CN104409574A - Preparation method for solar cell with through hole structure - Google Patents
Preparation method for solar cell with through hole structure Download PDFInfo
- Publication number
- CN104409574A CN104409574A CN201410744428.7A CN201410744428A CN104409574A CN 104409574 A CN104409574 A CN 104409574A CN 201410744428 A CN201410744428 A CN 201410744428A CN 104409574 A CN104409574 A CN 104409574A
- Authority
- CN
- China
- Prior art keywords
- preparation
- solar cell
- laser
- insulation
- microns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 238000009413 insulation Methods 0.000 claims abstract description 28
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 20
- 238000009792 diffusion process Methods 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 5
- 238000004080 punching Methods 0.000 claims abstract description 4
- 235000008216 herbs Nutrition 0.000 claims description 4
- 238000005202 decontamination Methods 0.000 claims description 3
- 230000003588 decontaminative effect Effects 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 5
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000011712 cell development Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a preparation method for a solar cell with a through hole structure. The preparation method comprises the following steps: punching, texturing, performing double-side diffusion, performing edge etching, performing laser insulation, re-etching, removing impurity glass, coating, printing a back field and positive and negative electrodes, and sintering, wherein in the re-etching step, a tetramethylammonium hydroxide solution is adopted and the etching time is 1-10 minutes; the width of an insulated groove after the re-etching process is 70-90 microns. According to the preparation method, the laser insulation step is carried out before the printing step, so that the problems of difficult suction of the solar cell and inaccurate alignment caused by warpage of the solar cell are avoided, a gap between the back field and the negative electrode on the back surface does not need to be expanded to realize good insulation, and the problem of photoelectric conversion efficiency loss of the solar cell is solved. Therefore, the industrialized production demands are well met.
Description
Technical field
The present invention relates to a kind of preparation method with the solar cell of through-hole structure, belong to technical field of solar batteries.
Background technology
Conventional fossil fuel approach exhaustion day by day, in existing sustainable energy, solar energy is a kind of safe and reliable, economical and practical and green energy resource that is that easily obtain.Therefore, solar module obtains increasing concern, and high conversion efficiency, low cost are the main trend of solar cell development, is also the target that technical research person pursues.
In order to obtain higher photoelectric conversion efficiency, people investigated the solar cell with through-hole structure, as MWT solar cell.The existing preparation method with the solar cell of through-hole structure is as follows: punching-making herbs into wool-Double side diffusion-Ke Bian-go PSG-plated film-printing back surface field, positive and negative electrode sinter-laser insulation.The region that this preparation method covers with back side negative electrode in hole all forms diffusion junctions, and do not have special technological requirement to filling paste in hole, the electrocondution slurry of common process can be adopted to fill, and process window is wider; And through-hole wall and through hole electrode can form good ohmic contact, there is not electrical leakage problems in hole, improve the reliability of assembly.But, exactly because also through-hole wall and through hole electrode can form good ohmic contact, therefore, after the sintering, must laser isolation step be carried out, to form insulation tank between back of the body electric field and pore electrod, avoid the electrical leakage problems caused because of back of the body electric field and pore electrod conducting.
But practical application finds, after back surface field sintering, silicon chip generation warpage can be made, cause cell piece in follow-up laser insulation operation not easily to be adsorbed, also can bring the problem that laser positioning is inaccurate simultaneously.For the problems referred to above, existing method is the insulation tank (or be called gap, its width is generally 800 microns) increased between back of the body electric field and back side negative electrode, but the problem that the method can bring again battery efficiency to lose.
Therefore, develop a kind of preparation method easily with the solar cell of through-hole structure, be convenient to suitability for industrialized production, and avoid battery efficiency to lose as far as possible, there is positive realistic meaning.
Summary of the invention
Goal of the invention of the present invention is to provide a kind of preparation method with the solar cell of through-hole structure.
To achieve the above object of the invention, the technical solution used in the present invention is: a kind of preparation method with the solar cell of through-hole structure, comprise the steps: punching, making herbs into wool, Double side diffusion, quarter limit, laser insulation, return quarter, decontamination glass, plated film, printing back surface field and positive and negative electrode sinter;
Wherein, carve for described time and adopt tetramethyl ammonium hydroxide solution, etch period is 1 ~ 10 min; The width of the insulation tank of Hui Kehou is 70 ~ 90 microns, and its degree of depth is 30 ~ 70 microns.
For the problem described in background technology; before laser isolation step is put into print steps by the present invention; but; in actual applications; find to create new problem: the metallic conduction particle existed in printing process can stick on insulation tank; because the width of insulation tank is very little, PN region originally isolated after oversintering again by metal conduction, thus causes electric leakage.
For the problems referred to above, the present invention adopts Tetramethylammonium hydroxide (TMAH) solution to carry out back carving, the damage layer that one side removal laser and plasma etching bring, on the other hand by further for insulation tank broadening, metallic conduction particle is not easily sticked on insulation tank, solves metal conduction and the electrical leakage problems brought.
In addition, TMAH solution only etches at insulation tank and silicon chip edge position, and other positions can not be etched due to the protection of impurity glass (PSG), and therefore this time is carved step and be very easy to operate, without the need to additionally making protective film.
Preferably, the volumetric concentration of described tetramethyl ammonium hydroxide solution is 15% ~ 30%, and etch period is 3 ~ 8 min.
In technique scheme, the temperature of carving for described time is 70 ~ 100 degree.
In technique scheme, described laser insulation adopts the laser of 532nm, and after laser, the width of insulation tank is 60 ~ 80 microns, and the degree of depth is 20 ~ 60 microns.
Because technique scheme is used, the present invention compared with prior art has following advantages:
1, this invention exploits a kind of preparation method with the solar cell of through-hole structure, before laser isolation step is put into print steps, avoid the problem that the difficult and contraposition of the suction sheet brought because of cell piece warpage is forbidden, do not need to increase gap between back surface field and back side negative electrode to realize good insulation, also the problem of the cell photoelectric conversion efficiency loss brought thus is solved, the therefore demand of suitability for industrialized production preferably;
2, the present invention carries out back carving step after laser insulation, and the method can remove the damage of laser generation, can also, by insulation tank broadening, metallic conduction particle not easily be sticked on insulation tank, solves metal conduction and the electrical leakage problems that brings;
3, preparation method of the present invention in hole and back side negative electrode cover region all form diffusion junctions, do not have special technological requirement to filling paste in hole, the electrocondution slurry of common process can be adopted to fill, and process window is wider;
4, the through-hole wall of solar cell prepared of the present invention and through hole electrode can form good ohmic contact, there is not electrical leakage problems in hole, improve the reliability of assembly;
5, preparation method of the present invention is simple, and cost is lower, is suitable for applying.
Embodiment
Below in conjunction with embodiment, the present invention is further described.
Embodiment one
There is a preparation method for the solar cell of through-hole structure, comprise the steps: punching, making herbs into wool, Double side diffusion, quarter limit, laser insulation, return quarter, decontamination glass, plated film, printing back surface field and positive and negative electrode sinter;
Wherein, carve for described time and adopt tetramethyl ammonium hydroxide solution, the volumetric concentration of tetramethyl ammonium hydroxide solution is 20%, and etch period is 5 min; The width of the insulation tank of Hui Kehou is 80 microns, and the degree of depth is 40 microns.
Described laser insulation adopts the laser of 532nm, and after laser, the width of insulation tank is 70 microns, and the degree of depth is 30 microns.
Claims (4)
1. there is a preparation method for the solar cell of through-hole structure, it is characterized in that, comprise the steps: punching, making herbs into wool, Double side diffusion, quarter limit, laser insulation, return quarter, decontamination glass, plated film, printing back surface field and positive and negative electrode sinter;
Wherein, carve for described time and adopt tetramethyl ammonium hydroxide solution, etch period is 1 ~ 10 min; The width of the insulation tank of Hui Kehou is 70 ~ 90 microns, and its degree of depth is 30 ~ 70 microns.
2. preparation method according to claim 1, is characterized in that: the volumetric concentration of described tetramethyl ammonium hydroxide solution is 15% ~ 30%, and etch period is 3 ~ 8 min.
3. preparation method according to claim 1, is characterized in that: the temperature of carving for described time is 70 ~ 100 degree.
4. preparation method according to claim 1, is characterized in that: the laser of described laser insulation employing 532 nm, after laser, the width of insulation tank is 60 ~ 80 microns, and the degree of depth is 20 ~ 60 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410744428.7A CN104409574A (en) | 2014-12-09 | 2014-12-09 | Preparation method for solar cell with through hole structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410744428.7A CN104409574A (en) | 2014-12-09 | 2014-12-09 | Preparation method for solar cell with through hole structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104409574A true CN104409574A (en) | 2015-03-11 |
Family
ID=52647187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410744428.7A Pending CN104409574A (en) | 2014-12-09 | 2014-12-09 | Preparation method for solar cell with through hole structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104409574A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533870A (en) * | 2009-04-01 | 2009-09-16 | 常州天合光能有限公司 | Technology for preparing grooved printing electrode of crystalline silicon solar cell |
| CN102800742A (en) * | 2011-05-27 | 2012-11-28 | 苏州阿特斯阳光电力科技有限公司 | Method for manufacturing back contact crystalline silicon solar battery piece |
| CN102800740A (en) * | 2011-05-27 | 2012-11-28 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method of back contact crystalline silicon solar cell |
| CN102800741A (en) * | 2011-05-27 | 2012-11-28 | 苏州阿特斯阳光电力科技有限公司 | Method for manufacturing back contact crystalline silicon solar battery piece |
| CN103618021A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | MWT battery manufacturing method |
| WO2014174407A1 (en) * | 2013-04-24 | 2014-10-30 | Ebfoil S.R.L. | Back-contact back-sheet for photovoltaic modules with pass-through electric contacts |
-
2014
- 2014-12-09 CN CN201410744428.7A patent/CN104409574A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101533870A (en) * | 2009-04-01 | 2009-09-16 | 常州天合光能有限公司 | Technology for preparing grooved printing electrode of crystalline silicon solar cell |
| CN102800742A (en) * | 2011-05-27 | 2012-11-28 | 苏州阿特斯阳光电力科技有限公司 | Method for manufacturing back contact crystalline silicon solar battery piece |
| CN102800740A (en) * | 2011-05-27 | 2012-11-28 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method of back contact crystalline silicon solar cell |
| CN102800741A (en) * | 2011-05-27 | 2012-11-28 | 苏州阿特斯阳光电力科技有限公司 | Method for manufacturing back contact crystalline silicon solar battery piece |
| WO2014174407A1 (en) * | 2013-04-24 | 2014-10-30 | Ebfoil S.R.L. | Back-contact back-sheet for photovoltaic modules with pass-through electric contacts |
| CN103618021A (en) * | 2013-10-18 | 2014-03-05 | 浙江晶科能源有限公司 | MWT battery manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106449800B (en) | Passivation contact structures of selective polysilicon membrane and preparation method thereof | |
| EP3321979B1 (en) | Preparation method for local back contact solar cell | |
| CN102646728B (en) | Back electrode structure of a kind of back contact silicon solar battery sheet and preparation method thereof | |
| CN103904164B (en) | Preparation method for N-shaped back-junction solar cell | |
| CN103646981B (en) | Embossing welding and the preparation method of assembly for back contact solar cell assembly | |
| TWI718703B (en) | Solar cell and manufacturing method thereof | |
| CN104218123A (en) | N-type IBC silicon solar cell manufacturing method based on ion implantation process | |
| CN103199153B (en) | A kind of preparation method of crystal-silicon solar cell | |
| CN102683496B (en) | Preparation method of N-type double-sided back contact solar cell | |
| CN109585600A (en) | A kind of production method of the efficient crystal silicon solar batteries of two-sided PERC | |
| CN203812893U (en) | N-type back-junction solar cell | |
| CN105304730A (en) | MWT cell with back passive film and preparation method thereof | |
| CN105185849A (en) | Back-contact solar cell and preparation method | |
| CN102779862B (en) | Back electrode structure of a kind of back contact silicon solar battery sheet and preparation method thereof | |
| CN104134706B (en) | Graphene silicon solar cell and manufacturing method thereof | |
| CN203674218U (en) | Crystalline silicon solar cell integrating MWP and passive emitter and rear cell technologies | |
| CN109659399A (en) | A kind of preparation method of the small exposure mask solar battery of MWT | |
| CN202749376U (en) | Back-passivation solar cell | |
| CN204927300U (en) | PERC solar cell | |
| CN102820375B (en) | Preparation method for back contact solar battery | |
| CN104009119A (en) | Method for manufacturing P type crystalline silicon grooved buried-contact battery | |
| CN109560143A (en) | Print Al2O3Prepare the preparation method of efficient PERC battery | |
| CN104409574A (en) | Preparation method for solar cell with through hole structure | |
| CN202948936U (en) | Aluminum back field-free back passivation type solar crystal silicon cell | |
| CN104681665A (en) | Preparation method of novel back-passivation solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150311 |