CN104359562B

CN104359562B - A kind of non-refrigerated infrared detector reading circuit of current mirror manner

Info

Publication number: CN104359562B
Application number: CN201410546324.5A
Authority: CN
Inventors: 袁红辉; 陈永平; 陈世军; 翟厚明
Original assignee: Shanghai Institute of Technical Physics of CAS
Current assignee: Shanghai Institute of Technical Physics of CAS
Priority date: 2014-10-16
Filing date: 2014-10-16
Publication date: 2017-06-27
Anticipated expiration: 2034-10-16
Also published as: CN104359562A

Abstract

The invention discloses a kind of non-refrigerated infrared detector reading circuit of current mirror manner, the circuit is CTIA reading circuits, input circuit uses current mirror manner, current mirror is laid out the left and right two ends of online column circuits, metal wire of the current mirror ground wire using width more than 100 microns, current mirror adjustable side is designed with two regulation ports of coarse adjustment and fine setting；In integrating circuit, the multistage structure for amplifying that integrating capacitor is composed in parallel by three electric capacity；In output circuit, circuit CDS output ends follow structure using the low-power consumption N pipes by switch control.The advantage of the invention is that：Circuit input end reduces the complexity of detector technique making using current mirror manner；Input is designed with the working condition of two regulation ports of coarse adjustment and fine setting energy accurate adjustment system that not only expanded circuit to the scope of application of non-refrigeration infrared detector operating current again；Circuit it is low in energy consumption, multiplication factor multistage is adjustable, using sub-micron CMOS technology manufacture it is reproducible.

Description

A kind of non-refrigerated infrared detector reading circuit of current mirror manner

Technical field

The present invention relates to Infrared Detectors reading circuit field, more particularly, to a kind of alignment non-refrigerated infrared detector CMOS reading circuits are designed.

Background technology

Uncooled infrared detection technology is an important directions of Development of Infrared Technique from now on, particularly non-brake method technology Development makes infrared hot camera technique expand to such as industrial monitoring thermometric, law enforcement drug law enforcement, safety precaution, medical treatment, health, sea to rescue Help, navigating officer night vision strengthens the wide civil areas such as scope, its principle is that temperature change causes carrier concentration With the change of mobility, so as to show the signal form of resistance variations, thus heat radiation is measured, typically using current offset Mode, is changed by the voltage signal for reading non-refrigerated infrared detector two ends, the resistance variations of detector is drawn, so as to reflect Go out the difference of amount of infrared radiation and be imaged, wherein reading circuit is the important component of non-refrigeration infrared detector component.

Carried out the work of this respect both at home and abroad at present, but in actual applications many aspects need it is further complete It is kind.The CN 103900722A patents that Lv Jian of on April 18th, 2014 et al. is announced describe a kind of un-cooled infrared focal plane array Reading circuit, including detector circuit, follows the parts such as circuit, subtraction circuit, integrating circuit, and circuit structure is complicated in itself, and Need to design corresponding blind element detector to design reading circuit, increased the complexity of non-refrigerated infrared detector technique Property, the current mirror input mode that the present invention is used overcomes needs design one-to-one blind element detector therewith, substantially reduces The complexity that non-refrigerated infrared detector technique makes.The left and right two ends of online column circuits are laid out using current mirror and using low Power consumption follows pipe, is effectively improved the indexs such as the linearity, the power consumption of circuit.

The content of the invention

It is an object of the invention to provide a kind of alignment non-refrigerated infrared detector CMOS reading circuits of current mirror manner, Improve the design level of non-refrigerated infrared detector reading circuit.

A kind of alignment of high-performance non-refrigeration infrared detector 160 based on current mirror manner of present invention design reads electricity Road, it is adjustable with multiplication factor multistage the need for 10K Ω~100K Ω resistance non-refrigerated infrared detectors signal reading can be met Function, the signal for being adapted to different responsiveness detectors reads.The cellular construction of its circuit is as shown in figure 1, including current mirror pattern Input stage, the CTIA of difference amplifier, CDS+N follows, export P follows.Fig. 2 is the current mirror of input stage, NM5 and NM1 structures Into the input stage current mirror of coarse adjustment, NM4 and NM2 constitutes the input stage current mirror of fine setting.Va, vb are respectively coarse adjustment, fine setting outer end Mouthful.Res is integral restrictor, is integrating state when level is high, is off state when level is low, and bolometer parts are non-brake method The position of Infrared Detectors.Fig. 3 is CTIA structures, and C1, C2, C3 are three integrating capacitors, electric capacity on the basis of wherein C1, C2, C3 Controlled by select1, select2 respectively.Amplifier uses difference amplifier, in and out to terminate integrating capacitor, Differential Input Another input termination ref, the voltage at ref ends must can just make circuit normal work more than the threshold voltage of N pipes.Fig. 4 is low work( The CDS N of consumption are followed, and C6, C7 are sampling capacitance, and sha, shb and shaf, shbf are complementary pulse, the sampling of control signal.col The output port of shift register is connect, alignment output signal is sequentially read out.

It is characterized in that：The circuit uses the reading circuit structure of current mirror input mode, without traditional and response element One-to-one blind element detector design, can there is the complexity for reducing detector technique；The setting of input coarse adjustment, can expand electricity To the scope of application of non-refrigerated infrared detector bias current, finely tuning the setting of port can accurately set the best effort of system on road State；When domain is drawn, current mirror ground wire is more than 100 microns of metal wire using width and left and right two ends all set current mirror, energy The heterogeneity of system is effectively reduced, the non-linear of its 160 alignment circuit is less than 1%；Three settings of integrating capacitor can be with Make circuit that there is larger adaptability, meet different detector sensitivity requirements；Followed using first N, the export structure that rear P is followed Can effectively increasing circuit output voltage swing.

Advantages of the present invention is as follows：

1. circuit input end uses current mirror manner, is set with the one-to-one blind element detector of response element without traditional Meter, greatly reduces the complexity of detector technique making.

2. input is designed with two regulation ports of coarse adjustment and fine setting；Both circuit had been expanded to non-refrigeration infrared detector work Make the scope of application of electric current, and the working condition of energy accurate adjustment system.

3. current mirror is laid out the left and right two ends of online column circuits, and when domain is drawn, ground wire is more than 100 microns using width Metal wire, the non-thread performance of circuit is effectively improved, and the non-linear of its circuit of alignment 160 is less than 1%；

4. integrating capacitor is made up of tri- electric capacity of 10pF, 20pF, 20pF, is combined into multistage multiplication factor, enables circuit Adapt to the requirement of different uncooled detector responsivenesses.

5. designed using the pipe that follows of low-power consumption, followed using first N, rear P is followed, both reduced the power consumption of circuit, increased again The amplitude of oscillation of circuit is added.

6. non-refrigerated infrared detector reading circuit design is fabricated by using the sub-micron CMOS technology of standard, it is ensured that The repeatability of chip manufacturing.

Brief description of the drawings

The non-refrigerated infrared detector reading circuit cellular construction figure of Fig. 1 current mirror manners.

The non-refrigerated infrared detector reading circuit current mirror portion structure chart of Fig. 2 current mirror manners.

The non-refrigerated infrared detector reading circuit CTIA part-structure figures of Fig. 3 current mirror manners.

The CDS N of the non-refrigerated infrared detector reading circuit low-power consumption of Fig. 4 current mirror manners follow structure chart.

Specific embodiment

Specific embodiment of the invention is described in further detail below in conjunction with the accompanying drawings：

Implementation method 1

This invention uses input for current mirror manner to design non-refrigerated infrared detector alignment reading circuit, its unit As shown in figure 1, Vbias is to be added in voltage on uncooled detector (Bolo), the voltage can be visited structure chart according to non-brake method The size for surveying device resistance does appropriate adjustment, and when uncooled detector resistance is in 50K Ω, Vbias may be set to 5V, when non-system Cold detector resistance be less than 20K Ω when, Vbias can be turned down according to circumstances, but it is minimum can not be less than 3V, can otherwise cause difference to be put The voltage of big device input is too low to make circuit normal work；Conversely, but uncooled detector resistance be more than 100K Ω when, Vbias can be heightened according to circumstances, but highest will otherwise influence the performances such as the reliable life of circuit no more than 7V.Ref is poor Divide amplifier input reference voltage, this voltage is starting voltage when CTIA is integrated, and is usually set to 1V, minimum to cannot be below N The threshold voltage of pipe, otherwise distortion can occurs in the low side of signal.Ci is integrating capacitor, can be according to non-refrigerated infrared detector The size of responsiveness is selected；For the detector signal for enabling alignment sequentially reads, CDS N need to be added in the output end of CTIA Follow, behind reconnect P follow.Implementation method 2

The circuit uses current mirror manner in input, and the circuit structure of its current mirror manner is as shown in Fig. 2 due to NM4 Breadth length ratio be 10 times of NM5, so NM5 and NM1 constitutes the input stage current mirror of coarse adjustment control, NM4 and NM2 constitutes fine setting control The input stage current mirror of system, va, vb are respectively coarse adjustment, fine setting external port.Res is integral restrictor, in integration shape when level is high State, is off state when level is low, the drain electrode (upper end) of NM3 connects non-refrigerated infrared detector.When domain is drawn, current mirror cloth The left and right two ends of the online column circuits of office, metal wire of the ground wire using width more than 100 microns.The alignment designed using the method Its nonlinearity of 160 circuits is less than 1%.

The pipe reference dimension of current mirror portion is (unit is micron) as shown in the table.

Pipe

PM1

PM2

NM1

NM2

NM3

NM4

NM5

W/L

12/3

90/3

6/3

800/1

80/1

Implementation method 3

The circuit is using the CTIA circuit structures of Differential Input as shown in figure 3, integrating capacitor is by tri- electric capacity of C1, C2, C3 Composition, size is respectively 10pF, 20pF, 20pF, and electric capacity on the basis of wherein C1, C2, C3 are controlled by select1, select2 respectively System, different collectively form different amplification, and circuit adapts to the requirement of uncooled detector difference responsiveness.When When select1, select2 are high, total integrating capacitor is 50pF, is suitable for the reading of responsiveness signal high, when When select1, select2 are low, total integrating capacitor is 10pF, is suitable for the reading of low-response rate signal.Amplifier is adopted With difference amplifier, in and out termination integrating capacitors, another input of Differential Input is reference voltage end ref.

The CMOS differential amplifier circuits use the Foldable cascade structure of Differential Input, the open loop that one-level is amplified Gain has just exceeded 80dB, overcomes the shortcoming that two-stage differential amplifying circuit easily causes vibration, each of which pipe reference dimension (unit is micron) as shown in the table.

Pipe

M0

M5、M6

M7、M14

M13、M17

M16、M18

M1、M11

reset

W/L

25/5

50/2

15/3

10/10

2/1

Implementation method 4

The output end of circuit is followed, is followed by the structure that P is followed using the N of elder generation CDS, and the output voltage swing of the structure is easy for 2V can be more than, the N of its CDS follows circuit structure as shown in figure 4, N follows part only to be opened when col ends are low level, has Power consumption, when col ends are high level, N follows closing, almost idle, so total circuit is low-power consumption structure, power consumption very little, The total power consumption of 160 alignment circuits is less than 100 milliwatts.The voltage at col ends is provided by shift register, controls 160 alignment signals It is sequentially read out.

Sha and shb is two sampling pulses, and shaf, shbf are the complementary pulse of sha, shb, control the output end of CTIA To electric capacity is used, the sampling time is respectively set as the initial value and completion value of CTIA integrations to signal transmission, and C6 and C7 is correspondence two The sampling capacitance of individual sampling pulse, its size is 2pF, and other each pipe reference dimensions are (unit is micron) as shown in the table.

Pipe	NM6、NM	PM6、PM7	NM8、NM9	PM8、PM9
					W/L	3/0.6	6/0.6	32.5/1.2	65/1.2

Above by specific embodiment, the present invention is described, but the present invention is not limited to these specific implementations Example.It will be understood by those skilled in the art that various modifications, equivalent, change etc. can also be made to the present invention, these conversion Without departing from spirit of the invention, all should be within protection scope of the present invention.

Claims

1. a kind of non-refrigerated infrared detector reading circuit of current mirror manner, described reading circuit is CTIA reading circuits, Including input circuit, integrating circuit, output circuit, it is characterised in that：

Described input circuit uses current mirror manner, current mirror to be laid out the left and right two ends of online column circuits, and current mirror ground wire is adopted Metal wire with width more than 100 microns, including NM5 and NM1 constitutes the input stage current mirror of coarse adjustment, and NM4 and NM2 constitutes fine setting Input stage current mirror, current mirror adjustable side be designed with coarse adjustment and fine setting two regulation ports；

In described integrating circuit, the multistage structure for amplifying that integrating capacitor is composed in parallel by three electric capacity, different combinations are formed Different multiplication factors；

In described output circuit, circuit CDS output ends follow structure using the low-power consumption N pipes by switch control, and circuit CDS is defeated Go out behind end and meet P and follow.