the present invention forms Wheatstone bridge, pressure-sensitive electricity by four piezo-resistances
The designed arc-shaped appearance of resistance and the obtuse angle connection in concentrated boron area and Dan Peng district solve the zero point introduced by resistance
Drifting problem.
2, manufacturing approach craft of the present invention is simple, mode effectively, low cost, be suitable for batch production.
Accompanying drawing explanation
Fig. 1 is the low-drift pressure sensor structural representation of the present invention, and wherein 1A and 1B is respectively top view
And profile；
Fig. 2 is the top view of single piezo-resistance；
Fig. 3 is the schematic diagram after second step manufacture completes in manufacture method of the present invention, and wherein 3A and 3B is respectively
Top view and profile；
Fig. 4 is the schematic diagram after 3rd step manufacture completes in manufacture method of the present invention, and wherein 4A and 4B is respectively
Top view and profile；
Fig. 5 is the schematic diagram after 4th step manufacture completes in manufacture method of the present invention, and wherein 5A and 5B is respectively
Top view and profile；
Fig. 6 is the schematic diagram after 5th step manufacture completes in manufacture method of the present invention, and wherein 6A and 6B is respectively
Top view and profile.
Detailed description of the invention
The problem that the present invention is directed to pressure sensor drift, proposes a kind of low-drift pressure sensor and making should
The method of pressure sensor.This sensor uses traditional membrane structure, four piezo-resistance (the first pressure-sensitive electricity
Resistance, the second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance) reasonably it is distributed in the stress collection of film
Middle district, each piezo-resistance is designed as yi word pattern piezo-resistance, and each piezo-resistance is by Dan Peng district, fairlead
With two concentrated boron area compositions, the shape of concentrated boron area uses designed arc-shaped appearance, it is to avoid right angle, and dense boron joins with light boron
Place be obtuse angle.The design of piezo-resistance effectively avoid because of the wedge angle of piezo-resistor structure make injection from
Son becomes needle-like distribution, thus electric leakage is big.The method can effectively reduce electric leakage, reduces the zero of pressure sensor
Point drift.This design processing method is compatible with the processing technology of standard body silicon piezoresistance type pressure sensor simultaneously, device
Part processing technology is simple, low cost, and yield rate height can be mass.
Low-drift pressure sensor uses pressure resistance type, and piezoresistive pressure sensor is the piezoresistive effect utilizing monocrystalline silicon
Make.Piezoresistive effect refers to that the body resistivity of material changes when material is by applied mechanical stress
Material property.The deformation energy of rupture band structure of crystal structure, thus change electron mobility and carrier density,
The resistivity or the conductance that make material change.MEMS technology is utilized to make flat film, four pressures on substrate
Quick resistance is placed on the adjacent edges of film.When there being External Force Acting, the piezo-resistance resistance on film becomes
Change, under constant-current source or constant pressure source effect, be made up of the output voltage signal of Wheatstone bridge four piezo-resistances
To change.Thus detect the external force of input.
Specifically, the low-drift pressure sensor of the present invention, including substrate the 1, first piezo-resistance 41,
Two piezo-resistance the 42, the 3rd piezo-resistance the 43, the 4th piezo-resistances 44, metal lead wire and PAD point.Fig. 1
For the low-drift pressure sensor structural representation of the present invention, wherein 1A is its top view, and 1B is it along Figure 1A
The profile of X-X ' line.
Substrate 1 back side has cavity 2, and the substrate 1 above cavity 2 forms film layer 3；First piezo-resistance
41, the second piezo-resistance the 42, the 3rd piezo-resistance 43 is (the most parallel in the same direction with the 4th piezo-resistance 44
In X-X ' line or be each perpendicular to X-X ' line) be arranged on film layer 3 upper surface, and the first piezo-resistance and the 3rd
Piezo-resistance, the second piezo-resistance and the 4th piezo-resistance are respectively about the Central Symmetry of film layer 3；
First piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance by Dan Peng district,
Fairlead and two concentrated boron area compositions, connected by Dan Peng district between two concentrated boron areas, form yi word pattern structure,
It is designed with fairlead on each concentrated boron area；Described concentrated boron area is circular or corner is the square structure of arc-shaped,
Concentrated boron area is obtuse angle with the place of Dan Peng district handing-over；
Between first piezo-resistance and the second piezo-resistance, between the second piezo-resistance and the 3rd piezo-resistance,
Between three piezo-resistances and the 4th piezo-resistance, between the 4th piezo-resistance and the first piezo-resistance, it is provided with PAD
Point.
Described first piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance are by connecting
Metal lead wire between fairlead constitutes Wheatstone bridge.
Fig. 2 is single piezo-resistance top view, and each piezo-resistance is by concentrated boron area 4, Dan Peng district 5, fairlead 6
Composition.Concentrated boron area 4 uses designed arc-shaped appearance, and the present embodiment uses corner to be the square structure of circular arc.Concentrated boron area 4
Being obtuse angle with the place of Dan Peng district 5 handing-over, fairlead is produced on concentrated boron area 4.By concentrated boron area 4a, concentrated boron area 4b,
Dan Peng district 5a, fairlead 6a, fairlead 6b form the first piezo-resistance 41；Concentrated boron area 4c, concentrated boron area 4d,
Dan Peng district 5b, fairlead 6c, fairlead 6d form the second piezo-resistance 42；Concentrated boron area 4e, concentrated boron area 4f,
Dan Peng district 5c, fairlead 6e, fairlead 6f form the 3rd piezo-resistance 43；Concentrated boron area 4g, concentrated boron area 4h,
Dan Peng district 5d, fairlead 6g, fairlead 6h form the 4th piezo-resistance 44.Metal lead wire 7a, 7b, 7c,
Four piezo-resistances are connected into Wheatstone bridge by 7d, 7e, and draw PAD point 8a, 8b, 8c, 8d, 8e.
The present invention is that the technologist in MEMS field provides a kind of low-drift pressure sensor and preparation method thereof,
It is low that the pressure sensor of this method processing has good temperature characterisitic, null offset, and reliability of technology is high.
Low-drift pressure sensor manufacture method comprises the following steps:
The first step, selects one piece of N-type silicon chip, as substrate；
Second step: utilize micro Process photoetching, injection technology substrate face make simultaneously the first piezo-resistance,
Two piezo-resistances, the 3rd piezo-resistance and the concentrated boron area of the 4th piezo-resistance；
3rd step: utilize micro Process photoetching, injection technology in two concentrated boron areas of each piezo-resistance of substrate face
Between by high-temperature thermal annealing activate inject ion make Dan Peng district；
4th step, makes fairlead in the concentrated boron area of substrate face by etching process；
5th step, makes metal level in substrate face, corrodes the most simultaneously and metal lead wire and PAD
Point, the first piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance pass through metal lead wire
Constituting Wheatstone bridge, Wheatstone bridge is connected with external circuit by PAD point；
6th step, makes cavity at substrate back, and the substrate above cavity forms film layer (strain film),
So that the first piezo-resistance, the second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance are positioned at film layer
Upper surface；
7th step, cuts into independent chip by pressure sensor disk according to dicing lane, completes low drifting pressure
The making of sensor.
In the technical program, described substrate is that N-type<100>is single throws sheet, and resistivity is 2-4 Ω .cm, thickness without
Specific requirement, can select silicon wafer thickness according to the thickness of the thickness of film and back of the body chamber etching.4th single metal lead-in wire
Preparation method be: the gold wire made by sputtering technology, or use evaporation technology make aluminum lead.The
The technique making back of the body chamber described in six steps is dry etch process or wet corrosion technique, and dry etch process can use
Reactive ion etching, wet corrosion technique can use KOH solution anisotropic etch.The shape of film layer 3 can
For square, circle or other shape being suitable for.
Using above-mentioned technique can complete the making of low-drift pressure sensor, four piezo-resistances are distributed in film
The edge of layer 3, pressure drag resistance the most transversely (X-X ' to) is placed in the present embodiment, and the first piezo-resistance
With the 3rd piezo-resistance, the second piezo-resistance and the 4th piezo-resistance respectively about the Central Symmetry of film layer 3.
When film layer 3 is by sensitive direction pressure effect, on film layer 3, four piezo-resistances are all because of suffered stress
Make resistance change, wherein relative to two resistance variations identical and contrary with two other resistance variations,
Under the effect of Wheatstone bridge, the change of resistance is converted to the change of voltage x current, according to from PAD point
The voltage of output can calculate film layer 3 pressure experienced, thus realizes the function of pressure sensor.
With reference to Fig. 3-Fig. 6, the manufacture method of the low-drift pressure sensor of the present embodiment is illustrated.
Fig. 3 show the schematic diagram after second step manufacture completes, and 3A is its top view, and 3B is that it is along Fig. 3 A's
The profile of X-X ' line: substrate 1 selects silicon base, is formed by photoetching process on the surface of substrate 1 and injects figure
Shape district, injects boron, forms concentrated boron area in graph area, corresponding two concentrated boron areas of each piezo-resistance.Wherein 4a,
4b is one group, and 4c, 4d are one group, and 4e, 4f are one group, and 4g, 4h are one group.Each concentrated boron area is corner
Square structure for circular arc.
Fig. 4 show the schematic diagram after the 3rd step manufacture completes, and 4A is its top view, and 4B is that it is along Fig. 4 A's
The profile of X-X ' line: formed by photoetching process on the surface of substrate 1 and inject graph area, inject in graph area
Boron, forms Dan Peng district, and there is handover region Dan Peng district and concentrated boron area, and the place that concentrated boron area and Dan Peng district join is blunt
Angle.The resistance of piezo-resistance is determined by Dan Peng district.Dan Peng district 5a is formed at concentrated boron area 4a, in the middle of 4b, and light boron
District 5b is formed at concentrated boron area 4c, and in the middle of 4d, Dan Peng district 5c is formed at concentrated boron area 4e, in the middle of 4f, and Dan Peng district
5d is formed at concentrated boron area 4g, in the middle of 4h.And each piezo-resistance is yi word pattern structure.
Fig. 5 show the schematic diagram after the 4th step manufacture completes, and 5A is its top view, and 5B is that it is along Fig. 5 A's
The profile of X-X ' line: on the surface of substrate 1, concentrated boron area forms fairlead, and each resistance has two fairleads,
As it can be seen, fairlead 6a is formed at Nong Peng 4a district, fairlead 6b is formed at Nong Peng 4b district, fairlead 6a
It it is one group with fairlead 6b；Fairlead 6c is formed at Nong Peng 4c district, and fairlead 6d is formed at Nong Peng 4d district,
Fairlead 6c and fairlead 6d is one group；Fairlead 6e is formed at Nong Peng 4e district, and fairlead 6f is formed at dense
Boron 4f district, fairlead 6e and fairlead 6f are one group；Fairlead 6g is formed at Nong Peng 4g district, fairlead
It is one group that 6h is formed at Nong Peng 4h district, fairlead 6g and fairlead 6h.
Fig. 6 show the schematic diagram after the 5th step manufacture completes, and 6A is its top view, and 6B is that it is along Fig. 6 A's
The profile of X-X ' line: at the surface evaporation aluminium of substrate 1, form graph area by photoetching process, corrode aluminium shape
Become metal lead wire and PAD point (gold wire can also be made by sputtering technology to realize).As shown in Figure 6, aluminium draws
Line 7a is drawn by fairlead 6a, and connects PAD point 8a；Aluminum lead 7b passes through fairlead 6b and fairlead
6c draws, and connects the two ends of PAD point 8b, i.e. aluminum lead 7b two resistance of connection；Aluminum lead 7c is by drawing
String holes 6d and fairlead 6f draw, and connect the two ends of PAD point 8c, i.e. aluminum lead 7c two resistance of connection；
Aluminum lead 7d is drawn by fairlead 6e and fairlead 6h, and connects PAD point 8d, i.e. aluminum lead 7c connection
The two ends of two resistance；Aluminum lead 7e is drawn by fairlead 6g, and connects PAD point 8e.Aluminum lead is by four
Individual piezo-resistance connects, and forms Wheatstone bridge, pressure sensor sensing ambient pressure, piezo-resistance resistance
Change, by detecting the output detections sensor pressure experienced of Wheatstone bridge.
Finishing operation forms final pressure sensor, as shown in Figure 1.Work is performed etching at the back side of substrate 1
Skill, forms cavity 2 and film 3.
Describe feature structure and the manufacturer of a kind of low-drift pressure sensor of micromachined the most in detail
Method, those skilled in the art can carry out local directed complete set and amendment on this basis, be not difficult to repeat this
Bright result, but this can't be beyond the protection domain of the claims in the present invention.
The content not being described in detail in description of the invention belongs to the known technology of professional and technical personnel in the field.
Claims (7)
1. a low-drift pressure sensor, it is characterised in that: include substrate (1), the first piezo-resistance (41),
Second piezo-resistance (42), the 3rd piezo-resistance (43), the 4th piezo-resistance (44), metal lead wire and PAD
Point；
Substrate (1) back side has cavity (2), and substrate (1) is positioned at the part of cavity (2) top and forms film
Layer (3)；First piezo-resistance (41), the second piezo-resistance (42), the 3rd piezo-resistance (43) and the 4th
Piezo-resistance (44) is yi word pattern structure, and is arranged on film layer (3) upper surface in the same direction, and first
Piezo-resistance (41) and the 3rd piezo-resistance (43), the second piezo-resistance (42) and the 4th piezo-resistance (44)
Central Symmetry respectively about film layer (3)；
First piezo-resistance (41), the second piezo-resistance (42), the 3rd piezo-resistance (43) and the 4th are pressure-sensitive
Resistance (44) is by Dan Peng district, fairlead and two concentrated boron area compositions, by Dan Peng district between two concentrated boron areas
Connect, each concentrated boron area is designed with fairlead；Described concentrated boron area is circular or corner is the square of arc-shaped
Structure, concentrated boron area is obtuse angle with the place of Dan Peng district handing-over；
Described first piezo-resistance (41), the second piezo-resistance (42), the 3rd piezo-resistance (43) and the 4th
Piezo-resistance (44) constitutes Wheatstone bridge by the metal lead wire being connected between fairlead；
Between described first piezo-resistance (41) and the second piezo-resistance (42), the second piezo-resistance (42)
And the 3rd between piezo-resistance (43), between the 3rd piezo-resistance (43) and the 4th piezo-resistance (44),
It is provided with PAD point between 4th piezo-resistance (44) and the first piezo-resistance (41), is used for realizing favour stone
Electric bridge and the connection of external circuit.
Low-drift pressure sensor the most according to claim 1, it is characterised in that: described substrate (1)
For N-type silicon chip.
Low-drift pressure sensor the most according to claim 1, it is characterised in that: described film layer (3)
Be shaped as square or circular.
Low-drift pressure sensor the most according to claim 1, it is characterised in that: described metal lead wire
Material is gold or aluminium.
5. the method for the low-drift pressure sensor described in manufacturing claims 1, it is characterised in that include walking as follows
Rapid:
1) select one piece of N-type silicon chip as substrate；
2) utilize micro Process photoetching, injection technology to make the first piezo-resistance, second pressure-sensitive in substrate face simultaneously
Resistance, the 3rd piezo-resistance and the concentrated boron area of the 4th piezo-resistance；
3) utilize micro Process photoetching, injection technology logical between two concentrated boron areas of each piezo-resistance of substrate face
Cross high-temperature thermal annealing and activate injection ion making Dan Peng district；
3) in substrate face, fairlead is made by etching process in concentrated boron area；
4) make metal level in substrate face, corrode the most simultaneously and metal lead wire and PAD point；
5) make cavity at substrate back, make substrate above cavity form film layer, and the first piezo-resistance,
Second piezo-resistance, the 3rd piezo-resistance and the 4th piezo-resistance are positioned at the upper surface of film layer；
6) carry out scribing according to dicing lane, complete the making of low-drift pressure sensor.
The method of manufacture low-drift pressure sensor the most according to claim 5, it is characterised in that: described
Step 4) in corrode on the metal layer the method for metal lead wire and be: make gold wire by sputtering technology, or
Evaporation technology is used to make aluminum lead.
The method of manufacture low-drift pressure sensor the most according to claim 5, it is characterised in that: described
Step 5) in make cavity technique be use reactive ion etching dry etch process or use KOH solution
The wet corrosion technique of anisotropic etch.
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| US4203128A (en) * | 1976-11-08 | 1980-05-13 | Wisconsin Alumni Research Foundation | Electrostatically deformable thin silicon membranes |
| US5174926A (en) * | 1988-04-07 | 1992-12-29 | Sahagen Armen N | Compositions for piezoresistive and superconductive application |
| CN1193218C (en) * | 2003-02-28 | 2005-03-16 | 北京大学 | NEMS piezoresistive pressure sensor chip and its making process |
| US7216547B1 (en) * | 2006-01-06 | 2007-05-15 | Honeywell International Inc. | Pressure sensor with silicon frit bonded cap |
| CN201527322U (en) * | 2009-08-11 | 2010-07-14 | 襄樊美瑞汽车传感器有限公司 | Pressure sensor |
| CN102455233A (en) * | 2010-10-18 | 2012-05-16 | 上海复莱信息技术有限公司 | SOI (Silicon on Insulator) chip-based pressure sensor |
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