CN104313542B - ITO layer and the manufacture method of ITO pattern, display base plate and display device - Google Patents
ITO layer and the manufacture method of ITO pattern, display base plate and display device Download PDFInfo
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- CN104313542B CN104313542B CN201410575788.9A CN201410575788A CN104313542B CN 104313542 B CN104313542 B CN 104313542B CN 201410575788 A CN201410575788 A CN 201410575788A CN 104313542 B CN104313542 B CN 104313542B
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- oxide layer
- indium tin
- tin oxide
- indium
- pattern
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides the manufacture method of a kind of indium tin oxide layer, the method is by using magnetron sputtering technique depositing indium tin oxide layer on underlay substrate under base vacuum environment, the work gas of described magnetron sputtering technique is argon, during deposited amorphous indium tin oxide layer, being passed through water in base vacuum environment and form steam, the speed being passed through water is Q2*TITO/ 10000* (1 ± 20%) sccm；Wherein, Q2 represents when unit is sccm, the numerical value corresponding to the flow of the argon being passed through in base vacuum environment；TITORepresent when unit is μm, need the numerical value of the thickness of the indium tin oxide layer of deposition.Use the manufacture method that the present invention provides, it is possible to be substantially reduced the polycrystallization degree of made indium tin oxide layer.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to the system of a kind of ITO layer, ITO pattern
Make method, display base plate and display device.
Background technology
Tin indium oxide (ITO) film has excellent electric conductivity and transmission of visible light, is a kind of weight
The nesa coating wanted, is widely applied in the opto-electronic device.Prepare indium oxide tin film
There is multiple method.The most general magnetron sputtering method used, specifically, it is simply that in low pressure
Environment carries out shock to work gas and obtains plasma (orifice) gas, then use plasma (orifice) gas to target
Surface bombard, make atom sputtering on target to substrate.Magnetron sputtering method includes
Direct current magnetron sputtering process and radio frequency sputtering method, depositing indium tin oxide film generally uses direct magnetic control
Sputtering method.
The performance that indium oxide tin film is had makes it obtain extensively should in flat-panel display device
With, the indium oxide coating obtaining high transmission rate is pursued by industry always.Prepare oxygen at present
Change indium stannum film typically uses and improves substrate temperature, the method for increase film thickness, but high temperature
The thick indium tin oxide films crystal grain of lower deposition can be grown up or form column structure, causes oxygen
Change the polycrystallization of indium stannum film.The transmitance of such indium oxide tin film is the highest.And due to big chi
The existence of very little indium tin oxide films crystal grain causes this indium oxide tin film well not carved
Erosion, the tin indium oxide pattern by such tin indium oxide film production is the most short-circuit, thus causes
There is fleck defect in corresponding display floater.
Summary of the invention
It is an object of the invention to provide the manufacture method of a kind of indium tin oxide layer, made to reduce
The polycrystallization degree of the indium tin oxide layer made.
In order to achieve the above object, the invention provides the manufacture method of a kind of indium tin oxide layer,
The method deposits on underlay substrate by using magnetron sputtering technique under base vacuum environment
Indium tin oxide layer, the work gas of described magnetron sputtering technique is argon, it is characterised in that heavy
During long-pending indium tin oxide layer, in base vacuum environment, it is passed through water forms steam, be passed through
The speed of water is Q2*TITO/ 100000* (1 ± 20%) sccm；
Wherein, Q2 represents when unit is sccm, the argon being passed through in base vacuum environment
The numerical value corresponding to flow；TITORepresent when unit be angstrom, need the tin indium oxide deposited
The numerical value of the thickness of layer.
Further, described method is more than or equal to the Indium sesquioxide. of 700 angstroms specifically for deposit thickness
Tin layers.
Further, described method specifically for the indium tin oxide layer that deposit thickness is 700 angstroms,
Q2 is specially 100 ± 10sccm, Q1 and is specially 0.7 ± 0.1.
Further, described method specifically for the indium tin oxide layer that deposit thickness is 1350 angstroms,
Q2 is specially 100 ± 10sccm, Q1 and is specially 1.2 ± 0.2.
The invention provides the manufacture method of a kind of tin indium oxide pattern, including:
Indium tin oxide layer made by the manufacture method of above-mentioned indium tin oxide layer is provided；
Described indium tin oxide layer is patterned；
Indium tin oxide layer after patterning is annealed.
Further, described described indium tin oxide layer carried out patterning include:
Indium tin oxide layer coats photoresist；
Use mask plate that described photoresist is exposed development, formed and include retaining region and non-
Retain the photoetching agent pattern in region；
The indium tin oxide layer that unreserved region is corresponding is performed etching.
The invention provides a kind of display base plate, including the method system utilized described in any of the above-described item
The tin indium oxide pattern made.
The invention provides a kind of display device, it is characterised in that include above-mentioned display base plate.
In the manufacture method of the amorphous oxide indium tin layer that the present invention provides, in base vacuum environment
It is passed through water and forms steam, and the amorphous oxide indium stannum that the flow of the water being passed through makes as required
The thickness of layer is determined.Use the manufacture method that the present invention provides, it is possible to be substantially reduced made
The polycrystallization degree of amorphous oxide indium tin layer.
Accompanying drawing explanation
The flow process signal of the manufacture method of the tin indium oxide pattern that Fig. 1 provides for the embodiment of the present invention
Figure；
Fig. 2 is the schematic flow sheet of a kind of preferred implementation of step S2 in Fig. 1；
Fig. 3 a is different joints in the tin indium oxide pattern utilizing the process conditions of prior art to make
The test value of the resistance between point；
Fig. 3 b is the electricity in the tin indium oxide pattern utilizing the method for Fig. 1 to make between different nodes
The test value of resistance；
The tin indium oxide pattern that thickness is 1350 angstroms that Fig. 4 a makes under different discharges saturating
Cross the cartogram of rate and resistance value；
Passing through of the tin indium oxide pattern that thickness is 700 angstroms that Fig. 4 b makes under different discharges
Rate and the cartogram of sheet resistance value；
Passing through of the tin indium oxide pattern that thickness is 400 angstroms that Fig. 4 c makes under different discharges
Rate and the cartogram of sheet resistance value.
Detailed description of the invention
Below in conjunction with the accompanying drawings and embodiment, the detailed description of the invention of the present invention is retouched further
State.Following example are only used for clearly illustrating technical scheme, and can not be with
This limits the scope of the invention.
During realizing the present invention, it has been found that use magnetic under base vacuum environment
Control sputtering technology on underlay substrate depositing indium tin oxide layer (work gas of magnetron sputtering technique is
Argon) during, vacuum environment is passed through different discharge, can affect made
The polycrystallization degree of indium tin oxide layer.And when made indium tin oxide layer is bigger, Ke Yitong
Cross that to set the polycrystallization degree that bigger discharge makes made ITO layer less.Phase
Answer, when made indium tin oxide layer is less, can be by setting a less discharge
The polycrystallization degree making made indium tin oxide layer is less.
On this basis, present inventor devises the making side of a kind of amorphous oxide indium tin layer
Method, the method, during deposited amorphous indium tin oxide layer, is passed through in base vacuum environment
Water forms steam, and the speed being passed through water is Q1=Q2*TITO/ 100000* (1 ± 20%) sccm；
Wherein, Q2 represents when unit is sccm, the stream of the argon being passed through in base vacuum environment
Numerical value corresponding to amount；TITORepresent when unit be angstrom, need the amorphous oxide indium stannum deposited
The numerical value of the thickness of layer.
Same discharge all it is passed through with the indium tin oxide layer making any thickness in prior art
Mode is compared, and the manufacture method of the amorphous oxide indium tin layer that the present invention provides enables to be deposited
The polycrystallization degree of amorphous oxide indium tin layer minimum.Further, find through experiment, utilize this
The manufacture method of the indium tin oxide layer of bright offer enables to deposited amorphous oxide indium tin layer
There is relatively low sheet resistance value.
Further, the manufacture method of the amorphous oxide indium tin layer that the present invention provides is specifically for heavy
The long-pending thickness indium tin oxide layer more than or equal to 700 angstroms.
According to above-mentioned formula it can be seen that now Q1 should be at 0.07* (1 ± 20%) Q2
In the range of.
Further, described method specifically for the indium tin oxide layer that deposit thickness is 700 angstroms,
Q2 is specially 100, and Q1 is specially 0.7 ± 0.1.It is furthermore preferred that described method is specifically for heavy
When long-pending thickness is the indium tin oxide layer of 700 angstroms, Q2 is 100, and Q1 is 0.8.
Further, described method specifically for the indium tin oxide layer that deposit thickness is 1350 angstroms,
Q2 is specially 100, and Q1 is specially 1.2 ± 0.2.It is furthermore preferred that described method is specifically for heavy
When long-pending thickness is the indium tin oxide layer of 1350 angstroms, Q2 is 100, and Q1 is 1.35.
In the prior art, the discharge being passed in vacuum environment is generally below 0.6sccm,
If extending sputtering time under such discharge to make the tin indium oxide more than or equal to 700 angstroms
Layer, will cause made indium tin oxide layer polycrystallization serious, therefore, it is difficult to it is non-to realize high thickness
The product line metaplasia of brilliant indium tin oxide layer is produced.In the embodiment of the present invention, at the amorphous making 700 angstroms
When the flow of indium tin oxide layer and argon is 100sccm, discharge is set to 0.7 ±
0.1sccm, when the flow of the indium tin oxide layer argon that making thickness is 1350 angstroms is 100sccm
Time, discharge is set to 1.2 ± 0.2sccm, made non-under such process conditions
Brilliant indium tin oxide layer, the degree of polycrystallization is smaller.The amorphous oxide indium tin layer that the present invention provides
Manufacture method be suitable to high thickness amorphous oxide indium tin layer product line metaplasia produce.
Further, sputtering technology of the present invention specifically refers to magnetron sputtering technique.
Present invention also offers the manufacture method of a kind of tin indium oxide pattern, the method such as Fig. 1 institute
Show:
Step S1, it is provided that the method depositing indium tin oxide layer described in any of the above-described item；
Step S2, patterns described indium tin oxide layer；
Step S3, anneals to the indium tin oxide layer after patterning.
The indium tin oxide layer provided in step sl is the indium tin oxide layer of amorphous, the oxidation of amorphous
Indium tin layer is adapted for Patternized technique (such as etching), but membrane stress aoxidizes not as polycrystalline
Indium tin layer.So upon step s 2, the indium tin oxide layer after patterning is annealed,
Form the tin indium oxide pattern of polycrystalline.
The manufacture method of the tin indium oxide pattern that the present invention provides enables to made oxidation
Indium stannum pattern has higher transmitance and avoids the short circuit in made tin indium oxide pattern
Phenomenon.
Further, above-mentioned step S2 can include as shown in Figure 2:
Step S21, coats photoresist on indium tin oxide layer；
Step S22, uses mask plate that described photoresist is exposed development, is formed and includes protecting
Stay the photoetching agent pattern of region and unreserved region；
Step S23, performs etching the indium tin oxide layer that unreserved region is corresponding.
As shown in Figure 3 a, the tin indium oxide pattern for utilizing the process conditions of prior art to make exists
The test value of the resistance value of different nodes.Visible, in the tin indium oxide pattern of the 2nd panel
Between node COM and S8, between node S8 and S7, between node S7 and S4, node S4 with
Resistance value between S1, between node S5 and S3, between node S9 and S8, and at the 3rd
In resistance value between tin indium oxide pattern interior joint S7 and S4 of panel, the 4th panel
Between COM and S8, between node S4 and S1, between node S2 and S5, in the 5th panel
Resistance value between COM and S8, between node S6 and S9, between node S9 and S8 is K
(thousand) level, hence it is evident that less than between other nodes resistance value (other nodes are M (million) level,
Or G (gigabit) level), illustrate that these nodes exist short circuit.Such defect is usually all
With during deposited amorphous tin indium oxide, define polycrystalline particle, follow-up in making oxidation
Can not well etch during indium stannum pattern, cause short circuit between two nodes, resistance value is on the low side.
As shown in Figure 3 b, for utilizing tin indium oxide pattern that the method described in Fig. 1 makes at different nodes
The test value of resistance value.Visible, wherein the resistance value between any two points be all million grades or with
On, there is no short circuit phenomenon.
Fig. 4 a is when the flow of argon is 100sccm, the thickness made under different discharges
It is transmitance and the cartogram of resistance value of the tin indium oxide pattern of 1350 angstroms；It is seen that,
Discharge is in the range of 0-2sccm, the transmitance of tin indium oxide pattern with current quantitative change big and
Becoming big, but be the interval of 0.8-1sccm in discharge, the transmitance of tin indium oxide pattern is rapid
Promote, and in the interval of 1-2sccm, the sheet resistance value of tin indium oxide pattern with current quantitative change big and
Raising rapidly, transmitance rises the least.Discharge is set as 1-1.4sccm, it is possible to protect
Tin indium oxide pattern made by card has relatively low sheet resistance value and higher transmitance.
Fig. 4 b is when the flow of argon is 100sccm, and the thickness made under different discharges is
The transmitance of the tin indium oxide pattern of 700A and the cartogram of resistance value；It is not difficult to find out, at water
Flow is in the range of 0.8 ± 0.1sccm, and tin indium oxide pattern has relatively low sheet resistance value and relatively
High transmitance.Fig. 4 c is when the flow of argon is 100sccm, makes under different discharges
The transmitance of the tin indium oxide pattern that thickness is 400A made and the cartogram of resistance value；It is not difficult
Finding out, when discharge is about 0.4sccm, tin indium oxide pattern has relatively low sheet resistance value
Higher transmitance.
Present invention also offers a kind of display base plate, this display base plate includes utilizing any of the above-described item
The tin indium oxide pattern that described method makes.
Concrete, display base plate here can be the array base palte of liquid crystal indicator, or
The display base plate of tin indium oxide pattern, such as color membrane substrates etc. can also be had for other.
Present invention also offers a kind of display device, including the display base described in any of the above-described item
Plate.
Here display device can be: Electronic Paper, mobile phone, panel computer, television set, aobvious
Show any products with display function such as device, notebook computer, DPF, navigator or
Parts.
The above is only the preferred embodiment of the present invention, it is noted that lead for this technology
For the those of ordinary skill in territory, on the premise of without departing from the technology of the present invention principle, it is also possible to
Making some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (8)
1. a manufacture method for indium tin oxide layer, the method is by under base vacuum environment
Use magnetron sputtering technique depositing indium tin oxide layer on underlay substrate, described magnetron sputtering technique
Work gas be argon, it is characterised in that during depositing indium tin oxide layer, to background
Being passed through water in vacuum environment and form steam, the speed being passed through water is Q1=Q2*TITO/100000*
(1 ± 20%) sccm；
Wherein, Q2 represents when unit is sccm, the argon being passed through in base vacuum environment
The numerical value corresponding to flow；TITORepresent when unit be angstrom, need the tin indium oxide deposited
The numerical value of the thickness of layer.
2. the method for claim 1, it is characterised in that described method is specifically for heavy
The long-pending thickness indium tin oxide layer more than or equal to 700 angstroms.
3. method as claimed in claim 2, it is characterised in that described method is specifically for heavy
Long-pending thickness is the indium tin oxide layer of 700 angstroms, and Q2 is specially 100, and Q1 is specially 0.7 ± 0.1.
4. method as claimed in claim 2, it is characterised in that described method is specifically for heavy
Long-pending thickness is the indium tin oxide layer of 1350 angstroms, and Q2 is specially 100, and Q1 is specially 1.2 ± 0.2.
5. the manufacture method of a tin indium oxide pattern, it is characterised in that including:
The indium tin oxide layer that method described in any one of the claims 1-4 makes is provided；
Described indium tin oxide layer is patterned；
Indium tin oxide layer after patterning is annealed.
6. method as claimed in claim 5, it is characterised in that described to described tin indium oxide
Layer carries out patterning and includes:
Indium tin oxide layer coats photoresist；
Use mask plate that described photoresist is exposed development, formed and include retaining region and non-
Retain the photoetching agent pattern in region；
The indium tin oxide layer that unreserved region is corresponding is performed etching.
7. a display base plate, it is characterised in that described display base plate includes utilizing right to want
Seek the tin indium oxide pattern that the method described in 5 or 6 makes.
8. a display device, it is characterised in that include showing as claimed in claim 7 base
Plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410575788.9A CN104313542B (en) | 2014-10-24 | 2014-10-24 | ITO layer and the manufacture method of ITO pattern, display base plate and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410575788.9A CN104313542B (en) | 2014-10-24 | 2014-10-24 | ITO layer and the manufacture method of ITO pattern, display base plate and display device |
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| Publication Number | Publication Date |
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| CN104313542A CN104313542A (en) | 2015-01-28 |
| CN104313542B true CN104313542B (en) | 2016-09-28 |
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| CN108048796A (en) * | 2017-12-14 | 2018-05-18 | 君泰创新（北京）科技有限公司 | The preparation method of ito thin film |
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| KR100505536B1 (en) * | 2002-03-27 | 2005-08-04 | 스미토모 긴조쿠 고잔 가부시키가이샤 | Transparent conductive thin film, process for producing the same, sintered target for producing the same, and transparent, electroconductive substrate for display panel, and organic electroluminescence device |
| TWI371501B (en) * | 2004-03-29 | 2012-09-01 | Tadahiro Ohmi | Deposition apparatus and deposition method |
| CN1709689A (en) * | 2005-07-15 | 2005-12-21 | 深圳市豪威光电子设备有限公司 | ITo coated plate and its preparing method |
| JP2014034699A (en) * | 2012-08-08 | 2014-02-24 | Sumitomo Heavy Ind Ltd | Film manufacturing method |
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