CN104409389B - 一种机台 - Google Patents

一种机台 Download PDF

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Publication number
CN104409389B
CN104409389B CN201410625878.4A CN201410625878A CN104409389B CN 104409389 B CN104409389 B CN 104409389B CN 201410625878 A CN201410625878 A CN 201410625878A CN 104409389 B CN104409389 B CN 104409389B
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supporting pin
electrostatic
board
substrate
pin
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CN104409389A (zh
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王海涛
汪雯
贾宏康
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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Priority to US14/888,055 priority patent/US10330963B2/en
Priority to PCT/CN2015/074831 priority patent/WO2016070547A1/zh
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    • G—PHYSICS
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    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods

Abstract

本发明提供一种机台，用于承载基板，解决了由于静电消除不完全导致基板的破损以及ESD不良的技术问题。包括：本体；销孔，在厚度方向贯穿本体；支撑销，容纳在销孔中，可在厚度方向上下移动，支撑销包括内置的腔，支撑销可从腔中向本体上表面喷洒防静电液。本发明中的支撑销通过对本体上表面喷洒防静电液，使防静电液在本体表面形成导电薄膜层，从而消除基板在送入和送出的过程中在本体表面产生的静电，减少本体的ESD不良和基板的破损，提高产品的品质。

Description

一种机台
技术领域
本发明涉及半导体器件或TFT-LCD面板生产领域，特别是指用于清除基板静电的机台。
背景技术
Array CVD Repair设备是TFT-LCD面板领域在阵列段主要维修设备，用于对阵列基板的线不良和点不良进行查看、判级和维修，如图1所示，现有技术中，机台包括承载基板1的本体2和支撑销3，当基板1送入时，支撑销3升起，在本体2上方支撑基板1，随着支撑销3下降，基板1放置在本体2上；当基板1送出时，支撑销3升起，在本体2上方支撑基板1，随后取出基板1，在以上过程中，离子棒吹的去离子风由于基板1的阻挡和存在盲区，无法到达本体2上方和基板1上方部分区域，因此存在以下风险：
1、在基板1送入或送出过程中，基板1和本体2之间有接触，使基板1在本体2表面产生摩擦，从而使本体2表面的静电平衡被打破，局部产生静电积累，诱导TFT整列基板上信号线交叠处电荷聚集，因此在后端工艺条件激发下，产生不能维修的断路或短路不良；
2、在支撑销3下降，脱离基板1时，由于支撑销3与基板1分离的速度过快，基板1上分布的信号线交叠处，因为周围环境的骤变，产生静电击穿现象，使部分信号线短路或短路的ESD不良；
3、随着基板1的厚度逐渐减小(0.7T→0.4T)，本体2表面一旦有静电积累，会吸附基板1，从而在基板1被托起时，产生弯曲变形，导致裂纹破损。
发明内容
本发明提出一种机台，解决了现有技术中由于基板在机台上因为静电导致的断路、短路不良以及损坏的技术问题。
本发明的技术方案是这样实现的：
一种机台，用于承载基板，包括：
本体；
销孔，在厚度方向贯穿本体；
支撑销，容纳在销孔中，可在厚度方向上下移动，支撑销包括内置的腔，支撑销可从腔中向本体上表面喷洒防静电液。
优选的，还包括输液管和储液容器，输液管与支撑销的腔连通且其下端浸入储液容器的防静电液中，支撑销的侧壁上设置有用于喷洒防静电液的通孔。
优选的，支撑销为多个，多个支撑销喷洒的防静电液能覆盖整个本体的上表面。
优选的，所述支撑销为多个，输液管包括输液总管和与输液总管连通的多个分支管，输液总管的总输入口通过开口与储液容器连通，每个分支管的输出口与一个支撑销的腔连通。
优选的，储液容器包括气动控制输液装置，用于控制输液管的防静电液的喷洒。
优选的，气动控制输液装置包括气源、与气源连通的输气管和控制气体排放的电磁阀，输气管与储液容器连通。
优选的，还包括静电测试装置和控制单元，静电测试装置用于测试本体和/或承载基板的静电参数并传送给控制单元，控制单元用于根据测得的静电参数控制电磁阀的开闭和支撑销的升降，从而控制防静电液的喷洒。
优选的，还包括报警单元，与控制单元相连，当静电参数超出阈值时，控制单元控制报警单元发出警示信息。
优选的，本体的上表面设置有凹陷，静电测试装置置于凹陷中。
优选的，静电测试装置测试的静电参数为从第一设定电压到第二设定电压的静电消散时间，其中第一设定电压高于第二设定电压。
优选的，控制单元还用于根据静电参数的大小，分为多个级别，根据级别控制电磁阀的开启时间和/或开启档位。
本发明的有益效果是：
本发明将支撑销内部设置空腔，通过空腔向本体上表面喷洒防静电液，使防静电液在本体表面形成导电薄膜层，消除本体表面的静电，达到彻底消除静电的目的。
此外，支撑销与装有防静电液的储液容器相连，再将储液容器与气动控制输液装置相连接，通过控制气体的电磁阀门，控制防静电液的流量和喷洒时间，能有效消除摩擦等原因产生的静电，防止静电干扰及灰尘粘附现象。
同时在本体中还安装静电测试装置，监控本体表面区域的静电量，一旦超出设定的范围内，将会出现报警，从而建立静电报警与防静电液喷出控制系统，能够自动涂抹防静电液，防静电液的量和时间均可控，代替现有通过人工涂抹带来的时间浪费和涂抹不均匀，使涂抹均匀，便捷。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明现有技术中基板送入和送出时的状态图；
图2为本发明的立体图；
图3为图2所示机台的俯视图；
图4为图2所示机台的侧视图；
图5为图2所示机台的工作原理图；
图6为图2所示机台的原理框图。
图中：
1、基板；2、本体；3、支撑销；4、销孔；5、通孔；6、输液管；7、储液容器；8、气源；9、输气管；10、电磁阀；11、静电测试装置；12、控制单元；13、报警单元；14、安装部件；15、移动马达；16、结构支架；17、激光单元。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清除、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例，基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另作定义，本文使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“上”、“下”、等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
如图2所示，本发明中的机台，用于承载基板，包括：销孔4设置在本体2上并在厚度方向贯穿本体2，支撑销3容纳在销孔4中，可在本体2的厚度方向上下移动，支撑销3为内部设置有空腔的圆柱体结构，支撑销3可从空腔中向本体2上表面喷洒防静电液。进一步地，支撑销3以矩阵排列的方式均匀分布在本体2的各个位置，在喷洒防静电液时，可以完全覆盖整个本体2表面，支撑销3的个数可按照机台的实际需要设置。
本体2上还设置有放置例如为静电测试仪的静电测试装置11的凹陷14，从而方便随时检测机台上表面的静电，凹陷14的个数可以为4个但不限于4个，并分别设置在本体2的四个区域，静电测试装置11用于实时测试本体2和/或承载基板1的静电参数并传送给控制单元12，通过数据传输、反馈，实时分析本体2上的静电参数变化，防止本体2静电过大，对基板1产生影响。
注意，机台可以为任何能够承载基板的设备，除了本发明所描述的部件之外，其还可能包括其他部件来完成所需功能。例如如图2所示，该机台上还包括：激光单元17，用于对基板上导电薄膜的金属残留物进行切割，移动马达15，置于本体2宽度方向的两侧，用于驱动结构支架16移动；结构支架16，置于移动马达15的上方，通过沿本体2的长度方向移动从而对不良点进行查看并判级。
如图3和图4所示，支撑销3为顶端密封的中空的圆柱体结构，侧壁上设置有4个用于喷洒防静电液的圆形通孔5，通孔5的大小相等，以支撑销3的中心对称分布，可以保证通孔5喷出的防静电液均匀，流量大小容易控制。本发明中通孔5的形状和数量不限于本实施例提供的形状和数量，可根据实际生产需要进行通孔5的设计，通过通孔5使喷出来的防静电液成雾状，使涂抹均匀，便捷。
每个支撑销3的腔与对应的输液管6连通，具体的，如图4所示，支撑销3为多个，储液容器7的上表面分别设置有容纳输液管6和输气管9的开口，输液管6包括输液总管和与输液总管连通的多个分支管，输液总管的总输入口浸入储液容器7的防静电液中，每个分支管的输出口与一个支撑销3的腔连通。其中，输液总管的管径大于分支管的管径，从而便于防静电液通过分支管引入支撑销3。
输液总管的下端通过对应的开口浸入储液容器7的防静电液中，便于将防静电液完全输入到对应的支撑销3的腔内部，防止防静电液外漏。本实施例中的输液管6采用分-总结构的输液管，即多个输出口对应一个总输入口，输液管6的各个分支管的输出口与对应的支撑销3的腔密闭连通，输液管6的输液总管的总输入口浸入储液容器7的防静电液中，储液容器7包括用于控制输液管6中的防静电液的喷洒的气动控制输液装置，气动控制输液装置包括气源8、与气源8连通的输气管9和控制气体排放的电磁阀10，输气管9的另一端通过开口与储液容器7密闭连通。
如图2至图6所示，本发明的工作原理是：
机台启动后，静电测试装置11开始采集静电参数，具体的，当基板1被送入本体2表面时，支撑销3升起以支撑基板1，此后支撑销3下降，将基板1放到本体2上，此时对基板1吹气，卡夹(未示出)夹持基板1进行位置校准和固定，停止吹气，解除卡夹，结构支架移动对不良点进行查看并判级，结束判级和维修后，支撑销3升起，基板1取出，期间静电测试装置11实时采集本体2表面的静电参数，并进行分析处理。
本发明中的静电参数可以为从第一设定电压到第二设定电压的静电消散时间，其中第一设定电压高于第二设定电压。例如为当电压升到1000V后再下降到0V时的静电消散时间，在基板1送入和送出的过程中，静电测试装置11开始测量，当电压升到1000V后再下降到0V的静电消散时间在10s以内为正常环境，当静电消散时间在10-20s内时，定义为四级报警，当静电消散时间在20-30s为三级报警，当静电消散时间在30-60s为二级报警，当静电消散时间大于60s为一级报警，控制单元12根据测得的静电消散时间控制电磁阀10的开闭和支撑销3的升降，从而控制防静电液的喷洒，本发明中的静电参数不限于静电消散时间，可根据需要自行设计。当静电参数超出阈值时，基板1移走，支撑销3升起，根据报警的级别，控制单元12控制电磁阀10的打开时间和档位大小，从而通过控制气流的大小和持续时间，将防静电液从储液容器7中通过输液管6排到支撑销3侧壁上的通孔5，并通过通孔5喷洒出去，从而控制防静电液的流量和喷洒时间，当防静电液落在本体2表面后，形成极薄的交织透明的导电薄膜，提供高效的静电耗散功能，能有效消除摩擦等原因产生的静电，防止静电干扰及灰尘粘附现象，且防静电液是由极性基团和非极性基团组成，可以溶于水和醇类液体，无毒、不燃、无污染，使用安全。
进一步地，控制单元12还与报警单元13相连，当静电参数超出相应的报警级别时，控制单元12控制报警单元13发出警示信息，警示信息可以采用LED闪烁或蜂鸣等。当有警示信息时，喷出防静电液消除静电，静电测试装置11检测静电参数正常后，基板1送入，结构支架移动进行不良点查看、判级和维修，静电测试装置11继续监控本体2表面的静电状况，从而可以系统地控制防静电液的涂抹，代替原来通过人工涂抹带来的时间浪费、涂抹不均匀和产能低的问题，而自动涂抹防静电液，防静电液的量和时间均可控。
应该理解的是，在本发明中，控制单元可以包括各种硬件和软件，硬件例如CPU、PLC、单片机、存储器件、开关器件、逻辑电路等，本发明对此不作限定。控制单元可以为集成一体的单元，也可以包括各个分立单元。其他器件可与控制单元存在信号联系。本发明还可以包括由控制单元单元控制的电机等来实现对支撑销3等的移动。
显然，本领域的技术人员可以对半发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求以及等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (5)

1.一种机台，用于承载基板，其特征在于，包括：
本体；
销孔，在厚度方向贯穿所述本体；
支撑销，容纳在所述销孔中，可在厚度方向上下移动，所述支撑销包括内置的腔，所述支撑销可从所述腔中向所述本体上表面喷洒防静电液；
所述机台还包括输液管和储液容器，所述输液管与所述支撑销的腔连通且其下端浸入所述储液容器的防静电液中，所述支撑销的侧壁上设置有用于喷洒所述防静电液的通孔；
所述储液容器包括气动控制输液装置，用于控制所述输液管的防静电液的喷洒；所述气动控制输液装置包括气源、与所述气源连通的输气管和控制气体排放的电磁阀，所述输气管与所述储液容器连通；
所述机台还包括静电测试装置和控制单元，所述静电测试装置用于测试所述本体和/或所承载基板的静电参数并传送给所述控制单元，所述控制单元用于根据测得的所述静电参数控制所述电磁阀的开闭和所述支撑销的升降，从而控制防静电液的喷洒；
所述静电测试装置测试的所述静电参数为从第一设定电压到第二设定电压的静电消散时间，其中第一设定电压高于第二设定电压；
所述控制单元还用于根据所述静电参数的大小，分为多个级别，根据级别控制所述电磁阀的开启时间和/或开启档位。
2.如权利要求1所述的机台，其特征在于，所述支撑销为多个，所述多个支撑销喷洒的防静电液能覆盖整个所述本体的上表面。
3.如权利要求1所述的机台，其特征在于，所述支撑销为多个，所述输液管包括输液总管和与所述输液总管连通的多个分支管，所述输液总管的总输入口通过开口与所述储液容器连通，每个所述分支管的输出口与一个所述支撑销的腔连通。
4.如权利要求1所述的机台，其特征在于，还包括报警单元，与所述控制单元相连，当所述静电参数超出阈值时，所述控制单元控制所述报警单元发出警示信息。
5.如权利要求1所述的机台，其特征在于，所述本体的上表面设置有凹陷，所述静电测试装置置于所述凹陷中。
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