CN104425707A - Method and device for preparing magnetic storage track, and magnetic storage track - Google Patents
Method and device for preparing magnetic storage track, and magnetic storage track Download PDFInfo
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- CN104425707A CN104425707A CN201310382143.9A CN201310382143A CN104425707A CN 104425707 A CN104425707 A CN 104425707A CN 201310382143 A CN201310382143 A CN 201310382143A CN 104425707 A CN104425707 A CN 104425707A
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- 238000003860 storage Methods 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title claims abstract description 57
- 239000000696 magnetic material Substances 0.000 claims abstract description 115
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 86
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 83
- 238000005530 etching Methods 0.000 claims abstract description 76
- 239000010703 silicon Substances 0.000 claims abstract description 71
- 239000002210 silicon-based material Substances 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 33
- 239000012212 insulator Substances 0.000 claims abstract description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims description 93
- 238000001259 photo etching Methods 0.000 claims description 44
- 230000008021 deposition Effects 0.000 claims description 24
- 238000002360 preparation method Methods 0.000 claims description 17
- 238000004062 sedimentation Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 17
- 230000001590 oxidative effect Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910002545 FeCoNi Inorganic materials 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000005498 polishing Methods 0.000 description 2
- 238000004590 computer program Methods 0.000 description 1
- -1 described Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
The embodiments of the invention disclose a method for preparing a magnetic storage track. The method comprises: etching H first concave spaces on a silicon body by using an etching process, H being an integer greater than 1; depositing one layer of magnetic materials in the H first concave spaces, and filling silicon materials in the first concave space after the magnetic materials are deposited so as to construct a combination of silicon and the magnetic materials; and etching away the magnetic materials exposed on the first surface of the combination or oxidizing the exposed magnetic materials to insulators so as to obtain H U-shaped magnetic storage tracks, the first surface being a surface on which the opening of the first concave space included by the combination is located. Correspondingly, the embodiments of the invention also provide a device for preparing a magnetic storage track and a magnetic storage track. According to the embodiments of the invention, the efficiency of manufacturing the magnetic storage track can be improved.
Description
Technical field
The present invention relates to manufacture field, particularly relate to a kind of preparation method of magnetic storage track, equipment and magnetic storage track.
Background technology
Current magnetic storage track is applied very extensive in electronic component device, such as, and integrating nanowires magnetic storage track in the semiconductor device.Current manufacture magnetic storage track manufactures magnetic storage track mainly through reactive ion etching technology, but this technology can only manufacture a magnetic storage track at every turn, thus the efficiency manufacturing magnetic storage track is very low.
Summary of the invention
Embodiments provide a kind of preparation method of magnetic storage track, equipment and magnetic storage track, the efficiency manufacturing magnetic storage track can be improved.
First aspect, the preparation method of a kind of magnetic storage track that the embodiment of the present invention provides, comprising:
On silicon body, etch H the first concave shaped space by etching technics, described H be greater than 1 integer;
In described H the first concave shaped space, deposit one deck magnetic material, and fill up silicon materials, to construct the assembly of silicon and magnetic material in the first concave shaped space after the described magnetic material of deposition;
Etched away or be oxidized to insulator by magnetic material exposed for described assembly first surface, to obtain H U-shaped magnetic storage track, wherein, described first surface is the face at the opening place of described first concave shaped space that described assembly comprises.
In the first possible implementation of first aspect, describedly in described H the first concave shaped space, deposit one deck magnetic material, and deposition described magnetic material after the first concave shaped space in fill up silicon materials, after the assembly constructing silicon and magnetic material, described, magnetic material exposed for described assembly first surface is etched away or is oxidized to insulator, before obtaining H U-shaped magnetic storage track, described method also comprises:
On described assembly, etch N number of second concave shaped space by etching technics, described second concave shaped space is orthogonal with described first concave shaped space, described N be greater than 1 integer;
Described magnetic material exposed for described assembly first surface etched away or is oxidized to insulator, with H U-shaped magnetic storage track, comprising:
Magnetic material exposed for the assembly first surface comprising described H the first concave shaped space and N number of second concave shaped space is etched away or is oxidized to insulator, to obtain H × N number of U-shaped magnetic storage track.
In conjunction with the first possible implementation of first aspect, in the implementation that the second of first aspect is possible, describedly in described H the first concave shaped space, deposit one deck magnetic material, and deposition described magnetic material after the first concave shaped space in fill up silicon materials, after the assembly constructing silicon and magnetic material, described on described assembly, etch N number of second concave shaped space by etching technics before, described method also comprises:
Described assembly is coated with one deck photoresist, and on described photoresist, carves N number of 3rd concave shaped space by photoetching process;
Describedly on described assembly, etch N number of second concave shaped space by etching technics, comprising:
N number of 3rd concave shaped space along described photoresist carries out downward etching to described assembly, etches N number of second concave shaped space, and described second concave shaped space is identical with width with the direction of described 3rd concave shaped space.
In conjunction with the implementation that the second of first aspect is possible, in the third possible implementation of first aspect, describedly on described photoresist, carve N number of 3rd concave shaped space by photoetching process, comprising:
The first mask plate is used to carry out photoetching to described photoresist, to carve N number of 3rd concave shaped space on described photoresist.
In conjunction with above-mentioned arbitrary implementation of first aspect, in the 4th kind of possible implementation of first aspect, described on silicon body, etch H the first concave shaped space by etching technics before, described method also comprises:
Described silicon body is coated with one deck photoresist, and on described photoresist, carves H the 4th concave shaped space by photoetching process;
Describedly on silicon body, etch H the first concave shaped space by etching technics, comprising:
H the 4th concave shaped space along described photoresist carries out downward etching to described silicon body, and etch H the first concave shaped space, described first concave shaped space is identical with width with the direction of described 4th concave shaped space.
In conjunction with the 4th kind of possible implementation of first aspect, in the 5th kind of possible implementation of first aspect, describedly on described photoresist, carve H the 4th concave shaped space by photoetching process, comprising:
The second mask plate is used to carry out photoetching to described photoresist, to carve H the 4th concave shaped space on described photoresist.
Second aspect, the embodiment of the present invention provides a kind of Preparation equipment of magnetic storage track, comprising: the first etching unit, sedimentation unit and removal unit, wherein:
Described first etching unit, for being etched H the first concave shaped space on silicon body by etching technics, described H be greater than 1 integer;
Described sedimentation unit, for depositing one deck magnetic material in described H the first concave shaped space, and fills up silicon materials, to construct the assembly of silicon and magnetic material in the first concave shaped space after the described magnetic material of deposition;
Described removal unit, for magnetic material exposed for described assembly first surface is etched away or is oxidized to insulator, to obtain H U-shaped magnetic storage track, wherein, described first surface is the face at the opening place of described first concave shaped space that described assembly comprises.
In the first possible implementation of second aspect, described equipment also comprises:
Second etching unit, for etching N number of second concave shaped space by etching technics on described assembly, described second concave shaped space is orthogonal with described first concave shaped space, described N be greater than 1 integer;
Described removal unit also for magnetic material exposed for the assembly first surface comprising described H the first concave shaped space and N number of second concave shaped space is etched away or is oxidized to insulator, with H × N number of U-shaped magnetic storage track.
In conjunction with the first possible implementation of second aspect, in the implementation that the second of second aspect is possible, described equipment also comprises:
First lithographic cell, for being coated with one deck photoresist on described assembly, and carves N number of 3rd concave shaped space by photoetching process on described photoresist;
Described second etching unit also carries out downward etching for N number of 3rd concave shaped space along described photoresist to described assembly, and etch N number of second concave shaped space, described second concave shaped space is identical with width with the direction of described 3rd concave shaped space.
In conjunction with above-mentioned arbitrary implementation of second aspect, in the third possible implementation of second aspect, described equipment also comprises:
Second lithographic cell, for being coated with one deck photoresist on described silicon body, and carves H the 4th concave shaped space by photoetching process on described photoresist;
Described first etching unit also carries out downward etching for H the 4th concave shaped space along described photoresist to described silicon body, and etch H the first concave shaped space, described first concave shaped space is identical with width with the direction of described 4th concave shaped space.
The third aspect, the embodiment of the present invention provides a kind of magnetic storage track, described magnetic storage track is U-shaped magnetic storage track, wherein, described U-shaped magnetic storage track is by depositing one deck magnetic material in H the first concave shaped space of silicon body, and fill up silicon materials structure silicon and the assembly of magnetic material in the first concave shaped space after the described magnetic material of deposition, and magnetic material exposed for described assembly first surface is etched away or is oxidized to a U-shaped magnetic storage track in insulator gained H U-shaped magnetic storage track; Wherein, described first surface is the face at the opening place of described first concave shaped space that described assembly comprises, and described H the first concave shaped space on described silicon body, etches H the first concave shaped space by etching technics, described H be greater than 1 integer.
In the first possible implementation of the third aspect, described U-shaped magnetic storage rail road is specifically still etched away by the magnetic material that the assembly first surface comprising described H the first concave shaped space and N number of second concave shaped space is exposed or is oxidized to insulator, a U-shaped magnetic storage track in gained H × N number of U-shaped magnetic storage track, wherein, described N number of second concave shaped space on described assembly, etches N number of second concave shaped space by etching technics, described second concave shaped space is orthogonal with described first concave shaped space, described N be greater than 1 integer.
In conjunction with the first possible implementation of the third aspect, in the implementation that the second of the third aspect is possible, described N number of second concave shaped space is concrete or carry out downward etching along N number of 3rd concave shaped space of photoresist to described assembly, N number of second concave shaped space etched, described second concave shaped space is identical with width with the direction of described 3rd concave shaped space; Wherein, described N number of 3rd concave shaped space is by being coated with one deck photoresist on described assembly, and by N number of 3rd concave shaped space that photoetching process carves on described photoresist.
In conjunction with above-mentioned arbitrary implementation of the third aspect, in the third possible implementation of the third aspect, described H concrete or along photoresist H the 4th concave shaped space of the first concave shaped space carries out downward etching to described silicon body, the H etched first concave shaped space, described first concave shaped space is identical with width with the direction of described 4th concave shaped space; Wherein, described H the 4th concave shaped space is by being coated with one deck photoresist on described silicon body, and by H the 4th concave shaped space that photoetching process carves on described photoresist.
In technique scheme, on silicon body, etch H the first concave shaped space by etching technics, described H be greater than 1 integer; In described H the first concave shaped space, deposit one deck magnetic material, and fill up silicon materials, to construct the assembly of silicon and magnetic material in the first concave shaped space after the described magnetic material of deposition; Magnetic material exposed for described assembly first surface is etched away or is oxidized to insulator, to obtain H U-shaped magnetic storage track.Above-mentioned manufacture can realize by the multiple magnetic storage track of disposable production, thus can improve the efficiency manufacturing magnetic storage track.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic flow sheet of the preparation method of a kind of magnetic storage track that the embodiment of the present invention provides;
Fig. 2 is the schematic flow sheet of the preparation method of the another kind of magnetic storage track that the embodiment of the present invention provides;
Fig. 3 is the schematic flow sheet of the preparation method of the another kind of magnetic storage track that the embodiment of the present invention provides;
Fig. 4 is the optional process schematic that the embodiment of the present invention provides;
Fig. 5 is the optional mask plate intention that the embodiment of the present invention provides;
Fig. 6 is the optional process schematic that the embodiment of the present invention provides;
Fig. 7 is the optional mask plate intention that the embodiment of the present invention provides;
Fig. 8 is the structural representation of the Preparation equipment of a kind of magnetic storage track that the embodiment of the present invention provides;
Fig. 9 is the structural representation of the Preparation equipment of the another kind of magnetic storage track that the embodiment of the present invention provides;
Figure 10 is the structural representation of the Preparation equipment of the another kind of magnetic storage track that the embodiment of the present invention provides;
Figure 11 is the structural representation of a kind of magnetic storage track that the embodiment of the present invention provides.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Fig. 1 is the schematic flow sheet that the embodiment of the present invention provides a kind of preparation method of magnetic storage track, as shown in Figure 1, comprises the following steps:
101, on silicon body, etch H the first concave shaped space by etching technics, described H be greater than 1 integer.
Optionally, above-mentioned silicon body can be specifically the silicon body that silicon dioxide Si02 is formed, and this silicon body can be specifically the silicon body of cuboid or square.
102, in described H the first concave shaped space, deposit one deck magnetic material, and fill up silicon materials, to construct the assembly of silicon and magnetic material in the first concave shaped space after the described magnetic material of deposition.
Optionally, above-mentioned one deck magnetic material that deposits in H the first concave shaped space can be specifically deposition one deck homogeneous magnetic material, and the magnetic material namely deposited thickness is throughout identical.Wherein, above-mentioned magnetic material can be specifically magnetic material FeCoNi.
103, etched away or be oxidized to insulator by magnetic material exposed for described assembly first surface, to obtain H U-shaped magnetic storage track, wherein, described first surface is the face at the opening place of described first concave shaped space that described assembly comprises.
Optionally, above-mentioned U-shaped magnetic storage rail road can be specifically nano wire U-shaped magnetic storage track.
In technique scheme, on silicon body, etch H the first concave shaped space by etching technics, described H be greater than 1 integer; In described H the first concave shaped space, deposit one deck magnetic material, and fill up silicon materials, to construct the assembly of silicon and magnetic material in the first concave shaped space after the described magnetic material of deposition; Magnetic material exposed for described assembly first surface is etched away or is oxidized to insulator, to obtain H U-shaped magnetic storage track.Above-mentioned implementation can realize by the multiple magnetic storage track of disposable production, thus can improve the efficiency manufacturing magnetic storage track.
Fig. 2 is the schematic flow sheet of the preparation method of the another kind of magnetic storage track that the embodiment of the present invention provides, and as shown in Figure 2, comprises the following steps:
201, on silicon body, etch H the first concave shaped space by etching technics, described H be greater than 1 integer.
Optionally, the degree of depth of above-mentioned first concave shaped space can be thickness according to silicon body and determine, the degree of depth of the first concave shaped space can be specifically that the thickness of silicon body deducts a specific thickness.
202, in described H the first concave shaped space, deposit one deck magnetic material, and fill up silicon materials, to construct the assembly of silicon and magnetic material in the first concave shaped space after the described magnetic material of deposition.
Optionally, after step 202, before step 203, mechanical polishing can also be carried out to combinations thereof body, to obtain a level and smooth assembly.
203, on described assembly, etch N number of second concave shaped space by etching technics, described second concave shaped space is orthogonal with described first concave shaped space, described N be greater than 1 integer.
Such as: the direction of above-mentioned first concave shaped space is with the first surface of silicon body for the plane of reference, the direction of the first concave shaped space is that laterally the direction of so above-mentioned second concave shaped space can be just the longitudinal direction of this plane of reference.
204, magnetic material exposed for the assembly first surface comprising described H the first concave shaped space and N number of second concave shaped space is etched away or is oxidized to insulator, to obtain H × N number of U-shaped magnetic storage track; Wherein, described first surface is the face at the opening place of described first concave shaped space that described assembly comprises.
Namely can be understood as and the magnetic material connecting multiple U-shaped magnetic storage track is etched away or is oxidized to insulator, thus obtain H × N number of independently U-shaped magnetic storage track.
As the optional execution mode of one, as shown in Figure 3, after step 202, before step 203, described method can also comprise:
205, on described assembly, be coated with one deck photoresist, and on described photoresist, carve N number of 3rd concave shaped space by photoetching process.
Step 203 specifically can comprise:
N number of 3rd concave shaped space along described photoresist carries out downward etching to described assembly, etches N number of second concave shaped space, and described second concave shaped space is identical with width with the direction of described 3rd concave shaped space.
Optionally, the assembly as shown in Fig. 4-1 just can be obtained by step 202, by the object comprising combinations thereof body and photoresist that step 205 just can obtain as shown in the Fig. 4-2, wherein, 401 for making the photoresist of N number of 3rd concave shaped space by lithography, and 402 is the 3rd concave shaped space, and 403 is the magnetic material deposited, 404 is silicon body, and silicon body this moment comprises the silicon body that step 202 is filled certainly.Just this combination can be etched N number of second concave shaped space by 203 again, specifically can as shown in Fig. 4-3, wherein, 405 is the second concave shaped space.Because the second concave shaped space etches downwards along the 3rd concave shaped space, ramped shaped edge would not be there is like this on assembly, and there will not be burr.Certainly after step 203, can also by the above-mentioned photoresist of removal, to obtain as shown in Fig. 4-4, by step 204, magnetic material 406 exposed for the assembly first surface comprising described H the first concave shaped space and N number of second concave shaped space is etched away or is oxidized to insulator again, to obtain H × N number of U-shaped magnetic storage track.
As the optional execution mode of one, carving N number of 3rd concave shaped space by photoetching process on described photoresist and specifically can comprise in step 205:
The first mask plate is used to carry out photoetching to described photoresist, to carve N number of 3rd concave shaped space on described photoresist.
Wherein, the first mask plate specifically can as shown in Figure 5, and wherein, 501 photoetching sheets can carry out photoetching to photoresist, and the position that namely photoresist is corresponding with 501 photoetching sheets all can all be fallen in the photoetching of 501 photoetching sheet institutes, and photoresist and 502 retains position corresponding to sheet will retain.
As the optional execution mode of one, before step 201, described method can also comprise:
206, on described silicon body, be coated with one deck photoresist, and on described photoresist, carve H the 4th concave shaped space by photoetching process;
Step 201 specifically can comprise:
H the 4th concave shaped space along described photoresist carries out downward etching to described silicon body, and etch H the first concave shaped space, described first concave shaped space is identical with width with the direction of described 4th concave shaped space.
Optionally, after being coated with one deck photoresist, can obtain as in Figure 6-1 by step 206 on described silicon body, wherein, 601 represent photoresist, and 602 represent silicon body.After carving H the 4th concave shaped space by step 207 on described photoresist, just can obtain as in fig. 6-2, wherein, 603 represent the 4th concave shaped space.The object that H the first concave shaped space just can obtain as shown in Fig. 6-3 is etched through step 201, wherein, 604 expression the first concave shaped space.Because the first concave shaped space etches along the 4th concave shaped space, and can not deformation be produced due to the attribute of photoresist in etching technics downwards, ramped shaped edge would not be occurred like this on silicon body, and there will not be burr.After step 202 deposits one deck magnetic material in the first concave shaped space, just can obtain the object as shown in Fig. 6-4, wherein, 605 represent the magnetic material deposited.Just can fill up silicon materials in the first concave shaped space of deposition of magnetic material afterwards, obtain an assembly as shown in Fig. 4-1.
As the optional execution mode of one, in step 206, on described photoresist, carve H the 4th concave shaped space by photoetching process, comprising:
The second mask plate is used to carry out photoetching to described photoresist, to carve H the 4th concave shaped space on described photoresist.
Wherein, the first mask plate specifically can as shown in Figure 7, and wherein, 701 photoetching sheets can carry out photoetching to photoresist, and the position that namely photoresist is corresponding with 701 photoetching sheets all can all be fallen in the photoetching of 701 photoetching sheet institutes, and photoresist and 702 retains position corresponding to sheet will retain.
As the optional execution mode of one, above-mentioned first concave shaped space can be specifically the concave shaped space that aspect ratio is very high, and namely the first concave shaped space degree of depth is very dark, and narrower in width.And above-mentioned second concave shaped space can be specifically the concave shaped space that aspect ratio is very high, namely the second concave shaped space degree of depth is very dark, and narrower in width.The aspect ratio of the U-shaped storage track obtained like this is very high, and like this when applying, U-shaped storage track just only needs to take the little space of element device, thus can save the space of element device.
In technique scheme, above embodiment basis on the execution mode of plurality of optional that realizes, and the efficiency manufacturing magnetic storage track can be improved.
Be apparatus of the present invention embodiment below, the method that apparatus of the present invention embodiment realizes for performing the inventive method embodiment one to two, for convenience of explanation, illustrate only the part relevant to the embodiment of the present invention, concrete ins and outs do not disclose, and please refer to the embodiment of the present invention one and embodiment two.
Fig. 8 is the structural representation of the Preparation equipment of a kind of magnetic storage track that the embodiment of the present invention provides, and as shown in Figure 8, comprising: the first etching unit 81, sedimentation unit 82 and removal unit 83, wherein:
First etching unit 81, for being etched H the first concave shaped space on silicon body by etching technics, described H be greater than 1 integer.
Optionally, above-mentioned silicon body can be specifically the silicon body that silicon dioxide Si02 is formed, and this silicon body can be specifically the silicon body of cuboid or square.
Sedimentation unit 82, for depositing one deck magnetic material in described H the first concave shaped space, and fills up silicon materials, to construct the assembly of silicon and magnetic material in the first concave shaped space after the described magnetic material of deposition.
Optionally, above-mentioned one deck magnetic material that deposits in H the first concave shaped space can be specifically deposition one deck homogeneous magnetic material, and the magnetic material namely deposited thickness is throughout identical.Wherein, above-mentioned magnetic material can be specifically magnetic material FeCoNi.
Removal unit 83, for magnetic material exposed for described assembly first surface is etched away or is oxidized to insulator, to obtain H U-shaped magnetic storage track, wherein, described first surface is the face at the opening place of described first concave shaped space that described assembly comprises.
Optionally, above-mentioned U-shaped magnetic storage rail road can be specifically nano wire U-shaped magnetic storage track.
Optionally, above-mentioned first etching unit 81 specifically can etching machine, and removal unit 83 can be specifically etching machine or oxidation unit.
In technique scheme, on silicon body, etch H the first concave shaped space by etching technics, described H be greater than 1 integer; In described H the first concave shaped space, deposit one deck magnetic material, and fill up silicon materials, to construct the assembly of silicon and magnetic material in the first concave shaped space after the described magnetic material of deposition; Magnetic material exposed for described assembly first surface is etched away or is oxidized to insulator, to obtain H U-shaped magnetic storage track.Above-mentioned implementation can realize by the multiple magnetic storage track of disposable production, thus can improve the efficiency manufacturing magnetic storage track.
Fig. 9 is the structural representation of the Preparation equipment of the magnetic storage track that the embodiment of the present invention provides, and as shown in Figure 9, comprising: the first etching unit 91, sedimentation unit 92, second etch unit 93 and removal unit 94, wherein:
First etching unit 91, for being etched H the first concave shaped space on silicon body by etching technics, described H be greater than 1 integer.
Optionally, the degree of depth of above-mentioned first concave shaped space can be thickness according to silicon body and determine, the degree of depth of the first concave shaped space can be specifically that the thickness of silicon body deducts a specific thickness.
Sedimentation unit 92, for depositing one deck magnetic material in described H the first concave shaped space, and fills up silicon materials, to construct the assembly of silicon and magnetic material in the first concave shaped space after the described magnetic material of deposition.
Optionally, above-mentioned one deck magnetic material that deposits in H the first concave shaped space can be specifically deposition one deck homogeneous magnetic material, and the magnetic material namely deposited thickness is throughout identical.Wherein, above-mentioned magnetic material can be specifically magnetic material FeCoNi.
Second etching unit 93, for etching N number of second concave shaped space by etching technics on described assembly, described second concave shaped space is orthogonal with described first concave shaped space, described N be greater than 1 integer;
Such as: the direction of above-mentioned first concave shaped space is with the first surface of silicon body for the plane of reference, the direction of the first concave shaped space is that laterally the direction of so above-mentioned second concave shaped space can be just the longitudinal direction of this plane of reference.
Removal unit 94, for being etched away or be oxidized to insulator by magnetic material exposed for the assembly first surface comprising described H the first concave shaped space and N number of second concave shaped space, to obtain H × N number of U-shaped magnetic storage track; Wherein, described first surface is the face at the opening place of described first concave shaped space that described assembly comprises.
Namely can be understood as and the magnetic material connecting the accurate magnetic storage track of multiple U-shaped is etched away, thus obtain H × accurate magnetic storage track of N number of independently U-shaped.
As the optional execution mode of one, as shown in Figure 10, described equipment can also comprise:
First lithographic cell 95, for being coated with one deck photoresist on described assembly, and carves N number of 3rd concave shaped space by photoetching process on described photoresist;
Second etching unit 93 can also be used for carrying out downward etching along N number of 3rd concave shaped space of described photoresist to described assembly, and etch N number of second concave shaped space, described second concave shaped space is identical with width with the direction of described 3rd concave shaped space.
Because the second concave shaped space etches downwards along the 3rd concave shaped space, ramped shaped edge would not be there is like this on assembly, and there will not be burr.
As the optional execution mode of one, the first lithographic cell 95 can also be used for using the first mask plate to carry out photoetching to described photoresist, to carve N number of 3rd concave shaped space on described photoresist.
As the optional execution mode of one, described equipment can also comprise:
Second lithographic cell 96, for being coated with one deck photoresist on described silicon body, and carves H the 4th concave shaped space by photoetching process on described photoresist;
First etching unit 91 can also be used for carrying out downward etching along H the 4th concave shaped space of described photoresist to described silicon body, and etch H the first concave shaped space, described first concave shaped space is identical with width with the direction of described 4th concave shaped space.
Because the first concave shaped space etches downwards along the 4th concave shaped space, ramped shaped edge would not be there is like this on silicon body, and there will not be burr.
As the optional execution mode of one, the second lithographic cell 96 can also be used for using the second mask plate to carry out photoetching to described photoresist, to carve H the 4th concave shaped space on described photoresist.
As the optional execution mode of one, above-mentioned first concave shaped space can be specifically the concave shaped space that aspect ratio is very high, and namely the first concave shaped space degree of depth is very dark, and narrower in width.And above-mentioned second concave shaped space can be specifically the concave shaped space that aspect ratio is very high, namely the second concave shaped space degree of depth is very dark, and narrower in width.The aspect ratio of the U-shaped storage track obtained like this is very high, and like this when applying, U-shaped storage track just only needs to take the little space of element device, thus can save the space of element device.
In technique scheme, above embodiment basis on the execution mode of plurality of optional that realizes, and the efficiency manufacturing magnetic storage track can be improved.
Figure 11 is the structural representation of a kind of magnetic storage track that the embodiment of the present invention provides, as shown in figure 11, described magnetic storage track is U-shaped magnetic storage track, wherein, described U-shaped magnetic storage track is by depositing one deck magnetic material in H the first concave shaped space of silicon body, and fill up silicon materials structure silicon and the assembly of magnetic material in the first concave shaped space after the described magnetic material of deposition, and U-shaped magnetic storage track magnetic material exposed for described assembly first surface being etched away or is oxidized in insulator gained H U-shaped magnetic storage track, wherein, described first surface is the face at the opening place of described first concave shaped space that described assembly comprises, and described H the first concave shaped space on described silicon body, etches H the first concave shaped space by etching technics, described H be greater than 1 integer.
Optionally, above-mentioned silicon body can be specifically the silicon body that silicon dioxide Si02 is formed, and this silicon body can be specifically the silicon body of cuboid or square.
Optionally, above-mentioned one deck magnetic material that deposits in H the first concave shaped space can be specifically deposition one deck homogeneous magnetic material, and the magnetic material namely deposited thickness is throughout identical.Wherein, above-mentioned magnetic material can be specifically magnetic material FeCoNi.
Optionally, above-mentioned U-shaped magnetic storage rail road can be specifically nano wire U-shaped magnetic storage track.
Optionally, above-mentioned U-shaped magnetic storage rail road can also be specifically that the magnetic material that the assembly first surface by comprising described H the first concave shaped space and N number of second concave shaped space is exposed etches away or is oxidized to insulator, a U-shaped magnetic storage track in gained H × N number of U-shaped magnetic storage track, wherein, described N number of second concave shaped space on described assembly, etches N number of second concave shaped space by etching technics, described second concave shaped space is orthogonal with described first concave shaped space, described N be greater than 1 integer.
Namely above-mentioned U-shaped magnetic storage track is a U-shaped magnetic storage track in the disposable H × N number of U-shaped magnetic storage track obtained.
Optionally, combinations thereof body can also be by carry out mechanical polishing obtain level and smooth assembly.
Optionally, above-mentioned N number of second concave shaped space can also be specifically carry out downward etching along N number of 3rd concave shaped space of photoresist to described assembly, N number of second concave shaped space etched, described second concave shaped space is identical with width with the direction of described 3rd concave shaped space; Wherein, described N number of 3rd concave shaped space is by being coated with one deck photoresist on described assembly, and by N number of 3rd concave shaped space that photoetching process carves on described photoresist.
Feasible, above-mentioned N number of 3rd concave shaped space can also be specifically that use first mask plate carries out photoetching to described photoresist, with N number of 3rd concave shaped space carved on described photoresist.
Optionally, above-mentioned H the first concave shaped space can also be specifically carry out downward etching along H the 4th concave shaped space of photoresist to described silicon body, the H etched first concave shaped space, described first concave shaped space is identical with width with the direction of described 4th concave shaped space; Wherein, described H the 4th concave shaped space is by being coated with one deck photoresist on described silicon body, and by H the 4th concave shaped space that photoetching process carves on described photoresist.
Optionally, above-mentioned H the 4th concave shaped space can also be specifically that use second mask plate carries out photoetching to described photoresist, with the H carved on described photoresist the 4th concave shaped space.
Optionally, the magnetic storage rail road of plurality of optional that the present embodiment provides can also be specifically by a U-shaped magnetic storage track in the multiple U-shaped magnetic storage tracks manufactured by embodiment of the method above and device embodiment.For convenience of explanation, illustrate only part related to the present embodiment, concrete ins and outs do not disclose, and please refer to embodiment of the method for the present invention and device embodiment.
In technique scheme, described U-shaped magnetic storage track is by depositing one deck magnetic material in H the first concave shaped space of silicon body, and fill up silicon materials structure silicon and the assembly of magnetic material in the first concave shaped space after the described magnetic material of deposition, and magnetic material exposed for described assembly first surface is etched away or is oxidized to a U-shaped magnetic storage track in insulator gained H U-shaped magnetic storage track.Above-mentioned implementation can realize by the multiple magnetic storage track of disposable production, thus can improve the efficiency manufacturing magnetic storage track.
One of ordinary skill in the art will appreciate that all or part of flow process realized in above-described embodiment method, that the hardware that can carry out instruction relevant by computer program has come, described program can be stored in a computer read/write memory medium, this program, when performing, can comprise the flow process of the embodiment as above-mentioned each side method.Wherein, described storage medium can be magnetic disc, CD, read-only store-memory body (Read-Only Memory, ROM) or random access memory (Random Access Memory is called for short RAM) etc.
Above disclosedly be only present pre-ferred embodiments, certainly can not limit the interest field of the present invention with this, therefore according to the equivalent variations that the claims in the present invention are done, still belong to the scope that the present invention is contained.
Claims (14)
1. a preparation method for magnetic storage track, is characterized in that, comprising:
On silicon body, etch H the first concave shaped space by etching technics, described H be greater than 1 integer;
In described H the first concave shaped space, deposit one deck magnetic material, and fill up silicon materials, to construct the assembly of silicon and magnetic material in the first concave shaped space after the described magnetic material of deposition;
Etched away or be oxidized to insulator by magnetic material exposed for described assembly first surface, to obtain H U-shaped magnetic storage track, wherein, described first surface is the face at the opening place of described first concave shaped space that described assembly comprises.
2. the method for claim 1, it is characterized in that, describedly in described H the first concave shaped space, deposit one deck magnetic material, and deposition described magnetic material after the first concave shaped space in fill up silicon materials, after the assembly constructing silicon and magnetic material, etched away described or be oxidized to insulator by magnetic material exposed for described assembly first surface, before obtaining H U-shaped magnetic storage track, described method also comprises:
On described assembly, etch N number of second concave shaped space by etching technics, described second concave shaped space is orthogonal with described first concave shaped space, described N be greater than 1 integer;
Described magnetic material exposed for described assembly first surface etched away or is oxidized to insulator, with H U-shaped magnetic storage track, comprising:
Magnetic material exposed for the assembly first surface comprising described H the first concave shaped space and N number of second concave shaped space is etched away or is oxidized to insulator, to obtain H × N number of U-shaped magnetic storage track.
3. method as claimed in claim 2, it is characterized in that, describedly in described H the first concave shaped space, deposit one deck magnetic material, and deposition described magnetic material after the first concave shaped space in fill up silicon materials, after the assembly constructing silicon and magnetic material, described on described assembly, etch N number of second concave shaped space by etching technics before, described method also comprises:
Described assembly is coated with one deck photoresist, and on described photoresist, carves N number of 3rd concave shaped space by photoetching process;
Describedly on described assembly, etch N number of second concave shaped space by etching technics, comprising:
N number of 3rd concave shaped space along described photoresist carries out downward etching to described assembly, etches N number of second concave shaped space, and described second concave shaped space is identical with width with the direction of described 3rd concave shaped space.
4. method as claimed in claim 3, is characterized in that, describedly on described photoresist, carves N number of 3rd concave shaped space by photoetching process, comprising:
The first mask plate is used to carry out photoetching to described photoresist, to carve N number of 3rd concave shaped space on described photoresist.
5. the method according to any one of claim 1-4, is characterized in that, described on silicon body, etch H the first concave shaped space by etching technics before, described method also comprises:
Described silicon body is coated with one deck photoresist, and on described photoresist, carves H the 4th concave shaped space by photoetching process;
Describedly on silicon body, etch H the first concave shaped space by etching technics, comprising:
H the 4th concave shaped space along described photoresist carries out downward etching to described silicon body, and etch H the first concave shaped space, described first concave shaped space is identical with width with the direction of described 4th concave shaped space.
6. method as claimed in claim 5, is characterized in that, describedly on described photoresist, carves H the 4th concave shaped space by photoetching process, comprising:
The second mask plate is used to carry out photoetching to described photoresist, to carve H the 4th concave shaped space on described photoresist.
7. a Preparation equipment for magnetic storage track, is characterized in that, comprising: the first etching unit, sedimentation unit and removal unit, wherein:
Described first etching unit, for being etched H the first concave shaped space on silicon body by etching technics, described H be greater than 1 integer;
Described sedimentation unit, for depositing one deck magnetic material in described H the first concave shaped space, and fills up silicon materials, to construct the assembly of silicon and magnetic material in the first concave shaped space after the described magnetic material of deposition;
Described removal unit, for magnetic material exposed for described assembly first surface is etched away or is oxidized to insulator, to obtain H U-shaped magnetic storage track, wherein, described first surface is the face at the opening place of described first concave shaped space that described assembly comprises.
8. equipment as claimed in claim 7, it is characterized in that, described equipment also comprises:
Second etching unit, for etching N number of second concave shaped space by etching technics on described assembly, described second concave shaped space is orthogonal with described first concave shaped space, described N be greater than 1 integer;
Described removal unit also for magnetic material exposed for the assembly first surface comprising described H the first concave shaped space and N number of second concave shaped space is etched away or is oxidized to insulator, with H × N number of U-shaped magnetic storage track.
9. equipment as claimed in claim 8, it is characterized in that, described equipment also comprises:
First lithographic cell, for being coated with one deck photoresist on described assembly, and carves N number of 3rd concave shaped space by photoetching process on described photoresist;
Described second etching unit also carries out downward etching for N number of 3rd concave shaped space along described photoresist to described assembly, and etch N number of second concave shaped space, described second concave shaped space is identical with width with the direction of described 3rd concave shaped space.
10. equipment as claimed in any one of claims 7-9, it is characterized in that, described equipment also comprises:
Second lithographic cell, for being coated with one deck photoresist on described silicon body, and carves H the 4th concave shaped space by photoetching process on described photoresist;
Described first etching unit also carries out downward etching for H the 4th concave shaped space along described photoresist to described silicon body, and etch H the first concave shaped space, described first concave shaped space is identical with width with the direction of described 4th concave shaped space.
11. 1 kinds of magnetic storage tracks, is characterized in that,
Described magnetic storage track is U-shaped magnetic storage track, wherein, described U-shaped magnetic storage track is by depositing one deck magnetic material in H the first concave shaped space of silicon body, and fill up silicon materials structure silicon and the assembly of magnetic material in the first concave shaped space after the described magnetic material of deposition, and magnetic material exposed for described assembly first surface is etched away or is oxidized to a U-shaped magnetic storage track in insulator gained H U-shaped magnetic storage track; Wherein, described first surface is the face at the opening place of described first concave shaped space that described assembly comprises, and described H the first concave shaped space on described silicon body, etches H the first concave shaped space by etching technics, described H be greater than 1 integer.
12. magnetic storage tracks as claimed in claim 11, it is characterized in that, described U-shaped magnetic storage rail road is specifically still etched away by the magnetic material that the assembly first surface comprising described H the first concave shaped space and N number of second concave shaped space is exposed or is oxidized to insulator, a U-shaped magnetic storage track in gained H × N number of U-shaped magnetic storage track, wherein, described N number of second concave shaped space on described assembly, etches N number of second concave shaped space by etching technics, described second concave shaped space is orthogonal with described first concave shaped space, described N be greater than 1 integer.
13. magnetic storage tracks as claimed in claim 12, it is characterized in that, described N number of second concave shaped space is concrete or carry out downward etching along N number of 3rd concave shaped space of photoresist to described assembly, N number of second concave shaped space etched, described second concave shaped space is identical with width with the direction of described 3rd concave shaped space; Wherein, described N number of 3rd concave shaped space is by being coated with one deck photoresist on described assembly, and by N number of 3rd concave shaped space that photoetching process carves on described photoresist.
14. magnetic storage tracks according to any one of claim 11-13, it is characterized in that, described H concrete or along photoresist H the 4th concave shaped space of the first concave shaped space carries out downward etching to described silicon body, the H etched first concave shaped space, described first concave shaped space is identical with width with the direction of described 4th concave shaped space; Wherein, described H the 4th concave shaped space is by being coated with one deck photoresist on described silicon body, and by H the 4th concave shaped space that photoetching process carves on described photoresist.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310382143.9A CN104425707B (en) | 2013-08-28 | 2013-08-28 | A kind of preparation method of magnetic storage track, equipment and magnetic storage track |
| PCT/CN2014/083878 WO2015027808A1 (en) | 2013-08-28 | 2014-08-07 | Method and device for preparing magnetic storage track, and magnetic storage track |
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| CN201310382143.9A CN104425707B (en) | 2013-08-28 | 2013-08-28 | A kind of preparation method of magnetic storage track, equipment and magnetic storage track |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1637928A (en) * | 2004-01-08 | 2005-07-13 | 惠普开发有限公司 | Magnetic memory device |
| CN101978426A (en) * | 2008-03-20 | 2011-02-16 | 国际商业机器公司 | Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors |
| CN102349110A (en) * | 2009-01-30 | 2012-02-08 | 艾沃思宾技术公司 | Structure and method for fabricating cladded conductive lines in magnetic memories |
| CN103137849A (en) * | 2011-12-02 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction and forming method thereof |
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2013
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1637928A (en) * | 2004-01-08 | 2005-07-13 | 惠普开发有限公司 | Magnetic memory device |
| CN101978426A (en) * | 2008-03-20 | 2011-02-16 | 国际商业机器公司 | Magnetically de-coupling magnetic memory cells and bit/word lines for reducing bit selection errors |
| CN102349110A (en) * | 2009-01-30 | 2012-02-08 | 艾沃思宾技术公司 | Structure and method for fabricating cladded conductive lines in magnetic memories |
| CN103137849A (en) * | 2011-12-02 | 2013-06-05 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction and forming method thereof |
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