CN104282737B - High-integration-level H-shaped source, drain and gate auxiliary control U-shaped channel high-mobility-ratio junction-free transistor - Google Patents
High-integration-level H-shaped source, drain and gate auxiliary control U-shaped channel high-mobility-ratio junction-free transistor Download PDFInfo
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 66
- 230000010354 integration Effects 0.000 claims description 38
- 239000012212 insulator Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 4
- 239000002210 silicon-based material Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 13
- 230000009467 reduction Effects 0.000 abstract description 7
- 238000005728 strengthening Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 20
- 238000000034 method Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 6
- 230000005669 field effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
The invention relates to a high-integration-level H-shaped source, drain and gate auxiliary control U-shaped channel high-mobility-ratio junction-free transistor. Two independently-controlled gate electrodes including the H-shaped auxiliary control gate electrode and the gate electrode are adopted, the doping concentration of a device is guaranteed to improve the mobility ratio, the device mobility ratio reduction and the device stability reduction caused by strengthening of the random scattering effect under the high doping concentration is avoided, and meanwhile the resistance of source and drain areas is effectively reduced through the H-shaped auxiliary control gate electrode, so that the contradictions that the source and drain resistance will be increased if the doping concentration of a channel of a common junction-free transistor is excessively low, and the device mobility ratio reduction and the device stability reduction will be caused if the doping concentration is excessively high are overcome; meanwhile, U-shaped monocrystalline silicon serves a channel part of the device; compared with a common plane structure, on the premise that the chip area is not increased additionally, the effective channel length is obviously increased to reduce the short channel effect of the device under the deep nanoscale, and therefore the high-integration-level H-shaped source, drain and gate auxiliary control U-shaped channel high-mobility-ratio junction-free transistor is suitable for application and popularization.
Description
Technical field
The invention belongs to super large-scale integration manufacture field, and in particular to one kind is applied to the integrated electricity of superelevation integrated level
The high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body tubular construction of road manufacture.
Background technology
The elementary cell MOSFETs transistors of integrated circuit with size continuous reduction, it is necessary to several nanometers away from
Form extremely steep source electrode and drain electrode PN junction from the interior concentration difference for realizing multiple orders of magnitude, such concentration gradient for doping and
Technology for Heating Processing has high requirement.Can effectively be solved by the field-effect transistor without knot being made in SOI wafer above-mentioned
Problem, using many son conductings, the source region of device, drain region and channel region have identical high-dopant concentration to nodeless mesh body pipe, profit
The characteristics of with silicon thin film is made into sufficiently thin, by taking N-type device as an example, when grid is in reverse biased, because silicon thin film is very thin,
The electronics of channel region is easy to be depleted in the presence of grid electric field, so as to realize the blocking state of device.As grid is inclined
The increase of pressure, many sons of channel region exhaust releasing, and form electron accumulation to realize the unlatching of device in interface.However,
The raceway groove of this high-dopant concentration can cause the mobility of device to be decreased obviously, and impurity random scatter can cause the reliability of device
Property is severely impacted.To improve the mobility and reliability without junction device, it is necessary to reduce the doping concentration of silicon thin film, so
And the reduction of doping concentration can bring the increase of source and drain resistance and influence the opening feature of device.Additionally, based on planar structure
Common crystal tubular construction, with the continuous shortening of channel length, short-channel effect gradually strengthens, and device is difficult to turn off.Therefore, it is
The above mentioned problem existing for existing transistor is solved, need to be designed to overcome short-channel effect and with high integration migration high
The nodeless mesh body pipe of rate.
The content of the invention
Goal of the invention
To solve the contradictory relation that exists between nodeless mesh body pipe transfer rate and source and drain resistance and overcoming common plane knot
The short-channel effect of structure transistor, the present invention provide it is a kind of have high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility without
Transistor structure.
Technical scheme
The present invention is achieved through the following technical solutions：
A kind of high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe, including the silicon of SOI wafer is served as a contrast
Bottom, the silicon substrate top of SOI wafer is the insulating barrier of SOI wafer；It is characterized in that：The insulating barrier top of SOI wafer is U-shaped list
Crystal silicon, the surface of U-shaped monocrystalline silicon has gate insulator, is isolated by insulating medium layer between adjacent U-shaped monocrystalline silicon；Grid
Surface of insulating layer has gate electrode, and gate electrode top is H-shaped auxiliary control gate electrode, is provided between H-shaped auxiliary control gate electrode and gate electrode
Insulating medium layer, and isolated with grid electrode insulating by insulating medium layer, the upper surface of U-shaped monocrystalline silicon is deposited with dielectric
Layer, and the insulating medium layer of U-shaped monocrystalline silicon two ends upper surface is etched away by etching technics, and injected in the through hole for etching away
Metal is generated as source electrode and drain electrode respectively.
H-shaped auxiliary control gate electrode and gate electrode the two electrodes are the electrode of control independent of one another, and the two passes through dielectric
Layer realize it is insulated from each other, wherein H-shaped auxiliary control gate electrode the upper end of two vertical components of U-shaped monocrystalline silicon is formed three faces around,
Two electric fields of the upper end of vertical component, potential and Carrier Profiles for being pointed to U-shaped monocrystalline silicon play major control, and grid
Then positioned at the lower section of H-shaped auxiliary control gate electrode, vertical component and horizontal component to U-shaped monocrystalline silicon in addition to two ends are formed electrode
Three faces are around and electric field to its inside, potential and Carrier Profile play major control.Wherein H-shaped auxiliary control gate electrode begins
Be in high potential eventually, the part at U-shaped monocrystalline silicon upper surface two ends is formed electron accumulation, thus reduce as device source area and
The resistance of the upper surface of the U-shaped monocrystalline silicon of drain region, makes two ends all the time in low resistive state, i.e., effectively reduce source and drain resistance.
U-shaped monocrystalline silicon is less than 10 as the raceway groove part of device by with doping concentration17cm-3High mobility monocrystalline silicon
Material is formed, in contrast to common high-dopant concentration nodeless mesh body pipe, the raceway groove of device partially due to doping concentration is relatively low, therefore
Being decreased obviously for device mobility will not be caused due to impurity scattering effect enhancing under high concentration.
Gate insulator is insulating materials dielectric layer or silicon dioxide layer with high-k.
Has gate insulator in position of the U-shaped monocrystalline silicon in addition to the surface that both sides are in contact with insulating medium layer；Grid
Has gate electrode in position of the insulating barrier in addition to the surface that both sides are in contact with insulating medium layer.
Advantage and effect
The invention has the advantages that and beneficial effect：
1. because the present invention is using gate electrodes of the two controls independently of one another of H-shaped auxiliary control gate electrode and gate electrode so that
The raceway groove of device under low doping concentration, ensure high mobility while, still can be by the independence of H-shaped auxiliary control gate electrode
Control action obtains relatively low source and drain resistance, and so as to efficiently solve, common nodeless mesh body pipe channel dopant concentration is too low to be brought
The increase of source and drain resistance and influence this problem of the opening feature of device.
2. the present invention uses U-shaped monocrystalline silicon as the raceway groove part of device, the vertical component institute shape of U-shaped monocrystalline silicon both sides
Into raceway groove be located at the lower section of source electrode and drain electrode respectively, in contrast to common plane structure, be not take up extra chip face
On the premise of product, the length of effective channel of device is increased, hence help to the influence that device overcomes short-channel effect.
3. H-shaped auxiliary control gate electrode of the present invention and gate electrode, three are formed with each several part to U-shaped monocrystalline silicon
Face around architectural feature, the architectural feature causes H-shaped auxiliary control gate electrode and gate electrode to the electric field in U-shaped monocrystalline silicon, potential
Control ability with Carrier Profile is strengthened, and is conducive to auxiliary to improve the influence that device overcomes short-channel effect, and favorably
In the Sub-Threshold Characteristic for improving device, make device that there is steeper sub-threshold slope to obtain more preferable switching characteristic.
Brief description of the drawings
Fig. 1 be high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention on soi substrates
The three dimensional structure diagram of formation；
Fig. 2 be high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention on soi substrates
The top view of formation；
Fig. 3 is peeling off insulation for high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention
Three dimensional structure diagram after dielectric layer surface portion on the device；
Fig. 4 is peeling off insulation for high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention
Top view after dielectric layer surface portion on the device；
Fig. 5 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention on above-mentioned basis
On peeled off three dimensional structure diagram after source electrode and drain electrode；
Fig. 6 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention on above-mentioned basis
On peeled off top view after source electrode and drain electrode；
Fig. 7 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention on above-mentioned basis
On peeled off three dimensional structure diagram after H-shaped auxiliary control gate electrode；
Fig. 8 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention on above-mentioned basis
On peeled off top view after H-shaped auxiliary control gate electrode；
Fig. 9 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention on above-mentioned basis
On peeled off insulating medium layer and be located at three dimensional structure diagram between H-shaped auxiliary control gate electrode and gate electrode after part；
Figure 10 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention on above-mentioned basis
On peeled off insulating medium layer and be located at top view between H-shaped auxiliary control gate electrode and gate electrode after part；
Figure 11 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention on above-mentioned basis
On peeled off three dimensional structure diagram after gate electrode；
Figure 12 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention on above-mentioned basis
On peeled off top view after gate electrode；
Figure 13 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention on above-mentioned basis
On peeled off three dimensional structure diagram after gate insulator；
Figure 14 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention on above-mentioned basis
On peeled off top view after gate insulator；
Figure 15 to Figure 32 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body tubular construction of the present invention
One process chart of instantiation of unit preparation method.
Figure 15 is step one schematic diagram,
Figure 16 is step one top view,
Figure 17 is step 2 schematic diagram,
Figure 18 is step 2 top view,
Figure 19 is step 3 schematic diagram,
Figure 20 is step 3 top view,
Figure 21 is step 4 schematic diagram,
Figure 22 is step 4 top view,
Figure 23 is step 5 schematic diagram,
Figure 24 is step 5 top view,
Figure 25 is step 6 schematic diagram,
Figure 26 is step 6 top view,
Figure 27 is step 7 schematic diagram,
Figure 28 is step 7 top view,
Figure 29 is step 8 schematic diagram,
Figure 30 is step 8 top view,
Figure 31 is step 9 schematic diagram,
Figure 32 is step 9 top view.
Reference is said：
1st, source electrode；2nd, drain electrode；3rd, H-shaped auxiliary control gate electrode；4th, gate electrode；5th, gate insulator；6th, insulating medium layer；
7th, U-shaped monocrystalline silicon；8th, the insulating barrier of SOI wafer；9th, the silicon substrate of SOI wafer.
Specific embodiment
The present invention is described further below in conjunction with the accompanying drawings：
The present invention provides a kind of high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe, by H-shaped
The collective effect of auxiliary control gate electrode 3 and gate electrode 4 the two electrodes of control independently of one another, under conditions of low doping concentration,
Realize high mobility, the nodeless mesh body pipe of low source and drain resistance.By taking N-type as an example, when device works, H-shaped auxiliary control gate electrode 3 is all the time
Constant high potential is kept, makes to be located at source electrode 1 and the lower section of drain electrode 2 respectively corresponding to the left and right sides of H-shaped auxiliary control gate electrode 3
The left and right two ends of U-shaped monocrystalline silicon 7 form electron accumulation, the electronics for being accumulated enhances the U-shaped as device source region and drain region
The conductive capability at the left and right two ends of monocrystalline silicon 7, that is, significantly reduce source and drain resistance；And gate electrode 4 is opened for actual control device
The gate electrode for opening or turning off, when gate electrode 4 be in low potential when, U-shaped monocrystalline silicon 7 positioned at the left and right sides of gate electrode 4 and lower section
The electronics in region be drained under the field effect of gate electrode 4, the U-shaped raceway groove for being formed U-shaped monocrystalline silicon 7 is in pinch off shape
State, therefore now device is off state, with gradually rising for the current potential of gate electrode 4, the U-shaped ditch that U-shaped monocrystalline silicon 7 is formed
Electron number in road also gradually increases therewith, when gate electrode 4 is in high potential, in the presence of field effect, and a large amount of electronics
It is formed at U-shaped monocrystalline silicon 7 and forms electron accumulation with the interface of gate insulator 5, makes the U-shaped raceway groove that U-shaped monocrystalline silicon 7 is formed
In opening, therefore now device is in opening, realizes thering is high integration H-shaped by above-mentioned specific embodiment
Source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe.
To reach device function of the present invention, this high integration H-shaped source and drain grid auxiliary control U-shaped proposed by the invention
Raceway groove high mobility nodeless mesh body pipe, its core texture is characterized as：
1., to make device have high mobility, U-shaped monocrystalline silicon 7 is less than 10 by doping concentration17cm-3High mobility monocrystalline
Silicon materials are formed；It is to strengthen H-shaped auxiliary control gate electrode 3 and gate electrode 4 to each several part carrier concentration profile in U-shaped monocrystalline silicon 7
Control ability, gate insulator 5 can be the insulating materials dielectric layer with high-k but it is also possible to be silica
Layer.
2. H-shaped auxiliary control gate electrode 3 faces the both sides vertical component of U-shaped monocrystalline silicon 7 as one of the gate electrode of independent control
The two ends of nearly source electrode 1 and drain electrode 2, and major control is served to it, the H-shaped architectural feature for being used makes H-shaped auxiliary control grid
The two ends that electrode 3 closes on source electrode 1 and drain electrode 2 to the both sides vertical component of U-shaped monocrystalline silicon 7 respectively form three faces around helping
In enhancing H-shaped auxiliary control gate electrode 3 to source region and the control ability of drain region electric field, potential and Carrier Profile, when device works
Constant high potential is remained, the left and right two ends of U-shaped monocrystalline silicon 7 is formed concentration higher than 1020cm-3Electron accumulation, accumulated
Electronics enhance and close on source electrode 1 and drain electrode 2 as the both sides vertical component of U-shaped monocrystalline silicon 7 in device source region and drain region
The conductive capability at two ends, that is, significantly reduce source and drain resistance；
3. gate electrode 4 as independent control one of gate electrode, be gate electrode that actual control device is switched on or off,
The two ends for closing on source electrode 1 and drain electrode 2 of the both sides vertical component to being controlled except H-shaped auxiliary control gate electrode 3 in U-shaped monocrystalline silicon 7
Other parts in addition play major control, when gate electrode 4 is in low potential, U-shaped monocrystalline silicon 7 positioned at gate electrode 4 or so
The electronics in the region of both sides and lower section is drained under the field effect of gate electrode 4, makes the U-shaped raceway groove that U-shaped monocrystalline silicon 7 is formed
In pinch off state, therefore now device is off state, with gradually rising for the current potential of gate electrode 4, the institute of U-shaped monocrystalline silicon 7
Electron number in the U-shaped raceway groove of formation also gradually increases therewith, when gate electrode 4 is in high potential, in the effect of field effect
Under, largely electronically form and form electron accumulation in the interface of U-shaped monocrystalline silicon 7 and gate insulator 5, make 7 shapes of U-shaped monocrystalline silicon
Into U-shaped raceway groove be in opening, therefore now device is in opening, and gate electrode 4 equally formed to U-shaped monocrystalline silicon 7
Three faces around, therefore enhance control ability of the gate electrode 4 to the internal electric field of U-shaped monocrystalline silicon 7, potential and Carrier Profile, help
In the short-channel effect of reduction device, and sub-threshold slope is improved to improve the switching characteristic of device.
4. gate electrode 4 is insulated from each other by insulating medium layer 6 therebetween with H-shaped auxiliary control gate electrode 3.
5. the present invention uses U-shaped monocrystalline silicon as the raceway groove part of device, and the vertical channel portion of its both sides is located at respectively
The lower section of source electrode and drain electrode, in contrast to common plane structure, on the premise of extra chip area is not take up, increased
The length of effective channel of device, hence helps to the influence that device overcomes short-channel effect.
The present invention is described further below in conjunction with the accompanying drawings：
Such as Fig. 1 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe of the present invention in SOI substrate
The three dimensional structure diagram of upper formation；Fig. 2 is high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh of the present invention
The top view that body pipe is formed on soi substrates；Fig. 3 be high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility of the present invention without
Three dimensional structure diagram of the junction transistors after insulating medium layer surface portion on the device has been peeled off；Specifically include SOI brilliant
Round silicon substrate 9, the top of silicon substrate 9 of SOI wafer is the insulating barrier 8 of SOI wafer；The top of insulating barrier 8 of SOI wafer is U-shaped
Monocrystalline silicon 7, the surface of U-shaped monocrystalline silicon 7 has gate insulator 5, between adjacent U-shaped monocrystalline silicon 7 by insulating medium layer 6 every
From；The surface of gate insulator 5 has gate electrode 4, and the top of gate electrode 4 is H-shaped auxiliary control gate electrode 3, and by insulating medium layer 6 with
Gate electrode 4 is dielectrically separated from, and the upper surface of U-shaped monocrystalline silicon 7 is deposited with insulating medium layer 6, and etches away U-shaped by etching technics
The insulating medium layer 6 of the two ends upper surface of monocrystalline silicon 7, and injection metal is generated as the He of source electrode 1 respectively in the through hole for etching away
Drain electrode 2；Such as a kind of high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe that Fig. 4 is provided for the present invention
Peeling off three dimensional structure diagram of the insulating medium layer 6 after the part of device upper surface, source electrode 1 and drain electrode 2；Figure
5 are peeling off insulation for a kind of high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe that the present invention is provided
Top view after dielectric layer 6, source electrode 1 and drain electrode 2；Fig. 6 is auxiliary for a kind of high integration H-shaped source and drain grid that the present invention is provided
Control U-shaped raceway groove high mobility nodeless mesh body pipe is peeling off insulating medium layer 6 in device upper surface and positioned at H-shaped auxiliary control gate electrode
The three dimensional structure diagram after part, source electrode 1, drain electrode 2 and H-shaped auxiliary control gate electrode 3 between 3 and gate electrode 4；Fig. 7
For a kind of high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe that the present invention is provided is peeling off insulation
Part of the dielectric layer 6 in device upper surface and between H-shaped auxiliary control gate electrode 3 and gate electrode 4, source electrode 1, drain electrode 2 and H
Top view after shape auxiliary control gate electrode 3；The doping concentration of U-shaped monocrystalline silicon 7 is set below 1017cm-3；It is enhancing H-shaped auxiliary control
To the control ability of the internal electric field of U-shaped monocrystalline silicon 7, potential and Carrier Profile, gate insulator 5 can be with for gate electrode 3 and gate electrode 4
It is insulating materials dielectric layer, or common earth silicon material with high-k.
The list of this high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe proposed by the invention
The specific manufacturing technology steps of unit and array are as follows：
Step one, one doping concentration of offer are less than 1017cm-3SOI wafer, the lower section of SOI wafer is SOI wafer
Silicon substrate 9, SOI wafer top is the monocrystalline silicon thin film for forming U-shaped monocrystalline silicon 7, is therebetween the insulating barrier of SOI wafer
8, form a series of as shown in Figure 15, Figure 16 on the insulating barrier 8 of the SOI wafer for being provided by techniques such as photoetching, etchings, institute
The rectangular-shape for showing for forming U-shaped monocrystalline silicon 7；
Step 2, as shown in Figure 17, Figure 18, above wafer after depositing dielectric, throw flat surface formed insulation
Dielectric layer 6, uses as isolating between device cell；
Step 3, as shown in Figure 19, Figure 20, by etching technics, the monocrystalline silicon thin film of rectangular-shape is etched into be had
The monocrystalline silicon thin film of letter U shape, U-shaped monocrystalline silicon 7 is further generated with this；
Step 4, as shown in Figure 21, Figure 22, etching technics is continued through on the basis of the above-described procedure by monocrystalline silicon thin film two
The part of side is removed, and the U-shaped monocrystalline silicon 7 as device channel portion is ultimately formed with this；
Step 5, as shown in Figure 23, Figure 24, on the basis of the above-described procedure in crystal column surface deposit with high-k
Dielectric, throws flat surface；
Step 6, as shown in Figure 25, Figure 26, middle and both sides are etched away by etching technics on the basis of the above-described procedure
Dielectric with high-k, gate insulator 7 is generated with this；
Step 7, as shown in Figure 27, Figure 28, on the basis of above-mentioned steps crystal column surface deposit metal or polysilicon,
Gate electrode 4 is generated by etching technics after throwing flat surface；
Step 8, as shown in Figure 29, Figure 30, deposit dielectric in crystal column surface on the basis of the above-described procedure, throw flat table
Insulating medium layer 6 is further generated by etching technics behind face.
Step 9, as shown in Figure 31, Figure 32, deposit metal or polysilicon again in crystal column surface on the basis of the above-described procedure
And flat surface is thrown, H-shaped auxiliary control gate electrode 3 is generated with this；
Step 10, in crystal column surface deposit dielectric again further to generate dielectric on the basis of the above-described procedure
Layer 6, the insulating medium layer 6 of the two ends upper surface of U-shaped monocrystalline silicon 7 is etched away to generate source, leakage after throwing flat surface by etching technics
Through hole, and respectively source, leakage through hole in inject metal to generate source electrode 1 and drain electrode 2, as shown in Figure 1 and Figure 2, by above-mentioned
Step ultimately generates high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe proposed by the invention.
Claims (5)
1. a kind of silicon substrate of high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe, including SOI wafer
（9）, the silicon substrate of SOI wafer（9）Top is the insulating barrier of SOI wafer（8）；It is characterized in that：The insulating barrier of SOI wafer（8）
Top is U-shaped monocrystalline silicon（7）, U-shaped monocrystalline silicon（7）Surface have gate insulator（5）, adjacent U-shaped monocrystalline silicon（7）Between
By insulating medium layer（6）Isolation；Gate insulator（5）Has gate electrode in surface（4）, gate electrode（4）Top is H-shaped auxiliary control grid
Electrode（3）, H-shaped auxiliary control gate electrode（3）With gate electrode（4）Between be provided with insulating medium layer（6）, and by insulating medium layer（6）
With gate electrode（4）It is dielectrically separated from, U-shaped monocrystalline silicon（7）Upper surface be deposited with insulating medium layer（6）, and carved by etching technics
Eating away U-shaped monocrystalline silicon（7）The insulating medium layer of two ends upper surface（6）, and injection metal is generated respectively in the through hole for etching away
It is source electrode（1）And drain electrode（2）.
2. high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe according to claim 1, it is special
Levy and be：H-shaped auxiliary control gate electrode（3）And gate electrode（4）The two electrodes are the electrode of control independent of one another, and the two is by insulation
Dielectric layer（6）Realize insulated from each other, wherein H-shaped auxiliary control gate electrode（3）To U-shaped monocrystalline silicon（7）Two upper ends of vertical component
Three faces are formed around and gate electrode（4）Then it is located at H-shaped auxiliary control gate electrode（3）Lower section.
3. high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe according to claim 1, it is special
Levy and be：U-shaped monocrystalline silicon（7）As the raceway groove part of device, 10 are less than by doping concentration17cm-3High mobility monocrystalline silicon material
Material is formed.
4. high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe according to claim 1, it is special
Levy and be：Gate insulator（7）It is insulating materials dielectric layer or silicon dioxide layer with high-k.
5. high integration H-shaped source and drain grid auxiliary control U-shaped raceway groove high mobility nodeless mesh body pipe according to claim 1, it is special
Levy and be：U-shaped monocrystalline silicon（7）Except both sides and insulating medium layer（6）Has gate insulator in the position outside surface being in contact
（5）；Gate insulator（5）Except both sides and insulating medium layer（6）Has gate electrode in the position outside surface being in contact（4）.
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| CN201310597980.3A CN104282737B (en) | 2013-11-20 | 2013-11-20 | High-integration-level H-shaped source, drain and gate auxiliary control U-shaped channel high-mobility-ratio junction-free transistor |
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| CN201310597980.3A CN104282737B (en) | 2013-11-20 | 2013-11-20 | High-integration-level H-shaped source, drain and gate auxiliary control U-shaped channel high-mobility-ratio junction-free transistor |
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| CN104282737B true CN104282737B (en) | 2017-05-24 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208437A (en) * | 2010-03-30 | 2011-10-05 | 南亚科技股份有限公司 | Semiconductor device and method of making the same |
| TW201222785A (en) * | 2010-11-19 | 2012-06-01 | Univ Nat Chiao Tung | A structure and process of basic complementary logic gate made by junctionless transistors |
| CN102779851A (en) * | 2012-07-06 | 2012-11-14 | 北京大学深圳研究生院 | Transistor free of junction field effect |
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| US8803233B2 (en) * | 2011-09-23 | 2014-08-12 | International Business Machines Corporation | Junctionless transistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102208437A (en) * | 2010-03-30 | 2011-10-05 | 南亚科技股份有限公司 | Semiconductor device and method of making the same |
| TW201222785A (en) * | 2010-11-19 | 2012-06-01 | Univ Nat Chiao Tung | A structure and process of basic complementary logic gate made by junctionless transistors |
| CN102779851A (en) * | 2012-07-06 | 2012-11-14 | 北京大学深圳研究生院 | Transistor free of junction field effect |
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