CN104282842B - Green organic light-emitting diode and manufacturing method thereof - Google Patents
Green organic light-emitting diode and manufacturing method thereof Download PDFInfo
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- CN104282842B CN104282842B CN201410605268.8A CN201410605268A CN104282842B CN 104282842 B CN104282842 B CN 104282842B CN 201410605268 A CN201410605268 A CN 201410605268A CN 104282842 B CN104282842 B CN 104282842B
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
- H10K50/121—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants for assisting energy transfer, e.g. sensitization
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
- H10K85/146—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE poly N-vinylcarbazol; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
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Abstract
The invention provides a green organic light-emitting diode. The green organic light-emitting diode comprises a substrate, an anode layer, an anode modification layer, a hole transport-electron block layer, a hole-dominated light-emitting layer, an electron-dominated light-emitting layer, a hole block-electron transport layer, a cathode modification layer and a cathode layer in sequence. The electron-dominated light-emitting layer comprises 0.05-2.0 wt% of organic sensitized materials, 5-15 wt% of green organic light-emitting materials, and the balance being electron type organic host materials, wherein the organic sensitized materials are transition metal compounds with energy at matched energy levels of. According to the green organic light-emitting diode, all the organic sensitized materials play the roles as a carrier deep constraint center and an energy transfer step, so that distribution of carriers is balanced, the light-emitting range of the device is expanded, energy transfer from the host materials to the light-emitting materials is accelerated, the working voltage of the light-emitting diode is reduced, efficient of the light-emitting diode is improved, and the service life of the light-emitting diode is prolonged.
Description
Technical field
The present invention relates to electroluminescent technology field, more particularly to a kind of Green organic light emitting diode and its preparation side
Method.
Background technology
Organic electroluminescence device is a kind of selfluminous element, when electric charge is injected into hole injecting electrode (anode) and electricity
During organic membrane between sub- injecting electrode (negative electrode), electronics and hole combine and subsequently bury in oblivion, thus generation light.Organic electroluminescence is sent out
Optical device has the characteristics such as low-voltage, high brightness, wide viewing angle, therefore organic electroluminescence device has obtained swift and violent in recent years
Development.Green organic light emitting diode is had become at present due to the application prospect at aspects such as monochromatic display, white light modulation
Study hotspot.
All the time, trivalent complex of iridium because have the advantages that luminous efficiency high adjustable with glow color and by academia
It is considered as preferable electroluminescent organic material with industrial circle, many research teams both domestic and external are from materials synthesis and device optimization side
Face is set about, and makes great efforts to improve the combination property of Green organic light emitting diode to meeting the needs of industrialization.For example, 2008
Junji Kido of Japanese chevron university et al. are using the complex of iridium Ir (ppy) with green emitted3As luminescent material, lead to
The method of overdoping is obtained organic electroluminescence device.Although it is higher that the device shows that ideal green emitting also obtain
Maximum luminous efficiency, but the decay of the efficiency of the luminescent device is very fast, running voltage is higher, is unfavorable for improving the brightness of device
And working life.
In order to solve these problems, Zheng Youxuan of Nanjing University in 2011 et al. by modifying the assistant ligand of complex of iridium
Obtain the green luminescent material Ir (tfmppy) with good electron transport ability2(tpip), and by the complex of iridium mix
The Green organic light emitting diode of multiple structure has been obtained in preferred material of main part.The device has good stabilised efficiency
Property and higher maximum luminousing brightness, but the running voltage of the luminescent device is still higher.
The content of the invention
It is an object of the invention to provide a kind of Green organic light emitting diode and preparation method thereof, what the present invention was provided
The running voltage of Green organic light emitting diode is low.
The invention provides a kind of Green organic light emitting diode, repaiies including the substrate, anode layer, anode for setting gradually
Decorations layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, the moon
Pole decorative layer and cathode layer；
The leading luminescent layer of the electronics is prepared by the material including following components：
The organic sensitized material of 0.05wt%～2.0wt%, the organic sensitized material are the transition of energy levels matching
Metal complex；
The green luminous organic material of 5.0wt%～15.0wt%；
The electron type organic host material of surplus.
Preferably, the organic sensitized material include double (4,6- difluorophenyl pyridinato-N, C2) pyridinecarboxylics close iridium and/or
Double (two fluoro- 2,3- bipyridyls of 4- tertiary butyls -2,6-) acetyl acetone iridium.
Preferably, the electron type organic host material include 2,6- bis- [3- (9H-9- carbazyls) phenyl] pyridine, Isosorbide-5-Nitrae-
Double (tri-phenyl-silane base) benzene, 2,2 '-bis- (4- (9- carbazyls) phenyl) biphenyl, three [2,4,6- trimethyl -3- (3- pyridine radicals)
Phenyl] borine, 1,3,5- tri- [(3- pyridines) -3- phenyl] benzene, 1,3- double [3,5- bis- (3- pyridine radicals) phenyl] benzene, 1,3,5- tri-
Double (triphenyl the silicon substrate) -9H- carbazoles of (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene, 9- (4- t-butyl-phenyls) -3,6- and 9-
One or more in (8- diphenylphosphoryls)-hexichol azoles [b, d] furan -9H- carbazoles.
Preferably, the green luminous organic material includes that three (2- phenylpyridines) close iridium, double (2- phenylpyridines) (acetyl
Acetone) close iridium, three [2- (p- aminomethyl phenyl) pyridines] conjunction iridium, double (2- phenylpyridines) [2- (diphenyl -3- bases) pyridine] conjunction
Iridium, facial-three (one kind or several in 2- (3- is to dimethyl benzene) pyridine conjunction iridium and three (2- phenyl -3- methvl-pyridiniums) conjunction iridium
Kind.
Preferably, the leading luminescent layer of the electronics includes the organic sensitized material of 0.1wt%～1.0wt%.
Preferably, the leading luminescent layer of the electronics includes the green luminous organic material of 5.0wt%～10.0wt%.
Preferably, the thickness of the leading luminescent layer of the electronics is 5nm～20nm.
Preferably, the leading luminescent layer in the hole is prepared by the material including following components：
The green luminous organic material of 5.0wt%～15.0wt%；
The cavity type organic host material of surplus.
Preferably, the green luminous organic material in the leading luminescent layer in the hole include three (2- phenylpyridines) conjunction iridium,
Double (2- phenylpyridines) (acetylacetone,2,4-pentanediones) closes iridium, three [2- (p- aminomethyl phenyl) pyridines] and closes iridium, double (2- phenylpyridines) [2- (two
Phenyl -3- bases) pyridine] close iridium, facial-three (2- (3- is to dimethyl benzene) pyridine conjunction iridium and three (2- phenyl -3- methvl-pyridiniums)
Close one or more in iridium.
Preferably, the cavity type organic host material includes 4,4 '-N, the N carbazole diphenyl of '-two, 1,3-, bis- carbazole -9-
Base benzene, 9,9'- (5- (tri-phenyl-silane base) -1,3- phenyl) two -9H- carbazoles, 1,3,5- tri- (9- carbazyls) benzene, 4,4', 4 "
One or more in three (9 base of carbazole) triphenylamines and double (tri-phenyl-silane base) biphenyl of 1,4-.
Preferably, the thickness of the anode modification layer is 1nm～10nm；
The thickness of the hole transport-electronic barrier layer is 30nm～60nm；
The thickness of the leading luminescent layer in the hole is 5nm～20nm；
The thickness of the hole barrier-electron transfer layer is 30nm～60nm；
The thickness of the cathodic modification layer is 0.8nm～1.2nm；
The thickness of the cathode layer is 90nm～300nm.
The invention provides the preparation method of Green organic light emitting diode described in above-mentioned technical proposal, including following step
Suddenly：
Anode layer is set on substrate；
It is leading luminous that anode modification layer, hole transport-electronic barrier layer, hole are deposited with successively in the anode layer surface
Layer, electronics leading luminescent layer, hole barrier-electron transfer layer, cathodic modification layer and cathode layer, obtain green organic illuminator
Part.
Preferably, also include before anode layer surface evaporation anode modification layer：The substrate for being provided with anode layer is entered
The process of row low pressure plasma；
The time that the low pressure plasma is processed is 1min～10min.
Preferably, anode modification layer, hole transport-electronic barrier layer, hole master are deposited with successively in the anode layer surface
The vacuum for leading the leading luminescent layer of luminescent layer, electronics and hole barrier-electron transfer layer is 1 × 10-5Pa～2 × 10-5Pa；
The vacuum of the evaporation cathode decorative layer and cathode layer is 4 × 10-5Pa～6 × 10-5Pa。
The invention provides a kind of Green organic light emitting diode, repaiies including the substrate, anode layer, anode for setting gradually
Decorations layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, the moon
Pole decorative layer and cathode layer；The leading luminescent layer of the electronics includes following components：0.05wt%～2.0wt%'s has Smart material
Material, the organic sensitized material are the transient metal complex of energy levels matching；5.0wt%～15.0wt%'s is green organic
Luminescent material；The electron type organic host material of surplus.Leading of electronics in the green organic luminescent device that the present invention is provided
Mixed with organic sensitized material in photosphere, the organic sensitized material can play a part of carrier constraint center deeply, be conducive to
The distribution of equilbrium carrier, the luminous interval for widening device, so as to reduce the running voltage of the luminescent device.And the present invention
The Green organic light emitting diode of offer also has higher luminous efficiency, and efficiency decay is slow, with the higher work longevity
Life.Test result indicate that, the bright voltage of the Green organic light emitting diode that the embodiment of the present invention is obtained is less than 3.0V；It is maximum
Current efficiency is in 120.00cd/A or so；Maximum power efficiency is respectively 135.00lm/W；The high-high brightness of device is reachable
160256cd/m2。
And, in the present invention, the organic sensitized material can also play a part of energy transmission ladder, so as to accelerate
Energy transmission from material of main part to luminescent material, caused by alleviating luminescent material carrier capture scarce capacity, material of main part is sent out
Optical issue so that the electroluminescent device that the present invention is provided has higher spectrum stability, and its luminescent properties is to luminescent material
The dependency of doping content is relatively low.Test result indicate that, under the driving of forward voltage, the green that the embodiment of the present invention is obtained has
Organic electroluminescence devices can send the green glow of 515nm；And with the change of running voltage, chromaticity coordinates is almost unchanged.
Description of the drawings
Fig. 1 is the structural representation of Green organic light emitting diode provided in an embodiment of the present invention；
Fig. 2 is the voltage-current density-light characteristic of the Green organic light emitting diode that the embodiment of the present invention 1 is obtained
Curve；
Fig. 3 is the electric current density-power efficiency-electric current of the Green organic light emitting diode that the embodiment of the present invention 1 is obtained
Efficiency characteristic device；
It is 20000cd/m in brightness that Fig. 4 is the Green organic light emitting diode that the embodiment of the present invention 1 is obtained2When light
Spectrogram.
Specific embodiment
The invention provides a kind of Green organic light emitting diode, repaiies including the substrate, anode layer, anode for setting gradually
Decorations layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, the moon
Pole decorative layer and cathode layer；
The leading luminescent layer of the electronics includes following components：
The organic sensitized material of 0.05wt%～2.0wt%, the organic sensitized material are the transition of energy levels matching
Metal complex；
The green luminous organic material of 5.0wt%～15.0wt%；
The electron type organic host material of surplus.
It is mixed with organic sensitized material in the leading luminescent layer of electronics in the green organic luminescent device that the present invention is provided, described
Organic sensitized material can play a part of carrier constraint center deeply, be conducive to the distribution of equilbrium carrier, widen device
Luminous interval, so as to reduce the running voltage of the luminescent device.And the Green organic light emitting diode that the present invention is provided
Also there is higher luminous efficiency, efficiency decay is slow, with higher working life.
And, in the present invention, the organic sensitized material can also play a part of energy transmission ladder, so as to accelerate
Energy transmission from material of main part to luminescent material, caused by alleviating luminescent material carrier capture scarce capacity, material of main part is sent out
Optical issue, so that the electroluminescent device that the present invention is provided has higher spectrum stability, its luminescent properties is to luminous
The dependency of material doped concentration is relatively low.
Referring to Fig. 1, Fig. 1 is the structural representation of Green organic light emitting diode provided in an embodiment of the present invention, wherein 1
It is anode layer, 3 is anode modification layer, 4 is hole transport-electronic barrier layer, 5 is the leading luminescent layer in hole, 6 is electricity for substrate, 2
The leading luminescent layer of son, 7 be hole barrier-electron transfer layer, 8 be cathodic modification layer, 9 be cathode layer.
The Green organic light emitting diode that the present invention is provided includes substrate.Material and source of the present invention to the substrate
Without special restriction, the substrate as electroluminescent device is known using those skilled in the art.In the reality of the present invention
Apply in example, the substrate is preferably glass substrate, quartz substrate, multicrystalline silicon substrate, monocrystalline substrate or graphene film.
The Green organic light emitting diode that the present invention is provided includes anode layer, and the anode layer is arranged on the substrate
On.The present invention does not have special restriction to the material of the anode layer and source, using it is well known to those skilled in the art for
Anode layer in electroluminescent device.In the present invention, the material for preparing the anode layer is preferably indium tin oxide
(ITO)；The face resistance of the indium tin oxide is preferably 5 Ω～25 Ω, most preferably more preferably 5 Ω～10 Ω, 6 Ω～8 Ω.
The present invention does not have special restriction to the shape of the anode layer, using the sun in luminescent device well known to those skilled in the art
Pole layer；In the present invention, the anode layer is preferably the electrode of strip.
The Green organic light emitting diode that the present invention is provided includes anode modification layer, and the anode modification layer is arranged on institute
State on anode layer.The present invention does not have special restriction with source to the material of the anode modification layer, using people in the art
For the anode modification layer in electroluminescent device known to member.In the present invention, prepare the material of the anode modification layer
Material is preferably molybdenum oxide (MoO3).In the present invention, the thickness of the anode modification layer is preferably 1nm～10nm, more preferably
2nm～8nm.
The Green organic light emitting diode that the present invention is provided includes hole transport-electronic barrier layer, the hole transport-
Electronic barrier layer is arranged in the anode modification layer.In the present invention, the thickness of the hole transport-electronic barrier layer is preferred
For 30nm～60nm, most preferably more preferably 35nm～55nm, 40nm～50nm.
In the present invention, prepare the hole transport-electronic barrier layer material preferably include 4,4'- cyclohexyl two [N,
N- bis- (4 aminomethyl phenyl) aniline] (TAPC), two pyrazine [2,3-f:2 ', 3 '-h] six itrile groups of quinoxaline -2,3,6,7,10,11-
(HAT-CN), N4, N4'- bis- (naphthalene -1- bases)-N4, N4'- double (4- ethenylphenyls) biphenyl -4,4'- diamidogen (VNPB), N, N'-
Double (3- aminomethyl phenyls)-N, N'- double (phenyl) -2,7- diamidogen -9,9- spiro-bisfluorenes (Spiro-TPD), N, tetra--(3- of N, N', N'-
Aminomethyl phenyl) -3-3 '-dimethyl benzidine (HMTPD), 2,2'- bis- (3- (N, N- bis--p-totuidine base) phenyl) connection
Benzene (3DTAPBP), N, N'- bis- (naphthalene -2- bases)-N, N'- bis- (phenyl) benzidine (β-NPB), N, N'- bis- (- 1 base of naphthalene) -
N, N'- diphenyl -2,7- diaminourea -9,9- spiro-bisfluorenes (Spiro-NPB), N, N'- bis- (3- aminomethyl phenyls)-N, N'- diphenyl -
2,7- diaminourea -9,9- dimethyl fluorenes (DMFL-TPD), N, N'- bis- (naphthalene -1- bases)-N, N'- diphenyl -2,7- diaminourea -9,
9- dimethyl fluorenes (DMFL-NPB), N, N'- bis- (3- aminomethyl phenyls)-N, N'- diphenyl -2,7- diaminourea -9,9- diphenylfluorenes
(DPFL-TPD), N, N'- bis- (naphthalene -1- bases)-N, N'- -2,2 '-tolidines of diphenyl (α-NPD), 2,2', 7,
7'- tetra- (N, N- diphenyl amino) -2,7- diaminourea -9,9- spiro-bisfluorenes (Spiro-TAD), bis- [4- (N, N- dinaphthyl -2- of 9,9-
Base-amino) phenyl] -9H- fluorenes (NPAPF), 9,9- [4- (- 1 base-N- aniline of N- naphthalenes)-phenyl] -9H- fluorenes (NPBAPF), 2,2 ' -
Two [N, N- bis- (4- phenyl) amino] -9,9- spiro-bisfluorenes (2,2'-Spiro-DBP), 2,2 '-bis- (N, N- phenylamino) -9,9- spiral shells
Double fluorenes (Spiro-BPA), N, N '-diphenyl-N, N '-(1- naphthyls) -1,1 '-biphenyl -4,4 '-diamidogen (NPB) and 4,4 '-two
One or more in [N- (p- tolyl)-N- phenyl-aminos] diphenyl (TPD).
The Green organic light emitting diode that the present invention is provided includes that luminescent layer is dominated in hole, and luminescent layer is dominated in the hole
It is arranged on the hole transport-electronic barrier layer.In the present invention, the thickness of the leading luminescent layer in the hole is preferably 5nm
～20nm, more preferably 5nm～10nm, most preferably 6nm～8nm.In the present invention, the leading luminescent layer in the hole preferably by
Prepare including the material of following components：
The green luminous organic material of 5.0wt%～15.0wt%；
The cavity type organic host material of surplus.
In the present invention, the leading luminescent layer in the hole preferably includes the green organic light emission of 5.0wt%～15.0wt%
Material, more preferably 5.0wt%～10.0wt%, most preferably 6.0wt%～8.0wt%.In the present invention, the hole master
Leading the green luminous organic material in luminescent layer includes that three (2- phenylpyridines) close iridium (Ir (ppy)3), double (2- phenyl pyrazolines
Pyridine) (acetylacetone,2,4-pentanedione) conjunction iridium (Ir (ppy)2(acac)), three [2- (p- aminomethyl phenyl) pyridines] close iridium (Ir (mppy)3), double (2-
Phenylpyridine) [2- (diphenyl -3- bases) pyridine] conjunction iridium (Ir (ppy)2(m-bppy)), facial-three (2- (3- is to dimethyl benzene)
Pyridine closes iridium (TEG) and three (2- phenyl -3- methvl-pyridiniums) close iridium (Ir (3mppy)3) in one or more.
In the present invention, the leading luminescent layer in the hole includes the cavity type organic host material of surplus.In the present invention,
The cavity type organic host material preferably includes 4,4 '-N,-two carbazole diphenyl (CBP) of N ', bis- carbazole -9- base benzene of 1,3-
(mCP), 9,9'- (5- (tri-phenyl-silane base) -1,3- phenyl) two -9H- carbazoles (SimCP), 1,3,5- tri- (9- carbazyls) benzene
(TCP), 4,4', 4 " one kind in three (carbazole -9- bases) triphenylamines (TcTa) and 1,4- double (tri-phenyl-silane base) biphenyl (BSB)
Or it is several.
The Green organic light emitting diode that the present invention is provided includes that electronics dominates luminescent layer, and the electronics dominates luminescent layer
It is arranged on the leading luminescent layer in the hole.In the present invention, the leading luminescent layer of the electronics is preferably by including following components
It is prepared by material：
The organic sensitized material of 0.05wt%～2.0wt%, the organic sensitized material are the transition of energy levels matching
Metal complex；
The green luminous organic material of 5.0wt%～15.0wt%；
The electron type organic host material of surplus.
In the present invention, the leading luminescent layer of the electronics includes the organic sensitized material of 0.05wt%～2.0wt%, preferably
For 0.1wt%～1.0wt%, more preferably 0.2wt%～0.5wt%.In the present invention, the organic sensitized material is energy level
The transient metal complex of energy match, preferably includes double (4,6- difluorophenyl pyridinato-N, C2) pyridinecarboxylics and closes iridium
And/or double (two fluoro- 2,3- bipyridyls of 4- tertiary butyls -2,6-) acetyl acetone iridium (FK306) (FIrpic).
The present invention adopts the transient metal complex of energy levels matching as organic sensitized material, by itself and luminescent material
In the leading luminescent layer of the electronics, the organic sensitized material serves carrier depth constraint center and energy transmission to codope
The effect of ladder, can not only equilbrium carrier distribution, widen the luminous interval of device, additionally it is possible to greatly improve material of main part
To the energy transmission of luminescent material, so as to improving the luminous efficiency of luminescent device, improving the excitation and brightness, drop of luminescent device
The running voltage of low luminescent device, the efficiency of luminescent device that delays decay, improve luminescent device spectrum stability, improve luminous
The working life of device.
In the present invention, the leading luminescent layer of the electronics includes the green luminous organic material of 5.0wt%～15.0wt%,
Preferably 5.0wt%～10.0wt%, more preferably 6.0wt%～8.0wt%.In the present invention, the electronics is leading luminous
Green luminous organic material in layer preferably includes to include that three (2- phenylpyridines) close iridium (Ir (ppy)3), double (2- phenylpyridines)
(acetylacetone,2,4-pentanedione) closes iridium (Ir (ppy)2(acac)), three [2- (p- aminomethyl phenyl) pyridines] close iridium (Ir (mppy)3), double (2- benzene
Yl pyridines) [2- (diphenyl -3- bases) pyridine] conjunction iridium (Ir (ppy)2(m-bppy)), facial-three (2- (3- is to dimethyl benzene) pyrrole
Iridium (TEG) is closed in pyridine and three (2- phenyl -3- methvl-pyridiniums) close iridium (Ir (3mppy)3) in one or more.
In the present invention, the leading luminescent layer of the electronics includes the electron type organic host material of surplus.In the present invention,
The electron type organic host material preferably includes 2,6- bis- [3- (9H-9- carbazyls) phenyl] pyridine (26DCzPPy), 1,4-
Double (tri-phenyl-silane base) benzene (UGH2), 2,2 '-bis- (4- (9- carbazyls) phenyl) biphenyl (BCBP), three [2,4,6- trimethyls-
3- (3- pyridine radicals) phenyl] borine (3TPYMB), 1,3,5- tri- [(3- pyridines) -3- phenyl] benzene (TmPyPB), the double [3,5- of 1,3-
Two (3- pyridine radicals) phenyl] benzene (BmPyPhB), 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene (TPBi), 9- (4-
T-butyl-phenyl) double (triphenyl the silicon substrate) -9H- carbazoles (CzSi) of -3,6- and 9- (8- diphenylphosphoryls)-hexichol azoles [b, d]
One or more in furan -9H- carbazoles (DFCzPO).
The Green organic light emitting diode that the present invention is provided includes hole barrier-electron transfer layer, the hole barrier-
Electron transfer layer is arranged on the leading luminescent layer of the electronics.In the present invention, the thickness of the hole barrier-electron transfer layer
Preferably 30nm～60nm, more preferably 35nm～55nm, most preferably 40nm～50nm.
In the present invention, the material for preparing the hole barrier-electron transfer layer preferably include three [2,4,6- trimethyls-
3- (3- pyridine radicals) phenyl] borine (3TPYMB), 1,3,5- tri- [(3- pyridines) -3- phenyl] benzene (TmPyPB), the double [3,5- of 1,3-
Two (3- pyridine radicals) phenyl] in benzene (BmPyPhB) and 1,3,5- tri- (1- phenyl -1H- benzimidazolyl-2 radicals-yl) benzene (TPBi) one
Plant or several.
The Green organic light emitting diode that the present invention is provided includes cathodic modification layer, and the cathodic modification layer is arranged on institute
State on hole barrier-electron transfer layer.In the present invention, the thickness of the cathodic modification layer is preferably 0.8nm～1.2nm, more
Preferably 0.9nm～1.1nm.The present invention does not have special restriction with source to the material of the cathodic modification layer, using ability
For the cathodic modification layer in electroluminescent device known to field technique personnel.In the present invention, prepare the negative electrode to repair
The material of decorations layer is preferably lithium fluoride (LiF).
The Green organic light emitting diode that the present invention is provided includes cathode layer, and the cathode layer is arranged on the negative electrode and repaiies
On decorations layer.In the present invention, the thickness of the cathode layer is preferably 90nm～300nm, more preferably 100nm～280nm, optimum
Elect 120nm～250nm as.The present invention does not have special restriction with source to the material of the cathode layer, using art technology
For the cathode layer in electroluminescent device known to personnel.In the present invention, the cathode layer is preferably metallic cathode
Layer；The material for preparing the metal cathode layer is preferably metallic aluminium.
In the present invention, when forward voltage is applied on the green organic luminescent device provided in the present invention, the luminous organ
Part sends the green glow of 515nm.
Present invention also offers the preparation method of green organic luminescent device described in above-mentioned technical proposal, including following step
Suddenly：
Anode layer is set on substrate；
It is leading luminous that anode modification layer, hole transport-electronic barrier layer, hole are deposited with successively in the anode layer surface
Layer, electronics leading luminescent layer, hole barrier-electron transfer layer, cathodic modification layer and cathode layer, obtain green organic illuminator
Part.
The present invention provides substrate, arranges anode layer over the substrate.In the present invention, the substrate and above-mentioned technical side
Substrate described in case is consistent, will not be described here.The anode material for arranging over the substrate is preferably performed etching by the present invention,
A plurality of fine strip shape electrode is formed on the substrate, anode layer is obtained over the substrate.In the present invention, the material of the anode layer
Matter is consistent with described in above-mentioned technical proposal, will not be described here.The present invention does not have special restriction to the method for the etching, adopts
With lithographic technique scheme well known to those skilled in the art, it can such as be laser ablation.
After the present invention arranges anode layer over the substrate, preferably the substrate for being provided with anode layer for obtaining is carried out successively
Cleanout fluid cleaning, deionized water are cleaned by ultrasonic and are dried.The present invention does not have special restriction to the species of the cleanout fluid, adopts
Cleanout fluid well known to those skilled in the art.In the present invention, the time that the deionized water is cleaned by ultrasonic is preferably
10min～20min.The present invention does not have special restriction to the method for the drying, using well known to those skilled in the art dry
Dry technical scheme；As in an embodiment of the present invention, being oven for drying.
After the present invention arranges anode layer over the substrate, the present invention is deposited with anode modification on the anode layer successively
Layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, negative electrode
Decorative layer and cathode layer, obtain green organic luminescent device.
Before the present invention is deposited with anode modification layer on the anode layer, the substrate that anode layer is provided with described in preferred pair is carried out
Low pressure plasma process.The present invention is preferably by the substrate for being provided with anode layer as carrying out low-voltage plasma in vacuum chamber
Body process.In the present invention, the vacuum that the low pressure plasma is processed preferably 8Pa～15Pa, more preferably 10Pa～
13Pa；The time that the low pressure plasma is processed is preferably 1min～10min, more preferably 4min～7min；Carry out described
The voltage of low pressure plasma process is preferably 350V～500V, most preferably more preferably 380V～480V, 400V～450V.
After obtaining being provided with the substrate of anode layer, the present invention is deposited with anode modification layer, sky successively in the anode layer surface
Cave transmission-electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, cathodic modification
Layer and cathode layer, obtain green organic luminescent device.The substrate for being provided with anode layer is preferably placed in organic steaming by the present invention
In plating room, the anode layer surface be deposited with successively anode modification layer, hole transport-electronic barrier layer, the leading luminescent layer in hole,
The leading luminescent layer of electronics and hole barrier-electron transfer layer；In metal evaporation room, in the hole barrier-electric transmission
Layer surface evaporation cathode decorative layer and cathode layer successively.
In the present invention, the evaporation anode modification layer, hole transport-electronic barrier layer, hole leading luminescent layer, electronics
The vacuum of leading luminescent layer and hole barrier-electron transfer layer is preferably 1 × 10-5Pa～2 × 10-5Pa, more preferably 1.3
×10-5Pa～1.7 × 10-5Pa。
In the present invention, when the anode modification layer is deposited with, the evaporation rate of the anode modification layer material is preferably
0.01nm/s～0.2nm/s, more preferably 0.02nm/s～0.05nm/s；
When the hole transport-electronic barrier layer is deposited with, the evaporation rate of the hole transport-electronic blocking layer material
Preferably 0.05nm/s～0.1nm/s, more preferably 0.05nm/s～0.08nm/s；
In the evaporation hole during leading luminescent layer, in the leading luminescent layer in the hole, the green luminous organic material
Evaporation rate be preferably 0.0025nm/s～0.01nm/s, more preferably 0.005nm/s～0.008nm/s；The cavity type
The evaporation rate of organic host material is preferably 0.05nm/s～0.1nm/s, more preferably 0.05nm/s～0.08nm/s；At this
In invention, the green luminous organic material and cavity type organic host material are preferably steamed in different evaporation sources respectively simultaneously
Send out, the weight of the green luminous organic material and cavity type organic host material is caused by the evaporation rate for regulating and controlling bi-material
Amount ratio meets the weight ratio of green luminous organic material and cavity type organic host material described in above-mentioned technical proposal；
In the leading luminescent layer of the evaporation electronics, in the leading luminescent layer of the electronics, the steaming of the organic sensitized material
Send out speed and be preferably 0.00005nm/s～0.0005nm/s, more preferably 0.0001nm/s～0.0003nm/s；The green has
The evaporation rate of machine luminescent material is preferably 0.0025nm/s～0.01nm/s, more preferably 0.005nm/s～0.008nm/s；
The evaporation rate of the electron type organic host material preferably 0.05nm/s～0.1nm/s, more preferably 0.05nm/s～
0.08nm/s；In the present invention, the organic sensitized material, green luminous organic material and electron type organic host material are preferred
Simultaneously evaporate in respectively different evaporation source, by the evaporation rate for regulating and controlling three kinds of materials so that the organic sensitized material, green
Colour organic luminous material and electron type organic host material meet organic sensitized material described in above-mentioned technical proposal, organic of green
The weight ratio of luminescent material and electron type organic host material；
When the hole barrier-electron transfer layer is deposited with, the evaporation speed of the material of the hole barrier-electron transfer layer
Rate is preferably 0.05nm/s～0.1nm/s, more preferably 0.05nm/s～0.08nm/s；
After completing the evaporation of the hole barrier-electron transfer layer, the present invention is preferably in the hole barrier-electric transmission
Metal evaporation cathodic modification layer and cathode layer successively on layer, obtain Green organic light emitting diode.The present invention will preferably include
By substrate, anode layer, anode modification layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, the leading luminescent layer of electronics and
The organic electroluminescence device semi-finished product of hole barrier-electron transfer layer are placed in metal evaporation room, in the hole barrier-electricity
Evaporation cathode decorative layer and cathode layer successively in sub- transport layer.In the present invention, the evaporation cathode decorative layer and cathode layer
Vacuum is preferably 4 × 10-5Pa～6 × 10-5Pa, more preferably 4.5 × 10-5Pa～5.5 × 10-5Pa。
In the present invention, when being deposited with the cathodic modification layer, the evaporation rate of the cathodic modification layer material is preferably
0.005nm/s～0.05nm/s, more preferably 0.01nm/s～0.02nm/s；
When the cathode layer is deposited with, the evaporation rate of the cathode layer materials is preferably 0.5nm/s～2.0nm/s, more
Preferably 1.0nm/s～1.5nm/s.
The invention provides a kind of Green organic light emitting diode, repaiies including the substrate, anode layer, anode for setting gradually
Decorations layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, the moon
Pole decorative layer and cathode layer；The leading luminescent layer of the electronics includes following components：0.05wt%～2.0wt%'s has Smart material
Material, the organic sensitized material are the transient metal complex of energy levels matching；5.0wt%～15.0wt%'s is green organic
Luminescent material；The electron type organic host material of surplus.Leading of electronics in the green organic luminescent device that the present invention is provided
Mixed with organic sensitized material in photosphere, the organic sensitized material can play a part of carrier constraint center deeply, be conducive to
The distribution of equilbrium carrier, the luminous interval for widening device, so as to reduce the running voltage of the luminescent device.And the present invention
The Green organic light emitting diode of offer also has higher luminous efficiency, and efficiency decay is slow, with the higher work longevity
Life.Test result indicate that, the bright voltage of the Green organic light emitting diode that the embodiment of the present invention is obtained is less than 3.0V；It is maximum
Current efficiency is in 120.00cd/A or so；Maximum power efficiency is respectively 135.00lm/W；The high-high brightness of device is reachable
160256cd/m2。
And, in the present invention, the organic sensitized material can also play a part of energy transmission ladder, so as to accelerate
Energy transmission from material of main part to luminescent material, caused by alleviating luminescent material carrier capture scarce capacity, material of main part is sent out
Optical issue so that the electroluminescent device that the present invention is provided has higher spectrum stability, and its luminescent properties is to luminescent material
The dependency of doping content is relatively low.Test result indicate that, under the driving of forward voltage, the green that the embodiment of the present invention is obtained has
Organic electroluminescence devices can send the green glow of 515nm；And with the change of running voltage, chromaticity coordinates is almost unchanged.
In order to further illustrate the present invention, with reference to the Green organic light emitting diode that embodiment is provided to the present invention
And preparation method thereof be described in detail, but they can not be interpreted as limiting the scope of the present invention.
Embodiment 1
First by the electrode into strips of the ito anode layer laser ablation on ito glass, cleanout fluid, deionized water are then used successively
It is cleaned by ultrasonic 15 minutes and is put into oven for drying；Then the substrate after drying is put into into pretreatment vacuum chamber, in vacuum is
The low-voltage plasma carried out to ito anode 3 minutes with 400 volts of voltage under the atmosphere of 10Pa is transferred into organic steaming after processing
Plating room；
It is 1 × 10 in vacuum-5Pa～2 × 10-5In the organic vapor deposition room of Pa, on the ito layer successively with 0.01nm/s's
Speed evaporation 3nm thick MoO3Anode modification layer 3；With the thick TAPC hole transports-electronics of the speed evaporation 40nm of 0.05nm/s
Barrier layer 4；With speed evaporation Ir (ppy) of 0.0035nm/s3The thick skies of 10nm are obtained with the speed evaporation TcTa of 0.05nm/s
Dominate luminescent layer 5 in cave；With speed evaporation Ir (ppy) of speed evaporation FK306,0.0035nm/s of 0.0001nm/s3、
The speed evaporation CzSi of 0.05nm/s obtains the leading luminescent layer 6 of the thick electronics of 10nm；It is thick with the speed evaporation 40nm of 0.05nm/s
TmPyPB hole barriers-electron transfer layer 7；
Next, above-mentioned unfinished device is transferred to into metal evaporation room, 4 × 10-5Pa～6 × 10-5The vacuum of Pa
With the LiF cathodic modification layers 8 of the speed evaporation 1.0nm thickness of 0.02nm/s under atmosphere；
The thick metal Al cathode layers 9 of 120nm are deposited with the speed of 1.0nm/s on LiF layers finally by mask plate, are prepared
It is ITO-MoO into structure3-TAPC-Ir(ppy)3(7wt%):TcTa (93wt%)-FK306 (0.2wt%):Ir(ppy)3
(7wt%):The organic electroluminescence device of CzSi (92.8wt%)-TmPyPB-LiF-Al.
The present invention applies DC voltage on the organic electroluminescence device for obtaining, and under direct voltage drive, launches
Positioned at the green glow of 515nm or so；
The present invention carries out performance test to the luminescent device for obtaining, and as a result as shown in Figure 2 to 4, Fig. 2 is present invention enforcement
Voltage-current density-the luminosity response of the Green organic light emitting diode that example 1 is obtained, as seen from Figure 2, this reality
The brightness of Green organic light emitting diode for applying example offer raised with the rising of electric current density and driving voltage, and device rises
Bright voltage be 2.7V, voltage be 9.4V, electric current density be 606.72mA/cm2When, device obtains high-high brightness 160256cd/
m2；With the change of running voltage, the chromaticity coordinates of device is almost unchanged；
As shown in figure 3, Fig. 3 is the electric current density-power of the Green organic light emitting diode that the embodiment of the present invention 1 is obtained
Efficiency-current efficiency characteristics curve, as seen from Figure 3, the maximum of the Green organic light emitting diode that the present embodiment is obtained
Current efficiency is 118.48cd/A, and maximum power efficiency is 137.79lm/W；
As shown in figure 4, Fig. 4 is the Green organic light emitting diode that the embodiment of the present invention 1 is obtained in brightness being
20000cd/m2When spectrogram, as seen from Figure 4, spectrum main peak be located at 515nm；When brightness is 20000cd/m2When, device
Chromaticity coordinates for (0.259,0.653).
Embodiment 2
First by the electrode into strips of the ito anode layer laser ablation on ito glass, cleanout fluid, deionized water are then used successively
It is cleaned by ultrasonic 15 minutes and is put into oven for drying.Then the substrate after drying is put into into pretreatment vacuum chamber, in vacuum is
The low-voltage plasma carried out to ito anode 3 minutes with 400 volts of voltage under the atmosphere of 10Pa is transferred into organic steaming after processing
Plating room；
It is 1 × 10 in vacuum-5Pa～2 × 10-5In the organic vapor deposition room of Pa, on the ito layer successively with 0.01nm/s's
Speed evaporation 3nm thick MoO3Anode modification layer 3；With the thick TAPC hole transports-electronics of the speed evaporation 40nm of 0.05nm/s
Barrier layer 4；With speed evaporation Ir (ppy) of 0.0035nm/s3The thick holes of 10nm are obtained with the speed evaporation mCP of 0.05nm/s
Leading luminescent layer 5；With speed evaporation Ir (ppy) of speed evaporation FK306,0.0035nm/s of 0.0001nm/s3And 0.05nm/
The speed evaporation 26DCzPPy of s obtains the leading luminescent layer 6 of the thick electronics of 10nm；Thick with the speed evaporation 40nm of 0.05nm/s
TmPyPB hole barriers-electron transfer layer 7；
Next, above-mentioned unfinished device is transferred to into metal evaporation room, 4 × 10-5Pa～6 × 10-5The vacuum of Pa
With the LiF cathodic modification layers 8 of the speed evaporation 1.0nm thickness of 0.02nm/s under atmosphere；
The thick metal Al cathode layers 9 of 120nm are deposited with the speed of 1.0nm/s on LiF layers finally by mask plate, are prepared
It is ITO-MoO into structure3-TAPC-Ir(ppy)3(7wt%):MCP (93wt%)-FK306 (0.2wt%):Ir(ppy)3
(7wt%):The organic electroluminescence device of 26DCzPPy (92.8wt%)-TmPyPB-LiF-Al.
The present invention applies DC voltage on the organic electroluminescence device for obtaining, and under direct voltage drive, this is organic
Electroluminescent device launches the green glow positioned at 515nm or so；
The present invention carries out performance test to the luminescent device for obtaining, and as a result shows, the green Organic Electricity that the present embodiment is obtained
The brightness of electroluminescence device is raised with the rising of electric current density and driving voltage, and the bright voltage of device is 3.8V, device
High-high brightness is 156832cd/m2；The maximum current efficiency of the Green organic light emitting diode be 123.72cd/A, maximum work
Rate efficiency is 138.74lm/W；When brightness is 20000cd/m2When, the chromaticity coordinates of device for (0.256,0.661)；With work
The change of voltage, the chromaticity coordinates of device are almost unchanged.
Embodiment 3
First by the electrode into strips of the ito anode layer laser ablation on ito glass, cleanout fluid, deionized water are then used successively
It is cleaned by ultrasonic 15 minutes and is put into oven for drying.Then the substrate after drying is put into into pretreatment vacuum chamber, in vacuum is
The low-voltage plasma carried out to ito anode 3 minutes with 400 volts of voltage under the atmosphere of 10Pa is transferred into organic steaming after processing
Plating room；
It is 1 × 10 in vacuum-5Pa～2 × 10-5In the organic vapor deposition room of Pa, on the ito layer successively with 0.01nm/s's
Speed evaporation 3nm thick MoO3Anode modification layer 3；With the thick TAPC hole transports-electronics of the speed evaporation 40nm of 0.05nm/s
Barrier layer 4；With speed evaporation Ir (ppy) of 0.0035nm/s3The thick skies of 10nm are obtained with the speed evaporation TcTa of 0.05nm/s
Dominate luminescent layer 5 in cave；With speed evaporation Ir (ppy) of speed evaporation FIrpic, 0.007nm/s of 0.0003nm/s3With
The speed evaporation 26DCzPPy of 0.1nm/s obtains the leading luminescent layer 6 of the thick electronics of 10nm；With the speed evaporation 40nm of 0.05nm/s
Thick TmPyPB hole barriers-electron transfer layer 7；
Next, above-mentioned unfinished device is transferred to into metal evaporation room, 4 × 10-5Pa～6 × 10-5The vacuum of Pa
With the LiF cathodic modification layers 8 of the speed evaporation 1.0nm thickness of 0.02nm/s under atmosphere；
The thick metal Al cathode layers 9 of 120nm are deposited with the speed of 1.0nm/s on LiF layers finally by mask plate, are prepared
It is ITO-MoO into structure3- TAPC-FCNIrpic (7wt%):TcTa (93wt%)-FIrpic (0.3wt%):FCNIrpic
(7wt%)：The organic electroluminescence device of 26DCzPPY (92.7wt%)-TmPyPB-LiF-Al.
The present invention applies DC voltage on the organic electroluminescence device for obtaining, and under direct voltage drive, this is organic
Electroluminescent device launches the green glow positioned at 515nm or so；
The present invention carries out performance test to the luminescent device for obtaining, and as a result shows, the green Organic Electricity that the present embodiment is obtained
The brightness of electroluminescence device is raised with the rising of electric current density and driving voltage, and the bright voltage of device is 2.8V, device
High-high brightness is 159832cd/m2；The maximum current efficiency of the Green organic light emitting diode be 119.28cd/A, maximum work
Rate efficiency is 133.76lm/W；When brightness is 20000cd/m2When, the chromaticity coordinates of device for (0.261,0.642)；With work
The change of voltage, the chromaticity coordinates of device are almost unchanged.
As seen from the above embodiment, the present invention provide green organic luminescent device in electronics dominate luminescent layer in mixed with
Used as organic sensitized material, the organic sensitized material can play carrier depth to the transient metal complex of energy levels matching
The effect at constraint center, the distribution for being conducive to equilbrium carrier, the luminous interval for widening device, so as to reduce the luminescent device
Running voltage.And the Green organic light emitting diode that the present invention is provided also has higher luminous efficiency, efficiency decay
Slowly, with higher working life.Test result indicate that, the Green organic light emitting diode that the embodiment of the present invention is obtained
Bright voltage is less than 3.0V；Maximum current efficiency is in 120.00cd/A or so；Maximum power efficiency is respectively 135.00lm/W；Device
The high-high brightness of part is up to 160256cd/m2。
And, in the present invention, the organic sensitized material can also play a part of energy transmission ladder, so as to accelerate
Energy transmission from material of main part to luminescent material, caused by alleviating luminescent material carrier capture scarce capacity, material of main part is sent out
Optical issue so that the electroluminescent device that the present invention is provided has higher spectrum stability, and its luminescent properties is to luminescent material
The dependency of doping content is relatively low.Test result indicate that, under the driving of forward voltage, the green that the embodiment of the present invention is obtained has
Organic electroluminescence devices can send the green glow of 515nm；And with the change of running voltage, chromaticity coordinates is almost unchanged.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of Green organic light emitting diode, including the substrate, anode layer, anode modification layer, hole transport for setting gradually-
Electronic barrier layer, the leading luminescent layer in hole, electronics leading luminescent layer, hole barrier-electron transfer layer, cathodic modification layer and negative electrode
Layer；
The leading luminescent layer of the electronics is prepared by the material including following components：
The organic sensitized material of 0.05 wt% ~ 2.0 wt%, the organic sensitized material include it is double (4,6- difluorophenyl pyridinato-N,
C2) pyridinecarboxylic closes iridium and/or double (two fluoro- 2,3- bipyridyls of 4- tertiary butyls -2,6-) acetyl acetone iridium；
The green luminous organic material of 5.0 wt% ~ 15.0 wt%；
The electron type organic host material of surplus；
The electron type organic host material is bis- [3- (9H-9- carbazyls) phenyl] pyridines of 2,6- or 9- (4- tert-butylbenzenes
Base) double (triphenyl the silicon substrate) -9H- carbazoles of -3,6-；
The leading luminescent layer in the hole is prepared by the material including following components：
The green luminous organic material of 5.0 wt% ~ 15.0 wt%；
The cavity type organic host material of surplus；
The cavity type organic host material includes 4,4’-N,N’- two carbazole diphenyl, bis- carbazole -9- base benzene of 1,3-, 9,9'-
(5- (tri-phenyl-silane base) -1,3- phenyl) two -9H- carbazoles, 1,3,5- tri- (9- carbazyls) benzene, 4,4', tri- (carbazoles 9 of 4''
Base) one or more in double (tri-phenyl-silane base) biphenyl of triphenylamine and 1,4-.
2. Green organic light emitting diode according to claim 1, it is characterised in that the green luminous organic material
Iridium, double (2- phenylpyridines) (acetylacetone,2,4-pentanediones) are closed including three (2- phenylpyridines) to close iridium, three [2- (p- aminomethyl phenyl) pyridines] and close
Iridium, double (2- phenylpyridines) [2- (diphenyl -3- bases) pyridine] close iridium, it is facial-three (2- (3- is to dimethyl benzene) pyridine close iridium and
Three (2- phenyl -3- methvl-pyridiniums) close one or more in iridium.
3. the Green organic light emitting diode according to claim 1 ~ 2 any one, it is characterised in that the electronics master
Lead the organic sensitized material that luminescent layer includes 0.1 wt% ~ 1.0 wt%.
4. the Green organic light emitting diode according to claim 1 ~ 2 any one, it is characterised in that the electronics master
Lead the green luminous organic material that luminescent layer includes 5.0 wt% ~ 10.0 wt%.
5. the Green organic light emitting diode according to claim 1 ~ 2 any one, it is characterised in that the electronics master
The thickness for leading luminescent layer is 5 nm ~ 20 nm.
6. Green organic light emitting diode according to claim 1, it is characterised in that in the leading luminescent layer in the hole
Green luminous organic material include three (2- phenylpyridines) close iridium, double (2- phenylpyridines) (acetylacetone,2,4-pentanediones) close iridium, three [2-
(p- aminomethyl phenyl) pyridine] close iridium, double (2- phenylpyridines) [2- (diphenyl -3- bases) pyridine] conjunction iridium, facial-three (2- (3-
To dimethyl benzene) pyridine closes one or more that iridium and three (2- phenyl -3- methvl-pyridiniums) close in iridium.
7. Green organic light emitting diode according to claim 1, it is characterised in that the thickness of the anode modification layer
For 1 nm ~ 10 nm；
The thickness of the hole transport-electronic barrier layer is 30 nm ~ 60 nm；
The thickness of the leading luminescent layer in the hole is 5 nm ~ 20 nm；
The thickness of the hole barrier-electron transfer layer is 30 nm ~ 60 nm；
The thickness of the cathodic modification layer is 0.8 nm ~ 1.2 nm；
The thickness of the cathode layer is 90 nm ~ 300 nm.
8. the preparation method of Green organic light emitting diode described in claim 1 ~ 7 any one, comprises the following steps：
Anode layer is set on substrate；
Anode modification layer, hole transport-electronic barrier layer, hole leading luminescent layer, electricity are deposited with successively in the anode layer surface
Son leading luminescent layer, hole barrier-electron transfer layer, cathodic modification layer and cathode layer, obtain green organic luminescent device.
9. preparation method according to claim 8, it is characterised in that before anode layer surface evaporation anode modification layer
Also include：The substrate for being provided with anode layer is carried out into low pressure plasma process；
The time that the low pressure plasma is processed is 1 min ~ 10 min.
10. preparation method according to claim 8, it is characterised in that be deposited with anode successively in the anode layer surface and repair
Decorations layer, hole transport-electronic barrier layer, the leading luminescent layer in hole, the leading luminescent layer of electronics and hole barrier-electron transfer layer
Vacuum is 1 × 10-5 Pa~2×10-5Pa；
The vacuum of the evaporation cathode decorative layer and cathode layer is 4 × 10-5 Pa~6×10-5 Pa。
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