CN104419979A - Heat field of single crystal furnace - Google Patents
Heat field of single crystal furnace Download PDFInfo
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- CN104419979A CN104419979A CN201310383462.1A CN201310383462A CN104419979A CN 104419979 A CN104419979 A CN 104419979A CN 201310383462 A CN201310383462 A CN 201310383462A CN 104419979 A CN104419979 A CN 104419979A
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- cylinder
- heat
- furnace
- heater
- single crystal
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Abstract
The invention belongs to the solar photovoltaic field and specifically relates to a heat field of a single crystal furnace, which is used for melting crystalline silicon in the single crystal furnace for growing crystalline silicon. The heat field comprises a furnace body, wherein a three-segment crucible is arranged in the furnace body, a heating device is arranged around the three-segment crucible, a heat insulation cylinder is arranged on the inner wall of the furnace body, a diversion cylinder is arranged above the three-segment crucible, the diversion cylinder is fixed on a heat insulation cover, the heat insulation cover is fixed on the furnace body, the heating device comprises a heating base fixed at the bottom of the furnace and an annular heater arranged on the heating base, the diversion cylinder comprises an inner diversion cylinder and an outer diversion cylinder, the heat insulation cylinder comprises an upper heat insulation cylinder and a lower heat insulation cylinder, the upper heat insulation cylinder is arranged on the outer side of the diversion cylinder, and the lower heat insulation cylinder is arranged on the outer side of the heater to the bottom of the furnace. The heat field provided by the invention has the advantages of improving the heat insulation effect in the furnace body, improving the heat utilization rate, saving the production cost, increasing the volume of the three-segment crucible and prolonging the service life of the heat field of the single crystal furnace.
Description
Technical field
The invention belongs to photovoltaic field, specifically for grow crystal silicon single crystal growing furnace in for the thermal field of the single crystal growing furnace of molten crystal silicon.
Background technology
Thermal field of single crystal furnace is made up of thermal field component and lagging material, and research data shows the thermal field of single crystal furnace of a set of Random Design, and about 50% of heater power is enough to maintain its long crystal bar part, and remaining energy all consumes in the environment.Change thermal field structure, adjustment performance of heat protective material, the thermograde of thermal field can be made reasonable, reduce the loss of heat, thus power when effectively reducing crystal pulling.
The thermal field of single crystal furnace generally used at present, isometrical power averaging reaches about 60KW, and yield rate is about 70%.On the one hand, too high crystal drawing power reduces the work-ing life of graphite piece, increases current consumption, the crystal pulling cost of silicon single crystal rod is increased, thus reduces the profit of solar monocrystalline silicon slice.On the other hand, the theoretical yield rate of crystal pulling can reach more than 80%, and existing thermal field structure easily produces disconnected rib in crystal pulling process, make whole excellent rate and yield rate on the low side, as can be seen from actual and theoretical difference, existing thermal field also has very large room for improvement.
Especially existing thermal field production cost is high, and work-ing life is low, can not meet the demand in market.
Summary of the invention
The technical problem to be solved in the present invention is: the problems such as the space how solving existing thermal field of single crystal furnace is little, work-ing life is short, be not incubated, and in order to solve this problem, proposes the thermal field of simple, the practical single crystal growing furnace of an a kind of structure.
Realize the technical scheme that the technical problem to be solved in the present invention adopts as follows:
The thermal field of single crystal growing furnace, it comprises body of heater, three lobe pots are provided with in body of heater, heating unit is provided with around three lobe pots, inboard wall of furnace body is provided with heat-preservation cylinder, guide shell is provided with above three lobe pots, guide shell is fixed on insulation cover, insulation cover is fixed on body of heater, described heating unit comprises the heated base being fixed on furnace bottom and the ring-shaped heater be located on heated base, described guide shell comprises inner draft tube and external flow guiding cylinder, heat-preservation cylinder comprises heat-preservation cylinder and lower heat-preservation cylinder, upper insulated tank is located at the outside of guide shell, lower heat-preservation cylinder is located at the outside of well heater to furnace bottom.
Described well heater comprises the some heating pieces be fixed on heated base.
Three described lobe pots are fixed in body of heater by the crucible pad of crucible bar and crucible boom end.
Advantage of the present invention is the heat insulation effect that improve in body of heater, improves heat utilization efficiency, saves production cost, adds the volume of three lobe pots, extends the work-ing life of thermal field of single crystal furnace.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
As shown in Figure 1, the thermal field of single crystal growing furnace, it comprises body of heater 1, three lobe pots 2 are provided with in body of heater 1, heating unit is provided with around three lobe pots 2, body of heater 1 inwall is provided with heat-preservation cylinder, guide shell is provided with above three lobe pots 2, guide shell is fixed on insulation cover 3, insulation cover 3 is fixed on body of heater 1, described heating unit comprises the heated base 4 being fixed on furnace bottom and the ring-shaped heater be located on heated base 4, described guide shell comprises inner draft tube 5 and external flow guiding cylinder 6, heat-preservation cylinder comprises heat-preservation cylinder 7 and lower heat-preservation cylinder 8, upper insulated tank 7 is located at the outside of guide shell, lower heat-preservation cylinder 8 is located at the outside of well heater to furnace bottom, well heater comprises the some heating pieces 9 be fixed on heated base 4, three lobe pots 2 are fixed in body of heater 1 by the crucible pad 11 of crucible bar 10 and crucible bar 10 end.
Claims (3)
1. the thermal field of single crystal growing furnace, it comprises body of heater, three lobe pots are provided with in body of heater, heating unit is provided with around three lobe pots, inboard wall of furnace body is provided with heat-preservation cylinder, guide shell is provided with above three lobe pots, guide shell is fixed on insulation cover, insulation cover is fixed on body of heater, described heating unit comprises the heated base being fixed on furnace bottom and the ring-shaped heater be located on heated base, described guide shell comprises inner draft tube and external flow guiding cylinder, heat-preservation cylinder comprises heat-preservation cylinder and lower heat-preservation cylinder, upper insulated tank is located at the outside of guide shell, lower heat-preservation cylinder is located at the outside of well heater to furnace bottom.
2. the thermal field of single crystal growing furnace according to claim 1, is characterized in that: described well heater comprises the some heating pieces be fixed on heated base.
3. the thermal field of single crystal growing furnace according to claim 1, is characterized in that: three described lobe pots are fixed in body of heater by the crucible pad of crucible bar and crucible boom end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310383462.1A CN104419979A (en) | 2013-08-28 | 2013-08-28 | Heat field of single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310383462.1A CN104419979A (en) | 2013-08-28 | 2013-08-28 | Heat field of single crystal furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104419979A true CN104419979A (en) | 2015-03-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310383462.1A Pending CN104419979A (en) | 2013-08-28 | 2013-08-28 | Heat field of single crystal furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104419979A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106319621A (en) * | 2016-09-22 | 2017-01-11 | 东莞市联洲知识产权运营管理有限公司 | Large-size czochralski silicon single crystal growth method |
-
2013
- 2013-08-28 CN CN201310383462.1A patent/CN104419979A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106319621A (en) * | 2016-09-22 | 2017-01-11 | 东莞市联洲知识产权运营管理有限公司 | Large-size czochralski silicon single crystal growth method |
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Legal Events
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| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150318 |