CN104409363A - Interposer, manufacturing method thereof and packaging structure - Google Patents
Interposer, manufacturing method thereof and packaging structure Download PDFInfo
- Publication number
- CN104409363A CN104409363A CN201410664902.5A CN201410664902A CN104409363A CN 104409363 A CN104409363 A CN 104409363A CN 201410664902 A CN201410664902 A CN 201410664902A CN 104409363 A CN104409363 A CN 104409363A
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- China
- Prior art keywords
- plate body
- keyset
- surface side
- insulator
- wire structures
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- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 238000004806 packaging method and process Methods 0.000 title abstract 3
- 239000012212 insulator Substances 0.000 claims abstract description 41
- 239000004020 conductor Substances 0.000 claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 12
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 18
- 229920002521 macromolecule Polymers 0.000 claims description 6
- 239000002861 polymer material Substances 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 230000010354 integration Effects 0.000 abstract description 9
- 230000005611 electricity Effects 0.000 abstract description 5
- 230000008646 thermal stress Effects 0.000 abstract description 4
- 230000000149 penetrating effect Effects 0.000 abstract 2
- 230000000630 rising effect Effects 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 241001515806 Stictis Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
Abstract
The invention discloses an interposer, a manufacturing method thereof and a packaging structure. The interposer comprises a plate body, insulators, conductors, a first wiring structure and a second wiring structure, wherein the plate body is provided with a first surface and a second surface which are opposite, and frustum-shaped through holes penetrating the plate body are formed between the first surface and the second surface; the insulators are filled inside the frustum-shaped through holes, and cylindrical through holes penetrating the plate body are formed on the insulators; the conductors are filled in the cylindrical through holes; the first wiring structure and the second wiring structure are respectively arranged on the first surface and the second surface and are electrically connected with the conductors. According to the interposer, integration density of devices on the interposer is improved, further the integration density of the packaging structure is improved, thermal stress problems caused by CTE (coefficient of thermal expansion) mismatch of the conductors and the plate body in the glass interposer, electricity problem rising in the silicon interposer can be avoided, and therefore mechanical and electrical reliability of the interposer can be enhanced.
Description
Technical field
The present invention relates to encapsulation field, particularly, relate to a kind of keyset and preparation method thereof, encapsulating structure.
Background technology
Three dimension system encapsulation utilizes the mutually stacking of chip, thus achieves different chip efficient interconnections in the vertical direction.Keyset (interposer) serves the effect of forming a connecting link in three dimension system is integrated, makes signal output port realize reallocation.The making of keyset mainly through punching on its plate body, and filled conductive body, thus obtain the vertical transfer passage of signal.The bellmouth that the plate body of keyset drills through is greater than most advanced and sophisticated aperture due to the aperture of its planar ends, and this structure makes the electric conductor of filling occupy larger area in the planar ends side of bellmouth, thus limits the integrated number of device on keyset.Further, existing keyset is made primarily of glass and silicon, and the fracture strength of glass through hole is lower, easily causes the thermal and mechanical stress problems such as cracked, crackle.In silicon through hole, transmission channel can produce the electricity questions such as parasitic capacitance, inductance and leakage current.
Summary of the invention
The object of this invention is to provide keyset that a kind of device integration density is comparatively large, mechanical and electrical reliability is stronger and preparation method thereof, encapsulating structure.
To achieve these goals, the invention provides a kind of keyset, this keyset comprises: plate body, has relative first surface and second surface, and between described first surface and described second surface, be formed with the taper type through hole running through this plate body; Insulator, is filled in described taper type through hole, is formed with the cylindrical hole running through described plate body in described insulator; Electric conductor, is filled in described cylindrical hole; And first wire structures and the second wire structures, on the described first surface being arranged in described plate body and described second surface, and be electrically connected with described electric conductor.
Preferably, described plate body is made up of at least one in following: glass, silicon, carborundum and pottery.
Preferably, described insulator is made up of macromolecule polymer material.
Preferably, this keyset also comprises: passive device, is arranged in the described first surface side of described plate body and/or described second surface side, and is electrically connected with the wire structures of homonymy; And/or mems device, be arranged in the described first surface side of described plate body and/or described second surface side, and be electrically connected with the wire structures of homonymy.
The present invention also provides a kind of manufacture method of keyset, and the method comprises: punch from the first surface side of the plate body of keyset to described plate body, to form tapered blind hole in described plate body; Insulator is filled in described tapered blind hole; From described first surface side, described insulator is punched, to form blind cylindrical hole in described insulator; Filled conductive body in described blind cylindrical hole; In described first surface side, described plate body is connected up, to form the first wire structures be electrically connected with described electric conductor; Carry out thinning from the second surface side of the described plate body relative with described first surface to described plate body, described electric conductor is exposed from described plate body; And in described second surface side, described plate body is connected up, to form the second wire structures be electrically connected with described electric conductor.
Preferably, described plate body is made up of at least one in following: glass, silicon, carborundum and pottery.
Preferably, described insulator is made up of macromolecule polymer material.
Preferably, the method also comprises: after connecting up to described plate body in described first surface side, passive device and/or mems device is arranged in described first surface side, this passive device and/or mems device are electrically connected with described first wire structures, afterwards, then carry out thinning from the second surface side of the described plate body relative with described first surface to described plate body.
Preferably, the method also comprises: after connecting up to described plate body in described second surface side, arrange passive device and/or mems device in described second surface side, this passive device and/or mems device are electrically connected with described second wire structures.
The present invention also provides a kind of encapsulating structure comprising keyset provided by the invention.
By technique scheme, in the tapered blind hole of keyset, fill insulator, then beat blind cylindrical hole in the insulator and carry out filled conductive body, make final electric conductor of filling be revise less cylindrical of back aperture.Therefore, in keyset provided by the invention, reduce the diameter of electric conductor, improve the integration density of device on keyset, and then improve the integration density of whole encapsulating structure.And, the insulator of filling in through hole has good electric property and mechanical performance, therefore, this insulator can as the resilient coating of Stress Release, reduce the thermal stress issues that electric conductor and plate body in glass keyset cause because thermal coefficient of expansion does not mate etc., and this insulator is as insulating barrier, avoid the electricity question produced in silicon keyset, thus enhance machinery and the electrical reliability of keyset.
Other features and advantages of the present invention are described in detail in embodiment part subsequently.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, is used from explanation the present invention, but is not construed as limiting the invention with embodiment one below.In the accompanying drawings:
Fig. 1 a and Fig. 1 b is the schematic diagram of the keyset that two kinds of execution modes of the present invention provide; And
Fig. 2 a-Fig. 2 i is the schematic diagram of the manufacture method of the keyset that embodiments of the present invention provide.
Description of reference numerals
100 keyset 101 plate body 101a first surfaces
101b second surface 101c taper type through hole 101d tapered blind hole
102 insulator 102c cylindrical hole 102b blind cylindrical hole
103 electric conductor 104a first wire structures 104b second wire structures
105 passive device 106 carrying tablets
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Should be understood that, embodiment described herein, only for instruction and explanation of the present invention, is not limited to the present invention.
Fig. 1 a and Fig. 1 b is the schematic diagram of the keyset that two kinds of execution modes of the present invention provide.In execution mode as shown in Figure 1a, keyset 100 can comprise plate body 101, insulator 102, electric conductor 103 and the first wire structures 104a and the second wire structures 104b.Wherein, plate body 101 has relative first surface 101a and second surface 101b, and can be formed with the taper type through hole 101c running through this plate body 101 between first surface 101a and second surface 101b.Insulator 102 can be filled in taper type through hole 101c, can be formed with the cylindrical hole 102c running through plate body 101 in this insulator 102.Electric conductor 103 can be filled in cylindrical hole 102c.On the first surface 101a that first wire structures 104a and the second wire structures 104b can be arranged in plate body 101 and second surface 101b, and be electrically connected with described electric conductor 103.
Wherein, plate body 101 can be made up of at least one in following: glass, silicon, carborundum and pottery.Insulator 102 can be made up of macromolecule polymer material (such as, benzocyclobutene BCB, light-sensitive polyimide PSPI etc.).
It should be noted that, be described for two taper type through hole 101c and two electric conductors 103 in this Figure of description.But should be understood that, the number of through hole and electric conductor just plays exemplary effect herein, and not as limitation of the scope of the invention.
It should be understood that, in accompanying drawing, the shape of taper type through hole 101c and cylindrical hole 102c only schematically illustrates the taper type and cylindrical of rule, and taper type of the present invention (and the taper that will describe below) and cylindrical taper type (taper) and the cylindrical structural being not limited to stricti jurise.As long as approximate taper type (taper) and columniform structure are all included within protection scope of the present invention.
Preferably, in another execution mode as shown in Figure 1 b, consider the needs of circuit function, this keyset 100 can also comprise passive device 105 and/or mems device (not shown).This passive device 105 can be arranged in first surface 101a side and/or the second surface 101b side of plate body 101, and is electrically connected (not shown) with the wire structures of homonymy.Similarly, mems device also can be arranged in the described first surface 101a side of plate body 101 and/or described second surface 101b side, and is electrically connected with the wire structures of homonymy.Wherein, passive device 105 can be such as resistance, electric capacity, filter, resonator and optical passive component etc.
Shown in Fig. 1 b, passive device 105 is disposed in more than the first surface 101a of plate body 101, it will be understood by those skilled in the art that, this passive device 105 also can be disposed in below the first surface 101a of plate body 101, and namely this passive device 105 can be implanted to the inside of plate body 101.Similarly, if passive device 105 (and/or mems device) is disposed in second surface 101b side, its inside that also can be disposed in more than second surface 101b (being positioned at outside plate body 101) or be implanted to plate body 101.
Be understandable that, only for a passive device 105 in Fig. 1 b, its quantity does not have in this meaning limiting interest field of the present invention, can arrange multiple passive device 105 in keyset 100 yet.
In keyset 100 provided by the invention, by the filling of insulator 102, then on this insulator 102, form the through hole being used for filled conductive body 103, the taper type through hole 101c on keyset 100 can be modified to the less cylindrical hole 102c of diameter.Therefore, effective through hole that electric conductor 103 is filled is the cylindrical hole 102c that diameter is less, reduces the diameter of electric conductor.If filled conductive body 103 in original taper type through hole 101c, so must separate certain distance between through hole, to avoid the situation occurring that adjacent electric conductor connects by mistake.Apply above-mentioned keyset provided by the invention, just can reduce distance each other when it makes conical through-hole, finally can reduce the distance between electric conductor 103 to a certain extent.Therefore, in keyset provided by the invention, reduce through-hole aperture, namely reduce the diameter of electric conductor, improve the integration density of device on keyset, and then improve the integration density of whole encapsulating structure.And, the insulator 102 of filling in taper type through hole 101c has good electric property and mechanical performance, therefore, this insulator 102 is as the resilient coating of Stress Release, reduce the thermal stress issues that electric conductor 103 and plate body 101 in glass keyset cause because thermal coefficient of expansion does not mate etc., as insulating barrier, avoid the electricity question produced in silicon keyset, thus enhance machinery and the electrical reliability of keyset 100.
Fig. 2 a-Fig. 2 i is the schematic diagram of the manufacture method of the keyset that embodiments of the present invention provide.
First, step one, as shown in Figure 2 a, can punch from the first surface 101a side of the plate body 101 of keyset 100 to plate body 101, to form tapered blind hole 101d in this plate body 101.Technique can drill through out tapered blind hole 101d by laser drill on plate body 101.Wherein, plate body 101 such as can be made up of at least one in following: glass, silicon, carborundum and pottery.
Next, step 2, as shown in Figure 2 b, can fill insulator 102 in this tapered blind hole 101d.This insulator 102 such as can be made up of macromolecule polymer material (such as, benzocyclobutene BCB, light-sensitive polyimide PSPI etc.).
Next, step 3, as shown in Figure 2 c, can punch from described first surface 101a side to insulator 102, to form blind cylindrical hole 102b in this insulator 102.Particularly, can carry out the planarization of first surface 101a after filling insulator 102 (step 2), and make hard mask (not shown), logical hard mask realizes the punching in insulator 102.
Next, step 4, as shown in Figure 2 d, can in blind cylindrical hole 102b filled conductive body 103.Such as, can copper electric plating method be filled in blind cylindrical hole 102b, form copper electric conductor 103.Preferably, before filled conductive body 103, also can first first deposit diffusion barriers and Seed Layer in blind cylindrical hole 102b, the diffusion of copper can be stopped like this, and be easy to electroplate out copper wire.
Next, step 5, as shown in Figure 2 e, can connect up in first surface 101a side to plate body 101, to form the first wire structures 104a, and this first wire structures 104a and electric conductor 103 are electrically connected.
Next, step 6, as shown in figure 2f, passive device 105 and/or mems device can be arranged in first surface 101a side, make this passive device 105 and/or mems device be electrically connected (not shown) with the first wire structures 104a.This step 6 is the optional step depending on the required preferred implementation of getting of circuit, also can not perform this step 6, and directly carry out following steps.
Next, step 7, as shown in Figure 2 g, can at the interim bonding in first surface 101a side of plate body 101 (mode at surperficial spin coating bonding glue such as, can be passed through) carrying tablet 106.This carrying tablet 106 can play the effect of the first wire structures 104a of protection keyset 100 in ensuing reduction process.This step 7 is the optional step of preferred implementation, also can not perform this step 7, and directly carry out following steps.
Next, step 8, as shown in fig. 2h, can from the second surface 101b side of the plate body 101 relative with first surface 101a to plate body 101 carry out thinning (such as, by dry etching, wet etching or other thining methods), electric conductor 103 is exposed from plate body 101.Now, tapered blind hole 101d originally becomes taper type through hole 101c, and blind cylindrical hole 102b becomes cylindrical hole 102c.
Next, step 9, as shown in fig. 2i, connects up to plate body 101 in second surface 101b side, and to form the second wire structures 104b, and this second wire structures 104b and electric conductor 103 are electrically connected.
Next, step 10, arranges passive device 105 and/or mems device (not shown) in the second surface 101b side of plate body 101, this passive device 105 and/or mems device is electrically connected with the second wire structures 104b.This step 10 is the optional step of preferred implementation, also can not perform this step.
Finally, on the basis performing above-mentioned steps seven (bonding carrying tablet 106), step 11, can remove this carrying tablet 106 from plate body 101.The keyset after carrying tablet 106 is removed as shown in Figure 1 b in Fig. 2 i.
The present invention also provides a kind of encapsulating structure comprising above-mentioned keyset 100.
In sum, in keyset 100 of the present invention, by the filling of insulator 102, then on this insulator 102, form the through hole being used for filled conductive body 103, the taper type through hole 101c on keyset 100 can be modified to the less cylindrical hole 102c of diameter.Therefore, effective through hole that electric conductor 103 is filled is the cylindrical hole 102c that diameter is less.In keyset 100 provided by the invention, reduce through-hole aperture, improve the integration density of the device on keyset, and then improve the integration density of whole encapsulating structure.And, the insulator 102 of filling in taper type through hole 101c has good electric property and mechanical performance, therefore, this insulator 102 is as the resilient coating of Stress Release, reduce the thermal stress issues that electric conductor 103 and plate body 101 in glass keyset cause because thermal coefficient of expansion does not mate etc., as insulating barrier, avoid the electricity question produced in silicon keyset, thus enhance machinery and the electrical reliability of keyset 100.
Below the preferred embodiment of the present invention is described in detail by reference to the accompanying drawings; but; the present invention is not limited to the detail in above-mentioned execution mode; within the scope of technical conceive of the present invention; can carry out multiple simple variant to technical scheme of the present invention, these simple variant all belong to protection scope of the present invention.
It should be noted that in addition, each the concrete technical characteristic described in above-mentioned embodiment, in reconcilable situation, can be combined by any suitable mode.In order to avoid unnecessary repetition, the present invention illustrates no longer separately to various possible compound mode.
In addition, also can carry out combination in any between various different execution mode of the present invention, as long as it is without prejudice to thought of the present invention, it should be considered as content disclosed in this invention equally.
Claims (10)
1. a keyset, is characterized in that, this keyset comprises:
Plate body, has relative first surface and second surface, and between described first surface and described second surface, be formed with the taper type through hole running through this plate body;
Insulator, is filled in described taper type through hole, is formed with the cylindrical hole running through described plate body in described insulator;
Electric conductor, is filled in described cylindrical hole; And
First wire structures and the second wire structures, on the described first surface being arranged in described plate body and described second surface, and be electrically connected with described electric conductor.
2. keyset according to claim 1, is characterized in that, described plate body is made up of at least one in following: glass, silicon, carborundum and pottery.
3. keyset according to claim 1, is characterized in that, described insulator is made up of macromolecule polymer material.
4. keyset according to claim 1, is characterized in that, this keyset also comprises:
Passive device, is arranged in the described first surface side of described plate body and/or described second surface side, and is electrically connected with the wire structures of homonymy; And/or
Mems device, is arranged in the described first surface side of described plate body and/or described second surface side, and is electrically connected with the wire structures of homonymy.
5. a manufacture method for keyset, is characterized in that, the method comprises:
From the first surface side of the plate body of keyset, described plate body is punched, to form tapered blind hole in described plate body;
Insulator is filled in described tapered blind hole;
From described first surface side, described insulator is punched, to form blind cylindrical hole in described insulator;
Filled conductive body in described blind cylindrical hole;
In described first surface side, described plate body is connected up, to form the first wire structures be electrically connected with described electric conductor;
Carry out thinning from the second surface side of the described plate body relative with described first surface to described plate body, described electric conductor is exposed from described plate body; And
In described second surface side, described plate body is connected up, to form the second wire structures be electrically connected with described electric conductor.
6. method according to claim 5, is characterized in that, described plate body is made up of at least one in following: glass, silicon, carborundum and pottery.
7. method according to claim 5, is characterized in that, described insulator is made up of macromolecule polymer material.
8. method according to claim 5, is characterized in that, the method also comprises:
After connecting up to described plate body in described first surface side, passive device and/or mems device is arranged in described first surface side, this passive device and/or mems device are electrically connected with described first wire structures, afterwards, then carry out thinning from the second surface side of the described plate body relative with described first surface to described plate body.
9. method according to claim 5, is characterized in that, the method also comprises:
After connecting up to described plate body in described second surface side, arrange passive device and/or mems device in described second surface side, this passive device and/or mems device are electrically connected with described second wire structures.
10. one kind comprises the encapsulating structure of the keyset in claim 1-4 described in arbitrary claim.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410664902.5A CN104409363B (en) | 2014-11-19 | 2014-11-19 | Pinboard and preparation method thereof, encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410664902.5A CN104409363B (en) | 2014-11-19 | 2014-11-19 | Pinboard and preparation method thereof, encapsulating structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104409363A true CN104409363A (en) | 2015-03-11 |
| CN104409363B CN104409363B (en) | 2017-12-01 |
Family
ID=52646979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410664902.5A Active CN104409363B (en) | 2014-11-19 | 2014-11-19 | Pinboard and preparation method thereof, encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104409363B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112290338A (en) * | 2019-07-24 | 2021-01-29 | 庆鼎精密电子（淮安）有限公司 | Manufacturing method of adapter plate |
| CN113035834A (en) * | 2021-05-28 | 2021-06-25 | 浙江集迈科微电子有限公司 | Adapter plate and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002176256A (en) * | 2000-12-06 | 2002-06-21 | Ibiden Co Ltd | Printed wiring board and its manufacturing method |
| CN1901782A (en) * | 2005-07-18 | 2007-01-24 | 台达电子工业股份有限公司 | Circuit base board with through hole circuit and its producing method |
| CN102569251A (en) * | 2012-02-22 | 2012-07-11 | 江苏物联网研究发展中心 | Intermetallic compound filled vertical through-hole interconnecting structure for three-dimensional package and preparation method thereof |
| CN102956540A (en) * | 2011-08-18 | 2013-03-06 | 中国科学院微电子研究所 | Method for manufacturing interconnection structure containing polymer material and metal through hole |
-
2014
- 2014-11-19 CN CN201410664902.5A patent/CN104409363B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002176256A (en) * | 2000-12-06 | 2002-06-21 | Ibiden Co Ltd | Printed wiring board and its manufacturing method |
| CN1901782A (en) * | 2005-07-18 | 2007-01-24 | 台达电子工业股份有限公司 | Circuit base board with through hole circuit and its producing method |
| CN102956540A (en) * | 2011-08-18 | 2013-03-06 | 中国科学院微电子研究所 | Method for manufacturing interconnection structure containing polymer material and metal through hole |
| CN102569251A (en) * | 2012-02-22 | 2012-07-11 | 江苏物联网研究发展中心 | Intermetallic compound filled vertical through-hole interconnecting structure for three-dimensional package and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112290338A (en) * | 2019-07-24 | 2021-01-29 | 庆鼎精密电子（淮安）有限公司 | Manufacturing method of adapter plate |
| CN113035834A (en) * | 2021-05-28 | 2021-06-25 | 浙江集迈科微电子有限公司 | Adapter plate and preparation method thereof |
| CN113035834B (en) * | 2021-05-28 | 2021-07-30 | 浙江集迈科微电子有限公司 | Adapter plate and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104409363B (en) | 2017-12-01 |
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