CN104240799A - ITO (indium tin oxide) transparent conductive film - Google Patents
ITO (indium tin oxide) transparent conductive film Download PDFInfo
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- CN104240799A CN104240799A CN201410508251.0A CN201410508251A CN104240799A CN 104240799 A CN104240799 A CN 104240799A CN 201410508251 A CN201410508251 A CN 201410508251A CN 104240799 A CN104240799 A CN 104240799A
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Abstract
The invention discloses an ITO (indium tin oxide) transparent conductive film. The ITO transparent conductive film sequentially comprises a PET (polyethylene terephthalate) base material, a first IM (intensity modulation) layer, a second IM layer and an ITO transparent conductive layer, wherein the first IM layer comprises a HC (hydrocarbon compound) hardening layer and a first matching layer; the HC hardening layer is coated on the PET base material; the first matching layer is positioned on the HC hardening layer; the refractive index of the first matching layer is greater than that of the HC hardening layer; the refractive index of the first matching layer is 1.46-1.49; the first matching layer and the HC hardening layer are a high-refractive-index matching layer and a low-refractive-index matching layer respectively; the second IM layer comprises a second matching layer and a third matching layer; the second matching layer and the third matching layer are positioned on the first IM layer; the refractive index of the second matching layer is greater than that of the first matching layer; the refractive index of the second matching layer is 2.2-2.4; the refractive index of the third matching layer is smaller than that of the second matching layer; the refractive index of the third matching layer is 1.46-1.49; and the second matching layer and the third matching layer are a high-refractive-index matching layer and a low-refractive-index matching layer respectively. By double-refractive-index matching and a novel compensation technology, the problem that ITO transparent conductive film products have obvious etching grains can be greatly solved.
Description
Technical field
The present invention relates to optical technical field, particularly relate to a kind of ITO nesa coating.
Background technology
Touch-screen is made up of backlight module, Touch Sensor (touch-control sensor) and glass cover-plate.Current, on market, the Touch Sensor structure of main flow is: G+2F, namely glass has two panels nesa coating, and two panels nesa coating forms by PET film sputtering IM layer and ITO layer; The ito surface of two panels nesa coating is all through over etching, thus form respectively x, y Matrix Pattern of ITO, electric capacity is formed between x, y matrix, when finger contact glass cover-plate, the electric capacity of meeting butt contact impacts, this affects signal is delivered to electronic equipment IC part by the wire on Touch Sensor, thus orients the position of touch point.
The optical property quality of Touch Sensor directly determines touch-screen to the visual experience of people quality.Have inside the touch-screen that user can see some mobile phones and reflect fine rule one by one, and reflection has very strong blueness, namely this reflected ray is obvious etching line with blue composing, and it is because the reflection of the nesa coating Matrix Pattern in Touch Sensor structure produces with the position reflection differences be etched away.
Reflection differences before and after nesa coating etching is also △ R, is the important parameter investigating a slice electrically conducting transparent film properties quality.If △ R is more close to 0, then the etching line of ito film is more invisible; Otherwise if △ R departs from more than 0, then the etching line of nesa coating is more obvious.
Explain that the position colourity generation colourity that the colourity that etching line reason is ITO matrix in PET film is etched away together and chromatogram difference cause by color.If represent the colourity of nesa coating with 1b*, 2b* represents the colourity of the rear non-ITO part film of etching, then 1b*-2b*=△ b*, △ b* is more more invisible close to the etching line of 0, ITO nesa coating; Otherwise if △ b* departs from more than 0, then the chromaticity difference of ITO nesa coating etching is more obvious.
And along with the rise of high-end large touch-screen equipment and the preposition self-luminous application of OLED technology, we require etching line and aberration all invisible, but the ITO nesa coating etching line making Touch Sensor is difficult to eliminate completely, cause the etching line of the equipment such as existing commercially some mobile phone obvious, this is some present technical problems.
Therefore, for above-mentioned technical problem, be necessary to provide a kind of new ITO nesa coating.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of ITO nesa coating, which obviate the obvious problem of ITO nesa coating product etching line.
To achieve these goals, the technical scheme that provides of the embodiment of the present invention is as follows:
A kind of ITO nesa coating, described ITO nesa coating comprises PET base material, an IM layer, the 2nd IM layer and ITO transparency conducting layer successively, wherein,
One IM layer comprises the HC hardened layer that is coated in described PET base material and is positioned at the first matching layer on described HC hardened layer, the refractive index of described first matching layer is greater than the refractive index of HC hardened layer, the refractive index of the first matching layer is 1.46 ~ 1.49, and described first matching layer and HC hardened layer form a pair height refractive index matching layers;
2nd IM layer comprises and is positioned at the second matching layer on an IM layer and the 3rd matching layer, the refractive index of described second matching layer is greater than the refractive index of the first matching layer, the refractive index of the second matching layer is 2.2 ~ 2.4, the refractive index of described 3rd matching layer is less than the refractive index of the second matching layer, the refractive index of the 3rd matching layer is 1.46 ~ 1.49, and described second matching layer and the 3rd matching layer form a pair height refractive index matching layers.
As a further improvement on the present invention, the material of described first matching layer and the 3rd matching layer is SiO
xor MgF
2, the material of the second matching layer is NbO
x.
As a further improvement on the present invention, the refractive index of described first matching layer and the 3rd matching layer is the refractive index of the 1.47, second matching layer is 2.3.
As a further improvement on the present invention, the thickness of described first matching layer is 8 ~ 15nm, and the thickness of the second matching layer is 8 ~ 10nm, and the thickness of the 3rd matching layer is 20 ~ 30nm.
As a further improvement on the present invention, the refractive index of described ITO transparency conducting layer is 2.0 ~ 2.2.
As a further improvement on the present invention, the refractive index of described ITO transparency conducting layer is 2.1.
As a further improvement on the present invention, the thickness of described ITO transparency conducting layer is 18 ~ 25nm.
The present invention has following beneficial effect:
The basis transferring to PET base material inside at IM is carried out sputtering to add secondary IM and compensate, this double reflective index coupling is D-IM technology with the brand new technical compensated.It is based on Optical Thin-film Optimum Design, by the technological parameter of adjustment PET plated film, can produce △ R and △ b* even equals 0 as far as possible ITO nesa coating close to 0.Etch the ITO nesa coating of this sputtering with coating double integration, etching line is invisible with reflection chromatogram.By double reflective index coupling and compensation new technology (i.e. D-IM technology), the obvious problem of ITO nesa coating product etching line greatly can be eliminated.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, the accompanying drawing that the following describes is only some embodiments recorded in the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
The structural representation that Fig. 1 is the ITO nesa coating that uses HC+PET to obtain in prior art 1;
The structural representation that Fig. 2 is the ITO nesa coating that uses HC+S-IM+PET to obtain in prior art 2;
The structural representation of the ITO nesa coating that Fig. 3 uses PET+D-IM+ITO to obtain for the present invention;
The optical curve figure that Fig. 4 is the ITO nesa coating that uses HC+S-IM+PET to obtain in prior art 2;
The optical curve figure that Fig. 5 is the ITO nesa coating that uses PET+D-IM+ITO to obtain in the embodiment of the invention;
Fig. 6 a is the reflectance curve comparison diagram in the present invention before and after ITO nesa coating etching; Fig. 6 b is the vector control figure of ITO nesa coating coating process in the present invention.
Embodiment
Describe the present invention below with reference to embodiment shown in the drawings.But these execution modes do not limit the present invention, the structure that those of ordinary skill in the art makes according to these execution modes, method or conversion functionally are all included in protection scope of the present invention.
In prior art, ITO process for transparent conductive film is: with take-up type vacuum magnetron sputtering coater for production equipment, select specific PET film as base material, pass through optical coating design, first specific sputtering of materials is formed multiple composite film to PET film surface, subsequently ITO is splashed on composite film material, thus forms the ITO nesa coating with electric conductivity.
In the production technology of nesa coating, " PET film base material " and " optical coating design " are the core technologies determining properties of product, the design of different PET film base material collocation different optical rete, thus create different technique.
At present, production ito film PET film base material used has HC (Hard Coating)+PET, HC+IM+PET two kinds, and the latter and the former difference are that PET film base material inside is present in an optical adjustment layer (IM layer).Be specially:
1, the ITO transparent conductive film structure using HC+PET to obtain is joined shown in Fig. 1, comprises successively from bottom to up: PET base material, NbO
xlayer, SiO
xlayer, ITO transparency conducting layer.SiO below ITO transparency conducting layer
xlayer and NbO
xlayer forms height index matching system (i.e. IM system);
2, the ITO transparent conductive film structure using HC+S-IM+PET to obtain is joined shown in Fig. 2, comprises successively from bottom to up: PET base material, SiO
xlayer, ITO transparency conducting layer, PET base material is coated with HC hardened layer.HC hardened layer and SiOx layer form a height index matching system.
As above, shown in technology 1, because the base material that this technology adopts is the PET not containing refractive index matching layers, therefore PET base material to be plated a NbO
xwith SiO
xrefractive index matching layers, the ito film that such guarantee finally obtains is invisible; In addition, the SiO contacted with PET base material
xlayer act as bonding PET and it above rete.The ITO nesa coating △ R using this technique to produce is 0.18%, △ b* is 0.4.
As above shown in technology 2, owing to having contained the IM matching layer of precoating in the PET base material that this technology adopts, therefore the SiO of direct plating low-refraction in PET base material
xlayer, makes itself and HC hardened layer (containing IM precoated shet) form a height index matching system.Ginseng Figure 4 shows that the optical curve figure of " HC+S-IM+PET " structure, wherein, B-A-A represent output overall with width thin-film back-end (Back, after in before point) crystallization after (After Annealing); After ITO being etched after B-E represents output overall with width thin-film back-end (Back, after in before point) first crystallization (Etch).The ITO nesa coating △ R using this technique to produce is-0.5%, △ b* is 1.6.
The invention provides a kind of based on PET+D-IM+ITO nesa coating, the abbreviation of D-IM and Double Index Matching, i.e. birefringence rate coupling and compensation.The prerequisite of this technology is that the PET base material that ITO nesa coating adopts contains IM applying structure.
The application mode of D-IM technology is: select the PET film being coated with IM layer as essential base material, complex condition optical film optimizing Design Software is adopted to support, using takeup type many target position vacuum magnetron sputtering film plating machine as production equipment, after the optimization of pet sheet face sputtering optical compound film layer, form PET+IM multi-layer film structure.Because the optical compound film layer wherein through optimizing constitutes two refractive index matching layers with the IM high refractive index layer that PET base material is coated with, so claim this structure to be D type refractive index matching layers (i.e. D-IM technology).Subsequently ITO nesa coating is splashed in PET material, thus forms this special construction of D-IM+ITO.
Shown in ginseng Fig. 3, in the present invention, ITO nesa coating comprises PET base material 10, first matching layer 20, second matching layer 30, the 3rd matching layer 40, ITO transparency conducting layer 50 from bottom to up successively, wherein:
PET base material 10 is coated with HC hardened layer (not shown), the PET base material used in the present invention, except having special index request to the optical adjustment layer of precoating, also requires that PET has the optical properties such as good anti-dazzle anti-rainbow.The gross thickness of PET base material can be 125um, 100um, 50um etc.
The refractive index of the first matching layer 20 is greater than the refractive index of HC hardened layer, and in the present invention, the material of the first matching layer 20 is SiO
x.The refractive index of this layer is designated as L, i.e. low-index layer, and refractive index n is 1.46 ~ 1.49, and thickness is 8 ~ 15nm, and the first matching layer 20 and HC hardened layer form a pair height refractive index matching layers, i.e. an IM layer.
Further, the first matching layer 20 is also simultaneously as bonding transition zone, and as first the SiOx layer of direct sputter in the PET base material being coated with HC hardened layer, this layer of material can also be used as outside bonding transition zone.
The refractive index of the second matching layer 30 is greater than the refractive index of the first matching layer 20, and in the present invention, the material of the second matching layer 30 is NbO
x.The refractive index of this layer is designated as H, i.e. high refractive index layer, and refractive index n is 2.2 ~ 2.4, and thickness is 8 ~ 10nm.
The refractive index of the 3rd matching layer 40 is less than the refractive index of the second matching layer 30, and in the present invention, the material of the 3rd matching layer 40 is SiO
x.The refractive index of this layer is designated as L, i.e. low-index layer, and refractive index n is 1.46 ~ 1.49, and thickness is 20 ~ 30nm, and the 3rd matching layer 40 and the second matching layer 30 form a pair height refractive index matching layers, i.e. the 2nd IM layer.
ITO transparency conducting layer 50, this layer of refractive index n is 2.0 ~ 2.2, and thickness is 18 ~ 25nm.
In said structure, HC hardened layer and SiOx form a height refractive index matching layers HL, NbOx and SiOx forms another one height refractive index matching layers HL, always have two height refractive index matching layers carry out mating and compensate, be designated as (HL) ^2, therefore final product structure is designated as PET+1IM+2IM+ITO, i.e. " PET+D-IM+ITO ".
Further, the material of the first matching layer and the 3rd matching layer also can use MgF
2replace SiO
x, its parameter such as structure, optics is substantially identical, no longer repeats at this.
Preferably, in the embodiment of the invention, the refractive index of the first matching layer 20 SiOx is 1.47, the refractive index of the second matching layer 30 NbOx is 2.3, the refractive index of the 3rd matching layer 40 SiOx is 1.47, the refractive index of ITO transparency conducting layer 50 is 2.1, ginseng Figure 5 shows that the optical curve figure of " PET+D-IM+ITO " structure in present embodiment, wherein, B-A-A represents that output overall with width thin-film back-end (Back, after in before point) is after crystallization (After Annealing); B-B-A represents that output overall with width thin-film back-end (Back, after in before point) is before crystallization (Before Annealing); After ITO being etched after B-E represents output overall with width thin-film back-end (Back, after in before point) first crystallization (Etch).Its primary test parameter is as follows: transmitance is 90%, △ R is-0.11%, △ b*=0.21-0.25=-0.04.
Compare △ R and the △ b* value of PET+S-IM+ITO and PET+D-IM+ITO, the ITO nesa coating △ R using PET+S-IM+ITO technique to produce is-0.5%, △ b* is 1.6.And the ITO nesa coating △ R using PET+D-IM+ITO technique to produce is-0.11%, △ b*=-0.04.Can obviously find out, △ R and the △ b* value of the latter are better than the former.
Further, below the optical compound film system Thoughts on Optimized Design of PET+D-IM+ITO structure in the present invention is described further.
Adopt special-purpose software to simulate, analog content is optical curve, plated film vector, product colour difference, as shown in Fig. 6 a, Fig. 6 b.
Simulation material structure is identical with the structure chart in above-mentioned specific embodiment.
Shown in two optical mode graphoids, Fig. 6 a is the reflectance curve comparison diagram before and after PET+D-IM+ITO etching, wherein abscissa is wavelength, ordinate is reflectivity, curve 1 is the reflectance curve after PET+D-IM+ITO crystallization, curve 2 is the curve through over etching back reflection rate, the difference of two curve reflectivity mean value y, and namely △ R is very little almost close to 0.00 value.
And the chromaticity 1b* after PET+D-IM+ITO crystallization representated by the curve 1 and PET+D-IM+ITO representated by curve 2 etch after chromaticity 2b* between aberration see shown in simulation drawing " previous chromaticity and current chromaticity ", namely aberration is now colour difference, and there is not chromaticity difference, therefore regard as △ b*=0.
Fig. 6 b is the vector control figure in coating process, and abscissa is thicknesses of layers, and ordinate is real-time reflectivity, the representative of final stage curve be the relation of reflectivity and thickness in PET sputter process.As can be seen from final stage curve, control ITO thickness, make that the reflectivity of 2 before and after ITO sputter is identical (to be changed a kind of saying to be: when ITO sputter is to a half thickness, the reflectivity of whole conducting film is just in time in minimum), so now before and after ito film etching, difference in reflection is very little, visible hardly, i.e. △ R=0.0.
Utilize D-IM technology, select the PET film being coated with IM layer as essential base material, adopt complex condition optical film optimizing Design Software to support, by the repeatedly optimal design to middle film layer, the thickness d that can realize ITO becomes larger, the effect that resistance value is lower.Thus ensure that the ITO nesa coating product simultaneously obtaining 100 Ω/ under optical etching indicator conditions, thus provide conducting membrane material for the touch-screen of G+1F structure.
In sum, the present invention transfers on the basis of PET base material inside at IM and carries out sputtering interpolation secondary IM compensation, and this double reflective index coupling is D-IM technology with the brand new technical compensated.It is based on Optical Thin-film Optimum Design, by the technological parameter of adjustment PET plated film, can produce △ R and △ b* even equals 0 as far as possible ITO nesa coating close to 0.Etch the ITO nesa coating of this sputtering with coating double integration, etching line is invisible with reflection chromatogram.By double reflective index coupling and compensation new technology (i.e. D-IM technology), the obvious problem of ITO nesa coating product etching line greatly can be eliminated.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.Any Reference numeral in claim should be considered as the claim involved by limiting.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, and the technical scheme in each embodiment also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
Claims (7)
1. an ITO nesa coating, is characterized in that, described ITO nesa coating comprises PET base material, an IM layer, the 2nd IM layer and ITO transparency conducting layer successively, wherein,
One IM layer comprises the HC hardened layer that is coated in described PET base material and is positioned at the first matching layer on described HC hardened layer, the refractive index of described first matching layer is greater than the refractive index of HC hardened layer, the refractive index of the first matching layer is 1.46 ~ 1.49, and described first matching layer and HC hardened layer form a pair height refractive index matching layers;
2nd IM layer comprises and is positioned at the second matching layer on an IM layer and the 3rd matching layer, the refractive index of described second matching layer is greater than the refractive index of the first matching layer, the refractive index of the second matching layer is 2.2 ~ 2.4, the refractive index of described 3rd matching layer is less than the refractive index of the second matching layer, the refractive index of the 3rd matching layer is 1.46 ~ 1.49, and described second matching layer and the 3rd matching layer form a pair height refractive index matching layers.
2. ITO nesa coating according to claim 1, is characterized in that, the material of described first matching layer and the 3rd matching layer is SiO
xor MgF
2; The material of the second matching layer is NbO
x.
3. ITO nesa coating according to claim 2, is characterized in that, the refractive index of described first matching layer and the 3rd matching layer is the refractive index of the 1.47, second matching layer is 2.3.
4. ITO nesa coating according to claim 2, is characterized in that, the thickness of described first matching layer is 8 ~ 15nm, and the thickness of the second matching layer is 8 ~ 10nm, and the thickness of the 3rd matching layer is 20 ~ 30nm.
5. ITO nesa coating according to claim 1, is characterized in that, the refractive index of described ITO transparency conducting layer is 2.0 ~ 2.2.
6. ITO nesa coating according to claim 5, is characterized in that, the refractive index of described ITO transparency conducting layer is 2.1.
7. ITO nesa coating according to claim 6, is characterized in that, the thickness of described ITO transparency conducting layer is 18 ~ 25nm.
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| CN201410508251.0A CN104240799A (en) | 2014-09-28 | 2014-09-28 | ITO (indium tin oxide) transparent conductive film |
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| CN104766647A (en) * | 2015-04-02 | 2015-07-08 | 江苏双星彩塑新材料股份有限公司 | ITO transparent conducting thin film |
| CN106601340A (en) * | 2016-12-21 | 2017-04-26 | 张家港康得新光电材料有限公司 | Refractive index coupling film and ITO conductive film |
| TWI582469B (en) * | 2014-10-21 | 2017-05-11 | 愛思開哈斯顯示用薄膜有限公司 | Transparent conductive optical sheet having high invisibility of pattern |
| CN107863181A (en) * | 2016-11-04 | 2018-03-30 | 江苏日久光电股份有限公司 | A kind of ITO conducting films |
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Inventor after: Yu Zhen Inventor after: Geng Jia Inventor after: Ding Xiaofeng Inventor after: Ke Rongfeng Inventor before: Yu Zhen Inventor before: Geng Jia Inventor before: Ding Xiaofeng Inventor before: Ke Rongfeng |
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