CN112556862B - Large dynamic range, small area readout circuit using current mirror for mode switching - Google Patents
Large dynamic range, small area readout circuit using current mirror for mode switching Download PDFInfo
- Publication number
- CN112556862B CN112556862B CN202011225598.6A CN202011225598A CN112556862B CN 112556862 B CN112556862 B CN 112556862B CN 202011225598 A CN202011225598 A CN 202011225598A CN 112556862 B CN112556862 B CN 112556862B
- Authority
- CN
- China
- Prior art keywords
- circuit
- current mirror
- sampling
- current
- integration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 37
- 238000005070 sampling Methods 0.000 claims abstract description 35
- 230000010354 integration Effects 0.000 claims abstract description 33
- 238000012545 processing Methods 0.000 claims abstract description 12
- 230000000694 effects Effects 0.000 claims abstract description 4
- 230000000630 rising effect Effects 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 7
- 238000003331 infrared imaging Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 238000011160 research Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000004438 eyesight Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 238000003491 array Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 241000282414 Homo sapiens Species 0.000 description 1
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000701 chemical imaging Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003333 near-infrared imaging Methods 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J2005/106—Arrays
Abstract
The invention discloses a large dynamic range and small area readout circuit using a current mirror to automatically switch modes, which comprises: an integrating circuit using a capacitance negative feedback trans-impedance amplifier structure for integrating and calculating the photocurrent; a sampling circuit for sampling and holding the integration result; the current mirror is used for scaling the input photocurrent so as to adapt to the requirements of different integration modes, when the current is increased to the saturation of the integration capacitor, the input current is reduced by 1/N by using the current mirror, and the capacitance value required for processing the input current in the same dynamic range is reduced to the original 1/N, so that the effect of reducing the area of a chip is achieved; a control circuit for providing control signals for switching between different modes processes a continuous input signal.
Description
Technical Field
The invention relates to the field of near-infrared imaging and near-infrared astronomical detection, in particular to a large-dynamic-range and small-area reading circuit for switching modes by using a current mirror.
Background
The infrared imaging technology is a widely used technology, and mainly detects infrared rays radiated by objects in a target scene and outputs the infrared rays in the form of images or videos, so that invisible infrared rays are converted into visible forms, and the 'field of vision' of human beings is expanded. Since the first application of the second war, the infrared imaging technology has been developed to a great extent, and the technology is expanded to application scenes such as communication, guidance, spectral imaging and the like from the initial night vision. With the continuous and deep research of the internet of things and computer vision, the infrared imaging technology becomes a great supplement to the traditional vision information, and can provide a large amount of image data for research and processing. In recent years, infrared imaging technology-related research is attracting much attention.
The infrared imaging system mainly comprises: optical system, infrared focal plane array, reading circuit, A/D converter, signal processing, data storage and information display. The infrared focal plane array and the readout circuit are core parts of the system, and a special infrared readout circuit is usually required to be designed to amplify and reduce noise of signals so as to ensure the effectiveness of signal extraction, and the linearity, noise, readout rate, power consumption and other performances of the imaging system are directly limited by the readout circuit. The data processing process is difficult if no good-performance reading circuit is available, so that the research and design of a high-performance reading circuit is an effective way for fundamentally improving the overall performance of the system.
At present, a commonly used readout circuit is mainly designed and prepared by using a complementary metal oxide semiconductor process platform, and the readout circuit under the process has the characteristics of good compatibility, low circuit power consumption, strong radiation resistance, various readout modes and the like. With the increasingly finer image requirements and the increasingly larger detector array sizes, the overall power consumption and area of the system are also increasingly larger, so that it is important to optimize the performance of each readout circuit unit in the array.
In recent years, the research on infrared focal plane arrays and readout circuits thereof at home and abroad continues to be deep, and high integration and large dynamic range become the main development trend thereof. In order to enable the detector array to adapt to different environmental light intensities, a read-out circuit with a large dynamic range is developed by the Korean air military information organization, a plurality of capacitors are used in the read-out circuit, a proper integrating capacitor is judged and selected to work through a logic unit, two integrating modes of high-speed small signals and high charge capacity are realized, and the dynamic range reaches 101dB[1]. Due to the fact that the plurality of sampling capacitors are used, the circuit layout area is large, and the array integration level is low. In order to make the detector compatible with various working modes, the Chen and the Ming dynasty design a three-capacitor negative feedback trans-impedance amplifier as the integral part of a reading circuit, the three capacitors are respectively suitable for an active mode, a low-current passive mode and a high-current passive mode of the reading circuit, and the area of the reading circuit is larger (100 mu m multiplied by 100 mu m) by using three sampling capacitors, thereby limiting the integration level of the infrared focal plane array[2]. To improve imaging resolution, Shanghai techniqueThe capacitance sharing technology is used to manufacture a 320 x 256 infrared focal plane array. The four detectors share one integrating circuit, so that the layout area of the integrating circuit is greatly reduced, but the design reduces the data processing rate, and the reading rate is only 2.41MHz[3]。
Reference to the literature
[1]Kim Y S,Woo D H,Jo Y M,et al.Low-Noise and Wide-Dynamic-Range ROIC With a Self-Selected Capacitor for SWIR Focal Plane Arrays[J].IEEE Sensors Joμrnal,2017,17(1):179-184.
[2] Chen nationality is strong, HgCdTe e- -APD active and passive readout circuit design [ D ]. university of Chinese academy of sciences, 2014.
[3]Zhai Y,Ding R.320×256LW IRFPA ROIC with large charge capacity[J].Infrared and Laser Engineering,2016,45(9):88-90.
Disclosure of Invention
The invention provides a reading circuit which uses a current mirror to switch modes and has a large dynamic range and a small chip area, and on the premise of ensuring the requirement of integration precision, the reading circuit replaces a capacitor array in the traditional structure to realize the purposes of expanding the dynamic range of input current and reducing the chip area; meanwhile, due to the adoption of the automatic mode selection module, the invention can process continuous input signals, and the following description is provided for details:
a large dynamic range, small area readout circuit using a current mirror for automatic mode switching, the readout circuit comprising:
an integrating circuit using a capacitance negative feedback trans-impedance amplifier structure for integrating and calculating the photocurrent;
a sampling circuit for sample-holding the integration result;
the current mirror is used for scaling the input photocurrent so as to adapt to the requirements of different integration modes, when the current is increased to the saturation of the integration capacitor, the current mirror is used for reducing the input current by 1/N, and the capacitance value required for processing the input current in the same dynamic range is reduced to the original 1/N, so that the effect of reducing the area of a chip is achieved;
a control circuit for providing control signals for switching between different modes processes a continuous input signal.
Wherein the control circuit is:
initial control signal
At a high level, the transistor M3Conducting, integrating circuit working, integrating voltage VintThe rising and sampling circuit samples the integration result and holds the result in the capacitor CshThe last sampling is carried out until the next sampling is started;
in the holding stage, the control circuit compares the sampling voltage VshAnd a reference voltage Vref2：
If the input current is large, the integrating capacitor CintReach saturation, VintLarger, sampling result VshHigher than reference voltage Vref2V of automatic control moduleconTerminal output high level, transistor M1And M2On, M3Cutting off, and reducing the input signal by the current mirror access circuit;
if the input current is small, the integral voltage VintSmaller, sampling result VshBelow the reference voltage Vref2V of the control circuitconEnd output low level, M1And M2Cutoff, M3And the current mirror is conducted and is not connected into the circuit.
The technical scheme provided by the invention has the beneficial effects that:
1. the area of the reading circuit is small: the small-area readout circuit means that more readout circuit units can be integrated in the focal plane array under the same area, and the resolution of an image is improved;
2. the input dynamic range is large: the large dynamic range means that the results obtained when processing input signals of large amplitude variations are more accurate;
3. automatic mode switching: compared with the switching of the external input signal, the automatic mode switching has higher response speed, and the processing result of the continuous signal is more accurate.
In conclusion, the invention has great improvement on the integration level of the focal plane array and the precision of the whole reading circuit, and has wider application prospect.
Drawings
FIG. 1 is a schematic diagram of a conventional capacitor negative feedback transimpedance amplifier type integral sampling circuit;
FIG. 2 is a schematic diagram of a sensing circuit with a current mirror according to the present invention;
FIG. 3 is a diagram illustrating simulation results of a small input current of 20 μ A according to the present invention;
FIG. 4 is a diagram illustrating the simulation result of 40 μ A current according to the present invention;
FIG. 5 is a diagram illustrating the simulation results of 60 μ A current of the present invention;
FIG. 6 is a schematic diagram of the dynamic ranges of a 2:1 current mirror and a 3:1 current mirror without a current mirror according to the present invention;
FIG. 7 is a schematic diagram of a capacitor and current mirror layout of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in further detail below.
Example 1
A large dynamic range, small area readout circuit using current mirrors for automatic mode switching, see fig. 1 and 2, comprising:
an integrating circuit using a capacitance negative feedback trans-impedance amplifier structure for integrating and calculating the photocurrent;
a sampling circuit for sampling and holding the integration result;
a current mirror for scaling the input photocurrent to accommodate the requirements of different integration modes;
a control circuit for providing control signals for switching between different modes.
Wherein the control circuit mainly comprises a comparator and a plurality of switches, and the voltage V is sampled in each clock periodshAnd a reference voltage Vref2Comparing, if the photocurrent is larger, the sampling voltage is larger than the reference voltage of the comparator, and the control signal is set at high levelThe current mirror is connected between the integrator and the detector to reduce photocurrent. Meanwhile, the control signal also realizes the adjustment of the integration time and the reference voltage value.
Example 2
The embodiment of example 1 is further described below with reference to the drawings and examples, and is described in detail below:
fig. 1 is a schematic diagram of an integrating and sampling circuit of a conventional capacitor negative feedback transimpedance amplifier structure, which has a lower input impedance compared to a direct integration or buffer integration structure, so that the capacitor negative feedback transimpedance amplifier structure has higher injection efficiency and better linearity, and the introduced noise is smaller.
In order to meet the requirements of a read-out circuit on multi-mode and large dynamic range, an integrating capacitor array structure is a main method for improving the performance of the read-out circuit at present. In order to quickly sample the integrated signal, the sampling capacitors are selected from 1/8 to 1/5, so that the integration capacitors become a main factor influencing the circuit area of the unit. The area occupied by the capacitor in the traditional unit circuit layout is about 40 percent of the whole unit circuit area. However, a smaller integration capacitance means a smaller input current processing range while ensuring linearity of the readout circuit.
In order to reduce the area of a capacitor while not affecting the linearity and dynamic range of an integrating circuit, the embodiment of the invention provides a circuit structure which uses a current mirror to replace an integrating capacitor array to realize multiple working modes. When the current is small, the circuit works normally, and when the current is increased to the saturation of the integral capacitor, the input current is reduced by 1/N by using the current mirror, so that the normal work of the circuit can be ensured, the capacitance value required for processing the input current with the same dynamic range is reduced to 1/N, and the effect of reducing the area of a chip is achieved.
Fig. 2 is a block diagram of a basic structure of the present invention, which mainly includes a current mirror module and a circuit for determining an integration result, compared with a conventional capacitor negative feedback transimpedance amplifier circuit.
The working principle is as follows: the detector PD input current in the diagram is assumed to have large changeRandom signal of (2), initial control signal
At a high level, the transistor M3Conducting, the integrating circuit starts to work, and the voltage V is integrated in the integrating periodintRising, the sampling switch is turned on after the integration period, the sampling circuit samples the integration result and keeps the result in the capacitor CshUp until the start of the next sample. In the holding phase, the automatic control module compares the sampling voltage VshAnd a reference voltage Vref2If the input current is larger, the integrating capacitor CintReach saturation, VintLarger, at this time, the sampling result VshHigher than reference voltage Vref2V of automatic control moduleconTerminal output high level, transistor M1And M2On, M3Cutting off, and reducing the input signal by the current mirror access circuit; if the input current is small, the integral voltage VintSmaller, sampling result VshBelow the reference voltage Vref2V of automatic control moduleconEnd output low level, M1And M2Cutoff, M3And when the current mirror is conducted, the current mirror is not connected into the circuit, and the circuit works normally.
FIG. 3 is a diagram showing the simulation result of the circuit when a small current of 20 μ A is inputted. During the first integration period (100ns), the output V obtained by the sampling circuitsh2.52V, lower than the reference voltage Vref2(2.8V), the integral capacitor does not reach the saturation state, and the output end V of the automatic control moduleconAnd the current mirror is not connected with the circuit and judges after the next integration period.
FIG. 4 is a graph of the circuit simulation results using a 2:1 current mirror with an input current of 40 μ A. When the input current is 40 muA, in the first integration period (100ns), the integration capacitor is saturated, and the sampling circuit obtains the output result VshIs 3.22V and is greater than the reference voltage Vref2(2.8V), output end V of automatic control moduleconAt high level (3.28V), the current mirror is connected into the circuit, and then the reference voltage Vref2Adjusting the voltage to 1.9V; during the second integration period, the input currentAfter the current mirror is reduced by 2 times, the sampling capacitor is not saturated any more, and the output result V obtained by the sampling circuitsh2.52V, greater than the updated reference voltage Vref2(1.9V), so that the output end V of the control signalconStill put at high level, the current mirror continues to process the input current.
FIG. 5 shows the simulation results of the circuit using a 3:1 current mirror access with an input current of 60 μ A. As can be seen, the current amplitude which can be normally processed by adopting the 3:1 current mirror is larger, and the circuit has a larger dynamic range.
Fig. 6 is a diagram comparing the dynamic range of the conventional integrating and sampling circuit with the dynamic range of the circuit after the current mirror is introduced. As can be seen from the figure, in the conventional integrating and sampling circuit without the current mirror, when the input current reaches 25 μ a, the integrating capacitor tends to be saturated, and the larger input current causes the nonlinearity of the output result; if a 2:1 current mirror is connected to process the current exceeding the threshold, the maximum value of the input current can reach 50 muA; if a 3:1 current mirror is switched in to process the input current, the integratable maximum current reaches 70 muA. Therefore, the input optical current is reduced by using the current mirror, and the dynamic range of the reading circuit can be remarkably expanded.
FIG. 7 is a schematic diagram of layout area of metal-insulator-metal (MIM) capacitors of 1pF and 500fF fabricated by 0.18 μm standard CMOS process in a foundry. For comparison, the layout area of the 2:1 current mirror is also shown, and the whole area of the 1pF capacitor is 23 μm (529 μm)2) The 500fF capacitor area is 16 μm by 16 μm (256 μm)2) The area of the current mirror is 6.1 μm × 4.6 μm (28.06 μm)2). The combination of the 2:1 current mirror and the 500fF capacitor can replace the 1pF capacitor to achieve the same dynamic range, so that the chip area can be obviously reduced.
In summary, the embodiment of the present invention uses the capacitance negative feedback transimpedance amplifier integrating circuit with a current mirror, and can automatically switch between different operating modes under the condition of using only one capacitance, thereby increasing the dynamic range of the input current, reducing the chip area, and facilitating the realization of an infrared imaging system with large dynamic range and high resolution.
In the embodiment of the present invention, except for the specific description of the model of each device, the model of other devices is not limited as long as the device can perform the above functions.
Those skilled in the art will appreciate that the drawings are only schematic illustrations of preferred embodiments, and the above-described embodiments of the present invention are merely provided for description and do not represent the merits of the embodiments.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (1)
1. A large dynamic range, small area readout circuit using a current mirror for automatic mode switching, the readout circuit comprising:
an integrating circuit using a capacitance negative feedback trans-impedance amplifier structure for integrating and calculating the photocurrent;
a sampling circuit for sampling and holding the integration result;
the current mirror is used for scaling the input photocurrent so as to adapt to the requirements of different integration modes, when the current is increased to the saturation of the integration capacitor, the current mirror is used for reducing the input current by 1/N, and the capacitance value required for processing the input current in the same dynamic range is reduced to the original 1/N, so that the effect of reducing the area of a chip is achieved;
a control circuit for providing control signals for switching between different modes, and for processing continuous input signals;
wherein the control circuit is:
initial control signal
At a high level, the transistor M3Conducting, the integration circuit working normally, the integration voltage VintThe rising and sampling circuit samples the integration result and holds the result in the capacitor CshThe sampling is carried out until the next sampling is started;
in the hold phase, the control circuitComparing the sampled voltage VshAnd a reference voltage Vref2：
If the input current is large, the integral capacitance CintReach saturation, VintLarge, sampling result VshHigher than reference voltage Vref2V of automatic control moduleconTerminal output high level, transistor M1And M2On, M3The current mirror is connected into the circuit to reduce the input current signal when the circuit is cut off;
if the input current is small, the integral voltage VintSmall, sampling result VshBelow the reference voltage Vref2V of the control circuitconEnd output low level, M1And M2Cutoff, M3And the current mirror is conducted and is not connected into the circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011225598.6A CN112556862B (en) | 2020-11-05 | 2020-11-05 | Large dynamic range, small area readout circuit using current mirror for mode switching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011225598.6A CN112556862B (en) | 2020-11-05 | 2020-11-05 | Large dynamic range, small area readout circuit using current mirror for mode switching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112556862A CN112556862A (en) | 2021-03-26 |
| CN112556862B true CN112556862B (en) | 2022-07-01 |
Family
ID=75041668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011225598.6A Active CN112556862B (en) | 2020-11-05 | 2020-11-05 | Large dynamic range, small area readout circuit using current mirror for mode switching |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112556862B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113194272B (en) * | 2021-04-28 | 2022-05-20 | 电子科技大学 | Large dynamic range reading circuit for photoelectric detector |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102523392A (en) * | 2011-12-29 | 2012-06-27 | 天津大学 | Circuit capable of improving dynamic range of image sensor and control method thereof |
| CN102722213A (en) * | 2012-06-26 | 2012-10-10 | 昆明物理研究所 | Photovoltaic detector read-out unit circuit applying inverted voltage follower |
| CN103439645A (en) * | 2013-09-05 | 2013-12-11 | 中国电子科技集团公司第四十四研究所 | CTIA-type CMOS focal plane reading circuit and testing method |
| CN104359562A (en) * | 2014-10-16 | 2015-02-18 | 中国科学院上海技术物理研究所 | Current-mirror-mode reading circuit of non-refrigeration infrared detector |
| CN104568170A (en) * | 2015-01-28 | 2015-04-29 | 江苏物联网研究发展中心 | Infrared focal plane interface circuit capable of increasing integral amplitude |
| CN104748864A (en) * | 2015-03-31 | 2015-07-01 | 中国科学院上海技术物理研究所 | CMOS (complementary metal-oxide semiconductor) infrared detector reading-out circuit capable of realizing element-by-element dark current suppression |
| CN104767526A (en) * | 2015-04-21 | 2015-07-08 | 北京大学 | Comparator applied to infrared focal plane array digital readout circuit |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2945120B1 (en) * | 2009-04-30 | 2015-11-27 | Ulis | SYSTEM AND METHOD FOR DETECTING INFRARED RADIATION |
| CN103776544B (en) * | 2014-01-09 | 2016-07-27 | 电子科技大学 | A kind of reading circuit of un-cooled infrared focal plane array |
| CN204165656U (en) * | 2014-10-16 | 2015-02-18 | 中国科学院上海技术物理研究所 | The non-refrigerated infrared detector sensing circuit of current mirror manner |
| CN105222900B (en) * | 2015-09-15 | 2018-09-28 | 工业和信息化部电子第五研究所 | Infrared focal plane array reading circuit |
-
2020
- 2020-11-05 CN CN202011225598.6A patent/CN112556862B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102523392A (en) * | 2011-12-29 | 2012-06-27 | 天津大学 | Circuit capable of improving dynamic range of image sensor and control method thereof |
| CN102722213A (en) * | 2012-06-26 | 2012-10-10 | 昆明物理研究所 | Photovoltaic detector read-out unit circuit applying inverted voltage follower |
| CN103439645A (en) * | 2013-09-05 | 2013-12-11 | 中国电子科技集团公司第四十四研究所 | CTIA-type CMOS focal plane reading circuit and testing method |
| CN104359562A (en) * | 2014-10-16 | 2015-02-18 | 中国科学院上海技术物理研究所 | Current-mirror-mode reading circuit of non-refrigeration infrared detector |
| CN104568170A (en) * | 2015-01-28 | 2015-04-29 | 江苏物联网研究发展中心 | Infrared focal plane interface circuit capable of increasing integral amplitude |
| CN104748864A (en) * | 2015-03-31 | 2015-07-01 | 中国科学院上海技术物理研究所 | CMOS (complementary metal-oxide semiconductor) infrared detector reading-out circuit capable of realizing element-by-element dark current suppression |
| CN104767526A (en) * | 2015-04-21 | 2015-07-08 | 北京大学 | Comparator applied to infrared focal plane array digital readout circuit |
Non-Patent Citations (2)
| Title |
|---|
| Current Mirroring Integration Based Readout Circuit for High Performance Infrared FPA Applications;Haluk Kulah;《IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS》;20030404;第50卷(第4期);全文 * |
| 改进型电流镜积分红外探测器读出电路设计;李伟;《激光与红外》;20090131;第39卷(第1期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112556862A (en) | 2021-03-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7542085B2 (en) | Image sensor with a capacitive storage node linked to transfer gate | |
| US5541654A (en) | Focal plane array imaging device with random access architecture | |
| US7825967B2 (en) | Column-wise clamp voltage driver for suppression of noise in an imager | |
| CN207321395U (en) | A kind of imaging pixel with row comparator | |
| US7385166B2 (en) | In-pixel kTC noise suppression using circuit techniques | |
| US6121843A (en) | Charge mode capacitor transimpedance amplifier | |
| CN101690176A (en) | Photoelectric conversion circuit and possess the solid camera head of this circuit | |
| US20030183850A1 (en) | CMOS imager for pointing and tracking applications | |
| US11438530B2 (en) | Pixel unit with a design for half row reading, an imaging apparatus including the same, and an imaging method thereof | |
| CN112556862B (en) | Large dynamic range, small area readout circuit using current mirror for mode switching | |
| JP2006505159A (en) | Photoelectric sensor | |
| Coulombe et al. | Variable resolution CMOS current mode active pixel sensor | |
| CN110971844B (en) | Circuit for expanding full-well capacity of pixels of CMOS image sensor | |
| CN113228623B (en) | Ultra-high dynamic range CMOS sensor | |
| CN105222900B (en) | Infrared focal plane array reading circuit | |
| CN114640808B (en) | High dynamic range image sensor pixel unit based on reset transistor multiplexing technology | |
| Kuo | A novel linear-logarithmic active pixel CMOS image sensor with wide dynamic range | |
| US8902343B1 (en) | Charge pump for pixel floating diffusion gain control | |
| CN112040157A (en) | Image sensor with reduced signal sampling kickback | |
| KR100977834B1 (en) | ???? Image Sensor with Wide Dynamic Range | |
| CN112699853B (en) | Fingerprint identification circuit, driving method thereof and fingerprint identification equipment | |
| US20230253436A1 (en) | Image sensor and operation method thereof | |
| US20240015414A1 (en) | Pixel circuit for high dynamic range image sensor | |
| CN113422918B (en) | Pixel unit for improving dynamic range, array and array driving method | |
| US20230188866A1 (en) | Low Row Noise Ramp Generator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |