CN104425530B - 放射线摄像装置和放射线摄像显示系统 - Google Patents

放射线摄像装置和放射线摄像显示系统 Download PDF

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Publication number
CN104425530B
CN104425530B CN201410398317.5A CN201410398317A CN104425530B CN 104425530 B CN104425530 B CN 104425530B CN 201410398317 A CN201410398317 A CN 201410398317A CN 104425530 B CN104425530 B CN 104425530B
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China
Prior art keywords
gate electrode
layer
radiation
pixel
imaging apparatus
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Expired - Fee Related
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CN201410398317.5A
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English (en)
Chinese (zh)
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CN104425530A (zh
Inventor
山田泰弘
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Publication of CN104425530A publication Critical patent/CN104425530A/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1892—Direct radiation image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Thin Film Transistor (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201410398317.5A 2013-08-20 2014-08-13 放射线摄像装置和放射线摄像显示系统 Expired - Fee Related CN104425530B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013170332A JP6166128B2 (ja) 2013-08-20 2013-08-20 放射線撮像装置および放射線撮像表示システム
JP2013-170332 2013-08-20

Publications (2)

Publication Number Publication Date
CN104425530A CN104425530A (zh) 2015-03-18
CN104425530B true CN104425530B (zh) 2019-02-15

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Country Status (3)

Country Link
US (1) US9536921B2 (enExample)
JP (1) JP6166128B2 (enExample)
CN (1) CN104425530B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020170658A1 (ja) * 2019-02-22 2020-08-27 パナソニックＩｐマネジメント株式会社 撮像装置
KR102787524B1 (ko) * 2019-05-29 2025-03-26 엘지디스플레이 주식회사 디지털 엑스레이 검출기와 이를 포함하는 디지털 엑스레이 검출 장치 및 이의 제조 방법
CN113809163B (zh) * 2021-09-17 2023-11-24 武汉天马微电子有限公司 金属氧化物晶体管、显示面板及显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102196194A (zh) * 2010-02-25 2011-09-21 索尼公司 放射线摄像装置和驱动放射线摄像装置的方法
CN102820337A (zh) * 2011-06-07 2012-12-12 索尼公司 放射线摄像装置、放射线摄像显示系统和晶体管

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Publication number Priority date Publication date Assignee Title
JP2586508B2 (ja) * 1987-08-31 1997-03-05 ソニー株式会社 Ｍｏｓトランジスタ
JPH10173192A (ja) * 1996-12-09 1998-06-26 Sharp Corp 薄膜トランジスタおよびその製造方法
JP4008133B2 (ja) * 1998-12-25 2007-11-14 株式会社半導体エネルギー研究所 半導体装置
JP4266656B2 (ja) 2003-02-14 2009-05-20 キヤノン株式会社 固体撮像装置及び放射線撮像装置
JP2005079283A (ja) * 2003-08-29 2005-03-24 Seiko Epson Corp 薄膜半導体装置及びその製造方法、電気光学装置、並びに電子機器
JP4633434B2 (ja) * 2004-10-18 2011-02-16 シャープ株式会社 半導体装置およびその製造方法
JP2007157986A (ja) * 2005-12-05 2007-06-21 Sharp Corp トランジスタを備えた装置
JP4355747B2 (ja) 2007-03-05 2009-11-04 キヤノン株式会社 光電変換装置及び光電変換システム並びにその駆動方法
WO2011074338A1 (ja) * 2009-12-17 2011-06-23 シャープ株式会社 半導体装置、アクティブマトリクス基板、及び表示装置
JP5512800B2 (ja) * 2010-04-16 2014-06-04 シャープ株式会社 半導体装置
JP2012146805A (ja) * 2011-01-12 2012-08-02 Sony Corp 放射線撮像装置、放射線撮像表示システムおよびトランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102196194A (zh) * 2010-02-25 2011-09-21 索尼公司 放射线摄像装置和驱动放射线摄像装置的方法
CN102820337A (zh) * 2011-06-07 2012-12-12 索尼公司 放射线摄像装置、放射线摄像显示系统和晶体管

Also Published As

Publication number Publication date
CN104425530A (zh) 2015-03-18
US9536921B2 (en) 2017-01-03
JP2015041629A (ja) 2015-03-02
US20150053865A1 (en) 2015-02-26
JP6166128B2 (ja) 2017-07-19

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Effective date of registration: 20160912

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Applicant after: SONY semiconductor solutions

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Applicant before: Sony Corp

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Granted publication date: 20190215

Termination date: 20200813

CF01 Termination of patent right due to non-payment of annual fee