CN104341774A - 用于半导体封装的模塑组合物和使用该模塑组合物的半导体封装 - Google Patents

用于半导体封装的模塑组合物和使用该模塑组合物的半导体封装 Download PDF

Info

Publication number
CN104341774A
CN104341774A CN201410273177.9A CN201410273177A CN104341774A CN 104341774 A CN104341774 A CN 104341774A CN 201410273177 A CN201410273177 A CN 201410273177A CN 104341774 A CN104341774 A CN 104341774A
Authority
CN
China
Prior art keywords
moulding compound
semiconductor packages
group
solidifying agent
epoxy resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410273177.9A
Other languages
English (en)
Other versions
CN104341774B (zh
Inventor
池受玲
金承焕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electro Mechanics Co Ltd
Original Assignee
Samsung Electro Mechanics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Publication of CN104341774A publication Critical patent/CN104341774A/zh
Application granted granted Critical
Publication of CN104341774B publication Critical patent/CN104341774B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
    • C08L77/12—Polyester-amides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C08K3/042—Graphene or derivatives, e.g. graphene oxides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C08L63/04—Epoxynovolacs
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L67/00—Compositions of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Compositions of derivatives of such polymers
    • C08L67/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
    • C08L67/03—Polyesters derived from dicarboxylic acids and dihydroxy compounds the dicarboxylic acids and dihydroxy compounds having the carboxyl- and the hydroxy groups directly linked to aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D177/00—Coating compositions based on polyamides obtained by reactions forming a carboxylic amide link in the main chain; Coating compositions based on derivatives of such polymers
    • C09D177/12—Polyester-amides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
    • C09D7/40—Additives
    • C09D7/60—Additives non-macromolecular
    • C09D7/61—Additives non-macromolecular inorganic
    • C09D7/62—Additives non-macromolecular inorganic modified by treatment with other compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/04—Liquid crystal materials characterised by the chemical structure of the liquid crystal components, e.g. by a specific unit
    • C09K19/38—Polymers
    • C09K19/3804—Polymers with mesogenic groups in the main chain
    • C09K19/3809—Polyesters; Polyester derivatives, e.g. polyamides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00—Applications
    • C08L2203/20—Applications use in electrical or conductive gadgets
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K19/00—Liquid crystal materials
    • C09K19/52—Liquid crystal materials characterised by components which are not liquid crystals, e.g. additives with special physical aspect: solvents, solid particles
    • C09K2019/521—Inorganic solid particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1017—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support
    • H01L2225/1023—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement the lowermost container comprising a device support the support being an insulating substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1047—Details of electrical connections between containers
    • H01L2225/1058—Bump or bump-like electrical connections, e.g. balls, pillars, posts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/10—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers
    • H01L2225/1005—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/1011—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices having separate containers the devices being of a type provided for in group H01L27/00 the containers being in a stacked arrangement
    • H01L2225/1094—Thermal management, e.g. cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/1533—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate
    • H01L2924/15331—Connection portion the connection portion being formed on the die mounting surface of the substrate the connection portion being formed both on the die mounting surface of the substrate and outside the die mounting surface of the substrate being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Inorganic Chemistry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

本申请公开了一种用于半导体封装的模塑组合物和使用该模塑组合物的半导体封装。该模塑组合物包括液晶热固性聚合物树脂和氧化石墨烯，从而有效地降低热膨胀系数(CTE)和翘曲以及最大化导热系数的效应。

Description

用于半导体封装的模塑组合物和使用该模塑组合物的半导体封装
相关申请的交叉引用
本申请要求2013年7月29日提交的韩国专利申请号10-2013-0089604标题为“用于半导体封装的模塑组合物和使用其制造的半导体封装”的优先权，该韩国专利申请的全部内容通过引用并入本申请。
技术领域
本发明涉及一种用于半导体封装的模塑组合物和使用该模塑组合物的半导体封装件。
背景技术
随着电子设备的发展，半导体向着具有重量轻、厚度薄和尺寸小的方向发展，使得半导体电路变得更加复杂和高度致密化。由于这种趋势，要求模塑材料的电、热和机械的稳定性作为更重要的因素。特别地，移动产品的应用处理器(AP)所产生的发热问题可能对移动产品的性能和可靠性具有重要的影响。模塑工艺，它是使用模塑化合物密封半导体的过程，是一种为了保护半导体芯片不受外部环境影响的半导体封装模塑加工方法，在操作芯片的时候提供电绝缘效果和有效地散热(radiate heat)。事实上，模塑的目的是为了保护完成引线键合或倒装焊接(flip chip bonding)的半导体不受由于例如空气或者外部环境的腐蚀等多种原因引起的电气恶化(electricaldeterioration)等，提供机械稳定性和对半导体产生的热量进行有效地散热。
通常地，作为半导体封装的模塑材料，环氧模塑化合物(EMC)被使用，该环氧模塑化合物为热固性树脂。但是，环氧模塑化合物在降低热膨胀系数(CTE)、翘曲和改善导热系数上具有限制，为了克服这种限制，提出了一种添加无机材料的填料的方法，但是，考虑到填充量该方法也具有局限性。
同时，专利文件1公开了用于包括热固性树脂和无机填料的半导体模块的绝缘树脂，但是，它在减少翘曲和降低热膨胀系数(CTE)上具有局限性。
[现有技术文件]
[专利文件]
专利文件1日本专利公开出版号JP2010-239150
发明内容
本发明的发明人发现一种含有液晶热固性聚合物树脂和氧化石墨烯的用于半导体封装的模塑组合物，它能够有效地降低热膨胀系数(CTE)、翘曲和最大化散热效应，从而完成了本发明。
为了降低热膨胀系数(CTE)和翘曲并且增加散热效应，本发明致力于提供一种含有液晶热固性聚合物树脂和氧化石墨烯的用于半导体封装的模塑组合物。
此外，本发明还致力于提供一种使用上述模塑组合物形成的半导体封装。
进一步地，本发明致力于提供一种包括电连接分别通过使用上述模塑组合物制造的上封装和下封装的焊锡凸点的半导体封装。
根据本发明一种优选的实施方式，提供了一种用于半导体封装的模塑组合物，该模塑组合物含有：液晶热固性聚合物树脂和氧化石墨烯。
所述模塑组合物可以含有含量为5-50wt％的液晶热固性聚合物树脂和含量为50-95wt％的氧化石墨烯。
所述液晶热固性聚合物树脂可以由以下化学式1表示：
[化学式1]
在上面化学式1中，R1和R2为相同或者不同的CH3或H，但是R1和R2中的至少一个为CH3，并且Ar1为含有选自酯、酰胺、酯酰胺(ester amide)、酯酰亚胺(ester imide)和醚酰亚胺中的至少一个结构单元并且具有5000或更小的分子量的二价芳香族有机基团。
Ar1可以含有选自以下结构单元组成的组中的至少一个结构单元：
其中，n和m为1-100的整数，并且，Ar2，Ar4，Ar5和Ar6为二价芳香族有机基团，且含有选自以下结构单元组成的组中的至少一个结构单元：
以及
Ar3为四价芳香族有机基团，且含有选自由以下结构单元组成的组中的至少一个结构单元：
所述氧化石墨烯可以在其表面和边缘上具有选自羟基、羧基和环氧基组成的组中的至少一种官能团。
所述模塑组合物还可以含有环氧树脂。
基于100重量份的模塑组合物，所述环氧树脂的含量为1-15重量份，并且所述环氧树脂可以为选自由萘型环氧树脂、双酚A型环氧树脂、双酚F型环氧树脂、苯酚酚醛环氧树脂、甲酚-线型酚醛环氧树脂(cresol novolacepoxy resin)、橡胶改性的环氧树脂和磷系环氧树脂组成的组中的至少一种。
所述模塑组合物还可以含有固化剂和固化促进剂。
基于100重量份的模塑组合物，所述固化剂的含量为0.1-10重量份，并且所述固化剂可以为选自由酰胺基固化剂、酸酐基固化剂、聚胺固化剂(polyamine curing agent)、聚硫化物固化剂(polysulfide curing agent)、苯酚酚醛型固化剂、双酚A型固化剂和双氰胺固化剂组成的组中的至少一种。
基于100重量份的模塑组合物，所述固化剂促进剂的含量为0.1-1重量份，并且所述固化剂促进剂可以为选自由金属基固化促进剂、咪唑基固化促进剂和胺基固化促进剂组成的组中的至少一种。
根据本发明一种优选的实施方式，提供了一种半导体封装，该半导体封装包括：安装有半导体芯片的印刷电路板；和形成在所述印刷电路板上的模塑材料，其中，所述模塑材料由上述的模塑组合物制成。
根据本发明的另一种优选的实施方式，本发明提供了一种半导体封装，该半导体封装包括：安装有第一半导体芯片的第一印刷电路板；包括形成在第一印刷电路板上的第一模塑材料的上封装；安装有第二半导体芯片的第二印刷电路板；包括形成在第二印刷电路板上的第二模塑材料的下封装；和电连接上封装和下封装的焊锡凸点，其中，所述第一模塑材料和第二模塑材料是由上述的模塑组合物制成的。
附图说明
结合附图从以下详细描述中，本发明的以上和其他目的、特征和优点更容易被理解，在附图中：
图1为使用根据本发明的一种优选的实施方式的模塑组合物形成的半导体封装的剖视图；
图2为包括电连接分别通过使用根据本发明的另一种优选的实施方式的模塑组合物制造的上封装和下封装的焊锡凸点的半导体封装的剖视图；
图3示意性地说明了根据本发明的一种优选的实施方式的氧化石墨烯的一部分结构；和
图4为本发明的实施例3和对比例3制造的样品根据填料的重量比的的导热系数的图。
具体实施方式
在本发明详细说明之前，必须需要注意的是，本说明书和权利要求中使用的术语和词语不应被解释为限于一般含义或字典定义，基于根据他或她所知晓的用于实施本发明的方法的最好描述对发明人所能够适当地定义的概念的原则，应被理解为与本发明的技术范围相关的含义和概念。另外，本发明的实施方式仅仅是说明性的，而不应被解释为限制本发明的范围，因此在本申请的时间点上可能存在多种等同和变型可以用来替代他们。
在下面的描述中，应当注意的是，为了使本发明可以由本领域技术人员容易进行，我们对本发明的实施方式进行了详细描述，也即，当本发明所涉及的已知技术可能使本发明的主旨不清楚时，其详细描述将被省略。
图1为应用根据本发明的一种优选的实施方式的模塑组合物的半导体封装100的剖视图。参照图1，第一模塑材料115形成在安装有第一半导体芯片110的第一印刷电路板113上，以用来保护半导体封装不受由于例如空气或外部环境的腐蚀类似的各种原因引起的电气恶化的影响。另外，第一半导体芯片110和第一印刷电路板113之间可以由焊锡凸点30或底部填充胶(underfill)50连接，但是，本发明并不限定于此。
图2为使用焊锡凸点30连接上封装111和下封装222而形成的半导体封装200的剖视图，所述上封装和下封装分别由根据本发明的另一种优选的实施方式的模塑组合物制造。参照图2，所述半导体封装200通过将上封装111和下封装222连接而形成，这被称为层叠封装。在所述上封装111中，第一模塑材料115被堆叠在安装有第一半导体芯片110的第一印刷电路板113上，在所述下封装222中，第二模塑材料215被堆叠在使用焊锡凸点30的安装有第二半导体芯片210的第二印刷电路板213上。另外，第一半导体芯片110和第二半导体芯片210以及第一印刷电路板113和第二印刷电路板213之间可以由焊锡凸点30或底部填充胶50连接，但是，本发明并不限定于此。
同时，根据本发明的一种代表性的优选的实施方式的用于半导体封装的模塑组合物含有液晶热固性聚合物树脂和氧化石墨烯。
液晶热固性聚合物树脂
根据本发明的优选的实施方式的用于半导体封装的模塑组合物含有液晶热固性聚合物树脂，例如，液晶热固性聚合物树脂具有3-10ppm/℃的热膨胀系数(CTE)和1-7W/mK的导热系数。相对于现有的用作环氧模塑化合物(EMC)中组合物的环氧树脂，所述液晶热固性聚合物树脂具有优良的热膨胀系数(CTE)和导热系数。所述液晶热固性聚合物树脂可以具有实现液晶性质的自身结构，同时还可以具有使所述聚合物在其主链部分很好地溶解在溶剂中的可溶性的结构，并且具有可以通过热而固化的结构的部分存在于两端。
液晶热固性聚合物树脂的含量可以为5-50wt％，特别地，优选情况下，所述液晶热固性聚合物树脂的含量为5-20wt％。但是，本发明并不限定于此。在使用的液晶热固性聚合物树脂的含量少于5wt％的情况下，在模塑组合物中的氧化石墨烯的分散性可能恶化，并且可能发生界面分层(interfacialdelamination)，在使用的液晶热固性聚合物树脂的含量多于50wt％的情况下，导热系数的改善可能不能明显地表现出来。
所述液晶热固性聚合物树脂可以由以下化学式1表示：
[化学式1]
在上面化学式1中，R1和R2为相同或者不同的CH3或H，但是R1和R2中的至少一个为CH3，并且Ar1为含有选自酯、酰胺、酯酰胺、酯酰亚胺和醚酰亚胺中的至少一个结构单元且具有5000或更小的分子量的二价芳香族有机基团。
Ar1含有选自以下结构单元组成的组中的至少一个结构单元：
其中，n和m为1-100的整数，Ar2，Ar4，Ar5和Ar6为二价芳香族有机基团，含有选自以下结构单元组成的组中的至少一个结构单元：
以及
Ar3为四价芳香族有机基团，且含有选自由以下结构单元组成的组中的至少一个结构单元：
氧化石墨烯
根据本发明的优选的实施方式的用于半导体封装的模塑组合物可以含有氧化石墨烯(GO)。所述氧化石墨烯(GO)可以具有0-1ppm/℃的热膨胀系数(CTE)和15-50W/mK的导热系数，所述氧化石墨烯可以用作组合物中的填料。
另外，所述氧化石墨烯可以在其表面和边缘上含有多个如羟基、羧基和环氧基。石墨烯可以通过与液晶热固性聚合物树脂的固化反应形成共价键，因此，可以为有机结合的复合材料。
参照图3，所述氧化石墨烯可以在其表面和边缘上含有多个如羟基、羧基和环氧基的官能团。所述官能团的种类和数量的变化取决于氧化石墨烯的氧化方法或其氧化程度。
氧化石墨烯可以物理地分布在固化的液晶聚合物树脂中，并且可以通过官能团形成化学键。含有官能团的氧化石墨烯可以通过与液晶热固性聚合物树脂的固化反应形成共价键，因此，可以为有机结合的复合材料。具体地，固化含有液晶热固性聚合物树脂和氧化石墨烯的组合物时，液晶热固性聚合物树脂和氧化石墨烯、所述液晶热固性聚合物树脂和液晶热固性聚合物树脂以及氧化石墨烯和氧化石墨烯间的固化反应发生，使得形成有机连接的复合材料。
根据本发明的优选的实施方式的用于半导体封装的模塑组合物中的氧化石墨烯的含量可以为50-95wt％，特别地，所述氧化石墨烯的含量优选为80-95wt％。在所用氧化石墨烯的含量少于50wt％的情况下，导热系数的改善不明显，在所用氧化石墨烯含量高于95wt％的情况下，模塑组合物中氧化石墨烯的分散性可能恶化和界面分层可能发生。
环氧树脂
根据本发明优选的实施方式的用于半导体封装的模塑组合物还可以含有环氧树脂。将环氧树脂加入到液晶热固性聚合物树脂中的情况下，可以减小热膨胀系数(CTE)、翘曲和增加导热系数，并且可以改善剥离强度。
所述环氧树脂可以为选自由萘型环氧树脂、双酚A型环氧树脂、双酚F型环氧树脂、苯酚酚醛环氧树脂、甲酚-线型酚醛环氧树脂、橡胶改性的环氧树脂和磷系环氧树脂组成的组中的至少一种。
基于100重量份的模塑组合物，所述环氧树脂的含量为1-15重量份，但是本发明并不是特别限定于此。在所用环氧树脂的含量少于1重量份的情况下，半导体封装上的模塑材料与基板之间的粘合力会降低，另外在所用环氧树脂的含量高于15重量份的情况下，由于模塑组合物中未反应的环氧树脂的存在，热膨胀系数(CTE)不会降低，散热性质不会改善，并且也会发生翘曲。
固化剂
根据本发明优选的实施方式的用于半导体封装的模塑组合物还可以含有固化剂。另外，进一步含有环氧树脂的模塑组合物也可以含有固化剂。基于100重量份的模塑组合物，所述固化剂的含量为0.1-10重量份，但是，本发明并不特别限定于此。在所用的固化剂的含量少于0.1重量份的情况下，固化速率会降低，另外在所用的固化剂的含量高于10重量份的情况下，未反应的固化剂的存在会增加模塑材料的吸湿率，使得绝缘性变差。
所述固化剂可以为选自由酰胺基固化剂、酸酐基固化剂、聚胺固化剂、聚硫化物固化剂、苯酚酚醛型固化剂、双酚A型固化剂和双氰胺固化剂组成的组中的至少一种。
固化促进剂
根据本发明优选的实施方式的用于半导体封装的模塑组合物还可以含有固化促进剂。另外，进一步含有环氧树脂的模塑组合物也可以含有固化促进剂。基于100重量份的模塑组合物，所述固化促进剂的含量为0.1-1重量份。所应用的固化促进剂的例子可以包括金属基固化促进剂、咪唑基固化促进剂和胺基固化促进剂。
金属基固化促进剂的例子可以包括如钴、铜、锌、铁、镍、锰、锡等类似金属的有机金属配合物或有机金属盐，但是，本发明并没有特别限定于此。有机金属配合物的具体例子可以包括例如乙酰丙酮合钴(II)、乙酰丙酮合钴(III)或类似的有机钴配合物，例如乙酰丙酮合铜(II)的有机铜配合物，例如乙酰丙酮合锌(II)的有机锌配合物，例如乙酰丙酮合铁(III)的有机铁配合物，例如乙酰丙酮合镍(II)的有机镍配合物和例如乙酰丙酮合锰(II)的有机锰配合物等。有机金属盐的例子可以包括辛酸锌、辛酸锡、环烷酸锌(zinc naphthenic acid)、环烷酸钴、硬脂酸锡和硬脂酸锌等。作为金属基固化促进剂，考虑到固化性和溶剂溶解性，优选为乙酰丙酮合钴(II)、乙酰丙酮合钴(III)、乙酰丙酮合锌(II)、环烷酸锌和乙酰丙酮合铁(III)，并且特别地，进一步优选为乙酰丙酮钴(II)和环烷酸锌。其中的一种或两种以及多种的组合的金属基固化促进剂可以被使用。
咪唑基固化促进剂的例子可以包括咪唑化合物如2-甲基咪唑、2-十一烷基咪唑、2-十七烷基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、1,2-二甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-甲基咪唑、1-苄基-2-苯基咪唑、1-氰乙基-2-甲基咪唑、1-氰乙基-2-十一烷基咪唑、1-氰乙基-2-乙基-4-甲基咪唑、1-氰乙基-2-苯基咪唑、1-氰乙基-2-十一烷基咪唑合偏苯三酸酯(1-cyanoethyl-2-undecylimidazoliumtrimellitate)、1-氰乙基-2-苯基咪唑合偏苯三酸酯(1-cyanoethyl-2-phenylimidazoliumtrimellitate)、2,4-二氨基-6-[2’-甲基咪唑基-(1’)]乙基-均三嗪(2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine)、2,4-二氨基-6-[2’-十一烷基咪唑基-(1’)]乙基-s-三嗪、2,4-二氨基-6-[2’-乙基-4’-甲基咪唑基-(1’)]-乙基-均三嗪、2,4-二氨基-6-[2’-甲基咪唑基-(1’)]乙基-均三嗪异氰尿酸加合物(2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazineisocyanic acidadduct)、2-苯基咪唑异氰酸加合物(2-phenyl-imidazoleisocyanic acid adduct)、2-苯基-4,5-二羟基甲基咪唑、2-苯基-4-甲基-5-羟基甲基咪唑、2,3-二羟基-1H-吡咯并[1,2-a]苯并咪唑(2,3-dihydroxy-1H-pyroro[1,2-a]benzimidazole)、氯化1-十二烷基-2-甲基-3-苯甲基咪唑鎓(1-dodecyl-2-methyl-3-benzyl-imidazoliumchloride)、2-甲基-咪唑啉和2-苯基-咪唑啉以及咪唑化合物和环氧树脂的加合物。其中的一种或两种以及多种的组合的咪唑基固化促进剂可以被使用。
胺基固化促进剂的例子可以包括三烷基胺如三乙胺和三丁胺等，胺化合物如4-二甲基-氨基吡啶(4-dimethylaminopyridine)，苄基二甲胺(benzyldimethylamine)、2,4,6-三(二甲氨基-甲基)苯酚、1,8-二氮杂双环(5,4,0)十一碳烯等，但是，本发明并不特别限定于此。其中的一种或两种以及多种的组合的胺基固化促进剂可以被使用。
一种可以通过使用根据本发明的优选实施方式的用于半导体封装的模塑组合物形成的半导体封装。
为了保护安装有半导体芯片的印刷电路板上的半导体芯片免受外部环境的影响，提供一种绝缘性质，以及有效散发在操作芯片时产生的热量，所述半导体封装可以通过模塑材料封装。在此，所述模塑材料可以通过应用根据本发明的优选的实施方式的模塑组合物来形成。
另外，具有层叠形状的半导体封装也可以通过电连接由使用所述模塑组合物形成的半导体封装的焊锡凸点垂直地互相连接半导体封装来形成。
在下文中，将参照以下的实施例和比较例对本发明进行更详细地说明，但它并不局限于此。
制备例1
液晶热固性聚合物的制备
将218.26g(2.0mol)的4-氨基苯酚、747.59g(4.5mol)的间苯二甲酸、276.24g(2.0mol)的4-羟基苯甲酸、282.27g(1.5mol)的6-羟基-2-萘甲酸、648.54g(2.0mol)的9,10-二羟基-9-氧杂-10-磷杂菲-10-氧化物(9,10-dihydroxy-9-oxa-10-phosphaphenanthrene-10-oxide)(DOPO)和1531.35g(15.0mol)的乙酸酐加入到20L的玻璃反应器中。将反应器内部用氮气充分置换，置换完毕，在氮气流下升温至230℃，反应器内的温度保持在230℃进行回流4h。接着，将188.18g(1.0mol)的用于封端的6-羟基-2-萘酸(6-hydroxy-2-naphtoic acid)进一步加入之后除去反应副产物乙酸和未反应的乙酸酐，从而制备液晶热固性聚合物。
实施例1
将120g氧化石墨烯分散于甲乙酮(MEK)溶剂中以制备含有80wt％浓度的氧化石墨烯浆液。然后将30g上述制备例1中制备的液晶热固性聚合物加入到制得的氧化石墨烯浆液中，接着在室温(25℃)下以约300rpm的条件搅拌至溶解，从而制备混合物。然后，将7.5g双氰胺(DICY)固化剂和1g咪唑基固化促进剂(2PHZ-PW,Shikoku化学品公司)加入到上述混合物中，300rpm的条件下再搅拌1h，从而制备模塑组合物。相对于上述制备清漆(varnish)的总重量，固体重量含量为80wt％。将清漆涂布在聚对苯二甲酸乙二醇酯(PET)离型膜上通过刮刀方法以获得约100μm的厚度，从而制造样品。将样品在室温(25℃)下干燥2h，在约80℃下在真空干燥箱中干燥1h，然后在约110℃下干燥1h，从而制造出于B阶状态(B-stage state)的样品。样品通过真空压机被完全固化。在此，最高温度约为230℃，最高压力约为2MPa。
实施例2
将120g氧化石墨烯分散于甲乙酮(MEK)溶剂中以制备含有80wt％浓度的氧化石墨烯浆液。然后将30g上述制备例1中制备的液晶热固性聚合物和15g的4-官能团萘基环氧树脂(HP-4710，DIC)一起加入到制得的氧化石墨烯浆液中，接着在室温(25℃)下以约300rpm的条件下搅拌至溶解，从而制备混合物。然后，根据上述实施例1的相同的条件和方法制备实施例2的样品。
实施例3
将142.5g氧化石墨烯分散于甲乙酮(MEK)溶剂中以制备含有95wt％浓度的氧化石墨烯浆液。然后将7.5g上述制备例1中制备的液晶热固性聚合物加入到制得的氧化石墨烯浆液中，接着在室温(25℃)下以约300rpm的条件下搅拌至溶解，从而制备混合物。然后，根据上述实施例1的相同的条件和方法制备实施例3的样品。
对比例1
将120g平均粒径分布为0.2-1μm的二氧化硅(SiO2)分散于2-甲氧基乙醇(2-methoxy ethanol)中以制备含有80wt％浓度的二氧化硅浆液。然后将30g的4-官能团萘基环氧树脂(HP-4710，DIC)加入到制得的二氧化硅浆液中，接着在室温(25℃)下以约300rpm的条件下搅拌至溶解，从而制备混合物。接着，将7.5g双氰胺(DICY)固化剂和1g咪唑基固化促进剂(2PHZ-PW,Shikoku化学品公司)加入到上述混合物中，约300rpm条件下再搅拌1h，从而制备模塑组合物。相对于上述制备清漆的总重量，固体重量含量为80wt％。将清漆涂布在聚对苯二甲酸乙二酯(PET)离型膜上通过刮刀方法以获得约100μm的厚度，从而制造样品。将样品在室温(25℃)干燥2h，在约80℃下在真空干燥箱中干燥1h，然后在约110℃下干燥1h，从而制造出于B阶状态(B-stage state)的样品。样品通过真空压机被完全固化。在此，最高温度约为230℃，最高压力约为2MPa。
对比例2
将135g平均粒径分布为0.2-1μm的二氧化硅(SiO2)分散于2-甲氧基乙醇(2-methoxy ethanol)中以制备含有90wt％浓度的二氧化硅浆液。然后将15g的4-官能团萘基环氧树脂(HP-4710，DIC)加入到制得的二氧化硅浆液中，接着在室温(25℃)下以300rpm的条件下搅拌至溶解，从而制备混合物。然后，根据上述对比例1的相同的条件和方法制备对比例2的样品。
对比例3
将142.5g平均粒径分布为0.2-1μm的二氧化硅(SiO2)分散于2-甲氧基乙醇(2-methoxy ethanol)中以制备含有95wt％浓度的二氧化硅浆液。然后将7.5g的4-官能团萘基环氧树脂(HP-4710，DIC)加入到制得的二氧化硅浆液中，接着在室温(25℃)下以约300rpm的条件下搅拌至溶解，从而制备混合物。然后，根据上述对比例1的相同的条件和方法制造对比例3的样品。
物理性质的评估
实施例和对比例中的样品的热膨胀系数使用热机械分析仪(TMA)在50-100℃温度范围内测定。样品的导热系数使用TPA-501测定，半导体芯片的发热温度由差热分析(DTA)测定。为了测定样品的翘曲性质，通过使用多柱塞系统(MPS)成型机在约180℃下持续1min传递模塑的方法用模子制作样品以制造裸露的具有长度约为20mm，宽度约为20mm左右和厚度约1mm的薄型四方扁平封装(eTQFP)作为铜设备。然后，上表面对角线方向的中心与每个eTQFP封装的边缘端之间的高度差是通过使用非接触式激光测量仪测定的。当高度差变得更小，翘曲性质优异。
表1
从上面表1可以得出，实施例1、2和3的CTE、导热系数、半导体芯片的发热温度和翘曲性质都比对比例1、2和3的更优异，特别地，氧化石墨烯含量最高的实施例3显示出最好的物理性质。特别地，通过对比应用氧化石墨烯作为填料的实施例和应用二氧化硅(SiO2)的对比例的导热系数和半导体芯片的发热温度的测定值可以得出，应用氧化石墨烯作为填料的实施例具有更优异的效果。另外，通过对比含有相同含量的液晶热固性聚合物树脂和氧化石墨烯的模塑组合物的实施例1和2，可以确定，但是实施例2的模塑组合物还含有环氧树脂，由此实施例2的CTE和导热系数被改善。
图4是表示由本发明的实施例3和对比例3按照重量比制造的样品的导热系数的曲线图。从图4中可以得出，通过涂覆含有根据本发明的优选的实施方式的液晶热固性聚合物树脂和氧化石墨烯的模塑组合物制备的实施例3的样品的导热系数比通过涂覆现有的含有环氧树脂和二氧化硅的模塑组合物制备的对比例3的样品导热系数更高。
根据本发明的优选实施方式，用于半导体封装的模塑组合物可以有效地降低热膨胀系数和翘曲，并最大限度地提高散热效应。
尽管出于说明性的目的已经公开了本发明的实施例，但是本发明的实施例并不限于此，本领域的技术人员将理解，在不脱离本发明的范围的情况下，可以进行各种修改、添加和替换。
因此，任何所有修改、变化和等价排列都应被理解为在本发明的范围内，本发明的详细的范围将由所附权利要求中公开。

Claims (12)

1.一种用于半导体封装的模塑组合物，该模塑组合物含有：
液晶热固性聚合物树脂；和
氧化石墨烯。
2.根据权利要求1所述的用于半导体封装的模塑组合物，其中，所述模塑组合物含有含量为5-50wt％的液晶热固性聚合物树脂和含量为50-95wt％的氧化石墨烯。
3.根据权利要求1所述的用于半导体封装的模塑组合物，其中，所述液晶热固性聚合物树脂由以下化学式1表示：
[化学式1]
在上面化学式1中，R1和R2为相同或者不同的CH3或H，但是R1和R2中的至少一个为CH3，并且Ar1为含有选自酯、酰胺、酯酰胺、酯酰亚胺和醚酰亚胺中的至少一个结构单元且具有5000或更小的分子量的二价芳香族有机基团。
4.根据权利要求3所述的用于半导体封装的模塑组合物，其中，Ar1含有选自以下结构单元组成的组中的至少一个结构单元：
其中，n和m为1-100的整数，Ar2，Ar4，Ar5和Ar6为二价芳香族有机基团，且含有选自以下结构单元组成的组中的至少一个结构单元：
以及
Ar3为四价芳香族有机基团，含有选自由以下结构单元组成的组中的至少一个结构单元：
5.根据权利要求1所述的用于半导体封装的模塑组合物，其中，所述氧化石墨烯在其表面和边缘上具有选自由羟基、羧基和环氧基组成的组中的至少一种官能团。
6.根据权利要求1所述的用于半导体封装的模塑组合物，其中，该模塑组合物还含有环氧树脂。
7.根据权利要求6所述的用于半导体封装的模塑组合物，其中，基于100重量份的所述模塑组合物，所述环氧树脂的含量为1-15重量份，并且所述环氧树脂为选自萘型环氧树脂、双酚A型环氧树脂、双酚F型环氧树脂、苯酚酚醛环氧树脂、甲酚-线形酚醛环氧树脂、橡胶改性的环氧树脂和磷系环氧树脂组成的组中的至少一种。
8.根据权利要求1所述的用于半导体封装的模塑组合物，其中，该模塑组合物还含有：固化剂和固化促进剂。
9.根据权利要求8所述的用于半导体封装的模塑组合物，其中，基于100重量份的所述模塑组合物，所述固化剂的含量为0.1-10重量份，并且所述固化剂为选自酰胺基固化剂、酸酐基固化剂、聚胺固化剂、聚硫化物固化剂、苯酚酚醛型固化剂、双酚A型固化剂和双氰胺固化剂组成的组中的至少一种。
10.根据权利要求8所述的用于半导体封装的模塑组合物，其中，基于100重量份的所述模塑组合物，所述固化促进剂的含量为0.1-1重量份，并且所述固化促进剂为选自金属基固化促进剂、咪唑基固化促进剂和胺基固化促进剂组成的组中的至少一种。
11.一种半导体封装，该半导体封装包括：
安装有半导体芯片的印刷电路板；和
形成在所述印刷电路板上的模塑材料，
其中，所述模塑材料由权利要求1所述的模塑组合物制成。
12.一种半导体封装，该半导体封装包括：
安装有半导体芯片的第一印刷电路板；
包括形成在所述第一印刷电路板上的第一模塑材料的上封装；
安装有第二半导体芯片的第二印刷电路板；
包括形成在所述第二印刷电路板上的第二模塑材料的下封装；和
电连接所述上封装和所述下封装的焊锡凸点，
其中，所述第一模塑材料和第二模塑材料由权利要求1所述的模塑组合物制成。
CN201410273177.9A 2013-07-29 2014-06-18 用于半导体封装的模塑组合物和使用该模塑组合物的半导体封装 Expired - Fee Related CN104341774B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020130089604A KR20150014214A (ko) 2013-07-29 2013-07-29 반도체 패키지용 몰딩 조성물 및 이를 이용한 반도체 패키지
KR10-2013-0089604 2013-07-29

Publications (2)

Publication Number Publication Date
CN104341774A true CN104341774A (zh) 2015-02-11
CN104341774B CN104341774B (zh) 2018-08-28

Family

ID=52389819

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410273177.9A Expired - Fee Related CN104341774B (zh) 2013-07-29 2014-06-18 用于半导体封装的模塑组合物和使用该模塑组合物的半导体封装

Country Status (3)

Country Link
US (1) US9390990B2 (zh)
KR (1) KR20150014214A (zh)
CN (1) CN104341774B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107403784A (zh) * 2016-05-19 2017-11-28 胡川 线路板制作方法及结构
CN108140620A (zh) * 2015-03-19 2018-06-08 衡所华威电子有限公司 用于大功率soic半导体封装应用的环氧模塑化合物

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9559081B1 (en) * 2015-08-21 2017-01-31 Apple Inc. Independent 3D stacking
KR102052900B1 (ko) 2016-10-04 2019-12-06 삼성전자주식회사 팬-아웃 반도체 패키지
US10672681B2 (en) * 2018-04-30 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor packages
KR20210058569A (ko) 2019-11-14 2021-05-24 삼성전자주식회사 고열전도성 에폭시 화합물, 및 이를 포함하는 조성물, 반도체 패키징용 소재, 성형물, 전기전자 소자 및 반도체 패키지

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101192550A (zh) * 2006-12-01 2008-06-04 矽品精密工业股份有限公司 半导体封装件及其制法
CN103073849A (zh) * 2011-10-25 2013-05-01 三星电机株式会社 用于衬底的绝缘层组合物、以及使用其的预浸料和衬底

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4688679B2 (ja) 2003-09-09 2011-05-25 三洋電機株式会社 半導体モジュール
KR20120058127A (ko) * 2010-11-29 2012-06-07 삼성전기주식회사 다층 배선기판용 절연 수지 조성물 및 이를 포함하는 다층 배선기판
KR101255925B1 (ko) * 2011-09-05 2013-04-17 삼성전기주식회사 반도체 패키지 및 그 제조방법
JP5885493B2 (ja) * 2011-12-21 2016-03-15 住友化学株式会社 半導体用パッケージ及び半導体発光装置
KR102016474B1 (ko) * 2012-04-20 2019-09-02 삼성전기주식회사 기판 절연층 조성물, 이를 이용한 프리프레그 및 기판
KR20140079036A (ko) * 2012-12-18 2014-06-26 삼성전기주식회사 절연층 조성물, 및 이를 이용한 절연층을 포함하는 기판, 및 상기 기판의 제조방법
KR20140086581A (ko) * 2012-12-28 2014-07-08 삼성전기주식회사 방열특성이 우수한 수지 조성물, 방열필름, 절연필름 및 프리프레그
KR102054967B1 (ko) * 2012-12-28 2019-12-12 삼성전기주식회사 절연 재료, 이를 포함하는 절연층 조성물, 및 상기 절연층 조성물을 이용한 기판

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101192550A (zh) * 2006-12-01 2008-06-04 矽品精密工业股份有限公司 半导体封装件及其制法
CN103073849A (zh) * 2011-10-25 2013-05-01 三星电机株式会社 用于衬底的绝缘层组合物、以及使用其的预浸料和衬底

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
《化工百科全书》编辑委员会 等: "《树脂与塑料.《化工百科全书》专业卷（上、下册）》", 31 January 2003, 化学工业出版社 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108140620A (zh) * 2015-03-19 2018-06-08 衡所华威电子有限公司 用于大功率soic半导体封装应用的环氧模塑化合物
CN108140620B (zh) * 2015-03-19 2021-10-29 衡所华威电子有限公司 用于大功率soic半导体封装应用的环氧模塑化合物
CN107403784A (zh) * 2016-05-19 2017-11-28 胡川 线路板制作方法及结构
CN107403784B (zh) * 2016-05-19 2020-04-24 胡川 线路板制作方法及结构

Also Published As

Publication number Publication date
KR20150014214A (ko) 2015-02-06
US9390990B2 (en) 2016-07-12
US20150028498A1 (en) 2015-01-29
CN104341774B (zh) 2018-08-28

Similar Documents

Publication Publication Date Title
TWI673319B (zh) 電子材料用環氧樹脂組成物、其硬化物及電子構件
CN104341774A (zh) 用于半导体封装的模塑组合物和使用该模塑组合物的半导体封装
JP6366590B2 (ja) エポキシ樹脂混合物、エポキシ樹脂組成物、硬化物および半導体装置
KR101625687B1 (ko) 열전도성 접착제
US6893736B2 (en) Thermosetting resin compositions useful as underfill sealants
KR20140086581A (ko) 방열특성이 우수한 수지 조성물, 방열필름, 절연필름 및 프리프레그
US20160194542A1 (en) Polyimide resin composition, and heat-conductive adhesive film produced using same
KR20140037646A (ko) 절연용 에폭시 수지 조성물, 절연 필름, 프리프레그 및 인쇄회로기판
KR102579149B1 (ko) 방열용 수지 조성물, 방열 부재 및 전자기기
JP6794626B2 (ja) 封止用樹脂組成物、半導体装置および車載用電子制御ユニット
CN103819881A (zh) 绝缘用树脂组合物、绝缘薄膜、半固化片及印刷电路基板
CN103665760A (zh) 用于印刷电路板的环氧树脂组合物、绝缘膜、半固化片以及多层印刷电路板
JP2001288244A (ja) 熱硬化性樹脂組成物、その製法及びそれを用いた製品
CN106663664B (zh) 导热片和半导体装置
KR101284764B1 (ko) 열전도성이 우수한 에폭시 조성물
CN113088224B (zh) 应用于封装产品的保护组合物、功率模块及其制备方法
CN104231545A (zh) 用于印刷电路板的绝缘树脂组合物、绝缘膜、半固化片和印刷电路板
KR102059813B1 (ko) 반도체 패키지용 몰딩 조성물 및 이를 이용한 반도체 패키지
JP4560928B2 (ja) インターポーザ用エポキシ樹脂組成物、プリプレグ及びそれを用いた銅張積層板
JP4729777B2 (ja) エポキシ樹脂組成物、プリプレグ及びそれを用いた銅張積層板
JP4714970B2 (ja) エポキシ樹脂組成物、プリプレグ及びそれを用いた銅張積層板
EP2123712A1 (en) Epoxy resin composition and electronic part
KR102467317B1 (ko) 열팽창성 조정제, 열팽창성 조정제로서의 사용, 열경화성 수지 조성물, 당해 열경화성 수지 조성물을 함유하는 절연재, 봉지제 및 도전 페이스트, 당해 열경화성 수지 조성물을 경화시킨 경화물, 당해 열경화성 수지 조성물을 갖는 기판 재료, 당해 열경화성 수지 조성물을 기재에 함침시킨 프리프레그, 당해 프리프레그의 열경화성 수지 조성물을 경화시킨 부재, 열팽창율의 조정 방법, 그리고 당해 조정 방법을 사용하여 제조된 부재
JP4156180B2 (ja) エポキシ樹脂組成物、プリプレグ及びそれを用いた銅張積層板
JP4665410B2 (ja) エポキシ樹脂組成物

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180828

Termination date: 20210618

CF01 Termination of patent right due to non-payment of annual fee