CN104425636B - 太阳能电池纹理化 - Google Patents
太阳能电池纹理化 Download PDFInfo
- Publication number
- CN104425636B CN104425636B CN201410416203.9A CN201410416203A CN104425636B CN 104425636 B CN104425636 B CN 104425636B CN 201410416203 A CN201410416203 A CN 201410416203A CN 104425636 B CN104425636 B CN 104425636B
- Authority
- CN
- China
- Prior art keywords
- mask material
- liquid
- mask
- pipeline
- method described
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 claims abstract description 225
- 239000007788 liquid Substances 0.000 claims abstract description 89
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 46
- 230000008569 process Effects 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000005452 bending Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims 5
- 238000000059 patterning Methods 0.000 claims 2
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 230000000873 masking effect Effects 0.000 abstract description 101
- 238000007639 printing Methods 0.000 abstract description 49
- 239000004642 Polyimide Substances 0.000 abstract description 10
- 229920001721 polyimide Polymers 0.000 abstract description 10
- 238000003491 array Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 100
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 239000010410 layer Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- 230000008901 benefit Effects 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000010948 rhodium Substances 0.000 description 6
- 229910052741 iridium Inorganic materials 0.000 description 5
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 5
- 229910052703 rhodium Inorganic materials 0.000 description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005459 micromachining Methods 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 230000007723 transport mechanism Effects 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001093 Zr alloy Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- ZSJFLDUTBDIFLJ-UHFFFAOYSA-N nickel zirconium Chemical compound [Ni].[Zr] ZSJFLDUTBDIFLJ-UHFFFAOYSA-N 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910015202 MoCr Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 238000000979 dip-pen nanolithography Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- -1 metal 1/metal 2 Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
- Micromachines (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/023,423 US8951825B1 (en) | 2013-09-10 | 2013-09-10 | Solar cell texturing |
| US14/023423 | 2013-09-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104425636A CN104425636A (zh) | 2015-03-18 |
| CN104425636B true CN104425636B (zh) | 2018-06-12 |
Family
ID=51494169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410416203.9A Expired - Fee Related CN104425636B (zh) | 2013-09-10 | 2014-08-21 | 太阳能电池纹理化 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8951825B1 (enExample) |
| EP (1) | EP2846352B1 (enExample) |
| JP (1) | JP6383225B2 (enExample) |
| KR (2) | KR20150029552A (enExample) |
| CN (1) | CN104425636B (enExample) |
| TW (1) | TWI641159B (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8870950B2 (en) | 2009-12-08 | 2014-10-28 | Mitral Tech Ltd. | Rotation-based anchoring of an implant |
| TWI550886B (zh) * | 2015-07-10 | 2016-09-21 | 國立屏東科技大學 | 矽基板表面粗糙化方法 |
| RU2019104002A (ru) | 2016-07-22 | 2020-08-24 | Тоа Эйо Лтд. | Терапевтическое средство от глаукомы |
| USD810675S1 (en) * | 2016-08-12 | 2018-02-20 | Solaria Corporation | Solar cell article |
| USD815028S1 (en) * | 2016-08-12 | 2018-04-10 | Solaria Corporation | Solar cell article |
| USD810676S1 (en) * | 2016-08-12 | 2018-02-20 | Solaria Corporation | Solar cell article |
| USD817264S1 (en) * | 2016-08-12 | 2018-05-08 | Solaria Corporation | Solar cell article |
| USD815029S1 (en) * | 2016-08-12 | 2018-04-10 | Solaria Corporation | Solar cell article |
| JP7449876B2 (ja) * | 2018-11-16 | 2024-03-14 | イルミナ インコーポレイテッド | 流体カートリッジ用積層流体回路 |
| CN111417299B (zh) * | 2020-04-13 | 2021-03-23 | 温州职业技术学院 | 电路基板主体制作方法 |
| KR102352056B1 (ko) * | 2020-11-04 | 2022-01-14 | 한국기술교육대학교 산학협력단 | 니들이 배열 삽입된 코팅용 헤드 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101657906A (zh) * | 2007-02-15 | 2010-02-24 | 麻省理工学院 | 具有纹理表面的太阳能电池 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3842189A (en) | 1973-01-08 | 1974-10-15 | Rca Corp | Contact array and method of making the same |
| IT1156090B (it) * | 1982-10-26 | 1987-01-28 | Olivetti & Co Spa | Metodo e dispositivo di stampa a getto d inchiostro |
| NL9301259A (nl) * | 1993-07-19 | 1995-02-16 | Oce Nederland Bv | Inktstraalschrijfkoppen-array. |
| US5613861A (en) | 1995-06-07 | 1997-03-25 | Xerox Corporation | Photolithographically patterned spring contact |
| FR2741194B1 (fr) | 1995-11-13 | 1998-01-30 | Photowatt Int | Cellule solaire comportant du silicium multicristallin et procede de texturisation de la surface du silicium multicristallin de type p |
| US6709699B2 (en) * | 2000-09-27 | 2004-03-23 | Kabushiki Kaisha Toshiba | Film-forming method, film-forming apparatus and liquid film drying apparatus |
| KR100378016B1 (ko) | 2001-01-03 | 2003-03-29 | 삼성에스디아이 주식회사 | 태양 전지용 반도체 기판의 텍스처링 방법 |
| US6872320B2 (en) * | 2001-04-19 | 2005-03-29 | Xerox Corporation | Method for printing etch masks using phase-change materials |
| JP4530662B2 (ja) | 2001-11-29 | 2010-08-25 | トランスフォーム ソーラー ピーティーワイ リミテッド | 半導体テクスチャ化プロセス |
| JP2003224285A (ja) * | 2002-01-31 | 2003-08-08 | Sharp Corp | 太陽電池の製造方法および製造装置 |
| US7241420B2 (en) * | 2002-08-05 | 2007-07-10 | Palo Alto Research Center Incorporated | Capillary-channel probes for liquid pickup, transportation and dispense using stressy metal |
| US8080221B2 (en) | 2002-08-05 | 2011-12-20 | Palo Alto Research Center Incorporated | Capillary-channel probes for liquid pickup, transportation and dispense using stressy metal |
| JP2004134494A (ja) * | 2002-10-09 | 2004-04-30 | Sharp Corp | 太陽電池の製造方法およびその製造装置 |
| JP2004148781A (ja) * | 2002-11-01 | 2004-05-27 | Canon Inc | 液体貯蔵容器 |
| JP2004158561A (ja) * | 2002-11-05 | 2004-06-03 | Sharp Corp | 太陽電池の製造方法 |
| US7563722B2 (en) | 2004-03-05 | 2009-07-21 | Applied Nanotech Holdings, Inc. | Method of making a textured surface |
| KR100588015B1 (ko) * | 2004-06-28 | 2006-06-09 | 엘지.필립스 엘시디 주식회사 | 액정표시장치의 불순물제거 장치 |
| US7356920B2 (en) | 2004-11-12 | 2008-04-15 | Palo Alto Research Center Incorporated | Micro-machined structure production using encapsulation |
| US7325987B2 (en) | 2004-12-14 | 2008-02-05 | Palo Alto Research Center Incorporated | Printing method using quill-jet |
| US7325903B2 (en) | 2004-12-14 | 2008-02-05 | Palo Alto Research Center Incorporated | Quill-jet printer |
| US20090139868A1 (en) * | 2007-12-03 | 2009-06-04 | Palo Alto Research Center Incorporated | Method of Forming Conductive Lines and Similar Features |
| US8129212B2 (en) | 2008-03-25 | 2012-03-06 | Applied Materials, Inc. | Surface cleaning and texturing process for crystalline solar cells |
| US8288195B2 (en) | 2008-11-13 | 2012-10-16 | Solexel, Inc. | Method for fabricating a three-dimensional thin-film semiconductor substrate from a template |
| US20100130014A1 (en) * | 2008-11-26 | 2010-05-27 | Palo Alto Research Center Incorporated | Texturing multicrystalline silicon |
| US8309389B1 (en) | 2009-09-10 | 2012-11-13 | Sionyx, Inc. | Photovoltaic semiconductor devices and associated methods |
| JP5404570B2 (ja) * | 2010-09-24 | 2014-02-05 | 株式会社東芝 | 滴下制御方法および滴下制御装置 |
| JP5955545B2 (ja) * | 2011-12-15 | 2016-07-20 | 東京応化工業株式会社 | マスク材組成物、及び不純物拡散層の形成方法 |
| JP5994259B2 (ja) * | 2012-01-30 | 2016-09-21 | セイコーエプソン株式会社 | 液体噴射装置 |
| JP5813603B2 (ja) * | 2012-09-04 | 2015-11-17 | 株式会社東芝 | インプリント装置およびインプリント方法 |
-
2013
- 2013-09-10 US US14/023,423 patent/US8951825B1/en active Active
-
2014
- 2014-08-21 CN CN201410416203.9A patent/CN104425636B/zh not_active Expired - Fee Related
- 2014-08-26 TW TW103129428A patent/TWI641159B/zh not_active IP Right Cessation
- 2014-09-02 KR KR1020140116129A patent/KR20150029552A/ko not_active Withdrawn
- 2014-09-03 KR KR1020140116828A patent/KR102103158B1/ko not_active Expired - Fee Related
- 2014-09-08 JP JP2014182571A patent/JP6383225B2/ja not_active Expired - Fee Related
- 2014-09-09 EP EP14184131.2A patent/EP2846352B1/en not_active Not-in-force
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101657906A (zh) * | 2007-02-15 | 2010-02-24 | 麻省理工学院 | 具有纹理表面的太阳能电池 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102103158B1 (ko) | 2020-06-01 |
| KR20150029552A (ko) | 2015-03-18 |
| TWI641159B (zh) | 2018-11-11 |
| JP2015056663A (ja) | 2015-03-23 |
| EP2846352B1 (en) | 2020-12-09 |
| CN104425636A (zh) | 2015-03-18 |
| KR20150029558A (ko) | 2015-03-18 |
| TW201511322A (zh) | 2015-03-16 |
| EP2846352A1 (en) | 2015-03-11 |
| US8951825B1 (en) | 2015-02-10 |
| JP6383225B2 (ja) | 2018-08-29 |
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