JP2012015548A - High frequency module having shielding and heat-dissipating properties, and method of manufacturing the same - Google Patents

High frequency module having shielding and heat-dissipating properties, and method of manufacturing the same Download PDF

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JP2012015548A
JP2012015548A JP2011220028A JP2011220028A JP2012015548A JP 2012015548 A JP2012015548 A JP 2012015548A JP 2011220028 A JP2011220028 A JP 2011220028A JP 2011220028 A JP2011220028 A JP 2011220028A JP 2012015548 A JP2012015548 A JP 2012015548A
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thermosetting resin
resin
parts
curing agent
conductive
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Kenichiro Sugimoto
健一朗 杉本
Hisatoshi Murakami
久敏 村上
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Tatsuta Electric Wire and Cable Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/19015—Structure including thin film passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

PROBLEM TO BE SOLVED: To provide a high frequency module excellent in shielding property and heat-dissipating property, easy to be miniaturized and thinned, and inexpensively manufacturable, and a method of manufacturing the same.SOLUTION: A conductive resin layer having a shielding layer with a thickness of 20 μm or thicker is used. The conductive resin layer covers a resin mold, and the lower end thereof is connected to a ground pattern. Conductive paste forming the conductive resin layer contains metal powder selected from a group consisting of silver, copper, and silver coated copper powder, a thermosetting resin, and an imidazole-based hardening agent. The compound ratio of the metal powder and the thermosetting resin is 500-1,000 weight parts of metal powder to 100 weight parts of the thermosetting resin, and the compound ratio of the imidazole-based hardening agent and the thermosetting resin is 3-20 weight parts of the imidazole-based hardening agent to 100 weight parts of the thermosetting resin. The volume resistivity of the conductive resin layer is 1×10Ωcm or less, heat conductivity is 5 W/mK or higher, and shielding property for electromagnetically shielding spurious radiation radiated from an electronic component and heat-dissipating property are given to the conductive resin layer.

Description

本発明は、通信機器、情報機器等に用いられる高周波モジュールに関し、特に携帯機器の送信用電力増幅器等のように小型で安価であることが要求される高周波モジュール及びその製造方法に関するものである。   The present invention relates to a high-frequency module used in communication equipment, information equipment, and the like, and more particularly to a high-frequency module that is required to be small and inexpensive, such as a transmission power amplifier for portable equipment, and a method for manufacturing the same.

従来、この種の高周波モジュールには、実装基板への放熱効率や電磁シールド性の良好さと小型化が求められてきた。特開平１０−１２５８３０には、半導体素子や受動部品を実装し、前記半導体素子を覆うように導電性熱導電性材料を介して接続した導電性熱導電材料からなるシールドキャップを備え、導電性熱伝導材料によって、グランド層に接続した高周波モジュールが開示されている。半導体素子からの熱は、導電性熱伝導材料を介してシールドキャップから回路実装基板へ伝導され、また、半導体素子や受動部品は、キャップによって覆われるので、遮蔽される。
しかし、キャップは、金属製であるため、小型化薄型化には限界があった。 Conventionally, this type of high-frequency module has been required to have good heat dissipation efficiency to the mounting substrate and good electromagnetic shielding properties and downsizing. Japanese Patent Application Laid-Open No. 10-125830 includes a shield cap made of a conductive thermal conductive material on which a semiconductor element or passive component is mounted and connected via a conductive thermal conductive material so as to cover the semiconductor element. A high frequency module connected to a ground layer by a conductive material is disclosed. The heat from the semiconductor element is conducted from the shield cap to the circuit mounting substrate through the conductive heat conductive material, and the semiconductor element and the passive component are covered with the cap and thus shielded.
However, since the cap is made of metal, there is a limit to downsizing and thinning.

また、特開２００５−２５１８２７には、電子部品を実装した回路ブロックが形成された回路基板と、この回路基板の各回路ブロック毎に樹脂で一体に被覆した封止体と、この封止体の外表面に形成されたシールド用の金属層からなり、この金属層を金属粉と熱硬化性樹脂からなる導電性樹脂を介して、回路基板用に形成されたグランド電極に接続されたモジュール部品が開示されている。
これによれば、シールド用金属層は５〜１５μmとなり、金属キャップより厚みを薄くすることが可能となる。しかし、この金属層は、無電解めっきと電気めっきにより厚み５〜１５μｍのCu導体からなるものであり、薄厚に形成できるが、めっき工程によるため手間がかかり、高価になる。 Japanese Patent Laid-Open No. 2005-251827 discloses a circuit board on which a circuit block on which an electronic component is mounted is formed, a sealing body integrally covered with a resin for each circuit block of the circuit board, A module component is formed of a shielding metal layer formed on the outer surface, and this metal layer is connected to a ground electrode formed for a circuit board through a conductive resin made of metal powder and a thermosetting resin. It is disclosed.
According to this, the shielding metal layer has a thickness of 5 to 15 μm and can be made thinner than the metal cap. However, this metal layer is made of a Cu conductor having a thickness of 5 to 15 μm by electroless plating and electroplating, and can be formed thin. However, it is troublesome and expensive due to the plating process.

特開平１０−１２５８３０JP-A-10-125830 特開２００５−２５１８２７JP 2005-251827 A

本発明は、上記問題点を解消するためになされたもので、シールド性と、放熱性がよく、しかも小型化・薄型化が容易で、安価に製造できる高周波モジュール及びその製造方法を提供することを課題とする。   The present invention has been made to solve the above-described problems, and provides a high-frequency module that has good shielding properties and heat dissipation, and that can be easily reduced in size and thickness, and can be manufactured at low cost, and a method for manufacturing the same. Is an issue.

課題を解決するための手段及び発明の効果Means for Solving the Problems and Effects of the Invention

上記課題を解決するため、請求項１のシールド及び放熱性を有する高周波モジュールは、
基板の主面上に配線及びグランドパターンを含む回路パターン及び電子部品を配し、その上に樹脂モールド及びシールド層を設け、裏面には、主面上の電子部品から基板を通して設けた外部入出力用端子を有する高周波モジュールにおいて、
前記シールド層は、厚みが２０μｍ以上の導電性樹脂層からなり、
前記導電性樹脂層は、前記樹脂モールドを覆い、その下端は前記グランドパターンに接続してなり、
前記導電性樹脂層を形成する導電性ペーストは、金属粉と熱硬化性樹脂と前記熱硬化性樹脂の硬化剤を含有し、
前記金属粉は、銀、銅、銀コート銅粉からなる群から選択された１種類又は２種類以上からなり、
前記熱硬化性樹脂は、エポキシ樹脂からなり、
前記熱硬化性樹脂の硬化剤には、イミダゾール系硬化剤が使用され、
前記金属粉と前記熱硬化性樹脂との配合比率は、熱硬化性樹脂１００重量部に対して金属粉５００〜１０００重量部とし、
前記イミダゾール系硬化剤と前記熱硬化性樹脂との配合比率は、熱硬化性樹脂１００重量部に対してイミダゾール系硬化剤３〜２０重量部として、
前記導電性樹脂層の体積抵抗率が１×１０-4Ω・ｃｍ以下、熱伝導率が５Ｗ／ｍ・Ｋ以上の高導電性、高熱伝導性を有し、低インピーダンスで前記グランドパターンに接続され、前記電子部品から放射される不要輻射を電磁シールドするシールド性及び放熱性を有することを特徴とする。 In order to solve the above-mentioned problem, a high-frequency module having a shield and heat dissipation according to claim 1 is provided.
A circuit pattern and electronic parts including wiring and ground patterns are arranged on the main surface of the board, a resin mold and a shield layer are provided on the circuit pattern, and an external input / output provided on the back surface from the electronic parts on the main surface through the board In a high frequency module having a terminal for
The shield layer is made of a conductive resin layer having a thickness of 20 μm or more,
The conductive resin layer covers the resin mold, and its lower end is connected to the ground pattern,
The conductive paste that forms the conductive resin layer contains metal powder, a thermosetting resin, and a curing agent for the thermosetting resin,
The metal powder is composed of one or more kinds selected from the group consisting of silver, copper, and silver-coated copper powder,
The thermosetting resin is made of an epoxy resin,
As the curing agent for the thermosetting resin, an imidazole-based curing agent is used,
The blending ratio of the metal powder and the thermosetting resin is 500 to 1000 parts by weight of the metal powder with respect to 100 parts by weight of the thermosetting resin.
The blending ratio of the imidazole curing agent and the thermosetting resin is 3 to 20 parts by weight of an imidazole curing agent with respect to 100 parts by weight of the thermosetting resin.
The conductive resin layer has a volume resistivity of 1 × 10 −4 Ω · cm or less, a thermal conductivity of 5 W / m · K or more, high conductivity and high thermal conductivity, and is connected to the ground pattern with low impedance. And having shielding properties and heat dissipation properties for electromagnetically shielding unnecessary radiation radiated from the electronic component.

このシールド及び放熱性を有する高周波モジュールによると、シールド層が従来のメタルキャップに比して厚さを薄くできるので、それを用いる装置全体のスペースを軽減することができ、また、半導体素子等から発生する熱の放散が良くなるので、電子部品等の寿命が長くなる。
また、このシールド及び放熱性を有する高周波モジュールによると、シールド性と放熱性のさらに優れた高周波モジュールが得られる。 According to the shield and the high-frequency module having heat dissipation, the shield layer can be made thinner than a conventional metal cap, so that the space of the entire device using the shield layer can be reduced. Since the dissipation of the generated heat is improved, the life of the electronic component or the like is extended.
Further, according to the high frequency module having the shield and heat dissipation, a high frequency module having further excellent shielding properties and heat dissipation can be obtained.

請求項２のシールド及び放熱性を有する高周波モジュールの製造方法は、
所定数の単位区画を有する大面積基板の主面上の各単位区画内に所定の配線及びグランドパターンを含む回路パターン及び電子部品を配設する回路形成工程と、
前記主面上の各単位区画間端に設けられ、グランドパターンを配設されたダイシング部を除いて、樹脂モールドを施すモールド工程と、
前記樹脂モールド上に厚みが２０μｍ以上の導電性ペーストを印刷して導電性樹脂層を形成する印刷工程と、
前記ダイシング部で各単位区画に切り分けるダイシング工程とを有し、
前記印刷工程において、
前記導電性ペーストは、金属粉と熱硬化性樹脂と前記熱硬化性樹脂の硬化剤を含有し、
前記金属粉は、銀、銅、銀コート銅粉からなる群から選択された１種類又は２種類以上からなり、
前記熱硬化性樹脂は、エポキシ樹脂からなり、
前記熱硬化性樹脂の硬化剤には、イミダゾール系硬化剤が使用され、
前記金属粉と前記熱硬化性樹脂との配合比率は、熱硬化性樹脂１００重量部に対して金属粉５００〜１０００重量部とし、
前記イミダゾール系硬化剤と前記熱硬化性樹脂との配合比率は、熱硬化性樹脂１００重量部に対してイミダゾール系硬化剤３〜２０重量部として、
前記導電性樹脂層の体積抵抗率が１×１０-4Ω・ｃｍ以下、熱伝導率が５Ｗ／ｍ・Ｋ以上の高導電性、高熱伝導性を有し、低インピーダンスで前記グランドパターンに接続され、前記電子部品から放射される不要輻射を電磁シールドし、
前記導電性ペーストが各単位区画の樹脂モールド間に充填され、加熱硬化されて、各単位区画端のダイシング部に露出したグランドパターンに接続され、樹脂モールドを覆うように印刷され、
前記ダイシング工程は、前記樹脂モールド間に充填された導電性樹脂層とそれに接続されたグランドパターンからなるダイシング部で所定数の単位区画に切り分けることを特徴とする。 The manufacturing method of the high frequency module which has the shield of Claim 2, and heat dissipation is as follows.
A circuit forming step of disposing a circuit pattern and an electronic component including a predetermined wiring and a ground pattern in each unit section on the main surface of a large area substrate having a predetermined number of unit sections;
A molding step for applying a resin mold, except for a dicing portion provided at an end of each unit partition on the main surface and provided with a ground pattern;
A printing step of forming a conductive resin layer by printing a conductive paste having a thickness of 20 μm or more on the resin mold;
A dicing step of dividing into each unit section in the dicing unit,
In the printing process,
The conductive paste contains a metal powder, a thermosetting resin, and a curing agent for the thermosetting resin,
The metal powder is composed of one or more kinds selected from the group consisting of silver, copper, and silver-coated copper powder,
The thermosetting resin is made of an epoxy resin,
As the curing agent for the thermosetting resin, an imidazole-based curing agent is used,
The blending ratio of the metal powder and the thermosetting resin is 500 to 1000 parts by weight of the metal powder with respect to 100 parts by weight of the thermosetting resin.
The blending ratio of the imidazole curing agent and the thermosetting resin is 3 to 20 parts by weight of an imidazole curing agent with respect to 100 parts by weight of the thermosetting resin.
The conductive resin layer has a volume resistivity of 1 × 10 −4 Ω · cm or less, a thermal conductivity of 5 W / m · K or more, high conductivity and high thermal conductivity, and is connected to the ground pattern with low impedance. And electromagnetically shield unwanted radiation emitted from the electronic component,
The conductive paste is filled between the resin molds of each unit section, heated and cured, connected to the ground pattern exposed at the dicing portion at the end of each unit section, and printed to cover the resin mold,
The dicing process is characterized in that a predetermined number of unit sections are divided by a dicing portion including a conductive resin layer filled between the resin molds and a ground pattern connected thereto.

このシールド及び放熱性を有する高周波モジュールの製造方法によると、大面積基板上に多数の単位高周波モジュールを一括して形成できるので、生産効率が良く単価が安くなる。   According to this method of manufacturing a high-frequency module having shielding and heat dissipation, a large number of unit high-frequency modules can be collectively formed on a large-area substrate, resulting in high production efficiency and low unit cost.

本発明のシールド及び放熱性を有する高周波モジュールの構成の概要を示す説明図である。It is explanatory drawing which shows the outline | summary of a structure of the high frequency module which has the shield of this invention, and heat dissipation. 本発明のシールド及び放熱性を有する高周波モジュールの製造方法における回路形成工程の説明図である。It is explanatory drawing of the circuit formation process in the manufacturing method of the high frequency module which has a shield and heat dissipation of this invention. 本発明のシールド及び放熱性を有する高周波モジュールの製造方法におけるモールド工程の説明図である。It is explanatory drawing of the molding process in the manufacturing method of the high frequency module which has the shield and heat dissipation of this invention. 本発明のシールド及び放熱性を有する高周波モジュールの製造方法における印刷工程とダイシング工程の説明図である。It is explanatory drawing of the printing process and the dicing process in the manufacturing method of the high frequency module which has a shield and heat dissipation of this invention.

以下、本発明の実施形態を図面に基づいて説明する。
図１は、本発明のシールド及び放熱性を有する高周波モジュール１の模式図、図２乃至４はシールド及び放熱性を有する高周波モジュールの製造方法の説明図である。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic view of a high-frequency module 1 having a shield and heat dissipation according to the present invention, and FIGS. 2 to 4 are explanatory views of a method for manufacturing a high-frequency module having a shield and heat dissipation.

先ず、シールド及び放熱性を有する高周波モジュール１の構造の概要を説明する。
図１において、高周波モジュール１は、基板２の主面２a上にグランドパターン３ａや図示しない信号線などの配線を含む回路パターン３及び集積回路チップ５やコンデンサー、インダクタンスなどの受動部品６（６ａ、６ｂ，６ｃ）などを含む電子部品４で高周波回路が形成されている。また、その上には、これらの電子部品４を封入する樹脂モールド７が施されている。さらに、８は、その上を覆うシールド層であり、下端はグランドパターン３ａに接続されている。 First, an outline of the structure of the high-frequency module 1 having a shield and heat dissipation will be described.
In FIG. 1, a high-frequency module 1 includes a circuit pattern 3 including a ground pattern 3a and a signal line (not shown) on a main surface 2a of a substrate 2, and passive components 6 (6a, 6a, A high frequency circuit is formed by the electronic component 4 including 6b, 6c). Further, a resin mold 7 for encapsulating these electronic components 4 is provided thereon. Further, 8 is a shield layer covering the upper side, and the lower end is connected to the ground pattern 3a.

シールド層８は、導電性樹脂からなり、体積抵抗率が１×１０-4 Ω・ｃｍ以下の高導電性であるから、電子部品４から放射される不要輻射は、低インピーダンスでグランドパターン３ａに接続されるため電磁シールド効果も大きい。
また、熱伝導率が５Ｗ／ｍ・Ｋ以上の高熱伝導性を有するものであるから、集積回路チップ５などからの発熱を樹脂モールドと、シールド層を介してグランドパターン３ａに効率よく伝導し、放熱する。 Since the shield layer 8 is made of a conductive resin and has a high conductivity with a volume resistivity of 1 × 10 −4 Ω · cm or less, unnecessary radiation radiated from the electronic component 4 is applied to the ground pattern 3a with a low impedance. Because it is connected, the electromagnetic shielding effect is also great.
Further, since it has a high thermal conductivity of 5 W / m · K or more, heat from the integrated circuit chip 5 and the like is efficiently conducted to the ground pattern 3a through the resin mold and the shield layer, Dissipate heat.

このようなシールド層を形成するための導電性ペーストの配合例は以下のとおりである。熱硬化性樹脂としては、エポキシ樹脂、フェノール樹脂、アルキッド樹脂、メラミン樹脂、アクリレート樹脂、シリコーン樹脂のうちから選択される１種又は２種以上をブレンドして好適に用いられる。このなかでも、耐熱性、密着性の点からエポキシ樹脂が好ましい。   A blending example of the conductive paste for forming such a shield layer is as follows. As the thermosetting resin, one or two or more selected from an epoxy resin, a phenol resin, an alkyd resin, a melamine resin, an acrylate resin, and a silicone resin are blended and used suitably. Among these, an epoxy resin is preferable from the viewpoint of heat resistance and adhesion.

金属フィラーとしては、銀粉、銅粉、銀コート銅粉、ニッケル粉等の金属粉が用いられる。中でも銀粉、銅粉、銀コート銅粉が好ましい。
金属フィラーの形状には、特に制限が無いが、樹脂状球状、りん片状等が例示される。また、粒径は１〜５０μｍが好ましく、２〜１６μｍがより好ましい。
金属フィラーは１種のみもちい２種以上混合してもよい。 As the metal filler, metal powder such as silver powder, copper powder, silver-coated copper powder and nickel powder is used. Of these, silver powder, copper powder, and silver-coated copper powder are preferable.
Although there is no restriction | limiting in particular in the shape of a metal filler, Resin-like spherical shape, scale shape, etc. are illustrated. Moreover, 1-50 micrometers is preferable and a particle size is more preferable 2-16 micrometers.
Two or more kinds of metal fillers may be mixed.

上記金属フィラーは、熱硬化性樹脂１００重量部に対して４００〜１３００重量部、より好ましくは５００〜１０００重量部配合する。４００重量部未満の場合、熱伝導率が低くなり、１３００重量部を超えると増粘により作業性が低下する場合がある。   The metal filler is blended in an amount of 400 to 1300 parts by weight, more preferably 500 to 1000 parts by weight with respect to 100 parts by weight of the thermosetting resin. When the amount is less than 400 parts by weight, the thermal conductivity is low, and when it exceeds 1300 parts by weight, workability may be reduced due to thickening.

本発明で用いるエポキシ樹脂の硬化剤としては、イミダゾール系硬化剤が好ましい。
イミダゾール系硬化剤の例としては、イミダゾール、２-ウンデシルイミダゾール、２-ヘプタデシルイミダゾール、２-エチルイミダゾール、２-フェニルイミダゾール、２-エチル-４-メチルイミダゾール、１-シアノエチル-２-ウンデシルイミダゾール、２-フェニルイミダゾール、２，４-ジアミノ-６-［２’-メチルイミダゾーリル-(１’)-エチル-Ｓ-トリアジンが挙げられる。 As the curing agent for the epoxy resin used in the present invention, an imidazole curing agent is preferable.
Examples of imidazole curing agents include imidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-ethylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, 1-cyanoethyl-2-undecyl. Examples include imidazole, 2-phenylimidazole, and 2,4-diamino-6- [2′-methylimidazolyl- (1 ′)-ethyl-S-triazine.

イミダゾール系硬化剤は、エポキシ樹脂１００重量部に対して好ましくは１．５〜４０重量部、より好ましくは３〜２０重量部配合する。添加部数が１．５重量部より少ない場合は硬化が不十分となり、４０重量部を越えると経時による増粘の程度が大きく、印刷性の低下を生じる。また、保管中にペーストが増粘して作業性が悪化するようになる。   The imidazole curing agent is preferably blended in an amount of 1.5 to 40 parts by weight, more preferably 3 to 20 parts by weight, based on 100 parts by weight of the epoxy resin. When the number of added parts is less than 1.5 parts by weight, the curing is insufficient, and when it exceeds 40 parts by weight, the degree of thickening with time is large and the printability is lowered. In addition, the paste becomes thicker during storage and the workability deteriorates.

基板２の裏面２ａには、主面上の電子部品４から基板２を通して設けた図示しない外部入出力用端子が設けられており、その先端には半田ボール９が形成されている。   On the back surface 2a of the substrate 2, an external input / output terminal (not shown) provided from the electronic component 4 on the main surface through the substrate 2 is provided, and a solder ball 9 is formed at the tip thereof.

この高周波モジュールによると、導電性ペーストによるシールド層の厚みを
最小２０μｍとすることができるので、シールド層が特開平１０−１２５８３０のメタルキャップに比べて厚さを薄くできる。また、導電性樹脂層自体を接着性樹脂で形成すれば、メタルキャップや金属メッキ層のようにグランドパターンとの接着剤を別に設ける必要もない。
一方、特開２００５−２５１８２７のように金属メッキによるもので薄くすることはできるが、メッキに手間がかかり、高価になるのに対し本発明品では後述するように簡単に製造でき、安価に形成できる。また、半導体素子等から発生する熱の放散が良くなるので、電子部品等の寿命が長くなる。 According to this high-frequency module, the thickness of the shield layer made of the conductive paste can be set to a minimum of 20 μm, so that the shield layer can be made thinner than the metal cap disclosed in Japanese Patent Laid-Open No. 10-125830. In addition, if the conductive resin layer itself is formed of an adhesive resin, it is not necessary to separately provide an adhesive with the ground pattern like a metal cap or a metal plating layer.
On the other hand, it can be thinned by metal plating as disclosed in Japanese Patent Application Laid-Open No. 2005-251827. However, it takes time and effort to plating, whereas the product of the present invention can be easily manufactured and formed at a low cost as described later. it can. In addition, since heat dissipation from the semiconductor element and the like is improved, the life of the electronic component and the like is extended.

次に、このシールド及び放熱性を有する高周波モジュールの製造方法を図２乃至図４に基づいて説明する。
図２は、回路形成工程の説明図であり、図２（ａ）は正面図、図２（ｂ）は平面図である。
所定数（ここでは、簡単のため４区画とする）の単位区画を有する大面積基板１２の主面上の各単位区画１１（１１ａ、１１ｂ、１１ｃ、１１ｄ）内に、所定のグランドパターン３ａや図示しない信号線などを含む回路パターン３を形成し、その上の所定位置に各電子部品４を表面実装する。
次いで、大面積基板１２の図示しないスルーホールを通して裏面に露出する電子部品４の外部入出力端子の先端に、公知の方法で半田ボール９を形成する。
大面積基板１２が多層の場合には、最上層の基板上に所定のグランドパターン３aを形成しても良いし、多層部分の内層に形成おされたグランドパターンがあるところまで、ダイシング装置で切削し、切削部に導電性ペーストを印刷して、該グランドパターン端面とシールド層とを接続してもよい。 Next, a method for manufacturing the shield and the high-frequency module having heat dissipation will be described with reference to FIGS.
2A and 2B are explanatory diagrams of a circuit forming process, in which FIG. 2A is a front view and FIG. 2B is a plan view.
In each unit section 11 (11a, 11b, 11c, 11d) on the main surface of the large area substrate 12 having a predetermined number (here, four sections for simplicity), a predetermined ground pattern 3a or A circuit pattern 3 including a signal line (not shown) is formed, and each electronic component 4 is surface-mounted at a predetermined position thereon.
Next, a solder ball 9 is formed by a known method at the tip of the external input / output terminal of the electronic component 4 exposed on the back surface through a through hole (not shown) of the large area substrate 12.
When the large-area substrate 12 is a multilayer, a predetermined ground pattern 3a may be formed on the uppermost substrate, or cutting is performed with a dicing apparatus until there is a ground pattern formed on the inner layer of the multilayer portion. Then, a conductive paste may be printed on the cutting part to connect the end face of the ground pattern and the shield layer.

図３は、樹脂モールドを施すモールド工程の説明図であり、図３（ａ）は正面図、図３（ｂ）は平面図である。
前記主面上の各単位区画１１ａ、１１ｂ、１１ｃ、１１ｄ間及び周縁のグランドパターン３ａ上に、各単位区画をかたどる型枠を設け、電子部品４上を覆うように、例えばエポキシ系樹脂を流し込み、放置して硬化させ、樹脂モールド７を形成する。 3A and 3B are explanatory diagrams of a molding process for applying a resin mold, in which FIG. 3A is a front view and FIG. 3B is a plan view.
For example, an epoxy resin is poured to cover the electronic component 4 so as to cover the electronic component 4 between the unit sections 11a, 11b, 11c, and 11d on the main surface and on the ground pattern 3a on the peripheral edge. The resin mold 7 is formed by leaving it to cure.

図４は、前記樹脂モールド７上に導電性ペーストを印刷して、シールド層８を形成する印刷工程と、最後に単位区画ごとに切り離して、高周波モジュール１とするダイシング工程の説明図であり、図４（ａ）は正面図、図４（ｂ）は平面図である。
導電性ペーストは、樹脂モールド表層と溝部にコーティングする必要があるが、一般のスクリーン印刷により形成することができる。実際の印刷は、１回の印刷で樹脂モールドすることも可能であるが、予め溝部だけを埋めておいて、次に表層部全体をコーティング印刷する２段階印刷により形成することも可能である。 FIG. 4 is an explanatory diagram of a printing process in which a conductive paste is printed on the resin mold 7 to form the shield layer 8, and finally a dicing process in which each unit section is separated into the high-frequency module 1. 4A is a front view, and FIG. 4B is a plan view.
The conductive paste needs to be coated on the resin mold surface layer and the groove, but can be formed by general screen printing. Actual printing can be resin-molded by one printing, but can also be formed by two-step printing in which only the groove portion is filled in advance and then the entire surface layer portion is coated and printed.

更には、溝部に発生しやすいボイドを回避するには、真空印刷機を用いることも有効な手段である。このように、汎用技術であるスクリーン印刷法により、容易にシールド層８が形成される。次に、印刷された導電性ペーストを加熱硬化させると、図４（ａ）に示すようにグランドパターン３ａに電気的に接続された導電性ペーストによるシールド層８が形成される。   Furthermore, using a vacuum printer is also an effective means for avoiding voids that are likely to occur in the groove. Thus, the shield layer 8 is easily formed by the screen printing method which is a general-purpose technique. Next, when the printed conductive paste is heated and cured, a shield layer 8 made of the conductive paste electrically connected to the ground pattern 3a is formed as shown in FIG.

シールド層８を形成した大面積基板を基台から取り出して、ダイシング装置を用い、図４（ｂ）に示す、上記各単位区画１１ａ、１１ｂ、１１ｃ、１１ｄ間のダイシング部１３で切り分けることで、図１に示すように、モジュールの表面だけでなく、側面までシールド層である導電性樹脂層に覆われた示す高周波モジュール１が完成する。   By taking out the large-area substrate on which the shield layer 8 is formed from the base and using a dicing apparatus, the dicing unit 13 shown in FIG. As shown in FIG. 1, not only the surface of the module but also the side surface of the high frequency module 1 covered with a conductive resin layer as a shield layer is completed.

上記のようにシールド層８の形成には、一般のスクリーン印刷により容易に形成することができるため、金属キャップによる部品の嵩高問題、金属メッキによるコスト高問題の両方を改善でき、容易に且つ安価に、シールド及び放熱性を有する高周波モジュールを製造することができる。 As described above, since the shield layer 8 can be easily formed by general screen printing, it is possible to improve both the bulk problem of parts due to the metal cap and the high cost problem due to metal plating, and it is easy and inexpensive. In addition, a high-frequency module having a shield and heat dissipation can be manufactured.

１ シールド及び放熱性を有する高周波モジュール
２ 基板
３ 回路パターン
３ａ グランドパターン
４ 電子部品
７ 樹脂モールド
８ シールド層（導電性樹脂層）
９ 半田ボール
１１ 単位区画
１２ 大面積基板
１３ ダイシング部 DESCRIPTION OF SYMBOLS 1 High frequency module which has shield and heat dissipation 2 Board | substrate 3 Circuit pattern 3a Ground pattern 4 Electronic component 7 Resin mold 8 Shield layer (conductive resin layer)
9 Solder balls 11 Unit compartment 12 Large area substrate 13 Dicing part

Claims (2)

基板の主面上に配線及びグランドパターンを含む回路パターン及び電子部品を配し、その上に樹脂モールド及びシールド層を設け、裏面には、主面上の電子部品から基板を通して設けた外部入出力用端子を有する高周波モジュールにおいて、
前記シールド層は、厚みが２０μｍ以上の導電性樹脂層からなり、
前記導電性樹脂層は、前記樹脂モールドを覆い、その下端は前記グランドパターンに接続してなり、
前記導電性樹脂層を形成する導電性ペーストは、金属粉と熱硬化性樹脂と前記熱硬化性樹脂の硬化剤を含有し、
前記金属粉は、銀、銅、銀コート銅粉からなる群から選択された１種類又は２種類以上からなり、
前記熱硬化性樹脂は、エポキシ樹脂からなり、
前記熱硬化性樹脂の硬化剤には、イミダゾール系硬化剤が使用され、
前記金属粉と前記熱硬化性樹脂との配合比率は、熱硬化性樹脂１００重量部に対して金属粉５００〜１０００重量部とし、
前記イミダゾール系硬化剤と前記熱硬化性樹脂との配合比率は、熱硬化性樹脂１００重量部に対してイミダゾール系硬化剤３〜２０重量部として、
前記導電性樹脂層の体積抵抗率が１×１０-4Ω・ｃｍ以下、熱伝導率が５Ｗ／ｍ・Ｋ以上の高導電性、高熱伝導性を有し、低インピーダンスで前記グランドパターンに接続され、前記電子部品から放射される不要輻射を電磁シールドすることを特徴とするシールド及び放熱性を有する高周波モジュール。 A circuit pattern and electronic parts including wiring and ground patterns are arranged on the main surface of the board, a resin mold and a shield layer are provided on the circuit pattern, and an external input / output provided on the back surface from the electronic parts on the main surface through the board In a high frequency module having a terminal for
The shield layer is made of a conductive resin layer having a thickness of 20 μm or more,
The conductive resin layer covers the resin mold, and its lower end is connected to the ground pattern,
The conductive paste that forms the conductive resin layer contains metal powder, a thermosetting resin, and a curing agent for the thermosetting resin,
The metal powder is composed of one or more kinds selected from the group consisting of silver, copper, and silver-coated copper powder,
The thermosetting resin is made of an epoxy resin,
As the curing agent for the thermosetting resin, an imidazole-based curing agent is used,
The blending ratio of the metal powder and the thermosetting resin is 500 to 1000 parts by weight of the metal powder with respect to 100 parts by weight of the thermosetting resin.
The blending ratio of the imidazole curing agent and the thermosetting resin is 3 to 20 parts by weight of an imidazole curing agent with respect to 100 parts by weight of the thermosetting resin.
The conductive resin layer has a volume resistivity of 1 × 10 −4 Ω · cm or less, a thermal conductivity of 5 W / m · K or more, high conductivity and high thermal conductivity, and is connected to the ground pattern with low impedance. A high frequency module having shielding and heat dissipation, wherein electromagnetic radiation is shielded against unnecessary radiation emitted from the electronic component. 所定数の単位区画を有する大面積基板の主面上の各単位区画内に所定の配線及びグランドパターンを含む回路パターン及び電子部品を配設する回路形成工程と、
前記主面上の各単位区画間端に設けられ、グランドパターンを配設されたダイシング部を除いて、樹脂モールドを施すモールド工程と、
前記樹脂モールド上に厚みが２０μｍ以上の導電性ペーストを印刷して導電性樹脂層を形成する印刷工程と、
前記ダイシング部で各単位区画に切り分けるダイシング工程とを有し、
前記印刷工程において、
前記導電性ペーストは、金属粉と熱硬化性樹脂と前記熱硬化性樹脂の硬化剤を含有し、
前記金属粉は、銀、銅、銀コート銅粉からなる群から選択された１種類又は２種類以上からなり、
前記熱硬化性樹脂は、エポキシ樹脂からなり、
前記熱硬化性樹脂の硬化剤には、イミダゾール系硬化剤が使用され、
前記金属粉と前記熱硬化性樹脂との配合比率は、熱硬化性樹脂１００重量部に対して金属粉５００〜１０００重量部とし、
前記イミダゾール系硬化剤と前記熱硬化性樹脂との配合比率は、熱硬化性樹脂１００重量部に対してイミダゾール系硬化剤３〜２０重量部として、
前記導電性樹脂層の体積抵抗率が１×１０-4Ω・ｃｍ以下、熱伝導率が５Ｗ／ｍ・Ｋ以上の高導電性、高熱伝導性を有し、低インピーダンスで前記グランドパターンに接続され、前記電子部品から放射される不要輻射を電磁シールドし、
前記導電性ペーストが各単位区画の樹脂モールド間に充填され、加熱硬化されて、各単位区画端のダイシング部に露出したグランドパターンに接続され、樹脂モールドを覆うように印刷され、
前記ダイシング工程は、前記樹脂モールド間に充填された導電性樹脂層とそれに接続されたグランドパターンからなるダイシング部で所定数の単位区画に切り分けることを特徴とするシールド及び放熱性を有する高周波モジュールの製造方法。 A circuit forming step of disposing a circuit pattern and an electronic component including a predetermined wiring and a ground pattern in each unit section on the main surface of a large area substrate having a predetermined number of unit sections;
A molding step for applying a resin mold, except for a dicing portion provided at an end of each unit partition on the main surface and provided with a ground pattern;
A printing step of forming a conductive resin layer by printing a conductive paste having a thickness of 20 μm or more on the resin mold;
A dicing step of dividing into each unit section in the dicing unit,
In the printing process,
The conductive paste contains a metal powder, a thermosetting resin, and a curing agent for the thermosetting resin,
The metal powder is composed of one or more kinds selected from the group consisting of silver, copper, and silver-coated copper powder,
The thermosetting resin is made of an epoxy resin,
As the curing agent for the thermosetting resin, an imidazole-based curing agent is used,
The blending ratio of the metal powder and the thermosetting resin is 500 to 1000 parts by weight of the metal powder with respect to 100 parts by weight of the thermosetting resin.
The blending ratio of the imidazole curing agent and the thermosetting resin is 3 to 20 parts by weight of an imidazole curing agent with respect to 100 parts by weight of the thermosetting resin.
The conductive resin layer has a volume resistivity of 1 × 10 −4 Ω · cm or less, a thermal conductivity of 5 W / m · K or more, high conductivity and high thermal conductivity, and is connected to the ground pattern with low impedance. And electromagnetically shield unwanted radiation emitted from the electronic component,
The conductive paste is filled between the resin molds of each unit section, heated and cured, connected to the ground pattern exposed at the dicing portion at the end of each unit section, and printed to cover the resin mold,
In the dicing process, the dicing part including a conductive resin layer filled between the resin molds and a ground pattern connected thereto is divided into a predetermined number of unit sections. Production method.
JP2011220028A 2011-10-04 2011-10-04 High frequency module having shielding and heat-dissipating properties, and method of manufacturing the same Pending JP2012015548A (en)

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WO2015137257A1 (en) * 2014-03-14 2015-09-17 株式会社カネカ Electronic terminal device and method for assembling same
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JP7275528B2 (en) 2018-10-26 2023-05-18 株式会社レゾナック ELECTRONIC COMPONENT DEVICE, SEALING MATERIAL AND METHOD FOR MANUFACTURING ELECTRONIC COMPONENT DEVICE

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