CN109560143A - Print Al2O3Prepare the preparation method of efficient PERC battery - Google Patents
Print Al2O3Prepare the preparation method of efficient PERC battery Download PDFInfo
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- CN109560143A CN109560143A CN201811136735.1A CN201811136735A CN109560143A CN 109560143 A CN109560143 A CN 109560143A CN 201811136735 A CN201811136735 A CN 201811136735A CN 109560143 A CN109560143 A CN 109560143A
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- Prior art keywords
- silicon wafer
- layer
- back side
- emitter junction
- film
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 19
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 19
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 17
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000002161 passivation Methods 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 238000007639 printing Methods 0.000 claims abstract description 9
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 238000004804 winding Methods 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims abstract description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000004411 aluminium Substances 0.000 claims abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 4
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 4
- 238000005498 polishing Methods 0.000 claims abstract description 4
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 239000004332 silver Substances 0.000 claims abstract description 4
- 239000000155 melt Substances 0.000 claims abstract 2
- 229910004205 SiNX Inorganic materials 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 6
- 239000003513 alkali Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000005416 organic matter Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 238000006392 deoxygenation reaction Methods 0.000 claims 1
- 238000003475 lamination Methods 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to printing Al2O3The method for preparing efficient PERC battery, comprising steps of silicon wafer removes damaging layer, surface polishing, one texture-etching side form pyramid flannelette；The silicon wafer of pyramid flannelette will be had, in high temperature, phosphorous environment, forms N+ emitter junction；It will be with N+ emitter junction silicon wafer as HNO3In/HF solution, the region heavy doping N+ at the back side and edge winding degree of the removal with N+ emitter junction silicon wafer reduces its electric leakage；By the way of silk-screen printing, Al is printed2O3Presoma forms the Al of high passivation quality by drying, high annealing2O3Layer；By the Al of high passivation quality2O3The front and the back side of the silicon wafer of layer, using PECVD or magnetron sputtering method, the hydrogenated amorphous silicon nitride passivated reflection reducing for depositing 80nm-100nm penetrates layer；The selective figure of layer progress is penetrated to the hydrogenated amorphous silicon nitride passivated reflection reducing and melts film；By way of silk-screen printing, aluminium paste is printed at the back side for opening the silicon wafer after film of acquisition and silver electrode, front type metal gate electrode line form positive rear electrode metallized contact.
Description
Technical field
The present invention relates to a kind of preparation methods of solar battery, more particularly, to a kind of printing Al2O3Prepare efficient PERC
The preparation method of battery.
Background technique
With the development in photovoltaic market, demand of the people to efficient crystal silicon cell is more and more urgent.At present
Monocrystalline PERC battery in terms of cost or battery efficiency, has highly competititve at present.But up-front investment higher cost,
Especially Al2O3Crucial filming equipment, this patent exactly under the premise of not reducing cell backside passivation effect, are reduced and are set early period
Standby cost of investment.Print Al2O3The preparation method for preparing efficient PERC battery is a kind of low cost, can be greatly reduced and set early period
Standby investment, the technology of efficient PERC battery is prepared, there are boundless market prospects.
Current routine PERC cell backside face is passivated the Al deposited using PECVD or ALD mode2O3Film, but equipment
Cost of investment is higher.
Summary of the invention
The object of the invention is to further decrease PERC battery up-front investment cost, and compatible existing PERC volume production road
Diameter based on printing Al2O3The preparation method for preparing efficient PERC battery is the focus development direction of efficient monocrystalline PERC battery.
The purpose of the present invention can be achieved through the following technical solutions:
Print Al2O3The method for preparing efficient PERC battery, which is characterized in that comprising steps of
Step 1: silicon wafer removes damaging layer in an alkali texturing slot, and carries out surface polishing, one texture-etching side, forms 1 μm of -6 μ
The pyramid flannelette of m high；
Step 2: the silicon wafer with pyramid flannelette that will be obtained in step 1, in 750-860 degrees Celsius of high temperature, phosphorous
Environment in, pass through High temperature diffusion, formed N+ emitter junction；
Step 3: will be obtained in step 2 with N+ emitter junction silicon wafer as equipped with HNO3The producing line wet process of/HF solution is carved
It loses in equipment, the region heavy doping N+ at the back side and edge winding degree of the etching removal with N+ emitter junction silicon wafer reduces its electric leakage；
Step 4: by the way of silk-screen printing, the etching removal that step 3 obtains being had to the back side of N+ emitter junction silicon wafer
With the back up Al of the silicon wafer in the region heavy doping N+ of edge winding degree2O3Presoma is formed high blunt by drying, high annealing
Change the Al of quality2O3Layer；
Step 5: in the Al for the high passivation quality that step 4 obtains2O3The front and the back side of the silicon wafer of layer, using PECVD or
Magnetron sputtering method, the hydrogenated amorphous silicon nitride passivated reflection reducing for depositing 80nm-100nm penetrate layer；
Step 6: it is graphical that layer progress selectivity being penetrated to the hydrogenated amorphous silicon nitride passivated reflection reducing using ns or Ps laser
Film is opened, is prepared to form localized contact；
Step 7: by way of silk-screen printing, at the back side for opening the silicon wafer after film that step 6 obtains printing aluminium paste and
Silver electrode, front type metal gate electrode line form positive rear electrode metallized contact.
Preferably, the prepared Al of step 42O3Layer is with a thickness of 30nm-100nm.
It preferably, further include step 4a after step 4, the step 4a are as follows:
By the Al of acquisition2O3The silicon wafer of layer is gone by 300-800 degrees Celsius of temperature by 5-20 minutes stoving process
The organic matter of removing oxide layer.
It preferably, further include step 4b, the step 4b after step 4a are as follows:
In 500-800 degree Celsius range and the boiler tube environment of oxygen rich air, 5-30 minutes high annealings are carried out, are used for
Make with Al2O3The silicon wafer of layer is finer and close.
Preferably, the Al of the high passivation quality obtained described in step 5 in step 42O3The front and the back side of the silicon wafer of layer
SiNx deposition is carried out, Al is formed2O3+ SiNx layer, front SiNx layer thickness is in 75-85nm, ranges of indices of refraction 1.95-2.2；The back side
SiNx layer thickness is in 70-150nm, ranges of indices of refraction 1.95-2.2.
Preferably, to Al described in step 62O3+ SiNx layer carries out laser and opens film, described for being subsequently formed metallized contact
Laser opens the opening diameter of film between 10um-100um, is used to form excellent Ohmic contact.
The present invention passes through printing Al2O3Presoma activates Al by subsequent drying, annealing process2O3Film, for substituting
ALD and PECVD the preparation Al used in industrialization at present2O3Film is a kind of efficient PERC battery technology of great cost advantage
Route has low equipment investment cost advantage, advantageously reduces photovoltaic products degree electricity cost.
Detailed description of the invention
Fig. 1 is present invention printing Al2O3Prepare the flow chart of the preparation method of efficient PERC battery.
Specific embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.Following embodiment will be helpful to this field
Technical staff further understand the present invention, but the invention is not limited in any way.It should be pointed out that the general of this field
For logical technical staff, without departing from the inventive concept of the premise, various modifications and improvements can be made.These are belonged to
Protection scope of the present invention.
Embodiment 1
Print Al2O3The method for preparing efficient PERC battery, which is characterized in that comprising steps of
Step 1: silicon wafer removes damaging layer in an alkali texturing slot, and carries out surface polishing, one texture-etching side, forms 1 μm of -6 μ
The pyramid flannelette of m high.
Step 2: the silicon wafer with pyramid flannelette that will be obtained in step 1, in 750-860 degrees Celsius of high temperature, phosphorous
Environment in, pass through High temperature diffusion, formed N+ emitter junction.
Step 3: will be obtained in step 2 with N+ emitter junction silicon wafer as equipped with HNO3The producing line wet process of/HF solution is carved
It loses in equipment, the region heavy doping N+ at the back side and edge winding degree of the etching removal with N+ emitter junction silicon wafer reduces its electric leakage.
Step 4: by the way of silk-screen printing, the etching removal that step 3 obtains being had to the back side of N+ emitter junction silicon wafer
With the back up Al of the silicon wafer in the region heavy doping N+ of edge winding degree2O3Presoma is formed high blunt by drying, high annealing
Change the Al of quality2O3Layer.
According to one embodiment of present invention, the prepared Al of step 42O3Layer is with a thickness of 30nm-100nm.
It according to one embodiment of present invention, further include step 4a after step 4, the step 4a are as follows:
By the Al of acquisition2O3The silicon wafer of layer is gone by 300-800 degrees Celsius of temperature by 5-20 minutes stoving process
The organic matter of removing oxide layer.
It according to one embodiment of present invention, further include step 4b, the step 4b after step 4a are as follows:
In 500-800 degree Celsius range and the boiler tube environment of oxygen rich air, 5-30 minutes high annealings are carried out, are used for
Make with Al2O3The silicon wafer of layer is finer and close.
Step 5: in the Al for the high passivation quality that step 4 obtains2O3The front and the back side of the silicon wafer of layer, using PECVD or
Magnetron sputtering method, the hydrogenated amorphous silicon nitride passivated reflection reducing for depositing 80nm-100nm penetrate layer.
According to one embodiment of present invention, the Al of the high passivation quality obtained described in step 5 in step 42O3Layer
Silicon wafer front and the back side carry out SiNx deposition, formed Al2O3+ SiNx layer, positive SiNx thickness degree is in 75-85nm, refraction
Rate range 1.95-2.2；Back side SiNx layer thickness is in 70-150nm, ranges of indices of refraction 1.95-2.2.
Step 6: it is graphical that layer progress selectivity being penetrated to the hydrogenated amorphous silicon nitride passivated reflection reducing using ns or Ps laser
Film is opened, is prepared to form localized contact.
Preferably, to Al described in step 62O3+ SiNx layer carries out laser and opens film, described for being subsequently formed metallized contact
Laser opens the opening diameter of film between 10um-100um, is used to form excellent Ohmic contact.
Step 7: by way of silk-screen printing, at the back side for opening the silicon wafer after film that step 6 obtains printing aluminium paste and
Silver electrode, front type metal gate electrode line form positive rear electrode metallized contact.
The embodiment of the present invention, using silk-screen printing Al2O3The mode of presoma, in conjunction with subsequent drying and annealing process,
The Al with identical passivation quality may be implemented2O3Film is a kind of PERC battery technology route of great cost advantage.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, this not shadow
Ring substantive content of the invention.
Claims (6)
1. printing Al2O3The method for preparing efficient PERC battery, which is characterized in that comprising steps of
Step 1: silicon wafer removes damaging layer in an alkali texturing slot, and carries out surface polishing, one texture-etching side, forms 1 μm of -6 μm of height
Pyramid flannelette；
Step 2: the silicon wafer with pyramid flannelette that will be obtained in step 1, in 750-860 degrees Celsius of high temperature, phosphorous stone
In English pipe ring border, by High temperature diffusion, N+ emitter junction is formed；
Step 3: will be obtained in step 2 with N+ emitter junction silicon wafer as equipped with HNO3The producing line wet-method etching equipment of/HF solution
In, the region heavy doping N+ at the back side and edge winding degree of the etching removal with N+ emitter junction silicon wafer reduces its electric leakage；
Step 4: by the way of silk-screen printing, the etching removal that step 3 obtains being had to the back side and side of N+ emitter junction silicon wafer
The back up Al of the silicon wafer in the region heavy doping N+ of edge winding degree2O3Presoma forms high passivation matter by drying, high annealing
The Al of amount2O3Layer；
Step 5: in the Al for the high passivation quality that step 4 obtains2O3The front and the back side of the silicon wafer of layer, are splashed using PECVD or magnetic control
Method is penetrated, the hydrogenated amorphous silicon nitride passivated reflection reducing for depositing 80nm-100nm penetrates layer；
Step 6: the selective figure of layer progress is penetrated to the hydrogenated amorphous silicon nitride passivated reflection reducing using ns or Ps laser and melts film,
It prepares to form localized contact；
Step 7: by way of silk-screen printing, aluminium paste and silver electricity are printed at the back side for opening the silicon wafer after film that step 6 obtains
Pole, front type metal gate electrode line form positive rear electrode metallized contact.
2. method according to claim 1, which is characterized in that the prepared AL of step 42O3Layer is with a thickness of 30nm-
100nm。
3. printing Al according to claim 12O3Prepare the preparation method of efficient PERC battery, which is characterized in that step 4
After further include step 4a, the step 4a are as follows:
By the Al of acquisition2O3The silicon wafer of layer goes deoxygenation by 5-20 minutes stoving process by 300-800 degrees Celsius of temperature
Change the organic matter of layer.
4. according to the method described in claim 3, it is characterized in that, further include step 4b after step 4a, the step 4b are as follows:
In 500-800 degree Celsius range and the boiler tube environment of oxygen rich air, 5-30 minutes high annealings are carried out, for making band
There is Al2O3The silicon wafer of layer is finer and close.
5. the method according to claim 1, wherein the high passivation quality obtained described in step 5 in step 4
Al2O3The front and the back side of the silicon wafer of layer carry out SiNx deposition, form Al2O3+ SiNx lamination, front SiNx layer thickness is in 75-
85nm, ranges of indices of refraction 1.95-2.2；Back side SiNx layer thickness is in 70-150nm, ranges of indices of refraction 1.95-2.2.
6. according to the method described in claim 5, it is characterized in that, to Al described in step 62O3+ SiNx layer carries out laser and opens film,
For being subsequently formed metallized contact, the laser is opened the opening diameter of film between 10um-100um, is used to form excellent
Ohmic contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811136735.1A CN109560143A (en) | 2018-09-28 | 2018-09-28 | Print Al2O3Prepare the preparation method of efficient PERC battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811136735.1A CN109560143A (en) | 2018-09-28 | 2018-09-28 | Print Al2O3Prepare the preparation method of efficient PERC battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109560143A true CN109560143A (en) | 2019-04-02 |
Family
ID=65864714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811136735.1A Pending CN109560143A (en) | 2018-09-28 | 2018-09-28 | Print Al2O3Prepare the preparation method of efficient PERC battery |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110257072A (en) * | 2019-06-13 | 2019-09-20 | 常州时创能源科技有限公司 | Silicon wafer one texture-etching side and etching edge additive and its application |
| CN110783183A (en) * | 2019-10-15 | 2020-02-11 | 中国电子科技集团公司第十一研究所 | Processing method of silicon-based substrate |
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| CN104201252A (en) * | 2014-09-22 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | PERC (passivated emitter and locally diffused rear contact) solar cell preparation method |
| CN105489670A (en) * | 2015-11-30 | 2016-04-13 | 何晨旭 | Aluminium oxide slurry for surface passivation for crystalline silicon solar cell and preparation method for passivating film |
| CN105702803A (en) * | 2015-12-21 | 2016-06-22 | 合肥晶澳太阳能科技有限公司 | Process for manufacturing efficient polycrystalline cell |
| CN107068790A (en) * | 2017-03-03 | 2017-08-18 | 广东爱康太阳能科技有限公司 | Preparation method, battery, component and the system of p-type PERC solar cells |
| CN107845692A (en) * | 2016-09-20 | 2018-03-27 | 上海神舟新能源发展有限公司 | A kind of preparation method of modified back side tunnel oxidation passivation contact high-efficiency battery |
-
2018
- 2018-09-28 CN CN201811136735.1A patent/CN109560143A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201252A (en) * | 2014-09-22 | 2014-12-10 | 苏州阿特斯阳光电力科技有限公司 | PERC (passivated emitter and locally diffused rear contact) solar cell preparation method |
| CN105489670A (en) * | 2015-11-30 | 2016-04-13 | 何晨旭 | Aluminium oxide slurry for surface passivation for crystalline silicon solar cell and preparation method for passivating film |
| CN105702803A (en) * | 2015-12-21 | 2016-06-22 | 合肥晶澳太阳能科技有限公司 | Process for manufacturing efficient polycrystalline cell |
| CN107845692A (en) * | 2016-09-20 | 2018-03-27 | 上海神舟新能源发展有限公司 | A kind of preparation method of modified back side tunnel oxidation passivation contact high-efficiency battery |
| CN107068790A (en) * | 2017-03-03 | 2017-08-18 | 广东爱康太阳能科技有限公司 | Preparation method, battery, component and the system of p-type PERC solar cells |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110257072A (en) * | 2019-06-13 | 2019-09-20 | 常州时创能源科技有限公司 | Silicon wafer one texture-etching side and etching edge additive and its application |
| CN110783183A (en) * | 2019-10-15 | 2020-02-11 | 中国电子科技集团公司第十一研究所 | Processing method of silicon-based substrate |
| CN110783183B (en) * | 2019-10-15 | 2022-04-15 | 中国电子科技集团公司第十一研究所 | Processing method of silicon-based substrate |
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Application publication date: 20190402 |
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