CN104282840B - A kind of yellow organic electroluminescence device and preparation method thereof - Google Patents
A kind of yellow organic electroluminescence device and preparation method thereof Download PDFInfo
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- CN104282840B CN104282840B CN201410605256.5A CN201410605256A CN104282840B CN 104282840 B CN104282840 B CN 104282840B CN 201410605256 A CN201410605256 A CN 201410605256A CN 104282840 B CN104282840 B CN 104282840B
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
- H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
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- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
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- H—ELECTRICITY
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- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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Abstract
The invention provides a kind of yellow organic electroluminescence device, including substrate, anode layer, anode modification layer, hole transport electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier electron transfer layer, cathodic modification layer and the cathode layer for setting gradually；The leading luminescent layer of the electronics includes following components：The organic sensitized material of 0.05wt%~2.0wt%, the organic sensitized material is the transient metal complex of energy levels matching；The yellow luminous organic material of 0.5wt%~6.0wt%；The electron type organic host material of surplus.In the present invention, the organic sensitized material can play a part of carrier depth constraint center and energy transmission ladder, the distribution for being conducive to equilbrium carrier, luminous interval, the energy transmission that accelerates from material of main part to luminescent material of widening device, so as to the operating voltage for reducing the luminescent device, the efficiency and excitation that improve device.
Description
Technical field
The present invention relates to electroluminescent technology field, more particularly to a kind of yellow organic electroluminescence device and its preparation side
Method.
Background technology
Organic electroluminescence device is a kind of selfluminous element, when electric charge is injected into hole injecting electrode (anode) and electricity
During organic film between sub- injecting electrode (negative electrode), electronics and hole combine and then bury in oblivion, thus generation light.Organic electroluminescence is sent out
Optical device has the characteristics such as low-voltage, high brightness, wide viewing angle, therefore organic electroluminescence device has obtained swift and violent in recent years
Development.Wherein, yellow organic electroluminescence device due to being shown in signal, white light modulation etc. aspect application prospect, into
It is current study hotspot.
All the time, trivalent complex of iridium because have the advantages that luminous efficiency high adjustable with glow color and by academia
It is considered as preferable electroluminescent organic material with industrial circle, many research teams both domestic and external are from materials synthesis and device optimization side
Face is set about, the need for making great efforts to improve the combination property of yellow organic electroluminescence device to meet industrialization.For example, 2009
Year, the efficient complex of iridium (fbi) of Ma Dongge of Changchun Inst. of Applied Chemistry, Chinese Academy of Sciences et al. selections2Ir(acac)
As gold-tinted dyestuff, the yellow organic electroluminescence device that sandwich construction has been obtained in preferred material of main part is mixed.Should
Device has maximum luminous efficiency and high-high brightness higher, but the luminous efficiency of device is rapid with the raising of current density
Ground decay, and device complex structure, not only cause the cost of manufacture of device higher and be unfavorable for reduce device work electricity
Pressure.
In order to solve these problems, 2010, Hong Kong University Zhi Zhiming et al. synthesized a series of yellow platinum complex conducts
Luminescent material, designs and optimised devices structure, obtains the organic electroluminescence device with pure yellow emission.The device
Efficiency decay is necessarily alleviated, but device is still present operating voltage problem higher.
The content of the invention
It is an object of the invention to provide a kind of yellow organic electroluminescence device and preparation method thereof, what the present invention was provided
The operating voltage of yellow organic electroluminescence device is low.
The invention provides a kind of yellow organic electroluminescence device, including the substrate that sets gradually, anode layer, anode are repaiied
Decorations layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, the moon
Pole decorative layer and cathode layer；
The leading luminescent layer of the electronics is prepared by the material including following components：
The organic sensitized material of 0.05wt%~2.0wt%, the organic sensitized material is the transition of energy levels matching
Metal complex；
The yellow luminous organic material of 0.5wt%~6.0wt%；
The electron type organic host material of surplus.
Preferably, the organic sensitized material include double (4,6- difluorophenyl pyridinato-N, C2) pyridinecarboxylics close iridium and/or
Double (the fluoro- 2,3- bipyridyls of 4- tertiary butyls -2,6- two) acetyl acetone iridium.
Preferably, the electron type organic host material include 2,6- bis- [3- (9H-9- carbazyls) phenyl] pyridine, Isosorbide-5-Nitrae-
Double (tri-phenyl-silane base) benzene, 2,2 '-bis- (4- (9- carbazyls) phenyl) biphenyl, three [2,4,6- trimethyls -3- (3- pyridine radicals)
Phenyl] borine, 1,3,5- tri- [(3- pyridines) -3- phenyl] benzene, 1,3- double [3,5- bis- (3- pyridine radicals) phenyl] benzene, 1,3,5- tri-
Double (triphenyl the silicon substrate) -9H- carbazoles of (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene, 9- (4- t-butyl-phenyls) -3,6- and 9-
One or more in (8- diphenylphosphoryls)-hexichol azoles [b, d] furans -9H- carbazoles.
Preferably, the yellow luminous organic material includes (2- (9,9- diethyl-fluorenes -2- bases) -1- phenyl -1H- benzos
[d] imidazoles) acetyl acetone iridium, double (2- phenylbenzothiazols) (acetylacetone,2,4-pentanediones) close iridium, three [3- (2,6- xylenols
Base) -6- phenyl pyridazine] close iridium and double (2- phenylpyridines) (3- (pyridine -2- bases) -2H- chromen-2-ones) close in iridium one
Plant or several.
Preferably, the leading luminescent layer of the electronics includes the organic sensitized material of 0.1wt%~1.0wt%.
Preferably, the leading luminescent layer of the electronics includes the yellow luminous organic material of 1.0wt%~3.0wt%.
Preferably, the thickness of the leading luminescent layer of the electronics is 5nm~20nm.
Preferably, the leading luminescent layer in the hole is prepared by the material including following components：
The yellow luminous organic material of 0.5wt%~6.0wt%；
The cavity type organic host material of surplus.
Preferably, the yellow luminous organic material in the leading luminescent layer in the hole include it is double (2- (9,9- diethyl-fluorenes-
2- yls) -1- phenyl -1H- benzo [d] imidazoles) acetyl acetone iridium, double (2- phenylbenzothiazols) (acetylacetone,2,4-pentanediones) close iridium, three
[3- (2,6- dimethyl benzenes phenolic group) -6- phenyl pyridazine] closes iridium and double (2- phenylpyridines) (3- (pyridine -2- bases) -2H- benzo pyrroles
Mutter -2- ketone) close in iridium one or more.
Preferably, the cavity type organic host material includes 4,4 '-N, the N carbazole of '-two diphenyl, the carbazole -9- of 1,3- bis-
Base benzene, 9,9'- (5- (tri-phenyl-silane base) -1,3- phenyl) two -9H- carbazoles, 1,3,5- tri- (9- carbazyls) benzene, 4,4', 4 "
One or more in double (tri-phenyl-silane base) biphenyl of three (base of carbazole 9) triphenylamines and 1,4-.
Preferably, the thickness of the anode modification layer is 1nm~10nm；
The thickness of the hole transport-electronic barrier layer is 30nm~60nm；
The thickness of the leading luminescent layer in the hole is 5nm~20nm；
The thickness of the hole barrier-electron transfer layer is 30nm~60nm；
The thickness of the cathodic modification layer is 0.8nm~1.2nm；
The thickness of the cathode layer is 90nm~300nm.
The invention provides the preparation method of yellow organic electroluminescence device described in above-mentioned technical proposal, including following step
Suddenly：
Anode layer is set on substrate；
It is leading luminous that anode modification layer, hole transport-electronic barrier layer, hole are deposited with successively in the anode layer surface
Layer, electronics leading luminescent layer, hole barrier-electron transfer layer, cathodic modification layer and cathode layer, obtain yellow organic illuminator
Part.
Preferably, also include before anode layer surface evaporation anode modification layer：The substrate that anode layer will be provided with enters
The treatment of row low pressure plasma；
The time of the low pressure plasma treatment is 1min~10min.
Preferably, the anode layer surface be deposited with successively anode modification layer, hole transmission layer, the leading luminescent layer in hole,
The vacuum of the leading luminescent layer of electronics and hole barrier-electron transfer layer is 1 × 10-5Pa~2 × 10-5Pa；
The vacuum of the evaporation cathode decorative layer and cathode layer is 4 × 10-5Pa~6 × 10-5Pa。
The invention provides a kind of yellow organic electroluminescence device, including the substrate that sets gradually, anode layer, anode are repaiied
Decorations layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, the moon
Pole decorative layer and cathode layer；The leading luminescent layer of the electronics includes following components：0.05wt%~2.0wt%'s has Smart material
Material, the organic sensitized material is the transient metal complex of energy levels matching；The yellow of 0.5wt%~6.0wt% is organic
Luminescent material；The electron type organic host material of surplus.The leading hair of electronics in the yellow organic luminescent device that the present invention is provided
Mixed with organic sensitized material in photosphere, the organic sensitized material can play a part of carrier constraint center deeply, be conducive to
The distribution of equilbrium carrier, the luminous interval for widening device, so as to reduce the operating voltage of the luminescent device.And the present invention
The yellow organic electroluminescence device of offer also has luminous efficiency higher, and efficiency decay is slow, with the work longevity higher
Life.Test result indicate that, the bright voltage of the yellow organic electroluminescence device that the embodiment of the present invention is obtained is in 3.0V or so；Most
High current efficiency is in 80.00cd/A or so；Maximum power efficiency is in 80.00lm/W or so；The high-high brightness of device is reachable
72713cd/m2。
And, in the present invention, the organic sensitized material can also play a part of energy transmission ladder, so as to accelerate
Energy transmission from material of main part to luminescent material, alleviates material of main part hair caused by luminescent material carrier capture scarce capacity
Optical issue so that the yellow organic electroluminescence device that the present invention is provided has excitation higher.And present invention offer
The spectrum stability of electroluminescent device is high, and its luminescent properties is relatively low to the dependence of luminescent material doping concentration.Experimental result
Show, under the driving of forward voltage, the yellow organic electroluminescence device that the embodiment of the present invention is obtained can send 563nm's
Gold-tinted；And with the change of operating voltage, chromaticity coordinates is almost unchanged.
Brief description of the drawings
Fig. 1 is the structural representation of yellow organic electroluminescence device provided in an embodiment of the present invention；
Fig. 2 is the voltage-current density-light characteristic of the yellow organic electroluminescence device that the embodiment of the present invention 1 is obtained
Curve；
Fig. 3 is the current density-power efficiency-electric current of the yellow organic electroluminescence device that the embodiment of the present invention 1 is obtained
Efficiency characteristic device；
Fig. 4 is that the yellow organic electroluminescence device that the embodiment of the present invention 1 is obtained is 20000cd/m in brightness2When light
Spectrogram.
Specific embodiment
The invention provides a kind of yellow organic electroluminescence device, including the substrate that sets gradually, anode layer, anode are repaiied
Decorations layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, the moon
Pole decorative layer and cathode layer；
The leading luminescent layer of the electronics includes following components：
The organic sensitized material of 0.05wt%~2.0wt%, the organic sensitized material is the transition of energy levels matching
Metal complex；
The yellow luminous organic material of 0.5wt%~6.0wt%；
The electron type organic host material of surplus.
It is described mixed with organic sensitized material in the leading luminescent layer of electronics in the yellow organic luminescent device that the present invention is provided
Organic sensitized material can play a part of carrier constraint center deeply, be conducive to the distribution of equilbrium carrier, widen device
Luminous interval, so as to reduce the operating voltage of the luminescent device.And the yellow organic electroluminescence device that the present invention is provided
Also there is luminous efficiency higher, efficiency decay is slow, with working life higher.
And, in the present invention, the organic sensitized material can also play a part of energy transmission ladder, so as to accelerate
Energy transmission from material of main part to luminescent material, alleviates material of main part hair caused by luminescent material carrier capture scarce capacity
Optical issue, so that the yellow organic electroluminescence device that the present invention is provided has excitation higher.And the present invention is carried
The spectrum stability of the electroluminescent device of confession is high, and its luminescent properties is relatively low to the dependence of luminescent material doping concentration.
Referring to Fig. 1, Fig. 1 is the structural representation of yellow organic electroluminescence device provided in an embodiment of the present invention, wherein 1
For substrate, 2 be anode layer, 3 be anode modification layer, 4 be hole transport-electronic barrier layer, 5 be the leading luminescent layer in hole, 6 be electricity
The leading luminescent layer of son, 7 be hole barrier-electron transfer layer, 8 be cathodic modification layer, 9 be cathode layer.
The yellow organic electroluminescence device that the present invention is provided includes substrate.Material and source of the present invention to the substrate
There is no special limitation, the substrate as electroluminescent device is known using those skilled in the art.In reality of the invention
Apply in example, the substrate is preferably glass substrate, quartz substrate, multicrystalline silicon substrate, monocrystalline substrate or graphene film.
The yellow organic electroluminescence device that the present invention is provided includes anode layer, and the anode layer is arranged on the substrate
On.The present invention does not have special limitation to the material of the anode layer and source, is used for using well known to those skilled in the art
Anode layer in electroluminescent device.In the present invention, the material for preparing the anode layer is preferably indium tin oxide
(ITO)；The face resistance of the indium tin oxide is preferably 5 Ω~25 Ω, most preferably more preferably 5 Ω~10 Ω, 6 Ω~8 Ω.
The present invention does not have special limitation to the shape of the anode layer, using the sun in luminescent device well known to those skilled in the art
Pole layer；In the present invention, the anode layer is preferably the electrode of strip.
The yellow organic electroluminescence device that the present invention is provided includes anode modification layer, and the anode modification layer is arranged on institute
State on anode layer.The present invention does not have special limitation to the material of the anode modification layer and source, using people in the art
For the anode modification layer in electroluminescent device known to member.In the present invention, the material of the anode modification layer is prepared
Material is preferably molybdenum oxide (MoO3).In the present invention, the thickness of the anode modification layer is preferably 1nm~10nm, more preferably
2nm~8nm.
The present invention provide yellow organic electroluminescence device include hole transport-electronic barrier layer, the hole transport-
Electronic barrier layer is arranged in the anode modification layer.In the present invention, the thickness of the hole transport-electronic barrier layer is preferred
It is 30nm~60nm, more preferably 35nm~55nm, most preferably 40nm~50nm.
In the present invention, prepare the hole transport-electronic barrier layer material preferably include 4,4'- cyclohexyl two [N,
N- bis- (4 aminomethyl phenyl) aniline] (TAPC), two pyrazine [2,3-f:2 ', 3 '-h] itrile groups of quinoxaline -2,3,6,7,10,11- six
(HAT-CN), N4, N4'- bis- (naphthalene -1- bases)-N4, N4'- double (4- ethenylphenyls) biphenyl -4,4'- diamines (VNPB), N, N'-
Double (3- aminomethyl phenyls)-N, N'- couples of (phenyl) -2,7- diamines -9,9- spiro-bisfluorenes (Spiro-TPD), N, N, N', N'- tetra--(3-
Aminomethyl phenyl) -3-3 '-dimethyl benzidine (HMTPD), 2,2'- bis- (3- (bis--p-totuidine of N, N- base) phenyl) connection
Benzene (3DTAPBP), N, N'- bis- (naphthalene -2- bases)-N, N'- bis- (phenyl) benzidine (β-NPB), N, N'- bis- (base of naphthalene -1) -
N, N'- diphenyl -2,7- diaminourea -9,9- spiro-bisfluorenes (Spiro-NPB), N, N'- bis- (3- aminomethyl phenyls)-N, N'- diphenyl -
2,7- diaminourea -9,9- dimethyl fluorenes (DMFL-TPD), N, N'- bis- (naphthalene -1- bases)-N, N'- diphenyl -2,7- diaminourea -9,
9- dimethyl fluorenes (DMFL-NPB), N, N'- bis- (3- aminomethyl phenyls)-N, N'- diphenyl -2,7- diaminourea -9,9- diphenylfluorenes
(DPFL-TPD), N, N'- bis- (naphthalene -1- bases)-N, -2,2 '-tolidine of N'- diphenyl (α-NPD), 2,2', 7,
7'- tetra- (N, N- diphenyl amino) -2,7- diaminourea -9,9- spiro-bisfluorenes (Spiro-TAD), [4- (N, N- the dinaphthyl -2- of 9,9- bis-
Base-amino) phenyl] -9H- fluorenes (NPAPF), 9,9- [4- (base-N- aniline of N- naphthalenes -1)-phenyl] -9H- fluorenes (NPBAPF), 2,2 ' -
Two [N, N- bis- (4- phenyl) amino] -9,9- spiro-bisfluorenes (2,2'-Spiro-DBP), 2,2 '-bis- (N, N- phenylamino) -9,9- spiral shells
Double fluorenes (Spiro-BPA), N, N '-diphenyl-N, N '-(1- naphthyls) -1,1 '-biphenyl -4,4 '-diamines (NPB) and 4,4 '-two
One or more in [N- (p- tolyl)-N- phenyl-aminos] diphenyl (TPD).
The yellow organic electroluminescence device that the present invention is provided includes that luminescent layer is dominated in hole, and luminescent layer is dominated in the hole
It is arranged on the hole transport-electronic barrier layer.In the present invention, the thickness of the leading luminescent layer in the hole is preferably 5nm
~20nm, more preferably 5nm~10nm, more preferably 6nm~8nm.In the present invention, the leading luminescent layer in the hole preferably by
It is prepared by the material including following components：
The yellow luminous organic material of 0.5wt%~6.0wt%；
The cavity type organic host material of surplus.
In the present invention, the leading luminescent layer in the hole preferably includes the yellow organic light emission material of 0.5wt%~6.0wt%
Material, most preferably more preferably 1.0wt%~4.5wt%, 1.5wt%~3.0wt%.In the present invention, the hole is dominated
Yellow luminous organic material in luminescent layer includes double (2- (9,9- diethyl-fluorenes -2- bases) -1- phenyl -1H- benzo [d] miaows
Azoles) acetyl acetone iridium ((fbi)2Ir (acac)), double (2- phenylbenzothiazols) (acetylacetone,2,4-pentanediones) close iridium (Ir (BT)2
(acac)), three [3- (2,6- dimethyl benzenes phenolic group) -6- phenyl pyridazines] close iridium (Ir (DMP)3) and double (2- phenylpyridines) (3-
(pyridine -2- bases) -2H- chromen-2-ones) close iridium (fac-Ir (ppy)2Pc one or more in).
In the present invention, the leading luminescent layer in the hole includes the cavity type organic host material of surplus.In the present invention,
The cavity type organic host material preferably includes 4,4 '-N, the carbazoles of N '-two diphenyl (CBP), the carbazole -9- base benzene of 1,3- bis-
(mCP), 9,9'- (5- (tri-phenyl-silane base) -1,3- phenyl) two -9H- carbazoles (SimCP), 1,3,5- tri- (9- carbazyls) benzene
(TCP) one kind in (carbazole -9- bases) triphenylamines (TcTa) of, 4,4', 4 " three and 1,4- double (tri-phenyl-silane base) biphenyl (BSB)
Or it is several.
The yellow organic electroluminescence device that the present invention is provided includes that electronics dominates luminescent layer, and the electronics dominates luminescent layer
It is arranged on the leading luminescent layer in the hole.In the present invention, the leading luminescent layer of the electronics is preferably by including following components
It is prepared by material：
The organic sensitized material of 0.05wt%~2.0wt%, the organic sensitized material is the transition of energy levels matching
Metal complex；
The yellow luminous organic material of 0.5wt%~6.0wt%；
The electron type organic host material of surplus.
In the present invention, the leading luminescent layer of the electronics includes the organic sensitized material of 0.05wt%~2.0wt%, preferably
It is 0.1wt%~1.0wt%, more preferably 0.2wt%~0.5wt%.In the present invention, the organic sensitized material is energy level
The transient metal complex of energy match, preferably includes double (4,6- difluorophenyl pyridinato-N, C2) pyridinecarboxylics and closes iridium
And/or double (the fluoro- 2,3- bipyridyls of 4- tertiary butyls -2,6- two) acetyl acetone iridium (FK306) (FIrpic).
The present invention uses the transient metal complex of energy levels matching as organic sensitized material, by itself and luminescent material
In the leading luminescent layer of the electronics, the organic sensitized material serves carrier depth constraint center and energy transmission to codope
The effect of ladder, can not only equilbrium carrier distribution, widen the luminous interval of device, additionally it is possible to greatly improve material of main part
To the energy transmission of luminescent material, so as to improve the luminous efficiency of luminescent device, improve the excitation and brightness, drop of luminescent device
The operating voltage of low luminescent device, the efficiency for delaying luminescent device decay, improve luminescent device spectrum stability, improve luminous
The working life of device.
In the present invention, the leading luminescent layer of the electronics includes the yellow luminous organic material of 0.5wt%~6.0wt%,
Preferably 1.0wt%~3.0wt%.In the present invention, the yellow luminous organic material in the leading luminescent layer of the electronics is preferred
Including double (2- (9,9- diethyl-fluorenes -2- bases) -1- phenyl -1H- benzo [d] imidazoles) acetyl acetone iridium ((fbi)2Ir
(acac)), double (2- phenylbenzothiazols) (acetylacetone,2,4-pentanediones) closes iridium (Ir (BT)2(acac)), three [3- (2,6- xylenols
Base) -6- phenyl pyridazine] close iridium (Ir (DMP)3) and it is double (2- phenylpyridines) (3- (pyridine -2- bases) -2H- chromen-2-ones)
Close iridium (fac-Ir (ppy)2Pc one or more in).
In the present invention, the leading luminescent layer of the electronics includes the electron type organic host material of surplus.In the present invention,
The electron type organic host material preferably includes 2,6- bis- [3- (9H-9- carbazyls) phenyl] pyridine (26DCzPPy), 1,4-
Double (tri-phenyl-silane base) benzene (UGH2), 2,2 '-bis- (4- (9- carbazyls) phenyl) biphenyl (BCBP), three [2,4,6- trimethyls-
3- (3- pyridine radicals) phenyl] borine (3TPYMB), 1,3,5- tri- [(3- pyridines) -3- phenyl] benzene (TmPyPB), the double [3,5- of 1,3-
Two (3- pyridine radicals) phenyl] benzene (BmPyPhB), 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene (TPBi), 9- (4-
T-butyl-phenyl) double (triphenyl the silicon substrate) -9H- carbazoles (CzSi) of -3,6- and 9- (8- diphenylphosphoryls)-hexichol azoles [b, d]
One or more in furans -9H- carbazoles (DFCzPO).
The present invention provide yellow organic electroluminescence device include hole barrier-electron transfer layer, the hole barrier-
Electron transfer layer is arranged on the leading luminescent layer of the electronics.In the present invention, the thickness of the hole barrier-electron transfer layer
Preferably 30nm~60nm, more preferably 35nm~55nm, most preferably 40nm~50nm.
In the present invention, the material for preparing the hole barrier-electron transfer layer preferably include three [2,4,6- trimethyls-
3- (3- pyridine radicals) phenyl] borine (3TPYMB), 1,3,5- tri- [(3- pyridines) -3- phenyl] benzene (TmPyPB), the double [3,5- of 1,3-
Two (3- pyridine radicals) phenyl] in benzene (BmPyPhB) and 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene (TPBi) one
Plant or several.
The yellow organic electroluminescence device that the present invention is provided includes cathodic modification layer, and the cathodic modification layer is arranged on institute
State on hole barrier-electron transfer layer.In the present invention, the thickness of the cathodic modification layer is preferably 0.8nm~1.2nm, more
Preferably 0.9nm~1.1nm.The present invention does not have special limitation to the material of the cathodic modification layer and source, using ability
For the cathodic modification layer in electroluminescent device known to field technique personnel.In the present invention, the negative electrode is prepared to repair
The material for adoring layer is preferably lithium fluoride (LiF).
The yellow organic electroluminescence device that the present invention is provided includes cathode layer, and the cathode layer is arranged on the negative electrode and repaiies
On decorations layer.In the present invention, the thickness of the cathode layer is preferably 90nm~300nm, more preferably 100nm~280nm, optimal
Elect 120nm~250nm as.The present invention does not have special limitation to the material of the cathode layer and source, using art technology
For the cathode layer in electroluminescent device known to personnel.In the present invention, the cathode layer is preferably metallic cathode
Layer；Prepare the material preferably metallic aluminium of the metal cathode layer.
In the present invention, when forward voltage is applied on the yellow organic luminescent device provided in the present invention, the photophore
Part sends the gold-tinted of 563nm.
Present invention also offers the preparation method of yellow organic luminescent device described in above-mentioned technical proposal, including following step
Suddenly：
Anode layer is set on substrate；
It is leading luminous that anode modification layer, hole transport-electronic barrier layer, hole are deposited with successively in the anode layer surface
Layer, electronics leading luminescent layer, hole barrier-electron transfer layer, cathodic modification layer and cathode layer, obtain yellow organic illuminator
Part.
The present invention provides substrate, and anode layer is set over the substrate.In the present invention, the substrate and above-mentioned technical side
Substrate described in case is consistent, will not be repeated here.The present invention preferably performs etching the anode material for setting over the substrate,
A plurality of fine strip shape electrode is formed on the substrate, anode layer is obtained over the substrate.In the present invention, the material of the anode layer
Matter is consistent with described in above-mentioned technical proposal, will not be repeated here.The present invention does not have special limitation to the method for the etching, adopts
Such as can be laser ablation with lithographic technique scheme well known to those skilled in the art.
After the present invention sets anode layer over the substrate, preferably say that the substrate for being provided with anode layer for obtaining is carried out successively
Cleaning fluid cleaning, deionized water are cleaned by ultrasonic and dry.The present invention does not have special limitation to the species of the cleaning fluid, uses
Cleaning fluid well known to those skilled in the art.In the present invention, the time that the deionized water is cleaned by ultrasonic is preferably
10min~20min.The present invention does not have special limitation to the dry method, using well known to those skilled in the art dry
Dry technical scheme；As that can be oven for drying in an embodiment of the present invention.
After the present invention sets anode layer over the substrate, the present invention is deposited with anode modification successively on the anode layer
Layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, negative electrode
Decorative layer and cathode layer, obtain yellow organic luminescent device.
Before evaporation anode modification layer on the anode layer, the substrate that anode layer is provided with described in preferred pair is carried out the present invention
Low pressure plasma treatment.The present invention is preferably by the substrate of anode layer that is provided with as carrying out low-voltage plasma in vacuum chamber
Body treatment.In the present invention, the vacuum of low pressure plasma treatment is preferably 8Pa~15Pa, and more preferably 10Pa~
13Pa；The time of the low pressure plasma treatment is preferably 1min~10min, more preferably 4min~7min；Carry out described
The voltage of low pressure plasma treatment is preferably 350V~500V, most preferably more preferably 380V~480V, 400V~450V.
After obtaining being provided with the substrate of anode layer, the present invention is deposited with anode modification layer, sky successively in the anode layer surface
Cave transmission-electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, cathodic modification
Layer and cathode layer, obtain yellow organic luminescent device.The substrate for being provided with anode layer is preferably placed in organic steaming by the present invention
In plating room, the anode layer surface be deposited with successively anode modification layer, hole transport-electronic barrier layer, the leading luminescent layer in hole,
Electronics dominates luminescent layer and hole barrier-electron transfer layer；In metal evaporation room, in the hole barrier-electric transmission
Layer surface evaporation cathode decorative layer and cathode layer successively.
In the present invention, the evaporation anode modification layer, hole transport-electronic barrier layer, hole leading luminescent layer, electronics
The vacuum of leading luminescent layer and hole barrier-electron transfer layer is preferably 1 × 10-5Pa~2 × 10-5Pa, more preferably 1.3
×10-5Pa~1.7 × 10-5Pa。
In the present invention, when the anode modification layer is deposited with, the evaporation rate of the anode modification layer material is preferably
0.01nm/s~0.2nm/s, more preferably 0.02nm/s~0.05nm/s；
When the hole transport-electronic barrier layer is deposited with, the evaporation rate of the hole transport-electronic blocking layer material
Preferably 0.05nm/s~0.1nm/s, more preferably 0.05nm/s~0.08nm/s；
In the evaporation hole during leading luminescent layer, in the leading luminescent layer in the hole, the yellow luminous organic material
Evaporation rate be preferably 0.0005nm/s~0.003nm/s, more preferably 0.001nm/s~0.002nm/s；The cavity type
The evaporation rate of organic host material is preferably 0.05nm/s~0.1nm/s, more preferably 0.05nm/s~0.08nm/s；At this
In invention, the yellow luminous organic material and cavity type organic host material are preferably steamed simultaneously in different evaporation sources respectively
Hair, the weight of the yellow luminous organic material and cavity type organic host material is caused by the evaporation rate for regulating and controlling two kinds of materials
Measure the weight ratio than meeting yellow luminous organic material and cavity type organic host material described in above-mentioned technical proposal；
In the leading luminescent layer of the evaporation electronics, in the leading luminescent layer of the electronics, the steaming of the organic sensitized material
Hair speed is preferably 0.00005nm/s~0.0005nm/s, more preferably 0.0001nm/s~0.0003nm/s；The yellow has
The evaporation rate of machine luminescent material is preferably 0.0005nm/s~0.003nm/s, more preferably 0.001nm/s~0.002nm/s；
The evaporation rate of the electron type organic host material is preferably 0.05nm/s~0.1nm/s, and more preferably 0.05nm/s~
0.08nm/s；In the present invention, the organic sensitized material, yellow luminous organic material and electron type organic host material are preferred
Evaporated simultaneously in different evaporation sources respectively, by regulating and controlling three kinds of evaporation rates of material so that the organic sensitized material,
It is organic that yellow luminous organic material and electron type organic host material meet organic sensitized material described in above-mentioned technical proposal, yellow
The weight ratio of luminescent material and electron type organic host material；
When the hole barrier-electron transfer layer is deposited with, the evaporation speed of the material of the hole barrier-electron transfer layer
Rate is preferably 0.05nm/s~0.1nm/s, more preferably 0.05nm/s~0.08nm/s；
After completing the evaporation of the hole barrier-electron transfer layer, the present invention is preferably in the hole barrier-electric transmission
Metal evaporation cathodic modification layer and cathode layer successively on layer, obtain yellow organic electroluminescence device.The present invention will preferably include
By substrate, anode layer, anode modification layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, the leading luminescent layer of electronics and
The organic electroluminescence device semi-finished product of hole barrier-electron transfer layer are placed in metal evaporation room, in the hole barrier-electricity
Evaporation cathode decorative layer and cathode layer successively in sub- transport layer.In the present invention, the evaporation cathode decorative layer and cathode layer
Vacuum is preferably 4 × 10-5Pa~6 × 10-5Pa, more preferably 4.5 × 10-5Pa~5.5 × 10-5Pa。
In the present invention, when being deposited with the cathodic modification layer, the evaporation rate of the cathodic modification layer material is preferably
0.005nm/s~0.05nm/s, more preferably 0.01nm/s~0.025nm/s；
When the cathode layer is deposited with, the evaporation rate of the cathode layer materials is preferably 0.5nm/s~3.0nm/s, more
Preferably 1.0nm/s~2.0nm/s.
The invention provides a kind of yellow organic electroluminescence device, including the substrate that sets gradually, anode layer, anode are repaiied
Decorations layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, the moon
Pole decorative layer and cathode layer；The leading luminescent layer of the electronics includes following components：0.05wt%~2.0wt%'s has Smart material
Material, the organic sensitized material is the transient metal complex of energy levels matching；The yellow of 0.5wt%~6.0wt% is organic
Luminescent material；The electron type organic host material of surplus.The leading hair of electronics in the yellow organic luminescent device that the present invention is provided
Mixed with organic sensitized material in photosphere, the organic sensitized material can play a part of carrier constraint center deeply, be conducive to
The distribution of equilbrium carrier, the luminous interval for widening device, so as to reduce the operating voltage of the luminescent device.And the present invention
The yellow organic electroluminescence device of offer also has luminous efficiency higher, and efficiency decay is slow, with the work longevity higher
Life.Test result indicate that, the bright voltage of the yellow organic electroluminescence device that the embodiment of the present invention is obtained is in 3.0V or so；Most
High current efficiency is in 80.00cd/A or so；Maximum power efficiency is in 80.00lm/W or so；The high-high brightness of device is reachable
72713cd/m2。
And, in the present invention, the organic sensitized material can also play a part of energy transmission ladder, so as to accelerate
Energy transmission from material of main part to luminescent material, alleviates material of main part hair caused by luminescent material carrier capture scarce capacity
Optical issue, so that the yellow organic electroluminescence device that the present invention is provided has excitation higher.And the present invention is carried
The spectrum stability of the electroluminescent device of confession is high, and its luminescent properties is relatively low to the dependence of luminescent material doping concentration.Experiment
Result shows, under the driving of forward voltage, the yellow organic electroluminescence device that the embodiment of the present invention is obtained can send
The gold-tinted of 563nm；And with the change of operating voltage, chromaticity coordinates is almost unchanged.
In order to further illustrate the present invention, with reference to the yellow organic electroluminescence device that embodiment is provided the present invention
And preparation method thereof be described in detail, but they can not be interpreted as limiting the scope of the present invention.
Embodiment 1
First by the ito anode layer laser ablation electrode into strips on ito glass, cleaning fluid, deionized water are then used successively
It is cleaned by ultrasonic 15 minutes and is put into oven for drying；Then the substrate after drying is put into pretreatment vacuum chamber, is in vacuum
The low-voltage plasma carried out to ito anode 3 minutes with 400 volts of voltage under the atmosphere of 10Pa is transferred into organic steaming after processing
Plating room；
It is 1 × 10 in vacuum-5Pa~2 × 10-5In the organic vapor deposition room of Pa, on the ito layer successively with 0.01nm/s's
Speed evaporation 3nm thick MoO3Anode modification layer 3；With the thick TAPC hole transports-electronics of the speed evaporation 40nm of 0.05nm/s
Barrier layer 4；(fbi) is deposited with the speed of 0.001nm/s2It is thick that the speed evaporation TcTa of Ir (acac) and 0.05nm/s obtains 10nm
The leading luminescent layer 5 in hole；(fbi) is deposited with the speed that the speed of 0.0001nm/s is deposited with FK306,0.001nm/s2Ir
(acac), the speed evaporation CzSi of 0.05nm/s obtains the leading luminescent layer 6 of the thick electronics of 10nm；It is deposited with the speed of 0.05nm/s
40nm thick TmPyPB hole barriers-electron transfer layer 7；
Next, above-mentioned unfinished device is transferred to metal evaporation room, 4 × 10-5Pa~6 × 10-5The vacuum of Pa
With the LiF cathodic modification layers 8 of the speed evaporation 1.0nm thickness of 0.02nm/s under atmosphere；
The thick metal Al cathode layers 9 of 120nm are deposited with the speed of 1.0nm/s on LiF layers finally by mask plate, are prepared
It is ITO-MoO into structure3-TAPC-(fbi)2Ir (acac) (2wt%):TcTa (98wt%)-FK306 (0.2wt%):(fbi)2Ir (acac) (2wt%)：The organic electroluminescence device of CzSi (97.8wt%)-TmPyPB-LiF-Al.
The present invention applies DC voltage on the organic electroluminescence device for obtaining, and under direct voltage drive, launches
Positioned at the gold-tinted of 563nm or so；
The present invention carries out performance test to the luminescent device for obtaining, and as a result as shown in Figure 2 to 4, Fig. 2 is implemented for the present invention
Voltage-current density-the luminosity response of the yellow organic electroluminescence device that example 1 is obtained, as seen from Figure 2, this reality
The brightness of yellow organic electroluminescence device for applying example offer raises with the rising of current density and driving voltage, and device rises
Bright voltage be 3.0V, voltage be 10.1V, current density be 644.36mA/cm2When, device obtains high-high brightness 72713cd/
m2；With the change of operating voltage, the chromaticity coordinates of device is almost unchanged；
As shown in figure 3, Fig. 3 is the current density-power of the yellow organic electroluminescence device that the embodiment of the present invention 1 is obtained
Efficiency-current efficiency characteristics curve, as seen from Figure 3, the maximum of the yellow organic electroluminescence device that the present embodiment is obtained
Current efficiency is 78.62cd/A, and maximum power efficiency is 82.29lm/W；
As shown in figure 4, Fig. 4 is the yellow organic electroluminescence device that the embodiment of the present invention 1 is obtained being in brightness
20000cd/m2When spectrogram, as seen from Figure 4, spectrum main peak be located at 563nm；When brightness is 20000cd/m2When, device
Chromaticity coordinates be (0.445,0.530).
Embodiment 2
First by the ito anode layer laser ablation electrode into strips on ito glass, cleaning fluid, deionized water are then used successively
It is cleaned by ultrasonic 15 minutes and is put into oven for drying.Then the substrate after drying is put into pretreatment vacuum chamber, is in vacuum
The low-voltage plasma carried out to ito anode 3 minutes with 400 volts of voltage under the atmosphere of 10Pa is transferred into organic steaming after processing
Plating room；
It is 1 × 10 in vacuum-5Pa~2 × 10-5In the organic vapor deposition room of Pa, on the ito layer successively with 0.01nm/s's
Speed evaporation 3nm thick MoO3Anode modification layer 3；With the thick TAPC hole transports-electronics of the speed evaporation 40nm of 0.05nm/s
Barrier layer 4；(fbi) is deposited with the speed of 0.001nm/s2It is thick that the speed evaporation mCP of Ir (acac) and 0.05nm/s obtains 10nm
The leading luminescent layer 5 in hole；(fbi) is deposited with the speed that the speed of 0.0001nm/s is deposited with FK306,0.001nm/s2Ir
And the speed evaporation 26DCzPPy of 0.05nm/s obtains the leading luminescent layer 6 of the thick electronics of 10nm (acac)；With the speed of 0.05nm/s
Rate evaporation 40nm thick TmPyPB hole barriers-electron transfer layer 7；
Next, above-mentioned unfinished device is transferred to metal evaporation room, 4 × 10-5Pa~6 × 10-5The vacuum of Pa
With the LiF cathodic modification layers 8 of the speed evaporation 1.0nm thickness of 0.02nm/s under atmosphere；
The thick metal Al cathode layers 9 of 120nm are deposited with the speed of 1.0nm/s on LiF layers finally by mask plate, are prepared
It is ITO-MoO into structure3-TAPC-(fbi)2Ir (acac) (2wt%):MCP (98wt%)-FK306 (0.2wt%):(fbi)2Ir (acac) (2wt%)：The organic electroluminescence device of 26DCzPPy (97.8wt%)-TmPyPB-LiF-Al.
The present invention applies DC voltage on the organic electroluminescence device for obtaining, and under direct voltage drive, this is organic
Electroluminescent device launches the gold-tinted positioned at 563nm or so；
The present invention carries out performance test to the luminescent device for obtaining, and as a result shows, the yellow Organic Electricity that the present embodiment is obtained
The brightness of electroluminescence device is raised with the rising of current density and driving voltage, and the bright voltage of device is 3.2V, device
High-high brightness is 62692cd/m2；The maximum current efficiency of the yellow organic electroluminescence device is 76.38cd/A, peak power
Efficiency is 74.04lm/W；When brightness is 20000cd/m2When, the chromaticity coordinates of device is (0.447,0.532)；With operating voltage
Change, the chromaticity coordinates of device is almost unchanged.
Embodiment 3
First by the ito anode layer laser ablation electrode into strips on ito glass, cleaning fluid, deionized water are then used successively
It is cleaned by ultrasonic 15 minutes and is put into oven for drying.Then the substrate after drying is put into pretreatment vacuum chamber, is in vacuum
The low-voltage plasma carried out to ito anode 3 minutes with 400 volts of voltage under the atmosphere of 10Pa is transferred into organic steaming after processing
Plating room；
It is 1 × 10 in vacuum-5Pa~2 × 10-5In the organic vapor deposition room of Pa, on the ito layer successively with 0.01nm/s's
Speed evaporation 3nm thick MoO3Anode modification layer 3；With the thick TAPC hole transports-electronics of the speed evaporation 40nm of 0.05nm/s
Barrier layer 4；(fbi) is deposited with the speed of 0.001nm/s2It is thick that the speed evaporation TcTa of Ir (acac) and 0.05nm/s obtains 10nm
The leading luminescent layer 5 in hole；(fbi) is deposited with the speed that the speed of 0.0003nm/s is deposited with FIrpic, 0.002nm/s2Ir
And the speed evaporation 26DCzPPy of 0.1nm/s obtains the leading luminescent layer 6 of the thick electronics of 10nm (acac)；With the speed of 0.05nm/s
Evaporation 40nm thick TmPyPB hole barriers-electron transfer layer 7；
Next, above-mentioned unfinished device is transferred to metal evaporation room, 4 × 10-5Pa~6 × 10-5The vacuum of Pa
With the LiF cathodic modification layers 8 of the speed evaporation 1.0nm thickness of 0.02nm/s under atmosphere；
The thick metal Al cathode layers 9 of 120nm are deposited with the speed of 1.0nm/s on LiF layers finally by mask plate, are prepared
It is ITO-MoO into structure3-TAPC-(fbi)2Ir (acac) (2wt%):TcTa (98wt%)-FIrpic (0.3wt%):
(fbi)2Ir (acac) (2wt%)：The organic electroluminescence device of 26DCzPPY (97.7wt%)-TmPyPB-LiF-Al.
The present invention applies DC voltage on the organic electroluminescence device for obtaining, and under direct voltage drive, this is organic
Electroluminescent device launches the gold-tinted positioned at 563nm or so；
The present invention carries out performance test to the luminescent device for obtaining, and as a result shows, the yellow Organic Electricity that the present embodiment is obtained
The brightness of electroluminescence device is raised with the rising of current density and driving voltage, and the bright voltage of device is 3.1V, device
High-high brightness is 56492cd/m2；The maximum current efficiency of the yellow organic electroluminescence device is 81.18cd/A, peak power
Efficiency is 82.23lm/W；When brightness is 20000cd/m2When, the chromaticity coordinates of device is (0.446,0.535)；With operating voltage
Change, the chromaticity coordinates of device is almost unchanged.
As seen from the above embodiment, in the leading luminescent layer of electronics in the yellow organic luminescent device that the present invention is provided mixed with
Organic sensitized material, the organic sensitized material can play a part of carrier constraint center deeply, be conducive to equilbrium carrier
Distribution, the luminous interval of device is widened, so as to reduce the operating voltage of the luminescent device.And the yellow that the present invention is provided
Organic electroluminescence device also has luminous efficiency higher, and efficiency decay is slow, with working life higher.Experimental result
Show, the bright voltage of the yellow organic electroluminescence device that the embodiment of the present invention is obtained is in 3.0V or so；Maximum current efficiency
In 80.00cd/A or so；Maximum power efficiency is in 80.00lm/W or so；The high-high brightness of device is up to 72713cd/m2。
And, in the present invention, the organic sensitized material can also play a part of energy transmission ladder, so as to accelerate
Energy transmission from material of main part to luminescent material, alleviates material of main part hair caused by luminescent material carrier capture scarce capacity
Optical issue so that the yellow organic electroluminescence device that the present invention is provided has excitation higher.And present invention offer
The spectrum stability of electroluminescent device is high, and its luminescent properties is relatively low to the dependence of luminescent material doping concentration.Experimental result
Show, under the driving of forward voltage, the yellow organic electroluminescence device that the embodiment of the present invention is obtained can send 563nm's
Gold-tinted；And with the change of operating voltage, chromaticity coordinates is almost unchanged.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (11)
1. a kind of yellow organic electroluminescence device, including set gradually substrate, anode layer, anode modification layer, hole transport-
Electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, cathodic modification layer and negative electrode
Layer；
The leading luminescent layer of the electronics is prepared by the material including following components：
The organic sensitized material of 0.05wt%~2.0wt%, the organic sensitized material is the transition metal of energy levels matching
Complex, the organic sensitized material includes that double (4,6- difluorophenyl pyridinato-N, C2) pyridinecarboxylics close iridium and/or double (4- spies
The fluoro- 2,3- bipyridyls of butyl -2,6- two) acetyl acetone iridium；
The yellow luminous organic material of 0.5wt%~6.0wt%, the yellow luminous organic material includes double (2- (9,9- diethyls
Base-fluorenes -2- bases) -1- phenyl -1H- benzo [d] imidazoles) acetyl acetone iridium；
The electron type organic host material of surplus, the electron type organic host material includes the [3- (9H-9- carbazyls) of 2,6- bis-
Phenyl] pyridine, 1,4- double (tri-phenyl-silane base) benzene, 2,2 '-bis- (4- (9- carbazyls) phenyl) biphenyl, three [2,4,6- front threes
Base -3- (3- pyridine radicals) phenyl] borine, 1,3,5- tri- [(3- pyridines) -3- phenyl] benzene, the double [3,5- bis- (3- pyridine radicals) of 1,3-
Phenyl] benzene, 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene, double (the triphenyl silicon of 9- (4- t-butyl-phenyls) -3,6-
Base) one or more in -9H- carbazoles and 9- (8- diphenylphosphoryls)-hexichol azoles [b, d] furans -9H- carbazoles.
2. yellow organic electroluminescence device according to claim 1, it is characterised in that the leading luminescent layer bag of the electronics
Include the organic sensitized material of 0.1wt%~1.0wt%.
3. yellow organic electroluminescence device according to claim 1, it is characterised in that the leading luminescent layer bag of the electronics
Include the yellow luminous organic material of 1.0wt%~3.0wt%.
4. yellow organic electroluminescence device according to claim 1, it is characterised in that the leading luminescent layer of the electronics
Thickness is 5nm~20nm.
5. yellow organic electroluminescence device according to claim 1, it is characterised in that the leading luminescent layer in the hole by
It is prepared by the material including following components：
The yellow luminous organic material of 0.5wt%~6.0wt%；
The cavity type organic host material of surplus.
6. yellow organic electroluminescence device according to claim 5, it is characterised in that in the leading luminescent layer in the hole
Yellow luminous organic material include double (2- (9,9- diethyl-fluorenes -2- bases) -1- phenyl -1H- benzo [d] imidazoles) levulinics
Ketone closes iridium, double (2- phenylbenzothiazols) (acetylacetone,2,4-pentanediones) and closes iridium, three [3- (2,6- dimethyl benzenes phenolic group) -6- phenyl pyridazines] and close
Iridium and double (2- phenylpyridines) (3- (pyridine -2- bases) -2H- chromen-2-ones) close one or more in iridium.
7. yellow organic electroluminescence device according to claim 5, it is characterised in that the cavity type organic main body material
Material includes 4,4 '-N, the carbazoles of N '-two diphenyl, the carbazole -9- bases benzene of 1,3- bis-, 9,9'- (5- (tri-phenyl-silane base) -1,3- benzene
Base) two -9H- carbazoles, 1,3,5- tri- (9- carbazyls) benzene, 4,4', 4 " double (triphenyls of three (carbazole -9- bases) triphenylamines and 1,4-
Silylation) one or more in biphenyl.
8. yellow organic electroluminescence device according to claim 1, it is characterised in that the thickness of the anode modification layer
It is 1nm~10nm；
The thickness of the hole transport-electronic barrier layer is 30nm~60nm；
The thickness of the leading luminescent layer in the hole is 5nm~20nm；
The thickness of the hole barrier-electron transfer layer is 30nm~60nm；
The thickness of the cathodic modification layer is 0.8nm~1.2nm；
The thickness of the cathode layer is 90nm~300nm.
9. the preparation method of yellow organic electroluminescence device described in claim 1~8 any one, comprises the following steps：
Anode layer is set on substrate；
Anode modification layer, hole transport-electronic barrier layer, hole leading luminescent layer, electricity are deposited with successively in the anode layer surface
Son leading luminescent layer, hole barrier-electron transfer layer, cathodic modification layer and cathode layer, obtain yellow organic electroluminescence device.
10. preparation method according to claim 9, it is characterised in that be deposited with anode modification layer in the anode layer surface
It is preceding also to include：The substrate that anode layer will be provided with carries out low pressure plasma treatment；
The time of the low pressure plasma treatment is 1min~10min.
11. preparation methods according to claim 9, it is characterised in that be deposited with anode successively in the anode layer surface and repair
Decorations layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, the leading luminescent layer of electronics and hole barrier-electron transfer layer
Vacuum is 1 × 10-5Pa~2 × 10-5Pa；
The vacuum for being deposited with the cathodic modification layer and cathode layer is 4 × 10-5Pa~6 × 10-5Pa。
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