CN103137849A - Magnetic tunnel junction and forming method thereof - Google Patents
Magnetic tunnel junction and forming method thereof Download PDFInfo
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- CN103137849A CN103137849A CN201110397317XA CN201110397317A CN103137849A CN 103137849 A CN103137849 A CN 103137849A CN 201110397317X A CN201110397317X A CN 201110397317XA CN 201110397317 A CN201110397317 A CN 201110397317A CN 103137849 A CN103137849 A CN 103137849A
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Abstract
A magnetic tunnel junction comprises a semiconductor substrate, an opening located inside the semiconductor substrate, a fixed magnetic material layer, a tunnel insulating material layer, and a free magnetic material layer, wherein the fixed magnetic material layer is located on the bottom portion of the opening and part of the lateral wall of the opening, the tunnel insulating material layer covers the fixed magnetic material layer and part of the lateral wall of the opening, and the free magnetic material layer is located inside the opening and covers the tunnel insulating material layer. Contact area between the formed tunnel junction and a top-portion electrode layer and contact area between the formed tunnel junction and a bottom-portion electrode layer are increased, driving current of a magnetic storage is increased and performance is better. Correspondingly, the invention further provides a forming method of the tunnel junction. The formed tunnel junction is good in quality, high in stability, good in magnetic storage performance, and simple in process.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate in particular to a kind of magnetic tunnel-junction and forming method thereof.
Background technology
In recent years, due to magnetic memory (Magnetic Random Access Memory, MRAM) have short access time, characteristics non-volatile and low in energy consumption, magnetic memory receives much concern as being applicable to the storage device on the messaging devices such as computer or communication tool.
The magnetic memory of prior art stores information in magnetic tunnel-junction (MagneticTunnel Junction, MTJ) structure into by applying magnetic field, and by measuring the electric current reading information of MTJ.Particularly, described MTJ is made of two magnetic material layers and the insulating barrier between described two magnetic material layers.
The structure of the magnetic memory of prior art comprises: as the transistor of switching device with for the magnetic tunnel junction cell of storing data.Wherein, the structure of described magnetic tunnel-junction please refer to Fig. 1, magnetic tunnel junction cell comprises top conductive layer 113, magnetic tunnel junction cell main body (Magnetic tunnel junction, MTJ) 110, bottom conductive layer 101, wherein, magnetic tunnel junction cell main body 110 replaces stacking forming by fixed magnetic material layer (PL) 105, tunnel insulation material layer 107 and free magnetism material layer (FL) 109.Described magnetic tunnel junction cell main body 110 is three layers or sandwich construction, wherein said magnetic tunnel junction cell main body 110 can also comprise: be positioned at the first tunnel insulation material layer 111 on described free magnetism material layer 109 surfaces, be used for described free magnetism material layer 109 and top conductive layer 113 are separated; Be positioned at the second tunnel insulation material layer 103 on described bottom conductive layer 101 surfaces, be used for described fixed magnetic material layer 105 and bottom conductive layer 101 are separated.
Wherein, the effect of described fixed magnetic material layer 105 is that the direction of magnetization is fixed, and compares with the direction of magnetization of free magnetism material layer 109, and the direction of magnetization of free magnetism material layer 109 is able to programme.When the magnetic access memory was carried out write operation, the magnetization of free magnetism material layer 109 was programmed for respect to the magnetization of fixed magnetic material layer 105 parallel (logical zero state), shows as low resistance state; Perhaps antiparallel (logical one state), show as high-impedance state, thereby realize two store statuss.In the process of " reading ", by the resistance of comparison magnetic tunnel junction cell and the resistance of standard cell, read the state of magnetic RAM.
Yet along with further reducing of process node, the reliability of the magnetic memory that prior art forms is low, can't further satisfy industrial requirement.
More structures about magnetic tunnel-junction in magnetic memory please refer to publication number and are the United States Patent (USP) of " US20070176251A1 ".
Summary of the invention
The problem that the present invention solves is to provide a kind of magnetic tunnel-junction and forming method thereof, and the reliability of the magnetic memory of formation is high.
For addressing the above problem, embodiments of the invention provide a kind of magnetic tunnel-junction, comprising:
Semiconductor substrate is positioned at the opening of described Semiconductor substrate;
The fixed magnetic material layer is positioned at bottom and the partial sidewall of described opening;
The tunnel insulation material layer covers the sidewall of described fixed magnetic material layer and part opening;
The free magnetism material layer is positioned at described opening and covers described tunnel insulation material layer.
Alternatively, the material of described fixed magnetic material layer is CoFe or CoFeB; The material of described free magnetism material layer is CoFe or CoFeB.
Alternatively, the material of described tunnel insulation material layer is magnesium oxide, strontium oxide strontia, barium monoxide or radium oxide.
Alternatively, also comprise: bottom electrode layer is positioned at bottom and the partial sidewall of described opening, the described bottom electrode layer of described fixed magnetic layer of material covers; Top electrode layer covers described free magnetism material layer, and fills full described opening.
Alternatively, the material of described bottom electrode layer is Ta, PtMn or Ru; The material of described top electrode layer is Ta, PtMn or Ru.
Accordingly, embodiments of the invention also provide a kind of formation method of magnetic tunnel-junction, comprising:
Semiconductor substrate is provided, is formed with opening in described Semiconductor substrate;
Formation is positioned at the bottom of described opening and the fixed magnetic material layer of partial sidewall;
Form the tunnel insulation material layer of the sidewall that covers described fixed magnetic material layer and part opening;
Formation is positioned at described opening and covers the free magnetism material layer of described tunnel insulation material layer.
Alternatively, the formation technique of described fixed magnetic material layer and free magnetism material layer comprises the muriatic chemical vapor deposition method in reducing metal.
Alternatively, the technological parameter of the muriatic chemical vapor deposition method in described reducing metal comprises: frequency is 2-4MHz, and power is 200-500W, and pressure is 0.01-0.1Torr, and temperature is 250-350 ℃, Cl
2Flow be 500-2000sccm.
Alternatively, the step of the muriatic chemical vapor deposition method in described reducing metal is: metallic plate is provided, and described metallic plate is placed on above opening; The chlorine of plasma state and described metallic plate react, and form the metal chloride of gaseous state; Metal in the metal chloride of described gaseous state combines with the material of open bottom, forms the intermediate layer; The metal chloride of described gaseous state and the reaction of described intermediate layer form fixed magnetic material layer and/or free magnetism material layer in described open bottom.
Alternatively, also comprise: pass into inert gas as the carrier of the chlorine of plasma state.
Alternatively, described inert gas is Ar, He or N
2
Alternatively, the flow of described inert gas is 500-3000sccm.
Alternatively, the formation technique of described fixed magnetic material layer and/or free magnetism material layer also comprises: annealing treating process.
Alternatively, the technological parameter of described annealing treating process comprises: 1 atmospheric pressure, and inert gas Ar or He, temperature is 300 ℃-400 ℃, annealing duration 2-4 minute; Perhaps 1 atmospheric pressure, inert gas Ar or He, temperature is 500 ℃-600 ℃, annealing duration 8-15 second.
Alternatively, the formation method of described tunnel insulation material layer is: adopt the muriatic chemical vapor deposition method in reducing metal, form the metal level that is positioned at described fixed magnetic material surface; The described metal level of oxidation forms the tunnel insulation material layer.
Alternatively, the technological parameter of the muriatic chemical vapor deposition method in described reducing metal comprises: frequency is 2-4MHz, and power is 200-500W, and pressure is 0.01-0.1Torr, and temperature is 250-350 ℃, Cl
2Flow be 500-2000sccm.
Alternatively, the process parameters range of the described metal level of oxidation is: the flow of the oxygen of ozone or plasma state is 500-2000sccm, and pressure is 0.01-0.1Torr.
Alternatively, also comprise: the carrier of the chlorine of plasma state when passing into inert gas as the muriatic chemical vapor deposition method in reducing metal.
Alternatively, described inert gas is Ar, He or N
2, flow is 500-3000sccm.
Alternatively, the formation method of described tunnel insulation material layer is: adopt atom layer deposition process to form the tunnel insulation material layer that is positioned at described fixed magnetic material surface.
Alternatively, the first reactant that adopts during described atom layer deposition process is Mg (thd)
2, the second reactant is oxygen or ozone.
Alternatively, the process parameters range of described atom layer deposition process is: temperature is more than or equal to 200 ℃, and the flow of oxygen or ozone is 300sccm, frequency 13-15MHz, and power is more than or equal to 200W.
Alternatively, also comprise: formation is positioned at the bottom of described opening and the bottom electrode layer of partial sidewall, and it is surperficial that described fixed magnetic material layer is positioned at described bottom electrode layer; Formation is positioned at described free magnetism material surface, and fills the top electrode layer of full described opening.
Alternatively, the formation technique of described bottom electrode layer and top electrode layer is the muriatic chemical vapor deposition method in reducing metal.
Compared with prior art, embodiments of the invention have the following advantages:
Described fixed magnetic material layer, tunnel insulation material layer and free magnetism material layer all are positioned at opening, and the sidewall of cover part opening, the surface area of the magnetic tunnel-junction that is formed by described fixed magnetic material layer, tunnel insulation material layer and free magnetism material layer in unit space increases, follow-up contact area with top electrode layer and bottom electrode layer increases, the drive current of magnetic memory increases, and performance is better.
Further, directly adopt the muriatic chemical vapor deposition method in reducing metal, bottom and partial sidewall at opening form fixed magnetic material layer, free magnetism material layer and tunnel insulation material layer, processing step is simple, the quality of above-mentioned each layer that forms is good, the loss that when having avoided chemico-mechanical polishing or etching technics, Semiconductor substrate and magnetic tunnel-junction has been caused has improved the performance of magnetic memory.
The mode that adopts the muriatic chemical vapor deposition method in reducing metal and annealing treating process to combine, form fixed magnetic material layer and/or free magnetism material layer, can adjust flexibly according to actual needs the ratio of each composition in fixed magnetic material layer and/or free magnetism material layer, mode is more flexible, and the fixed magnetic material layer that forms and/or the quality of free magnetism material layer are good, and the performance of magnetic memory is good.
Description of drawings
Fig. 1 is the cross-sectional view of the magnetic tunnel-junction of prior art;
Fig. 2 is the cross-sectional view of magnetic tunnel-junction of the formation of the embodiment of the present invention;
Fig. 3 is the schematic flow sheet of formation method of the magnetic tunnel-junction of the embodiment of the present invention;
Fig. 4-Figure 12 is the cross-sectional view of forming process of the magnetic tunnel-junction of first embodiment of the invention;
Figure 13-Figure 16 is the cross-sectional view of the forming process of magnetic tunnel-junction in the second embodiment of the present invention;
Figure 17 is the plan structure schematic diagram of the formation device of magnetic tunnel-junction in embodiments of the invention.
Embodiment
Just as stated in the Background Art, along with further reducing of process node, the reliability of the memory that prior art forms is low, can't further satisfy industrial requirement.Through research, inventor's discovery, the reliability of magnetic memory is relevant with the structure of magnetic tunnel-junction, and the reliability of the magnetic tunnel-junction of planar structure is lower than the reliability of the magnetic tunnel-junction of stereochemical structure.
Yet, be subjected to the restriction of material and process conditions in prior art, can only be under ultra high vacuum (UHV) condition, adopt physical gas-phase deposition (PVD) to form magnetic tunnel-junction, yet, because physical gas-phase deposition (PVD) surface quality when forming the magnetic tunnel-junction of stereochemical structure is relatively poor, the magnetic tunnel-junction that prior art forms mostly is planar structure, please refer to Fig. 1, magnetic tunnel junction cell main body 110 comprises: the tunnel insulation material layer 107 of magnetic material layer (fixed magnetic material layer 105 and free magnetism material layer 109) and magnetic tunnel-junction.
After further research, the inventor finds, adopts the muriatic chemical vapor deposition method in reducing metal (Metal Chloride Reduction Chemical Vapor Deposition, MCR-CVD), can form the magnetic tunnel-junction of stereochemical structure.The present inventor finds, the technique when adopting the muriatic chemical vapor deposition method in reducing metal to form the magnetic tunnel-junction of stereochemical structure is simple, and the surface quality of the magnetic tunnel-junction of formation is good, and the reliability of magnetic memory is high.
Accordingly, the inventor of the embodiment of the present invention provides magnetic tunnel-junction of a kind of stereochemical structure and forming method thereof.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
Please refer to Fig. 2, Fig. 2 shows the magnetic tunnel-junction of the stereochemical structure of the embodiment of the present invention, comprising:
Semiconductor substrate 200 is positioned at the opening (not shown) of described Semiconductor substrate 200;
Bottom electrode layer 201 is positioned at bottom and the partial sidewall of described opening;
Fixed magnetic material layer 203 covers described bottom electrode layer 201;
Tunnel insulation material layer 205 covers the sidewall of described fixed magnetic material layer 203 and part opening;
Free magnetism material layer 207 is positioned at described opening and covers described tunnel insulation material layer 205;
Top electrode layer 209 covers described free magnetism material layer 207, and flushes with described Semiconductor substrate 200.
Wherein, described Semiconductor substrate 200 is used to subsequent technique that technique platform is provided; Described opening defines size and the position of magnetic tunnel-junction, and the formation technique of described opening is etching technics.
Described bottom electrode layer 201 is used for transmission of signal, and the material of described bottom electrode layer 201 is the material that conducts electricity very well, for example tantalum (Ta), platinum manganese PtMn or ruthenium (Ru).In an embodiment of the present invention, the material of described bottom electrode layer 201 is tantalum.
Described fixed magnetic material layer 203 is used for fixed magnetisation direction, and compares with the direction of magnetization of free magnetism material layer 207.The material of described fixed magnetic material layer 203 is CoFe or CoFeB.In an embodiment of the present invention, the material of described fixed magnetic material layer 203 is CoFeB.
Described tunnel insulation material layer 205 is used for isolating described fixed magnetic material layer 203 and free magnetism material layer 207, and the material of described tunnel insulation material layer 205 is magnesium oxide (MgO), strontium oxide strontia (SrO), barium monoxide (BaO) or radium oxide (RaO).In an embodiment of the present invention, the material of described tunnel insulation material layer 205 is magnesium oxide.
The direction of magnetization of described free magnetism material layer 207 is able to programme.When magnetic memory was carried out write operation, the magnetization of free magnetism material layer 207 was programmed for respect to the magnetization of fixed magnetic material layer 203 parallel (logical zero state), shows as low resistance state; Perhaps antiparallel (logical one state), show as high-impedance state, thereby realize two store statuss.In the process of " reading ", by the resistance of comparison magnetic tunnel-junction and the resistance of standard cell, read the state of magnetic RAM.The material of described free magnetism material layer 207 is CoFe or CoFeB.In an embodiment of the present invention, the material of described free magnetism material layer 207 is CoFeB.
Described top electrode layer 209 is corresponding with described bottom electrode layer 201, is used for transmission of signal.The material of described top electrode layer 209 is the material that conducts electricity very well, for example tantalum (Ta), platinum manganese (PtMn) or ruthenium (Ru).In an embodiment of the present invention, the material of described top electrode layer 209 is ruthenium.
In embodiments of the invention, described fixed magnetic material layer, tunnel insulation material layer and free magnetism material layer all are positioned at opening, and the sidewall of cover part opening, the surface area of the magnetic tunnel-junction that is formed by described fixed magnetic material layer, tunnel insulation material layer and free magnetism material layer in unit space increases, follow-up contact area with top electrode layer and bottom electrode layer increases, the drive current of magnetic memory increases, and performance is better.
Please refer to Fig. 3, the formation method of the magnetic tunnel-junction of the embodiment of the present invention comprises:
Step S31 provides Semiconductor substrate, is formed with opening in described Semiconductor substrate;
Step S32, formation is positioned at the bottom of described opening and the fixed magnetic material layer of partial sidewall;
Step S33, formation covers the tunnel insulation material layer of the sidewall of described fixed magnetic material layer and part opening;
Step S34 forms the free magnetism material layer that is positioned at described opening and covers described tunnel insulation material layer.
Specifically please refer to Fig. 4-Figure 17, Fig. 4-Figure 17 shows formation method and the corresponding device that forms of magnetic tunnel-junction in various embodiments of the present invention.
The first embodiment
Please refer to Fig. 4, Semiconductor substrate 300 is provided, be formed with opening 304 in described Semiconductor substrate 300.
Described Semiconductor substrate 300 is used to subsequent technique that technique platform is provided; Described opening 304 defines size and the position of magnetic tunnel-junction, and the formation technique of described opening 304 is etching technics, because the method that adopts etching technics to form opening 304 is well known to those skilled in the art, does not repeat them here.
Please continue with reference to figure 4, formation is positioned at the bottom of described opening 304 and the bottom electrode layer 301 of partial sidewall.
Described bottom electrode layer 301 is used for transmission of signal, and the material of described bottom electrode layer 301 is the material that conducts electricity very well, for example tantalum (Ta), platinum manganese (PtMn) or ruthenium (Ru).The formation technique of described bottom electrode layer 301 is depositing operation.
The inventor finds, when forming the magnetic tunnel-junction of stereochemical structure shown in Figure 2, if adopt the method for common physical vapour deposition (PVD) to form bottom electrode layer 201, fixed magnetic material layer 203, tunnel insulation material layer 205, free magnetism material layer 207 and top electrode layer 209 in opening, carry out exemplary illustrated to form tunnel insulation material layer 205 as example, the formation step of described tunnel insulation material layer 205 comprises: at first form the tunnel insulation film (not shown) that covers described fixed magnetic material layer 203; Then adopt the method planarization described tunnel insulation film of chemico-mechanical polishing (CMP), finally form tunnel insulation material layer 205.The surface quality of the tunnel insulation material layer 205 that the method for employing physical vapour deposition (PVD) not only forms is poor, and processing step is many, easily damages Semiconductor substrate 200 and magnetic tunnel-junction, and the reliability of the magnetic memory of formation is low.
The inventor finds, adopt suitable formation technique, when for example the muriatic chemical vapor deposition method in reducing metal or atom layer deposition process formed above-mentioned each layer, the quality on the surface of each of formation layer was good, the quality of magnetic tunnel-junction is good, and the reliability of the magnetic memory of formation is high.
In an embodiment of the present invention, the material of described bottom electrode layer 301 is tantalum, and the formation technique of described bottom electrode layer 301 is the muriatic chemical vapor deposition method in reducing metal.The concrete formation step of described bottom electrode layer 301 comprises: the tantalum plate is provided, and described tantalum plate is positioned over the top of described opening 304; The chlorine of plasma state and the reaction of tantalum plate, the tantalic chloride of formation gaseous state; The enrichment in opening of the tantalic chloride of described gaseous state is combined with the silicon of open bottom and partial sidewall, forms tantalum SiClx film; The tantalic chloride of described gaseous state and tantalum SiClx film continue reaction, with tantalum reduction, form bottom electrode layer 301 in open bottom and partial sidewall.
Please refer to Fig. 5, adopt the muriatic chemical vapor deposition method in reducing metal, form the first metal material layer 303 that covers described bottom electrode layer 301 surfaces.
The step that the muriatic chemical vapor deposition method in described reducing metal forms the first metal material layer 303 comprises: the first metallic plate (not shown) is provided, places described the first metallic plate in opening 304 tops; The chlorine of plasma state and described the first metallic plate react, and form the metal chloride of gaseous state; Metal in the metal chloride of described gaseous state combines with the material on intrabasement bottom electrode layer 301 surfaces, forms intermediate layer (not shown); The metal chloride of described gaseous state and the reaction of described intermediate layer, the first metal material layer 303 on described bottom electrode layer 301 surfaces.
Please refer to Figure 17, the muriatic chemical vapor deposition method in described reducing metal is carried out in muriatic the first reaction chamber 410 in reducing metal, muriatic the first reaction chamber 410 in described reducing metal comprises: the first base station 401, for the wafer 403 of placing tunnel to be formed insulation material layer; Be positioned at the clamping device (not shown) of described the first base station 401 tops, be used for clamping metallic plate 405.
Please continue with reference to figure 5, described the first metal material layer 303 is used for follow-up and the second metal material layer, the 3rd film form the fixed magnetic material layer jointly.The material of described the first metal material layer 303 is certain metal in the fixed magnetic material layer of follow-up formation, usually adopts CoFe or CoFeB as the material of fixed magnetic material layer.In an embodiment of the present invention, the material of described fixed magnetic material layer is CoFeB, and the material of described the first metal material layer 303 is cobalt (Co).
Due to the muriatic chemical vapor deposition method in described reducing metal, actual is that the metal transfer in described the first metallic plate has been arrived bottom electrode layer 301 surfaces in opening 304, has formed the first metal material layer 303.Therefore, the material of described the first metallic plate selects follow the selection of material in the first metal material layer 303, is certain metal in the fixed magnetic material layer of follow-up formation.In an embodiment of the present invention, the material of described the first metallic plate is Co.
For the ease of bottom electrode layer 301 surface formation the first metal material layers 303 in described opening 304, described the first metallic plate 405 is placed on the top of described opening 304, directly over being preferably.And the size of described the first metallic plate 405 is greater than the size of described opening 304.
Need to prove, usually wafer (substrate 300) surface has a plurality of openings 304, in order to form several magnetic tunnel-junctions, the area of the described opening that the size of described the first metallic plate 405 can have according to crystal column surface is decided, and perhaps selects the metallic plate 405 of suitable dimension according to the size of wafer.
Please continue with reference to Figure 17, the chlorine of described plasma state is in the interior formation of plasma cavity 407, described plasma cavity 407 is connected with source coil 408, the electric power that described source coil 408 receives from power supply, produce uniform plasma, the uniform plasma that described plasma cavity 407 reception sources coils 408 produce, oxidation chlorine makes it become plasma state.For making the structure that forms device compacter, in embodiments of the invention, described source coil 408 is arranged on the surface of the first reaction chamber 410 roofs.
Usually, the process parameters range when forming described the first metal material layer 303 is: frequency is 2-4MHz, and power is 200-500W, and pressure is 0.01-0.1Torr, and temperature is 250-350 ℃, Cl
2Flow when being 500-2000sccm, the quality of the first metal material layer 303 of formation is good, surfacing.
Technological parameter when in an embodiment of the present invention, forming described the first metal material layer 303 is: frequency is 2.7MHz, and power is 300W, and pressure is 0.05Torr, and temperature is 300 ℃, Cl
2Flow be 500sccm.
Please in conjunction with reference to figure 5 and Figure 17, in embodiments of the invention, the muriatic chemical vapor deposition method in described employing reducing metal, the surperficial concrete steps that form the first metal material layers 303 of bottom electrode layer 301 at described opening 304 comprise: chlorine by plasma, forms the chlorine of plasma state in plasma cavity 407; The chlorine of described plasma state is by Ar, He or N as carrier
2Bring in the first reaction chamber 510; Chlorine at first with the first metallic plate 405 of described plasma state reacts, and forms the cobalt chloride (CoCl) of gaseous state; Cobalt in the cobalt chloride of described gaseous state combines with the material on bottom electrode layer 301 surfaces, in described bottom electrode layer 301 formation intermediate layers, surface; The cobalt chloride of described gaseous state continues and described intermediate layer reacts, at bottom electrode layer 301 surface formation the first metal material layers 303.
The inventor finds, it is slower that the chlorine of described plasma state enters the speed of the first reaction chamber 410, the speed that enters the first reaction chamber 410 in order to accelerate it, when passing into the chlorine of described plasma state to described the first reaction chamber 410, also comprise: pass into inert gas as the carrier of the chlorine of plasma state, described inert gas is Ar, He or N
2The range of flow of described inert gas is: 500-3000sccm.In an embodiment of the present invention, the flow of described inert gas is 1000sccm.
Consider if the thickness of described the first metal material layer 303 is too large, even extend annealing time when subsequent anneal is processed, also be difficult to form the fixed magnetic material layer that each homogeneous chemical composition distributes, quality and the magnetic of the fixed magnetic material layer of formation are relatively poor.Therefore, for quality and the magnetic of the fixed magnetic material layer that makes follow-up formation are good, the thickness of the first metal material layer 303 less than
In an embodiment of the present invention, the thickness of the first metal material layer 303 is
Need to prove, for the better quality of the fixed magnetic material layer that makes follow-up formation, after forming described the first metal material layer 303, before forming the second metal material layer, also comprise: purified treatment is carried out on described the first metal material layer 303 surfaces.
Described purified treatment is carried out in the second reaction chamber 450, and described the second reaction chamber 450 comprises: comprising: the second base station 409 is used for placing the wafer 411 that has formed the first metal material layer 303; Be positioned at the gas tip 413 of described the second base station 409 tops, have some apertures (not shown) in described gas tip 413, be used for the passage when passing into gas, and can make inert gas Ar, He or the N that passes in the present embodiment
2Stepless action is removed the impurity of crystal column surface in crystal column surface.And for the ease of regulating the flow of inert gas in the second reaction chamber 450, described the second reaction chamber 450 also comprises: the flow controller (not shown) of regulating inert gas flow.
The concrete grammar of described purified treatment is: pass into the inert gas that flow is 500-3000sccm in the second reaction chamber 450, for example Ar, He or N
2, remove the impurity on described the first metal material layer 303 surfaces.
Please refer to Fig. 6, adopt the muriatic chemical vapor deposition method in reducing metal, form the second metal material layer 305 that covers described the first metal material layer 303 surfaces.
Described the second metal material layer 305 is used for follow-up and the common fixed magnetic material layer that forms of the first metal material layer 303.The material of described the second metal material layer 305 is certain metal in the fixed magnetic material layer of follow-up formation, and the material of described the second metal material layer 305 is different from the material of the first metal material layer 303.In an embodiment of the present invention, the material of described the second metal material layer 305 is iron (Fe).
Need to prove, in other embodiments of the invention, the material that can be also described the first metal material layer 303 is Fe, and the material of the second metal material layer 305 is Co.
Same, when forming the magnetic material layer of stereochemical structure due to the physical gas-phase deposition (PVD) that adopts prior art, not only need to increase extra technique, and the magnetic tunnel-junction that forms is second-rate, the performance of the final magnetic memory that forms is affected.In embodiments of the invention, the formation technique of the second metal material layer 305 is identical with the formation technique of the first metal material layer 303, is the muriatic chemical vapor deposition method in reducing metal (MCR-CVD).
For the performance of the fixed magnetic material layer of follow-up formation better, the thickness of described the second metal material layer 305 less than
In an embodiment of the present invention, the thickness of the second metal material layer 305 is
Need to prove, specifically method, step and the technological parameter about forming described the second metal material layer 305, please refer to the method, step and the technological parameter that form the first metal material layer 303 in the embodiment of the present invention, do not repeat them here.
Need to prove, after the second metal material layer 305 forms, before forming the 3rd film, also comprise: purified treatment is carried out on the surface to described the second metal material layer 305, specifically please refer in the embodiment of the present invention method to the first metal material layer 303 purified treatment.
Please refer to Fig. 7, adopt atom layer deposition process, form the 3rd film 307 that covers described the second metal material layer 305 surfaces.
When forming the 3rd film 307 of stereochemical structure due to the physical gas-phase deposition (PVD) that adopts prior art, surface quality is relatively poor, also need to increase extra chemico-mechanical polishing or etching technics, and the material of the 3rd film 307 is nonmetal, can't adopt the muriatic chemical vapor deposition method in reducing metal to form.
After further research, the inventor finds, can adopt atom layer deposition process (Atomic LayerDeposition, ALD) to form the 3rd film 307, and the quality of the 3rd film 307 of formation is better, can satisfy the requirement of the magnetic tunnel-junction of stereochemical structure.In an embodiment of the present invention, because the material of the fixed magnetic material layer of follow-up formation is CoFeB, the source gas that adopts when forming described the 3rd film 307 is B2H6, and the material of the 3rd film of formation is B.
The process parameters range that described atom layer deposition process forms the 3rd film 307 comprises: temperature is 250-350 ℃; Pressure is 0.01-0.1Torr; The gas flow of source gas is 200-1000sccm.In an embodiment of the present invention, the technological parameter of formation the 3rd film 307 is: temperature is 300 ℃, and pressure is 0.05Torr, and the gas flow of source gas is 500sccm.
Same, during for subsequent technique, the first metal material layer 303, the second metal material layer 305, the 3rd film 307 can evenly spread, and form the good fixed magnetic material layer of quality and performance, and the thickness of described the 3rd film 307 can not be too large, usually less than
In an embodiment of the present invention, the thickness of the 3rd film 307 is
In an embodiment of the present invention, can form satisfactory fixed magnetic material layer after first metal material layer 303 of formation, the second metal material layer 305, the 3rd film 307.
need to prove, in other embodiments of the invention, thickness requirement for the fixed magnetic material layer can be different, therefore can also repeat repeatedly and " adopt the muriatic chemical vapor deposition method in reducing metal to form the first metal material layer, be positioned at second metal material layer on described the first metal material layer surface, adopt atom layer deposition process to form to cover the 3rd film on described the second metal material layer surface ", form a plurality of described the first metal material layers, the second metal material layer, the structure of the 3rd stacks of thin films, be beneficial to the thickness of the fixed magnetic material layer that follow-up formation satisfies the demands.
Need to prove, in order to remove the impurity on each layer surface, after every formation layer of metal layer or film, all described metal level or film surface are carried out purified treatment.
Please refer to Fig. 8, described the first metal material layer, the second metal material layer, the 3rd film are carried out annealing in process, form fixed magnetic material layer 308.
Described annealing in process, be used for making the first metal material layer, the second metal material layer, the 3rd film the counterdiffusion of atom phase, mix, form fixed magnetic material layer 308.Described annealing in process is carried out under 1 atmospheric pressure, specifically comprises: pass into inert gas Ar or He, and when temperature is 300 ℃-400 ℃, annealing duration 2-4 minute; Perhaps when temperature was 500 ℃-600 ℃, duration 8-15 second (S) annealed.
In an embodiment of the present invention, the technological parameter of described annealing in process is: 1 atmospheric pressure, 400 ℃ of temperature, annealing duration 3 minutes.
The material of the fixed magnetic material layer 308 that forms after described annealing in process is CoFeB, is used for the magnetic tunnel-junction of follow-up formation stereochemical structure.In the embodiment of the present invention, the thickness of the first metal material layer, the second metal material layer, the 3rd film is all identical, for
In the fixed magnetic material layer 308 that forms, the volume ratio of Co, Fe, B atom is 1: 1: 1, and the Performance and quality of the fixed magnetic material layer 308 of formation is good.
Need to prove, in other embodiments of the invention, can also form according to actual needs the first metal material layer, the second metal material layer, the 3rd film of different-thickness, to regulate the volume ratio of Co, Fe, B in fixed magnetic material layer 308, the method for the embodiment of the present invention can form the fixed magnetic material layer 308 of the volume ratio of different atoms more flexibly.
Need to prove, in other examples of first embodiment of the invention, when the material of described fixed magnetic material layer is CoFe, the formation method of described fixed magnetic material layer is: after forming the first metal material layer 303 and the second metal material layer 305, described the first metal material layer 303 and the second metal material layer 305 are carried out annealing treating process formation fixed magnetic material layer.The Method and process parameter of described annealing treating process please refer to the Method and process parameter about the first metal material layer 303, the second metal material layer 305 and the 3rd film 307 are annealed in first embodiment of the invention.
Please refer to Fig. 9, adopt the muriatic chemical vapor deposition method in reducing metal, form the tunnel metal level 309a that covers described fixed magnetic material layer 308.
Described tunnel metal level 309a is used for follow-up formation tunnel insulation material layer.The material of described tunnel metal level 309a is magnesium (Mg), strontium (Sr), barium (Ba) or radium (Ra) etc.The formation method of described tunnel metal level 309a is similar to the method that forms the first metal material layer, the process parameters range that forms described tunnel metal level 309a is: frequency is 2-4MHz, and power is 200-500W, and pressure is 0.01-0.1Torr, temperature is 250-350 ℃, Cl
2Flow be 500-2000sccm.More about forming formation method and the step of described tunnel metal level 309a, please refer in first embodiment of the invention about forming formation method and the step of the first metal material layer.
Please refer to Figure 10, oxidation described tunnel metal level formation tunnel insulating material film 309b.
Described tunnel insulating material film 309b is used for follow-up formation tunnel insulation material layer, the free magnetism material layer of isolating described fixed magnetic material layer 308 and follow-up formation.The material of described tunnel insulating material film 309b is magnesium oxide (MgO), strontium oxide strontia (SrO), barium monoxide (BaO) or radium oxide (RaO).
The gas that the described tunnel of oxidation metal level passes into when forming tunnel insulating material film 309b is ozone (O
3) or the oxygen of plasma state.The technological parameter that the described tunnel of oxidation metal level forms tunnel insulating material film 309b comprises: the flow of ozone is 500-2000sccm, and pressure is 0.01-0.1Torr.In an embodiment of the present invention, the flow of ozone is 1000sccm, and pressure is 0.05Torr.
Need to prove, for the quality of the tunnel insulating material film 309b that makes formation good, the formation method of magnetic tunnel-junction of the present invention, also comprise: after fixed magnetic material layer 308 formation tunnel, surface metal levels, the described tunnel of oxidation metal level carries out purified treatment to described tunnel metal level before forming tunnel insulating material film 309b.
The method of described purified treatment comprises: pass into inert gas to described tunnel layer on surface of metal, for example Ar, He or N
2When the flow of described inert gas is 500-3000sccm, the impurity of described tunnel layer on surface of metal can be removed fully.In embodiments of the invention, the flow of described inert gas is 1000sccm.
The inventor finds, when the thickness of the tunnel of each formation metal level less than
The time, during subsequent oxidation tunnel metal level, oxygen can be with the material oxidation of whole tunnel metal level, and the quality of the tunnel insulating material film 309b of formation is good, can improve the quality of magnetic tunnel-junction, and the stability of magnetic memory increases.And in actual process, the thickness of the tunnel insulation material layer of magnetic memory has specific requirement, usually greater than
Therefore, in order to form the tunnel insulation material layer that satisfies process requirements, usually need to carry out repeatedly the step of step " the muriatic chemical vapor deposition method in reducing metal " and " oxidation ".The thickness of each tunnel insulating material film 309b that forms less than
Please refer to Figure 11, repeat the step of " the muriatic chemical vapor deposition method in reducing metal " and " oxidation ", form the tunnel insulating material film 309b of multiple-level stack, the tunnel insulating material film 309b of described multiple-level stack consists of tunnel insulation material layer 309 jointly.
Described tunnel insulation material layer 309 is for the free magnetism material layer 311 of isolating described fixed magnetic material layer 308 and follow-up formation.The thickness of described tunnel insulation material layer 309 equals the thickness sum of each tunnel insulating material film 309b.The material of described tunnel insulation material layer 309 is magnesium oxide (MgO), strontium oxide strontia (SrO), barium monoxide (BaO) or radium oxide (RaO).In an embodiment of the present invention, the material of described tunnel insulation material layer 309 is magnesium oxide.
Please refer to Figure 12, form the free magnetism material layer 311 that is positioned at described opening 304 and covers described tunnel insulation material layer 309.
The direction of magnetization of described free magnetism material layer 311 is able to programme, is used for that magnetic memory is carried out " writing " and " reads " operation.The material of described free magnetism material layer 311 is CoFe or CoFeB.The formation technique of described free magnetism material layer 311 is the muriatic chemical vapor deposition method in reducing metal, and its process parameters range comprises: frequency is 2-4MHz, and power is 200-500W, and pressure is 0.01-0.1Torr, and temperature is 250-350 ℃, Cl
2Flow be 500-2000sccm.
More formation technology and steps about free magnetism material layer 311, can with reference in first embodiment of the invention about the formation technology and step of fixed magnetic material layer 308, do not repeat them here.
Please continue with reference to Figure 12, form and to be positioned at described free magnetism material layer 311 surfaces, and fill the top electrode layer 313 of full described opening.
Described top electrode layer 313 is used for transmission of signal.The material of described top electrode layer 313 is the material that conducts electricity very well, for example tantalum (Ta), platinum manganese (PtMn) or ruthenium (Ru).The formation technique of described top electrode layer 313 is the muriatic chemical vapor deposition method in reducing metal, and its process parameters range comprises: frequency is 2-4MHz, and power is 200-500W, and pressure is 0.01-0.1Torr, and temperature is 250-350 ℃, Cl
2Flow be 500-2000sccm.
More formation technology and steps about top electrode layer 313, can with reference in first embodiment of the invention about the formation technology and step of fixed magnetic material layer 308, do not repeat them here.
After above-mentioned steps was completed, the manufacturing of magnetic tunnel-junction was completed.In the magnetic tunnel-junction of the embodiment of the present invention, the ratio of each composition in fixed magnetic material layer and free magnetism material layer, can regulate according to actual conditions, and mode is more flexible, and the quality of the magnetic tunnel-junction of formation is good, and reliability is high, and the performance of magnetic memory is good.
The second embodiment
Different from first embodiment of the invention, fixed magnetic material layer and free magnetism material layer in second embodiment of the invention directly adopt the muriatic chemical vapor deposition method in reducing metal to form, and need not to carry out annealing treating process again.
Please refer to Figure 13, Semiconductor substrate 500 is provided, be formed with opening 504 in described Semiconductor substrate 500; Formation is positioned at the bottom of described opening 504 and the bottom electrode layer 501 of partial sidewall.
Wherein, described Semiconductor substrate 500 is used to subsequent technique that technique platform is provided, and described opening 504 defines size and the position of magnetic tunnel-junction; Described bottom electrode layer 501 is used for transmission of signal, and the material of described bottom electrode layer 501 is the material that conducts electricity very well, for example tantalum (Ta), platinum manganese (PtMn) or ruthenium (Ru), and the formation technique of described bottom electrode layer 501 is depositing operation.
Please refer to Figure 14, directly adopt the muriatic chemical vapor deposition method in reducing metal, form the fixed magnetic material layer 508 that covers described bottom electrode layer 501 surfaces.
Described fixed magnetic material layer 508 is used for fixed magnetisation direction, and compares with the direction of magnetization of free magnetism material layer.The material of described fixed magnetic material layer 508 is Co
xFe
yB
z, wherein, 0＜x, y＜1,0≤z＜1, and x+y+z=1.
Different from the first embodiment of the present invention, when adopting the muriatic chemical vapor deposition method in reducing metal to form fixed magnetic material layer 508, the material of the metallic plate that adopts is no longer single certain metallic element that has, but has the composite material of Determination of multiple metal elements, is Co
xFe
yB
z, wherein, 0＜x, y＜1,0≤z＜1, and x+y+z=1.
The process parameters range of described fixed magnetic material layer 508 is: frequency is 2-4MHz, and power is 200-500W, and pressure is 0.01-0.1Torr, and temperature is 250-350 ℃, Cl
2Flow be 500-2000sccm.
More formation method and steps about fixed magnetic material layer 508 please refer to the first embodiment of the present invention, do not repeat them here.
Please refer to Figure 15, adopt atom layer deposition process, form the tunnel insulation material layer 509 that covers described fixed magnetic material layer 508 surfaces and described opening 504 sidewalls of part.
Described tunnel insulation material layer 509 is used for isolation fixed magnetic material layer 508 and free magnetism material layer.Described tunnel insulation material layer 509 be magnesium oxide (MgO), strontium oxide strontia (SrO), barium monoxide (BaO) or radium oxide (RaO).
In the second embodiment of the present invention, the formation technique of described tunnel insulation material layer 509 is atom layer deposition process (Atomic Layer Deposition, ALD).Material take the tunnel insulation material layer 509 that forms carries out exemplary illustrated as magnesium oxide as example.The first reactant that adopts during described atom layer deposition process is Mg (thd)
2, the second reactant is oxygen or ozone.
In the second embodiment of the present invention, the step of described atom layer deposition process comprises: the first solid-state reactant Mg (thd) is provided
2Heat described the first solid-state reactant Mg (thd)
2, make it become gaseous state; The first reactant Mg (thd) of gaseous state
2React with the second reactant oxygen or ozone, at fixed magnetic material layer 508 formation tunnel, surface insulation material layers 509.
The process parameters range of described atom layer deposition process is: temperature is more than or equal to 200 ℃, and the flow of oxygen or ozone is 300sccm, frequency 13-15MHz, and power is more than or equal to 200W.
In the second embodiment of the present invention, the tunnel insulation material layer 509 cover part opening sidewalls that adopt atom layer deposition process to form, the better effects if of tunnel insulation material layer 509 isolation fixed magnetic material layers 408 and free magnetism material layer, and the quality of the tunnel insulation material layer 509 that forms is good, forms technique simple.
Need to prove, in other embodiments of the invention, described tunnel insulation material layer 509 also can adopt the formation method of tunnel insulation material layer in first embodiment of the invention to form, and does not repeat them here.
Please refer to Figure 16, form the free magnetism material layer 511 that is positioned at described opening and covers described tunnel insulation material layer 509; Formation is positioned at described free magnetism material layer 511 surfaces, and fills the top electrode layer 513 of full described opening.
The direction of magnetization of described free magnetism material layer 511 is able to programme, is used for that magnetic memory is carried out " writing " and " reads " operation.The material of described free magnetism material layer 511 is CoFe or CoFeB.Described free magnetism material layer 511 can adopt the formation method as fixed magnetic material layer 508 in second embodiment of the invention to form, and also can adopt the formation method as fixed magnetic material layer in first embodiment of the invention to form, and does not repeat them here.
Described top electrode layer 513 is used for transmission of signal.The material of described top electrode layer 513 is the material that conducts electricity very well, for example tantalum (Ta), platinum manganese (PtMn) or ruthenium (Ru).The formation technique of described top electrode layer 513 is the muriatic chemical vapor deposition method in reducing metal, and its process parameters range comprises: frequency is 2-4MHz, and power is 200-500W, and pressure is 0.01-0.1Torr, and temperature is 250-350 ℃, Cl
2Flow be 500-2000sccm.
More formation technology and steps about top electrode layer 513, can with reference in first embodiment of the invention about the formation technology and step of fixed magnetic material layer, do not repeat them here.
After above-mentioned steps is completed, completing of the magnetic tunnel-junction of second embodiment of the invention, in the fixed magnetic material layer of the magnetic tunnel-junction of formation and magnetic material layer, the ratio of each composition is fixed, and the isolation effect of tunnel insulation material layer is good, formation technique is simple, and processing step is few.
To sum up, described fixed magnetic material layer, tunnel insulation material layer and free magnetism material layer all are positioned at opening, and the sidewall of cover part opening, the surface area of the magnetic tunnel-junction that is formed by described fixed magnetic material layer, tunnel insulation material layer and free magnetism material layer in unit space increases, follow-up contact area with top electrode layer and bottom electrode layer increases, the drive current of magnetic memory increases, and performance is better.
Further, directly adopt the muriatic chemical vapor deposition method in reducing metal, bottom and partial sidewall at opening form fixed magnetic material layer, free magnetism material layer and tunnel insulation material layer, processing step is simple, the quality of above-mentioned each layer that forms is good, the loss that when having avoided chemico-mechanical polishing or etching technics, Semiconductor substrate and magnetic tunnel-junction has been caused has improved the performance of magnetic memory.
The mode that adopts the muriatic chemical vapor deposition method in reducing metal and annealing treating process to combine, form fixed magnetic material layer and/or free magnetism material layer, can adjust flexibly according to actual needs the ratio of each composition in fixed magnetic material layer and/or free magnetism material layer, mode is more flexible, and the fixed magnetic material layer that forms and/or the quality of free magnetism material layer are good, and the performance of magnetic memory is good.
Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible change and modification to technical solution of the present invention; therefore; every content that does not break away from technical solution of the present invention; to any simple modification, equivalent variations and modification that above embodiment does, all belong to the protection range of technical solution of the present invention according to technical spirit of the present invention.
Claims (24)
1. a magnetic tunnel-junction, is characterized in that, comprising:
Semiconductor substrate is positioned at the opening of described Semiconductor substrate;
The fixed magnetic material layer is positioned at bottom and the partial sidewall of described opening;
The tunnel insulation material layer covers the sidewall of described fixed magnetic material layer and part opening;
The free magnetism material layer is positioned at described opening and covers described tunnel insulation material layer.
2. magnetic tunnel-junction as claimed in claim 1, is characterized in that, the material of described fixed magnetic material layer is CoFe or CoFeB; The material of described free magnetism material layer is CoFe or CoFeB.
3. the structure of magnetic tunnel-junction as claimed in claim 1, is characterized in that, the material of described tunnel insulation material layer is magnesium oxide, strontium oxide strontia, barium monoxide or radium oxide.
4. magnetic tunnel-junction as claimed in claim 1, is characterized in that, also comprises: bottom electrode layer is positioned at bottom and the partial sidewall of described opening, the described bottom electrode layer of described fixed magnetic layer of material covers; Top electrode layer covers described free magnetism material layer, and flushes with described Semiconductor substrate.
5. magnetic tunnel-junction as claimed in claim 4, is characterized in that, the material of described bottom electrode layer is Ta, PtMn or Ru; The material of described top electrode layer is Ta, PtMn or Ru.
6. the formation method of a magnetic tunnel-junction comprises:
Semiconductor substrate is provided, is formed with opening in described Semiconductor substrate;
It is characterized in that, also comprise:
Formation is positioned at the bottom of described opening and the fixed magnetic material layer of partial sidewall;
Form the tunnel insulation material layer of the sidewall that covers described fixed magnetic material layer and part opening;
Formation is positioned at described opening and covers the free magnetism material layer of described tunnel insulation material layer.
7. the formation method of magnetic tunnel-junction as claimed in claim 6, is characterized in that, the formation technique of described fixed magnetic material layer and free magnetism material layer comprises the muriatic chemical vapor deposition method in reducing metal.
8. the formation method of magnetic tunnel-junction as claimed in claim 7, is characterized in that, the technological parameter of the muriatic chemical vapor deposition method in described reducing metal comprises: frequency is 2-4MHz, power is 200-500W, pressure is 0.01-0.1Torr, and temperature is 250-350 ℃, Cl
2Flow be 500-2000sccm.
9. the formation method of magnetic tunnel-junction as claimed in claim 7, is characterized in that, the step of the muriatic chemical vapor deposition method in described reducing metal is: metallic plate is provided, and described metallic plate is placed on above opening; The chlorine of plasma state and described metallic plate react, and form the metal chloride of gaseous state; Metal in the metal chloride of described gaseous state combines with the material of open bottom, forms the intermediate layer; The metal chloride of described gaseous state and the reaction of described intermediate layer form fixed magnetic material layer and/or free magnetism material layer in described open bottom.
10. the formation method of magnetic tunnel-junction as claimed in claim 9, is characterized in that, also comprises: pass into inert gas as the carrier of the chlorine of plasma state.
11. the formation method of magnetic tunnel-junction as claimed in claim 10 is characterized in that, described inert gas is Ar, He or N
2
12. the formation method of magnetic tunnel-junction as claimed in claim 10 is characterized in that, the flow of described inert gas is 500-3000sccm.
13. the formation method of magnetic tunnel-junction as claimed in claim 7 is characterized in that, the formation technique of described fixed magnetic material layer and/or free magnetism material layer also comprises: annealing treating process.
14. the formation method of magnetic tunnel-junction as claimed in claim 13 is characterized in that, the technological parameter of described annealing treating process comprises: 1 atmospheric pressure, and inert gas Ar or He, temperature is 300 ℃-400 ℃, annealing duration 2-4 minute; Perhaps 1 atmospheric pressure, inert gas Ar or He, temperature is 500 ℃-600 ℃, annealing duration 8-15 second.
15. the formation method of magnetic tunnel-junction as claimed in claim 6 is characterized in that, the formation method of described tunnel insulation material layer is: adopt the muriatic chemical vapor deposition method in reducing metal, form the metal level that is positioned at described fixed magnetic material surface; The described metal level of oxidation forms the tunnel insulation material layer.
16. the formation method of magnetic tunnel-junction as claimed in claim 15 is characterized in that, the technological parameter of the muriatic chemical vapor deposition method in described reducing metal comprises: frequency is 2-4MHz, power is 200-500W, pressure is 0.01-0.1Torr, and temperature is 250-350 ℃, Cl
2Flow be 500-2000sccm.
17. the formation method of magnetic tunnel-junction as claimed in claim 15 is characterized in that, the process parameters range of the described metal level of oxidation is: the flow of the oxygen of ozone or plasma state is 500-2000sccm, and pressure is 0.01-0.1Torr.
18. the formation method of magnetic tunnel-junction as claimed in claim 15 is characterized in that, also comprises: the carrier of the chlorine of plasma state when passing into inert gas as the muriatic chemical vapor deposition method in reducing metal.
19. the formation method of magnetic tunnel-junction as claimed in claim 18 is characterized in that, described inert gas is Ar, He or N
2, flow is 500-3000sccm.
20. the formation method of magnetic tunnel-junction as claimed in claim 6 is characterized in that, the formation method of described tunnel insulation material layer is: adopt atom layer deposition process to form the tunnel insulation material layer that is positioned at described fixed magnetic material surface.
21. the formation method of magnetic tunnel-junction as claimed in claim 20 is characterized in that, the first reactant that adopts during described atom layer deposition process is Mg (thd)
2, the second reactant is oxygen or ozone.
22. the formation method of magnetic tunnel-junction as claimed in claim 20, it is characterized in that, the process parameters range of described atom layer deposition process is: temperature is more than or equal to 200 ℃, and the flow of oxygen or ozone is 300sccm, frequency 13-15MHz, power is more than or equal to 200W.
23. the formation method of magnetic tunnel-junction as claimed in claim 6 is characterized in that, also comprises: formation is positioned at the bottom of described opening and the bottom electrode layer of partial sidewall, and it is surperficial that described fixed magnetic material layer is positioned at described bottom electrode layer; Formation is positioned at described free magnetism material surface, and fills the top electrode layer of full described opening.
24. the formation method of magnetic tunnel-junction as claimed in claim 23 is characterized in that, the formation technique of described bottom electrode layer and top electrode layer is the muriatic chemical vapor deposition method in reducing metal.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2015027808A1 (en) * | 2013-08-28 | 2015-03-05 | 华为技术有限公司 | Method and device for preparing magnetic storage track, and magnetic storage track |
| CN104425707A (en) * | 2013-08-28 | 2015-03-18 | 华为技术有限公司 | Method and device for preparing magnetic storage track, and magnetic storage track |
| CN104425707B (en) * | 2013-08-28 | 2017-11-17 | 华为技术有限公司 | A kind of preparation method of magnetic storage track, equipment and magnetic storage track |
| CN105097775A (en) * | 2015-04-20 | 2015-11-25 | 宁波时代全芯科技有限公司 | Memory body structure and preparation method thereof |
| CN105097775B (en) * | 2015-04-20 | 2017-12-29 | 江苏时代全芯存储科技有限公司 | Memory structure and its preparation method |
| CN107833873A (en) * | 2015-04-20 | 2018-03-23 | 江苏时代全芯存储科技有限公司 | Memory structure and its preparation method |
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