CN104332458A - 功率芯片互连结构及其互连方法 - Google Patents

功率芯片互连结构及其互连方法 Download PDF

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CN104332458A
CN104332458A CN201410615601.3A CN201410615601A CN104332458A CN 104332458 A CN104332458 A CN 104332458A CN 201410615601 A CN201410615601 A CN 201410615601A CN 104332458 A CN104332458 A CN 104332458A
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王腾
郑静
常永嘉
董晓伟
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CETC 43 Research Institute
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Abstract

本发明涉及混合集成电路功率芯片三维焊接互连技术，具体涉及一种功率芯片互连结构及其互连方法，该互连结构包括功率芯片、过渡金属片和铜带或铜框架，互连方法为：先在功率芯片上焊接过度金属片，通过过渡金属片实现功率芯片与基板过铜带的焊接互联。本发明采用梯度焊接的方式进行互联，可以在实现混合集成电路的功率芯片低功耗互连的同时，采用铜结构互连提高了互连可靠性，且结构简单，组装容易。

Description

功率芯片互连结构及其互连方法
技术领域
本发明涉及混合集成电路功率芯片三维焊接互连技术，具体涉及一种功率芯片互连结构及其互连方法。
背景技术
目前，公知的厚膜混合集成电路使用的功率芯片（主要包括：肖特基功率芯片、MOS管等）均采用铝丝键合互连工艺，铝丝键合工艺的接触电阻与自身线电阻较高，会产生一定的功耗。随着技术的发展，具有高效能的厚膜混合集成电路更受用户青睐，尤其国防高等级电路需求尤为明显，功率芯片互连使用的铝丝键合互连，其互连接触电阻高，且熔断电流较低，已不能满足高效高功率电路的发展需求。
发明内容
本发明的目的是提供一种接触电阻小、熔断电流高且连接可靠的功率芯片互连结构及其互连方法。
为实现上述目的本发明提供了以下技术方案：
一种肖特基功率芯片互连结构：所述肖特基功率芯片的正极与过渡金属片焊接互连，所述肖特基功率芯片的负极与基板表面焊盘焊接互连，所述过渡金属片的上表面与铜带焊接互连，所述铜带又与基板表面焊盘焊接互连。
所述过渡金属片为钼片，所述钼片与肖特基功率芯片之间为面接触，所述铜带呈拱形，所述钼片、基板电源正极焊盘分别在所述拱形铜带的支脚处与该铜带焊接。
一种MOS功率芯片互联结构：所述功率芯片为MOS功率芯片，所述MOS功率芯片的漏极与金属过渡片焊接互连，所述MOS功率芯片的源极与金属铜框架焊接互连，所述金属过度片与基板表面焊盘焊接互连，所述金属铜框架与基板表面焊盘焊接互连。
所述金属过渡片为铜片，所述MOS功率芯片和基板电源负极分别焊接在铜片的上下两面即三者为层叠状设置，所述金属铜框架包括两端用于与MOS功率芯片源极、基板表面焊盘进行焊接的平面段以及两平面段之间的拱形连接段。
本发明还提供了两种互联方法：
一种用于制造上述肖特基功率芯片互连结构的互连方法，包括以下步骤：
a1.采用高温焊膏通过再流焊工艺在肖特基功率芯片阳极上焊接热沉钼片；
b1.采用低温焊膏通过再流焊工艺将肖特基功率芯片焊接到基板上；
c1.铜带采用低温焊锡膏一端与肖特基功率芯片表面钼片焊接，另一端与基板的正极焊盘进行焊接互连；
在步骤a1、b1中，钼片和铜带在焊接之前经过镀金处理，所述高温焊膏和低温焊膏之间的温差梯度为30℃以上。
一种用于制造上述MOS功率芯片互连结构的互连方法，包括以下步骤：
a2. 采用低温焊膏通过再流焊工艺将铜片焊接到MOS功率芯片漏极；
b2. 采用高温焊膏通过再流焊工艺将金属铜框架的其中一个平面段焊接到MOS功率芯片的源极上；
c2.将铜片焊接到基板上；
d2.将金属铜框架上远离MOS功率芯片的平面段焊接到基板表面焊盘上；
在步骤a2、b2中，金属铜框架和铜片在焊接之前经过镀金处理，在步骤a2、c2中，高温焊膏与低温焊膏的温差梯度为30℃以上。
本发明的有益效果在于：可以在实现混合集成电路的功率芯片低功耗互连的同时，采用铜结构互连提高了互连可靠性，且结构简单，组装容易。
附图说明
图1是本发明实施例1的立体结构示意图；
图2是本发明实施例1的多个功率芯片连续互联的立体结构示意图；
图3是本发明实施例2的立体结构示意图。
具体实施方式
下述实施例是对于本发明内容的进一步说明以作为对本发明技术内容的阐释，但本发明的实质内容并不仅限于下述实施例所述，本领域的普通技术人员可以且应当知晓任何基于本发明实质精神的简单变化或替换均应属于本发明所要求的保护范围。
实施例1
如图1、图2所示，一种功率芯片互连结构，所述功率芯片为肖特基功率芯片1，所述肖特基功率芯片1的正极与过渡金属片焊接互连，所述肖特基功率芯片1与基板4表面焊盘5焊接互连，所述过渡金属片的表面与铜带3焊接互连，所述铜带3又与基板4表面焊盘5焊接互连，基板4上可设有多处用于焊接的表面焊盘5，本申请中设置两个，图1中，肖特基功率芯片1与基板4之间的表面焊盘5未显示出；所述过渡金属片与肖特基功率芯片之间的焊接材料熔点高于过渡金属片与铜带3之间的焊接材料熔点。
所述过渡金属片为钼片2，所述钼片2与肖特基功率芯片1之间为面接触，所述铜带3呈拱形，所述钼片2、基板4表面焊盘5分别在所述拱形铜带3的支脚处与该铜带3焊接。
一种用于制造上述肖特基功率芯片互连结构的互连方法，包括以下步骤：
a1.采用高温焊膏通过再流焊工艺在肖特基功率芯片1正极上焊接热沉钼片2，所述高温焊膏温度在250℃以上；
b1.采用低温焊膏通过再流焊工艺将肖特基功率芯片1焊接到基板4上；
c1.铜带3采用低温焊锡膏一端与肖特基功率芯片1表面钼片2焊接，另一端与基板4表面焊盘5进行焊接互连。
在步骤a1、b1中，钼片2和铜带3在焊接之前经过镀金处理，所述高温焊膏和低温焊膏之间的温差梯度为30℃以上。
通过热沉钼片2过渡互连有效解决铜带3与肖特基功率芯片1热匹配性，铜带3焊接面积远大于铝丝键盘面积，因此接触电阻低，同时铜导体线电阻低于铝丝，从而达到低功耗的目的。
实施例2
如图3所示，一种功率芯片互联结构，所述功率芯片为MOS功率芯片6，所述MOS功率芯片6的漏极与金属过渡片焊接互连，所述MOS功率芯片6的源极与金属铜框架8焊接互连，所述金属过渡片与基板4表面焊盘5焊接互连，所述金属铜框架8与基板4表面焊盘5焊接互连，所述MOS功率芯片6与金属铜框架之间焊接材料的熔点高于金属过渡片与基板4表面焊盘之间的焊接材料熔点。
所述金属过渡片为铜片7，所述MOS功率芯片6和基板4电源负极分别焊接在铜片7的上下两面即三者为层叠状设置，所述金属铜框架8包括两端用于与MOS功率芯片6源极、基板4表面焊盘5进行焊接的平面段以及两平面段之间的拱形连接段。
一种用于制造上述MOS功率芯片互连结构的互连方法，包括以下步骤：
a2. 采用高温焊膏通过再流焊工艺将铜片7焊接到MOS功率芯片6漏极；
b2. 采用高温焊膏通过再流焊工艺将金属铜框架8的其中一个平面段焊接到MOS功率芯片6的源极上；
c2.采用低温焊膏将铜片7焊接到基板4上；
d2.将金属铜框架8上远离MOS功率芯片6的平面段焊接到基板4表面焊盘5上。
在步骤a2、b2中，金属铜框架8和铜片7在焊接之前经过镀金处理，在步骤a2、c2中，高温焊膏与低温焊膏的温差梯度为30℃以上。
通过金属铜框架8在MOS功率芯片6焊接面积远大于铝丝键合面积，因此接触电阻低，同时铜导体线电阻低于铝丝，从而达到低功耗的目的。

Claims (8)

1.一种功率芯片互连结构，其特征在于：所述功率芯片为肖特基功率芯片（1），所述肖特基功率芯片（1）的正极与过渡金属片焊接互连，所述肖特基功率芯片（1）的负极与基板（4）表面焊盘（5）焊接互连，所述过渡金属片的上表面与铜带（3）焊接互连，所述铜带（3）又与基板（4）表面焊盘（5）焊接互连。
2.根据权利要求1所述的功率芯片互连结构，其特征在于：所述过渡金属片为钼片（2），所述钼片（2）与肖特基功率芯片（1）之间为面接触，所述铜带（3）呈拱形，所述钼片（2）、基板（4）表面焊盘（5）分别在所述拱形铜带（3）的支脚处与该铜带（3）焊接。
3.一种功率芯片互连结构，其特征在于：所述功率芯片为MOS功率芯片（6），所述MOS功率芯片（6）的漏极与金属过渡片焊接互连，所述MOS功率芯片（6）的源极与金属铜框架（8）焊接互连，所述金属过渡片与基板（4）表面焊盘（5）焊接互连，所述金属铜框架（8）与基板（4）表面焊盘（5）焊接互连。
4.根据权利要求3所述的功率芯片互连结构，其特征在于：所述金属过渡片为铜片（7），所述MOS功率芯片（6）和基板（4）表面焊盘分别焊接在铜片（7）的上下两面即三者为层叠状设置，所述金属铜框架（8）包括两端用于与MOS功率芯片（6）源极、基板（4）表面焊盘（5）进行焊接的平面段以及两平面段之间的拱形连接段。
5.一种用于制造如权利要求1或2所述的功率芯片互连结构的互连方法，其特征在于：
包括以下步骤：
a1.采用高温焊膏通过再流焊工艺在肖特基功率芯片（1）正极上焊接热沉钼片（2），所述高温焊膏温度在250℃以上；
b1.采用低温焊膏通过再流焊工艺将肖特基功率芯片（1）焊接到基板（4）上；
c1.铜带（3）采用低温焊锡膏一端与肖特基功率芯片（1）表面钼片（2）焊接，另一端与基板（4）的表面焊盘（5）进行焊接互连。
6.根据权利要求5所述的互连方法，其特征在于：在步骤a1、b1中，钼片（2）和铜带（3）在焊接之前经过镀金处理，所述高温焊膏和低温焊膏之间的温差梯度为30℃以上。
7.一种用于制造如权利要求3或4所述的功率芯片互连结构的互连方法，其特征在于：
包括以下步骤：
a2. 采用高温焊膏通过再流焊工艺将铜片（7）焊接到MOS功率芯片（6）漏极；
b2. 采用高温焊膏通过再流焊工艺将金属铜框架（8）的其中一个平面段焊接到MOS功率芯片（6）的源极上；
c2.采用低温焊膏将铜片（7）焊接到基板（4）上；
d2.将金属铜框架（8）上远离MOS功率芯片（6）的平面段焊接到基板（4）表面焊盘（5）上。
8.根据权利要求7所述的互连方法，其特征在于：在步骤a2、b2中，金属铜框架（8）和铜片（7）在焊接之前经过镀金处理，在步骤a2、c2中，高温焊膏与低温焊膏的温差梯度为30℃以上。
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