CN104426359B - A kind of boostrap circuit and Bootload of integrated junction field effect transistor - Google Patents
A kind of boostrap circuit and Bootload of integrated junction field effect transistor Download PDFInfo
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- CN104426359B CN104426359B CN201310405068.3A CN201310405068A CN104426359B CN 104426359 B CN104426359 B CN 104426359B CN 201310405068 A CN201310405068 A CN 201310405068A CN 104426359 B CN104426359 B CN 104426359B
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- transistor
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- junction field
- effect transistor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
Abstract
The present invention provides a kind of boostrap circuit and Bootload of integrated junction field effect transistor, and the boostrap circuit includes：Driving circuit, junction field effect transistor, bootstrap capacitor, flash transistor and low side transistor；First output terminal of the driving circuit is connected to the grid of the flash transistor, second output terminal be connected to low grid, the third output terminal in transistor be connected to the flash transistor grid source electrode, it is low while the drain electrode of transistor, load and bootstrap capacitor first end；The junction field effect transistor is integrated in the driving circuit, and grid is connected to the driving circuit with input logic signal, and source electrode is connected to driving power, and drain electrode is connected to the second end of the bootstrap capacitor.Junction field effect transistor is integrated in driving circuit by the present invention, can effectively reduce the component number of whole system, reduces the complexity of circuit, improves the integrated level of device.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit and its Bootload, more particularly to a kind of integrated junction field
The boostrap circuit and Bootload of transistor.
Background technology
Along with it is portable be electronic product energy-saving requirement and portable electronic product heat dissipation technical difficulty,
Efficiency requirements in increasingly higher demands, particularly voltage transfer process are proposed for power management chip therein.Its
The extensive use of middle Switching Power Supply management is exactly to have adapted to the energy-efficient requirement of this contemporary electronic consumer goods, is breached linear
The efficiency that power management can not be broken through is low and can not realize the bottleneck of boosting management.Even if the change of powder source management mode is realized
The most important promotion of a step of efficiency, and power boost management is changed using the stupid of transformer with the mode of integrated circuit
The mode of weight.
A kind of existing boostrap circuit is as shown in Figure 1, the boostrap circuit includes：Driving circuit 101, bootstrap diode 102,
Bootstrap capacitor 103, flash transistor 104 and low side transistor 105；
First output terminal of the driving circuit 101 is connected to the grid of the flash transistor 104, second output terminal connects
Be connected to the low side transistor 105 grid, third output terminal be connected to the flash transistor 104 grid source electrode, low
The first end of the drain electrode of side transistor 105, load and bootstrap capacitor 103；
The drain electrode of the flash transistor 104 connects high level, and the source electrode of the low side transistor 105 connects low level；
The input termination driving power of the bootstrap diode 102, output terminal connect the bootstrap capacitor 103.
The operation of the boostrap circuit includes：
Driving circuit 101 turns off the flash transistor 104 to the grid output low level of flash transistor 104, to
The low transistor 105 when the grid output high level of transistor 105 makes described low is opened, and driving power passes through two poles of the bootstrapping
The one-way conduction of pipe 102 charges to bootstrap capacitor 103；
Driving circuit 101 opens the flash transistor 104 to the grid output high level of flash transistor 104, to
The low transistor 105 when the grid output low level of transistor 105 makes described low turns off, the electricity that the bootstrap capacitor 103 exports
The high level that pressure and the flash transistor defeated 104 go out pools high voltage output, realizes bootstrapping；Meanwhile two poles of the bootstrapping
The high voltage for generation of booting is isolated by pipe 102 due to reversely turning off with the low voltage power supply inside driving circuit 101.
In existing half-bridge or full bridge driving circuit, boostrap circuit is essential as flash driving.Although
Above-mentioned boostrap circuit can realize the bootstrapping of circuit, still, it includes there are one bootstrap diodes, integrate in the driving circuit
Bootstrap diode is often extremely difficult, this can increase the component number of whole system, unfavorable so as to increase circuit complexity
In the raising of boostrap circuit integrated level and the raising of boostrap circuit performance.
Therefore it provides a kind of can reduce component number, the boostrap circuit for improving integrated level is necessary.
Invention content
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of integrated junction field effect transistors
The boostrap circuit and Bootload of pipe are difficult to integrate in driving circuit and lead to circuit for solving bootstrap diode in the prior art
The problems such as complicated.
In order to achieve the above objects and other related objects, the present invention provides a kind of bootstrapping of integrated junction field effect transistor
Circuit includes at least：
Driving circuit, junction field effect transistor, bootstrap capacitor, flash transistor and low side transistor；
First output terminal of the driving circuit is connected to the grid of the flash transistor, second output terminal is connected to institute
State low grid, third output terminal in transistor be connected to the flash transistor grid source electrode, it is low while transistor leakage
The first end of pole, load and bootstrap capacitor；
The drain electrode of the flash transistor connects high level, and the source electrode of the low side transistor connects low level；
The junction field effect transistor is integrated in the driving circuit, the grid connection of the junction field effect transistor
In the driving circuit with input logic signal, the source electrode of the junction field effect transistor is connected to driving power, and drain electrode connects
It is connected to the second end of the bootstrap capacitor.
A kind of preferred embodiment of the boostrap circuit of integrated junction field effect transistor as the present invention, the logical signal
Control opening and shutting off for the junction field effect transistor.
A kind of preferred embodiment of the boostrap circuit of integrated junction field effect transistor as the present invention, the flash crystal
It manages as NMOS transistor or PMOS transistor.
A kind of preferred embodiment of the boostrap circuit of integrated junction field effect transistor as the present invention, the low side crystal
It manages as NMOS transistor or PMOS transistor.
A kind of preferred embodiment of the boostrap circuit of integrated junction field effect transistor as the present invention, the work of the load
Make the supply voltage that voltage is more than the driving power.
The present invention also provides a kind of Bootload of the boostrap circuit of integrated junction field effect transistor, including step：
Driving circuit turns off the flash transistor to the grid output low level of flash transistor, to low side transistor
Grid output high level open the low side transistor, patrolled to the grid output high level of the junction field effect transistor
Collecting signal opens the junction field effect transistor, and driving power is to charging bootstrap capacitor；
Driving circuit opens the flash transistor to the grid output high level of flash transistor, to low side transistor
Grid output low level make the low side transistor shutdown, patrolled to the grid output low level of the junction field effect transistor
Collecting signal turns off the junction field effect transistor, what the voltage and the flash transistor that the bootstrap capacitor exports exported
High level pools high voltage output, realizes bootstrapping；Meanwhile the height that the shutdown of the junction field effect transistor generates bootstrapping
Voltage is isolated with the low voltage power supply inside driving circuit.
As described above, the present invention provides a kind of boostrap circuit of integrated junction field effect transistor, include at least：Driving electricity
Road, junction field effect transistor, bootstrap capacitor, flash transistor and low side transistor；First output of the driving circuit
End is connected to the grid of the flash transistor, second output terminal is connected to grid, the third output terminal of the low side transistor
It is connected to the first end of the source electrode of the grid of the flash transistor, the drain electrode of low side transistor, load and bootstrap capacitor；
The drain electrode of the flash transistor connects high level, and the source electrode of the low side transistor connects low level；The junction field effect transistor
Pipe is integrated in the driving circuit, and the grid of the junction field effect transistor is connected to the driving circuit to be believed with input logic
Number, the source electrode of the junction field effect transistor is connected to driving power, and drain electrode is connected to the second end of the bootstrap capacitor.This
Junction field effect transistor is integrated in driving circuit by invention, can effectively reduce the component number of whole system, reduces circuit
Complexity, improve the integrated level of device.The configuration of the present invention is simple, suitable for industrial production.
Description of the drawings
Fig. 1 is shown as a kind of present invention electrical block diagram of boostrap circuit of the prior art.
Fig. 2 is shown as the electrical block diagram of the boostrap circuit of the integrated junction field effect transistor of the present invention.
The step flow that Fig. 3 is shown as the Bootload of the boostrap circuit of the integrated junction field effect transistor of the present invention is shown
It is intended to.
Component label instructions
201 driving circuits
202 junction field effect transistors
203 bootstrap capacitors
204 flash transistors
205 low side transistors
206 loads
S11-S12 steps
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Please refer to Fig. 2~Fig. 3.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, package count when only display is with related component in the present invention rather than according to actual implementation in schema then
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during actual implementation, and its
Assembly layout kenel may also be increasingly complex.
As shown in Fig. 2, the present embodiment provides a kind of boostrap circuit of integrated junction field effect transistor, include at least：
Driving circuit 201, junction field effect transistor 202, bootstrap capacitor 203, flash transistor 204 and low side are brilliant
Body pipe 205；
First output terminal of the driving circuit 201 is connected to the grid of the flash transistor 204, second output terminal connects
Be connected to the low side transistor 205 grid, third output terminal be connected to the flash transistor 204 grid source electrode, low
The drain electrode of side transistor 205, the first end for loading 206 and bootstrap capacitor 203；
The drain electrode of the flash transistor 204 connects high level, and the source electrode of the low side transistor 205 connects low level；
The junction field effect transistor（JFET）202 are integrated in the driving circuit 201, the junction field effect transistor
The grid of pipe 202 is connected to the driving circuit 201 with input logic signal, the source electrode of the junction field effect transistor 202
Driving power is connected to, drain electrode is connected to the second end of the bootstrap capacitor 203.
The junction field effect transistor 202 is in the respectively diffusion one of the both sides of one block of N-type (or p-type) semi-conducting material
The p type island region (or N-type region) of a high impurity concentration forms two asymmetric PN junctions.Liang Ge P areas (or N areas) is connected in parallel,
An electrode is drawn, as grid, an electrode is respectively drawn at the both ends of N-type (or p-type) semiconductor, respectively as source electrode and leakage
Pole.The channel that the N areas (or P areas) among two PN junctions are electric currents is clipped in, then is conducting channel (abbreviation raceway groove), this structure
Pipe is known as N-channel (or P-channel) technotron.The junction field effect transistor 202 can incite somebody to action in BCD techniques
It is integrated in the driving circuit 201, so as to reduce the number of elements of whole system, reduces the complexity of circuit, improves device
The integrated level of part.
The driving circuit 201, in addition to the work(such as switch of flash transistor 204, low side transistor 205 described in conventional control
A logical signal is provided other than energy, also for the junction field effect transistor 202, for controlling the junction field effect transistor
The switch of pipe 202, i.e., described logical signal are provided by the driving circuit 201, for controlling the junction field effect transistor
202 open and shut off.
The flash transistor 204 can be NMOS transistor or PMOS transistor.In the present embodiment, the flash
Transistor 204 is NMOS transistor.Certainly, in other implementation processes, the flash transistor 204 can also use other
Switch element is replaced, and it's not limited to that.
The low side transistor 205 can be NMOS transistor or PMOS transistor.In the present embodiment, the low side
Transistor 205 is NMOS transistor.Certainly, in other implementation processes, the low side transistor 205 can also use other
Switch element is replaced, and it's not limited to that.
Since boostrap circuit generally plays a part of to improve voltage, the operating voltage of the load 206 is more than the drive
The supply voltage of dynamic power supply.
As shown in Figures 2 and 3, the present embodiment also provides a kind of bootstrapping of the boostrap circuit of integrated junction field effect transistor
Method, including step：
First, step S11 is carried out, driving circuit 201 makes the flash to the grid output low level of flash transistor 204
Transistor 204 turns off, and is opened to the low transistor 205 when the grid output high level of transistor 205 makes described low, to the knot
The grid output high level logic signal of type field-effect transistor 202 opens the junction field effect transistor 202, driving electricity
It charges to bootstrap capacitor 203 in source；
Then, step S12 is carried out, driving circuit 201 makes the flash to the grid output high level of flash transistor 204
Transistor 204 is opened, and is turned off to the low transistor 205 when the grid output low level of transistor 205 makes described low, to the knot
Type field-effect transistor 202 grid output low-level logic signal turn off the junction field effect transistor 202, it is described from
It lifts the voltage of the output of capacitance 203 and the high level of the flash transistor 204 output pools high voltage output, realize bootstrapping；
Meanwhile the shutdown of the junction field effect transistor 202 is by the low-voltage inside high voltage and the driving circuit 201 generated of booting
Power supply is isolated, and ensures the safety of driving circuit 201.
As described above, the present invention provides a kind of boostrap circuit of integrated junction field effect transistor, include at least：Driving electricity
Road 201, junction field effect transistor 202, bootstrap capacitor 203, flash transistor 204 and low side transistor 205；The drive
It is brilliant that first output terminal of dynamic circuit 201 is connected to the grid of the flash transistor 204, second output terminal is connected to the low side
Grid, the third output terminal of body pipe 205 are connected to the leakage of the source electrode, low side transistor 205 of the grid of the flash transistor 204
The first end of pole, load 206 and bootstrap capacitor 203；The drain electrode of the flash transistor 204 connects high level, and the low side is brilliant
The source electrode of body pipe 205 connects low level；The junction field effect transistor 202 is integrated in the driving circuit 201, the junction type field
The grid of effect transistor 202 is connected to the driving circuit 201 with input logic signal, the junction field effect transistor
202 source electrode is connected to driving power, and drain electrode is connected to the second end of the bootstrap capacitor 203.The present invention is by junction field
Transistor 202 is integrated in driving circuit 201, can effectively reduce the component number of whole system, reduces the complexity of circuit,
Improve the integrated level of device.The configuration of the present invention is simple, suitable for industrial production.So the present invention effectively overcomes the prior art
In various shortcoming and have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (4)
1. a kind of boostrap circuit of integrated junction field effect transistor, which is characterized in that include at least：
Driving circuit, junction field effect transistor, bootstrap capacitor, flash transistor and low side transistor；
First output terminal of the driving circuit is connected to the grid of the flash transistor, second output terminal be connected to it is described low
Grid, third output terminal in transistor be connected to the grid of the flash transistor source electrode, it is low while transistor drain, bear
The first end of load and bootstrap capacitor；
The drain electrode of the flash transistor connects high level, and the source electrode of the low side transistor connects low level；
The junction field effect transistor is integrated in the driving circuit, and the grid of the junction field effect transistor is connected to institute
Driving circuit is stated with input logic signal, the logical signal controls opening and shutting off for the junction field effect transistor, institute
The source electrode for stating junction field effect transistor is directly connected in driving power, and drain electrode is directly connected in the second of the bootstrap capacitor
End.
2. the boostrap circuit of integrated junction field effect transistor according to claim 1, it is characterised in that：The flash is brilliant
Body pipe is NMOS transistor or PMOS transistor.
3. the boostrap circuit of integrated junction field effect transistor according to claim 1, it is characterised in that：The low side is brilliant
Body pipe is NMOS transistor or PMOS transistor.
4. a kind of bootstrapping side of the boostrap circuit of integrated junction field effect transistor as described in claims 1 to 3 any one
Method, it is characterised in that：
The Bootload includes the following steps：
Driving circuit turns off the flash transistor to the grid output low level of flash transistor, to the grid of low side transistor
Pole output high level opens the low side transistor, to the grid output high level logic letter of the junction field effect transistor
Open number the junction field effect transistor, driving power is to charging bootstrap capacitor；
Driving circuit opens the flash transistor to the grid output high level of flash transistor, to the grid of low side transistor
Pole output low level makes the low side transistor shutdown, to the grid output low-level logic letter of the junction field effect transistor
Turn off number the junction field effect transistor, the voltage of the bootstrap capacitor output and the height electricity of flash transistor output
It is flat to pool high voltage output, realize bootstrapping；Meanwhile the high voltage that the shutdown of the junction field effect transistor generates bootstrapping
It is isolated with the low voltage power supply inside driving circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310405068.3A CN104426359B (en) | 2013-09-06 | 2013-09-06 | A kind of boostrap circuit and Bootload of integrated junction field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310405068.3A CN104426359B (en) | 2013-09-06 | 2013-09-06 | A kind of boostrap circuit and Bootload of integrated junction field effect transistor |
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| Publication Number | Publication Date |
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| CN104426359A CN104426359A (en) | 2015-03-18 |
| CN104426359B true CN104426359B (en) | 2018-07-06 |
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| CN201310405068.3A Active CN104426359B (en) | 2013-09-06 | 2013-09-06 | A kind of boostrap circuit and Bootload of integrated junction field effect transistor |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104820514B (en) | 2015-04-01 | 2017-05-10 | 上海中航光电子有限公司 | Touch display panel and driving method thereof |
| CN107800281A (en) * | 2017-10-27 | 2018-03-13 | 东南大学 | Boostrap circuit and drive circuit for high voltage half-bridge gate drive circuit |
| CN109194316B (en) * | 2018-08-20 | 2022-04-15 | 南京沁恒微电子股份有限公司 | Driving circuit and method of high-end grid field effect transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5666280A (en) * | 1993-05-07 | 1997-09-09 | Philips Electronics North America Corporation | High voltage integrated circuit driver for half-bridge circuit employing a jet to emulate a bootstrap diode |
| US6040732A (en) * | 1997-04-09 | 2000-03-21 | Analog Devices, Inc. | Switched-transconductance circuit within integrated T-switches |
| US6844768B2 (en) * | 2003-05-19 | 2005-01-18 | Analog Devices, Inc. | Dynamic method for limiting the reverse base-emitter voltage |
| TW200525869A (en) * | 2004-01-28 | 2005-08-01 | Renesas Tech Corp | Switching power supply and semiconductor IC |
| JP4593126B2 (en) * | 2004-02-18 | 2010-12-08 | 三菱電機株式会社 | Semiconductor device |
| EP1919082B1 (en) * | 2006-10-30 | 2009-12-02 | Infineon Technologies Austria AG | Circuit arrangement and methods for driving a high-side semiconductor switch |
| CN101312328A (en) * | 2007-05-24 | 2008-11-26 | 立锜科技股份有限公司 | Bootstrap capacitor charging circuit and driving integrated circuit using the same |
| CN101944904B (en) * | 2010-07-16 | 2012-05-23 | 昌芯(西安)集成电路科技有限责任公司 | Bootstrap automatic circuit and switching power supply comprising same |
| CN202334466U (en) * | 2011-12-09 | 2012-07-11 | 重庆电子工程职业学院 | Change-over switch circuit |
| CN102832810B (en) * | 2012-08-30 | 2015-04-08 | 成都芯源系统有限公司 | Bootstrap voltage refresh control circuit, voltage conversion circuit and related control method |
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Effective date of registration: 20210127 Address after: Room 810, 8 / F, building 1, 169 shengxia road and 1658 Zhangdong Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai, 201210 Patentee after: Shanghai ruobast Semiconductor Co.,Ltd. Address before: Room 219, 560 shengxia Road, Pudong New Area, Shanghai, 201203 Patentee before: SHANGHAI BAOXIN SOURCE POWER SEMICONDUCTOR Co.,Ltd. |
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Effective date of registration: 20230421 Address after: Room 909, 9th Floor, Building 2, No. 1298 Daqi Baoshan Road, Beilun District, Ningbo City, Zhejiang Province, 315800 Patentee after: Ningbo Baoxinyuan Power Semiconductor Co.,Ltd. Address before: Room 810, 8 / F, building 1, 169 shengxia road and 1658 Zhangdong Road, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai, 201210 Patentee before: Shanghai ruobast Semiconductor Co.,Ltd. |