CN102176512A - Bipolar three-luminous-layes based efficient and stable phosphorescence device - Google Patents
Bipolar three-luminous-layes based efficient and stable phosphorescence device Download PDFInfo
- Publication number
- CN102176512A CN102176512A CN2011100385388A CN201110038538A CN102176512A CN 102176512 A CN102176512 A CN 102176512A CN 2011100385388 A CN2011100385388 A CN 2011100385388A CN 201110038538 A CN201110038538 A CN 201110038538A CN 102176512 A CN102176512 A CN 102176512A
- Authority
- CN
- China
- Prior art keywords
- layer
- luminescent layer
- luminous
- luminescent
- bipolarity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention relates to a bipolar three-luminous-layer based efficient and stable phosphorescence device. In the technical core of the invention, the luminous layer of the device adopts a bipolar three-luminous-layer structure; through adjusting the thickness of the luminous layer and the ratio of a hole-transmission type main body to an electron transmission type main body, a phosphorescence device with high efficiency, high light and long life can be obtained. The invention adopts a conventional host material to invent a three-luminous-layer device which is similar to the structure of a conventional quantum well device. The middle luminous layer of the three-luminous-layer structure has bipolarity, which can greatly improve the luminous efficiency. The device disclosed by the invention can achieve high efficiency and long service life at the same time, thus solving the contradiction between high efficiency and long service life; meanwhile, the device is fundamentally different from the structure of a traditional quantum well device, and has higher practical value. The invention has simple material system and can obtain a device with high efficiency, long service life and stable chromaticity coordinates (CIE).
Description
Technical field
The present invention relates to organic electroluminescent (EL) device, and known radiation there is the organic electroluminescent LED (OLED) of coloured light.Be specifically related to a kind of based on bipolarity three luminescent layer efficient stable phosphorescence devices.
Background technology
In more than ten years in the past, organic electro phosphorescent device is subjected to the insider and more and more pays close attention to.Phosphorescent organic electroluminescent diode (OLED) is because it can utilize triplet and singlet state exciton, and internal quantum efficiency can reach 100% in theory, thereby causes insider's very big concern.Efficient organic electro phosphorescent device reduces concentration quenching and triplet-triplet is buried in oblivion in order to obtain, usually will contain heavy metal phosphorescent emissions body is doped to and obtains high performance electro phosphorescent device in the suitable material of main part, such as [Appl.Phys.Lett.1999,75 (1): 4-6.] such as M.A.Baldo first with Ir (ppy)
3Be doped in host (matrix) material, obtain the maximum external quantum efficiency of device and power efficiency and be respectively 8.0% and 31lm/W.A good device not only shows on high efficiency, the high brightness, also will guarantee the stability of device simultaneously, and use value is so just more arranged.
The various in recent years devices that improve device lifetime are in the news in succession, have developed new host material TSTC doping Ir (ppy) such as [Organic Electronics 9 (2008) 452460] such as Jae-Wook Kang
3And do the hole blocking layer maximum power efficiency with BAlq and obtain 20.6lm/W, MaLS is 160000 hours.And among the contrast experiment with CBP doping IR (ppy)
3And do the hole blocking layer maximum power efficiency with BAlq and obtain 14.4lm/W, MaLS is 37000 hours; CBP doping Ir (ppy)
3And do the hole blocking layer maximum power efficiency with BCP and obtain 40lm/W, MaLS has only 1500 hours.As seen selecting CBP is host, and BAlq does hole blocking layer can obtain the long life-span, but efficient can reduce significantly, and BCP replaces BAlq to do hole blocking layer can obtaining higher efficient, but the life-span is but very short.So obtain the problem that high efficiency, long-life device are still is worth research simultaneously.And to develop new host (matrix) material be not that part is easy to thing, and it is not obvious to compare on industry advantage with conventional material CBP.The quantum well device architecture has been proved to be and can have effectively limited exciton and electric charge in luminescent layer, has improved the efficient of device.For example Shumei Liu etc. [Appl.Phys.Lett.97,083304] is with (F-BT)
2Ir (acac) is doped to and is prepared as follows the quantum well device architecture among the CPB:
(ITO)/and NPB (40nm)/[CPB (5nm) EML (2nm)] n/Bphen (50nm)/LiF (0.8nm)/Al, obtaining maximum current efficient when n=4 is 31.5cd/A.Y.Divayana etc. [Organic Electronics 10 (2009) 320-325] are with red dye Ir (2-phq)
2(acac) be doped to preparation multiple quantum trap structure: NPB/[Ir (2-phq) among the CBP
2(acac) (x nm)/CBP (5nm)] (6cells)/Ir (2-phq)
2(acac) (x nm)/BCP/Alq3, obtaining maximal efficiency is 16.2cd/A.Research to the quantum well device has in the past obtained certain achievement, but their the quantum well device of exploitation does not all set foot in bipolarity, and device is lacked life search, and related quantum well generally all will surpass three layers, complicated process of preparation.
Summary of the invention
The purpose of this invention is to provide a kind ofly,, make device guarantee the long-life simultaneously high efficiency by the design of device architecture based on bipolarity three luminescent layer efficient stable phosphorescence devices.
The objective of the invention is to be achieved through the following technical solutions: based on bipolarity three luminescent layer efficient stable phosphorescence devices, this device comprises:
A) anode that forms on the base material (1);
B) on anode, form hole injection layer (2);
C) on hole injection layer, form hole transmission layer (3);
D) on hole transmission layer, form luminescent layer (11), be used for hole-electron recombination and produce luminous;
E) on luminescent layer, form hole blocking layer (7);
F) on hole blocking layer, form electron transfer layer (8);
G) on electron transfer layer, form electron injecting layer (9) and
H) on electron injecting layer, form negative electrode (10).
Described luminescent layer (11) adopts codeposition type bipolarity three luminous layer structures.
Described luminescent layer (11) structure is three luminescent layer laminated construction EM1 (4)/EM2 (5)/EM3 (6), EM1 (4), EM2 (5), EM3 (6) is that material of main part and luminescent material codeposition are formed, material of main part is selected CBP (N, N '-two carbazole-(1,1 '-biphenyl)-4,4 '-diamines), mCP (N, N-two carbazyls-3,5-benzene), TcTa (4,4 ' 4 " (carbazole-9-yl) triphenylamine-three) one of cavity type host material and TPBI (1; 3,5-three (1-phenyl-1H-benzimidazole 2-yl) benzene); one of UGH2 (to benzene (triphenyl is silica-based) benzene) electron type host material, luminescent material is selected Ir (pi)
3(three (2-phenyl pyrimidine) iridium), Ir (ppy)
3One of (three (2-phenylpyridine) iridium), FIrpic (two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium) phosphorescent light-emitting materials.
Luminescent layer (11) is laminated construction EM1 (4)/EM2 (5)/EM3 (6), CBP:Ir (pi)
3Codeposition is EM1 layer (4), CBP:TPBI:Ir (pi)
3Codeposition is EM2 layer (5), CBP:Ir (pi)
3Codeposition is EM3 layer (6).
Luminescent layer (11) adopts codeposition technology, and wherein EM2 layer (5) adopts three source codeposition technologies, and TPBI: the CBP mass ratio is 25-50: 75-50, Ir (pi)
3: the CBP mass ratio is 6-8: 94-92.
Luminescent layer (11) is laminated construction EM1 (4)/EM2 (5)/EM3 (6), and the thickness of each layer is that EM1 (4) is that 20-30nm/EM3 (6) is 5-10nm for 5-10nm/EM2 (5).
Hole injection layer (2) material is selected 2-TNATA (4,4 ', 4 " (N; N '; N "-(β-Nai Ji) aniline) triphenylamine), thickness is 30-35nm, and hole transmission layer (3) material is selected NPB (N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4,4 '-diamines), thickness is 20-25nm, hole blocking layer (7) material is selected BAlq (two (2-methyl-8-hydroxyl quinoline beautiful jade-N1,08)-(1,1 '-biphenyl-4-hydroxyl) aluminium), thickness is 25-35nm, and electron transfer layer (8) material is selected Alq
3(quinoline aluminum), thickness are 6-15nm, and electron injecting layer (9) and negative electrode (10) are selected LiF and Al (lithium fluoride and aluminium), and thickness is respectively 1nm and 100nm.
The present invention adopts conventional host material to invent a class and three similar luminescent layer devices of conventional quantum well device architecture, and luminescent layer has bipolarity in the middle of this structure, has improved luminous efficiency greatly.The type device can solve high efficiency and the contradiction between the long-life high efficiency the assurance simultaneously of acquisition the long-life, with the quantum well device architecture of reporting in the past essential distinction is arranged, and has high value of practical.Advantage of the present invention is that material system is simple, has obtained high efficiency and long-life device simultaneously, and chromaticity coordinates (CIE) is stable.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is preparation technology's flow chart of the present invention.
Embodiment
It is as follows that device of the present invention prepares used material molecule structural formula:
Embodiment 1 (comparative example)
Device architecture of the present invention as shown in Figure 1, technological process of the present invention as shown in Figure 2,
Based on bipolarity three luminescent layer efficient stable phosphorescence devices, this device comprises:
A) anode 1 that forms on the base material: earlier the ito glass substrate is carried out preliminary treatment, technology is as follows: the ito glass substrate is cleaned repeatedly with acetone, ethanol, deionized water, place the acetone ultrasonic cleaning then, ultrasonic cleaning is repeatedly repeatedly to use ethanol, deionized water again instead, in vacuum drying chamber, dry then, at last to cleaning dry ito glass substrate the inferior ion processing of oxygen atmosphere 10 minutes.
B) deposition hole injection layer 2 on anode: hole injection layer 2 materials select 2-TNATA (4,4 ', 4 " (N, ', N " (β-Nai Ji) aniline) triphenylamine), thickness is 30-35nm.
C) deposition hole transmission layer 3 on hole injection layer: hole transmission layer 3 materials are selected NPB (N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4,4 '-diamines), and thickness is 20-25nm.
D) deposit bipolarity three luminescent layers 11 successively on hole transmission layer, be used for hole-electron recombination and produce luminous: luminescent layer 11 adopts codeposition type bipolaritys three luminous layer structures.
Luminescent layer 11 structures are laminated construction EM1/EM2/EM3, EM1, EM2, EM3 are that material of main part and luminescent material codeposition are formed, material of main part is selected CBP (N, N ' two carbazoles-(1,1 '-biphenyl)-4,4 '-diamines), mCP (N, N-two carbazyls-3,5-benzene), TcTa (4, (carbazole-9-yl) triphenylamine-three) etc. 4 ', 4 " one of cavity type host material and TPBI (1,3; one of 5-three (1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene), UGH2 electron type host materials such as (to phenyl (triphenyl is silica-based) benzene), the luminescent layer material is selected Ir (pi)
3(three (2-phenyl pyrimidine) iridium), Ir (ppy)
3(two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium) wait one of other phosphorescent light-emitting materials, CBP:Ir (pi) for (three (2-phenylpyridine) iridium), FIrpic
3Codeposition is an EM1 layer 4, CBP:TPBI:Ir (pi)
3Codeposition is an EM2 layer 5, CBP:Ir (pi)
3Codeposition is an EM3 layer 6.
Luminescent layer is laminated construction EM1/EM2/EM3, and the thickness of each layer is EM1 (5-10nm)/EM2 (20-30nm)/EM3 (5-10nm).
Luminescent layer adopts codeposition technology, and wherein EM2 adopts three source codeposition technologies, and CBP: the TPBI mass ratio is 25-50: 75-50, luminescent layer Ir (pi)
3: the CBP mass ratio is 6-8: 94-92.
E) deposition hole blocking layer 7 on luminescent layer: hole blocking layer 7 materials are selected BAlq (two (2-methyl-oxine-N1,08)-(1,1 '-biphenyl-4-hydroxyl) aluminium), and thickness is 25-35nm.
F) deposition electron transfer layer 8 on hole blocking layer: electron transfer layer 8 materials are selected Alq
3(quinoline aluminum), thickness are 6-15nm.
G) deposition electron injecting layer 9 on electron transfer layer: electron injecting layer 9 materials are selected LiF (lithium fluoride), and thickness is 1nm.
H) deposition cathode 10 on electron injecting layer: negative electrode 10 materials are selected Al (aluminium), and thickness is 100nm.Encapsulation, test.Finish vacuum deposition process.
Pretreated ito glass substrate carries out vacuum deposition process according to the device architecture that designs and is prepared as follows device:
ITO/2-TNATA (35nm)/NPB (20nm)/CBP: Ir (pi)
3(93: 7,35nm ,/BAlq (25nm)/Alq
3(12nm)/and LiF (1nm)/Al (100nm), finish vacuum deposition process.Below gross thickness, the Ir (pi) of luminescent layer in related single-shot photosphere, two luminescent layer or three luminescent layers among each embodiment
3Identical therewith with the method for expressing of matrix (host) mass percent, repeat no more.
Embodiment 2 (comparative example)
The following device architecture of design on the basis of embodiment 1 device preparation technology:
ITO/2-TNATA (35nm)/NPB (20nm)/CBP: Ir (pi)
3(, 93: 7,18nm)/TPBI: Ir (pi)
3(93: 7,7nm)/TPBI (7nm)/Alq
3(25nm)/and LiF (1nm)/Al (100nm), finish vacuum deposition process.
Embodiment 3 (comparative example)
On the basis of embodiment 1 device preparation technology, be prepared as follows device architecture:
ITO/2-TNATA (35nm)/NPB (20nm)/CBP: TPBI: Ir (pi)
3(70: 23: 7,40nm)/BAlq (35nm)/Alq
3(8nm)/and LiF (1nm)/Al (100nm), finish vacuum deposition process.
Embodiment 4 (example)
The following device architecture of invention on the basis of embodiment 1 device preparation technology:
ITO/2-TNATA (35nm)/NPB (20nm)/CBP: Ir (pi)
3(93: 7,5nm)/CBP: TPBI: Ir (pi)
3(70: 23: 7,25nm) CBP: Ir (pi)
3(93: 7,5nm)/BAlq (35nm)/Alq
3(6nm)/and LiF (1nm)/Al (100nm), finish vacuum deposition process.
Embodiment 5 (example)
The following device architecture of invention on the basis of embodiment 1 device preparation technology:
ITO/2-TNATA (35nm)/NPB (20nm)/CBP: Ir (pi)
3(93: 7,5nm)/CBP: TPBI: Ir (pi)
3(70: 23: 7,30nm) CBP: Ir (pi)
3(93: 7,5nm)/BAlq (25nm) //Alq
3(12nm)/and LiF (1nm)/Al (100nm), finish vacuum deposition process.
Embodiment 6 (example)
The following device architecture of invention on the basis of embodiment 1 device preparation technology:
ITO/2-TNATA (35nm)/NPB (20nm)/CBP: Ir (pi))
3(93: 7,5nm)/CBP: TPBI: Ir (pi)
3(70: 23: 7,25nm) CBP: Ir (pi)
3(93: 7,5nm)/BAlq (25nm)/Alq
3(15nm)/and LiF (1nm)/Al (100nm), finish vacuum deposition process.
With the preparation device in a conventional manner at H
2O, O
2Content is less than the N of 1ppm
2Encapsulate under the atmosphere.
The photoelectric properties of embodiment 1-6, chromaticity coordinates and life test the results are shown in following table, the result shows that embodiment 4,5,6 can both obtain the device of high efficiency, long-life, stable color coordinate simultaneously, especially to obtain high-high brightness efficient be 40.3cd/A to embodiment 6 devices, and the life-span is 30906 hours.
Claims (7)
1. based on bipolarity three luminescent layer efficient stable phosphorescence devices, it is characterized in that: this device comprises:
A) anode that forms on the base material (1);
B) on anode, form hole injection layer (2);
C) on hole injection layer, form hole transmission layer (3);
D) on hole transmission layer, form luminescent layer (11), be used for hole-electron recombination and produce luminous;
E) on luminescent layer, form hole blocking layer (7);
F) on hole blocking layer, form electron transfer layer (8);
G) on electron transfer layer, form electron injecting layer (9) and
H) on electron injecting layer, form negative electrode (10).
2. as claimed in claim 1 based on bipolarity three luminescent layer efficient stable phosphorescence devices, it is characterized in that: described luminescent layer (11) adopts codeposition type bipolarity three luminous layer structures.
3. as claimed in claim 1 or 2 based on bipolarity three luminescent layer efficient stable phosphorescence devices, it is characterized in that: described luminescent layer (11) structure is three luminescent layer laminated construction EM1 (4)/EM2 (5)/EM3 (6), EM1 (4), EML2 (5), EM3 (6) is that material of main part and luminescent material codeposition are formed, material of main part is selected CBP (N, N '-two carbazole-(1,1 '-biphenyl)-4,4 '-diamines), mCP (N, N-two carbazyls-3,5-benzene), TcTa (4,4 '; 4 "-three (carbazole-9-yl) triphenylamine) one of cavity type host material and TPBI (1,3,5-three (1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene), one of UGH2 (to benzene (triphenyl is silica-based) benzene) electron type host material, luminescent material is selected Ir (pi)
3(three (2-phenyl pyrimidine) iridium), Ir (ppy)
3One of (three (2-phenylpyridine) iridium), FIrpic (two (4,6-difluorophenyl pyridine-N, C2) the pyridine formyl closes iridium) phosphorescent light-emitting materials.
4. as claimed in claim 1 or 2 based on bipolarity three luminescent layer efficient stable phosphorescence devices, it is characterized in that: luminescent layer (11) is laminated construction EM1 (4)/EM2 (5)/EM3 (6), CBP:Ir (pi)
3Codeposition is EM1 layer (4), CBP:TPBI:Ir (pi)
3Codeposition is EM2 layer (5), CBP:Ir (pi)
3Codeposition is EM3 layer (6).
5. as claimed in claim 4 based on bipolarity three luminescent layer efficient stable phosphorescence devices, it is characterized in that: luminescent layer (11) adopts codeposition technology, wherein EM2 layer (5) adopts three source codeposition technologies, and TPBI: the CBP mass ratio is 25-50: 75-50, Ir (pi)
3: the CBP mass ratio is 6-8: 94-92.
6. as claimed in claim 1 or 2 based on bipolarity three luminescent layer efficient stable phosphorescence devices, it is characterized in that: luminescent layer (11) is laminated construction EM1 (4)/EM2 (5)/EM3 (6), and the thickness of each layer is that EM1 (4) is that 20-30nm/EM3 (6) is 5-10nm for 5-10nm/EM2 (5).
7. as claimed in claim 1 based on bipolarity three luminescent layer efficient stable phosphorescence devices, it is characterized in that: hole injection layer (2) material is selected 2-TNATA (4,4 ', 4 " (N, N ', N " (β-Nai Ji) aniline) triphenylamine), thickness is 30-35nm, hole transmission layer (3) material is selected NPB (N, N '-two (1-naphthyl)-N, N '-diphenyl-1,1 '-biphenyl-4,4 '-diamines), thickness is 20-25nm, and hole blocking layer (7) material is selected BAlq (two (2-methyl-oxines-N1,08)-(1,1 '-biphenyl-4-hydroxyl) aluminium), thickness is 25-35nm, and electron transfer layer (8) material is selected Alq
3(quinoline aluminum), thickness are 6-15nm, and electron injecting layer (9) and negative electrode (10) are selected LiF and Al (lithium fluoride and aluminium), and thickness is respectively 1nm and 100nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100385388A CN102176512A (en) | 2011-02-15 | 2011-02-15 | Bipolar three-luminous-layes based efficient and stable phosphorescence device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100385388A CN102176512A (en) | 2011-02-15 | 2011-02-15 | Bipolar three-luminous-layes based efficient and stable phosphorescence device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102176512A true CN102176512A (en) | 2011-09-07 |
Family
ID=44519641
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100385388A Pending CN102176512A (en) | 2011-02-15 | 2011-02-15 | Bipolar three-luminous-layes based efficient and stable phosphorescence device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102176512A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367649A (en) * | 2012-04-11 | 2013-10-23 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN103367648A (en) * | 2012-04-11 | 2013-10-23 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and manufacturing method thereof |
| CN103378311A (en) * | 2012-04-11 | 2013-10-30 | 海洋王照明科技股份有限公司 | Organic light emission diode device with quantum well structure and preparation method thereof |
| CN104177426A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Blue phosphorescence iridium metal complex, preparation method thereof, and organic electroluminescent device |
| CN110165065A (en) * | 2019-06-05 | 2019-08-23 | 太原理工大学 | A kind of high efficiency/chromaticity matter/color stability lamination white organic LED |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1787250A (en) * | 2005-11-01 | 2006-06-14 | 友达光电股份有限公司 | Phosphorescence organic lighting assemply, display, all colour display |
| WO2009142030A1 (en) * | 2008-05-19 | 2009-11-26 | シャープ株式会社 | Organic electroluminescent device, display device and illuminating device |
| WO2010026859A1 (en) * | 2008-09-05 | 2010-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
-
2011
- 2011-02-15 CN CN2011100385388A patent/CN102176512A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1787250A (en) * | 2005-11-01 | 2006-06-14 | 友达光电股份有限公司 | Phosphorescence organic lighting assemply, display, all colour display |
| WO2009142030A1 (en) * | 2008-05-19 | 2009-11-26 | シャープ株式会社 | Organic electroluminescent device, display device and illuminating device |
| WO2010026859A1 (en) * | 2008-09-05 | 2010-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and electronic device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103367649A (en) * | 2012-04-11 | 2013-10-23 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| CN103367648A (en) * | 2012-04-11 | 2013-10-23 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and manufacturing method thereof |
| CN103378311A (en) * | 2012-04-11 | 2013-10-30 | 海洋王照明科技股份有限公司 | Organic light emission diode device with quantum well structure and preparation method thereof |
| CN104177426A (en) * | 2013-05-22 | 2014-12-03 | 海洋王照明科技股份有限公司 | Blue phosphorescence iridium metal complex, preparation method thereof, and organic electroluminescent device |
| CN110165065A (en) * | 2019-06-05 | 2019-08-23 | 太原理工大学 | A kind of high efficiency/chromaticity matter/color stability lamination white organic LED |
| CN110165065B (en) * | 2019-06-05 | 2021-07-02 | 太原理工大学 | High-efficiency/color quality/color stability laminated white organic light-emitting diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102136550B (en) | White light organic electroluminescent device and preparation method thereof | |
| CN102694131B (en) | Organic light-emitting device, manufacturing method thereof and display device | |
| CN101630721B (en) | Organic electroluminescent component | |
| CN104393181B (en) | Red organic electroluminescent device and preparation method thereof | |
| CN104835916A (en) | Highly-efficient organic electroluminescent device based on fluorescence doped luminescent layer | |
| CN103594659A (en) | Organic electroluminescent device and preparation method thereof | |
| CN108832008B (en) | Application of exciplex in organic light-emitting diode | |
| CN102779948B (en) | White color organic electroluminescence device and manufacture method thereof | |
| CN105449109A (en) | Organic electroluminescence device capable of simulating sunlight and preparation method thereof | |
| CN108011047A (en) | A kind of glow organic electroluminescent device | |
| CN102214798B (en) | White light organic electroluminescent device and manufacturing method thereof | |
| CN108666432A (en) | A kind of Organic Light Emitting Diode containing multistage organic semiconductor heterojunction | |
| CN102176512A (en) | Bipolar three-luminous-layes based efficient and stable phosphorescence device | |
| CN107452887A (en) | A kind of fluorescent/phosphorescent mixed white light OLED | |
| CN102064282B (en) | Organic electroluminescent device | |
| CN104078611A (en) | White organic light-emitting diode and manufacturing method thereof | |
| CN113066935A (en) | White organic electroluminescent device with double-excited-base compound as main body | |
| CN102842682A (en) | Stacked organic electroluminescence device and manufacturing method thereof | |
| CN104269496B (en) | White organic light-emitting device and preparation method thereof | |
| CN114725293B (en) | Stable white light OLED (organic light emitting diode) with multi-luminescent layer mixed matrix structure without transmission layer | |
| CN104269500B (en) | Red organic electroluminescent device and preparation method thereof | |
| CN103633250A (en) | Organic electroluminescent device and preparation method thereof | |
| CN109256472A (en) | A kind of white light organic electroluminescent device of the double precursor structures of bilayer without wall | |
| Chen et al. | High-quality all-fluorescent white organic light-emitting diodes obtained by balancing carriers with hole limit layer | |
| CN104078571A (en) | White organic light-emitting diode and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110907 |