CN104377269A - 一种高增益微元雪崩光电二极管阵列制造方法 - Google Patents
一种高增益微元雪崩光电二极管阵列制造方法 Download PDFInfo
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
本发明公开了一种高增益微元雪崩光电二极管(APD)阵列制造方法。二极管的雪崩区纵向结构被设计成纳米级尺寸，场控区纵向结构被设计成微米级尺寸，这样可以在较小区域内集成数十到数百个微元APD构成一个像素单元，多个像素单元集成得到阵列结构。这样的结构能够大大降低器件工作电压，提高器件增益和信噪比。
Description
技术领域
本发明涉及光电子器件制造领域，特别涉及一种光电二极管阵列制造方法。
背景技术
目前，光电探测器件包括基于真空管技术的真空光电倍增管、基于半导体技术的PIN光电二极管和雪崩光电二极管(APD)。真空光电倍增管具有高灵敏度、低噪声、响应速度快的优点，在辐射能量探测中被广泛应用。但真空光电倍增管体积大，工作电压高，功耗大，其恒温保持和应用配电较为复杂，无法实现结构的微型化和全固态化，这大大限制了真空光电倍增管的应用范围。PIN光电二极管在P型层和N型层中有一层接近本征区域(i型层)，通常有较厚的本征区，而P型层和N型层较薄，这样其耗尽区几乎扩展到整个PN结，从而使得光子在二极管中被充分吸收。PIN光电二极管具有制造工艺简单，成本低廉的优点，在光纤通信中被大量使用。但载流子在PIN光电二极管器件内部不存在倍增过程，对单个光子而言仅能产生一对电子空穴对，无法应对微弱光信号探测的要求。而APD光电二极管凭借雪崩倍增效应将接收到的光信号在其内部进行放大，在很大程度上避免了一般光电探测器件中外部放大电路引起的噪声问题，而且还具有高量子效率、高增益的优点，能够达到单光子探测这一光电探测极限。与光电倍增管相比，雪崩光电二极管具有全固态、小体积的优势，易于集成，并且和CMOS工艺兼容。
高增益的雪崩光电二极管工作在Geiger模式，器件的反向偏压大于其雪崩击穿电压，当器件内部产生的光生载流子进入耗尽层后，将在外电场作用下进行输运，同时从外电场中获得能量，在输运过程中载流子与硅晶格原子发生碰撞，当载流子能量足够高时就能够使硅晶格原子发生电离，将电子由价带激发至导带，产生一对二次电子-空穴对。这些二次电子-空穴对和原有载流子一起继续进行输运并发生碰撞电离，产生新的二次电子-空穴对。当器件外加偏压不断增加到一定值时，器件耗尽层内存在极高的电场强度，在较短距离和时间内载流子就能获得足够能量来发生碰撞电离，就像链式反应一样，载流子数目剧增，形成由nA量级迅速增长到mA量级的雪崩电流，对光信号实现有效放大。
发明内容
本发明提供了一种高增益微元雪崩光电二极管阵列的制造方法，提高了器件的增益、降低了器件的工作电压。
本发明提供了一种高增益微元APD阵列制造方法，包括：
高增益微元APD阵列的像素单元由微元APD集成得到，如图1所示。像素单元由多个微元APD并联组成，如图2所示。其中，微元APD纵向结构依次是N型重掺杂阴极区，由π型耗尽层形成的雪崩区，P型重掺杂层组成的场控区，π型掺杂层形成的吸收区，吸收区上设有阳极金属电极。雪崩区纵向尺寸为纳米级尺寸，场控区尺寸为微米级尺寸；
进一步的，本发明所述高增益微元APD阵列制造在硅衬底上；
进一步的，本发明将吸收区和雪崩区分离，能够获得良好的电子注入，降低器件倍增噪声；
本发明中吸收区、场控区和雪崩区采用离子注入方式形成。
附图说明
图1为1×4高增益微元APD阵列示意图；图2为像素单元示意图；图3为微元APD剖面图。
Claims (4)
1.一种高增益微元雪崩光电二极管阵列制造方法，其特征在于，包括：
提供一种硅片做为衬底片；
在所述衬底片上制造出微元APD，多个微元APD构成一个像素单元；
多个像素单元组成高增益微元APD阵列。
2. 根据要求1所述的高增益微元雪崩光电二极管阵列制造方法，其特征在于，所述硅片为P型硅片，像素单元由微元APD并联组成。
3.根据要求1所述的高增益微元雪崩光电二极管阵列制造方法，其特征在于，微元APD结构包括依次纵向层叠的N型重掺杂阴极区，由π型耗尽层形成的雪崩区，P型重掺杂层组成的场控区，π型掺杂层形成的吸收区，吸收区上设计有阳极金属电极。
4.雪崩区纵向尺寸为80-120nm，场控区尺寸为5-10μm。
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090008566A1 (en) * | 2006-02-01 | 2009-01-08 | Koninklijke Philips Electronics N. V. | Geiger mode avalanche photodiode |
| CN101752391A (zh) * | 2008-11-28 | 2010-06-23 | 北京师范大学 | 具有mos全耗尽漂移通道的雪崩漂移探测器及其探测方法 |
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- 2013-08-13 CN CN201310349805.2A patent/CN104377269A/zh active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090008566A1 (en) * | 2006-02-01 | 2009-01-08 | Koninklijke Philips Electronics N. V. | Geiger mode avalanche photodiode |
| CN101752391A (zh) * | 2008-11-28 | 2010-06-23 | 北京师范大学 | 具有mos全耗尽漂移通道的雪崩漂移探测器及其探测方法 |
Non-Patent Citations (2)
| Title |
|---|
| Z.SADYGOV: "Spatial distribution of photo-sensitivity in new micro-pixel avalanche photodiodes:Assembly of 64-element arrays", 《NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH A》, vol. 610, 27 May 2009 (2009-05-27) * |
| 顾怀奇: "Si基微元APD雪崩增益与结构参数优化的研究", 《道客巴巴》, 10 March 2013 (2013-03-10) * |
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