CN104458103A - Low drifting pressure sensor and manufacturing method thereof - Google Patents
Low drifting pressure sensor and manufacturing method thereof Download PDFInfo
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- CN104458103A CN104458103A CN201410711006.XA CN201410711006A CN104458103A CN 104458103 A CN104458103 A CN 104458103A CN 201410711006 A CN201410711006 A CN 201410711006A CN 104458103 A CN104458103 A CN 104458103A
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Abstract
The invention discloses a low drifting pressure sensor and a manufacturing method thereof. The low drifting pressure sensor comprises a substrate, a first piezoresistor, a second piezoresistor, a third piezoresistor, a fourth piezoresistor, a metal lead and PAD points. The four piezoresistors form a Wheatstone bridge through the metal lead and are placed at a thin film area formed by manufacturing a back cavity in the same direction. The manufacturing method comprises the manufacturing steps of manufacturing a thick boron area and a thin boron area on the front face of the substrate through the micromachining photoetching and injection process, manufacturing lead holes, the metal lead and the PAD points on the front face of the substrate, manufacturing the cavity in the back face of the substrate to form a thin film layer, and scribing. The pressure sensor can effectively reduce electric leakage, zero drift of the pressure sensor can be lowered, the manufacturing method is compatible with the machining process of a standard body silicon piezoresistive type pressure sensor, the device machining process is simple and low in cost, the rate of finished products is high, and batch production can be realized.
Description
Technical field
The present invention relates to a kind of microelectromechanical systems (MEMS) device and manufacture method thereof, particularly relate to a kind of low-drift pressure sensor and manufacture method thereof, belong to microelectronic.
Background technology
The development of microelectromechanical systems (MEMS) opens a brand-new technical field and industry, not only can reduce the cost of Mechatronic Systems, but also can complete the task that many large scale Mechatronic Systems can not complete.Have that volume is little, lightweight, low in energy consumption, cost is low, reliability is high just because of MEMS and system, excellent performance and the incomparable advantage of the traditional sensors such as powerful, MEMS has very wide application prospect in Aeronautics and Astronautics, automobile, biomedicine, environmental monitoring, military affairs and all spectra that almost people touch.
Found the piezoresistive characteristic of silicon materials since mid-term the 1950's, silica-based piezoresistive pressure sensor is just widely used.Typical piezoresistive pressure sensor structure is the flat film be made up of galvanochemistry or selective doping anisotropic etch micro-processing technology.The micro mechanical pressure sensor that current most of batch is sold is all this type.Voltage dependent resistor (VDR) is placed on the adjacent edges of film, in its linear working range, improves an electricity be directly proportional to diaphragm pressure and exports.Zero point drift is the important indicator affecting pressure transducer performance, in widespread attention.Think that the key factor affecting drift is voltage dependent resistor (VDR) at present, voltage dependent resistor (VDR) is generally prepared by the method for diffusion or ion implantation, and the temperature drift of resistance is larger.
Summary of the invention
Technology of the present invention is dealt with problems and is: overcome the deficiencies in the prior art, provides a kind of low-drift pressure sensor and manufacture method thereof, and this pressure transducer can effectively reduce electric leakage, reduces the zero point drift of pressure transducer; The processing technology of this manufacture method and standard body silicon piezoresistance type pressure sensor is compatible, and device manufacturing process is simple, cost is low, and yield rate is high can be mass.
Technical solution of the present invention is: a kind of low-drift pressure sensor, comprises substrate, the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR), the 4th voltage dependent resistor (VDR), metal lead wire and PAD point;
Substrate back has cavity, and the part that substrate is positioned at above cavity forms thin layer; First voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are yi word pattern structure, and being arranged on thin layer upper surface in the same direction, the first voltage dependent resistor (VDR) and the 3rd voltage dependent resistor (VDR), the second voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are respectively about the Central Symmetry of thin layer;
First voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR), by Dan Peng district, fairlead and two concentrated boron area compositions, are connected by Dan Peng district between two concentrated boron areas, each concentrated boron area are all designed with fairlead; Described concentrated boron area is circular or corner is the square structure of arc-shaped, and the place that concentrated boron area and Dan Peng district join is obtuse angle;
Described first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) form Wheatstone bridge by the metal lead wire be connected between fairlead;
PAD point is provided with, for realizing the connection of Wheatstone bridge and external circuit between described first voltage dependent resistor (VDR) and the second voltage dependent resistor (VDR), between the second voltage dependent resistor (VDR) and the 3rd voltage dependent resistor (VDR), between the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR), between the 4th voltage dependent resistor (VDR) and the first voltage dependent resistor (VDR).
Described substrate is N-type silicon chip.
The shape of described thin layer is square or circular.
The material of described metal lead wire is gold or aluminium.
Manufacture the method for low-drift pressure sensor, it is characterized in that comprising the steps:
1) select one piece of N-type silicon chip as substrate;
2) utilize micro Process photoetching, injection technology to make the concentrated boron area of the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) in substrate face simultaneously;
3) utilize micro Process photoetching, injection technology to be activated by high-temperature thermal annealing between two concentrated boron areas of each voltage dependent resistor (VDR) of substrate face and inject ion making Dan Peng district;
4) in substrate face, fairlead is made by etching process in concentrated boron area;
5) make metal level in substrate face, erode away metal lead wire and PAD point on the metal layer simultaneously;
6) make cavity at substrate back, make the substrate above cavity form thin layer, and the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are positioned at the upper surface of thin layer;
7) carry out scribing according to dicing lane, complete the making of low-drift pressure sensor.
Described step 5) in erode away metal lead wire on the metal layer method be: make gold wire by sputtering technology, or adopt evaporation technology to make aluminum lead.
Described step 6) in make the technique of cavity be adopt the dry etch process of reactive ion etching or adopt the wet corrosion technique of KOH solution anisotropic etch.
Compared with prior art, tool has the following advantages in the present invention:
1, low-drift pressure sensor of the present invention forms Wheatstone bridge by four voltage dependent resistor (VDR)s, and the designed arc-shaped appearance of voltage dependent resistor (VDR) and concentrated boron area are connected with the obtuse angle in Dan Peng district the Zero drift in main amplifier solving and introduced by resistance.
2, manufacturing approach craft of the present invention is simple, mode is effective, cost is low, be applicable to batch production.
Accompanying drawing explanation
Fig. 1 is low-drift pressure sensor structural representation of the present invention, and wherein 1A and 1B is respectively vertical view and sectional view;
Fig. 2 is the vertical view of single voltage dependent resistor (VDR);
Fig. 3 be in manufacture method of the present invention second step manufacture complete after schematic diagram, wherein 3A and 3B is respectively vertical view and sectional view;
Fig. 4 be in manufacture method of the present invention 3rd step manufacture complete after schematic diagram, wherein 4A and 4B is respectively vertical view and sectional view;
Fig. 5 be in manufacture method of the present invention 4th step manufacture complete after schematic diagram, wherein 5A and 5B is respectively vertical view and sectional view;
Fig. 6 be in manufacture method of the present invention 5th step manufacture complete after schematic diagram, wherein 6A and 6B is respectively vertical view and sectional view.
Embodiment
The present invention is directed to the problem of pressure transducer drift, propose a kind of low-drift pressure sensor and make the method for this pressure transducer.This sensor adopts traditional membrane structure, four voltage dependent resistor (VDR)s (the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR)) are reasonably distributed in the area of stress concentration of film, each voltage dependent resistor (VDR) is designed to yi word pattern voltage dependent resistor (VDR), each voltage dependent resistor (VDR) is by Dan Peng district, fairlead and two concentrated boron area compositions, the shape of concentrated boron area adopts designed arc-shaped appearance, avoid right angle, and the place that dense boron and light boron join is obtuse angle.The wedge angle that the design of voltage dependent resistor (VDR) effectively avoids because of voltage dependent resistor (VDR) structure makes the ion of injection become needle-like to distribute, thus electric leakage is large.The method effectively can reduce electric leakage, reduces the zero point drift of pressure transducer.The processing technology of this design job operation and standard body silicon piezoresistance type pressure sensor is compatible simultaneously, and device manufacturing process is simple, cost is low, and yield rate is high can be mass.
Low-drift pressure sensor adopts pressure resistance type, and piezoresistive pressure sensor utilizes the piezoresistive effect of monocrystalline silicon to make.Piezoresistive effect refers to when material is subject to applied mechanical stress, the material property that the body resistivity of material changes.The deformation energy of rupture band structure of crystal structure, thus change electron mobility and carrier density, the resistivity of material or conductance are changed.Utilize MEMS technology to make flat film on substrate, four voltage dependent resistor (VDR)s are placed on the adjacent edges of film.When there being External Force Acting, the voltage dependent resistor (VDR) resistance on film changes, and under constant current source or constant pressure source effect, the output voltage signal being made up of Wheatstone bridge four voltage dependent resistor (VDR)s will change.Thus detect the external force of input.
Specifically, low-drift pressure sensor of the present invention, comprises substrate 1, first voltage dependent resistor (VDR) 41, second voltage dependent resistor (VDR) 42, the 3rd voltage dependent resistor (VDR) 43, the 4th voltage dependent resistor (VDR) 44, metal lead wire and PAD point.Fig. 1 is low-drift pressure sensor structural representation of the present invention, and wherein 1A is its vertical view, and 1B is its sectional view along the X-X ' line of Figure 1A.
Substrate 1 back side has cavity 2, and the substrate 1 above cavity 2 forms thin layer 3; First voltage dependent resistor (VDR) 41, second voltage dependent resistor (VDR) 42, the 3rd voltage dependent resistor (VDR) 43 and the 4th voltage dependent resistor (VDR) 44 in the same direction (be all parallel to X-X ' line or all perpendicular to X-X ' line) be arranged on thin layer 3 upper surface, and the first voltage dependent resistor (VDR) and the 3rd voltage dependent resistor (VDR), the second voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are respectively about the Central Symmetry of thin layer 3;
First voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are by Dan Peng district, fairlead and two concentrated boron area compositions, connected by Dan Peng district between two concentrated boron areas, form yi word pattern structure, each concentrated boron area is all designed with fairlead; Described concentrated boron area is circular or corner is the square structure of arc-shaped, and the place that concentrated boron area and Dan Peng district join is obtuse angle;
PAD point is provided with between first voltage dependent resistor (VDR) and the second voltage dependent resistor (VDR), between the second voltage dependent resistor (VDR) and the 3rd voltage dependent resistor (VDR), between the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR), between the 4th voltage dependent resistor (VDR) and the first voltage dependent resistor (VDR).
Described first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) form Wheatstone bridge by the metal lead wire be connected between fairlead.
Fig. 2 is single voltage dependent resistor (VDR) vertical view, and each voltage dependent resistor (VDR) is made up of concentrated boron area 4, Dan Peng district 5, fairlead 6.Concentrated boron area 4 adopts designed arc-shaped appearance, and the present embodiment adopts corner to be the square structure of circular arc.The place that concentrated boron area 4 and Dan Peng district 5 join is obtuse angle, and fairlead is produced on concentrated boron area 4.The first voltage dependent resistor (VDR) 41 is formed by concentrated boron area 4a, 4b, Dan Peng district, concentrated boron area 5a, fairlead 6a, fairlead 6b; Concentrated boron area 4c, 4d, Dan Peng district, concentrated boron area 5b, fairlead 6c, fairlead 6d form the second voltage dependent resistor (VDR) 42; Concentrated boron area 4e, 4f, Dan Peng district, concentrated boron area 5c, fairlead 6e, fairlead 6f form the 3rd voltage dependent resistor (VDR) 43; Concentrated boron area 4g, 4h, Dan Peng district, concentrated boron area 5d, fairlead 6g, fairlead 6h form the 4th voltage dependent resistor (VDR) 44.Four voltage dependent resistor (VDR)s are connected into Wheatstone bridge by metal lead wire 7a, 7b, 7c, 7d, 7e, and draw PAD point 8a, 8b, 8c, 8d, 8e.
The present invention is that the technologist in MEMS field provides a kind of low-drift pressure sensor and preparation method thereof, the processing of this method pressure transducer has good temperature characterisitic, zero point drift is low, and reliability of technology is high.
Low-drift pressure sensor manufacture method comprises the following steps:
The first step, selects one piece of N-type silicon chip, as substrate;
Second step: utilize micro Process photoetching, injection technology simultaneously to make the concentrated boron area of the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) in substrate face;
3rd step: utilize micro Process photoetching, injection technology to be activated by high-temperature thermal annealing between two concentrated boron areas of each voltage dependent resistor (VDR) of substrate face and inject ion making Dan Peng district;
4th step, makes fairlead in the concentrated boron area of substrate face by etching process;
5th step, metal level is made in substrate face, erode away metal lead wire and PAD point on the metal layer simultaneously, first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) form Wheatstone bridge by metal lead wire, and Wheatstone bridge is connected with external circuit by PAD point;
6th step, makes cavity at substrate back, and the substrate above cavity forms thin layer (strain film), thus makes the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) be positioned at the upper surface of thin layer;
7th step, cuts into independently chip by pressure transducer disk according to dicing lane, completes the making of low-drift pressure sensor.
In the technical program, to be that N-type <100> is mono-throw sheet to described substrate, and resistivity is 2-4 Ω .cm, and thickness, without specific requirement, can select silicon wafer thickness according to the thickness of the thickness of film and back of the body chamber etching.The method for making of the 4th single metal lead-in wire is: the gold wire made by sputtering technology, or the aluminum lead adopting evaporation technology to make.The technique making back of the body chamber described in 6th step is dry etch process or wet corrosion technique, and dry etch process can adopt reactive ion etching, and wet corrosion technique can adopt KOH solution anisotropic etch.The shape of thin layer 3 can be square, circle or other shape be applicable to.
Adopt above-mentioned technique can complete the making of low-drift pressure sensor, four voltage dependent resistor (VDR)s are distributed in the edge of thin layer 3, in the present embodiment pressure drag resistance all transversely (X-X ' to) place, and the first voltage dependent resistor (VDR) and the 3rd voltage dependent resistor (VDR), the second voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are respectively about the Central Symmetry of thin layer 3.When thin layer 3 is subject to the effect of sensitive direction pressure, on thin layer 3, four voltage dependent resistor (VDR)s all make resistance change because of suffered stress, two wherein relative resistance variations are identical, and it is contrary with other two resistance variations, under the effect of Wheatstone bridge, the change of resistance is converted to the change of electric current and voltage, can calculate the pressure that thin layer 3 is subject to, thus realize the function of pressure transducer according to the voltage exported from PAD point.
With reference to Fig. 3-Fig. 6, the manufacture method of the low-drift pressure sensor of the present embodiment is described.
Figure 3 shows that second step manufacture complete after schematic diagram, 3A is its vertical view, 3B is its sectional view along the X-X ' line of Fig. 3 A: substrate 1 selects silicon base, formed by photoetching process on the surface of substrate 1 and inject graph area, boron is injected in graph area, form concentrated boron area, corresponding two concentrated boron areas of each voltage dependent resistor (VDR).Wherein 4a, 4b are one group, and 4c, 4d are one group, and 4e, 4f are one group, and 4g, 4h are one group.The square structure of to be corner be in each concentrated boron area circular arc.
Figure 4 shows that the 3rd step manufacture complete after schematic diagram, 4A is its vertical view, 4B is its sectional view along the X-X ' line of Fig. 4 A: formed by photoetching process on the surface of substrate 1 and inject graph area, boron is injected in graph area, form Dan Peng district, there is handover region Dan Peng district and concentrated boron area, and the place that concentrated boron area and Dan Peng district join is obtuse angle.The resistance of voltage dependent resistor (VDR) is determined by Dan Peng district.Dan Peng district 5a is formed in concentrated boron area 4a, and in the middle of 4b, Dan Peng district 5b is formed in concentrated boron area 4c, and in the middle of 4d, Dan Peng district 5c is formed in concentrated boron area 4e, and in the middle of 4f, Dan Peng district 5d is formed in concentrated boron area 4g, in the middle of 4h.And each voltage dependent resistor (VDR) is yi word pattern structure.
Figure 5 shows that the 4th step manufacture complete after schematic diagram, 5A is its vertical view, 5B is its sectional view along the X-X ' line of Fig. 5 A: on the surface of substrate 1, concentrated boron area forms fairlead, each resistance has two fairleads, and as shown in the figure, fairlead 6a is formed in Nong Peng 4a district, fairlead 6b is formed in Nong Peng 4b district, and fairlead 6a and fairlead 6b is one group; Fairlead 6c is formed in Nong Peng 4c district, and fairlead 6d is formed in Nong Peng 4d district, and fairlead 6c and fairlead 6d is one group; Fairlead 6e is formed in Nong Peng 4e district, and fairlead 6f is formed in Nong Peng 4f district, and fairlead 6e and fairlead 6f is one group; Fairlead 6g is formed in Nong Peng 4g district, and fairlead 6h is formed in Nong Peng 4h district, and fairlead 6g and fairlead 6h is one group.
Figure 6 shows that the 5th step manufacture complete after schematic diagram, 6A is its vertical view, 6B is its sectional view along the X-X ' line of Fig. 6 A: at the surface evaporation aluminium of substrate 1, form graph area by photoetching process, corrosion aluminium forms metal lead wire and PAD point (also can make gold wire by sputtering technology to realize).As shown in Figure 6, aluminum lead 7a is drawn by fairlead 6a, and connects PAD point 8a; Aluminum lead 7b is drawn by fairlead 6b and fairlead 6c, and connects PAD point 8b, and namely aluminum lead 7b connects the two ends of two resistance; Aluminum lead 7c is drawn by fairlead 6d and fairlead 6f, and connects PAD point 8c, and namely aluminum lead 7c connects the two ends of two resistance; Aluminum lead 7d is drawn by fairlead 6e and fairlead 6h, and connects PAD point 8d, and namely aluminum lead 7c connects the two ends of two resistance; Aluminum lead 7e is drawn by fairlead 6g, and connects PAD point 8e.Four voltage dependent resistor (VDR)s connect by aluminum lead, and form Wheatstone bridge, and pressure transducer induction ambient pressure, voltage dependent resistor (VDR) resistance changes, the pressure be subject to by the output detections sensor detecting Wheatstone bridge.
Finishing operation forms final pressure transducer, as shown in Figure 1.Carry out etching technics at the back side of substrate 1, form cavity 2 and film 3.
Feature structure and the manufacture method of a kind of low-drift pressure sensor of micromachined are described above in detail; those skilled in the art can carry out local directed complete set and amendment on this basis; be not difficult to repeat out result of the present invention, but this can't exceed the protection domain of the claims in the present invention.
The content be not described in detail in instructions of the present invention belongs to the known technology of professional and technical personnel in the field.
Claims (7)
1. a low-drift pressure sensor, is characterized in that: comprise substrate (1), the first voltage dependent resistor (VDR) (41), the second voltage dependent resistor (VDR) (42), the 3rd voltage dependent resistor (VDR) (43), the 4th voltage dependent resistor (VDR) (44), metal lead wire and PAD point;
Substrate (1) back side has cavity (2), and the part that substrate (1) is positioned at cavity (2) top forms thin layer (3); First voltage dependent resistor (VDR) (41), the second voltage dependent resistor (VDR) (42), the 3rd voltage dependent resistor (VDR) (43) and the 4th voltage dependent resistor (VDR) (44) are yi word pattern structure, and being arranged on thin layer (3) upper surface in the same direction, the first voltage dependent resistor (VDR) (41) and the 3rd voltage dependent resistor (VDR) (43), the second voltage dependent resistor (VDR) (42) and the 4th voltage dependent resistor (VDR) (44) are respectively about the Central Symmetry of thin layer (3);
First voltage dependent resistor (VDR) (41), the second voltage dependent resistor (VDR) (42), the 3rd voltage dependent resistor (VDR) (43) and the 4th voltage dependent resistor (VDR) (44) are by Dan Peng district, fairlead and two concentrated boron area compositions, connected by Dan Peng district between two concentrated boron areas, each concentrated boron area is all designed with fairlead; Described concentrated boron area is circular or corner is the square structure of arc-shaped, and the place that concentrated boron area and Dan Peng district join is obtuse angle;
Described first voltage dependent resistor (VDR) (41), the second voltage dependent resistor (VDR) (42), the 3rd voltage dependent resistor (VDR) (43) and the 4th voltage dependent resistor (VDR) (44) form Wheatstone bridge by the metal lead wire be connected between fairlead;
PAD point is provided with, for realizing the connection of Wheatstone bridge and external circuit between described first voltage dependent resistor (VDR) (41) and the second voltage dependent resistor (VDR) (42), between the second voltage dependent resistor (VDR) (42) and the 3rd voltage dependent resistor (VDR) (43), between the 3rd voltage dependent resistor (VDR) (43) and the 4th voltage dependent resistor (VDR) (44), between the 4th voltage dependent resistor (VDR) (44) and the first voltage dependent resistor (VDR) (41).
2. low-drift pressure sensor according to claim 1, is characterized in that: described substrate (1) is N-type silicon chip.
3. low-drift pressure sensor according to claim 1, is characterized in that: the shape of described thin layer (3) is square or circular.
4. low-drift pressure sensor according to claim 1, is characterized in that: the material of described metal lead wire is gold or aluminium.
5. the method for the low-drift pressure sensor described in manufacturing claims 1, is characterized in that comprising the steps:
1) select one piece of N-type silicon chip as substrate;
2) utilize micro Process photoetching, injection technology to make the concentrated boron area of the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) in substrate face simultaneously;
3) utilize micro Process photoetching, injection technology to be activated by high-temperature thermal annealing between two concentrated boron areas of each voltage dependent resistor (VDR) of substrate face and inject ion making Dan Peng district;
3) in substrate face, fairlead is made by etching process in concentrated boron area;
4) make metal level in substrate face, erode away metal lead wire and PAD point on the metal layer simultaneously;
5) make cavity at substrate back, make the substrate above cavity form thin layer, and the first voltage dependent resistor (VDR), the second voltage dependent resistor (VDR), the 3rd voltage dependent resistor (VDR) and the 4th voltage dependent resistor (VDR) are positioned at the upper surface of thin layer;
6) carry out scribing according to dicing lane, complete the making of low-drift pressure sensor.
6. the method for manufacture low-drift pressure sensor according to claim 5, is characterized in that: described step 4) in erode away metal lead wire on the metal layer method be: make gold wire by sputtering technology, or adopt evaporation technology to make aluminum lead.
7. the method for manufacture low-drift pressure sensor according to claim 5, is characterized in that: described step 5) in make the technique of cavity be adopt the dry etch process of reactive ion etching or adopt the wet corrosion technique of KOH solution anisotropic etch.
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Cited By (1)
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| CN106768517A (en) * | 2016-12-02 | 2017-05-31 | 北京时代民芯科技有限公司 | A kind of highly reliable high-temp pressure sensor and its manufacture method |
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