CN104409552A - Fluorescence permeability-increasing photovoltaic glass - Google Patents
Fluorescence permeability-increasing photovoltaic glass Download PDFInfo
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- CN104409552A CN104409552A CN201410691204.4A CN201410691204A CN104409552A CN 104409552 A CN104409552 A CN 104409552A CN 201410691204 A CN201410691204 A CN 201410691204A CN 104409552 A CN104409552 A CN 104409552A
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- glass
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- reflection
- photovoltaic glass
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- 239000011521 glass Substances 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 5
- 239000002131 composite material Substances 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 241001062009 Indigofera Species 0.000 claims description 2
- 229910001507 metal halide Inorganic materials 0.000 claims 1
- 150000005309 metal halides Chemical class 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001512 metal fluoride Inorganic materials 0.000 abstract description 2
- 230000035699 permeability Effects 0.000 abstract description 2
- -1 rare earth ions Chemical class 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000005416 organic matter Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 238000003980 solgel method Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000193 polymethacrylate Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 230000006750 UV protection Effects 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- KWOAOWHNMXFAKO-UHFFFAOYSA-N [Eu].[F] Chemical compound [Eu].[F] KWOAOWHNMXFAKO-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Glass Compositions (AREA)
Abstract
The invention discloses fluorescence permeability-increasing photovoltaic glass. A composite plating layer which is produced by a sol-gel process and a magnetron sputtering process is disposed on one side of the glass. The plating structure sequentially comprises a medium layer 1, a medium layer 2 and a medium layer 3 from a glass base layer to the outside. The medium layer 1 is made of metal fluoride or metal oxide with certain thickness. The medium layer 2 is made of low-refraction-rate organic matter which has certain thickness and contains rare earth ions. The medium layer 3 is made of silicon oxide with certain thickness. The fluorescence permeability-increasing photovoltaic glass has the advantages that the glass has low reflecting rate and high light permeability to visible light and near infrared light, ultraviolet light can be absorbed efficiently, converted into visible fluorescent light and transmitted again by the glass, and the photoelectric conversion efficiency of photovoltaic components can be increased while the weather resistance of the photovoltaic components can be increased.
Description
Technical field
The present invention relates to the anti-reflection photovoltaic glass of a kind of fluorescence, the weatherability of photovoltaic module can be improved, and the photoelectric conversion efficiency of photovoltaic module can be improved, one of key technology belonging to photovoltaic art.
Background technology
Along with economic development, energy resource consumption and fossil energy exhaustion become increasingly serious problem.In recent years, countries in the world are explored actively one after another with photovoltaic technology is the novel environment friendly regenerative resource of representative.China, from 2006, greatly develops photovoltaic industry, has set up the complete photovoltaic industry chain from silicon ingot manufacture to inversion grid connection, and has achieved industry closed loop.Current domestic main photovoltaic industry technology is monocrystalline silicon and polysilicon members technology, the Material selec-tion scheme that this Ye Shi is international comparatively popular.
Monocrystalline silicon and polysilicon photovoltaic module need photovoltaic glass as encapsulation cover plate material.The performance of photovoltaic glass directly affects the height of component integration photoelectric conversion efficiency.Because glass surface has reflex to incident ray, thus common technical scheme on glass, plates an anti-reflection layer, to increase the transmitance of light in the industry.Such glass is called as photovoltaic AR glass or anti-reflection glass.
On the other hand; photovoltaic module is commonly used EVA film lamination and is carried out packaging protection to cell piece; and EVA film is poor to the ultraviolet tolerance in daylight; common AR glass effectively can not completely cut off ultraviolet, and thus photovoltaic module also exists the easy aging yellowing of EVA film and then reduces the problem of component efficiency.
Photovoltaic module monocrystalline silicon used or polycrystal silicon cell, the optical wavelength range of its response does not contain ultraviolet, purple, the blue wave band of daylight, and this wave band luminous energy is radiated at battery surface, can not convert electric energy to, waste.
For above problem, this Technology design, by complex function rete, realizes photovoltaic glass anti-reflection and isolated ultraviolet double action, from increasing assembly surface light income and delaying the photoelectric conversion efficiency that component aging two aspects improve photovoltaic module jointly.
Summary of the invention
The object of the present invention is to provide the anti-reflection photovoltaic glass of a kind of fluorescence.This kind of anti-reflection photovoltaic glass of fluorescence be not to make the photovoltaic ultra-clear glasses of anti-reflection coating for basic unit, and by magnetron sputtering technique or pecvd process, and sol-gal process technique obtains.
The present invention is the ultra-clear glasses in its minute surface side with triple-layer coating: its structure is outwards followed successively by dielectric layer 1, dielectric layer 2, dielectric layer 3 by glass-base.Dielectric layer 1 for thickness be oxide or the metal fluoride of 10 ~ 400nm.Dielectric layer 2 for thickness be 100 ~ 10nm containing the low-refraction organic substance of rare earth ion, its refractive index is less than 1.455, close to the refractive index of glass.Dielectric layer 3 for thickness be the Si oxide of 20 ~ 500nm.
Described dielectric layer 1 with customization metal or metal alloy material for target, to fill oxygen or halogen gas generates corresponding oxide or halide, adopt the method for vacuum magnetic-control sputtering, wherein the argon gas of sputter gas to be volume flow be 10 ~ 70 mark condition milliliter per minutes and volume flow are the oxygen composition of 30 ~ 95 mark condition milliliter per minutes, and sputtering power is 10 ~ 50 kilowatts.
Described dielectric layer 2, with the low refractive index polymer of the low refractive index polymer material of rare earth doped complex or side chain keyed jointing rare earth compounding, forms homogeneous coating by sol-gal process technique at dielectric layer 1 outer surface.
Rare earth compounding chemical constitution contained by described dielectric layer 2 is greater than 80% to daylight UV and indigo plant, purple light wave band absorptivity, and will absorb energy with the fluorescent quantum conversion efficiency being greater than 90% and launch in 450 ~ 900nm wave-length coverage.
Described dielectric layer 3 is with silicon target or silicon alloy target, fill oxygen and generate corresponding oxide, adopt the method for vacuum magnetic-control sputtering, wherein the argon gas of sputter gas to be volume flow be 10 ~ 70 mark condition milliliter per minutes and volume flow are the oxygen composition of 30 ~ 95 mark condition milliliter per minutes, and sputtering power is 10 ~ 50 kilowatts.
The film system that described dielectric layer 1, dielectric layer 2, dielectric layer 3 are formed jointly, is less than 3% to visible reflectance and is greater than 96% at 450 ~ 1100nm wave-length coverage light transmittance.
Compared with prior art, the present invention has the following advantages:
Adopt assembly of thin films structure, while reducing visible reflectance, guaranteeing visible ray high permeability, efficient absorption intercepts ultraviolet, and this wave band luminous energy is transformed into the applicable visible waveband transmitting of photovoltaic module, further increases the photoelectric conversion efficiency of assembly.The present invention has captured easily aging with EVA glue-line and the problem that reduces of current photovoltaic module actual light photoelectric transformation efficiency, and higher than the conversion efficiency of common new photovoltaic module.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Accompanying drawing is glass structure layer of the present invention.Wherein, I is basic unit, and II is dielectric layer 1, III be dielectric layer 2, IV is dielectric layer 3.
embodiment: adopt 3 millimeters thick float glass process ultra-clear glasses to be basic unit, through cleaning, drying and processing, stand-by; Utilize magnetron sputtering technique, vacuumize after reaching requirement, use indium tin target, and evenly pass into high purity argon, argon-oxygen gas mixture successively, by Modulating Power and gas concentration, obtained dielectric layer 1(material is tin indium oxide, thickness 10 ~ 400nm); By sol-gal process technique, use doped with Eu (TTA)
3the fluorine of Phen replaces polymethacrylates aqueous isopropanol, continues to plate dielectric layer 2(material and replace polymethacrylates, thickness 100 ~ 10nm for mixing europium fluorine outside dielectric layer 1); By low temperature magnetic sputtering technique, vacuumize after reaching requirement, use silicon target, and evenly pass into high purity argon, argon-oxygen gas mixture successively, by Modulating Power and gas concentration, obtained dielectric layer 3(material is silica, and thickness is 20 ~ 500nm).Complete the glass of plated film, be less than 3% to visible reflectance, be greater than 96% at 450 ~ 1100nm wave-length coverage light transmittance, reach 90% to absorption of UV, fluorescent quantum conversion efficiency reaches 65%.
Claims (8)
1. the anti-reflection photovoltaic glass of fluorescence, is characterized in that: this kind of glass has composite deposite in its side, and its coating structure is outwards followed successively by dielectric layer 1, dielectric layer 2, dielectric layer 3 from basic unit's glass.
2. the anti-reflection photovoltaic glass of fluorescence according to claim 1, is characterized in that: described basic unit's glass adopts photovoltaic ultra-clear glasses, but its surface not yet makes anti-reflection layer.
3. the anti-reflection photovoltaic glass of fluorescence according to claim 1, is characterized in that: described dielectric layer 1 adopts thickness to be oxide or the metal halide of 10 ~ 400nm, and is obtained by magnetron sputtering or pecvd process.
4. the anti-reflection photovoltaic glass of fluorescence according to claim 1, is characterized in that: described dielectric layer 2 adopt thickness be 100nm ~ 10m containing the low-refraction organic substance of rare earth ion, this layer material is obtained by sol-gal process technique.
5. the anti-reflection photovoltaic glass of fluorescence according to claim 1, is characterized in that: described dielectric layer 3 adopts thickness to be the Si oxide of 20 ~ 500nm, and this layer material is obtained by magnetron sputtering technique.
6. the fluorescence according to claim 1 or 4 is anti-reflection photovoltaic glass, it is characterized in that: described dielectric layer 2 pairs of daylight UV and indigo plant, purple light wave band absorptivity are greater than 80%, and energy will be absorbed with the fluorescent quantum conversion efficiency being greater than 90% and launch in 450 ~ 900nm wave-length coverage.
7. the anti-reflection photovoltaic glass of fluorescence according to claim 6, is characterized in that: described dielectric layer 2 refractive index, lower than 1.455, forms anti-reflection layer jointly with dielectric layer 1 and dielectric layer 3, strengthens 450 ~ 1100nm wave band light transmittance.
8. the fluorescence according to claim 1 or 3 is anti-reflection photovoltaic glass, it is characterized in that: described dielectric layer 1 pair of visible reflectance is less than 3% and is greater than 96% at 450 ~ 1100nm wave-length coverage light transmittance, can effectively improve assembly photoelectric conversion efficiency for photovoltaic component encapsulating panel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410691204.4A CN104409552A (en) | 2014-11-25 | 2014-11-25 | Fluorescence permeability-increasing photovoltaic glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410691204.4A CN104409552A (en) | 2014-11-25 | 2014-11-25 | Fluorescence permeability-increasing photovoltaic glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104409552A true CN104409552A (en) | 2015-03-11 |
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ID=52647165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410691204.4A Pending CN104409552A (en) | 2014-11-25 | 2014-11-25 | Fluorescence permeability-increasing photovoltaic glass |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104409552A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101882634A (en) * | 2010-07-14 | 2010-11-10 | 西安交通大学 | Solar cell capable of working at night |
| CN103183479A (en) * | 2013-04-16 | 2013-07-03 | 浙江大学 | Preparation method of anti-reflection thin film with photo-transformation function |
| CN103260870A (en) * | 2010-12-24 | 2013-08-21 | 旭硝子株式会社 | Article having low reflection film |
-
2014
- 2014-11-25 CN CN201410691204.4A patent/CN104409552A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101882634A (en) * | 2010-07-14 | 2010-11-10 | 西安交通大学 | Solar cell capable of working at night |
| CN103260870A (en) * | 2010-12-24 | 2013-08-21 | 旭硝子株式会社 | Article having low reflection film |
| CN103183479A (en) * | 2013-04-16 | 2013-07-03 | 浙江大学 | Preparation method of anti-reflection thin film with photo-transformation function |
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Application publication date: 20150311 |