CN104425707B - A kind of preparation method of magnetic storage track, equipment and magnetic storage track - Google Patents

A kind of preparation method of magnetic storage track, equipment and magnetic storage track Download PDF

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Publication number
CN104425707B
CN104425707B CN201310382143.9A CN201310382143A CN104425707B CN 104425707 B CN104425707 B CN 104425707B CN 201310382143 A CN201310382143 A CN 201310382143A CN 104425707 B CN104425707 B CN 104425707B
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China
Prior art keywords
concave shaped
shaped space
assembly
photoresist
storage track
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CN104425707A (en
Inventor
林殷茵
韦竹林
赵俊峰
杨伟
杨凯
傅雅蓉
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Fudan University
Huawei Technologies Co Ltd
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Fudan University
Huawei Technologies Co Ltd
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Priority to CN201310382143.9A priority Critical patent/CN104425707B/en
Priority to PCT/CN2014/083878 priority patent/WO2015027808A1/en
Publication of CN104425707A publication Critical patent/CN104425707A/en
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00Galvanomagnetic devices
    • H10N50/80Constructional details

Abstract

The embodiment of the invention discloses a kind of preparation method of magnetic storage track, including:H the first concave shaped spaces are etched on silicon body by etching technics, the H is the integer more than 1;One layer of magnetic material is deposited in the H the first concave shaped spaces, and silicon materials are filled up in the first concave shaped space after depositing the magnetic material, to construct the assembly of silicon and magnetic material;The exposed magnetic material in the face of assembly first is etched away or is oxidized to insulator, to obtain H U-shaped magnetic storage track, wherein, first face is the face where the opening for first concave shaped space that the assembly includes.Correspondingly, the embodiment of the present invention also provides the Preparation equipment and magnetic storage track of magnetic storage track.The embodiment of the present invention can improve the efficiency of manufacture magnetic storage track.

Description

A kind of preparation method of magnetic storage track, equipment and magnetic storage track
Technical field
The present invention relates to manufacturing field, more particularly to a kind of preparation method, equipment and the magnetic storage of magnetic storage track Track.
Background technology
Magnetic storage track is applied quite varied in electronic component device at present, is received for example, integrating in the semiconductor device Rice noodles magnetic storage track.Currently manufactured magnetic storage track mainly manufactures magnetic storage rail by reactive ion etching technology Road, but the technology can only manufacture a magnetic storage track every time, it is very low so as to manufacture the efficiency of magnetic storage track.
The content of the invention
, can be with the embodiments of the invention provide a kind of preparation method of magnetic storage track, equipment and magnetic storage track Improve the efficiency of manufacture magnetic storage track.
In a first aspect, a kind of preparation method of magnetic storage track provided in an embodiment of the present invention, including:
H the first concave shaped spaces are etched on silicon body by etching technics, the H is the integer more than 1;
One layer of magnetic material, and first after the magnetic material is deposited are deposited in the H the first concave shaped spaces Silicon materials are filled up in concave shaped space, to construct the assembly of silicon and magnetic material;
The exposed magnetic material in the face of assembly first is etched away or is oxidized to insulator, to obtain H U-shaped magnetic Property storage track, wherein, first face is the face where the opening of first concave shaped space that the assembly includes.
It is described to deposit one in the H the first concave shaped spaces in the first possible implementation of first aspect Layer magnetic material, and silicon materials are filled up in the first concave shaped space after depositing the magnetic material, to construct silicon and magnetic material After the assembly of material, insulation is etched away or is oxidized in the magnetic material that the face of assembly first is exposed Body, so that before obtaining H U-shaped magnetic storage track, methods described also includes:
N number of second concave shaped space, second concave shaped space and institute are etched on the assembly by etching technics State that the first concave shaped space is orthogonal, the N is the integer more than 1;
The magnetic material that the face of assembly first is exposed etches away or is oxidized to insulator, to obtain H U Shape magnetic storage track, including:
By the exposed magnetic in the face of assembly first including the H the first concave shaped spaces and N number of second concave shaped space Material etch falls or is oxidized to insulator, to obtain H × N number of U-shaped magnetic storage track.
With reference to the first possible implementation of first aspect, in second of possible implementation of first aspect In, it is described that one layer of magnetic material is deposited in the H the first concave shaped spaces, and first after the magnetic material is deposited is recessed Shape fills up silicon materials in space, after constructing the assembly of silicon and magnetic material, it is described by etching technics at described group Before N number of second concave shaped space is etched on zoarium, methods described also includes:
One layer of photoresist is applied on the assembly, and it is recessed to carve on the photoresist by photoetching process the N number of 3rd Shape space;
It is described to etch N number of second concave shaped space on the assembly by etching technics, including:
Downward etching is carried out to the assembly along N number of 3rd concave shaped space of the photoresist, etches N number of the Two concave shaped spaces, second concave shaped space are identical with the direction of the 3rd concave shaped space and width.
With reference to second of possible implementation of first aspect, in the third possible implementation of first aspect In, it is described to carve N number of 3rd concave shaped space on the photoresist by photoetching process, including:
Photoetching is carried out to the photoresist using the first mask plate, it is empty to carve N number of 3rd spill on the photoresist Between.
With reference to any of the above-described implementation of first aspect, in the 4th kind of possible implementation of first aspect, institute State before etching H the first concave shaped spaces on silicon body by etching technics, methods described also includes:
One layer of photoresist is applied on the silicon body, and carves H the 4th spills on the photoresist by photoetching process Space;
It is described to etch on silicon body H the first concave shaped spaces by etching technics, including:
Downward etching is carried out to the silicon body along H the 4th concave shaped spaces of the photoresist, etches H first Concave shaped space, first concave shaped space are identical with the direction of the 4th concave shaped space and width.
With reference to the 4th kind of possible implementation of first aspect, in the 5th kind of possible implementation of first aspect In, it is described to carve on the photoresist H the 4th concave shaped spaces by photoetching process, including:
Photoetching is carried out to the photoresist using the second mask plate, it is empty to carve H the 4th spills on the photoresist Between.
Second aspect, the embodiment of the present invention provide a kind of Preparation equipment of magnetic storage track, including:First etching is single Member, sedimentation unit and removal unit, wherein:
First etch unit, for etching H the first concave shaped spaces, the H on silicon body by etching technics For the integer more than 1;
The sedimentation unit, for depositing one layer of magnetic material in the H the first concave shaped spaces, and described in deposition Silicon materials are filled up in the first concave shaped space after magnetic material, to construct the assembly of silicon and magnetic material;
The removal unit, for etching away or being oxidized to absolutely the exposed magnetic material in the face of assembly first Edge body, to obtain H U-shaped magnetic storage track, wherein, first face is first concave shaped space that the assembly includes Opening where face.
In the first possible implementation of second aspect, the equipment also includes:
Second etch unit, it is described for etching N number of second concave shaped space on the assembly by etching technics Second concave shaped space is orthogonal with first concave shaped space, and the N is the integer more than 1;
The removal unit is additionally operable to that the assembly of the H the first concave shaped spaces and N number of second concave shaped space will be included The exposed magnetic material in first face etches away or is oxidized to insulator, to obtain H × N number of U-shaped magnetic storage track.
With reference to the first possible implementation of second aspect, in second of possible implementation of second aspect In, the equipment also includes:
First lithographic cell, for applying one layer of photoresist on the assembly, and by photoetching process in the photoetching N number of 3rd concave shaped space is carved on glue;
Second etch unit is additionally operable to carry out the assembly along N number of 3rd concave shaped space of the photoresist Downward etching, etch N number of second concave shaped space, direction and width of second concave shaped space with the 3rd concave shaped space Spend identical.
With reference to any of the above-described implementation of second aspect, in the third possible implementation of second aspect, institute Stating equipment also includes:
Second lithographic cell, for applying one layer of photoresist on the silicon body, and by photoetching process in the photoresist On carve H the 4th concave shaped spaces;
First etch unit be additionally operable to along H the 4th concave shaped spaces of the photoresist silicon body is carried out to Under etching, etch H the first concave shaped spaces, direction and width of first concave shaped space with the 4th concave shaped space It is identical.
The third aspect, the embodiment of the present invention provide a kind of magnetic storage track, and the magnetic storage track is that U-shaped magnetic is deposited Track is stored up, wherein, the U-shaped magnetic storage track is by depositing one layer of magnetic material in the H of silicon body the first concave shaped spaces Material, and the combination that silicon materials construct silicon and magnetic material is filled up in the first concave shaped space after depositing the magnetic material Body, and the exposed magnetic material in the face of assembly first is etched away or be oxidized to insulator H U-shaped magnetic of gained and is deposited Store up a U-shaped magnetic storage track in track;Wherein, first face is that first spill that the assembly includes is empty Between opening where face, the H the first concave shaped spaces be etched by etching technics on the silicon body H it is first recessed Shape space, the H are the integer more than 1.
In the first possible implementation of the third aspect, the U-shaped magnetic storage rail road specifically still passes through bag Include the H the first concave shaped spaces and N number of second concave shaped space the exposed magnetic material in the face of assembly first etch away or Person is oxidized to insulator, a U-shaped magnetic storage track in gained H × N number of U-shaped magnetic storage track, wherein, it is described N number of Second concave shaped space is to etch N number of second concave shaped space on the assembly by etching technics, and second spill is empty Between it is orthogonal with first concave shaped space, the N is integer more than 1.
With reference to the first possible implementation of the third aspect, in second of possible implementation of the third aspect In, N number of second concave shaped space is specific still to be carried out downwards along N number of 3rd concave shaped space of photoresist to the assembly Etching, N number of second concave shaped space etched, the direction of second concave shaped space and the 3rd concave shaped space and width It is identical;Wherein, N number of 3rd concave shaped space is by applying one layer of photoresist on the assembly, and passing through photoetching process N number of 3rd concave shaped space carved on the photoresist.
With reference to any of the above-described implementation of the third aspect, in the third possible implementation of the third aspect, institute State H the first concave shaped spaces and downward etching specifically or along H the 4th concave shaped spaces of photoresist carried out to the silicon body, H the first concave shaped spaces etched, first concave shaped space are identical with the direction of the 4th concave shaped space and width;Its In, the H the 4th concave shaped spaces are by applying one layer of photoresist on the silicon body, and by photoetching process in the photoetching H the 4th concave shaped spaces carved on glue.
In above-mentioned technical proposal, H the first concave shaped spaces are etched on silicon body by etching technics, the H is more than 1 Integer;One layer of magnetic material is deposited in the H the first concave shaped spaces, and first after the magnetic material is deposited is recessed Shape fills up silicon materials in space, to construct the assembly of silicon and magnetic material;By the exposed magnetic in the face of assembly first Material etch falls or is oxidized to insulator, to obtain H U-shaped magnetic storage track.Above-mentioned manufacture can be realized by one Secondary property produces multiple magnetic storage tracks, so as to improve the efficiency of manufacture magnetic storage track.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is a kind of schematic flow sheet of the preparation method of magnetic storage track provided in an embodiment of the present invention;
Fig. 2 is the schematic flow sheet of the preparation method of another magnetic storage track provided in an embodiment of the present invention;
Fig. 3 is the schematic flow sheet of the preparation method of another magnetic storage track provided in an embodiment of the present invention;
Fig. 4 is optional process schematic provided in an embodiment of the present invention;
Fig. 5 is that optional mask plate provided in an embodiment of the present invention is intended to;
Fig. 6 is optional process schematic provided in an embodiment of the present invention;
Fig. 7 is that optional mask plate provided in an embodiment of the present invention is intended to;
Fig. 8 is a kind of structural representation of the Preparation equipment of magnetic storage track provided in an embodiment of the present invention;
Fig. 9 is the structural representation of the Preparation equipment of another magnetic storage track provided in an embodiment of the present invention;
Figure 10 is the structural representation of the Preparation equipment of another magnetic storage track provided in an embodiment of the present invention;
Figure 11 is a kind of structural representation of magnetic storage track provided in an embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made Embodiment, belong to the scope of protection of the invention.
Fig. 1 is that the embodiment of the present invention provides a kind of schematic flow sheet of the preparation method of magnetic storage track, such as Fig. 1 institutes Show, comprise the following steps:
101st, H the first concave shaped spaces are etched on silicon body by etching technics, the H is the integer more than 1.
Optionally, above-mentioned silicon body can be specifically the silicon body that silica Si02 is formed, and the silicon body can be specifically long The silicon body of cube or square.
102nd, one layer of magnetic material is deposited in the H the first concave shaped spaces, and after the magnetic material is deposited Silicon materials are filled up in first concave shaped space, to construct the assembly of silicon and magnetic material.
Optionally, above-mentioned one layer of magnetic material of deposition in H the first concave shaped spaces can be specifically that one layer of deposition is uniform Magnetic material, that is, the thickness of the magnetic material deposited throughout is identical.Wherein, above-mentioned magnetic material can be specifically magnetic Material FeCoNi.
103rd, the exposed magnetic material in the face of assembly first is etched away or is oxidized to insulator, to obtain H U Shape magnetic storage track, wherein, where the opening for first concave shaped space that first face includes for the assembly Face.
Optionally, above-mentioned U-shaped magnetic storage rail road can be specifically nano wire U-shaped magnetic storage track.
In above-mentioned technical proposal, H the first concave shaped spaces are etched on silicon body by etching technics, the H is more than 1 Integer;One layer of magnetic material is deposited in the H the first concave shaped spaces, and first after the magnetic material is deposited is recessed Shape fills up silicon materials in space, to construct the assembly of silicon and magnetic material;By the exposed magnetic in the face of assembly first Material etch falls or is oxidized to insulator, to obtain H U-shaped magnetic storage track.Above-mentioned implementation can be realized by one Secondary property produces multiple magnetic storage tracks, so as to improve the efficiency of manufacture magnetic storage track.
Fig. 2 is the schematic flow sheet of the preparation method of another magnetic storage track provided in an embodiment of the present invention, such as Fig. 2 It is shown, comprise the following steps:
201st, H the first concave shaped spaces are etched on silicon body by etching technics, the H is the integer more than 1.
Optionally, the depth of above-mentioned first concave shaped space can be determined, the first concave shaped space according to the thickness of silicon body Depth can be specifically that the thickness of silicon body subtracts a specific thickness.
202nd, one layer of magnetic material is deposited in the H the first concave shaped spaces, and after the magnetic material is deposited Silicon materials are filled up in first concave shaped space, to construct the assembly of silicon and magnetic material.
Optionally, after step 202, before step 203, combinations thereof body can also be mechanically polished, with The assembly smooth to one.
203rd, N number of second concave shaped space, second concave shaped space are etched on the assembly by etching technics Orthogonal with first concave shaped space, the N is the integer more than 1.
Such as:The direction of above-mentioned first concave shaped space is the side of the first concave shaped space using the first face of silicon body as the plane of reference To for transverse direction, then the direction can of above-mentioned second concave shaped space is the longitudinal direction of the plane of reference.
204th, it is the face of assembly first including the H the first concave shaped spaces and N number of second concave shaped space is exposed Magnetic material etches away or is oxidized to insulator, to obtain H × N number of U-shaped magnetic storage track;Wherein, first face is institute State the face where the opening for first concave shaped space that assembly includes.
It can be interpreted as etching away or be oxidized to insulation by the magnetic material for connecting multiple U-shaped magnetic storage tracks Body, so as to obtain H × N number of independent U-shaped magnetic storage track.
As an alternative embodiment, as shown in figure 3, after step 202, before step 203, methods described It can also include:
205th, one layer of photoresist is applied on the assembly, and carves on the photoresist by photoetching process N number of the Three concave shaped spaces.
Step 203 can specifically include:
Downward etching is carried out to the assembly along N number of 3rd concave shaped space of the photoresist, etches N number of the Two concave shaped spaces, second concave shaped space are identical with the direction of the 3rd concave shaped space and width.
Optionally, the assembly as shown in Fig. 4-1 can be obtained by by step 202, can be obtained by by step 205 The object for including combinations thereof body and photoresist as shown in the Fig. 4-2, wherein, 401 be the light for making N number of 3rd concave shaped space by lithography Photoresist, 402 be the 3rd concave shaped space, and 403 magnetic material to deposit, 404 be silicon body, and silicon body this moment includes step certainly The silicon body of 202 fillings.The combination is etched into N number of second concave shaped space by 203 cans again, specifically can be such as Fig. 4-3 institutes Show, wherein, 405 be the second concave shaped space.Because the second concave shaped space is etched downwards along the 3rd concave shaped space, so in group Ramped shaped edge would not occur on zoarium, and be not in burr.Certainly after step 203, can also be by removal Photoresist is stated, to obtain as shown in Fig. 4-4, then the H the first concave shaped spaces and N number of second recessed will be included by step 204 The magnetic material 406 that the face of assembly first in shape space is exposed etches away or is oxidized to insulator, to obtain H × N number of U-shaped magnetic Property storage track.
As an alternative embodiment, N number of is carved on the photoresist by photoetching process in step 205 Three concave shaped spaces can specifically include:
Photoetching is carried out to the photoresist using the first mask plate, it is empty to carve N number of 3rd spill on the photoresist Between.
Wherein, the first mask plate specifically can so that as shown in figure 5, wherein, 501 photoetching pieces can carry out photoetching to photoresist, I.e. photoresist position corresponding with 501 photoetching pieces all can the photoetching of all 501 photoetching piece institutes fall, and photoresist with 502 retain pieces it is corresponding Position will retain.
As an alternative embodiment, before step 201, methods described can also include:
206th, one layer of photoresist is applied on the silicon body, and carves H the 4th on the photoresist by photoetching process Concave shaped space;
Step 201 can specifically include:
Downward etching is carried out to the silicon body along H the 4th concave shaped spaces of the photoresist, etches H first Concave shaped space, first concave shaped space are identical with the direction of the 4th concave shaped space and width.
Optionally, after applying one layer of photoresist on the silicon body by step 206, can obtain as in Figure 6-1, its In, 601 represent photoresist, and 602 represent silicon body.After H the 4th concave shaped spaces being carved by step 207 on the photoresist, It can be obtained by as in fig. 6-2, wherein, 603 represent the 4th concave shaped space.It is empty that H the first spills are etched by step 201 Between can be obtained by object as shown in Fig. 6-3, wherein, 604 represent the first concave shaped spaces.Due to the first concave shaped space be along 4th concave shaped space etches downwards, and because the attribute of photoresist will not produce deformation in etching technics, so on silicon body Ramped shaped edge would not occur, and be not in burr.Step 202 deposits one layer of magnetic material in the first concave shaped space Afterwards, it is possible to the object as shown in Fig. 6-4 is obtained, wherein, 605 represent the magnetic material of deposition.Can is depositing afterwards Silicon materials are filled up in first concave shaped space of magnetic material, obtain an assembly as shown in Fig. 4-1.
As an alternative embodiment, H the is carved on the photoresist by photoetching process in step 206 Four concave shaped spaces, including:
Photoetching is carried out to the photoresist using the second mask plate, it is empty to carve H the 4th spills on the photoresist Between.
Wherein, the first mask plate specifically can so that as shown in fig. 7, wherein, 701 photoetching pieces can carry out photoetching to photoresist, I.e. photoresist position corresponding with 701 photoetching pieces all can the photoetching of all 701 photoetching piece institutes fall, and photoresist with 702 retain pieces it is corresponding Position will retain.
As an alternative embodiment, above-mentioned first concave shaped space can be specifically that the very high spill of aspect ratio is empty Between, i.e., the first concave shaped space depth is very deep, and narrower in width.And above-mentioned second concave shaped space can be specifically that aspect ratio is very high Concave shaped space, i.e., the second concave shaped space depth is very deep, and narrower in width.The aspect ratio of the U-shaped storage track so obtained is very high, So in use, U-shaped storage track just only needs to take the seldom space of element device, so as to save the sky of element device Between.
In above-mentioned technical proposal, the embodiment for the plurality of optional realized on the basis of above example, and can Improve the efficiency of manufacture magnetic storage track.
It is apparatus of the present invention embodiment below, apparatus of the present invention embodiment is used to perform the inventive method embodiment one to two The method of realization, for convenience of description, the part related to the embodiment of the present invention is illustrate only, particular technique details does not disclose , it refer to the embodiment of the present invention one and embodiment two.
Fig. 8 is a kind of structural representation of the Preparation equipment of magnetic storage track provided in an embodiment of the present invention, such as Fig. 8 institutes Show, including:First etch unit 81, sedimentation unit 82 and removal unit 83, wherein:
First etch unit 81, for etching H the first concave shaped spaces on silicon body by etching technics, the H is Integer more than 1.
Optionally, above-mentioned silicon body can be specifically the silicon body that silica Si02 is formed, and the silicon body can be specifically long The silicon body of cube or square.
Sedimentation unit 82, for depositing one layer of magnetic material in the H the first concave shaped spaces, and depositing the magnetic Silicon materials are filled up in the first concave shaped space after property material, to construct the assembly of silicon and magnetic material.
Optionally, above-mentioned one layer of magnetic material of deposition in H the first concave shaped spaces can be specifically that one layer of deposition is uniform Magnetic material, that is, the thickness of the magnetic material deposited throughout is identical.Wherein, above-mentioned magnetic material can be specifically magnetic Material FeCoNi.
Removal unit 83, for etching away or being oxidized to insulation by the exposed magnetic material in the face of assembly first Body, to obtain H U-shaped magnetic storage track, wherein, first face is first concave shaped space that the assembly includes Face where being open.
Optionally, above-mentioned U-shaped magnetic storage rail road can be specifically nano wire U-shaped magnetic storage track.
Optionally, above-mentioned first etch unit 81 specifically can with etching machine, removal unit 83 can be specifically etching machine or Person's oxidation unit.
In above-mentioned technical proposal, H the first concave shaped spaces are etched on silicon body by etching technics, the H is more than 1 Integer;One layer of magnetic material is deposited in the H the first concave shaped spaces, and first after the magnetic material is deposited is recessed Shape fills up silicon materials in space, to construct the assembly of silicon and magnetic material;By the exposed magnetic in the face of assembly first Material etch falls or is oxidized to insulator, to obtain H U-shaped magnetic storage track.Above-mentioned implementation can be realized by one Secondary property produces multiple magnetic storage tracks, so as to improve the efficiency of manufacture magnetic storage track.
Fig. 9 is the structural representation of the Preparation equipment of magnetic storage track provided in an embodiment of the present invention, as shown in figure 9, Including:First etch unit 91, sedimentation unit 92, the second etch unit 93 and removal unit 94, wherein:
First etch unit 91, for etching H the first concave shaped spaces on silicon body by etching technics, the H is Integer more than 1.
Optionally, the depth of above-mentioned first concave shaped space can be determined, the first concave shaped space according to the thickness of silicon body Depth can be specifically that the thickness of silicon body subtracts a specific thickness.
Sedimentation unit 92, for depositing one layer of magnetic material in the H the first concave shaped spaces, and depositing the magnetic Silicon materials are filled up in the first concave shaped space after property material, to construct the assembly of silicon and magnetic material.
Optionally, above-mentioned one layer of magnetic material of deposition in H the first concave shaped spaces can be specifically that one layer of deposition is uniform Magnetic material, that is, the thickness of the magnetic material deposited throughout is identical.Wherein, above-mentioned magnetic material can be specifically magnetic Material FeCoNi.
Second etch unit 93, for etching N number of second concave shaped space, institute on the assembly by etching technics State that the second concave shaped space is orthogonal with first concave shaped space, the N is the integer more than 1;
Such as:The direction of above-mentioned first concave shaped space is the side of the first concave shaped space using the first face of silicon body as the plane of reference To for transverse direction, then the direction can of above-mentioned second concave shaped space is the longitudinal direction of the plane of reference.
Removal unit 94, for the assembly first of the H the first concave shaped spaces and N number of second concave shaped space will to be included The exposed magnetic material in face etches away or is oxidized to insulator, to obtain H × N number of U-shaped magnetic storage track;Wherein, it is described First face is the face where the opening for first concave shaped space that the assembly includes.
It can be interpreted as etching away the magnetic material for connecting the quasi- magnetic storage track of multiple U-shapeds, so as to obtain H × N The individual quasi- magnetic storage track of independent U-shaped.
As an alternative embodiment, as shown in Figure 10, the equipment can also include:
First lithographic cell 95, for applying one layer of photoresist on the assembly, and by photoetching process in the light N number of 3rd concave shaped space is carved in photoresist;
Second etch unit 93 can be also used for entering the assembly along N number of 3rd concave shaped space of the photoresist The downward etching of row, etches N number of second concave shaped space, the direction of second concave shaped space and the 3rd concave shaped space and Width is identical.
Because the second concave shaped space is etched downwards along the 3rd concave shaped space, would not occur so on assembly tiltedly Ramp shaped edge, and be not in burr.
As an alternative embodiment, the first lithographic cell 95 can be also used for using the first mask plate to the light Photoresist carries out photoetching, to carve N number of 3rd concave shaped space on the photoresist.
As an alternative embodiment, the equipment can also include:
Second lithographic cell 96, for applying one layer of photoresist on the silicon body, and by photoetching process in the photoetching H the 4th concave shaped spaces are carved on glue;
First etch unit 91 can be also used for carrying out the silicon body along H the 4th concave shaped spaces of the photoresist Downward etching, etch H the first concave shaped spaces, direction and width of first concave shaped space with the 4th concave shaped space Spend identical.
Because the first concave shaped space is etched downwards along the 4th concave shaped space, would not so occur slope on silicon body Shape edge, and be not in burr.
As an alternative embodiment, the second lithographic cell 96 can be also used for using the second mask plate to the light Photoresist carries out photoetching, to carve H the 4th concave shaped spaces on the photoresist.
As an alternative embodiment, above-mentioned first concave shaped space can be specifically that the very high spill of aspect ratio is empty Between, i.e., the first concave shaped space depth is very deep, and narrower in width.And above-mentioned second concave shaped space can be specifically that aspect ratio is very high Concave shaped space, i.e., the second concave shaped space depth is very deep, and narrower in width.The aspect ratio of the U-shaped storage track so obtained is very high, So in use, U-shaped storage track just only needs to take the seldom space of element device, so as to save the sky of element device Between.
In above-mentioned technical proposal, the embodiment for the plurality of optional realized on the basis of above example, and can Improve the efficiency of manufacture magnetic storage track.
Figure 11 is a kind of structural representation of magnetic storage track provided in an embodiment of the present invention, as shown in figure 11, described Magnetic storage track is U-shaped magnetic storage track, wherein, the U-shaped magnetic storage track is recessed by the H individual first in silicon body One layer of magnetic material is deposited in shape space, and silicon materials are filled up in the first concave shaped space after depositing the magnetic material The assembly of silicon and magnetic material is constructed, and the exposed magnetic material in the face of assembly first is etched away or is oxidized to A U-shaped magnetic storage track in H U-shaped magnetic storage track obtained by insulator;Wherein, first face is the combination Face where the opening for first concave shaped space that body includes, the H the first concave shaped spaces are in institute by etching technics State and H the first concave shaped spaces are etched on silicon body, the H is the integer more than 1.
Optionally, above-mentioned silicon body can be specifically the silicon body that silica Si02 is formed, and the silicon body can be specifically long The silicon body of cube or square.
Optionally, above-mentioned one layer of magnetic material of deposition in H the first concave shaped spaces can be specifically that one layer of deposition is uniform Magnetic material, that is, the thickness of the magnetic material deposited throughout is identical.Wherein, above-mentioned magnetic material can be specifically magnetic Material FeCoNi.
Optionally, above-mentioned U-shaped magnetic storage rail road can be specifically nano wire U-shaped magnetic storage track.
Optionally, above-mentioned U-shaped magnetic storage rail road specifically can also be by including the H the first concave shaped spaces and N The magnetic material that the face of assembly first of individual second concave shaped space is exposed etches away or is oxidized to insulator, gained H × N number of A U-shaped magnetic storage track in U-shaped magnetic storage track, wherein, N number of second concave shaped space is to pass through etching technics N number of second concave shaped space is etched on the assembly, second concave shaped space is orthogonal with first concave shaped space, institute It is the integer more than 1 to state N.
I.e. above-mentioned U-shaped magnetic storage track is a U-shaped magnetic in the H × N number of U-shaped magnetic storage track disposably obtained Property storage track.
Optionally, combinations thereof body can also be by assembly smooth obtained by being mechanically polished.
Optionally, above-mentioned N number of second concave shaped space specifically can also be N number of 3rd concave shaped space along photoresist to institute State assembly and carry out downward etching, N number of second concave shaped space etched, second concave shaped space and the 3rd spill The direction in space is identical with width;Wherein, N number of 3rd concave shaped space is by applying one layer of photoetching on the assembly Glue, and N number of 3rd concave shaped space carved by photoetching process on the photoresist.
Feasible, above-mentioned N number of 3rd concave shaped space specifically can also be to be carried out using the first mask plate to the photoresist Photoetching, with N number of 3rd concave shaped space carved on the photoresist.
Optionally, above-mentioned H the first concave shaped spaces specifically can also be H the 4th concave shaped spaces along photoresist to institute State silicon body and carry out downward etching, the H etched the first concave shaped spaces, first concave shaped space and the 4th spill sky Between direction it is identical with width;Wherein, the H the 4th concave shaped spaces be by applying one layer of photoresist on the silicon body, and H the 4th concave shaped spaces carved by photoetching process on the photoresist.
Optionally, above-mentioned H the 4th concave shaped spaces specifically can also be is carried out using the second mask plate to the photoresist Photoetching, with H the 4th concave shaped spaces carved on the photoresist.
Optionally, the magnetic storage rail road for the plurality of optional that the present embodiment provides specifically can also be real by above method Apply a U-shaped magnetic storage track in example and multiple U-shaped magnetic storage tracks manufactured by device embodiment.For the ease of Illustrate, illustrate only part related to the present embodiment, particular technique details does not disclose, and the method that refer to the present invention is implemented Example and device embodiment.
In above-mentioned technical proposal, the U-shaped magnetic storage track is by being deposited in the H of silicon body the first concave shaped spaces One layer of magnetic material, and silicon materials construction silicon and magnetic are filled up in the first concave shaped space after depositing the magnetic material The assembly of material, and the exposed magnetic material in the face of assembly first is etched away or is oxidized to H obtained by insulator A U-shaped magnetic storage track in individual U-shaped magnetic storage track.Above-mentioned implementation can be realized more by disposably producing Individual magnetic storage track, so as to improve the efficiency of manufacture magnetic storage track.
One of ordinary skill in the art will appreciate that realize all or part of flow in above-described embodiment method, being can be with The hardware of correlation is instructed to complete by computer program, described program can be stored in a computer read/write memory medium In, the program is upon execution, it may include such as the flow of the embodiment of above-mentioned each method.Wherein, described storage medium can be magnetic Dish, CD, read-only memory(Read-Only Memory, ROM)Or random access memory(Random Access Memory, abbreviation RAM)Deng.
Above disclosure is only preferred embodiment of present invention, can not limit the right model of the present invention with this certainly Enclose, therefore the equivalent variations made according to the claims in the present invention, still belong to the scope that the present invention is covered.

Claims (14)

  1. A kind of 1. preparation method of magnetic storage track, it is characterised in that including:
    H the first concave shaped spaces are etched on silicon body by etching technics, the silicon body is made up of silica Si02 Silicon body, the H are the integer more than 1;
    One layer of magnetic material, and the first spill after the magnetic material is deposited are deposited in the H the first concave shaped spaces Silicon materials are filled up in space, to construct the assembly of silicon and magnetic material;
    The exposed magnetic material in the face of assembly first is etched away or be oxidized to insulator, is deposited with obtaining H U-shaped magnetic Track is stored up, wherein, first face is the face where the opening for first concave shaped space that the assembly includes.
  2. 2. the method as described in claim 1, it is characterised in that described that one layer of magnetic is deposited in the H the first concave shaped spaces Property material, and silicon materials are filled up in the first concave shaped space after depositing the magnetic material, to construct silicon and magnetic material After assembly, insulator is etched away or is oxidized in the magnetic material that the face of assembly first is exposed, with Before obtaining H U-shaped magnetic storage track, methods described also includes:
    Etch N number of second concave shaped space on the assembly by etching technics, second concave shaped space and described the One concave shaped space is orthogonal, and the N is the integer more than 1;
    The magnetic material that the face of assembly first is exposed etches away or is oxidized to insulator, to obtain H U-shaped magnetic Property storage track, including:
    By the exposed magnetic material in the face of assembly first including the H the first concave shaped spaces and N number of second concave shaped space Insulator is etched away or is oxidized to, to obtain H × N number of U-shaped magnetic storage track.
  3. 3. method as claimed in claim 2, it is characterised in that described that one layer of magnetic is deposited in the H the first concave shaped spaces Property material, and silicon materials are filled up in the first concave shaped space after depositing the magnetic material, to construct silicon and magnetic material After assembly, it is described N number of second concave shaped space is etched on the assembly by etching technics before, methods described Also include:
    One layer of photoresist is applied on the assembly, and carves N number of 3rd spill sky on the photoresist by photoetching process Between;
    It is described to etch N number of second concave shaped space on the assembly by etching technics, including:
    Downward etching is carried out to the assembly along N number of 3rd concave shaped space of the photoresist, it is recessed to etch N number of second Shape space, second concave shaped space are identical with the direction of the 3rd concave shaped space and width.
  4. 4. method as claimed in claim 3, it is characterised in that it is described carved by photoetching process on the photoresist it is N number of 3rd concave shaped space, including:
    Photoetching is carried out to the photoresist using the first mask plate, to carve N number of 3rd concave shaped space on the photoresist.
  5. 5. such as the method any one of claim 1-4, it is characterised in that described to be etched by etching technics on silicon body Go out before H the first concave shaped spaces, methods described also includes:
    One layer of photoresist is applied on the silicon body, and carves H the 4th concave shaped spaces on the photoresist by photoetching process;
    It is described to etch on silicon body H the first concave shaped spaces by etching technics, including:
    Downward etching is carried out to the silicon body along H the 4th concave shaped spaces of the photoresist, etches H the first spills Space, first concave shaped space are identical with the direction of the 4th concave shaped space and width.
  6. 6. method as claimed in claim 5, it is characterised in that described to carve H on the photoresist by photoetching process 4th concave shaped space, including:
    Photoetching is carried out to the photoresist using the second mask plate, to carve H the 4th concave shaped spaces on the photoresist.
  7. A kind of 7. Preparation equipment of magnetic storage track, it is characterised in that including:First etch unit, sedimentation unit and removal Unit, wherein:
    First etch unit, for etching H the first concave shaped spaces on silicon body by etching technics, the H is big In 1 integer, the silicon body is the silicon body being made up of silica Si02;
    The sedimentation unit, for depositing one layer of magnetic material in the H the first concave shaped spaces, and depositing the magnetic Silicon materials are filled up in the first concave shaped space after material, to construct the assembly of silicon and magnetic material;
    The removal unit, for etching away or being oxidized to insulation by the exposed magnetic material in the face of assembly first Body, to obtain H U-shaped magnetic storage track, wherein, first face is first concave shaped space that the assembly includes Face where being open.
  8. 8. equipment as claimed in claim 7, it is characterised in that the equipment also includes:
    Second etch unit, for etching N number of second concave shaped space on the assembly by etching technics, described second Concave shaped space is orthogonal with first concave shaped space, and the N is the integer more than 1;
    The removal unit is additionally operable to that the assembly first of the H the first concave shaped spaces and N number of second concave shaped space will be included The exposed magnetic material in face etches away or is oxidized to insulator, to obtain H × N number of U-shaped magnetic storage track.
  9. 9. equipment as claimed in claim 8, it is characterised in that the equipment also includes:
    First lithographic cell, for applying one layer of photoresist on the assembly, and by photoetching process on the photoresist Carve N number of 3rd concave shaped space;
    Second etch unit is additionally operable to carry out downwards the assembly along N number of 3rd concave shaped space of the photoresist Etching, etch N number of second concave shaped space, direction and width phase of second concave shaped space with the 3rd concave shaped space Together.
  10. 10. equipment as claimed in any one of claims 7-9, it is characterised in that the equipment also includes:
    Second lithographic cell, for applying one layer of photoresist on the silicon body, and carved by photoetching process on the photoresist Go out H the 4th concave shaped spaces;
    First etch unit is additionally operable to carry out downwards the silicon body along H the 4th concave shaped spaces of the photoresist Etching, etch H the first concave shaped spaces, direction and width phase of first concave shaped space with the 4th concave shaped space Together.
  11. A kind of 11. magnetic storage track, it is characterised in that
    The magnetic storage track is U-shaped magnetic storage track, wherein, the U-shaped magnetic storage track is by the H in silicon body One layer of magnetic material is deposited in individual first concave shaped space, and is filled out in the first concave shaped space after depositing the magnetic material The assembly of full silicon materials construction silicon and magnetic material, and the exposed magnetic material in the face of assembly first etched away or Person is oxidized to a U-shaped magnetic storage track in H U-shaped magnetic storage track obtained by insulator;Wherein, first face is Face where the opening for first concave shaped space that the assembly includes, the H the first concave shaped spaces are to pass through etching Technique etches H the first concave shaped spaces on the silicon body, and the H is the integer more than 1, and the silicon body is by silica The silicon body that Si02 is formed.
  12. 12. magnetic storage track as claimed in claim 11, it is characterised in that the U-shaped magnetic storage rail road is specific still Carved by the exposed magnetic material in the face of assembly first including the H the first concave shaped spaces and N number of second concave shaped space Eating away is oxidized to insulator, a U-shaped magnetic storage track in gained H × N number of U-shaped magnetic storage track, wherein, institute It is to etch N number of second concave shaped space on the assembly by etching technics to state N number of second concave shaped space, and described second is recessed Shape space is orthogonal with first concave shaped space, and the N is the integer more than 1.
  13. 13. magnetic storage track as claimed in claim 12, it is characterised in that N number of second concave shaped space is specific still Downward etching is carried out to the assembly along N number of 3rd concave shaped space of photoresist, N number of second spill etched is empty Between, second concave shaped space is identical with the direction of the 3rd concave shaped space and width;Wherein, N number of 3rd spill is empty Between be by applying one layer of photoresist, and the N number of 3rd carved by photoetching process on the photoresist on the assembly Concave shaped space.
  14. 14. the magnetic storage track as any one of claim 11-13, it is characterised in that the H the first spills are empty Between specific or along photoresist H the 4th concave shaped spaces carry out downward etching to the silicon body, the H etched first Concave shaped space, first concave shaped space are identical with the direction of the 4th concave shaped space and width;Wherein, the H the 4th Concave shaped space is by applying one layer of photoresist, and H carved by photoetching process on the photoresist on the silicon body 4th concave shaped space.
CN201310382143.9A 2013-08-28 2013-08-28 A kind of preparation method of magnetic storage track, equipment and magnetic storage track Active CN104425707B (en)

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CN201310382143.9A CN104425707B (en) 2013-08-28 2013-08-28 A kind of preparation method of magnetic storage track, equipment and magnetic storage track
PCT/CN2014/083878 WO2015027808A1 (en) 2013-08-28 2014-08-07 Method and device for preparing magnetic storage track, and magnetic storage track

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1637928A (en) * 2004-01-08 2005-07-13 惠普开发有限公司 Magnetic memory device
CN101978426A (en) * 2008-03-20 2011-02-16 国际商业机器公司 Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors
CN102349110A (en) * 2009-01-30 2012-02-08 艾沃思宾技术公司 Structure and method for fabricating cladded conductive lines in magnetic memories
CN103137849A (en) * 2011-12-02 2013-06-05 中芯国际集成电路制造(上海)有限公司 Magnetic tunnel junction and forming method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1637928A (en) * 2004-01-08 2005-07-13 惠普开发有限公司 Magnetic memory device
CN101978426A (en) * 2008-03-20 2011-02-16 国际商业机器公司 Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors
CN102349110A (en) * 2009-01-30 2012-02-08 艾沃思宾技术公司 Structure and method for fabricating cladded conductive lines in magnetic memories
CN103137849A (en) * 2011-12-02 2013-06-05 中芯国际集成电路制造(上海)有限公司 Magnetic tunnel junction and forming method thereof

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