CN104409363A - Interposer, manufacturing method thereof and packaging structure - Google Patents
Interposer, manufacturing method thereof and packaging structure Download PDFInfo
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- CN104409363A CN104409363A CN201410664902.5A CN201410664902A CN104409363A CN 104409363 A CN104409363 A CN 104409363A CN 201410664902 A CN201410664902 A CN 201410664902A CN 104409363 A CN104409363 A CN 104409363A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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Abstract
本发明公开了一种转接板及其制作方法、封装结构。该转接板包括:板体,具有相对的第一表面和第二表面,并在第一表面和第二表面之间形成有贯穿该板体的锥台形通孔;绝缘体,填充在锥台形通孔中,其中形成有贯穿板体的圆柱形通孔;导电体,填充在圆柱形通孔中;以及第一布线结构和第二布线结构,分别布置在板体的第一表面和第二表面上,并与导电体电连接。本发明提供的转接板中,提高了转接板上器件的集成密度,进而提高了整个封装结构的集成密度,并且降低了玻璃转接板中导电体与板体由于热膨胀系数不匹配等引起的热应力问题,避免了硅转接板中产生的电学问题,因此增强了转接板的机械和电学可靠性。
The invention discloses an adapter board, a manufacturing method and a packaging structure thereof. The adapter plate includes: a plate body with opposite first and second surfaces, and a frustum-shaped through hole penetrating through the plate body is formed between the first surface and the second surface; an insulator is filled in the frustum-shaped through hole In the hole, a cylindrical through hole penetrating the board body is formed therein; the conductor is filled in the cylindrical through hole; and the first wiring structure and the second wiring structure are respectively arranged on the first surface and the second surface of the board body on, and electrically connected to the conductor. In the adapter board provided by the present invention, the integration density of devices on the adapter board is improved, thereby increasing the integration density of the entire packaging structure, and reducing the thermal expansion coefficient mismatch between the conductor and the board in the glass adapter board. The thermal stress problem of the silicon interposer avoids the electrical problems generated in the silicon interposer, thus enhancing the mechanical and electrical reliability of the interposer.
Description
技术领域technical field
本发明涉及封装领域,具体地,涉及一种转接板及其制作方法、封装结构。The invention relates to the field of packaging, in particular to an adapter board, a manufacturing method thereof, and a packaging structure.
背景技术Background technique
三维系统封装利用芯片的相互堆叠,从而实现了不同芯片在垂直方向的高效互连。转接板(interposer)在三维系统集成中起到了承上启下的作用,使得信号输出端口实现再分配。转接板的制作主要通过在其板体上打孔,并填充导电体,从而得到信号的垂直传输通道。转接板的板体上钻取的锥形孔由于其平面端的孔径大于尖端的孔径,这种结构使得填充的导电体在锥形孔的平面端一侧占据了较大面积,从而限制了转接板上器件的集成数目。并且,现有的转接板主要由玻璃和硅制成,玻璃通孔的断裂强度较低,容易引起碎裂、裂纹等热机械应力问题。硅通孔中,传输通道会产生寄生电容、电感、以及漏电流等电学问题。The 3D system-in-package utilizes chips stacked on top of each other, thereby realizing efficient interconnection of different chips in the vertical direction. The interposer plays a connecting role in the three-dimensional system integration, enabling the redistribution of signal output ports. The production of the adapter board is mainly by punching holes in the board body and filling the conductors, so as to obtain the vertical transmission channel of the signal. The tapered hole drilled on the board body of the adapter board has a larger diameter of the plane end than the tip, this structure makes the filled conductor occupy a larger area on the side of the plane end of the tapered hole, thus limiting the transfer rate. The number of integrated devices on the board. Moreover, the existing adapter plate is mainly made of glass and silicon, and the fracture strength of the glass through hole is low, which easily causes thermomechanical stress problems such as fragmentation and cracks. In TSVs, the transmission channel will generate electrical problems such as parasitic capacitance, inductance, and leakage current.
发明内容Contents of the invention
本发明的目的是提供一种器件集成密度较大、机械和电学可靠性较强的转接板及其制作方法、封装结构。The object of the present invention is to provide an adapter plate with high device integration density and strong mechanical and electrical reliability, its manufacturing method and packaging structure.
为了实现上述目的,本发明提供一种转接板,该转接板包括:板体,具有相对的第一表面和第二表面,并在所述第一表面和所述第二表面之间形成有贯穿该板体的锥台形通孔;绝缘体,填充在所述锥台形通孔中,所述绝缘体中形成有贯穿所述板体的圆柱形通孔;导电体,填充在所述圆柱形通孔中;以及第一布线结构和第二布线结构,分别布置在所述板体的所述第一表面和所述第二表面上,并与所述导电体电连接。In order to achieve the above object, the present invention provides an adapter plate, which comprises: a plate body having a first surface and a second surface opposite to each other, and a plate body is formed between the first surface and the second surface There is a truncated cone-shaped through hole that runs through the board; an insulator is filled in the truncated cone-shaped through hole, and a cylindrical through hole that runs through the board is formed in the insulator; a conductor is filled in the cylindrical through-hole and a first wiring structure and a second wiring structure respectively arranged on the first surface and the second surface of the board and electrically connected to the conductor.
优选地,所述板体由以下中的至少一者制成:玻璃、硅、碳化硅和陶瓷。Preferably, the plate body is made of at least one of the following: glass, silicon, silicon carbide and ceramics.
优选地,所述绝缘体由高分子聚合物材料制成。Preferably, the insulator is made of high molecular polymer material.
优选地,该转接板还包括:无源器件,布置在所述板体的所述第一表面一侧和/或所述第二表面一侧,并与同侧的布线结构电连接;和/或微机电系统器件,布置在所述板体的所述第一表面一侧和/或所述第二表面一侧,并与同侧的布线结构电连接。Preferably, the adapter board further includes: passive components arranged on the side of the first surface and/or the side of the second surface of the board body, and electrically connected to the wiring structure on the same side; and and/or micro-electro-mechanical system devices arranged on the side of the first surface and/or the side of the second surface of the board body, and electrically connected to the wiring structure on the same side.
本发明还提供一种转接板的制作方法,该方法包括:从转接板的板体的第一表面一侧对所述板体进行打孔,以在所述板体内形成锥形盲孔;在所述锥形盲孔中填充绝缘体;从所述第一表面一侧对所述绝缘体进行打孔,以在所述绝缘体内形成圆柱形盲孔;在所述圆柱形盲孔中填充导电体;在所述第一表面一侧对所述板体进行布线,以形成与所述导电体电连接的第一布线结构;从与所述第一表面相对的所述板体的第二表面一侧对所述板体进行减薄,使得所述导电体从所述板体露出;以及在所述第二表面一侧对所述板体进行布线,以形成与所述导电体电连接的第二布线结构。The present invention also provides a method for making an adapter board, the method comprising: punching holes in the board body of the adapter board from the side of the first surface of the board body, so as to form a tapered blind hole in the board body ; fill the insulator in the tapered blind hole; punch the insulator from the first surface side to form a cylindrical blind hole in the insulator; fill the conductive hole in the cylindrical blind hole Wiring the board on one side of the first surface to form a first wiring structure electrically connected to the conductor; from the second surface of the board opposite to the first surface Thinning the board body on one side, so that the conductor is exposed from the board body; and wiring the board body on the side of the second surface, so as to form a circuit that is electrically connected to the conductor body Second wiring structure.
优选地,所述板体由以下中的至少一者制成:玻璃、硅、碳化硅和陶瓷。Preferably, the plate body is made of at least one of the following: glass, silicon, silicon carbide and ceramics.
优选地,所述绝缘体由高分子聚合物材料制成。Preferably, the insulator is made of high molecular polymer material.
优选地,该方法还包括:在所述第一表面一侧对所述板体进行布线之后,在所述第一表面一侧布置无源器件和/或微机电系统器件,使得该无源器件和/或微机电系统器件与所述第一布线结构电连接,之后,再从与所述第一表面相对的所述板体的第二表面一侧对所述板体进行减薄。Preferably, the method further includes: after wiring the board on the side of the first surface, arranging passive devices and/or MEMS devices on the side of the first surface, so that the passive device And/or the MEMS device is electrically connected to the first wiring structure, and then the board is thinned from the side of the second surface of the board opposite to the first surface.
优选地,该方法还包括:在所述第二表面一侧对所述板体进行布线之后,在所述第二表面一侧布置无源器件和/或微机电系统器件,使得该无源器件和/或微机电系统器件与所述第二布线结构电连接。Preferably, the method further includes: after wiring the board on the side of the second surface, arranging passive devices and/or MEMS devices on the side of the second surface, so that the passive device And/or the MEMS device is electrically connected to the second wiring structure.
本发明还提供一种包括本发明提供的转接板的封装结构。The present invention also provides a packaging structure including the adapter plate provided by the present invention.
通过上述技术方案,在转接板的锥形盲孔中填充绝缘体,再在绝缘体中打圆柱形盲孔来填充导电体,使得最终填充的导电体为修正后孔径较小的圆柱形。因此,本发明提供的转接板中,减小了导电体的直径,提高了转接板上器件的集成密度,进而提高了整个封装结构的集成密度。并且,通孔中填充的绝缘体具有良好的电学性能和机械性能,因此,该绝缘体可以作为应力释放的缓冲层,降低了玻璃转接板中导电体与板体由于热膨胀系数不匹配等引起的热应力问题,并且该绝缘体作为绝缘层,避免了硅转接板中产生的电学问题,因而增强了转接板的机械和电学可靠性。Through the above technical solution, the insulator is filled in the tapered blind hole of the adapter plate, and the cylindrical blind hole is drilled in the insulator to fill the conductor, so that the final filled conductor is a cylindrical shape with a smaller aperture after correction. Therefore, in the adapter board provided by the present invention, the diameter of the conductor is reduced, the integration density of devices on the adapter board is increased, and the integration density of the entire packaging structure is further increased. Moreover, the insulator filled in the through hole has good electrical and mechanical properties. Therefore, the insulator can be used as a buffer layer for stress relief, reducing the heat loss caused by the thermal expansion coefficient mismatch between the conductor and the board in the glass interposer. Stress problem, and the insulator acts as an insulating layer, avoiding the electrical problems generated in the silicon interposer, thus enhancing the mechanical and electrical reliability of the interposer.
本发明的其他特征和优点将在随后的具体实施方式部分予以详细说明。Other features and advantages of the present invention will be described in detail in the following detailed description.
附图说明Description of drawings
附图是用来提供对本发明的进一步理解,并且构成说明书的一部分,与下面的具体实施方式一起用于解释本发明,但并不构成对本发明的限制。在附图中:The accompanying drawings are used to provide a further understanding of the present invention, and constitute a part of the description, together with the following specific embodiments, are used to explain the present invention, but do not constitute a limitation to the present invention. In the attached picture:
图1a和图1b是本发明的两种实施方式提供的转接板的示意图;以及Figure 1a and Figure 1b are schematic diagrams of adapter plates provided by two embodiments of the present invention; and
图2a-图2i是本发明的实施方式提供的转接板的制作方法的示意图。Fig. 2a-Fig. 2i are schematic diagrams of the manufacturing method of the adapter plate provided by the embodiment of the present invention.
附图标记说明Explanation of reference signs
100 转接板 101 板体 101a 第一表面100 Adapter board 101 Board body 101a First surface
101b 第二表面 101c 锥台形通孔 101d 锥形盲孔101b second surface 101c frusto-conical through hole 101d conical blind hole
102 绝缘体 102c 圆柱形通孔 102b 圆柱形盲孔102 Insulator 102c Cylindrical through hole 102b Cylindrical blind hole
103 导电体 104a 第一布线结构 104b 第二布线结构103 Conductor 104a First wiring structure 104b Second wiring structure
105 无源器件 106 承载片105 Passive components 106 Carrier
具体实施方式Detailed ways
以下结合附图对本发明的具体实施方式进行详细说明。应当理解的是,此处所描述的具体实施方式仅用于说明和解释本发明,并不用于限制本发明。Specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be understood that the specific embodiments described here are only used to illustrate and explain the present invention, not to limit the present invention.
图1a和图1b是本发明的两种实施方式提供的转接板的示意图。如图1a所示的实施方式中,转接板100可以包括板体101、绝缘体102、导电体103以及第一布线结构104a和第二布线结构104b。其中,板体101具有相对的第一表面101a和第二表面101b,并且在第一表面101a和第二表面101b之间可以形成有贯穿该板体101的锥台形通孔101c。绝缘体102可以填充在锥台形通孔101c中,该绝缘体102中可以形成有贯穿板体101的圆柱形通孔102c。导电体103可以填充在圆柱形通孔102c中。第一布线结构104a和第二布线结构104b可以分别布置在板体101的第一表面101a和第二表面101b上,并与所述导电体103电连接。Fig. 1a and Fig. 1b are schematic diagrams of adapter plates provided by two embodiments of the present invention. In the embodiment shown in FIG. 1 a , the interposer board 100 may include a board body 101 , an insulator 102 , a conductor 103 , and a first wiring structure 104 a and a second wiring structure 104 b. Wherein, the plate body 101 has a first surface 101 a and a second surface 101 b opposite to each other, and a frustum-shaped through hole 101 c penetrating through the plate body 101 may be formed between the first surface 101 a and the second surface 101 b. The insulator 102 may be filled in the frustum-shaped through hole 101c, and the insulator 102 may be formed with a cylindrical through hole 102c penetrating the plate body 101 . The electrical conductor 103 may be filled in the cylindrical through hole 102c. The first wiring structure 104 a and the second wiring structure 104 b may be arranged on the first surface 101 a and the second surface 101 b of the board body 101 respectively, and be electrically connected to the conductor 103 .
其中,板体101可以由以下中的至少一者制成:玻璃、硅、碳化硅和陶瓷。绝缘体102可以由高分子聚合物材料(例如,苯并环丁烯BCB、光敏聚酰亚胺PSPI等)制成。Wherein, the plate body 101 may be made of at least one of the following: glass, silicon, silicon carbide and ceramics. The insulator 102 can be made of high molecular polymer material (for example, benzocyclobutene BCB, photosensitive polyimide PSPI, etc.).
需要说明的是,本说明书附图中以两个锥台形通孔101c和两个导电体103为例进行说明。但是应当理解的是,本文中通孔和导电体的数目只是起到示例性的作用,而不作为对本发明范围的限制。It should be noted that, in the drawings of this specification, two truncated cone-shaped through holes 101c and two conductors 103 are taken as examples for illustration. However, it should be understood that the numbers of via holes and conductors herein are only exemplary and not intended to limit the scope of the present invention.
应该理解的是,附图中锥台形通孔101c和圆柱形通孔102c的形状仅仅示例性地示出了规则的锥台形和圆柱形,而本发明所述的锥台形(以及后面将要描述的锥形)和圆柱形并不局限于严格意义的锥台形(锥形)和圆柱形结构。只要是近似锥台形(锥形)和圆柱形的结构都包括在本发明的保护范围之内。It should be understood that the shapes of the truncated cone-shaped through hole 101c and the cylindrical through-hole 102c in the accompanying drawings only show regular truncated cone-shaped and cylindrical shapes as examples, while the truncated-conical shape described in the present invention (and the shape to be described later) Conical) and cylindrical shapes are not limited to frustum-shaped (conical) and cylindrical structures in the strict sense. As long as the approximate frustum-shaped (conical) and cylindrical structures are included within the protection scope of the present invention.
优选地,如图1b所示的另一实施方式中,考虑电路功能的需要,该转接板100还可以包括无源器件105和/或微机电系统器件(未示出)。该无源器件105可以布置在板体101的第一表面101a一侧和/或第二表面101b一侧,并与同侧的布线结构电连接(未示出)。同样地,微机电系统器件也可以布置在板体101的所述第一表面101a一侧和/或所述第二表面101b一侧,并与同侧的布线结构电连接。其中,无源器件105例如可以是电阻、电容、滤波器、谐振器以及光无源器件等。Preferably, in another implementation manner as shown in FIG. 1 b , the interposer board 100 may further include passive devices 105 and/or MEMS devices (not shown) in consideration of circuit function requirements. The passive device 105 can be arranged on the side of the first surface 101a and/or the side of the second surface 101b of the board body 101, and is electrically connected to the wiring structure on the same side (not shown). Likewise, MEMS devices can also be arranged on the side of the first surface 101a and/or the side of the second surface 101b of the board body 101, and be electrically connected to the wiring structure on the same side. Wherein, the passive device 105 may be, for example, a resistor, a capacitor, a filter, a resonator, an optical passive device, and the like.
图1b中示出无源器件105被布置在板体101的第一表面101a以上,本领域技术人员可以理解的是,该无源器件105也可以被布置在板体101的第一表面101a以下,也就是该无源器件105可以被植入到板体101的内部。同样地,如果无源器件105(和/或微机电系统器件)被布置在第二表面101b一侧的话,其也可以被布置在第二表面101b以上(位于板体101之外)或被植入到板体101的内部。Figure 1b shows that the passive device 105 is arranged above the first surface 101a of the board body 101, those skilled in the art can understand that the passive device 105 can also be arranged below the first surface 101a of the board body 101 , that is, the passive device 105 can be implanted inside the board body 101 . Similarly, if the passive device 105 (and/or MEMS device) is arranged on the second surface 101b side, it can also be arranged above the second surface 101b (outside the board body 101) or implanted into the interior of the plate body 101.
可以理解的是,图1b中仅以一个无源器件105为例,其数量于此并不具有限制本发明权利范围的意义,也可以在转接板100中布置多个无源器件105。It can be understood that only one passive device 105 is taken as an example in FIG. 1 b , and its number does not limit the scope of the present invention. Multiple passive devices 105 may also be arranged in the interposer board 100 .
在本发明提供的转接板100中,通过绝缘体102的填充,再在该绝缘体102上形成用于填充导电体103的通孔,可以将转接板100上的锥台形通孔101c修正为直径较小的圆柱形通孔102c。因此,导电体103填充的有效通孔为直径较小的圆柱形通孔102c,减小了导电体的直径。如果在原有的锥台形通孔101c中填充导电体103的话,那么通孔之间必须隔开一定的距离,以避免出现相邻的导电体误连接的情况。应用本发明提供的上述转接板,就可以在其制作锥形通孔的时候缩小相互之间的距离,最终可以在一定程度上减小导电体103之间的距离。因此,本发明提供的转接板中,减小了通孔孔径,即减小了导电体的直径,提高了转接板上器件的集成密度,进而提高了整个封装结构的集成密度。并且,锥台形通孔101c中填充的绝缘体102具有良好的电学性能和机械性能,因此,该绝缘体102作为应力释放的缓冲层,降低了玻璃转接板中导电体103与板体101由于热膨胀系数不匹配等引起的热应力问题,作为绝缘层,避免了硅转接板中产生的电学问题,因而增强了转接板100的机械和电学可靠性。In the adapter plate 100 provided by the present invention, by filling the insulator 102 and then forming a through hole for filling the conductor 103 on the insulator 102, the truncated cone-shaped through hole 101c on the adapter plate 100 can be modified to a diameter Smaller cylindrical through hole 102c. Therefore, the effective through hole filled by the conductor 103 is the cylindrical through hole 102c with a smaller diameter, which reduces the diameter of the conductor. If the conductors 103 are filled in the original frustum-shaped through-holes 101c, then the through-holes must be separated by a certain distance to avoid misconnection of adjacent conductors. By using the adapter plate provided by the present invention, the distance between them can be reduced when making tapered through holes, and finally the distance between conductors 103 can be reduced to a certain extent. Therefore, in the adapter board provided by the present invention, the aperture diameter of the through hole is reduced, that is, the diameter of the conductor is reduced, and the integration density of devices on the adapter board is increased, thereby increasing the integration density of the entire packaging structure. Moreover, the insulator 102 filled in the truncated cone-shaped through hole 101c has good electrical and mechanical properties. Therefore, the insulator 102 acts as a buffer layer for stress release, reducing the thermal expansion coefficient of the conductor 103 and the plate body 101 in the glass interposer. Thermal stress problems caused by mismatching, etc., act as an insulating layer to avoid electrical problems generated in the silicon interposer, thereby enhancing the mechanical and electrical reliability of the interposer 100 .
图2a-图2i是本发明的实施方式提供的转接板的制作方法的示意图。Fig. 2a-Fig. 2i are schematic diagrams of the manufacturing method of the adapter plate provided by the embodiment of the present invention.
首先,步骤一,如图2a所示,可以从转接板100的板体101的第一表面101a一侧对板体101进行打孔,以在该板体101内形成锥形盲孔101d。工艺上可以通过激光钻孔在板体101上钻取出锥形盲孔101d。其中,板体101例如可以由以下中的至少一者制成:玻璃、硅、碳化硅和陶瓷。Firstly, step 1, as shown in FIG. 2 a , can punch the board body 101 from the first surface 101 a side of the board body 101 of the adapter board 100 to form a tapered blind hole 101 d in the board body 101 . Technically, the tapered blind hole 101d can be drilled on the board body 101 by laser drilling. Wherein, the plate body 101 may be made of at least one of the following, for example: glass, silicon, silicon carbide and ceramics.
接下来,步骤二,如图2b所示,可以在该锥形盲孔101d中填充绝缘体102。该绝缘体102例如可以由高分子聚合物材料(例如,苯并环丁烯BCB、光敏聚酰亚胺PSPI等)制成。Next, step 2, as shown in FIG. 2 b , can fill the insulator 102 in the tapered blind hole 101 d. The insulator 102 can be made of, for example, a polymer material (eg, benzocyclobutene BCB, photosensitive polyimide PSPI, etc.).
接下来,步骤三,如图2c所示,可以从所述第一表面101a一侧对绝缘体102进行打孔,以在该绝缘体102内形成圆柱形盲孔102b。具体地,可以在填充绝缘体102(步骤二)之后进行第一表面101a的平坦化,并制作硬掩膜(未示出),通过硬掩膜来实现绝缘体102中的打孔。Next, Step 3, as shown in FIG. 2 c , may drill holes in the insulator 102 from the side of the first surface 101 a to form cylindrical blind holes 102 b in the insulator 102 . Specifically, after the insulator 102 is filled (step 2), the first surface 101a may be planarized, and a hard mask (not shown) may be fabricated, and holes in the insulator 102 may be drilled through the hard mask.
接下来,步骤四,如图2d所示,可以在圆柱形盲孔102b中填充导电体103。例如,可以将铜用电镀的方法填充到圆柱形盲孔102b中,形成铜质的导电体103。优选地,在填充导电体103之前,也可以先在圆柱形盲孔102b中先沉积扩散阻挡层和种子层,这样可以阻挡铜的扩散,并易于电镀出铜线路。Next, Step 4, as shown in FIG. 2d , the conductive body 103 may be filled in the cylindrical blind hole 102b. For example, copper can be filled into the cylindrical blind hole 102 b by electroplating to form a copper conductor 103 . Preferably, before filling the conductor 103, a diffusion barrier layer and a seed layer may be deposited in the cylindrical blind hole 102b, so as to block the diffusion of copper and facilitate the electroplating of copper lines.
接下来,步骤五,如图2e所示,可以在第一表面101a一侧对板体101进行布线,以形成第一布线结构104a,并且该第一布线结构104a和导电体103电连接。Next, in step five, as shown in FIG. 2e , the board body 101 may be wired on the side of the first surface 101a to form a first wiring structure 104a, and the first wiring structure 104a is electrically connected to the conductor 103 .
接下来,步骤六,如图2f所示,可以在第一表面101a一侧布置无源器件105和/或微机电系统器件,使得该无源器件105和/或微机电系统器件与第一布线结构104a电连接(未示出)。该步骤六为视电路所需而取的优选实施方式的可选的步骤,也可以不执行该步骤六,而直接进行以下步骤。Next, in step six, as shown in FIG. 2f, passive devices 105 and/or MEMS devices can be arranged on the side of the first surface 101a, so that the passive devices 105 and/or MEMS devices and the first wiring Structure 104a is electrically connected (not shown). The sixth step is an optional step in the preferred embodiment depending on the needs of the circuit, and it is also possible to directly perform the following steps without performing the sixth step.
接下来,步骤七,如图2g所示,可以在板体101的第一表面101a一侧临时键合(例如,可以通过在表面旋涂键合胶的方式)承载片106。该承载片106可以在接下来的减薄工艺中起到保护转接板100的第一布线结构104a的作用。该步骤七为优选实施方式的可选的步骤,也可以不执行该步骤七,而直接进行以下步骤。Next, in step seven, as shown in FIG. 2g , the carrier sheet 106 may be temporarily bonded (for example, by spin-coating bonding glue on the surface) on the side of the first surface 101a of the plate body 101 . The carrying sheet 106 can protect the first wiring structure 104 a of the interposer 100 in the subsequent thinning process. This step seven is an optional step in the preferred implementation manner, and this step seven can also be directly performed without performing the following steps.
接下来,步骤八,如图2h所示,可以从与第一表面101a相对的板体101的第二表面101b一侧对板体101进行减薄(例如,通过干法刻蚀、湿法腐蚀或者其他减薄方法),使得导电体103从板体101露出。此时,原来的锥形盲孔101d变为锥台形通孔101c,圆柱形盲孔102b变为圆柱形通孔102c。Next, in step eight, as shown in FIG. 2h, the plate body 101 can be thinned from the side of the second surface 101b of the plate body 101 opposite to the first surface 101a (for example, by dry etching, wet etching or other thinning methods), so that the conductor 103 is exposed from the plate body 101 . At this time, the original conical blind hole 101d becomes a truncated conical through hole 101c, and the cylindrical blind hole 102b becomes a cylindrical through hole 102c.
接下来,步骤九,如图2i所示,在第二表面101b一侧对板体101进行布线,以形成第二布线结构104b,并且该第二布线结构104b和导电体103电连接。Next, step nine, as shown in FIG. 2 i , wiring the board body 101 on the side of the second surface 101 b to form a second wiring structure 104 b, and the second wiring structure 104 b is electrically connected to the conductor 103 .
接下来,步骤十,在板体101的第二表面101b一侧布置无源器件105和/或微机电系统器件(未示出),使得该无源器件105和/或微机电系统器件与第二布线结构104b电连接。该步骤十为优选实施方式的可选的步骤,也可以不执行该步骤。Next, in step ten, a passive device 105 and/or a MEMS device (not shown) is arranged on the side of the second surface 101b of the board body 101, so that the passive device 105 and/or the MEMS device and the first The two wiring structures 104b are electrically connected. This step ten is an optional step in the preferred implementation manner, and this step may not be performed.
最后,在执行上述步骤七(键合承载片106)的基础上,步骤十一,可以从板体101移除该承载片106。图2i中移除承载片106后的转接板如图1b所示。Finally, on the basis of performing the above step seven (bonding the carrier sheet 106 ), in step eleven, the carrier sheet 106 can be removed from the board body 101 . In FIG. 2i, the adapter board after removing the carrier sheet 106 is shown in FIG. 1b.
本发明还提供一种包括上述转接板100的封装结构。The present invention also provides a packaging structure including the above-mentioned adapter board 100 .
综上所述,在本发明的转接板100中,通过绝缘体102的填充,再在该绝缘体102上形成用于填充导电体103的通孔,可以将转接板100上的锥台形通孔101c修正为直径较小的圆柱形通孔102c。因此,导电体103填充的有效通孔为直径较小的圆柱形通孔102c。本发明提供的转接板100中,减小了通孔孔径,提高了转接板上的器件的集成密度,进而提高了整个封装结构的集成密度。并且,锥台形通孔101c中填充的绝缘体102具有良好的电学性能和机械性能,因此,该绝缘体102作为应力释放的缓冲层,降低了玻璃转接板中导电体103与板体101由于热膨胀系数不匹配等引起的热应力问题,作为绝缘层,避免了硅转接板中产生的电学问题,因而增强了转接板100的机械和电学可靠性。To sum up, in the adapter plate 100 of the present invention, through filling the insulator 102, and then forming a through hole for filling the conductor 103 on the insulator 102, the frustum-shaped through hole on the adapter plate 100 can be 101c is modified to a cylindrical through hole 102c with a smaller diameter. Therefore, the effective through hole filled by the conductor 103 is the cylindrical through hole 102c with a smaller diameter. In the adapter board 100 provided by the present invention, the diameter of the through hole is reduced, the integration density of the devices on the adapter board is increased, and the integration density of the entire packaging structure is further improved. Moreover, the insulator 102 filled in the truncated cone-shaped through hole 101c has good electrical and mechanical properties. Therefore, the insulator 102 acts as a buffer layer for stress release, reducing the thermal expansion coefficient of the conductor 103 and the plate body 101 in the glass interposer. Thermal stress problems caused by mismatching, etc., act as an insulating layer to avoid electrical problems generated in the silicon interposer, thereby enhancing the mechanical and electrical reliability of the interposer 100 .
以上结合附图详细描述了本发明的优选实施方式,但是,本发明并不限于上述实施方式中的具体细节,在本发明的技术构思范围内,可以对本发明的技术方案进行多种简单变型,这些简单变型均属于本发明的保护范围。The preferred embodiment of the present invention has been described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the specific details of the above embodiment, within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, These simple modifications all belong to the protection scope of the present invention.
另外需要说明的是,在上述具体实施方式中所描述的各个具体技术特征,在不矛盾的情况下,可以通过任何合适的方式进行组合。为了避免不必要的重复,本发明对各种可能的组合方式不再另行说明。In addition, it should be noted that the various specific technical features described in the above specific implementation manners may be combined in any suitable manner if there is no contradiction. In order to avoid unnecessary repetition, various possible combinations are not further described in the present invention.
此外,本发明的各种不同的实施方式之间也可以进行任意组合,只要其不违背本发明的思想,其同样应当视为本发明所公开的内容。In addition, various combinations of different embodiments of the present invention can also be combined arbitrarily, as long as they do not violate the idea of the present invention, they should also be regarded as the disclosed content of the present invention.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112290338A (en) * | 2019-07-24 | 2021-01-29 | 庆鼎精密电子(淮安)有限公司 | Manufacturing method of adapter plate |
CN113035834A (en) * | 2021-05-28 | 2021-06-25 | 浙江集迈科微电子有限公司 | Adapter plate and preparation method thereof |
CN114334948A (en) * | 2021-12-15 | 2022-04-12 | 中国电子科技集团公司第三十八研究所 | Digital transmitting-receiving integrated microsystem and manufacturing method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002176256A (en) * | 2000-12-06 | 2002-06-21 | Ibiden Co Ltd | Printed wiring board and its manufacturing method |
CN1901782A (en) * | 2005-07-18 | 2007-01-24 | 台达电子工业股份有限公司 | Circuit substrate with through-hole circuit and manufacturing method thereof |
CN102569251A (en) * | 2012-02-22 | 2012-07-11 | 江苏物联网研究发展中心 | Intermetallic compound filled vertical through-hole interconnecting structure for three-dimensional package and preparation method thereof |
CN102956540A (en) * | 2011-08-18 | 2013-03-06 | 中国科学院微电子研究所 | Method for manufacturing interconnection structure containing polymer material and metal through hole |
-
2014
- 2014-11-19 CN CN201410664902.5A patent/CN104409363B/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002176256A (en) * | 2000-12-06 | 2002-06-21 | Ibiden Co Ltd | Printed wiring board and its manufacturing method |
CN1901782A (en) * | 2005-07-18 | 2007-01-24 | 台达电子工业股份有限公司 | Circuit substrate with through-hole circuit and manufacturing method thereof |
CN102956540A (en) * | 2011-08-18 | 2013-03-06 | 中国科学院微电子研究所 | Method for manufacturing interconnection structure containing polymer material and metal through hole |
CN102569251A (en) * | 2012-02-22 | 2012-07-11 | 江苏物联网研究发展中心 | Intermetallic compound filled vertical through-hole interconnecting structure for three-dimensional package and preparation method thereof |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112290338A (en) * | 2019-07-24 | 2021-01-29 | 庆鼎精密电子(淮安)有限公司 | Manufacturing method of adapter plate |
CN113035834A (en) * | 2021-05-28 | 2021-06-25 | 浙江集迈科微电子有限公司 | Adapter plate and preparation method thereof |
CN113035834B (en) * | 2021-05-28 | 2021-07-30 | 浙江集迈科微电子有限公司 | Adapter plate and preparation method thereof |
CN114334948A (en) * | 2021-12-15 | 2022-04-12 | 中国电子科技集团公司第三十八研究所 | Digital transmitting-receiving integrated microsystem and manufacturing method |
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