CN104362141A - High-power crimp-connection type IGBT module - Google Patents
High-power crimp-connection type IGBT module Download PDFInfo
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- CN104362141A CN104362141A CN201410693404.3A CN201410693404A CN104362141A CN 104362141 A CN104362141 A CN 104362141A CN 201410693404 A CN201410693404 A CN 201410693404A CN 104362141 A CN104362141 A CN 104362141A
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Abstract
The invention relates to a high-power crimp-connection type IGBT module which comprises a hermetic package shell formed by subunit shells (1) and subunit shell cover components (2). At least one semiconductor chip (1-1), first auxiliary pieces (1-6), at least one second auxiliary piece (1-2) and at least one third auxiliary piece (1-3) form interlayer structures, and the interlayer structures are arranged in the hermetic package shell between the subunit shells (1) and the subunit shell cover components (2). One or more subunits are distributed in a module outer shell (3) in parallel to form the high-power crimp-connection type IGBT module. The high-power pressure crimping-connection type IGBT module has the advantages of being low in thermal resistance, high in reliability, and suitable for being used in series connection.
Description
Technical field
The present invention relates to a kind of large power semiconductor device, be specifically related to a kind of high-power crimp type IGBT module.
Background technology
Igbt (Insulate-Gate Bipolar Transistor-IGBT) combines the advantage of power transistor (GiantTransistor-GTR) and field of electric force effect transistor (Power MOSFET), have good characteristic, application is very extensive; IGBT is also three terminal device: grid, collector and emitter.IGBT (Insulated Gate BipolarTransistor) is MOS structure bipolar device, belongs to the power device of high speed performance and the bipolar low resistance performance with power MOSFET.
The restriction of the limit of voltage is born due to silicon materials, the ceiling voltage of existing IGBT device is 6500V, and in device up to the application of dozens or even hundreds of kV voltage, the application of IGBT uses mainly with cascade, each valve section needs nearly tens IGBT device series connection, for ensureing to install, the fail safe in transportation, usually need to apply the fastening force up to 100kN, common module and traditional compression joint type devices difficult meet such fastening force requirement.
The encapsulation of high-power IGBT has two kinds of forms usually, one is the encapsulation of base plate insulation module formula, by base plate, cover copper ceramic substrate, the compositions such as insulation crust, chip back is welded with ceramic copper-clad face by solder, and front is connected to ceramic copper-clad face by bonding line, and ceramic copper-clad face forms the zones of different connecting positive and negative electrode by etching.Encapsulate as non-airtight, inside modules comes isolating chip and external environment (water by insulating material such as perfusion Silica hydrogel or epoxy resin etc., gas, dust) contact, but pouring material has usually also completely cut off the transmission of heat and in long-term work process, has occurred the phenomenon that isolation effect is degenerated.
Another is class thyristor, and flat crimping type encapsulates, and be made up of ceramic cartridge and copper electrode, chip is contacted by pressure with electrode.Total head connects IGBT encapsulation and coordinates multilayer material to realize full compression joint type with silicon chip and contact by upper/lower electrode, eliminates the component failure because solder joint fatigue causes.
In traditional compression joint type power device design, because meet the weldless connection demand of chip, chip is often direct to be contacted and Electrode connection by pressure, and considers mating of thermal coefficient of expansion (CTE) and silicon chip, selects molybdenum to be arranged between chip and electrode as auxiliary member.The fastening force of device is subject to the restriction that chip bears pressure limit, can not be excessive, otherwise can defective chip.
Summary of the invention
For the deficiencies in the prior art; the object of this invention is to provide a kind of high-power crimp type IGBT module; semiconductor chip wherein obtains the protection that air-tightness adds inert gas in subelement housing; avoid chip to be subject to the external condition such as steam, dust and to stain the inefficacy caused, add the impact of the electric arc between the upper and lower auxiliary member of chip simultaneously.
The object of the invention is to adopt following technical proposals to realize:
The invention provides a kind of high-power crimp type IGBT module, described module is vertical stack formula encapsulating structure, and its improvements are: described module comprises subelement housing 1, subelement cap assembly 2 and module housing 3; Form subelement by subelement housing 1 and subelement cap assembly 2 by cold welding encapsulation, in module housing 3, be provided with the subelement that quantity is no less than 1 vertically; Subelement is flexibly connected with module housing 3 in the vertical direction; Fill inert gas in described subelement housing 1, as nitrogen, and realize air-tight packaging by the pressure welding between subelement cap assembly 2.
Further, described subelement has relative displacement with module housing 3 in the vertical direction, and its distance is 2-3mm.
Further, described subelement housing 1 comprises semiconductor chip 1-1, the second auxiliary member 1-2, the 3rd auxiliary member 1-3, electrode boss 1-4, subelement shell 1-5 and the first auxiliary member 1-6;
Described first auxiliary member 1-6, semiconductor chip 1-1, the second auxiliary member 1-2 and the 3rd auxiliary member 1-3 overlay in framework 1-8 from top to bottom successively, and described framework 1-8 is installed on electrode boss 1-4 by pressure contact; Described electrode boss 1-4 is connected by shell flange 1-7 with subelement shell 1-5.
Further, described first auxiliary member 1-6 and the 3rd auxiliary member 1-3 adopts the metal material with silicon materials similar thermal expansion coefficient; The shape of described first auxiliary member 1-6 and the 3rd auxiliary member 1-3 is square sheet, and thickness is 1-2mm;
Described second auxiliary member 1-2 adopts the sheet metal with high ductibility and high conductivity;
Described subelement shell 1-5 adopts insulating material.
Further, describedly tungsten, molybdenum or alloy is comprised with the metal material of silicon materials similar thermal expansion coefficient; The described sheet metal with high ductibility and high conductivity comprises aluminium or silver; Described insulating material comprises pottery or epoxy resin composite material.
Further, described subelement cap assembly 2 comprises subelement lid boss 2-1, heat-pipe radiator 2-2, spring assembly 2-3, overhead electrode 2-4, positioning framework 2-5 and lid flange 2-6;
Described subelement boss 2-1, spring assembly 2-3 and overhead electrode 2-4 are assembled into one by positioning framework 2-5, between described subelement boss 2-1 and spring assembly 2-3, arrange heat-pipe radiator 2-2;
Described lid flange 2-6 is welded on subelement boss 2-1, and described lid flange 2-6 forms air-tightness subelement by cold welding and shell flange 1-7.
Further, described spring assembly 2-3 one end and overhead electrode 2-4 rivet, and one end crimps with subelement lid boss 2-1, and are located by positioning framework 2-5 and subelement boss 2-1;
Described heat-pipe radiator 2-2 evaporation ends and subelement lid boss 2-1 are welded by the location notch on boss and locate.
Further, described module housing 3 consists of bonding case body 3-1 and casing cover 3-2; Described case body 3-1 and casing cover 3-2 end face all have the hole that can make overhead electrode 2-4 and electrode boss 1-4 movement in the vertical direction.
Further, be no less than 1 subelement and be fit into case body 3-1 by the hole on case body 3-1 and casing cover 3-2;
Described electrode boss 1-4 outer face and overhead electrode 2-4 outer face, stretch out housing end face 0.5mm ~ 3mm respectively in non operating state; Under the effect of being stressed in working order, with housing end face level.
Further, the current path of described module is flowed by the vertical direction of subelement cap assembly 2 to subelement housing 1; Described module is installed fastening force and is jointly born by module housing 3 and subelement cap assembly 2, and maximum installation fastening force is 100kN.
With immediate prior art ratio, excellent effect of the present invention is:
1. high-power crimp type IGBT module provided by the invention is the contact of full compression joint type, eliminates the factor that bonding and solder joint fatigue cause component failure.
2. the present invention is by subelement cap assembly 2, realizes the two-side radiation of chip 1-1 and the Stress control of chip.
3. the present invention is by the assembling mode of subelement cap assembly 2 and module housing 3, jointly bears external tightening force by the two, realizes the requirement that the large fastening force of integral module is installed.
4. high-power crimp type IGBT module provided by the invention, its chips 1-1 is air-tight packaging, and avoid extraneous steam, the pollutions such as dust, add the impact of the electric arc between the upper and lower auxiliary member of chip simultaneously, improve the Long-Time Service reliability of device.
5. high-power crimp type IGBT module provided by the invention is by different subelement installation site in the vertical direction, realizes the crimp type IGBT module of multiple circuit topological structure.
6. the IGBT module that the present invention relates to has low thermal resistance, high reliability and be suitable for connect use advantage.
Accompanying drawing explanation
Fig. 1 is the sectional structure chart of high-power crimp type IGBT module provided by the invention, wherein: 1-subelement housing; 2-subelement cap assembly; 3-module housing;
Fig. 2 is the subelement housing cutaway view that the invention provides module, wherein: 1-1-IGBT or FRD chip; 1-2-the second auxiliary member; 1-3-the 3rd auxiliary member; 1-4-electrode boss; 1-5-subelement shell; 1-6-the first auxiliary member; 1-7-shell flange; 1-8-framework;
Fig. 3 is the subelement cap assemble cross-section that the invention provides module, wherein: 2-1-subelement lid boss; 2-2-heat-pipe radiator; 2-3-spring assembly; 2-4-overhead electrode; 2-5-positioning framework; 2-6-lid flange;
Fig. 4 is module housing appearance schematic diagram provided by the invention;
Fig. 5 is module housing cutaway view provided by the invention, wherein: 3-1-case body; 3-2-casing cover.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
The invention provides a kind of high-power crimp type IGBT module, described module is vertical stack formula encapsulating structure, and the sectional structure chart of high-power crimp type IGBT module as shown in Figure 1, comprises subelement housing 1, subelement cap assembly 2 and module housing 3; Form subelement by subelement housing 1 and subelement cap assembly 2 by cold welding encapsulation, the subelement order arrangement being no less than 1 is assemblied in module housing 3, and subelement with module housing 3, relative displacement occurs in the vertical direction, and distance is 2-3mm
The current path of module is flowed by the vertical direction of subelement cap assembly 2 to subelement housing 1; Described module is installed fastening force and is jointly born by module housing 3 and subelement cap assembly 2, and maximum installation fastening force is 100kN.
Described subelement housing 1 comprises semiconductor chip 1-1, the second auxiliary member 1-2, the 3rd auxiliary member 1-3, electrode boss 1-4, subelement shell 1-5 and the first auxiliary member 1-6; The sandwich that at least one semiconductor chip 1-1 and the first auxiliary member 1-6, at least one second auxiliary member 1-2, at least one the 3rd auxiliary member 1-3 are formed is arranged in the air tight enclosure between subelement housing 1 and subelement cap assembly 2.Subelement housing cutaway view as shown in Figure 2.
Described first auxiliary member 1-6, semiconductor chip 1-1, the second auxiliary member 1-2 and the 3rd auxiliary member 1-3 overlay in framework 1-8 from top to bottom successively, and described framework 1-8 is installed on electrode boss 1-4 by pressure contact; Described electrode boss 1-4 is connected by shell flange 1-7 with subelement shell 1-5.
Described first auxiliary member 1-6 and the 3rd auxiliary member 1-3 adopts the metal material with silicon materials similar thermal expansion coefficient, comprises tungsten, molybdenum or other alloys; The shape of described first auxiliary member 1-6 and the 3rd auxiliary member 1-3 is square sheet, and thickness is 1-2mm;
Second auxiliary member 1-2 adopts the sheet metal with high ductibility and high conductivity, comprises aluminium or silver;
Subelement shell 1-5 adopts insulating material, as pottery or epoxy resin composite material.
Described subelement cap assembly 2 comprises subelement lid boss 2-1, heat-pipe radiator 2-2, spring assembly 2-3, overhead electrode 2-4, positioning framework 2-5 and lid flange 2-6; Subelement cap assemble cross-section as shown in Figure 3.
Described subelement boss 2-1, spring assembly 2-3 and overhead electrode 2-4 are assembled into one by positioning framework 2-5, arrange at least 6 heat-pipe radiator 2-2 between described subelement boss 2-1 and spring assembly 2-3;
Described lid flange 2-6 is welded on subelement boss 2-1, described lid flange 2-6 forms air-tightness subelement by cold welding and shell flange 1-7, and namely subelement housing 1 and subelement cap assembly 2 realize the air-tight packaging of subelement by the Cold welding between shell flange 1-7 and lid flange 2-6.
Spring assembly 2-3 one end and overhead electrode 2-4 rivet, and one end crimps with subelement lid boss 2-1, and are located by positioning framework 2-5 and subelement boss 2-1;
Described heat-pipe radiator 2-2 evaporation ends and subelement lid boss 2-1 are welded by the location notch on boss and locate.
Module housing 3 consists of bonding case body 3-1 and casing cover 3-2; Described case body 3-1 and casing cover 3-2 end face all have the hole that can make overhead electrode 2-4 and electrode boss 1-4 movement in the vertical direction.Module housing appearance schematic diagram and cutaway view thereof are respectively as shown in Figures 4 and 5.
Be no less than 1 subelement by the hole mounting casing housing 3-1 on case body 3-1 and casing cover 3-2;
Described electrode boss 1-4 outer face and overhead electrode 2-4 outer face, stretch out housing end face 0.5mm ~ 3mm respectively in non operating state; Under the effect of being stressed in working order, with housing end face level.
Fill inert gas in subelement housing 1, as nitrogen, and realize air-tight packaging by the pressure welding between subelement cap assembly 2.
Of the present inventionly semiconductor chip is operated in airtightly add in the space of inert gas shielding, simultaneously by spring assembly and module housing jointly bear from user greatly to the fastening force of 100kN.
Heat, while providing elastic compression joint power for semiconductor chip, is conducted to overhead electrode 2-4 from subelement lid boss 2-1 by heat pipe structure, and finally conducts to radiator, realize the two-side radiation of semiconductor chip by subelement cap assembly 2 of the present invention.
Finally should be noted that: above embodiment is only in order to illustrate that technical scheme of the present invention is not intended to limit; although with reference to above-described embodiment to invention has been detailed description; those of ordinary skill in the field still can modify to the specific embodiment of the present invention or equivalent replacement; these do not depart from any amendment of spirit and scope of the invention or equivalent replacement, are all applying within the claims of the present invention awaited the reply.
Claims (10)
1. a high-power crimp type IGBT module, described module is vertical stack formula encapsulating structure, it is characterized in that: described module comprises subelement housing (1), subelement cap assembly (2) and module housing (3); Form subelement by subelement housing (1) and subelement cap assembly (2) by cold welding encapsulation, in module housing (3), be provided with the subelement that quantity is no less than 1 vertically; Subelement is flexibly connected with module housing (3) in the vertical direction;
Inert gas is filled in described subelement housing (1).
2. high-power crimp type IGBT module as claimed in claim 1, is characterized in that, described subelement with module housing (3), relative displacement occurs in the vertical direction, and its distance is 2-3mm.
3. high-power crimp type IGBT module as claimed in claim 1, it is characterized in that, described subelement housing (1) comprises semiconductor chip (1-1), the second auxiliary member (1-2), the 3rd auxiliary member (1-3), electrode boss (1-4), subelement shell (1-5) and the first auxiliary member (1-6);
Described first auxiliary member (1-6), semiconductor chip (1-1), the second auxiliary member (1-2) and the 3rd auxiliary member (1-3) overlay in framework (1-8) from top to bottom successively, and described framework (1-8) is installed on electrode boss (1-4) by pressure contact; Described electrode boss (1-4) is connected by shell flange (1-7) with subelement shell (1-5).
4. high-power crimp type IGBT module as claimed in claim 3, is characterized in that, described first auxiliary member (1-6) and the 3rd auxiliary member (1-3) adopt the metal material with silicon materials similar thermal expansion coefficient; The shape of described first auxiliary member (1-6) and the 3rd auxiliary member (1-3) is square sheet, and thickness is 1-2mm;
The employing of described second auxiliary member (1-2) has the sheet metal of high ductibility and high conductivity;
Described subelement shell (1-5) adopts insulating material.
5. high-power crimp type IGBT module as claimed in claim 4, is characterized in that, describedly comprises tungsten, molybdenum or alloy with the metal material of silicon materials similar thermal expansion coefficient; The described sheet metal with high ductibility and high conductivity comprises aluminium or silver; Described insulating material comprises pottery or epoxy resin composite material.
6. high-power crimp type IGBT module as claimed in claim 1, it is characterized in that, described subelement cap assembly (2) comprises subelement lid boss (2-1), heat-pipe radiator (2-2), spring assembly (2-3), overhead electrode (2-4), positioning framework (2-5) and lid flange (2-6);
Described subelement boss (2-1), spring assembly (2-3) are assembled into one with overhead electrode (2-4) by positioning framework (2-5), between described subelement boss (2-1) and spring assembly (2-3), arrange heat-pipe radiator (2-2);
Described lid flange (2-6) is welded on subelement boss (2-1), and described lid flange (2-6) forms air-tightness subelement by cold welding and shell flange (1-7).
7. high-power crimp type IGBT module as claimed in claim 6, it is characterized in that, described spring assembly (2-3) one end and overhead electrode (2-4) are riveted, one end crimps with subelement lid boss (2-1), and is located by positioning framework (2-5) and subelement boss (2-1);
Described heat-pipe radiator (2-2) evaporation ends and subelement lid boss (2-1) are welded by the location notch on boss and locate.
8. high-power crimp type IGBT module as claimed in claim 1, is characterized in that, described module housing (3) consists of bonding case body (3-1) and casing cover (3-2); Described case body (3-1) and casing cover (3-2) end face all have the hole that can make the movement in the vertical direction of overhead electrode (2-4) and electrode boss (1-4).
9. high-power crimp type IGBT module as claimed in claim 8, is characterized in that, is no less than 1 subelement and is fit into case body (3-1) by the hole on case body (3-1) and casing cover (3-2);
Described electrode boss (1-4) outer face and overhead electrode (2-4) outer face, stretch out housing end face 0.5mm ~ 3mm respectively in non operating state; Under the effect of being stressed in working order, with housing end face level.
10. high-power crimp type IGBT module as claimed in claim 1, is characterized in that, the current path of described module is flowed by the vertical direction of subelement cap assembly (2) to subelement housing (1); Described module is installed fastening force and is jointly born by module housing (3) and subelement cap assembly (2), and maximum installation fastening force is 100kN.
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| CN201410693404.3A CN104362141B (en) | 2014-11-26 | 2014-11-26 | A kind of high-power crimp type IGBT module |
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| CN201410693404.3A CN104362141B (en) | 2014-11-26 | 2014-11-26 | A kind of high-power crimp type IGBT module |
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| CN104362141B CN104362141B (en) | 2017-06-23 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107305886A (en) * | 2016-04-25 | 2017-10-31 | 华北电力大学 | A kind of high-power IGBT module for being easy to be used in series |
| CN108428677A (en) * | 2018-03-16 | 2018-08-21 | 全球能源互联网研究院有限公司 | A kind of crimp type IGBT elasticity press mounting structure and crimp type IGBT encapsulating structures |
| CN112951790A (en) * | 2021-01-27 | 2021-06-11 | 南瑞联研半导体有限责任公司 | Semiconductor module |
| CN113053831A (en) * | 2019-12-27 | 2021-06-29 | 株洲中车时代半导体有限公司 | Crimping type IGBT module and power semiconductor device |
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