CN104347540A - Circuit module and method of producing circuit module - Google Patents
Circuit module and method of producing circuit module Download PDFInfo
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- CN104347540A CN104347540A CN201410386726.3A CN201410386726A CN104347540A CN 104347540 A CN104347540 A CN 104347540A CN 201410386726 A CN201410386726 A CN 201410386726A CN 104347540 A CN104347540 A CN 104347540A
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- 238000000034 method Methods 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000004806 packaging method and process Methods 0.000 claims description 132
- 239000000463 material Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000007789 sealing Methods 0.000 abstract 7
- 238000010586 diagram Methods 0.000 description 12
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 230000008719 thickening Effects 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 208000034189 Sclerosis Diseases 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 208000032365 Electromagnetic interference Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000036039 immunity Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15158—Shape the die mounting substrate being other than a cuboid
- H01L2924/15159—Side view
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
A circuit module includes a circuit substrate, at least one mount component, sealing bodies, and a shield. The circuit substrate includes a mount surface. The mount component is mounted on the mount surface. The sealing body is formed on the mount surface, covers the mount component and has a first sealing body section having a first thickness and a second sealing body section having a second thickness larger than the first thickness. The shield covers the sealing body and has a first shield section formed on the first sealing body section and having a third thickness and a second shield section formed on the second sealing body section and having a fourth thickness smaller than the third thickness. The sum of the fourth thickness and the second thickness equals to the sum of the first thickness and the third thickness.
Description
Technical field
The present invention relates to the circuit module installing, encapsulate installing component on circuit substrate.
Background technology
Around the installing component be installed on circuit substrate, the circuit module being undertaken encapsulating by the packaging body be made up of synthetic resin etc. is used.In such circuit module, the interference (hereinafter referred to as electromagnetic interference) caused to prevent electromagnetic wave, then adopt electric conductor to cover the surface of packaging body, it can be used as shielding to use.Electromagnetic interference is such as interference or inessential radiation etc.By arranging shielding, the electromagnetic interference (improving Emission) to the electronic equipment outside shielding that the electromagnetic wave that can prevent the installing component in shielding from launching causes, or the electromagnetic interference to the installing component in shielding preventing the electromagnetic wave outside shielding from causing (improving immunity).
Such as, Patent Document 1 discloses following circuit module: utilize the surrounding of insulating resin layer to the electronic unit be arranged on circuit substrate to encapsulate, the surface of insulating resin layer cover by conductive resin layer.The effect of shielding noise is achieved by conductive resin layer.
Patent documentation 1: Japanese Unexamined Patent Publication 2006-286915 publication
Herein, the shield effectiveness of the thicker acquisition of above-mentioned shielding is better.But, when shielding thickening, the problem that the size (particularly thickness) that there is circuit module increases.Particularly in the last few years, the miniaturization of electronic installation is developed, for circuit module, be also required miniaturization (low back).In addition, when shielding thickening, also existing and needing a large amount of shielding materials, increasing the problem of the manufacturing cost of circuit module.
Summary of the invention
In view of situation as above, the object of this invention is to provide and a kind ofly there is high shield effectiveness and be suitable for circuit module and the manufacture method thereof of low back.
In order to achieve the above object, the circuit module involved by a mode of the present invention possesses circuit substrate, installing component, packaging body and shielding.
Foregoing circuit substrate has installed surface.
Above-mentioned installing component is installed on above-mentioned installed surface.
Above-mentioned packaging body is be formed on above-mentioned installed surface, cover the packaging body of above-mentioned installing component, and it has: the first packaging body part, and it has the first thickness; Second packaging body part, it has second thickness larger than above-mentioned first thickness.
Above-mentionedly be shielding for the shielding covering above-mentioned packaging body, it has: the first masked segment, and it to be formed in above-mentioned first packaging body part and to have the 3rd thickness; Second packaging body part, it to be formed in above-mentioned second packaging body part and to have four thickness less than above-mentioned 3rd thickness, and above-mentioned 4th thickness and above-mentioned second thickness sum equal above-mentioned first thickness and above-mentioned 3rd thickness sum.
In order to achieve the above object, the manufacture method of the circuit module involved by a mode of the present invention, is arranged on installing component on the installed surface of circuit substrate.
Above-mentioned installed surface forms packaging body, and above-mentioned packaging body is the packaging body covering above-mentioned installing component, and wherein, above-mentioned packaging body has: the first packaging body part, and it has the first thickness; Second packaging body part, it has second thickness larger than above-mentioned first thickness.
On above-mentioned packaging body, coating shielding material forms the face parallel with above-mentioned installed surface, and then forms shielding.
Accompanying drawing explanation
Fig. 1 is the stereogram of the circuit module involved by embodiments of the present invention.
Fig. 2 is the plane graph of this circuit module.
Fig. 3 is the profile of this circuit module along the A-A line in Fig. 2.
Fig. 4 is the schematic diagram of the configuration of the installing component that this circuit module is shown.
Fig. 5 is the plane graph of the packaging body of this circuit module.
Fig. 6 is the profile of the packaging body of this circuit module along the B-B line in Fig. 5.
Fig. 7 is the schematic diagram of the packaging body thickness that this circuit module is shown.
Fig. 8 is the schematic diagram of the packaging body thickness that this circuit module is shown.
Fig. 9 is the profile of this circuit module of B-B line in Fig. 2.
Figure 10 is the schematic diagram of the shielding thickness that this circuit module is shown.
Figure 11 is the schematic diagram of the manufacture method that this circuit module is shown.
Figure 12 is the schematic diagram of the manufacture method that this circuit module is shown.
Figure 13 is the profile of the circuit module involved by the first variation of the present invention.
Figure 14 is the schematic diagram that the packaging body of circuit module involved by the second variation of the present invention and the thickness of shielding are shown.
The explanation of reference numeral
100: circuit module; 101: circuit substrate; 102: installing component; 102a:RF parts; 102b: the highest installing component; 102R:RF region; 103: packaging body; 103a: the first packaging body part; 103b: the second packaging body part; 104: shielding; 104a: the first masked segment; 104b: secondary shielding part.
Embodiment
Circuit module involved by an embodiment of the invention possesses circuit substrate, installing component, packaging body and shielding.
Foregoing circuit substrate has installed surface.
Above-mentioned installing component is installed on above-mentioned installed surface.
Above-mentioned packaging body be formed on above-mentioned installed surface, the packaging body covered on above-mentioned installing component, it has: the first packaging body part, and it has the first thickness; Second packaging body, it has second thickness larger than above-mentioned first thickness.
Above-mentionedly be shielding for the shielding covering above-mentioned packaging body, it has: the first masked segment, and it to be formed in above-mentioned first packaging body part and to have the 3rd thickness; Secondary shielding part, it to be formed in above-mentioned second packaging body part and to have four thickness less than above-mentioned 3rd thickness, and above-mentioned 4th thickness and above-mentioned second thickness sum equal above-mentioned first thickness and above-mentioned 3rd thickness sum.
According to this structure, by the first masked segment that thickness is thick, for the mounting portion that the shielding necessity in installing component is large, high shield effectiveness can be obtained.At this, if the entirety of shielding is thickening, then the thickness of circuit module becomes large, and then makes circuit module low back become difficulty.To this, according to said structure, because the first masked segment that thickness is large is formed in the first little packaging body part of thickness, therefore under the state of the thickness of holding circuit module, effectively can shield by the installing component high to shielding necessity, namely can be formed and there is high shield effectiveness and the circuit module being suitable for low back.
Above-mentioned installing component comprises the RF parts forming RF (Radio Frequency) circuit, and above-mentioned first packaging body part can cover on above-mentioned RF parts.
The RF circuit used in communication equipment etc. is easily subject to the impact of the electromagnetic interference from circuit module outside, also easily applies electromagnetic interference to circuit module outside.Therefore, protect the necessity of RF circuit high by shielding.According to said structure, the first packaging body part covers on the RF parts of formation RF circuit, namely owing to being configured with the first large masked segment of thickness on RF parts, therefore can produce high shield effectiveness to RF circuit.
Above-mentioned second packaging body part covers the highest installing component of setting height(from bottom) in above-mentioned installing component from above-mentioned installed surface, the setting height(from bottom) of the installing component that the above-mentioned setting height(from bottom) of above-mentioned second Thickness Ratio is the highest is large, above-mentioned first packaging body part does not cover the highest installing component of above-mentioned setting height(from bottom), and the setting height(from bottom) of the installing component that the above-mentioned setting height(from bottom) of above-mentioned first Thickness Ratio is the highest is little.
Owing to being necessary to cover on the highest installing component of setting height(from bottom) (hereinafter referred to as the highest installing component) by the second packaging body part, therefore, the thickness of the second packaging body part must not lower than the setting height(from bottom) of the highest installing component.But the thickness of the first packaging body part can be less than the setting height(from bottom) of the highest installing component.That is, even if when the thickness of circuit module is decided by the setting height(from bottom) of the highest installing component, no matter the setting height(from bottom) of the highest installing component is how many, the thickness (the 3rd thickness) of the first masked segment can both be increased.
Above-mentioned 3rd thickness more than 75 μm less than 200 μm, above-mentioned 4th thickness can more than 1 μm less than 75 μm.
According to this structure, first masked segment with the thickness of more than 75 μm less than 200 μm can produce high shield effectiveness, and the secondary shielding part with the thickness of more than 1 μm less than 75 μm can prevent the increase of the thickness of circuit module.
The manufacture method of the circuit module involved by an embodiment of the invention, is arranged on installing component on the installed surface of circuit substrate.
Above-mentioned installed surface forms packaging body, and above-mentioned packaging body is the packaging body covering above-mentioned installing component, and above-mentioned packaging body has: the first packaging body part, and it has the first thickness; Second packaging body part, it has second thickness larger than above-mentioned first thickness.
Above-mentioned packaging body is coated with shielding material and forms the face parallel with above-mentioned installed surface, and then form shielding.
According to this structure, the thickness (the first thickness) of the first packaging body part and thickness (the 3rd thickness) sum of the first masked segment can equal the thickness (the second thickness) of the second packaging body part and thickness (the 4th thickness) sum of the 4th masked segment, can produce and form the first masked segment in the first packaging body part, the second packaging body part is formed the circuit module of secondary shielding part.
(structure of circuit module)
Fig. 1 is the stereogram of the circuit module 100 involved by present embodiment, and Fig. 2 is the plane graph of circuit module 100.Fig. 3 is the profile of circuit module 100, and it is the profile along A-A line in Fig. 2.In addition, in each figure, X-direction, Y-direction and Z-direction represent mutually orthogonal direction.
As shown in Figure 1 to Figure 3, circuit module 100 possesses circuit substrate 101, installing component 102, packaging body 103 and shielding 104.Size, the shape of circuit module 100 are not specially limited, such as, can be the rectangular shape of length of side tens of milliseconds, thickness several millimeters.
Circuit substrate 101 is the substrates being provided with installing component 102 grade.Circuit substrate 101 can be the multilager base plate be laminated by the layer be made up of insulating material such as expoxy glass class material, insulating ceramic materials, can form distribution in not shown layer in this layer.Below, circuit substrate 101 will be provided with a side of installing component 102 as installed surface 101a.
Installing component 102 is installed in the parts on installed surface 101a.Fig. 4 illustrates the plane graph of the configuration example of installing component 102, wherein eliminates the shielding 104 in Fig. 2 and packaging body 103.Installing component 102 is such as integrated circuit (IC), capacitor, inductance, resistance, crystal oscillator, duplexer, filter, power amplifier etc.Installing component 102 can be installed on installed surface 101a by the welding manner of scolding tin H (with reference to Fig. 3).
Herein, a part for installing component 102 can as the parts forming RF (Radio Frequency) circuit.Below, the installing component 102 of RF circuit will be formed as RF parts 102a.RF parts 102a is such as RFIC (Radio Frequency Integrated Circuit), dc-dc, power amplifier, processor etc.
As shown in Figure 4, RF parts 102a can be arranged on the certain area on circuit substrate 101.Below, the scope of RF parts 102a will be installed as RF region 102R.And RF region 102R can arrange multiple on circuit substrate 101.
Packaging body 103 is made up of encapsulating material, and covers on the installing component 102 on installed surface 101a.Encapsulating material is such as the insulating resin such as epoxy resin that with the addition of silicon dioxide, aluminium oxide.The encapsulating material of flow-like by after installing component 102 is installed on installed surface 101a, can be filled in installing component 102 around, and hardens to encapsulating material and obtain by packaging body 103.Thickness about packaging body 103 will be explained below.
Shielding 104 is made up of the shielding material for electric conducting material, plays the effect as the shielding to electromagnetism interference.Shielding material can be such as the electroconductive resins such as the epoxy resin containing conducting particless such as Ag, Cu.Thickness about shielding 104 will be described later.
Circuit module 100 has above that overall structure.As mentioned above, cover installing component 102 packaging body 103 around be provided with shielding 104, by shielding 104, can prevent to the electromagnetic interference of installing component 102 or by installing component 102 to the electromagnetic interference outside circuit module 100.
(thickness about packaging body and shielding)
Below, the thickness of packaging body 103 is described.Fig. 5 is the plane graph of packaging body 103, wherein eliminates the shielding 104 in Fig. 2.Fig. 6 is the profile of packaging body 103 grade, and it is the profile of the B-B line along Fig. 5.
As shown in figs.5 and 6, packaging body 103 has the first packaging body part 103a and the second packaging body part 103b.First packaging body part 103a is the part that in packaging body 103, thickness is different with the second packaging body part 103b.
Fig. 7 is the schematic diagram of the thickness representing the first packaging body part 103a and the second packaging body part 103b.As shown in the drawing, the thickness of packaging body 103 is the thickness on the surface of playing packaging body 103 from installed surface 101a.Using the thickness of the first packaging body part 103a as thickness D1, during using the thickness of the second packaging body part 103b as thickness D2, thickness D2 is larger than thickness D1.
Herein, as shown in Figure 5, the first packaging body part 103a at least can cover RF region 102R.In addition, the first packaging body part 103a also can cover other regions except the 102R of RF region.
Fig. 8 is the schematic diagram representing the thickness of packaging body 103 and the height relationships of installing component 102.As shown in the drawing, in installing component 102, using installing component the highest for setting height(from bottom) (height from installed surface 101a) as the highest installing component 102b, using the setting height(from bottom) of the highest installing component 102b as height H.First packaging body part 103a does not cover the highest installing component 102b, and the second packaging body part 103b can cover the highest installing component 102b.
As shown in Figure 8, the thickness D2 of the second packaging body part 103b needs at least large than height H, and the highest installing component 102b can not be exposed.On the other hand, because the first packaging body part 103a does not cover the highest installing component 102b, therefore the thickness D1 of the first packaging body part 103a can be less than height H.
Can become the highest installing component 102b, be generally processor or memory, and in most cases, form the RF parts of RF circuit compared with processor or memory, setting height(from bottom) is little.That is, when the first packaging body part 103a covers RF region 102R, the first packaging body part 103a can not cover the highest installing component 102b.
And, as shown in Fig. 6 etc., the part (sloping portion) that the thickness that can arrange packaging body 103 between the first packaging body part 103a and the second packaging body part 103b gradually changes.In addition, the first packaging body part 103a and the second packaging body part 103b adjoins, and namely the first packaging body part 103a and the second packaging body part 103b formation section is poor.
Below, the thickness of shielding 104 is described.Fig. 9 is the profile of circuit module 100, and it is the profile along B-B line in Fig. 2.As shown in the drawing, shield 104 and there is the first masked segment 104a and secondary shielding part 104b.First masked segment 104a and secondary shielding part 104b are the parts that in shielding 104, thickness is different.As shown in Fig. 7 and Fig. 9, the first masked segment 104a is formed on the first packaging body part 103a, and secondary shielding part 104b is formed on the second packaging body part 103b.
Figure 10 is the schematic diagram of the thickness representing the first masked segment 104a and secondary shielding part 104b.As shown in the drawing, the thickness of shielding 104 is the thickness on the surface of playing shielding 104 from the surface of packaging body 103.Using the thickness of the first masked segment 104a as thickness D3, using the thickness of secondary shielding part 104b as thickness D4.Herein, thickness D3 is larger than thickness D4, and the thickness of thickness D3 and thickness D4 can make thickness D1 and thickness D3 sum equal thickness D2 and thickness D4 sum.Accordingly, the surface shielding 104 forms the plane parallel with installed surface 101a.
Specifically, thickness D3 can be more than 75 μm less than 200 μm, and thickness D4 can be more than 1 μm less than 75 μm.And, as shown in Fig. 9 etc., the part that the thickness that can arrange shielding 104 between the first masked segment 104a and secondary shielding part 104b gradually changes.In addition, the first masked segment 104a and secondary shielding part 104b can adjoin.
As mentioned above, because the first masked segment 104a is formed on the first packaging body part 103a, therefore when defining the first packaging body part 103a covering RF region 102R, the first masked segment 104a is formed on the 102R of RF region.
(effect)
Shielding 104 in circuit module 100 plays as the shielding action to electromagnetism interference.Specifically, the outside of circuit module 100 can be prevented the external noise, interference, vulnerability to jamming (Electro Magnetic Compatibility) obstacle etc. of installing component 102 by shielding 104.In addition, installing component 102 also can be prevented to the unnecessary radiation etc. outside circuit module 100 by shielding 104.
At this, the shielding 104 involved by present embodiment, owing to having the first large masked segment 104a of thickness, therefore shield effectiveness as above can produce especially effectively in the first masked segment 104a.
On the other hand, if the thickness in the whole region of shielding 104 is become large, then the thickness of circuit module 100 becomes large, and the miniaturization (low back) like this for circuit module 100 is disadvantageous.To this, the circuit module 100 involved by present embodiment can maintain its thickness, only produces high shield effectiveness in the part of necessity.
Especially, even if when having to the thickness of the second packaging body part 103b to become greatly to cover the highest installing component 102b, the thickness not covering the first packaging body part 103a of the highest installing component 102b also can diminish.Accordingly, can not increase the thickness of circuit module 100, increase the thickness of the first masked segment 104a, the shield effectiveness so brought by the first masked segment 104a is just enough large.
At this, the necessity RF circuit that can be arranged on circuit module 100 being applied to shielding is larger.Such as, if RF circuit is used in the transtation mission circuit of mobile phone, the electric current spilt from RF circuit likely can cause interference to other circuit block (GPS or sensor).In addition, the high frequency radiation forming the oscillator signal of the RFIC inside of RF circuit out, likely causes the equipment being loaded with circuit module 100 not meet EMI (Electro Magnetic Interference) standard.Further, be loaded with the switching noise of the DC/DC transducer of the device interior of circuit module 100, processor switching noise (digital noise) or the disturbing wave to RF circuit may be formed from the transmission ripple of other communication equipments.
Therefore, as mentioned above, by the first masked segment 104a being formed on the RF region 102R of formation RF circuit, can, while the thickness of holding circuit module 100 is constant, carry out concentrating shielding to RF circuit.
Further, shielding 104 is made up of the shielding material containing conducting particles etc., and this material has the heat conductivity higher than the encapsulating material forming packaging body 103.Due to the first masked segment 104a compared with secondary shielding part 104b closer to installed surface 101a, therefore, it is possible to produce high exothermal effect to the installing component 102 be positioned at below the first masked segment 104a.Such as, because general RF circuit is made up of the parts that the heat generation such as RFIC or power amplifier is high, therefore in thermal diffusivity, the structure of present embodiment is also effective.
In addition, by only by thickening for the thickness of a part (the first masked segment 104a) for shielding 104, compared with the situation that the thickness of the entirety by shielding 104 is thickening, the use amount of shielding material can be reduced, suppress the manufacturing cost of circuit module 100.
(manufacture method of circuit module)
Below, the manufacture method of circuit module 100 is described.Figure 11 and Figure 12 is the schematic diagram of the manufacture method of indication circuit module 100.And, by forming multiple circuit module 100 on a circuit substrate simultaneously, then can be divided into the mode of each circuit module 100 to manufacture.
As shown in Figure 11 (a), the circuit substrate 101 being provided with installing component 102 is coated with encapsulating material F.The coating of encapsulating material F can be realized by various coating processes such as spin-coating method, silk screen print method, Vacuum printing methods.
Next, as shown in Figure 11 (b), be coated with mask M encapsulating material F covering there is opening, and then coating encapsulating material F.Accordingly, the encapsulating material F with two stage thickness as shown in Figure 11 (c) is defined.Then, encapsulating material F is made to harden.The sclerosis of encapsulating material F such as can realize by toasting.
Then, as shown in Figure 12 (a), each circuit module 100 carries out hemisection to the encapsulating material F of sclerosis.Hemisection can realize by such as cutting.Accordingly, packaging body 103 is defined.
Next, as shown in Figure 12 (b), packaging body 103 is coated with shielding material S.The coating of shielding material S such as can realize by printing.Herein, the thickness of shielding material S and packaging body 103 has nothing to do, and is formed and is coated with relative to the uniform thickness of installed surface 101a.Then, shielding material S is hardened, the sclerosis of shielding material S such as can realize by toasting.
Then, as shown in Figure 12 (c), shielding material S and circuit substrate 101 cut off (entirely cutting) by each circuit module 100, form shielding 104.This is cut off and such as can be undertaken by cutting.Accordingly, circuit module 100 is as shown in Figure 9 manufactured forms.In addition, the manufacture method of circuit module 100 is not limited to method shown here.
(variation)
Below, the variation of the circuit module 100 involved by present embodiment is described.
(the first variation)
Figure 13 is the profile of the circuit module 100 involved by the first variation.As shown in the drawing, circuit module 100 can have internal shield 105.Internal shield 105 separates installing component 102 and configures, for preventing the electromagnetic interference between installing component 102.Such as, internal shield 105 can configure around the surrounding of above-mentioned RF region 102R.
Internal shield 105 is made up of electric conducting material, is electrically connected with shielding 104.Internal shield 105 forms groove (groove) by adopting laser irradiation etc. on packaging body 103, and on groove, be coated with shielding material, is formed with shielding 104 simultaneously.And internal shield 105 can by being embedded in packaging body 103 times by metallic plate etc. and being formed.
Internal shield 105 being configured around shielding the high region (RF region 102R etc.) of necessity, by forming the first large masked segment 104a of thickness on the area, higher shield effectiveness can be produced to this region.
(the second variation)
Figure 14 is the schematic diagram of the packaging body 103 of the circuit module 100 represented involved by the second variation and the thickness of shielding 104.As shown in the drawing, packaging body 103, except the first packaging body part 103a and the second packaging body part 103b, can also have the 3rd packaging body part 103c.3rd packaging body part 103c can have the thicker thickness (in figure thickness D5) than the second packaging body part 103b.
Shielding 104, except the first masked segment 104a and secondary shielding part 104b, also can have the 3rd masked segment 104c.3rd masked segment 104c is formed on the 3rd packaging body part 103c, and its thickness (in figure thickness D6) and thickness D5 sum can equal thickness D1 and thickness D3 sum (thickness D2 and thickness D4 sum).
Even if in such cases, also can the thickness of holding circuit module 100, only produce high shield effectiveness in the part of necessity.And, in this variation, although packaging body 103 and shielding 104 have the thickness of three phases, also can have multistage thickness further.
Claims (5)
1. a circuit module, this circuit module possesses:
There is the circuit substrate of installed surface;
Be arranged on the installing component on described installed surface;
Packaging body, it is formed on described installed surface, covers the packaging body of described installing component, and described packaging body has:
First packaging body part, it has the first thickness;
Second packaging body part, it has second thickness larger than described first thickness,
Shielding, it is the shielding covering described packaging body, and described shielding has:
First masked segment, it to be formed in described first packaging body part and to have the 3rd thickness;
Secondary shielding part, it to be formed in described second packaging body part and to have four thickness less than described 3rd thickness, and described 4th thickness and described second thickness sum equal described first thickness and described 3rd thickness sum.
2. circuit module according to claim 1, is characterized in that,
Described installing component comprises the RF parts forming RF (Radio Frequency) circuit, and described first packaging body part covers described RF parts.
3. circuit module according to claim 1, is characterized in that,
Described second packaging body part covers the highest installing component of setting height(from bottom) in described installing component from described installed surface, and described in described second Thickness Ratio, the setting height(from bottom) of the installing component that setting height(from bottom) is the highest is large;
Described first packaging body part does not cover the highest installing component of described setting height(from bottom), and described in described first Thickness Ratio, the setting height(from bottom) of the installing component that setting height(from bottom) is the highest is little.
4. circuit module according to claim 1, is characterized in that,
Described 3rd thickness more than 75 μm less than 200 μm, described 4th thickness more than 1 μm less than 75 μm.
5. a manufacture method for circuit module, comprising:
Installing component is arranged on the installed surface of circuit substrate;
Described installed surface forms packaging body, and described packaging body is the packaging body covering described installing component, and wherein, described packaging body has: the first packaging body part, and it has the first thickness; Second packaging body part, it has second thickness larger than described first thickness;
Described packaging body is coated with shielding material and forms the face parallel with described installed surface, and then form shielding.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-165378 | 2013-08-08 | ||
| JP2013165378 | 2013-08-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104347540A true CN104347540A (en) | 2015-02-11 |
| CN104347540B CN104347540B (en) | 2018-12-07 |
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ID=51175775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410386726.3A Active CN104347540B (en) | 2013-08-08 | 2014-08-07 | The manufacturing method of circuit module and circuit module |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8890309B1 (en) |
| JP (1) | JP5527785B1 (en) |
| CN (1) | CN104347540B (en) |
| HK (1) | HK1204390A1 (en) |
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| CN107710901A (en) * | 2015-06-30 | 2018-02-16 | 株式会社村田制作所 | High-frequency model and its manufacture method |
| CN108029226A (en) * | 2015-09-11 | 2018-05-11 | 株式会社村田制作所 | High-frequency model |
| CN109216216A (en) * | 2017-06-29 | 2019-01-15 | 株式会社迪思科 | The manufacturing method of semiconductor packages |
| CN109840238A (en) * | 2017-11-29 | 2019-06-04 | 北京搜狗科技发展有限公司 | A kind of mainboard and translator |
| CN110504249A (en) * | 2018-05-17 | 2019-11-26 | 株式会社东芝 | Circuit device |
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| JP6262776B2 (en) * | 2014-02-04 | 2018-01-17 | 太陽誘電株式会社 | Circuit module |
| USD757538S1 (en) * | 2015-02-17 | 2016-05-31 | Ubotic Company Limited | Sensor housing |
| JP2017076663A (en) * | 2015-10-13 | 2017-04-20 | 日本精工株式会社 | Electronic component mounting board |
| JP6707419B2 (en) * | 2016-08-08 | 2020-06-10 | アルプスアルパイン株式会社 | Circuit module and method of manufacturing circuit module |
| JP6705509B2 (en) * | 2016-10-25 | 2020-06-03 | 株式会社村田製作所 | Circuit module |
| CN109716646A (en) | 2016-11-24 | 2019-05-03 | 株式会社大真空 | Piezodectric vibration device and the SIP module for having it |
| JP2021158202A (en) * | 2020-03-26 | 2021-10-07 | シャープ株式会社 | Shield structure and electronic device |
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Also Published As
| Publication number | Publication date |
|---|---|
| US20150044822A1 (en) | 2015-02-12 |
| CN104347540B (en) | 2018-12-07 |
| US8890309B1 (en) | 2014-11-18 |
| HK1204390A1 (en) | 2015-12-18 |
| JP5527785B1 (en) | 2014-06-25 |
| JP2015053297A (en) | 2015-03-19 |
| US9018039B2 (en) | 2015-04-28 |
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