CN109994564B - Photovoltaic cell assembly - Google Patents
Photovoltaic cell assembly Download PDFInfo
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- CN109994564B CN109994564B CN201910414897.5A CN201910414897A CN109994564B CN 109994564 B CN109994564 B CN 109994564B CN 201910414897 A CN201910414897 A CN 201910414897A CN 109994564 B CN109994564 B CN 109994564B
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- 239000002313 adhesive film Substances 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims description 30
- 239000011521 glass Substances 0.000 claims description 28
- 229920000642 polymer Polymers 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 22
- 230000000694 effects Effects 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 14
- 238000012360 testing method Methods 0.000 description 14
- 238000002834 transmittance Methods 0.000 description 13
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 10
- 238000010248 power generation Methods 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 239000002585 base Substances 0.000 description 7
- 238000004132 cross linking Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000003513 alkali Substances 0.000 description 5
- 239000004408 titanium dioxide Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910001415 sodium ion Inorganic materials 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910001425 magnesium ion Inorganic materials 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- UPGSWASWQBLSKZ-UHFFFAOYSA-N 2-hexoxyethanol Chemical compound CCCCCCOCCO UPGSWASWQBLSKZ-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 238000007171 acid catalysis Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000006121 base glass Substances 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 208000002780 macular degeneration Diseases 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 150000002895 organic esters Chemical class 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- -1 tetrabutyl titanate Chemical class 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a photovoltaic cell assembly, which comprises at least one cell, wherein cross-linked adhesive film layers are respectively arranged above and below the cell, the cross-linked adhesive film layers are provided with at least one hollowed-out part, the cell is arranged opposite to the hollowed-out part, and the area of the hollowed-out part is not smaller than the area of the cell along the horizontal direction, so that the cross-linked adhesive film covers the upper part and the lower part of the cell. The invention can effectively improve the sunlight utilization rate, improve the conversion efficiency of the photovoltaic module and simultaneously avoid the occurrence of PID effect; meanwhile, the technical scheme of the invention has simple process and lower cost.
Description
Technical Field
The invention relates to the field of photovoltaic module packaging and photovoltaic module power generation efficiency, in particular to a photovoltaic cell module resistant to PID effect.
Background
The solar single battery is not generally used as a power supply directly, and glass, a crosslinked adhesive film (EVA, PVB, PVF, etc.), a battery piece, etc. are generally packaged into a photovoltaic module, and the photovoltaic module is a key part in a photovoltaic power generation system. In the photovoltaic power generation system, because the photovoltaic module works outdoors throughout the year, moisture and high temperature environment easily generates water vapor, if the water vapor goes deep into the module, the conductivity of the packaging material rises, and the leakage current of the corresponding module increases, so that the polarization phenomenon, namely PID effect, of the surface of the module can be caused. The PID effect is also called potential induced attenuation, which is a phenomenon that the performance of a component is attenuated due to ion migration under the action of high voltage between the packaging material of the battery component, the materials of the upper surface and the lower surface of the battery component and the grounded metal frame of the battery piece, and therefore, the output power of the component is greatly damaged due to the PID effect of the component. The true cause of PID effect generation has no clear theories so far, but the data of the individual photovoltaic cell assembly factories and research institutions indicate that PID is related to cell, glass, glue film, temperature, humidity and voltage.
The existing anti-PID technology is as follows: the selection of special high PID-resistant crosslinked adhesive films, the addition of a PID-resistant film between glass battery plates, or the addition of additional electrical devices to eliminate induced potentials, etc., whether these techniques are truly effective or not is yet to be further verified, and if these techniques are adopted in industry, the production cost will be increased drastically undoubtedly, so that it can be said that there is currently no effective low-cost PID-resistant technique. It is now clear that glass and film have a clear relationship to the occurrence of PID phenomena. Glass for photovoltaic modules is glass containing sodium ions, and silicate under high temperature and high humidity conditions is reported in literatureAlkali is separated out from the surface of the glass, and the main component is Na 2 O, mgO. However, the cost is very high and the feasibility is not great for reducing the content of sodium and magnesium ions in the glass; and when the glass was replaced with quartz glass, no PID phenomenon was found under the same test conditions. Since the battery piece is very fragile and is easy to oxidize after being exposed to air for a long time, the battery piece must be encapsulated by a crosslinked adhesive film and photovoltaic glass, and then the crosslinked adhesive film is positioned between the battery piece and the glass, so that sodium ions and magnesium ions are intangibly used as a medium for migrating from the glass to the battery piece. In addition, the transparency of the crosslinked adhesive film also affects the power generation capability of the assembly, and long-time outdoor operation can degrade the performance of the crosslinked adhesive film, lower the transparency, generate risks such as macular degeneration and the like, and seriously affect the light absorption capability of the surface of the battery. However, even the crosslinked film (transmittance of more than 90%) with the best transparency on the market can absorb 10% of solar power, and this part of solar light cannot be effectively utilized by the battery sheet. In addition, the light transmittance of the photovoltaic glass is only about 90%, and the power generation capacity of the photovoltaic module is also affected.
In order to improve the absorption capacity of the photovoltaic cell to light with the wavelength of 300-1100nm in sunlight, an antireflection film (an antireflection film) is deposited on the upper surface of glass in the production process, so that the transmittance of the sunlight is increased. CN105130205B provides a high weather-proof photovoltaic glass antireflection film, which improves the light transmittance of the film layer under the condition of high humidity on the basis of keeping the hardness of the antireflection film higher. The Chinese patent with publication number of CN104628265A provides a multilayer wide-spectrum hydrophobic antireflection film, and the composite film improves the antireflection wavelength range in the visible light range and has certain hydrophobic property. The patent with publication number CN103943691A provides a method for preparing a silicon dioxide/titanium dioxide composite antireflection film by magnetron sputtering, wherein the transmittance of the silicon dioxide/titanium dioxide composite antireflection film in a light wave area of 800-900nm reaches 98%, and the self-cleaning effect is achieved by utilizing the photocatalysis self-cleaning function of titanium dioxide. The methods are all improved on the film layer on the photovoltaic glass, and have certain effects. However, the improvement research on EVA transparency is less, the current research on EVA improves the ultraviolet light resistance and the crosslinking performance under the condition of not affecting the transmittance, and the transmittance of the crosslinked film EVA is still about 90%.
Disclosure of Invention
In order to solve the technical problems, the invention aims to provide a photovoltaic cell assembly, which can effectively improve the sunlight utilization rate, improve the conversion efficiency of the photovoltaic assembly and avoid the occurrence of PID effect; meanwhile, the technical scheme of the invention has simple process and lower cost.
The invention provides a photovoltaic cell assembly capable of being packaged in a traditional hot-pressing mode, which comprises at least one cell, wherein cross-linked adhesive film layers are respectively arranged above and below the cell, the cross-linked adhesive film layers are provided with at least one hollowed-out part, the cell is arranged opposite to the hollowed-out part, and the area of the hollowed-out part is not smaller than the area of the cell along the horizontal direction, so that the upper part and the lower part of the cell are not covered by the cross-linked adhesive film.
The crosslinked adhesive film layer is provided with at least one hollowed-out part, namely, part of the crosslinked adhesive film is removed from the whole crosslinked adhesive film layer, so that the crosslinked adhesive film layer forms a netty film with a hollowed-out structure; the shape of the hollowed-out part can be the same as or different from that of the battery piece, and the area of the hollowed-out part is only required to be ensured to be equal to or slightly larger than that of the battery piece, so that the upper surface and the lower surface of the packaged battery piece are not provided with crosslinking adhesive films.
Further, the crosslinked adhesive film layer is EVA, PVB or PVF.
Further, the photovoltaic cell assembly further comprises an upper base layer and a back plate layer, wherein the upper base layer and the back plate layer are respectively positioned on one side, far away from the cell, of the crosslinked adhesive film layer.
Further, the upper surface and the lower surface of the upper basal layer are provided with an antireflection film A; the refractive index of the antireflection film A is 1.15-1.46; preferably 1.28.
Further, the upper substrate layer is transparent glass; the back sheet layer is a polymer back sheet of glass or TPT, TPE, PET, AAA type.
Further, the upper surface of the battery piece is also provided with an antireflection film B, and the refractive index of the antireflection film B layer is 1.15-1.75; preferably 1.36.
Further, the area of the antireflection film B is not smaller than the area of the battery sheet.
The technical proposalThe requirements of the antireflection film a and the antireflection film B are not particularly limited except for the film thickness and the refractive index. The material can be MgF 2 (refractive index 1.38), caF 2 (refractive index 1.43), siO 2 (refractive index 1.45), KCl (refractive index 1.49), EVA (refractive index 1.50), si 3 N 4 (refractive index 2.0), tiO 2 (refractive index of 2.55) and the like, other films having increased light transmittance may be selected.
In order to save the cost, the anti-reflection film A adopts acid and alkali catalyzed TEOS mixed sol, and the preparation method is as follows:
mixing absolute ethanol, ethyl orthosilicate, water and hydrochloric acid, wherein the molar ratio is n HCl :n H2O :n TEOS :n EtOH After stirring at normal temperature for 4 hours, aging for 5 days for standby, the acid catalysis TEOS sol is obtained.
Mixing absolute ethanol, tetraethoxysilane, water and ammonia water in a molar ratio of n NH4OH ：n H2O :n TEOS :n EtOH After stirring for 4h at normal temperature, the mixture is subjected to water bath at 80 ℃ for 24h to remove excessive ammonia, part of ethanol evaporated in the ammonia removal process is supplemented, and finally the mixture is aged for 5 days for standby, so that the alkali-catalyzed TEOS sol is obtained.
Mixing the acid-catalyzed sol and the base-catalyzed sol at a volume ratio (preferably V Acid(s) ：V Alkali =1:4), and mixing and stirring for 1h at normal temperature to prepare the antireflection film A film liquid. And then preparing an antireflection film A on the upper substrate layer, coating the obtained coating liquid on the upper substrate layer by using a dip-coating method, and controlling the thickness of the antireflection film A by controlling the pulling speed, wherein the faster the pulling speed is, the thicker the film thickness is. For example: the pulling speed is 2mm/s, the time for immersing in the coating liquid is 60s, and the transmittance of the prepared coated photovoltaic glass at the wavelength of 600-900nm after the pulling is finished and the drying is over 98 percent.
The anti-reflection film B in the invention adopts acid, alkali catalyzed TEOS and TiO 2 Mixing the sol. Wherein, the preparation method of the acid and alkali catalyzed TEOS sol is the same as that of the anti-reflection film A; tiO (titanium dioxide) 2 The preparation method of the sol comprises the following steps: ti-containing organic esters, e.g. tetrabutyl titanate, isopropanolTitanium and the like are dissolved in ethylene glycol methyl ether, a proper amount of acetic acid is added as a stabilizer, and the ratio of ethylene glycol hexyl ether to acetic acid is preferably 1:1; tiO (titanium dioxide) 2 The concentration of the sol was 0.2mol/L. Acid and alkali catalyzed TEOS mixed sol and TiO 2 The sol is mixed according to the required proportion, and the antireflection film B with different refractive indexes (1.15-2.55) can be obtained.
Further, the photovoltaic cell assembly further comprises a light reflecting layer facing the lower part of the cell, and the area of the light reflecting layer is not smaller than that of the cell. The reflecting layer is used for reflecting the transmitted light transmitted through the battery piece back to the battery piece again, so that the utilization rate of sunlight is improved. The reflecting layer can be white paper, white paint, film with metallic luster, etc., and has no other special requirements. From the viewpoint of cost and effect, a metallic aluminum foil is preferable.
Further, the battery pieces are multiple, and the multiple battery pieces are arranged into an array structure. The battery cells may be arranged in a 3 x 3 array, a 6 x 6 array, a 12 x 6 array, etc. between the base layer and the back sheet layer.
Further, along the thickness direction of the photovoltaic cell assembly, the thickness of the cell is not greater than the thickness of the hollowed-out portion. The crosslinked adhesive film layer is required to crosslink the upper substrate layer and the back plate layer, so that the battery piece is protected, and therefore, the crosslinked adhesive film cannot be completely removed, and a part of the crosslinked adhesive film is required to be reserved. Because the upper surface and the lower surface of the battery piece are not provided with the crosslinking adhesive films, the incident sunlight can directly reach the battery piece, thereby improving the utilization rate of the sunlight; in addition, since the thickness of the battery piece is not greater than that of the hollowed-out part, a layer of air or other protective gas (depending on the packaging environment) is arranged between the upper substrate layer and the back plate layer, and metal ions such as sodium, magnesium and the like in the upper substrate layer and the back plate layer cannot migrate into the battery piece, so that the PID effect cannot occur.
By means of the scheme, the invention has at least the following advantages:
1. in the photovoltaic module, the upper part and the lower part of the battery piece are not covered by the crosslinking adhesive film, and the crosslinking adhesive film around the battery piece is used for crosslinking the module. The surface of the battery piece is not provided with a crosslinking adhesive film to absorb incident light, so that the light absorption efficiency of the battery piece is improved, and the conversion efficiency of the battery is further improved.
2. According to the photovoltaic module, the upper substrate layer and the back plate layer are separated from the battery piece by a layer of air or other protective gas (depending on packaging environment), and metal ions such as sodium, magnesium and the like in glass cannot migrate into the battery piece, so that PID effect cannot occur.
3. The photovoltaic module reduces the use amount of the crosslinked adhesive film and reduces the production cost to a certain extent.
4. In the photovoltaic module, the anti-reflection films are prepared on the upper surface and the lower surface of the upper substrate layer, the transmittance is more than 98% at the wavelength of 600-900nm, and the transmittance is more than 96% at the wavelength of 500-1100 nm. The materials used are environment-friendly, pollution-free, simple in process and low in cost, and the pulling method is suitable for large-scale production.
5. According to the photovoltaic module, the light reflecting layer is added between the back plate layer and the battery, so that the light utilization rate of the module is improved to the greatest extent, the photoelectric conversion efficiency is improved by about 0.5% after the light reflecting layer is added, and the cost is hardly increased.
The foregoing description is only an overview of the present invention, and is intended to provide a better understanding of the present invention, as it is embodied in the following description, with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
Fig. 1 shows the transmission spectrum of the upper substrate layer with different antireflection films a.
Fig. 2 shows a reflection spectrum of the battery sheet (with an antireflection film B on the upper surface) incident on the surface of the battery sheet according to the present invention.
FIG. 3 is a schematic structural view of comparative example 1;
FIG. 4 is a schematic structural diagram of embodiment 1 of the present invention;
FIG. 5 is a schematic structural diagram of embodiment 2 of the present invention;
FIG. 6 is a schematic structural diagram of embodiment 3 of the present invention;
FIG. 7 is a schematic structural diagram of embodiment 4 of the present invention;
FIG. 8 is a schematic structural view of embodiment 5 of the present invention;
FIG. 9 is an I-V curve for comparative example 1 and examples 1-4;
FIG. 10 is an I-V curve of example 5;
FIG. 11 is an I-V curve of example 6;
FIG. 12 is an I-V curve of example 7;
reference numerals illustrate:
1-an antireflection film A; 2-an upper base layer; a 3-EVA layer; 4-an antireflection film B; 5-battery pieces; 6-reflecting paper; 7-backing layer.
Detailed Description
The following describes in further detail the embodiments of the present invention with reference to the drawings and examples. The following examples are illustrative of the invention and are not intended to limit the scope of the invention.
In the examples and comparative examples of the present invention, the single cell sheet was selected to have an area of 2.5X2.5 (cm) 2 ) Is provided. The battery piece is used for standard light source (100 mW/cm) 2 ) The following parameters were as follows: the open circuit voltage was about 0.61V and the short circuit current was about 32mA/cm 2 The series resistance is 0.5 omega, the parallel resistance is 2000 omega, and the conversion efficiency is about 14.5%. After the battery piece is packaged into a component according to the comparative example and the embodiment, testing the output characteristic under a standard light source to obtain conversion efficiency; the anti-PID test conditions for the comparative example and the example are: and covering aluminum foil on the surface of the component at the humidity of 85% and the temperature of 85 ℃ and connecting a 200V positive electrode, and connecting a battery with a negative electrode, wherein the testing time is 48 hours.
In the following examples of the present invention, glass is selected for both the upper substrate layer 2 and the backsheet layer 7. Fig. 1 shows transmission spectra of transparent glasses (with an antireflection film a on the upper and lower surfaces) having different refractive indexes (n) according to the present invention, and for comparison, transmission spectra of a base glass without an antireflection film and a glass with an antireflection film on the upper surface are also shown. At the maximum antireflection wavelength of 600nm (corresponding to the strongest spectral line in the solar spectrum), the transmittance of the antireflection film A (refractive index of 1.28) on the upper and lower surfaces is close to 100 percent (the refractive index value of the ideal antireflection film A is 1.23); when the refractive index of the antireflection film a deviates from 1.28, the transmittance decreases. When the refractive index of the antireflection film a is 1.46 (close to glass 1.52), the antireflection effect is significantly reduced. The refractive index of the antireflection film a of the comparative example and all examples in the present invention was selected to be 1.28.
Fig. 2 shows the reflection spectrum of the battery plate (with an antireflection film B on the upper surface) according to the present invention, and the reflection spectrum of the original battery plate is also shown. At a maximum antireflective wavelength of 600nm (corresponding to the strongest spectral line in the solar spectrum), the top surface of the original cell (with Si 3 N 4 A layer with a refractive index of around 2.0) is near 0. When the refractive index of the antireflection film B increases from 1.15, the reflectance at 600nm gradually increases; at the same time, the reflectance in the range of about 400nm and 700-1100nm gradually decreases. In the sum, when the refractive index of the antireflection film B is 1.15-1.75, the antireflection effect is better than that of the original battery piece, and the refractive index of the antireflection film B is preferably 1.36. When the refractive index of the antireflection film B is greater than 1.75, there is no antireflection effect. The refractive index of the antireflection film B of all the examples in the present invention was 1.36.
In the following examples and comparative examples of the present invention, the anti-reflection film a used was an acid-base catalyzed TEOS mixed sol; the anti-reflection film B adopts TEOS and TiO catalyzed by acid and alkali 2 Mixing the sol. The crosslinked adhesive film layer used is an EVA layer.
Comparative example 1
As shown in fig. 3, a photovoltaic cell module of this comparative example includes an upper substrate layer 2, an EVA layer 3, a cell 5, an EVA layer 3 and a back plate layer 7 which are sequentially disposed from top to bottom, the upper and lower sides of the cell 5 are all covered by the EVA layer 3, and the upper surface of the upper substrate layer 2 has an antireflection film A1.
The I-V curve of this comparative example is shown in fig. 9 as curve 1, tested under standard light source. The photoelectric conversion efficiency calculated according to the I-V curve was 13.8%. After the PID resistance test, the photoelectric conversion efficiency is obviously reduced by 2.6 percent.
Example 1
As shown in fig. 4, the photovoltaic cell assembly of the invention comprises an upper substrate layer 2, an EVA layer 3, a cell 5, an EVA layer 3 and a back plate layer 7 which are sequentially arranged from top to bottom, wherein the upper surface of the upper substrate layer 2 is provided with an antireflection film A1, the EVA layer 3 is provided with a hollowed-out part with the same area and shape as those of the cell 5, the cell 5 is arranged opposite to the hollowed-out part, the upper side and the lower side of the cell 5 are ensured to be not covered by EVA, and the periphery of the cell 5 is surrounded by EVA. Along the thickness direction of the photovoltaic cell assembly, the thickness of the cell 5 is smaller than that of the hollowed-out part.
The I-V curve of this example is shown in fig. 9 as curve 2 when tested under standard light. The photoelectric conversion efficiency calculated from the I-V curve was 14.3%. The reason why the power generation efficiency was enhanced as compared with comparative example 1 is mainly because incident sunlight could directly reach the battery cell 5 after the EVA above and below the battery cell 5 was removed, thereby avoiding absorption of EVA. After the PID resistance test, the photoelectric conversion efficiency is not obviously reduced.
Example 2
As shown in fig. 5, the photovoltaic cell assembly of the invention comprises an upper substrate layer 2, an EVA layer 3, a cell 5, an EVA layer 3 and a back plate layer 7 which are sequentially arranged from top to bottom, wherein the upper surface and the lower surface of the upper substrate layer 2 are both provided with an antireflection film A1, the EVA layer 3 is provided with a hollowed-out part with the same area and shape as those of the cell 5, the cell 5 is arranged opposite to the hollowed-out part, the upper side and the lower side of the cell 5 are ensured to be free from EVA coverage, and the periphery of the cell 5 is surrounded by EVA. Along the thickness direction of the photovoltaic cell assembly, the thickness of the cell 5 is smaller than that of the hollowed-out part.
The I-V curve of this example is shown in fig. 9 as curve 3 when tested under standard light. The photoelectric conversion efficiency calculated from the I-V curve was 14.4%. The reason why the power generation efficiency was enhanced as compared with comparative example 1 is mainly because the lower surface of the upper base layer 2 was also provided with the antireflection film A1, the reflection of the incident sunlight at the lower surface of the upper glass was reduced, and the sunlight incident on the cell 5 was increased. After the PID resistance test, the photoelectric conversion efficiency is not obviously reduced.
Example 3
As shown in fig. 6, the photovoltaic cell assembly of the present invention comprises an upper substrate layer 2, an EVA layer 3, a cell 5, an EVA layer 3 and a back plate layer 7 which are sequentially arranged from top to bottom, wherein the upper surface and the lower surface of the upper substrate layer 2 are both provided with an antireflection film A1, the EVA layer 3 is provided with a hollowed-out portion with the same area and shape as those of the cell 5, the cell 5 is arranged opposite to the hollowed-out portion, it is ensured that no EVA covers the upper and lower sides of the cell 5, and EVA surrounds the periphery of the cell 5. The upper surface of the battery piece 5 is provided with an antireflection film B4. Along the thickness direction of the photovoltaic cell assembly, the thickness of the cell 5 is smaller than that of the hollowed-out part.
The I-V curve of this example is shown in fig. 9 as curve 4 when tested under standard light. The photoelectric conversion efficiency calculated from the I-V curve was 14.9%. The reason why the power generation efficiency is enhanced as compared with the comparative example is mainly because the lower surface of the upper base layer 2 is also provided with the antireflection film A1 and the antireflection film B4 on the upper surface of the battery piece 5, and sunlight incident on the battery piece 5 is increased. After the PID resistance test, the photoelectric conversion efficiency is not obviously reduced.
Example 4
As shown in fig. 7, the photovoltaic cell assembly of the present invention comprises an upper substrate layer 2, an EVA layer 3, a cell 5, an EVA layer 3 and a back plate layer 7 which are sequentially arranged from top to bottom, wherein the upper surface and the lower surface of the upper substrate layer 2 are both provided with an antireflection film A1, the EVA layer 3 is provided with a hollowed-out portion with the same area and shape as those of the cell 5, the cell 5 is arranged opposite to the hollowed-out portion, it is ensured that no EVA covers the upper and lower sides of the cell 5, and EVA surrounds the periphery of the cell 5. The upper surface of the battery piece 5 is provided with an antireflection film B4. And a reflective paper 6 is arranged right below the battery piece 5. Along the thickness direction of the photovoltaic cell assembly, the thickness of the cell 5 is smaller than that of the hollowed-out part.
The I-V curve of this example is shown in fig. 9 as curve 5 when tested under standard light. The photoelectric conversion efficiency calculated from the I-V curve was 15.4%. The reason why the power generation efficiency is enhanced as compared with the comparative example is mainly because the lower surface of the upper glass is also provided with the antireflection film A1 and the antireflection film B4 on the upper surface of the battery piece 5, the sunlight incident to the battery piece 5 is increased; meanwhile, sunlight passing through the battery piece 5 is reflected back to the battery piece 5 again by the reflective paper 6, so that the utilization rate of the sunlight is improved. After the PID resistance test, the photoelectric conversion efficiency is not obviously reduced.
Example 5
As shown in fig. 8, the photovoltaic cell assembly of the invention comprises an upper substrate layer 2, an EVA layer 3, 9 battery pieces 5, an EVA layer 3 and a back plate layer 7 which are sequentially arranged from top to bottom, wherein the upper surface and the lower surface of the upper substrate layer 2 are both provided with an antireflection film A1, the EVA layer 3 is provided with a plurality of hollowed-out parts, the area and the shape of each hollowed-out part are the same as those of the battery piece 5, each battery piece 5 is arranged opposite to the hollowed-out part, the upper side and the lower side of the battery piece 5 are ensured to be free from EVA coverage, and the periphery of the battery piece 5 is surrounded by EVA, so that no EVA film exists between the 9 battery pieces 5 and the upper substrate layer 2. The 9 battery pieces 5 form a 3×3 array, and the 9 battery pieces 5 are connected in series; the upper surface of each battery piece 5 is provided with an antireflection film B4. A piece of reflective paper 6 is arranged under each battery piece 5. Along the thickness direction of the photovoltaic cell assembly, the thickness of the cell 5 is smaller than that of the hollowed-out part.
The I-V curve of this example is shown in FIG. 10, as measured under a standard light source. The photoelectric conversion efficiency calculated from the I-V curve was 15.41%. After the PID resistance test, the photoelectric conversion efficiency is not obviously reduced.
Example 6
The photovoltaic cell assembly is similar to the embodiment 5 in structure, and comprises an upper substrate layer 2, an EVA layer 3, 36 cell pieces 5, an EVA layer 3 and a back plate layer 7 which are sequentially arranged from top to bottom, wherein an antireflection film A1 is arranged on the upper surface and the lower surface of the upper substrate layer 2, a plurality of hollowed-out parts are arranged on the EVA layer 3, the area and the shape of each hollowed-out part are the same as those of the cell pieces 5, each cell piece 5 is opposite to the hollowed-out parts, the upper side and the lower side of the cell piece 5 are ensured to be free from EVA coverage, EVA is surrounded around the cell piece 5, and thus no EVA adhesive film exists between the 36 cell pieces 5 and the upper substrate layer 2. The 36 battery pieces 5 form a 6×6 array, and the 36 battery pieces 5 are connected in series; the upper surface of each battery piece 5 is provided with an antireflection film B4. A piece of reflective paper 6 is arranged under each battery piece 5. Along the thickness direction of the photovoltaic cell assembly, the thickness of the cell 5 is smaller than that of the hollowed-out part.
The I-V curve of this example is shown in FIG. 11, which is obtained by testing under standard light source. The photoelectric conversion efficiency calculated from the I-V curve was 15.44%. After the PID resistance test, the photoelectric conversion efficiency is not obviously reduced.
Example 7
The photovoltaic cell assembly is similar to the embodiment 5 in structure, and comprises an upper substrate layer 2, an EVA layer 3, 72 pieces of cell pieces 5, an EVA layer 3 and a back plate layer 7 which are sequentially arranged from top to bottom, wherein an antireflection film A1 is arranged on the upper surface and the lower surface of the upper substrate layer 2, a plurality of hollowed-out parts are arranged on the EVA layer 3, the area and the shape of each hollowed-out part are the same as those of the cell pieces 5, each cell piece 5 is opposite to the hollowed-out part, the upper side and the lower side of the cell piece 5 are ensured to be free from EVA coverage, EVA is surrounded around the cell piece 5, and thus no EVA adhesive film exists between the 72 pieces of cell piece 5 and the upper substrate layer 2. The 72 battery pieces 5 constitute a 12×6 array, and the 72 battery pieces 5 are connected in series; the upper surface of each battery piece 5 is provided with an antireflection film B4. A piece of reflective paper 6 is arranged under each battery piece 5. Along the thickness direction of the photovoltaic cell assembly, the thickness of the cell 5 is smaller than that of the hollowed-out part.
The I-V curve of this example is shown in FIG. 12, which is obtained by testing under standard light source. The photoelectric conversion efficiency calculated according to the I-V curve was 15.46%. After the PID resistance test, the photoelectric conversion efficiency is not obviously reduced.
The above is only a preferred embodiment of the present invention, and it should be noted that it should be understood by those skilled in the art that several improvements and modifications can be made without departing from the technical principle of the present invention, and these improvements and modifications should also be considered as the protection scope of the present invention.
Claims (10)
1. A photovoltaic cell assembly comprising at least one cell, characterized in that: the upper and lower sides of the battery piece are respectively provided with a crosslinked adhesive film layer, the crosslinked adhesive film layer is provided with at least one hollowed-out part, the battery piece is arranged opposite to the hollowed-out part, and the area of the hollowed-out part is not smaller than the area of the battery piece along the horizontal direction, so that the upper and lower sides of the battery piece are not covered by the crosslinked adhesive film;
the crosslinked adhesive film layer is provided with at least one hollowed-out part, namely, part of the crosslinked adhesive film is removed from the whole crosslinked adhesive film layer, so that the crosslinked adhesive film layer forms a netlike film with a hollowed-out structure.
2. The photovoltaic cell assembly of claim 1, wherein: the solar cell module further comprises an upper base layer and a back plate layer, wherein the upper base layer and the back plate layer are respectively positioned on one side, far away from the cell, of the crosslinked adhesive film layer.
3. The photovoltaic cell assembly of claim 2, wherein: the upper surface and the lower surface of the upper basal layer are provided with an antireflection film A; the refractive index of the antireflection film A is 1.15-1.46.
4. The photovoltaic cell assembly of claim 2, wherein: the upper substrate layer is transparent glass, and the back plate layer is a glass back plate or a polymer back plate.
5. The photovoltaic cell assembly of claim 2, wherein: the upper surface of the battery piece is also provided with an antireflection film B, and the refractive index of the antireflection film B layer is 1.15-1.75.
6. The photovoltaic cell assembly of claim 5, wherein: the area of the antireflection film B is not smaller than the area of the battery piece.
7. The photovoltaic cell assembly of claim 1, wherein: the solar cell further comprises a light reflecting layer right facing the lower part of the cell, and the area of the light reflecting layer is not smaller than that of the cell.
8. The photovoltaic cell assembly of claim 1, wherein: the battery pieces are multiple, and the multiple battery pieces are arranged into an array structure.
9. The photovoltaic cell assembly of claim 1, wherein: the crosslinked adhesive film layer is EVA, PVB or PVF.
10. The photovoltaic cell assembly of claim 1, wherein: and the thickness of the battery piece is not greater than the thickness of the hollowed-out part along the thickness direction of the photovoltaic battery component.
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| CN201910414897.5A CN109994564B (en) | 2019-05-17 | 2019-05-17 | Photovoltaic cell assembly |
| LU102080A LU102080B1 (en) | 2019-05-17 | 2019-11-22 | Photovoltaic cell module |
| PCT/CN2019/120131 WO2020233036A1 (en) | 2019-05-17 | 2019-11-22 | Photovoltaic battery assembly |
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| CN110911514A (en) * | 2019-11-06 | 2020-03-24 | 余长岳 | Solar power generation panel |
| US11987734B2 (en) | 2020-06-29 | 2024-05-21 | Hangzhou First Applied Material Co., Ltd. | Anti-PID encapsulation adhesive film, photovoltaic module, and photovoltaic module manufacturing method |
| CN113644155B (en) * | 2021-07-28 | 2024-05-10 | 浙江晶科能源有限公司 | Backboard and photovoltaic module |
| CN115295648A (en) * | 2022-07-06 | 2022-11-04 | 常州工学院 | Photovoltaic cell assembly |
| CN116435392B (en) * | 2023-05-16 | 2024-07-30 | 武汉美格科技股份有限公司 | Flexible photovoltaic module |
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| WO2020233036A1 (en) | 2020-11-26 |
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| CN109994564A (en) | 2019-07-09 |
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