CN104253061A - Method for detecting surface abnormalities of source polycrystalline silicon after chemical mechanical grinding - Google Patents
Method for detecting surface abnormalities of source polycrystalline silicon after chemical mechanical grinding Download PDFInfo
- Publication number
- CN104253061A CN104253061A CN201310266284.4A CN201310266284A CN104253061A CN 104253061 A CN104253061 A CN 104253061A CN 201310266284 A CN201310266284 A CN 201310266284A CN 104253061 A CN104253061 A CN 104253061A
- Authority
- CN
- China
- Prior art keywords
- source polysilicon
- polycrystalline silicon
- source
- electronic scanner
- scanner microscope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Disclosed is a method for detecting surface abnormalities of source polycrystalline silicon after chemical mechanical grinding. The method includes detecting the surface of the source polycrystalline silicon by a KT electronic scanning microscope after chemical mechanical grinding, continuously emitting protogenesis incident electrons to scan the surface of the source polycrystalline silicon by the KT electronic scanning microscope, exciting valence electrons of the surface of the polycrystalline silicon to obtain secondary electrons, and monitoring the secondary electrons excited on the surface of the source polycrystalline silicon by the KT electronic scanning microscope and imaging, wherein imaging luminance of the abnormal surface is higher than that of the normal surface. The method is capable of simply and effectively detecting surface abnormalities of the source polycrystalline silicon, and possibility of wafer damages is reduced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to and a kind ofly detect the method for source polysilicon through cmp rear surface exception.
Background technology
In semiconductor fabrication process, after carrying out CMP cmp to source polysilicon, need to detect source polysilicon surface, after confirming that surface is without exception, then carry out next step source polysilicon and return etching processing procedure.If directly carry out successive process to the source polysilicon with surface abnormalities, source etch line width standard difference can be caused to exceed controlled range, wafer is easily damaged, even needs to reform, add cost, reduce efficiency.
A kind of measurement equipment measuring live width that current use Hitachi Hitachi produces, Hitachi by name electronic scanner microscope detects the source polysilicon surface of having carried out after CMP cmp, first Hitachi's electronic scanner microscope is to needing the region measured to take pictures, then measuring for photo.Fig. 1 adopts Hitachi's electronic scanner microscope to the photo of the abnormal surf zone shooting of source polysilicon, and do not have difference with the shooting results of normal surface, in Fig. 1, zone line is source polysilicon, the intensity of waveforms stands secondary electron in figure.Normal surface has obvious difference with extremely surperficial to adopt Hitachi's electronic scanner microscope not see, and in measurement process, there is no the electronic scanning of certain time, be therefore difficult to accurately to tell source polysilicon surface and whether there is exception, cause testing result unreliable.
Therefore, a kind of equipment and the method that can detect source electrode polysilicon surface exception is simply and effectively badly in need of.
Summary of the invention
The invention provides and a kind ofly detect the method for source polysilicon through cmp rear surface exception, the surface abnormalities of source polysilicon can be detected simply and effectively, reduce the possibility of wafer damaging repercussions.
In order to achieve the above object, the invention provides and a kind ofly detect the method for source polysilicon through cmp rear surface exception, adopt KT electronic scanner microscope to detect the surface of source polysilicon after cmp, the method includes the steps of:
Step 1, KT electronic scanner microscope are launched primary incident electron and are scanned source polysilicon surface, and the valence electron on source polysilicon surface is excited, and form secondary electron;
KT electronic scanner microscope continues to scan source polysilicon surface, and the duration is 3-5S;
Step 2, the KT electronic scanner microscope detecting source polysilicon secondary electron that is inspired of surface imaging, judge whether to there is surface abnormalities.
Abnormal surperficial brightness of image is greater than the brightness of image of normal surface.
The present invention can detect the surface abnormalities of source polysilicon simply and effectively, reduces the possibility of wafer damaging repercussions.
Accompanying drawing explanation
Fig. 1 is the photo adopting Hitachi's electronic scanner microscope to take source polysilicon surf zone in background technology.
Fig. 2 is schematic diagram of the present invention.
Fig. 3 is the abnormal surperficial photo of source polysilicon that the present invention takes.
Fig. 4 is the photo of the source polysilicon normal surface that the present invention takes.
Embodiment
Following according to Fig. 2 ~ Fig. 4, illustrate preferred embodiment of the present invention.
The present invention adopts KT electronic scanner microscope to detect the surface of source polysilicon after cmp.
KT is the abbreviation of trade name, and full name is KLA-Tencor(KLA-Tencor semiconductor), KT electronic scanner microscope is a kind of measurement equipment measuring live width.
As shown in Figure 2, this detection source polysilicon comprises following steps through the method for cmp rear surface exception:
Step 1, KT electronic scanner microscope are launched primary incident electron and are scanned source polysilicon surface (comprising atomic nucleus and valence electron), and the valence electron on source polysilicon surface is excited, and form secondary electron;
KT electronic scanner microscope continues to scan source polysilicon surface, and the duration is 3-5S;
Step 2, the KT electronic scanner microscope detecting source polysilicon secondary electron that is inspired of surface imaging, judge whether to there is surface abnormalities;
When detected thing source polysilicon surface has abnormal, its surface mass changes, so atomic nucleus and valence electron different from normal surface, the amount of the secondary electron that identical primary incident electron inspires also can be different, the amount of the abnormal surperficial secondary electron be inspired is greater than normal surface, and therefore abnormal surperficial brightness of image can be greater than the brightness of image of normal surface.
As shown in Figure 3, be the abnormal surperficial photo of the source polysilicon taken of the present invention, and the photo of Fig. 4 source polysilicon normal surface that to be the present invention take.As can be seen from photo, abnormal surperficial brightness is apparently higher than the brightness of normal surface.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (3)
1. detect the method for source polysilicon through cmp rear surface exception, it is characterized in that, adopt KT electronic scanner microscope to detect the surface of source polysilicon after cmp, the method includes the steps of:
Step 1, KT electronic scanner microscope are launched primary incident electron and are scanned source polysilicon surface, and the valence electron on source polysilicon surface is excited, and form secondary electron;
KT electronic scanner microscope continues to scan source polysilicon surface;
Step 2, the KT electronic scanner microscope detecting source polysilicon secondary electron that is inspired of surface imaging, judge whether to there is surface abnormalities.
2. the source polysilicon that detects as claimed in claim 1 is through the method for cmp rear surface exception, and it is characterized in that, KT electronic scanner microscope continues source polysilicon surface scan 3-5S.
3. the source polysilicon that detects as claimed in claim 1 is through the method for cmp rear surface exception, and it is characterized in that, abnormal surperficial brightness of image is greater than the brightness of image of normal surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310266284.4A CN104253061A (en) | 2013-06-28 | 2013-06-28 | Method for detecting surface abnormalities of source polycrystalline silicon after chemical mechanical grinding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310266284.4A CN104253061A (en) | 2013-06-28 | 2013-06-28 | Method for detecting surface abnormalities of source polycrystalline silicon after chemical mechanical grinding |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104253061A true CN104253061A (en) | 2014-12-31 |
Family
ID=52187848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310266284.4A Pending CN104253061A (en) | 2013-06-28 | 2013-06-28 | Method for detecting surface abnormalities of source polycrystalline silicon after chemical mechanical grinding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104253061A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1400644A (en) * | 2001-07-30 | 2003-03-05 | 旺宏电子股份有限公司 | Method for detecting etching result of contact window |
| CN1579003A (en) * | 2001-11-02 | 2005-02-09 | 株式会社荏原制作所 | Semiconductor manufacturing apparatus having a built-in inspection apparatus and a device manufacturing method using said manufacturing apparatus |
| US20070153264A1 (en) * | 2001-03-01 | 2007-07-05 | Akira Hamamatsu | Apparatus and method for inspecting defects |
-
2013
- 2013-06-28 CN CN201310266284.4A patent/CN104253061A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070153264A1 (en) * | 2001-03-01 | 2007-07-05 | Akira Hamamatsu | Apparatus and method for inspecting defects |
| CN1400644A (en) * | 2001-07-30 | 2003-03-05 | 旺宏电子股份有限公司 | Method for detecting etching result of contact window |
| CN1579003A (en) * | 2001-11-02 | 2005-02-09 | 株式会社荏原制作所 | Semiconductor manufacturing apparatus having a built-in inspection apparatus and a device manufacturing method using said manufacturing apparatus |
Non-Patent Citations (1)
| Title |
|---|
| 郭立伟等: "《现代材料分析测试方法》", 31 March 2008, 兵器工业出版社 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8934705B2 (en) | Persistent feature detection | |
| Boye et al. | E-beam inspection for combination use of defect detection and CD measurement | |
| US10192302B2 (en) | Combined patch and design-based defect detection | |
| JP6057522B2 (en) | Defect inspection method | |
| JP2012243975A (en) | Evaluation method and manufacturing method of silicon wafer | |
| KR102147772B1 (en) | Method of evaluating semiconductor substrate and method of manufacturing semiconductor substrate | |
| TW201036083A (en) | Inspection method and inspection apparatus for semiconductor substrate | |
| TW200527321A (en) | Defect inspection method | |
| CN104253061A (en) | Method for detecting surface abnormalities of source polycrystalline silicon after chemical mechanical grinding | |
| JP2009097928A (en) | Defect inspecting device and defect inspection method | |
| JP2010040793A (en) | Wafer for heat treat furnace evaluation, heat treatment furnace evaluation method, and semiconductor wafer manufacturing method | |
| CN102339772B (en) | Method for detecting defects of through holes | |
| US9935021B2 (en) | Method for evaluating a semiconductor wafer | |
| US9541824B1 (en) | Method and system for fast inspecting defects | |
| JP5653370B2 (en) | Method for inspecting cracks in solar cells | |
| JP6476617B2 (en) | Method for evaluating organic contamination on semiconductor substrate surface and use thereof | |
| KR20150005616A (en) | Apparatus and method for detecting position of wafer | |
| CN106024665B (en) | A kind of conditions of exposure detection method and system | |
| TW200709318A (en) | Method and system for inspecting the image on a wafer | |
| JP2011119528A (en) | Method for evaluating crystal defect of semiconductor single-crystal substrate | |
| JP5987976B2 (en) | Substrate detection system and substrate detection method | |
| Mitra et al. | Pre-Litho Back-Side Etch for Improved Flatness and Yield | |
| JP2019054132A (en) | Method for evaluating semiconductor wafer | |
| JP2004363223A (en) | Equipment, system, method, and program for defect inspection | |
| Hafer et al. | In-Line Detection of Deep Trench Moat Underetch Defects Using eBeam Inspection |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20141231 |
|
| RJ01 | Rejection of invention patent application after publication |