CN104321670B - Optical element - Google Patents

Optical element Download PDF

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Publication number
CN104321670B
CN104321670B CN201380024718.8A CN201380024718A CN104321670B CN 104321670 B CN104321670 B CN 104321670B CN 201380024718 A CN201380024718 A CN 201380024718A CN 104321670 B CN104321670 B CN 104321670B
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layer
film
thin film
optical
optical thin
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CN104321670A (en
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川岸秀一朗
山下照夫
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Physical Vapour Deposition (AREA)
  • Surface Treatment Of Glass (AREA)
  • Laminated Bodies (AREA)

Abstract

Optical element of the present invention (1) has optical thin film (20).Optical thin film (20) has alumina layer (21), and this alumina layer (21) is principal ingredient with aluminium oxide and has according to blooming (nd) and centre wavelength (λ 0) specify less than more than 0.010 2.00 optical thin film coefficient (x) of scope, in the Same Wavelength of center wave band, the side-play amount of the 2nd reflectivity (R2) when the 1st reflectivity (R1) during normal temperature and heating is less than 0.50%.

Description

Optical element
Technical field
The present invention relates to optical element.
Background technology
The optical elements such as optical glass lens in order to obtain the optical characteristics of expectation, its surface coated as optical surface (coating) optical thin film.As optical thin film, the structure of known monofilm or multilayer film in the last few years, sometimes uses and comprises aluminium oxide (Al 2o 3) optical thin film (such as with reference to patent documentation 1) of sandwich construction of layer.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 9-159803 publication
Summary of the invention
The problem of invention for solving
But, comprise the optical thin film of alumina layer when the optical surface of coated optical element, produce irregular colour on the surface of optical element sometimes.This irregular colour be due to the optical thin film in the face of optical surface film quality (refractive index of film and film density etc.) local uneven and produce.The essential factor that the finished product rate that the unevenness that the generation of irregular colour can become the optical characteristics (such as reflectivity and coating chromaticity matter (color sensation)) of optical thin film causes reduces.Therefore, expect the generation of irregular colour to prevent trouble before it happens.
The object of the present invention is to provide a kind of optical element, it has evenly and the optical thin film of film quality closely, even if this optical thin film is for comprising the optical thin film of alumina layer, also can not produce irregular colour.
For solving the means of problem
The present invention completes to reach above-mentioned purpose.
In order to reach above-mentioned purpose, first present inventor etc. have studied the generation essential factor of irregular colour.Its result, the Producing reason of irregular colour is, alumina layer sucks moisture etc. in film forming or after film forming.About this reason, also can be able to clearly according to the result for the side-play amount related the circumstances below (wavelength shift, the variable quantity of dichroism when being in other words normal temperature and when heating).
And based on this opinion, present inventor etc. conduct in-depth research further, its result, obtain following imagination, even can realize evenly and the alumina layer of film quality closely, then perhaps can prevent the suction of the moisture of the generation essential factor as irregular colour etc.
The present invention completes according to the neodoxy of above-mentioned present inventor etc. and imagination.That is, present inventor etc. are according to above-mentioned neodoxy and imagination, contemplate following problem solution.
The optical element of a mode of the present invention has optical thin film.Optical thin film has alumina layer, this alumina layer is principal ingredient with aluminium oxide and has the optical thin film coefficient of scope according to less than more than 0.010 2.00 of blooming and centre wavelength regulation, in the Same Wavelength of center wave band, the side-play amount of the 2nd reflectivity when the 1st reflectivity during normal temperature and heating is less than 0.50%.
The effect of invention
According to the present invention, can obtaining and a kind ofly to have evenly and the optical element of the optical thin film of film quality closely, even if this optical thin film is for comprising the optical thin film of alumina layer, also can not produce irregular colour.
Accompanying drawing explanation
Fig. 1 is the important part sectional view of the configuration example representing the optical element applying the 1st embodiment of the present invention.
Fig. 2 draws the wavelength of light of optical thin film (alumina layer) of embodiments of the invention 1 and the key diagram of a concrete example of the relation of light reflectance in two-dimensional coordinate plane.
Fig. 3 is the key diagram about the comparative example 1 as the comparison other with embodiments of the invention 1.
Fig. 4 is the important part sectional view of the configuration example representing the optical element applying the 2nd embodiment of the present invention.
Fig. 5 is the key diagram of the wavelength of light of the optical thin film drawing embodiments of the invention 2 in two-dimensional coordinate plane and a concrete example of the relation of light reflectance.
Fig. 6 is the key diagram about the comparative example 2 as the comparison other with embodiments of the invention 2.
Fig. 7 is the key diagram of the wavelength of light of the optical thin film drawing embodiments of the invention 3 in two-dimensional coordinate plane and a concrete example of the relation of light reflectance.
Fig. 8 is the key diagram of the wavelength of light of the optical thin film drawing embodiments of the invention 4 in two-dimensional coordinate plane and a concrete example of the relation of light reflectance.
Fig. 9 is the key diagram of the wavelength of light of the optical thin film drawing embodiments of the invention 5 in two-dimensional coordinate plane and a concrete example of the relation of light reflectance.
Embodiment
Below, the of the present invention 1st and the 2nd embodiment is described with reference to the accompanying drawings.
Here, about each embodiment, be described item by item according to following order.
1. the entirety of optical element is formed
2. the formation of optical thin film
3. film formation step
In addition, about the 1st and the 2nd embodiment, following explanation is made equally.
4. the effect of the 1st and the 2nd embodiment
5. variation
In the 1st embodiment, the optical thin film be formed on the optical surface of optical element is made up of monofilm.In addition, in the 2nd embodiment described later, the optical thin film be formed on the optical surface of optical element is made up of multilayer film.
In addition, in the following embodiments, about center wave band, the wave band of visible ray is exemplified out as one, if wavelength region may is more than 400nm below 700nm, establishes central wavelength lambda 0for 550nm is described.In addition, as optical thin film coefficient, be described with the situation of the scope of desirable 0.010 ~ 2.00.It should be noted that, in the description about the numerical value beyond wavelength region may, as long as no being particularly limited to, " numerical value ~ numerical value " just comprises the value at two ends.
[the 1st embodiment]
The entirety of < 1. optical element forms >
First, illustrate that the entirety of optical element is formed.
Optical element refers to element light (especially visible ray) being carried out to certain optical processing, specifically can enumerate the optical device such as lens, prism, catoptron, color filter, photoconduction, refracting element.
Fig. 1 is the important part sectional view representing the configuration example applying optical element of the present invention.
As shown in Figure 1, the applied optical thin film 20 of optical surface 5 of the optical element base material 10 as device substrate of optical element 1.
Optical element base material 10 is made up of optical glass material, is formed as the sphere of optical surface 5 or the optical function face of aspheric surface, plane, diffraction grating etc. on the surface of optical element base material 10.In addition, as the optical glass material of optical element base material 10, such as, can use M-TAFD305, M-LAC130, M-BACD12, M-FDS2, M-FD80, M-TAFD307, M-FCD1, M-FCD500, M-PCD4, M-TAF101, E-FDS1, E-FDS2, TAFD30, TAFD35, TAF1, FCD100, FCD505, BACD5 (HOYA Corp.'s system) etc.
The formation > of < 2. optical thin film
Then, the optical thin film 20 on the optical surface 5 of the optical element base material 10 being formed at optical element 1 is described.
Optical thin film 20 has the function of the optical effect (optical characteristics) of auxiliary optical component 1, specifically, has the function of minimizing (preventing) light in reflextion from lens surface.
Optical element base material 10 to be positioned at the layer of optical surface 5 contact side be the layer (hereinafter referred to as " alumina layer ") 21 formed by aluminium oxide (aluminium oxide).Wherein, in this 1st embodiment, alumina layer 21 is formed by the film forming process being formed particle with the ion energy accumulating film of more than 10eV.Specifically, ion beam assisted depositing described later (Ion-beamAssistedDeposition, hereinafter referred to as " IAD ") is used.If this alumina layer 21 is used as optical thin film 20, then about the wavelength of light and the relation of light reflectance, there is following membrane structure, the front and back of the heating namely till the set point of temperature can removing moisture, the maximal value of the change of the light reflectance of the wavelength region may of more than 400nm below 700nm is less than 0.50%.
Here, " before heating " represent heat optical film 20 before (that is, situation when optical thin film 20 be normal temperature), during heating during " after heating " expression heat optical film 20.In addition, " maximal value of the change of light reflectance " represents in the Same Wavelength of the wavelength region may of more than 400nm below 700nm, the absolute value of the difference of the 2nd reflectivity R2 when the 1st reflectivity R1 during normal temperature and heating (following, to be denoted as offset Δ R (=| R1-R2|)).
In addition, as the optimal way of present embodiment, alumina layer 21 has following membrane structure, and namely in the Same Wavelength of the wavelength region may of more than 400nm below 700nm, the offset Δ R of the 2nd reflectivity R2 when the 1st reflectivity R1 during normal temperature and heating is less than 0.30%.It should be noted that, in the following description, during normal temperature, represent 25 DEG C, when being heated to 150 DEG C as an example expression during heating.
In addition, as the mode of present embodiment, the refractive index n of alumina layer 21 is less than more than 1.64 1.70.It should be noted that, about the formation film formation step of alumina layer 21, the Rotating fields etc. of alumina layer 21, its details will be described later.
< 3. film formation step >
Then, the film formation step of the optical thin film 20 of above-mentioned formation is described.
Optical thin film 20 is formed by making film form particle film forming on the optical surface 5 of the optical element base material 10 of optical element 1.
(film formation process)
Describe the film formation process forming alumina layer 21 in detail.
(the film forming gimmick of alumina layer)
In the film formation process of this 1st embodiment, alumina layer 21 uses ion beam assisted depositing (Ion-beamAssistedDeposition, hereinafter referred to as " IAD "), formed by film forming the film forming process of particle packing on the optical surface 5 of optical element base material 10 with the ion energy of more than 10eV.
Here, IAD is following film forming process: in vacuum moulding machine, using ion gun to being irradiated gaseous ion (with the electronics of the same amount for neutralizing) by film forming matter, utilizing its kinetic energy, and makes film form particle packing.According to this IAD, the ion energy of irradiation can be increased, obtain the film of evenly and closely film quality.It should be noted that, here, " evenly and closely film quality " when optical thin film 20 is formed by alumina layer 1 layer is defined as the situation of following membrane structure, namely about the wavelength of light and the relation of light reflectance, the front and back of the heating till the set point of temperature can removing moisture, the maximal value of the change of the light reflectance of the wavelength region may of 400nm ~ 700nm is less than 0.50%.In addition, " evenly and closely film quality " when optical thin film 20 is formed by the multilayer film comprising alumina layer is defined as the situation of following membrane structure, namely, in the Same Wavelength of the wavelength region may of more than 400nm below 700nm, the offset Δ R of the 2nd reflectivity R2 when the 1st reflectivity R1 during normal temperature and heating is 0.30%.It should be noted that, as long as have the film of alleged " evenly and closely film quality " here, would not irregular colour be produced.
(membrance casting condition of alumina layer)
The membrance casting condition of the IAD of the film formation process of this 1st embodiment is as follows.
Such as, when the ion gun for IAD is thermoelectron stimulable type ion gun, use the mixed gas of oxygen and argon as the importing gas in membrane forming process room, and gas flow is imported for it, makes oxygen: 0 ~ 200SCCM (StandardCubicCentimeterperMinutes) and argon: at least one party in 0 ~ 200SCCM is more than 0SCCM.About the output of ion gun, the voltage and current that facility is added on the filament of ion gun is respectively filament voltage: 10 ~ 100V, filament current: 15 ~ 150A.And then the voltage and current that facility is added on the anode of ion gun is respectively anode voltage: 10 ~ 500V, anode current 1 ~ 30A.In addition, rate of film build is 0.01 ~ 1.50nm/sec.
In this 1st embodiment, use the film forming device (not shown) with the ion gun of thermoelectron stimulable type.The ion gun of this thermoelectron stimulable type by increasing the radical of the filament as the thermoelectron production part forming ion gun, thus can be formed particle with the ion energy accumulating film of more than 10eV, the layer of formation evenly and closely film quality.
In addition, such as, when the ion gun for IAD is high frequency (RF) stimulable type ion gun, about the output of ion gun, the voltage and current that facility is added on the accelerating electrode of ion gun is respectively accelerating potential: 10 ~ 1500V, acceleration electric current: 10 ~ 1500mA.In addition, for accelerating electrode, between electrode and ground connection apply+.In addition, the voltage and current that facility is added on the rejector electrode of ion gun is respectively rejector voltage: 0 ~ 1000V, rejector electric current: 10 ~ 100mA.It should be noted that, for rejector, between electrode and ground connection apply-.In addition, other guide is the condition identical with the situation of above-mentioned thermoelectron ion gun.
(film quality of alumina layer)
If by this condition film forming, then on the optical surface 5 of optical element base material 10, formed particle with the film of the ion energy of more than 10eV (that concrete is such as about 1000eV) accumulation alumina layer 21.Therefore, the optical surface 5 of optical element base material 10 to be formed evenly and the alumina layer 21 of film quality closely.
Then, enumerate embodiment, illustrate embodiments of the present invention.Wherein, the present invention is not limited to following embodiment certainly.
In addition, the oxidation film of constituting layer is the film quality expected, is not particularly limited to its composition.About the composition of pellumina, comprise the aluminium oxide (Al as stoichiometric composition 2o 3) composition comparatively stable, be thus described as Al in the following description 2o 3layer, but be not limited to Al 2o 3, consisting of Al xo ywhen, such as, the composition about y/x=1 ~ 2 can be there is.Various oxidation film such as this silicon oxide film for following explanation, tantalum-oxide film etc. is also identical.
In addition, in the following description, the numbering of layer is given in order from optical surface 5 side of lens substrate 10.In addition, with n represent the refractive index of each layer, d represents physical film thickness, nd represents blooming, x represents optical thin film coefficient, λ 0represent centre wavelength.In addition, blooming nd is represented by the long-pending of refractive index n and physical film thickness d.
It should be noted that, optical thin film coefficient x represents by following formula (1), is according to blooming nd and central wavelength lambda 0regulation.
Optical thin film coefficient x=nd × (1/ (λ 0/ 4)) formula (1)
In addition, according to blooming nd and central wavelength lambda 0regulation and be that the optical thin film coefficient x of the alumina layer of principal ingredient is set in the scope of less than more than 0.010 2.000 with aluminium oxide.In addition, as central wavelength lambda 0that illustrate is 550nm, also can be set as 500nm, 1000nm or 2000nm etc.In addition, the physical film thickness d of alumina layer can be set as the scope of more than 8.0nm below 500.0nm.In addition, in above-mentioned formula (1) and the following description, as divided by central wavelength lambda 0value use " 4 ", but to be not limited thereto.Such as, can be the integer of " 2 " and " 6 " etc.
(embodiment 1)
Specifically, in embodiment 1, following optical thin film 20 is defined.
Table 1 represents that the film of the optical thin film 20 of embodiment 1 is formed.In addition, table 2 represents the film formation condition of the optical thin film 20 of embodiment 1.
[table 1]
[table 2]
Optical element base material 10 employs the M-TAFD305 (HOYA Corp.'s system) as glass mold lens nitre kind.And, the optical surface 5 of this optical element base material 10 defines the optical thin film 20 of single layer structure.Optical thin film 20 is Al of physical film thickness 92.91nm 2o 3layer 21.
Al 2o 3layer 21, to be consisted of the mode of particle the ion energy accumulating film of 90eV, has carried out film forming process according to following membrance casting condition.That is, at film forming Al 2o 3in the film formation process of layer 21, use thermoelectron stimulable type ion gun as ion gun, the voltage and current that facility is added on anode is respectively anode voltage: 90V, anode current: 15A.In addition, the voltage and current that facility is added on filament is respectively filament voltage: 55V, filament current: 90A.In addition, oxygen (O is used 2) with the mixed gas of argon (Ar) as the importing gas in membrane forming process room, if O 2gas flow be the gas flow of 35SCCM, Ar be 5SCCM.In addition, if the temperature as the optical element base material 10 of film forming handling object thing is 250 DEG C.In addition, if Al 2o 3velocity of evaporation (rate of film build) be 0.10nm/sec.
The wavelength of light and the relation of light reflectance are determined to the optical thin film 20 (monofilm be made up of alumina layer 21) formed by above membrance casting condition, the result shown in Fig. 2 can be obtained.
Fig. 2 is in two-dimensional coordinate plane, draw embodiment 1 the wavelength of light of optical thin film 20 (alumina layer 21) and the key diagram of the relation of light reflectance.In fig. 2, for alumina layer 21, about situation during normal temperature and when being heated to as the set point of temperature can removing moisture 150 DEG C an of example, the wavelength of light and the relation of light reflectance is drawn respectively in two-dimensional coordinate plane, wherein transverse axis is the wavelength (unit: nm) of light, and the longitudinal axis is light reflectance (unit: %).
It should be noted that, in Fig. 2, for the alumina layer 21 carrying out IAD with the condition illustrated in this 1st embodiment and obtain, show a concrete example of the wavelength of light and the relation of reflectivity.In addition, in the partial enlarged drawing of Fig. 2, reflectivity when reflectivity when reflectivity R1 and R2 represents the normal temperature of the Same Wavelength of regulation respectively and heating.
In addition, arrange in the left side 5 of table 3 represent wavelength 400nm, 500nm, 600nm, 700nm of Fig. 2 respectively, (A) normal temperature time reflectivity R1, (B) reflectivity R2, offset Δ R (with the difference of reflectivity R1 during absolute value representation normal temperature with reflectivity R2 during heating) when heating.In addition, wavelength during maximum offset Δ Rmax and the minimum offset Δ Rmin and Δ Rmax and Δ Rmin of the wavelength 400nm ~ 700nm representing Fig. 2 is respectively arranged on the right side 2 of table 3.
[table 3]
Content according to Fig. 2, table 3, the tying up to drafting position in two-dimensional coordinate plane about the wavelength of light and the pass of reflectivity and almost do not change when normal temperature and when heating of alumina layer 21.That is, each drafting position known is close to and almost overlaps, and when normal temperature and when heating, the change of reflectivity is minimum.
During the normal temperature of Fig. 2 and heating time the skew (change) of reflectivity measure Δ R specific as follows described in.
In the wave band of more than 400nm below the 700nm as visibility region, skew (change) the amount Δ R of reflectivity is maximum when wavelength is 415nm.And reflectivity R1 during normal temperature is 6.893%, in contrast, reflectivity R2 during heating is 6.951%, their difference (the offset Δ R of reflectivity during normal temperature and when heating) is 0.058%.In addition, offset Δ R is minimum situation when be wavelength being 433nm, 665nm and 666nm, and offset Δ R is 0.014%.In this wave band, about other wavelength, offset Δ R belongs in the scope of minimum value 0.014% ~ maximal value 0.058%.That is, in the wave band of more than 400nm below 700nm, offset Δ R is less than 0.058, minimumly suppressed.
As above, to be minimum be offset Δ R because alumina layer 21 has evenly and film quality closely.
Measurement result according to Fig. 2, table 3, at least in the wavelength region may of more than 400nm below the 700nm as visibility region, alumina layer 21 is evenly and closely film quality, does not produce irregular colour.In addition, if the optical thin film 20 of embodiment 1, then anti-reflective function can be given full play in visibility region.It should be noted that, the optical thin film 20 formed in embodiment 1 is the monofilms be made up of alumina layer, more preferably makes offset Δ R be less than 0.10%.
(comparative example 1)
Fig. 3 is the key diagram about the comparative example 1 as the comparison other with embodiments of the invention 1.In addition, Fig. 3, in order to compare with the content shown in Fig. 2, about the situation of by vacuum moulding machine, the alumina layer be formed on the optical surface 5 of optical element base material 10 being carried out to film forming, shows a concrete example of the wavelength of light and the relation of reflectivity.
For optical element base material 10, employ the M-BACD12 (HOYA Corp.'s system) as glass mold lens nitre kind.And, the optical surface 5 of this optical element base material 10 defines the optical thin film be made up of monofilm.
Specifically, in comparative example 1, define following optical thin film.
Table 4 represents that the film of the optical thin film of comparative example 1 is formed.In addition, table 5 represents the film formation condition of the optical thin film of comparative example 1.
[table 4]
[table 5]
Optical thin film is the Al of 84.41nm by the physical film thickness of vacuum moulding machine film forming 2o 3layer.In addition, Al 2o 3layer is with depositing Al 2o 3mode, carried out film forming process according to the membrance casting condition shown in table 5.That is, at Al 2o 3in the film formation process of layer, use oxygen (O 2) gas as the importing gas in membrane forming process room, if O 2gas flow be 15SCCM.In addition, if the temperature as the optical element base material 10 of film forming handling object thing is 250 DEG C.In addition, if Al 2o 3velocity of evaporation (rate of film build) be 0.80nm/sec.
The wavelength of light and the relation of light reflectance are determined for the optical thin film formed according to above membrance casting condition (monofilm be made up of alumina layer), obtains the result shown in Fig. 3.
In the wavelength of the light shown in known Fig. 3 and the relation of reflectivity, the drafting position in two-dimensional coordinate plane when normal temperature and heating time have a great difference.During the normal temperature of Fig. 3 and heating time skew (change) the measurer body of reflectivity as described in table 6 and following content.It should be noted that, in table 6, represent in the left side of table 6 wavelength 400nm, 500nm, 600nm, 700nm of Fig. 3, (A) normal temperature time reflectivity R1 (not shown) and (B) reflectivity R2 (not shown), offset Δ R when heating (with the difference of reflectivity during absolute value representation normal temperature with reflectivity during heating).In addition, the wavelength during maximum offset Δ rmax of the wavelength 400nm ~ 700nm of the list diagram 3 in the rightmost side of table 6 and Δ rmax.
[table 6]
In the wave band of more than 400nm below the 700nm as visibility region, the offset Δ R of reflectivity is maximum when wavelength is 489nm and 502nm.When wavelength is 489nm, reflectivity during normal temperature is 7.293%, and on the other hand, reflectivity during heating is 6.786%, and their difference (the offset Δ R of reflectivity during normal temperature and when heating) is 0.507%.In addition, when wavelength is 502nm, reflectivity during normal temperature is 7.349%, and on the other hand, reflectivity during heating is 6.842%, and their difference (the offset Δ R of reflectivity during normal temperature and when heating) is 0.507%.
That is, in the wave band of more than 400nm below 700nm, the maximal value of the offset Δ R of reflectivity during normal temperature and when heating is more than 0.50%.
As above, when based on vacuum-deposited alumina layer, the reason that offset Δ R is larger can be thought, the alumina layer formed is Porous, when normal temperature, (before removing moisture solution) sucks moisture etc., and the moisture etc. sucked when it heats is removed.In other words, because the maximal value of offset Δ R is more than 0.50%, thus this alumina layer non-homogeneous and film quality closely.
Integrated survey Fig. 2 as implied above, 3 content known, if during the normal temperature of the wavelength region may of more than 400nm below 700nm and heating time the maximal value of offset Δ R of reflectivity be less than 0.50% (be preferably less than 0.30%, be more preferably less than 0.10%), then alumina layer 21 is evenly and closely film quality.
[the 2nd embodiment]
Then, the 2nd embodiment is described.In the 2nd embodiment, as mentioned above, the optical thin film 20 be formed on the optical surface 5 of optical element base material 10 is made up of multilayer film.1st embodiment and the 2nd embodiment comprise more common part.Therefore, in the explanation of the 2nd following embodiment, the part different from the 1st embodiment is stressed.
The entirety of < 1. optical element forms >
The entirety of optical element forms identical with the 1st embodiment.
The formation > of < 2. optical thin film
Then, the formation of the optical thin film 20 (multilayer film) on the optical surface 5 of the optical element base material 10 being formed at the optical element 1 shown in Fig. 4 is described.Fig. 4 shows the important part sectional view of the configuration example of optical element, and the configuration example of this optical element is the example of the optical element 1 applying the 2nd embodiment of the present invention.Optical thin film 20 shown in Fig. 4 has antireflection film function, and optical element base material 10 is optical glass lens.In addition, optical thin film 20 is made up of 8 Rotating fields of the 1st layer to the 8th layer that is formed in order from optical surface 5 side of optical element base material 10 to obtain anti-reflective function.In addition, optical thin film 20 also can be consisted of the m layer (m is the integer of more than 2) beyond 8 layers.
(the 1st layer)
The formation of the 1st layer is identical with the 1st embodiment.
(the 2nd layer ~ the 7th layer)
In the multilayer film of the 1st layer to the 8th layer, from overlapping to form in being the repetitive structure portion of alternately laminated low refractive index material layer and high refractive index material layer as the 2nd layer the alumina layer 21 of the 1st layer to the 7th layer.More specifically, the 2nd layer, the 4th layer and the 6th layer is low refractive index material layer 22,24 and 26.In addition, the 3rd layer, the 5th layer and the 7th layer is high refractive index material layer 23,25 and 27.As the formation material of low refractive index material layer 22,24 and 26, such as can use refractive index n be 1.45 ~ 1.50 monox.In addition, as the formation material of high refractive index material layer 23,25 and 27, such as can use refractive index n be 2.00 ~ 2.35 tantalum oxide.
In addition, the Rotating fields in the repetitive structure portion enumerated here is only a concrete example.Such as, about forming the number of plies in repetitive structure portion, can not be that above-mentioned low refractive index material layer and high refractive index material layer are respectively 3 layers and amount to 6 layers yet, but be respectively 4 layers and other the Rotating fields of 8 layers etc. altogether.In addition, such as, about the formation material of low refractive index material layer 22,24 and 26, except above-mentioned monox, aluminium oxide, magnesium fluoride, aluminum fluoride, yttrium fluoride, neodymium fluoride etc. can also be used.And then, such as, about the formation material of high refractive index material layer 23,25 and 27, except above-mentioned tantalum oxide, titanium dioxide, niobium oxide, zirconia, palladium oxide, zinc paste etc. can also be used.In addition, each layer of the 2nd layer to the 8th layer can also use the composite material mixed according to appropriate ratio by above material.
(the 8th layer)
In the multilayer film of the 1st layer to the 8th layer, the 8th layer that is positioned at outside surface side is the layer 28 formed by magnesium fluoride.It should be noted that, as long as the 8th layer of function that can play as diaphragm, such as, can be formed by other the low-index material such as monox, aluminum fluoride, yttrium fluoride, neodymium fluoride.
< 3. film formation step >
Then, the film formation step of the optical thin film 20 of above-mentioned formation is described.
Optical thin film 20 film forming the 1st layer to the 8th layer in order on the optical surface 5 of the optical element base material 10 of optical element 1.
(the 1st layer of film formation process)
1st layer of film formation process is identical with the 1st embodiment, thus omits the description.
(the 2nd layer of film formation process ~ 8th layer film formation process)
After the 1st layer of film formation process film forming alumina layer 21, then, in order through the 2nd layer of film formation process of film forming the 2nd layer, the 3rd layer of film formation process of film forming the 3rd layer, the 4th layer of film formation process of film forming the 4th layer, the 5th layer of film formation process of film forming the 5th layer, the 6th layer of film formation process of film forming the 6th layer, the 7th layer of film formation process of film forming the 7th layer and the 8th layer of film formation process of film forming the 8th layer.
In the 2nd layer of film formation process ~ 8th layer film formation process, in the same manner as the situation of the film formation process of above-mentioned 1st embodiment, IAD film forming the 2nd layer ~ the 8th layer can be passed through.Wherein, the 2nd layer of film formation process ~ 8th layer film formation process is not necessarily undertaken by IAD, such as, can carry out film forming by vacuum moulding machine.
It should be noted that, about the details of the 2nd layer of film formation process ~ 8th layer film formation process, use known technology to implement, at this, the description thereof will be omitted.In addition, when using IAD in the 2nd layer of film formation process ~ the m layer film formation process, film forming can be carried out by above-mentioned membrance casting condition and following concrete shown condition.
Pass through the 1st layer of above film formation process ~ 8th layer film formation process in order, thus film forming is coated on the optical thin film 20 on the optical surface 5 of the optical element base material 10 of optical element 1.
Then, enumerate embodiment, illustrate the 2nd embodiment of the present invention.Wherein, the present invention is not limited to following embodiment certainly.
Fig. 5, Fig. 7 ~ Fig. 9 is the key diagram about embodiments of the invention 2 ~ embodiment 5.In addition, Fig. 6 is the key diagram about comparative example 2.
In addition, the oxidation film forming each layer is the film quality expected, is not particularly limited to its composition.About the composition of pellumina, comprise the aluminium oxide (Al as stoichiometric composition 2o 3) composition comparatively stable, be thus described as Al in the following description 2o 3layer, but be not limited to Al 2o 3, will form as Al xo ywhen, such as, the composition about y/x=1 ~ 2 can be there is.Also be identical for the various oxidation films of this silicon oxide film for following explanation, tantalum-oxide film etc.
(embodiment 2)
Particularly, in example 2, the optical thin film 20 shown in table 7 is formed.
Table 7 represents that the film of the optical thin film 20 of embodiment 2 is formed.In addition, table 8 represents the film formation condition of the optical thin film 20 of embodiment 2.
[table 7]
[table 8]
In example 2, optical element base material 10 is used as the M-LAC130 (HOYA Corp.'s system) of glass mold lens nitre kind.And, the optical surface 5 of this optical element base material 10 is formed the optical thin film 20 of 8 Rotating fields.That is, the 1st layer of optical thin film 20 is the Al of physical film thickness 10.00nm by IAD film forming 2o 3layer 21.
The SiO of the 2nd layer ~ the 7th layer physical film thickness 4.20nm that has been stacked in order 2the Ta of layer 22, physical film thickness 28.44nm 2o 5the SiO of layer 23, physical film thickness 16.45nm 2the Ta of layer 24, physical film thickness 74.71nm 2o 5the SiO of layer 25, physical film thickness 15.04nm 2the Ta of layer 26, physical film thickness 30.86nm 2o 5the repetitive structure portion that layer 27 is formed.Form the 2nd layer ~ the 7th layer of this repetitive structure portion also by IAD film forming.
The 8th layer of most surface layer as optical thin film 20 is the MgF of the physical film thickness 97.74nm by depositing masking 2layer 28.
As above, optical thin film 20 is multilayer films 21 ~ 28 that stacked multiple filmogen is formed, and multilayer film 21 ~ 28 comprises the silicon oxide layer 22,24,26 formed by monox and the tantalum oxide layers 23,25,27 formed by tantalum oxide.
In these multilayer films, Al 2o 3layer 21, by being formed the mode of particle with the ion energy accumulating film of 90eV, has carried out film forming process according to following membrance casting condition.That is, at film forming Al 2o 3in 1st layer of film formation process of layer 21, use thermoelectron stimulable type ion gun as ion gun, the voltage and current that facility is added on anode is respectively anode voltage: 90V, anode current: 18A.In addition, the voltage and current that facility is added on filament is respectively filament voltage: 55V, filament current: 90A.And then, use O 2with the mixed gas of Ar as the importing gas in membrane forming process room, if O 2gas flow be the gas flow of 40SCCM, Ar be 10SCCM.In addition, if the temperature as the optical element base material 10 of film forming handling object thing is 250 DEG C.In addition, if Al 2o 3velocity of evaporation (rate of film build) be 0.10nm/sec.Further, SiO 2velocity of evaporation (rate of film build) be 0.30nm/sec, Ta 2o 5velocity of evaporation (rate of film build) be 0.50nm/sec, MgF 2velocity of evaporation (rate of film build) be 0.80nm/sec.
The wavelength of light and the relation of light reflectance are measured to the optical thin film 20 by above membrance casting condition film forming, the result shown in Fig. 5 can be obtained.
Fig. 5 is the key diagram of the wavelength of light of the optical thin film drawing embodiments of the invention 2 in two-dimensional coordinate plane and a concrete example of the relation of light reflectance.It should be noted that, in the broken-away enlarged view in fig. 5, reflectivity R2 when reflectivity R1 when reflectivity R1 and R2 represents the normal temperature of the Same Wavelength of regulation respectively and heating.In addition, in the following description, the absolute value of the difference of reflectivity R2 when reflectivity R1 during normal temperature and heating is described as offset Δ R.
In addition, the left side 5 list diagram 5 of table 9 wavelength 400nm, 500nm, 600nm, 700nm, (A) normal temperature time reflectivity R1, (B) heat time reflectivity R2 and offset Δ R (difference with reflectivity R2 when reflectivity R1 during absolute value representation normal temperature and heating).In addition, wavelength during maximum offset Δ Rmax and the minimum offset Δ Rmin and Δ Rmax and Δ Rmin of the wavelength 400nm ~ 700nm representing Fig. 5 is respectively arranged on the right side 2 of table 9.
[table 9]
As shown in Fig. 5, table 9, content is known, and the drafting position in two-dimensional coordinate plane about the wavelength of light and the relation of reflectivity of alumina layer 21 is when normal temperature and almost do not change when heating.That is, each drafting position is close in the mode almost overlapped, and the offset Δ R of reflectivity R1, R2 during normal temperature and when heating is minimum.In addition, known in the wave band of above below the 700nm of wavelength 400nm, reflectivity is less than 0.50%, has anti-reflective function.
During the normal temperature of Fig. 5 and heating time the side-play amount of reflectivity specific as follows described in.When being conceived to the wave band as more than 400nm below the 700nm of visibility region, the side-play amount of reflectivity is maximum when wavelength is 400nm.And reflectivity R1 during normal temperature is 0.222%, on the other hand, reflectivity R2 during heating is 0.278%, and their difference (the offset Δ R of reflectivity during normal temperature and when heating) is 0.056%.In addition, the minimum situation of offset Δ R is wavelength when being 670nm and 680nm, during normal temperature and heating time the difference of reflectivity be 0%.In the wave band of more than 400nm below 700nm, for other wavelength, the difference of reflectivity during normal temperature and when heating belongs in the scope of minimum value 0% ~ maximal value 0.056%.That is, in the wave band of more than 400nm below 700nm, during normal temperature and heating time the offset Δ R of reflectivity R1, R2 be less than 0.30%, can say that alumina layer 21 is for evenly and closely film quality.In the optical thin film 20 of embodiment 2, do not produce irregular colour.In addition, can think and can give full play to anti-reflective function in visibility region.
(comparative example 2)
Particularly, in comparative example 2, define the following optical thin film with anti-reflective function.
Table 10 represents that the film of the optical thin film of comparative example 2 is formed.In addition, table 11 represents the film formation condition of the optical thin film of comparative example 2.
[table 10]
[table 11]
Wherein, in order to compare with above-described embodiment 2, comparative example 2 is described.Fig. 6 is the key diagram about the comparative example 2 as the comparison other with embodiments of the invention 2.In comparative example 2, use vacuum deposition method, define following optical thin film.
The optical element base material 10 of optical element 1 is used as the M-BACD12 (HOYA Corp.'s system) of glass mold lens nitre kind.And, the optical surface 5 of this optical element base material 10 is formed the optical thin film with 4 Rotating fields of anti-reflective function.
That is, the 1st layer ~ the 4th layer of optical thin film is the Al of stacked physical film thickness 59.66nm in order 2o 3the Al of layer, physical film thickness 91.84nm 2o 3the ZrO of layer, physical film thickness 115.58nm 2+ TiO 2the MgF of layer, physical film thickness 89.43nm 2the repetitive structure portion that layer is formed.Form the 1st layer ~ the 4th layer of this repetitive structure portion according to following condition film forming.
As the O of the importing gas in membrane forming process room 2gas flow, at the Al of the 1st layer 2o 3layer and the ZrO of the 3rd layer 2+ TiO 2be 15SCCM during layer, at the Al of the 2nd layer 2o 3be 13SCCM during layer.In addition, if the temperature as the optical element base material 10 of film forming handling object thing is 250 DEG C.In addition, Al 2o 3, ZrO 2+ TiO 2, MgF 2velocity of evaporation (rate of film build) be respectively 0.80nm/sec.
Fig. 6 represents the result optical thin film according to above condition film forming being measured to the wavelength of light and the relation of light reflectance.In addition, in table 12, the left side 5 list diagram 6 of table 12 wavelength 400nm, 500nm, 600nm, 700nm, (A) normal temperature time reflectivity R1 (not shown in Fig. 6), (B) heat time reflectivity R2 (not shown in Fig. 6) and offset Δ R (difference with reflectivity R2 when reflectivity R1 during absolute value representation normal temperature and heating).In addition, the wavelength when the right column of table 12 represents maximum offset Δ Rmax and the Δ Rmax of the wavelength 400nm ~ 700nm of Fig. 6.
[table 12]
Known, for the wavelength of the light shown in Fig. 6 and table 12 and the relation of reflectivity, there is a great difference the drafting position in two-dimensional coordinate plane when normal temperature and when heating.During the normal temperature of Fig. 6 and heating time the offset Δ R of reflectivity specific as follows described in.In the wave band of more than 400nm below the 700nm as visibility region, the offset Δ R of reflectivity is maximum when wavelength is 400nm.When wavelength is 400nm, reflectivity R1 during normal temperature is 0.350%, and on the other hand, reflectivity R2 during heating is 0%, and their difference (offset Δ R) is 0.350%.That is, in the wave band of more than 400nm below 700nm, the maximal value of offset Δ R is the bigger numerical more than 0.30%, and non-homogeneous and film quality closely.The generation of irregular colour can be found at the optical thin film 20 of comparative example 2, cannot say and fully can play anti-reflective function in visibility region.
(embodiment 3 ~ embodiment 5)
Then, embodiment 3 ~ embodiment 5 is described.In embodiment 3 ~ embodiment 5, for the content illustrated in example 2, omit the description, describe the content different from embodiment 2.
In embodiment 3 ~ embodiment 5, first common explanation is described.In embodiment 3 ~ embodiment 5, although do not illustrate the result of the heating as embodiment 1 and 2, but inventor etc. think do not produce irregular colour in embodiments shown below, thus can apply the present invention.
In embodiment 3 ~ embodiment 5, optical element base material 10 employs M-LAC130 (HOYA Corp.'s system).In addition, table 13,15,17 represents that the film of the optical thin film 20 of each embodiment is formed.In addition, table 14,16,18 represents the film formation condition of the optical thin film 20 of each embodiment.Fig. 7 ~ Fig. 9 is the key diagram of the wavelength of light of the optical thin film drawing each embodiment in two-dimensional coordinate plane and a concrete example of the relation of light reflectance.In addition, same with above-described embodiment, the optical thin film 20 of embodiment 3 ~ embodiment 5 has anti-reflective function.It should be noted that, in each table, also omit the explanation to duplicate contents.
(embodiment 3)
In embodiment 3, change the physical film thickness d of the alumina layer of the 1st layer, except the 1st layer, also form the 3rd layer and the 5th layer by alumina layer.In addition, as film constituent material, SiO is not used 2, and pass through Ta 2o 5form the 2nd, 4,6 layer.
[table 13]
[table 14]
The wavelength of light and the relation of light reflectance are measured to the optical thin film 20 obtained according to above membrance casting condition film forming, the result shown in Fig. 7 can be obtained.Measurement result according to Fig. 7, knownly at least can suppress lower by reflectivity in the wavelength region may of more than 400nm below the 700nm as visibility region.In addition, unconfirmed to irregular colour in the optical thin film 20 of embodiment 3.
In addition, according to this result, known alumina layer 21 not only can be formed as the 1st layer, can also be formed as the 3rd layer and the 5th layer, can change physical film thickness d.
(embodiment 4)
In example 4, by using the alumina layer of the IAD film forming the 1st layer of RF stimulable type electron gun.In addition, the number of plies of optical thin film 20 is changed to 10 layers from 8 layers.
[table 15]
[table 16]
The wavelength of light and the relation of light reflectance are measured to the optical thin film 20 obtained according to above membrance casting condition film forming, the result shown in Fig. 8 can be obtained.Measurement result according to illustrated example, knownly at least suppresses lower by reflectivity in the wavelength region may of more than 400nm below the 700nm as visibility region.In addition, unconfirmed to irregular colour in the optical thin film 20 of embodiment 4.
In addition, according to this result, for alumina layer 21, if formed the film forming process of particle by the ion energy accumulating film of more than 10eV, then high frequency discharge excited type electron gun can be used.In addition, the number of plies confirming optical thin film 20 is not limited to 8 layers, can be multilayer.
(embodiment 5)
In embodiment 5, the physical film thickness D-shaped of the alumina layer 21 of the 1st layer is become thicker and the number of plies of optical thin film 20 is changed to 10 layers from 8 layers.
[table 17]
[table 18]
The wavelength of light and the relation of light reflectance are measured to the optical thin film 20 obtained according to above membrance casting condition film forming, the result shown in Fig. 9 can be obtained.Measurement result according to illustrated example, knownly at least suppresses lower by reflectivity in the wavelength region may of more than 400nm below the 700nm as visibility region.In addition, unconfirmed to irregular colour in the optical thin film 20 of embodiment 5.
In addition, according to this result, the physical film thickness d of alumina layer 21 can be increased.
(brief summary)
Investigate the result of the above embodiment 1 ~ 5 enumerated and comparative example 1 and 2, comprise Al according to embodiment 1 ~ 5 2o 3the optical thin film 20 of layer 21, then Al 2o 3layer 21 is evenly and closely film quality, thus when optical surface 5 of coated optical device substrate 10, can not produce irregular colour, can realize good anti-reflective function.
< 4. the 1st embodiment and 2 effect >
According to the optical thin film 20 illustrated in the 1st and the 2nd embodiment, the effect of the following stated can be obtained.
According to the 1st and the 2nd embodiment, form alumina layer 21 by the film forming process and IAD being formed particle with the ion energy accumulating film of more than 10eV, this alumina layer 21 has uniform film quality.That is, alumina layer 21 has following membrane structure, and namely in the Same Wavelength of the wavelength region may of more than 400nm below 700nm, the offset Δ R of the 2nd reflectivity R2 when the 1st reflectivity R1 during normal temperature and heating is less than 0.30%.
Therefore, the alumina layer 21 of the 1st and the 2nd embodiment has evenly and the closely film quality that there is the leeway that sucks moisture etc. hardly, thus effectively can prevent the suction of the moisture of the generation essential factor as irregular colour etc.Therefore, when locating the situation of alumina layer 21 in the mode of the optical surface 5 of contact optical device substrate 10 or alumina layer 21 being formed as the 2nd layer ~ m layer, the irregular colour of the essential factor of the yield rate reduction that may cause optical element 1 etc. can not be produced.Therefore, it is possible to correct the degree of irregularity of the optical characteristics (such as refractive index n or transmittance) in the face of the optical surface 5 that irregular colour causes.That is, according to the present embodiment, even if the optical thin film for comprising alumina layer 21, the optical thin film 20 that can not produce irregular colour can also be obtained.
In addition, according to the 1st and the 2nd embodiment, making by using the formation of IAD alumina layer 21 have " evenly and closely film quality ", therefore about the refractive index n of this alumina layer 21, the higher refractive index of less than more than 1.64 1.70 can be realized.That is, this higher refractive index is because alumina layer 21 is for having the membrane structure of uniform film quality and obtaining.Therefore, by realizing the alumina layer 21 of this high index, also can avoid becoming the generation of the irregular colour of the essential factor of the yield rate reduction causing optical element 1 etc.
< 5. variation >
Be explained above the 1st and the 2nd embodiment, but above-mentioned disclosed content representation illustrative embodiment of the present invention.That is, technical scope of the present invention is not limited to above-mentioned illustrative embodiment.
In the above-described embodiment, when the formation of alumina layer 21, as the film forming process being formed particle with the ion energy accumulating film of more than 10eV, illustrate the situation of carrying out IAD.But, as long as formed the process of particle with the ion energy accumulating film of more than 10eV for the formation of the film forming process of alumina layer 21, can be such as based on the such IAD of sputtering beyond the film forming process of gimmick.
In addition, in above-mentioned 2nd embodiment, for each layer of the 2nd layer ~ m layer of formation optical thin film 20, the situation using IAD to be formed is illustrated.But, as long as be at least film forming process alumina layer being formed to particle with the ion energy accumulating film of more than 10eV for the formation of the film forming process of each layer, other layers are not particularly limited to.
In addition, in above-mentioned 2nd embodiment, as the film formation step of optical thin film 20, the situation of film forming the 1st layer to the 8th layer in order or the 10th layer is illustrated.But optical thin film 20 can not be formed by the film formation step illustrated in the above-described embodiment, but is formed independent of the optical element base material 10 of optical element 1.In this case, the optical thin film 20 formed independent of optical element base material 10 is attached on the optical surface 5 of optical element base material 10, thus coated optical face 5.
In addition, in the above-mentioned 1st and the 2nd embodiment, illustrate that optical element is optical glass lens, be coated with the situation of the optical surface 5 of the lens substrate of this optical glass lens by antireflection film.But the optical elements such as the such as spherical glass lens beyond optical glass lens, aspherical glass lens, optical color filter, diffraction grating also can apply the present invention in the same manner as above-mentioned embodiment.
In addition, in the above-mentioned 1st and the 2nd embodiment, as center wave band, the wave band enumerating visible ray is routine as one, by wavelength region may with more than 400nm below 700nm (central wavelength lambda 0for 550nm) be illustrated, but be not limited thereto.Such as, center wave band can be set as in the scope of more than 200nm below 2000nm, as visible region, can be set as the scope of more than 380nm below 780nm, can be preferably set to the scope of more than 400nm below 700nm.In addition, center wave band can also be set as the scope (ultraviolet region) of more than 200nm below 380nm.In addition, center wave band can also be set as the scope (region of ultra-red) of more than 780nm below 2000nm.It should be noted that, in the scope of the wave band of setting, suitably can set central wavelength lambda 0, when the scope of setting center wave band as more than 400nm below 700nm, preferably by central wavelength lambda 0be set as 550nm.
In addition, use above-mentioned formula (1), represent the calculated example of the optical thin film coefficient x of embodiment 1.
(calculated example of embodiment 1)
Through type (1) and table 1, calculate the calculated example of the optical thin film coefficient x of embodiment 1.
1. wave band is set as more than 400nm below 700nm, by the central wavelength lambda of the wave band of setting 0be set to 550nm.
2. then, specify refractive index n and physical film thickness d.In embodiment 1, n=1.6745, d=92.91.
3. the numerical value of regulation in above-mentioned 1,2 is substituted into above-mentioned formula (1), obtain the value (x=1.131) of optical thin film coefficient x.
In addition, in the above-mentioned the 1st and the 2nd embodiment, illustrate optical thin film 20, but be not limited thereto.The present application can also be applied to the optical thin film of IR optical filter, UV optical filter etc.
In addition, in above-mentioned 1st embodiment, illustrate that offset Δ R is the situation of less than 0.50%, but be not limited thereto.Offset Δ R also can be less than 0.30%, in addition, can be preferably less than 0.20%.And then can more preferably make offset Δ R be less than 0.10%, can also less than 0.070% be.
In addition, in above-mentioned 2nd embodiment, illustrate that offset Δ R is the situation of less than 0.30%, but be not limited thereto.Offset Δ R can be less than 0.20%, in addition, can be preferably less than 0.15%.And then, more preferably make offset Δ R be less than 0.10%, can also less than 0.070% be.
In addition, by the membrance casting condition of above-described embodiment 1, the alumina layer 21 that flat glass substrate 10 has been the mode film forming of 89nm with physical film thickness, uses following condition, film density that device determines this alumina layer 21.
Film density is measured by high de-agglomeration energy rutherford back scattering analysis method, use high de-agglomeration energy RBS (RutherfordBackscatteringSpectrometry: Rutherford backscattering spectroscopic methodology) analytical equipment (god Kobe Zhi Gangsuo society of Co., Ltd. system).
The result measuring the film density of the alumina layer 21 as above obtained is that film density is 2.93g/cm 3.
In addition, in the above embodiments 2 ~ 5, describe the example be set to by alumina layer on the 1st layer, but be not limited thereto.Alumina layer can be configured to any layer in the 2nd layer ~ m layer.
In addition, in the above embodiments 3, describe and alumina layer is set to the 1st, 3,5 layer of this example of 3 layers, but be not limited thereto.Alumina layer also can be set to the 2nd, 4 layer these 2 layers, can also arrange more than 4 layers.In addition, alumina layer such as can be arranged according to the 2nd, 3 layer of continuous print mode.
Finally, accompanying drawing etc. is used to summarize the of the present invention 1st and the 2nd embodiment.
As shown in Figure 1 and Figure 4, the optical element 1 of embodiments of the present invention has optical thin film 20.Optical thin film 20 has alumina layer 21, and this alumina layer 21 is using aluminium oxide as principal ingredient and have according to blooming nd and central wavelength lambda 0regulation less than more than 0.010 2.00 the optical thin film coefficient of scope, in the Same Wavelength of center wave band, the offset Δ R of the 2nd reflectivity R2 when the 1st reflectivity R1 during normal temperature and heating is less than 0.50%.
In addition, preferably, blooming specifies according to refractive index n and physical film thickness d, and refractive index n is in the scope of 1.64 ~ 1.70.
In addition, it is further preferred that physical film thickness d is in the scope of more than 8.0nm below 500.0nm.
In addition, it is further preferred that optical thin film 20 is the monofilms be made up of alumina layer 21, offset Δ R is less than 0.10%.
In addition, more preferably, optical thin film 20 is multilayer films 21 ~ 28 that stacked more than 2 filmogens are formed, and multilayer film (21 ~ 28) comprises the silicon oxide layer (22,24,26) formed by monox and the tantalum oxide layers (23,25,27) formed by tantalum oxide.
In addition, can be understood as follows about other viewpoints.As shown in Figure 4, the optical thin film 20 of embodiments of the present invention has by the stacked sandwich construction formed of multilayer film (21 ~ 28), the optical surface 5 being configured at the device substrate 10 of optical element 1 uses, the 1st layer 21 of the side in the contact optical face 5 in multilayer film (21 ~ 28) is film forming process by being formed particle with the ion energy accumulating film of more than 10eV and the alumina layer 21 formed, alumina layer 21 has following membrane structure, its wavelength about light and the relation of light reflectance, in the front and back of heating being heated to the set point of temperature can removing moisture, be less than 0.50% in the maximal value of the change of the light reflectance of the wavelength region may of more than 400nm below 700nm.
In addition, preferably, the refractive index n of alumina layer 21 is less than more than 1.64 1.70.
In addition, more preferably, multilayer film (21 ~ 28), except having alumina layer 21, also has by low refractive index material layer (22,24 and 26) and the alternately laminated repetitive structure portion of high refractive index material layer (23,25 and 27).
In addition, can be understood as follows about other viewpoints.As shown in Figure 4, in the optical element 1 of embodiments of the present invention, by the optical surface 5 of optical thin film 20 coated components base material 10, optical thin film 20 has by the stacked sandwich construction formed of multilayer film (21 ~ 28), and the alumina layer 21 being the film forming process by being formed particle with the ion energy accumulating film of more than 10eV and being formed for the 1st of the side in the contact optical face 5 in multilayer film (21 ~ 28) the layer 21, alumina layer 21 has following membrane structure, its wavelength about light and the relation of light reflectance, in the front and back of heating being heated to the set point of temperature can removing moisture, be less than 0.50% in the maximal value of the change of the light reflectance of the wavelength region may of more than 400nm below 700nm.
In addition, preferred optical element 1 is made up of optical glass lens.
In addition, can be understood as follows about other viewpoints.As shown in Figure 4, the manufacture method of the optical thin film 20 of embodiments of the present invention is the manufacture method of following optical thin film 20, this optical thin film 20 has by the stacked sandwich construction formed of multilayer film (21 ~ 27), and the optical surface 5 being configured at the device substrate 10 of optical element 1 uses, this manufacture method has the 1st layer of film formation process, as the 1st layer 21 of the side in the contact optical face 5 in multilayer film (21 ~ 27), alumina layer 21 is formed by the film forming process being formed particle with the ion energy accumulating film of more than 10eV, the alumina layer 21 formed in the 1st layer of film formation process has following membrane structure, its wavelength about light and the relation of light reflectance, in the front and back of heating being heated to the set point of temperature can removing moisture, be less than 0.50% in the maximal value of the change of the light reflectance of the wavelength region may of more than 400nm below 700nm.
In addition, can be understood as follows about other viewpoints.As shown in Figure 4, the manufacture method of the optical element 1 of embodiments of the present invention is the manufacture method utilizing the optical surface 5 of optical thin film 20 pairs of device substrates 10 to be coated with the optical element 1 obtained, its manufacture method has optical thin film film formation process, wherein, the optical thin film 20 had by the stacked sandwich construction formed of multilayer film (21 ~ 28) is formed on optical surface 5; Optical thin film film formation process comprises the 1st layer of film formation process, wherein, form alumina layer 21 by the film forming process being formed particle with the ion energy accumulating film of more than 10eV, it can be used as the 1st layer 21 of the side in the contact optical face 5 in multilayer film (21 ~ 28); The alumina layer 21 formed in the 1st layer of film formation process has following membrane structure, its wavelength about light and the relation of light reflectance, in the front and back of heating being heated to the set point of temperature can removing moisture, be less than 0.50% in the maximal value of the change of the described light reflectance of the wavelength region may of more than 400nm below 700nm.
The all the elements of embodiment disclosed in this instructions be only example and and be not used to limit the present invention.Scope of the present invention is not limited to above-mentioned explanation but is illustrated by claims, and it comprises all changes in the meaning and scope that are equal to the scope of claims.
Symbol description
1 ... optical element
5 ... optical surface
10 ... optical element base material
20 ... optical thin film
21 ... alumina layer
22,24,26 ... low refractive index material layer
23,25,27 ... high refractive index material layer
N ... refractive index
D ... physical film thickness
X ... optical thin film coefficient
λ 0centre wavelength
R1 ... 1st reflectivity
R2 ... 2nd reflectivity
Δ R ... side-play amount.

Claims (4)

1. an optical element, it has optical thin film, wherein,
Described optical thin film has alumina layer, and this alumina layer is principal ingredient with aluminium oxide and has the optical thin film coefficient of scope according to less than more than 0.010 2.00 of blooming and centre wavelength regulation,
Described blooming specifies according to refractive index and physical film thickness,
Described refractive index is the scope of less than more than 1.64 1.70,
Described physical film thickness is the scope of more than 8.0nm below 500.0nm,
In the Same Wavelength of the wavelength region may of the light of more than 400nm below 700nm, the 1st light reflectance during the normal temperature of described alumina layer and can remove moisture set point of temperature under heating time the maximal value of side-play amount of the 2nd light reflectance be less than 0.50%.
2. optical element as claimed in claim 1, wherein,
Described optical thin film is the monofilm be made up of described alumina layer,
The maximal value of described side-play amount is less than 0.10%.
3. optical element as claimed in claim 1 or 2, wherein,
Described optical thin film be by stacked for the filmogen of more than 2 and formed multilayer film,
Described multilayer film comprises:
Silicon oxide layer, it is formed by monox; With
Tantalum oxide layers, it is formed by tantalum oxide.
4. optical element as claimed in claim 1 or 2, wherein,
Described optical element possesses optical element base material further,
Described optical thin film is arranged on described optical element base material,
Described optical element base material is optical glass lens.
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