CN104332546B - 一种led芯片 - Google Patents
一种led芯片 Download PDFInfo
- Publication number
- CN104332546B CN104332546B CN201410481862.0A CN201410481862A CN104332546B CN 104332546 B CN104332546 B CN 104332546B CN 201410481862 A CN201410481862 A CN 201410481862A CN 104332546 B CN104332546 B CN 104332546B
- Authority
- CN
- China
- Prior art keywords
- type electrode
- layer
- type
- led chip
- metal alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 239000011248 coating agent Substances 0.000 claims abstract description 27
- 238000000576 coating method Methods 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 17
- -1 cyclic n nitroso compound Chemical class 0.000 claims abstract description 13
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 13
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 229910000679 solder Inorganic materials 0.000 claims abstract description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 35
- 239000010409 thin film Substances 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 23
- 230000000694 effects Effects 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 abstract description 14
- 238000002347 injection Methods 0.000 abstract description 4
- 239000007924 injection Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 31
- 238000004519 manufacturing process Methods 0.000 description 31
- 229920002120 photoresistant polymer Polymers 0.000 description 31
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 14
- 239000003292 glue Substances 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 10
- 229910052742 iron Inorganic materials 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000012800 visualization Methods 0.000 description 7
- 238000004070 electrodeposition Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410481862.0A CN104332546B (zh) | 2011-12-29 | 2011-12-29 | 一种led芯片 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410481862.0A CN104332546B (zh) | 2011-12-29 | 2011-12-29 | 一种led芯片 |
CN201110451883.4A CN102447033B (zh) | 2011-12-29 | 2011-12-29 | 一种高光效、低光衰以及高封装良率led芯片 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110451883.4A Division CN102447033B (zh) | 2011-12-29 | 2011-12-29 | 一种高光效、低光衰以及高封装良率led芯片 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104332546A CN104332546A (zh) | 2015-02-04 |
CN104332546B true CN104332546B (zh) | 2016-04-06 |
Family
ID=46009331
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410481862.0A Active CN104332546B (zh) | 2011-12-29 | 2011-12-29 | 一种led芯片 |
CN201410481659.3A Expired - Fee Related CN104241490B (zh) | 2011-12-29 | 2011-12-29 | 一种led芯片 |
CN201110451883.4A Expired - Fee Related CN102447033B (zh) | 2011-12-29 | 2011-12-29 | 一种高光效、低光衰以及高封装良率led芯片 |
CN201410482420.8A Active CN104332547B (zh) | 2011-12-29 | 2011-12-29 | 一种led芯片 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410481659.3A Expired - Fee Related CN104241490B (zh) | 2011-12-29 | 2011-12-29 | 一种led芯片 |
CN201110451883.4A Expired - Fee Related CN102447033B (zh) | 2011-12-29 | 2011-12-29 | 一种高光效、低光衰以及高封装良率led芯片 |
CN201410482420.8A Active CN104332547B (zh) | 2011-12-29 | 2011-12-29 | 一种led芯片 |
Country Status (1)
Country | Link |
---|---|
CN (4) | CN104332546B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108511569B (zh) * | 2018-03-28 | 2019-12-06 | 厦门乾照光电股份有限公司 | 一种led芯片及制作方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101222015A (zh) * | 2008-01-19 | 2008-07-16 | 鹤山丽得电子实业有限公司 | 发光二极管、具有其的封装结构及其制造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI257714B (en) * | 2004-10-20 | 2006-07-01 | Arima Optoelectronics Corp | Light-emitting device using multilayer composite metal plated layer as flip-chip electrode |
JP2006278751A (ja) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子 |
KR100714589B1 (ko) * | 2005-10-05 | 2007-05-07 | 삼성전기주식회사 | 수직구조 발광 다이오드의 제조 방법 |
CN101859824A (zh) * | 2009-04-07 | 2010-10-13 | 山东璨圆光电科技有限公司 | 双回路电极设计的发光二极管芯片 |
KR101103963B1 (ko) * | 2009-12-01 | 2012-01-13 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
CN101794851B (zh) * | 2010-02-24 | 2012-09-05 | 中国科学院半导体研究所 | 三角形GaN基发光二极管芯片的对称电极 |
CN101794850B (zh) * | 2010-02-24 | 2012-09-05 | 中国科学院半导体研究所 | 平行四边形GaN基发光二极管芯片的对称电极 |
JP5284300B2 (ja) * | 2010-03-10 | 2013-09-11 | 株式会社東芝 | 半導体発光素子、およびそれを用いた照明装置、ならびに半導体発光素子の製造方法 |
CN102044608A (zh) * | 2010-11-17 | 2011-05-04 | 重庆大学 | 一种倒装焊led芯片结构及其制作方法 |
CN202405306U (zh) * | 2011-12-29 | 2012-08-29 | 四川鋈新能源科技有限公司 | 一种高光效、低光衰以及高封装良率led芯片 |
-
2011
- 2011-12-29 CN CN201410481862.0A patent/CN104332546B/zh active Active
- 2011-12-29 CN CN201410481659.3A patent/CN104241490B/zh not_active Expired - Fee Related
- 2011-12-29 CN CN201110451883.4A patent/CN102447033B/zh not_active Expired - Fee Related
- 2011-12-29 CN CN201410482420.8A patent/CN104332547B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101222015A (zh) * | 2008-01-19 | 2008-07-16 | 鹤山丽得电子实业有限公司 | 发光二极管、具有其的封装结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104241490A (zh) | 2014-12-24 |
CN104332547A (zh) | 2015-02-04 |
CN102447033B (zh) | 2014-10-15 |
CN104332547B (zh) | 2016-04-06 |
CN104241490B (zh) | 2015-10-21 |
CN102447033A (zh) | 2012-05-09 |
CN104332546A (zh) | 2015-02-04 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20181024 Address after: 311115 7th floor, No. 966 Bottle Avenue, Bottle Yao Town, Yuhang District, Hangzhou City, Zhejiang Province Patentee after: Zhongzhong (Hangzhou) Intellectual Property Operations Co.,Ltd. Address before: 322023 unit 2, block A, lower Zhu Village, Jiangdong Street, Yiwu, Zhejiang, China, 2 Patentee before: YIWU YUNTUO OPTOELECTRONIC TECHNOLOGY Co.,Ltd. |
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TR01 | Transfer of patent right | ||
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Room 402, 179 Mingzhu Avenue, yong'anzhou Town, Gaogang District, Taizhou City, Jiangsu Province Patentee after: Zhongzhong (Hangzhou) Intellectual Property Operations Co.,Ltd. Address before: 311115 7th floor, No. 966 Bottle Avenue, Bottle Yao Town, Yuhang District, Hangzhou City, Zhejiang Province Patentee before: Zhongzhong (Hangzhou) Intellectual Property Operations Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200928 Address after: Room 804, building 3, entrepreneurial center, No.82 Huayuan Road, Chuzhou City, Anhui Province Patentee after: CHUZHOU YUNTUO HULIAN TECHNOLOGY Co.,Ltd. Address before: Room 402, 179 Mingzhu Avenue, yong'anzhou Town, Gaogang District, Taizhou City, Jiangsu Province Patentee before: Zhongzhong (Hangzhou) Intellectual Property Operations Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240201 Address after: No. 180 Langya Road, Chuzhou City, Anhui Province, 239000 (West 4th Floor, Chuzhou Grand Theater) Patentee after: Chuzhou Modern Industry Investment and Development Co.,Ltd. Country or region after: China Address before: 239000 room 804, building 3, Venture Center, 82 Huayuan Road, Chuzhou City, Anhui Province Patentee before: CHUZHOU YUNTUO HULIAN TECHNOLOGY CO.,LTD. Country or region before: China |