CN104253031B - 进行再沉积制程时改善掺杂多晶硅片电阻阻值差异的方法 - Google Patents
进行再沉积制程时改善掺杂多晶硅片电阻阻值差异的方法 Download PDFInfo
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Abstract
一种进行再沉积制程时改善掺杂多晶硅片电阻阻值差异的方法,在沉积制程中断后的多晶硅薄膜上通H2气流,再进行再沉积制程,直到完成多晶硅薄膜的沉积,然后依序进行后续制程。本发明能够缩小沉积制程和再沉积制程中形成的多晶硅薄膜的片电阻阻值差异,减少制程中断产生的不良影响,获得片电阻较为一致的多晶硅薄膜。
Description
技术领域
本发明涉及半导体制造领域,尤其涉及一种进行再沉积制程时降低掺杂多晶硅片电阻阻值的方法。
背景技术
在使用低压化学气相沉积设备来掺杂作为双极型互补金属氧化物半导体的射极器件的多晶硅时,片电阻Rs是这一制程中非常关键的参数。如果沉积设备的腔室发生了硬件出错报警,则沉积制程会被迫中断,当修复了硬件问题之后,再次进行多晶硅的沉积制程,但是在该再沉积制程中,多晶硅薄膜的片电阻Rs的阻值会发生变化,阻值会增大很多,举一个测试例,在正常沉积制程中,得到的片电阻Rs的阻值为365.5Ω(电流为2400A),中断沉积制程,在经过30分钟的暂停之后,进行再沉积,在进行再沉积制程中,得到的片电阻Rs的阻值为390.2Ω(电流为2400A),再沉积制程中的片电阻Rs的阻值大大超过了正常沉积制程中的片电阻Rs的阻值,如图1所示,在衬底101上沉积多晶硅102,由于制程被迫中断,沉积制程和再沉积制程中的片电阻Rs的阻值有较大差异,导致沉积制程和再沉积制程中形成的多晶硅之间存在较明显的分界线103,这会极大地影响到器件的性能。
发明内容
本发明提供的一种进行再沉积制程时改善掺杂多晶硅片电阻阻值差异的方法,能够缩小沉积制程和再沉积制程中形成的多晶硅薄膜的片电阻阻值差异,减少制程中断产生的不良影响,获得片电阻较为一致的多晶硅薄膜。
为了达到上述目的,本发明提供一种进行再沉积制程时改善掺杂多晶硅片电阻阻值差异的方法,该方法用于沉积制程遭到中断后,该方法包含以下步骤:
步骤1、判断沉积制程遭到中断,转到步骤2;
步骤2、在沉积制程中断后的多晶硅薄膜上通H2气流;
步骤3、进行再沉积制程,直到完成多晶硅薄膜的沉积,然后依序进行后续制程。
所述的步骤2中,H2气流为99%摩尔比氢气。
所述的步骤2中,通过流量控制器控制H2气流的流量。
所述的步骤2中,H2气流的流量为0~200立方厘米/分钟。
所述的步骤2中,H2气流的通气时间为10-15S。
本发明能够缩小沉积制程和再沉积制程中形成的多晶硅薄膜的片电阻阻值差异,减少制程中断产生的不良影响,获得片电阻较为一致的多晶硅薄膜。
附图说明
图1是背景技术中沉积制程中断后进行再沉积制程后形成的多晶硅薄膜的结构示意图。
图2是采用本发明的方法制成的多晶硅薄膜的结构示意图。
具体实施方式
以下根据图2具体说明本发明的较佳实施例。
本发明提供一种进行再沉积制程时改善掺杂多晶硅片电阻阻值差异的方法,该方法用于沉积制程遭到中断后,该方法包含以下步骤:
步骤1、判断沉积制程遭到中断,转到步骤2;
步骤2、在沉积制程中断后的多晶硅薄膜上通H2气流;
该H2气流为99%摩尔比氢气 ,通过MFC(流量控制器)控制流量为0~200立方厘米/分钟,通气时间为10-15S;
步骤3、进行再沉积制程,直到完成多晶硅薄膜的沉积,然后依序进行后续制程。
举一个测试例,在正常沉积制程中,得到的片电阻Rs的阻值为365.5Ω(电流为2400A),中断沉积制程,在经过30分钟的暂停之后,直接进行再沉积,在进行再沉积制程中,得到的片电阻Rs的阻值为390.2Ω(电流为2400A),相比于正常沉积制程的片电阻Rs,阻值增加了6.8%,利用本发明的方法,在沉积制程中断后的多晶硅薄膜上通99%摩尔比的H2气流,持续通10S时间后,进行再沉积,在进行再沉积制程中,得到的片电阻Rs的阻值下降为371.3Ω(电流为2400A),相比于正常沉积制程的片电阻Rs,阻值仅仅增加了1.8%,大大缩小了沉积制程和再沉积制程中形成的多晶硅薄膜的片电阻阻值差异,如图2所示,在衬底101上沉积得到的多晶硅102,内部较为均匀,看到不由于制程中断而形成的界限。
本发明缩小了沉积制程和再沉积制程中形成的多晶硅薄膜的片电阻阻值差异,减少了制程中断产生的不良影响,能够获得片电阻较为一致的多晶硅薄膜。
尽管本发明的内容已经通过上述优选实施例作了详细介绍,但应当认识到上述的描述不应被认为是对本发明的限制。在本领域技术人员阅读了上述内容后,对于本发明的多种修改和替代都将是显而易见的。因此,本发明的保护范围应由所附的权利要求来限定。
Claims (2)
1.一种进行再沉积制程时改善掺杂多晶硅片电阻阻值差异的方法,该方法用于沉积制程遭到中断后,其特征在于,该方法包含以下步骤:
步骤1、判断沉积制程遭到中断,转到步骤2;
步骤2、在沉积制程中断后的多晶硅薄膜上通H2气流;
步骤3、进行再沉积制程,直到完成多晶硅薄膜的沉积,然后依序进行后续制程;
所述的步骤2中,H2气流为99%摩尔比氢气;
所述的步骤2中,H2气流的流量为0~200立方厘米/分钟;
所述的步骤2中,H2气流的通气时间为10-15S。
2.如权利要求1所述的进行再沉积制程时改善掺杂多晶硅片电阻阻值差异的方法,其特征在于,所述的步骤2中,通过流量控制器控制H2气流的流量。
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CN101651094A (zh) * | 2008-08-15 | 2010-02-17 | 中芯国际集成电路制造(上海)有限公司 | 多晶硅薄膜及栅极的形成方法 |
CN101764155A (zh) * | 2009-11-18 | 2010-06-30 | 上海宏力半导体制造有限公司 | 沟槽式场效应管及其制备方法 |
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CN101764155A (zh) * | 2009-11-18 | 2010-06-30 | 上海宏力半导体制造有限公司 | 沟槽式场效应管及其制备方法 |
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