CN103905037B - A kind of host-guest architecture frequency calibration circuit for Gm-C wave filter - Google Patents
A kind of host-guest architecture frequency calibration circuit for Gm-C wave filter Download PDFInfo
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- CN103905037B CN103905037B CN201410085525.XA CN201410085525A CN103905037B CN 103905037 B CN103905037 B CN 103905037B CN 201410085525 A CN201410085525 A CN 201410085525A CN 103905037 B CN103905037 B CN 103905037B
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Abstract
The invention discloses a kind of host-guest architecture frequency calibration circuit for Gm C wave filter, this frequency calibration circuit comprises trsanscondutance amplifier host-guest architecture control circuit and RC oscillating circuit and Digital Logical Circuits；Main trsanscondutance amplifier in host-guest architecture control circuit and matching from trsanscondutance amplifier in Gm C wave filter, controlled by identical bias voltage, making its transconductance value Gm with the resistance R in master & slave control circuit the most inversely, trsanscondutance amplifier fabrication error is changed into the impact on frequency of the resistance fabrication error to the impact of frequency.The feature that frequency calibration circuit has simple in construction, robustness is good compared to traditional Gm C wave filter.
Description
Technical field
The present invention relates to a kind of host-guest architecture frequency calibration circuit for Gm-C wave filter.
Background technology
Calibration circuit is requisite module in integrated filter circuit.Along with the development of semiconductor integrated circuit, simulation
Numeral single-chip increasingly becomes main flow, and Low Medium Frequency wave filter is as radio transceiver machine, the crucial electricity of sensor interface
Road is the most usually chosen to be integrated on chip, to reduce system dimension, reduce cost and improve systematic function.But due to system
Making the impacts such as the technological factor such as tolerance, technique change and device aging, the frequency characteristic of wave filter can occur large change.
As the process deviation of resistance capacitance 20% will cause the error of filter frequencies 30%～50%.Solution is exactly integrated
Wave filter adds frequency calibration circuit, the parameter of self-adaptative adjustment device, makes the frequency characteristic of wave filter realize needs
Function.
The frequency calibration circuit of different types of integrated filter is different.The frequency characteristic of active RC filter is by the RC time
Constant determines, resistance capacitance uses the form of array, and the code check being changed array by Digital Logic can change wave filter
Frequency characteristic, frequency detection circuit can use integrator or agitator to realize.Testing circuit based on integrator due to
The analogue signal processed needs the circuit power consumption such as amplifier, comparator big, and structure is complicated, and detection based on agitator is electric
Road only needs phase inverter to realize, simple in construction low in energy consumption, therefore based on agitator in the many employings in low-power consumption application scenario
Frequency calibration circuit.Being different from active RC filter, Gm-C wave filter has the feature of super low-power consumption, therefore in main flow
Low power dissipation design circuit in use Gm-C wave filter more.But the frequency characteristic of Gm-C wave filter is by time constant C/Gm
Determining, wherein Gm is the transconductance value of operation transconductance amplifier, tail current source determine, typically by regulation bias voltage
Change, continuous print analogue signal can only be used to regulate.Traditional Gm-C filter frequencies based on phaselocked loop calibration electricity
Road mainly comprises voltage controlled oscillator, phase discriminator, three modules of low-pass filtering.Agitator, phase discriminator are with low
Bandpass filter constitutes control loop, after loop-locking, the frequency of oscillation of voltage controlled oscillator VCO and the input reference of phase discriminator
Clock frequency is identical, and voltage controlled oscillator VCO matches with trsanscondutance amplifier in Gm-C wave filter and electric capacity, the most permissible
It is determined by the input reference frequency of phase discriminator to determine Gm-C filter IF rate characteristic.But this calibration circuit is several
Individual module is required to consume the biggest power consumption, and voltage controlled oscillator there is also amplitude limit and stability problem simultaneously.
The master & slave control thought of trsanscondutance amplifier occurs from variable gain amplifier the earliest, and variable gain amplifier wants real
Existing high-precision gain-adjusted, the required precision to the transconductance value of trsanscondutance amplifier is higher, and the transconductance value of trsanscondutance amplifier is led to
Normal and multiple device parameters is relevant, is also simple linear correlation simultaneously, and therefore directly regulation is difficult to high accuracy.Adopt
With host-guest architecture, by main trsanscondutance amplifier, transconductance value is changed into relevant variable linear to a certain parameter, such as electric
Pressure value or clock frequency, the reference voltage provided by system or reference clock can be by the mutual conductances of main trsanscondutance amplifier
Value is fixed as an exact value, controlling from trsanscondutance amplifier acceptor's trsanscondutance amplifier in variable gain amplifier, thus real
Existing high-precision yield value.
Accordingly, it would be desirable to a kind of new host-guest architecture frequency calibration circuit for Gm-C wave filter is to solve the problems referred to above.
Summary of the invention
Goal of the invention: the present invention is directed to the defect of variable gain amplifier in prior art, it is provided that a kind of lifting change in gain
The host-guest architecture frequency calibration circuit for Gm-C wave filter of scope.
Technical scheme: for solving above-mentioned technical problem, the host-guest architecture frequency calibration for Gm-C wave filter of the present invention
Circuit adopts the following technical scheme that
A kind of host-guest architecture frequency calibration circuit for Gm-C wave filter, including trsanscondutance amplifier master & slave control circuit,
Described trsanscondutance amplifier master & slave control circuit includes the first p-type metal-oxide-semiconductor field effect t (PM1), the 2nd P
Type metal-oxide-semiconductor field effect t (PM2), the 3rd p-type metal-oxide-semiconductor field effect t (PM3), the 4th p-type gold
Belong to oxide field-effect pipe (PM4), the 5th p-type metal-oxide-semiconductor field effect t (PM5), the 6th p-type metal oxygen
Compound field effect transistor (PM6), the 7th p-type metal-oxide-semiconductor field effect t (PM7), the 8th p-type metal-oxide
Field effect transistor (PM8), the 9th p-type metal-oxide-semiconductor field effect t (PM9), the tenth p-type metal oxide field effect
(PM10), the 11st p-type metal-oxide-semiconductor field effect t (PM11), the 12nd p-type metal oxide field should be managed
Effect pipe (PM12), the first N-type metal-oxide-semiconductor field effect t (NM1), the second N-type metal oxide field effect
(NM2), the 3rd N-type metal-oxide-semiconductor field effect t (NM3), the 4th N-type metal oxide field effect should be managed
Pipe (NM4), the 5th N-type metal-oxide-semiconductor field effect t (NM5), the 6th N-type metal-oxide-semiconductor field effect t
(NM6) and resistance (R0) and main trsanscondutance amplifier (Gm),
The source electrode of described first p-type metal-oxide-semiconductor field effect t (PM1), described second p-type metal oxide field effect
The source electrode of (PM2), the source electrode of described 3rd p-type metal-oxide-semiconductor field effect t (PM3), described 4th P should be managed
The source electrode of type metal-oxide-semiconductor field effect t (PM4), described 5th p-type metal-oxide-semiconductor field effect t (PM5)
The source electrode of source electrode and described 6th p-type metal-oxide-semiconductor field effect t (PM6) connects and connects power supply；
The grid of described first p-type metal-oxide-semiconductor field effect t (PM1), described second p-type metal oxide field effect
The grid of (PM2), the grid of described 3rd p-type metal-oxide-semiconductor field effect t (PM3), described 4th P should be managed
The grid of type metal-oxide-semiconductor field effect t (PM4), described 5th p-type metal-oxide-semiconductor field effect t (PM5)
The grid of grid and described 6th p-type metal-oxide-semiconductor field effect t (PM6) connects；
The drain electrode of described first p-type metal-oxide-semiconductor field effect t (PM1), described 7th p-type metal oxide field effect
The source electrode of the source electrode and described 8th p-type metal-oxide-semiconductor field effect t (PM8) that should manage (PM7) connects；
The drain electrode of described second p-type metal-oxide-semiconductor field effect t (PM2) and described 9th p-type metal oxide field effect
The source electrode that should manage (PM9) connects；
The drain electrode of described 3rd p-type metal-oxide-semiconductor field effect t (PM3) connects described main trsanscondutance amplifier (Gm)
In-phase input end and reversed-phase output；
The drain electrode of described 4th p-type metal-oxide-semiconductor field effect t (PM4) connects described tenth p-type metal oxide field
The source electrode of effect pipe (PM10)；
The drain electrode of described 5th p-type metal-oxide-semiconductor field effect t (PM5) connects described 11st p-type metal-oxide
The source electrode of field effect transistor (PM11)；
The drain electrode of described 6th p-type metal-oxide-semiconductor field effect t (PM6), described 6th p-type metal oxide field effect
The source electrode of the grid and described 12nd p-type metal-oxide-semiconductor field effect t (PM12) that should manage (PM6) connects；
The drain electrode of described 7th p-type metal-oxide-semiconductor field effect t (PM7), described first N-type metal oxide field effect
The drain electrode of (NM1), the grid and described second of described first N-type metal-oxide-semiconductor field effect t (NM1) should be managed
The grid of N-type metal-oxide-semiconductor field effect t (NM2) connects；
The grid of described 7th p-type metal-oxide-semiconductor field effect t (PM7) connects described main trsanscondutance amplifier (Gm)
In-phase input end and reversed-phase output；
The drain electrode of described 8th p-type metal-oxide-semiconductor field effect t (PM8) connects described second N-type metal oxide field
The drain electrode of effect pipe (NM2)；
The grid of described 8th p-type metal-oxide-semiconductor field effect t (PM8), described tenth p-type metal oxide field effect
The drain electrode of (PM10) and the connection of one end of resistance (R0) should be managed；
The grid of described 9th p-type metal-oxide-semiconductor field effect t (PM9), described tenth p-type metal oxide field effect
The grid of (PM10), the grid of described 11st p-type metal-oxide-semiconductor field effect t (PM11) and described should be managed
The grid of 12 p-type metal-oxide-semiconductor field effect ts (PM12) connects；
The drain electrode of described 9th p-type metal-oxide-semiconductor field effect t (PM9), described 3rd N-type metal oxide field effect
Should manage the drain electrode of (NM3), the grid of described 3rd N-type metal-oxide-semiconductor field effect t (NM3), the described 4th
The grid of N-type metal-oxide-semiconductor field effect t (NM4) connects；
The drain electrode of described tenth p-type metal-oxide-semiconductor field effect t (PM10) connects described by described resistance (R0)
The drain electrode of the 5th p-type metal-oxide-semiconductor field effect t (PM5) and the 4th p-type metal-oxide-semiconductor field effect t (PM4)
Drain electrode；
The drain electrode of described 11st p-type metal-oxide-semiconductor field effect t (PM11), described 6th N-type metal-oxide
The grid of field effect transistor (NM6), the drain electrode of described 6th N-type metal-oxide-semiconductor field effect t (NM6) and described
The grid of the 5th N-type metal-oxide-semiconductor field effect t (NM5) connects；
The drain electrode of described 12nd p-type metal-oxide-semiconductor field effect t (PM12) connects described reference current source (Iref)
Input；
The drain electrode of described 4th N-type metal-oxide-semiconductor field effect t (NM4), described 5th N-type metal oxide field
The drain electrode of effect pipe (NM5), the inverting input of described main trsanscondutance amplifier (Gm) and described main trsanscondutance amplifier
(Gm) in-phase output end connects；
The source electrode of described first N-type metal-oxide-semiconductor field effect t (NM1), described second N-type metal oxide field
The source electrode of effect pipe (NM2), the source electrode of described 3rd N-type metal-oxide-semiconductor field effect t (NM3), described
The source electrode of four N-type metal-oxide-semiconductor field effect ts (NM4), described 5th N-type metal-oxide-semiconductor field effect t (NM5)
Source electrode, the source electrode of described 6th N-type metal-oxide-semiconductor field effect t (NM6) and described reference current source (Iref)
The equal ground connection of outfan；
The drain electrode of described second N-type metal-oxide-semiconductor field effect t (NM2) connects described main trsanscondutance amplifier (Gm)
Control of Voltage port and Gm-C wave filter in from the Control of Voltage port of trsanscondutance amplifier.
Further, also include RC oscillating circuit, described RC oscillating circuit include the first inverting amplifier (Inv0),
Second inverting amplifier (Inv1), the 3rd inverting amplifier (Inv2), variable capacitance (C0), the first resistance (R1)
With the second resistance (R2), described first inverting amplifier (Inv0), the second inverting amplifier (Inv1) and the 3rd fall
Phase amplifier (Inv2) is the most end to end, described first inverting amplifier (Inv0) and the 3rd inverting amplifier (Inv2)
Between be provided with described first resistance (R1) and the second resistance (R2), described first resistance (R1) and the second resistance (R2)
It is connected in series；One end of described variable capacitance (C0) connects described second inverting amplifier (Inv1) and the 3rd paraphase is put
The junction point of big device (Inv2), the other end of described variable capacitance (C0) connects described first resistance (R1) and second
The junction point of resistance (R2).Use the RC frequency detection circuit of low-power consumption, calibrate wave filter by adjusting capacitance
Time constant.RC oscillating circuit is compared voltage controlled oscillator VCO and be there is not input saturation and stability problem, simultaneously merit
Consuming low, this calibration circuit is highly suitable to be applied in the Gm-C wave filter of low-power consumption, low cost.Can effectively save merit
Consumption, saves circuit structure.
Further, also including Digital Logical Circuits, described RC oscillating circuit connects described Digital Logical Circuits, institute
State trsanscondutance amplifier master & slave control circuit and Digital Logical Circuits connects in described Gm-C wave filter respectively from trsanscondutance amplifier
Control of Voltage port and Capacity control port,
Described Digital Logical Circuits, for detecting the frequency of described RC oscillating circuit and adjusting adjustable electric capacitance, makes oscillation frequency
Rate is stable in fixed range, improvement time constant RC, finally gives described Gm-C filtering by the capacitance after calibration
Device.
Beneficial effect: the host-guest architecture frequency calibration circuit circuit structure for Gm-C wave filter of the present invention is simple, it is provided that
A kind of frequency calibration circuit for Gm-C wave filter.The frequency error of Gm-C wave filter is mainly by trsanscondutance amplifier
Transconductance value and the fabrication error of electric capacity and temperature affect, and the factor of transconductance value Gm affecting trsanscondutance amplifier is a lot, therefore
Need the circuit of a kind of accurate control transconductance value.This calibration circuit employs the master & slave control structure of trsanscondutance amplifier, will be across
The error leading amplifier is changed into the process deviation of resistance, and stability is higher.
Accompanying drawing explanation
Fig. 1 is the host-guest architecture frequency calibration circuit frequency calibration circuit module frame chart for Gm-C wave filter of the present invention；
Fig. 2 is tradition Gm-C filter frequencies calibration circuitry module block diagram based on phaselocked loop；
Fig. 3 is key modules trsanscondutance amplifier master & slave control circuit theory diagrams in the present invention；
Fig. 4 is before and after Gm-C low pass filter calibrates under different process angle after the frequency calibration circuit using the present invention
Amplitude-versus-frequency curve contrasts: M0 is ideal curve, and M1, M2 are respectively under FF, SS process corner the curve before calibration,
M3, M4 are the curve under FF, SS process corner after calibration.
Detailed description of the invention
With detailed description of the invention, the present invention is described in further detail below in conjunction with the accompanying drawings:
Referring to shown in Fig. 1, the host-guest architecture frequency calibration circuit for Gm-C wave filter of the present invention, including mutual conductance
Amplifier master & slave control circuit,
Trsanscondutance amplifier master & slave control circuit includes the first p-type metal-oxide-semiconductor field effect t PM1, the second p-type metal oxygen
Compound field effect transistor PM2, the 3rd p-type metal-oxide-semiconductor field effect t PM3, the 4th p-type metal-oxide-semiconductor field effect t
PM4, the 5th p-type metal-oxide-semiconductor field effect t PM5, the 6th p-type metal-oxide-semiconductor field effect t PM6, the 7th P
Type metal-oxide-semiconductor field effect t PM7, the 8th p-type metal-oxide-semiconductor field effect t PM8, the 9th p-type metal-oxide
Field effect transistor PM9, the tenth p-type metal-oxide-semiconductor field effect t PM10, the 11st p-type metal-oxide-semiconductor field effect t
PM11, the 12nd p-type metal-oxide-semiconductor field effect t PM12, the first N-type metal-oxide-semiconductor field effect t NM1,
Second N-type metal-oxide-semiconductor field effect t NM2, the 3rd N-type metal-oxide-semiconductor field effect t NM3, the 4th N-type gold
Belong to oxide field-effect pipe NM4, the 5th N-type metal-oxide-semiconductor field effect t NM5, the 6th N-type metal oxide field
Effect pipe NM6 and resistance R0 and main trsanscondutance amplifier Gm.
Wherein, the source electrode of the first p-type metal-oxide-semiconductor field effect t PM1, the second p-type metal-oxide-semiconductor field effect t
The source electrode of PM2, the source electrode of the 3rd p-type metal-oxide-semiconductor field effect t PM3, the 4th p-type metal oxide field effect
The source electrode of pipe PM4, the source electrode of the 5th p-type metal-oxide-semiconductor field effect t PM5 and the 6th p-type metal oxide field effect
The source electrode of pipe PM6 should connect and connect power supply.The grid of the first p-type metal-oxide-semiconductor field effect t PM1, the second p-type
The grid of metal-oxide-semiconductor field effect t PM2, the grid of the 3rd p-type metal-oxide-semiconductor field effect t PM3, the 4th P
The grid of type metal-oxide-semiconductor field effect t PM4, the grid and the 6th of the 5th p-type metal-oxide-semiconductor field effect t PM5
The grid of p-type metal-oxide-semiconductor field effect t PM6 connects.The drain electrode of the first p-type metal-oxide-semiconductor field effect t PM1,
The source electrode of the 7th p-type metal-oxide-semiconductor field effect t PM7 and the source electrode of the 8th p-type metal-oxide-semiconductor field effect t PM8
Connect.The drain electrode of the second p-type metal-oxide-semiconductor field effect t PM2 and the 9th p-type metal-oxide-semiconductor field effect t PM9
Source electrode connect.The drain electrode of the 3rd p-type metal-oxide-semiconductor field effect t PM3 connects the homophase of main trsanscondutance amplifier Gm
Input and reversed-phase output.The drain electrode of the 4th p-type metal-oxide-semiconductor field effect t PM4 connects the tenth p-type metal oxygen
The source electrode of compound field effect transistor PM10.The drain electrode of the 5th p-type metal-oxide-semiconductor field effect t PM5 connects the 11st P
The source electrode of type metal-oxide-semiconductor field effect t PM11.The drain electrode of the 6th p-type metal-oxide-semiconductor field effect t PM6, the 6th
The grid of p-type metal-oxide-semiconductor field effect t PM6 and the source electrode of the 12nd p-type metal-oxide-semiconductor field effect t PM12 are even
Connect.The drain electrode of the 7th p-type metal-oxide-semiconductor field effect t PM7, the first N-type metal-oxide-semiconductor field effect t NM1
Drain electrode, the grid of the first N-type metal-oxide-semiconductor field effect t NM1 and the second N-type metal-oxide-semiconductor field effect t NM2
Grid connect.The homophase that the grid of the 7th p-type metal-oxide-semiconductor field effect t PM7 connects trsanscondutance amplifier Gm is defeated
Enter end and reversed-phase output.The drain electrode of the 8th p-type metal-oxide-semiconductor field effect t PM8 connects the second N-type burning
The drain electrode of thing field effect transistor NM2.The grid of the 8th p-type metal-oxide-semiconductor field effect t PM8, the tenth p-type metal oxygen
The drain electrode of compound field effect transistor PM10 and the connection of one end of resistance R0.9th p-type metal-oxide-semiconductor field effect t PM9
Grid, the grid of the tenth p-type metal-oxide-semiconductor field effect t PM10, the 11st p-type metal-oxide-semiconductor field effect t
The grid of PM11 and the grid of the 12nd p-type metal-oxide-semiconductor field effect t PM12 connect.9th p-type burning
The drain electrode of thing field effect transistor PM9, the drain electrode of the 3rd N-type metal-oxide-semiconductor field effect t NM3, the 3rd N-type metal oxygen
The grid of compound field effect transistor NM3, the grid of the 4th N-type metal-oxide-semiconductor field effect t NM4 connect.Tenth P
The drain electrode of type metal-oxide-semiconductor field effect t PM10 connects the 5th p-type metal-oxide-semiconductor field effect t PM5 by resistance R0
Drain electrode and the drain electrode of the 4th p-type metal-oxide-semiconductor field effect t PM4.11st p-type metal-oxide-semiconductor field effect t
The drain electrode of PM11, the grid of the 6th N-type metal-oxide-semiconductor field effect t NM6, the 6th N-type metal oxide field effect
Should the drain electrode of pipe NM6 connect with the grid of the 5th N-type metal-oxide-semiconductor field effect t NM5.12nd p-type metal oxygen
The drain electrode of compound field effect transistor PM12 connects the input of reference current source Iref.4th N-type metal oxide field effect
The drain electrode of pipe NM4, the drain electrode of the 5th N-type metal-oxide-semiconductor field effect t NM5, main trsanscondutance amplifier Gm anti-phase
The in-phase output end of input and main trsanscondutance amplifier Gm connects.
The source electrode of the first N-type metal-oxide-semiconductor field effect t NM1, the second N-type metal-oxide-semiconductor field effect t NM2
Source electrode, the source electrode of the 3rd N-type metal-oxide-semiconductor field effect t NM3, the 4th N-type metal-oxide-semiconductor field effect t
The source electrode of NM4, the source electrode of the 5th N-type metal-oxide-semiconductor field effect t NM5, the 6th N-type metal oxide field effect
The source electrode of pipe NM6 and the equal ground connection of outfan of reference current source Iref.Second N-type metal-oxide-semiconductor field effect t NM2
Drain electrode connect in the Control of Voltage port of main trsanscondutance amplifier Gm and Gm-C wave filter from the voltage control of trsanscondutance amplifier
Port processed.
Also include that RC oscillating circuit, RC oscillating circuit include the first inverting amplifier Inv0, the second inverting amplifier
Inv1, the 3rd inverting amplifier Inv2, variable capacitance C0, the first resistance R1 and the second resistance R2, the first paraphase is amplified
Device Inv0, the second inverting amplifier Inv1 and the 3rd inverting amplifier Inv2 are the most end to end, the first inverting amplifier
The first resistance R1 and the second resistance R2, the first resistance R1 and it is provided with between Inv0 and the 3rd inverting amplifier Inv2
Two resistance R2 are connected in series.One end of variable capacitance C0 connects the second inverting amplifier Inv1 and the 3rd inverting amplifier
The junction point of Inv2, the other end of variable capacitance C0 connects the first resistance R1 and the junction point of the second resistance R2.Use
The RC frequency detection circuit of low-power consumption, calibrates filter time constant by adjusting capacitance.RC oscillating circuit phase
There is not input saturation and stability problem than voltage controlled oscillator VCO, the most low in energy consumption, this calibration circuit is the suitableeest
Close in the Gm-C wave filter being applied to low-power consumption, low cost.Can effectively save power consumption, save circuit structure.
Also including Digital Logical Circuits, RC oscillating circuit connects Digital Logical Circuits, trsanscondutance amplifier master & slave control circuit
Connect respectively in Gm-C wave filter from Control of Voltage port and the Capacity control end of trsanscondutance amplifier with Digital Logical Circuits
Mouthful, Digital Logical Circuits, for detecting the frequency of RC oscillating circuit and adjusting adjustable electric capacitance, makes frequency of oscillation stablize
In fixed range, improvement time constant RC, finally gives Gm-C wave filter by the capacitance after calibration.Digital Logic electricity
Road is functional module common in the art, and the present invention does not makes improvements.
Inventive principle:
The calibration circuit core of the present invention is that trsanscondutance amplifier master & slave control circuit is as it is shown on figure 3, include that main span leads amplification
Device, current source ib, ig, resistance R0 and error amplifier: for ensureing that input and output common mode electrical level is equal, main span is led and is put
Big device is connected into negative feedback type；Current source ibFlow through resistance R0, produce fixed voltage difference V 'p-Vn=ibR, mutual conductance is amplified
Anti-phase input connecting resistance one terminal voltage of device is fixed as Vn, and in-phase input end connects error amplification respectively with the other end of resistance
The input of device, so that the input voltage of trsanscondutance amplifier is equal to voltage difference i at resistance two endsbR.Current source ig is from mutual conductance
The output of amplifier pours into/extracts electric current ig.Owing to the input voltage of trsanscondutance amplifier is fixed with output electric current, its mutual conductance
Value isCurrent source is obtained by reference mirror picture, and its error is the least, and the transconductance value of trsanscondutance amplifier becomes with resistance R
Inverse ratio, its precision is also determined by resistance.
Host-guest architecture controls the trsanscondutance amplifier in Gm-C wave filter so that it is in transconductance value Gm and master & slave control circuit
Resistance R the most inversely (Gm=k1/ R, k1For constant) so that determine that Gm-C filter frequencies is special
The time constant of property (including bandwidth, mid frequency etc.) f is changed into RC by C/Gm, is expressed as by expression formula
f∝Gm/ C=k1/RC.RC oscillating circuit frequency of oscillation f0It is inversely proportional to (f with time constant RC0=k2/ RC),
Wherein resistance R and electric capacity C matches with the electric capacity in the resistance in master & slave control circuit and Gm-C wave filter respectively, because of
The frequency characteristic of this Gm-C wave filter is proportional to the frequency of oscillation i.e. f ∝ f of RC agitator0=k2/RC.Digital Logic electricity
Road is detected the frequency of oscillating circuit and adjusts adjustable electric capacitance, makes frequency of oscillation stable in fixed range, it is achieved the time
The rectification of constant RC, finally gives Gm-C wave filter by the capacitance after calibration, finally achieves Gm-C wave filter
Frequency calibration.
Compared to traditional Gm-C filter frequencies based on phaselocked loop calibration circuit such as Fig. 2, this calibration circuit removes principal and subordinate
Control circuit consumes outside certain quiescent current, and remaining module is digital circuit and only can close after calibration terminates,
Having feature low in energy consumption, RC oscillating circuit is compared voltage controlled oscillator VCO and be there is not input saturation and stability problem,
The most low in energy consumption, this calibration circuit is highly suitable to be applied in the Gm-C wave filter of low-power consumption, low cost.
As shown in Figure 4, after using the frequency calibration circuit of the present invention, Gm-C low pass filter is calibrated under different process angle
Amplitude-versus-frequency curve front and back.Wherein M0 is preferable amplitude-versus-frequency curve, carries a width of 244KHz；M1, M2 are respectively
For the amplitude-frequency characteristic under FF and SS process corner before calibration, bandwidth is respectively 335KHz, 174KHz, and frequency error is near
30%；M3, M4 be respectively under FF and SS process corner calibration after amplitude-frequency characteristic, bandwidth be respectively 250KHz,
237KHz, within frequency error has tapered to 5%, it is seen that the calibration circuit realiration of present invention frequency calibration function.
The present invention, based on this trsanscondutance amplifier master & slave control thought, merges the frequency calibration circuit of active RC filter,
Propose a kind of new host-guest architecture frequency calibration circuit frequency calibration circuit for Gm-C wave filter, circuit structure letter
Single, low in energy consumption, good stability, has really met the feature of the low power consumption and low cost of Gm-C wave filter.
Compared to traditional Gm-C filter frequencies based on phaselocked loop calibration circuit, this calibration circuit is except master & slave control electricity
Road consumes outside certain quiescent current, and remaining module is digital circuit and only can close after calibration terminates, and has power consumption
Low feature, RC oscillating circuit is compared voltage controlled oscillator VCO and be there is not input saturation and stability problem, the most low in energy consumption,
This calibration circuit is highly suitable to be applied in the Gm-C wave filter of low-power consumption, low cost.
Wherein, this calibration circuit comprises trsanscondutance amplifier master & slave control circuit, RC oscillating circuit and Digital Logical Circuits,
Main trsanscondutance amplifier in trsanscondutance amplifier master & slave control circuit and matching from trsanscondutance amplifier in Gm-C wave filter,
Controlled by identical bias voltage；Master & slave control circuit transconductance value Gm of trsanscondutance amplifier is changed into in control circuit
Resistance R inversely, the resistance R in RC oscillating circuit and the resistance R phase in host-guest architecture trsanscondutance amplifier
Joining, the tunable capacitor C in tunable capacitor C and Gm-C wave filter matches；Digital Logical Circuits detection RC agitator
Frequency of oscillation and adjust tunable capacitor C and make frequency of oscillation stable in fixed range, and the stationary value of tunable capacitor is sent
To Gm-C wave filter.This calibration circuit use host-guest architecture control the trsanscondutance amplifier in Gm-C wave filter so that it is
With the resistance R in master & slave control circuit the most inversely, the fabrication error of trsanscondutance amplifier is changed into transconductance value Gm
The fabrication error of resistance R so that determine Gm-C frequency characteristic of filter time constant by C/Gm be changed into
The RC that active RC filter is identical.Resistance R in RC oscillating circuit and electric capacity C respectively with the electricity in master & slave control circuit
Electric capacity in resistance and Gm-C wave filter matches, thus accurately reacts the frequency characteristic of wave filter.Digital Logical Circuits is examined
Survey the output frequency of oscillating circuit and adjust adjustable electric capacitance, finally giving Gm-C wave filter by the capacitance after calibration,
It is achieved thereby that the frequency calibration of Gm-C wave filter.Have compared to the frequency calibration circuit of traditional Gm-C wave filter
Simple in construction, the feature that low in energy consumption, robustness is good.
The host-guest architecture frequency calibration circuit for Gm-C wave filter of the present invention provides a kind of for Gm-C wave filter
Frequency calibration circuit.The frequency error of Gm-C wave filter is mainly missed by the transconductance value of trsanscondutance amplifier and the technique of electric capacity
Difference and temperature affect, and the factor of transconductance value Gm affecting trsanscondutance amplifier is a lot, it is therefore desirable to one accurately controls mutual conductance
The circuit of value.This calibration circuit employs the master & slave control structure of trsanscondutance amplifier, the error of trsanscondutance amplifier is changed
For the process deviation of resistance, stability is higher.
Claims (3)
1. the host-guest architecture frequency calibration circuit for Gm-C wave filter, it is characterised in that include across
Leading amplifier master & slave control circuit, described trsanscondutance amplifier master & slave control circuit includes the first p-type metal-oxide
Field effect transistor (PM1), the second p-type metal-oxide-semiconductor field effect t (PM2), the 3rd p-type burning
Thing field effect transistor (PM3), the 4th p-type metal-oxide-semiconductor field effect t (PM4), the 5th p-type metal oxygen
Compound field effect transistor (PM5), the 6th p-type metal-oxide-semiconductor field effect t (PM6), the 7th p-type metal
Oxide field-effect pipe (PM7), the 8th p-type metal-oxide-semiconductor field effect t (PM8), the 9th p-type gold
Belong to oxide field-effect pipe (PM9), the tenth p-type metal-oxide-semiconductor field effect t (PM10), the 11st
P-type metal-oxide-semiconductor field effect t (PM11), the 12nd p-type metal-oxide-semiconductor field effect t (PM12),
First N-type metal-oxide-semiconductor field effect t (NM1), the second N-type metal-oxide-semiconductor field effect t (NM2),
3rd N-type metal-oxide-semiconductor field effect t (NM3), the 4th N-type metal-oxide-semiconductor field effect t (NM4),
5th N-type metal-oxide-semiconductor field effect t (NM5), the 6th N-type metal-oxide-semiconductor field effect t (NM6)
And resistance (R0) and main trsanscondutance amplifier (Gm)；
The source electrode of described first p-type metal-oxide-semiconductor field effect t (PM1), described second p-type burning
The source electrode of thing field effect transistor (PM2), the source electrode of described 3rd p-type metal-oxide-semiconductor field effect t (PM3),
The source electrode of described 4th p-type metal-oxide-semiconductor field effect t (PM4), described 5th p-type metal oxide field
The source electrode of effect pipe (PM5) and the source electrode of described 6th p-type metal-oxide-semiconductor field effect t (PM6) connect
And connect power supply；
The grid of described first p-type metal-oxide-semiconductor field effect t (PM1), described second p-type burning
The grid of thing field effect transistor (PM2), the grid of described 3rd p-type metal-oxide-semiconductor field effect t (PM3),
The grid of described 4th p-type metal-oxide-semiconductor field effect t (PM4), described 5th p-type metal oxide field
The grid of effect pipe (PM5) and the grid of described 6th p-type metal-oxide-semiconductor field effect t (PM6) connect；
The drain electrode of described first p-type metal-oxide-semiconductor field effect t (PM1), described 7th p-type burning
The source electrode of thing field effect transistor (PM7) and the source electrode of described 8th p-type metal-oxide-semiconductor field effect t (PM8)
Connect；
The drain electrode of described second p-type metal-oxide-semiconductor field effect t (PM2) and described 9th p-type burning
The source electrode of thing field effect transistor (PM9) connects；
The drain electrode of described 3rd p-type metal-oxide-semiconductor field effect t (PM3) connects described main trsanscondutance amplifier
(Gm) in-phase input end and reversed-phase output；
The drain electrode of described 4th p-type metal-oxide-semiconductor field effect t (PM4) connects described tenth p-type metal oxygen
The source electrode of compound field effect transistor (PM10)；
The drain electrode of described 5th p-type metal-oxide-semiconductor field effect t (PM5) connects described 11st p-type metal
The source electrode of oxide field-effect pipe (PM11)；
The drain electrode of described 6th p-type metal-oxide-semiconductor field effect t (PM6), described 6th p-type burning
The grid of thing field effect transistor (PM6) and described 12nd p-type metal-oxide-semiconductor field effect t (PM12)
Source electrode connects；
The drain electrode of described 7th p-type metal-oxide-semiconductor field effect t (PM7), described first N-type metal oxygen
The drain electrode of compound field effect transistor (NM1), described first N-type metal-oxide-semiconductor field effect t (NM1)
The grid of grid and described second N-type metal-oxide-semiconductor field effect t (NM2) connects；
The grid of described in-phase input end the 7th p-type metal-oxide-semiconductor field effect t (PM7) connects described mutual conductance
The in-phase input end of amplifier (Gm) and reversed-phase output；
The drain electrode of described 8th p-type metal-oxide-semiconductor field effect t (PM8) connects described second N-type metal
The drain electrode of oxide field-effect pipe (NM2)；
The grid of described 8th p-type metal-oxide-semiconductor field effect t (PM8), described tenth p-type burning
The drain electrode of thing field effect transistor (PM10) and the connection of one end of resistance (R0)；
The grid of described 9th p-type metal-oxide-semiconductor field effect t (PM9), described tenth p-type burning
The grid of thing field effect transistor (PM10), described 11st p-type metal-oxide-semiconductor field effect t (PM11)
The grid of grid and described 12nd p-type metal-oxide-semiconductor field effect t (PM12) connects；
The drain electrode of described 9th p-type metal-oxide-semiconductor field effect t (PM9), described 3rd N-type metal oxygen
The drain electrode of compound field effect transistor (NM3), described 3rd N-type metal-oxide-semiconductor field effect t (NM3)
Grid, the grid of described 4th N-type metal-oxide-semiconductor field effect t (NM4) connect；
The drain electrode of described tenth p-type metal-oxide-semiconductor field effect t (PM10) is by described resistance (R0) even
Connect drain electrode and the 4th p-type metal oxide field effect of described 5th p-type metal-oxide-semiconductor field effect t (PM5)
The drain electrode of (PM4) should be managed；
The drain electrode of described 11st p-type metal-oxide-semiconductor field effect t (PM11), described 6th N-type metal
The grid of oxide field-effect pipe (NM6), described 6th N-type metal-oxide-semiconductor field effect t (NM6)
Drain electrode and described 5th N-type metal-oxide-semiconductor field effect t (NM5) grid connect；
The drain electrode of described 12nd p-type metal-oxide-semiconductor field effect t (PM12) connects reference current source (Iref)
Input；
The drain electrode of described 4th N-type metal-oxide-semiconductor field effect t (NM4), described 5th N-type metal oxygen
The drain electrode of compound field effect transistor (NM5), the inverting input of described main trsanscondutance amplifier (Gm) and described
The in-phase output end of main trsanscondutance amplifier (Gm) connects；
The source electrode of described first N-type metal-oxide-semiconductor field effect t (NM1), described second N-type metal oxygen
The source electrode of compound field effect transistor (NM2), described 3rd N-type metal-oxide-semiconductor field effect t (NM3)
Source electrode, the source electrode of described 4th N-type metal-oxide-semiconductor field effect t (NM4), described 5th N-type metal
The source electrode of oxide field-effect pipe (NM5), described 6th N-type metal-oxide-semiconductor field effect t (NM6)
Source electrode and the equal ground connection of outfan of described reference current source (Iref)；
The drain electrode of described second N-type metal-oxide-semiconductor field effect t (NM2) connects described main trsanscondutance amplifier
(Gm) from the Control of Voltage port of trsanscondutance amplifier in Control of Voltage port and Gm-C wave filter.
2. the host-guest architecture frequency calibration circuit for Gm-C wave filter as claimed in claim 1, it is special
Levy and be, also include RC oscillating circuit, described RC oscillating circuit include the first inverting amplifier (Inv0),
Second inverting amplifier (Inv1), the 3rd inverting amplifier (Inv2), variable capacitance (C0), the first electricity
Resistance (R1) and the second resistance (R2), described first inverting amplifier (Inv0), the second inverting amplifier
And the 3rd inverting amplifier (Inv2) is the most end to end, described first inverting amplifier (Inv0) (Inv1)
With the 3rd be provided with described first resistance (R1) and the second resistance (R2) between inverting amplifier (Inv2),
Described first resistance (R1) and the second resistance (R2) are connected in series；One end of described variable capacitance (C0)
Connect described second inverting amplifier (Inv1) and the junction point of the 3rd inverting amplifier (Inv2), described can
Power transformation is held the other end of (C0) and is connected described first resistance (R1) and the junction point of the second resistance (R2).
3. the host-guest architecture frequency calibration circuit for Gm-C wave filter as claimed in claim 1, it is special
Levying and be, also include RC oscillating circuit and Digital Logical Circuits, described RC oscillating circuit connects described numeral
Logic circuit, described trsanscondutance amplifier master & slave control circuit and Digital Logical Circuits connect described Gm-C filter respectively
From Control of Voltage port and the Capacity control port of trsanscondutance amplifier in ripple device, described Digital Logical Circuits is used for examining
Survey the frequency of described RC oscillating circuit and adjust adjustable electric capacitance, making frequency of oscillation stable in fixed range,
Improvement time constant RC, finally gives described Gm-C wave filter by the capacitance after calibration.
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| CN201410085525.XA CN103905037B (en) | 2014-03-10 | 2014-03-10 | A kind of host-guest architecture frequency calibration circuit for Gm-C wave filter |
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| US9712125B2 (en) * | 2015-02-15 | 2017-07-18 | Skyworks Solutions, Inc. | Power amplification system with shared common base biasing |
| CN104660216B (en) * | 2015-03-02 | 2017-05-10 | 东南大学 | High-precision frequency calibration circuit for Gm-C filter |
| CN112491369B (en) * | 2020-11-23 | 2021-09-21 | 苏州森斯微电子技术有限公司 | Sensor signal processing circuit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1679234A (en) * | 2002-09-05 | 2005-10-05 | 皇家飞利浦电子股份有限公司 | Self calibration of continuous-time filters and systems comprising such filters |
| CN1725636A (en) * | 2005-02-17 | 2006-01-25 | 威盛电子股份有限公司 | Circuit for tuning conduction capacity time constant |
| CN1972121A (en) * | 2005-11-23 | 2007-05-30 | 联发科技股份有限公司 | Apparatus and method for tuning center frequency of a filter |
| CN101674081A (en) * | 2009-10-15 | 2010-03-17 | 凌阳科技股份有限公司 | Frequency synthesis system with self-corrected loop stability and frequency bandwidth |
| CN202663367U (en) * | 2012-06-26 | 2013-01-09 | 武汉大学 | Self-adaptive tuning system for continuous time filter |
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2014
- 2014-03-10 CN CN201410085525.XA patent/CN103905037B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1679234A (en) * | 2002-09-05 | 2005-10-05 | 皇家飞利浦电子股份有限公司 | Self calibration of continuous-time filters and systems comprising such filters |
| CN1725636A (en) * | 2005-02-17 | 2006-01-25 | 威盛电子股份有限公司 | Circuit for tuning conduction capacity time constant |
| CN1972121A (en) * | 2005-11-23 | 2007-05-30 | 联发科技股份有限公司 | Apparatus and method for tuning center frequency of a filter |
| CN101674081A (en) * | 2009-10-15 | 2010-03-17 | 凌阳科技股份有限公司 | Frequency synthesis system with self-corrected loop stability and frequency bandwidth |
| CN202663367U (en) * | 2012-06-26 | 2013-01-09 | 武汉大学 | Self-adaptive tuning system for continuous time filter |
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