CN104218149B - The preparation method of Magnetic Sensor and Magnetic Sensor - Google Patents
The preparation method of Magnetic Sensor and Magnetic Sensor Download PDFInfo
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- CN104218149B CN104218149B CN201310214969.4A CN201310214969A CN104218149B CN 104218149 B CN104218149 B CN 104218149B CN 201310214969 A CN201310214969 A CN 201310214969A CN 104218149 B CN104218149 B CN 104218149B
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Abstract
The invention provides preparation method and the Magnetic Sensor of a kind of Magnetic Sensor.Described method comprises the steps: to provide substrate, and described substrate surface has at least one boss；Forming Z axis magnetic induction unit on the surface of boss and substrate, and form sensing unit on the surface of substrate, described Z axis magnetic induction unit includes magnetizing body and exit, described Z axis magnetic induction unit and sensing unit and includes magnetic material；Forming continuous print electrode layer at described substrate surface, described electrode layer also covers described boss；Graphical described electrode layer, to form working electrode at sensing cell surface, and the magnetization body surface on plateau sidewall forms Autonomous test electrode simultaneously.It is an advantage of the current invention that in the surface configuration magnetizing body Autonomous test electrode, may be used for directly testing magnetization body the most sensitive to Z axis magnetic field.
Description
Technical field
The invention belongs to electronic communication technology field, relate to a kind of Magnetic Sensor, particularly relate to preparation method and the Magnetic Sensor of a kind of Magnetic Sensor.
Background technology
Magnetic Sensor, according to its principle, can be divided into following a few class: Hall element, magnetodiode, anisotropic magnetoresistive element (AMR), tunnel knot magnetic resistance (TMR) element and giant magnetoresistance (GMR) element, induction coil, superconductive quantum interference gaussmeter etc..
Electronic compass is one of important applied field of Magnetic Sensor, and along with the fast development of consumer electronics in recent years, in addition to navigation system, the most increasing smart mobile phone and panel computer also begin to standard configuration electronic compass, brings the biggest application convenient to user.Magnetic Sensor of the prior art is typically planar magnetic sensor, can be used to magnetic field intensity and the direction measuring in plane.
In recent years, the demand of Magnetic Sensor starts from two axial three axle development.Magnetic field intensity and direction in plane such as can represent by X and Y-axis both direction, then three-axis sensor should also be able to measure and X-Y axle place plane vertical direction simultaneously, i.e. magnetic field intensity in Z-direction and direction.To simultaneously can measure the Magnetic Sensor of three axles, the most referred to as magnetic sensor.
In magnetic sensor field, the most each sensing unit is tested, especially the test to Z axis sensitivity level, become the technical problem that this area is urgently to be resolved hurrily.
Summary of the invention
The technical problem to be solved is to provide a kind of Magnetic Sensor, it is possible to tests the magnetization body of reflection Z axis changes of magnetic field, and further provides for its preparation method.
In order to solve the problems referred to above, the invention provides the preparation method of a kind of Magnetic Sensor, comprise the steps: to provide substrate, described substrate surface has at least one boss；Z axis magnetic induction unit is formed at the sidewall of boss and the surface of substrate, and sensing unit is formed on the surface of substrate, described Z axis magnetic induction unit includes that one extends to the exit of substrate surface, described Z axis magnetic induction unit and sensing unit with the magnetization body and of plateau sidewall laminating and includes magnetic material；Forming continuous print electrode layer at described substrate surface, described electrode layer also covers described boss；Graphical described electrode layer, to form working electrode at sensing cell surface, and the magnetization body surface on plateau sidewall forms Autonomous test electrode simultaneously.
Optionally, described substrate surface farther includes multiple boss, in the step of described graphical described electrode layer, forms the electrical connections of the different boss surface each detecting electrodes of connection further at substrate surface.
Optionally, before forming the step of Z axis magnetic induction unit and sensing unit, the step of the Surface Creation insulating barrier of described substrate and boss is further included at.
Optionally, described magnetic material is selected from any one in anisotropic magnetoresistance material, giant magnetic resistance and tunnel magnetoresistive material.
Optionally, when forming magnetic material, substrate applies a magnetic field simultaneously, in order to induce the direction of magnetization of magnetic material.
Optionally, the angle of described magnetization body and substrate surface is between 45 ° to 90 °.
Optionally, before forming continuous print electrode layer step, farther include following steps: form dielectric layer on the surface of described Z axis magnetic induction unit and sensing unit；Through hole, the working electrode contact making sensing unit with being subsequently formed is formed in the dielectric layer of sensing cell surface.
Optionally, after forming Z axis magnetic induction unit and sensing unit magnetic material, substrate applies a magnetic field and anneals, in order to promote the magnetic property of magnetic material.
Optionally, at a distance between sensing unit and exit, described distance is less than 5 microns.
Optionally, bonded to each other between sensing unit and exit.
Invention further provides a kind of Magnetic Sensor using said method to make, including: substrate；At least one boss of substrate surface；At the Z axis magnetic induction unit of plateau sidewall and substrate surface and the sensing unit on the surface of substrate, described Z axis magnetic induction unit includes that one extends to the exit of substrate surface, described Z axis magnetic induction unit and sensing unit with the magnetization body and of plateau sidewall laminating and includes magnetic material；Sensing cell surface has working electrode, and the magnetization body surface in groove has Autonomous test electrode further.
Optionally, described substrate surface farther includes multiple boss, farther includes to connect the electrical connections of different boss surface each detecting electrode in boss surface.
Optionally, include that on the surface of described substrate and boss an insulating barrier, described Z axis magnetic induction unit and sensing unit are disposed on the surface of described insulating barrier further.
Optionally, described magnetic material is selected from any one in anisotropic magnetoresistance material, giant magnetic resistance and tunnel magnetoresistive material.
Optionally, described magnetic material has an induced magnetization direction preset.
Optionally, the angle of described magnetization body and substrate surface is between 45 ° to 90 °.
Optionally, described Z axis magnetic induction unit and sensing unit surface there is dielectric layer, sensing unit above have through hole with working electrode contact.
Optionally, at a distance between sensing unit and exit, described distance is less than 5 microns.
Optionally, bonded to each other between sensing unit and exit.
It is an advantage of the current invention that in the surface configuration magnetizing body Autonomous test electrode, may be used for directly testing magnetization body the most sensitive to Z axis magnetic field.Time in Autonomous test electrode by the electric current that is perpendicular to page, electrode i.e. can form the field signal (be i.e. the Z axis field signal of a simulation) parallel with sidewall in the side-walls of boss, this field signal can be magnetized body output to sensing unit, thus read because the resistance variations of this magnetic field generation, this change correspond to the sensing in magnetic field.Because magnetic field produced by Autonomous test electrode is corresponding, such that realized Autonomous test and the rectification of Z axis sensor by this Autonomous test electrode with the intensity applying electric current and direction.In the application of Magnetic Sensor, the Autonomous test of corresponding flat (X and Y-axis) direction Magnetic Sensor is relatively easy, and the Autonomous test of corresponding Z axis is relatively difficult.The present invention provides a kind of function self-monitoring to Z axis Magnetic Sensor, and not additional process step, has obvious competitiveness.And this Autonomous test electrode concurrently forms in same step with working electrode, the most do not increase the complexity of processing technology, this Autonomous test electrode is the most only provided in magnetizing body surface, do not change shape and the position of magnetization body, do not interfere with the various characteristics that Magnetic Sensor is intrinsic the most yet.
Accompanying drawing explanation
It it is the enforcement step schematic diagram of the method for the invention detailed description of the invention shown in accompanying drawing 1.
Accompanying drawing 2A is to the process schematic representation shown in accompanying drawing 7 being the method for the invention detailed description of the invention.
Detailed description of the invention
The preparation method of Magnetic Sensor and the detailed description of the invention of Magnetic Sensor that there is provided the present invention below in conjunction with the accompanying drawings elaborate.
It is the enforcement step schematic diagram of the method for the invention detailed description of the invention shown in accompanying drawing 1, including: step S10, it is provided that substrate, described substrate surface has at least one boss；Step S11, at the Surface Creation insulating barrier of described substrate and boss；Step S12, Z axis magnetic induction unit is formed on the surface of plateau sidewall and substrate, and sensing unit is formed on the surface of substrate, described Z axis magnetic induction unit includes that one extends to the exit of substrate surface, described Z axis magnetic induction unit and sensing unit with the magnetization body and of plateau sidewall laminating and includes magnetic material；Step S13, forms continuous print electrode layer at described substrate surface, and described electrode layer also covers described boss；Step S14, graphical described electrode layer, to form working electrode at sensing cell surface, and the magnetization body surface on plateau sidewall forms Autonomous test electrode simultaneously.
Shown in accompanying drawing 2A and 2B, with reference to step S10, it is provided that substrate 20, described substrate 20 surface has at least one boss 21.Accompanying drawing 2A is the front view of substrate 20, and accompanying drawing 2B is the accompanying drawing 2A profile along AA direction.About the number of boss 21, this detailed description of the invention represents with three boss, in other detailed description of the invention, certainly can also include more or less boss, and its arrangement mode can also be adjusted as required.The cross sectional shape of described boss 21 can be rectangle or trapezoidal.
Shown in accompanying drawing 3, with reference to step S11, at described substrate 20 and the Surface Creation insulating barrier 32 of boss 21.This step is optional step, for the monocrystal silicon that material is conductive material, such as N-type or p-type of substrate 20 and boss 21, it should implement this step to realize electric isolation；If substrate 20 and boss 21 itself have been insulant, this step can be omitted.Insulating barrier 32 also has the effect of inculating crystal layer, is conducive to promoting the performance of subsequent deposition magnetic material.
Shown in accompanying drawing 4; with reference to step S12; Z axis magnetic induction unit 43 is formed on the surface of boss 21 sidewall and substrate 20; and sensing unit 44 is formed on the surface of substrate; described Z axis magnetic induction unit 43 includes that one extends to the exit 43b on substrate 20 surface with the magnetization body 43a and of boss 31 sidewall laminating; described Z axis magnetic induction unit 43 and sensing unit 44 include magnetic material, it is possible to comprise the protective layer of magnetic material further to protect magnetic material in subsequent technique.Between sensing unit 44 and exit 43b at a distance, spaced apart be less than 5 microns between sensing unit 44 and exit 43b, sensing unit 44 can fit together with exit 43b.Can form one or more Z axis magnetic induction unit 43 on the surface of same boss 21, this detailed description of the invention is only with an illustration.In other detailed description of the invention, the number of Z axis magnetic induction unit 43 can also be multiple, and multiple Z axis magnetic induction unit 43 is arranged on the sidewall surfaces of homonymy of boss 21.This step can use semiconductor technology to realize further; first the continuous cover layer that continuous print comprises magnetic material and protective layer is formed on the surface of substrate 20 and boss 21; use the technique such as photoetching and etching that continuous print cover layer is graphical again, form Z axis magnetic induction unit 43 and sensing unit 44.In above-mentioned steps, when forming magnetic material thin film, a magnetic field can be applied on a substrate 20 the most simultaneously, in order to induce magnetic material to make it have the direction of magnetization preset, and make magnetic material have preferable performance.Above-mentioned step can also include the process of annealing after implementing: anneals in the magnetic field applying a fixed-direction on a substrate 20, improves the performance of magnetic material.
The direction of so-called Z axis refers to and substrate 20 place plane vertical direction, and in the case of Z axis has magnetic field, the direction of magnetization of magnetization body 43a changes, and makes the direction of magnetization of exit 43b change.Sense between unit 44 and exit 43b at a distance, in the case of the direction of magnetization of exit 43b changes, unit 44 is sensed also causes the direction of magnetization to change for sensing, so can be measured to the plane at substrate 20 place by the introduction by magnetic field of Z axis.With sensing unit 44, spacing distance between sensing unit 44 and exit 43b can sense that the changes of magnetic field of exit 43b is as standard.Knowable to above-mentioned test philosophy, magnetization body 43a magnetic field most beneficial for collection Z-direction vertical with substrate 20 surface, but it means that the sidewall of boss 21 is also vertical, and vertical sidewall is not easy to be formed on its surface cover layer.Therefore the sidewall of boss 21 can slightly be beneficial to form cover layer in inclination angle, the angular range on described magnetization body 43a and substrate 30 surface is advisable between 45 ° to 90 °.
Further, when the plane of the introduction by magnetic field of Z axis to substrate 20 place is measured, if also have magnetic field in-Y plane simultaneously, then sensing unit 44 is perpendicular to sense the magnetic field of cell orientation simultaneously in being also possible to detection level face, during for detection Z-direction, the magnetic field of this horizontal direction is disturbed exactly.A kind of preferably by forming the magnetic sensor arrangement shown in four these detailed description of the invention in X-Y plane and forming the method for symmetrical electric bridge and offset, so-called symmetrical electric bridge refers to that two brachium pontis of homonymy present same trend change along with the changes of magnetic field in X-Y plane, thus balance out the voltage of the outfan sensitivity to the magnetic field in X-Y plane, so that what Z axis detector unit detected is Z axis signal purely.
Described magnetic material selected from any one in anisotropic magnetic resistance (AMR) material, giant magnetoresistance (GMR) material and tunnel magnetoresistive (TMR) material, such as, can be NiFe material etc..
Protective layer material can be Ta, TaN or TiN material, its objective is to protect flux material layer so that it is the change of magnetic property will not occur during technique and application, also functions to connect flux material layer and the purpose of subsequent electrode layer simultaneously.
Shown in accompanying drawing 5, with reference to step S13, forming continuous print electrode layer 55 at described substrate surface, described electrode layer 55 also covers the surface into described boss 21.The technique forming electrode layer 55 can be such as depositing operation etc., and the material of electrode layer 55 is monolayer or multilayer material, such as, can be Al, AlCu, AlSi etc., or is the multiple structures such as Ti/TiN/AlCu/TiN/Ti, AlCu/TiN.
Before depositing electrode layer 55, can be in Z axis magnetic induction unit 43 and the surface metallization medium layer (not shown) of sensing unit 44, in order to preferably to protect magnetic sensing element, it is to avoid it is damaged during technique, aoxidize, affect.After metallization medium layer, in addition it is also necessary to open corresponding through hole above sensing unit 44, thus realize the electric communication of test cell and electrode.
Shown in accompanying drawing 6, with reference to step S14, graphical described electrode layer 55, to form working electrode 66 on sensing unit 44 surface, and the magnetization body surface on plateau sidewall forms Autonomous test electrode 67 simultaneously.This step can use semiconductor planar technique to realize further, i.e. uses the technique such as photoetching and etching by graphical for electrode layer 55, forms working electrode 66.Working electrode 66 is for coordinating with sensing unit 44, realize the detection after Z axis magnetic field imports substrate 20 place plane, and Autonomous test electrode 67 may be used for magnetizing body 43a and applies the magnetic field in Z-direction, the most sensitive to Z axis magnetic field to test it, to complete the rectification to Z axis sensor.
Autonomous test electrode 67 is laid in the side of boss 21, it is close to magnetize on body 43a or dielectric layer, time in Autonomous test electrode 67 by the electric current that is perpendicular to accompanying drawing 6 page, Autonomous test electrode 67 i.e. can form the field signal (be i.e. the Z axis field signal of a simulation) parallel with sidewall in the sidewall surfaces of boss 21, this field signal can be magnetized body 43a output to sensing unit 44, thus read because the resistance variations of this magnetic field generation, this change correspond to the sensing in magnetic field.Because magnetic field produced by Autonomous test electrode 67 is corresponding, such that realized Autonomous test and the rectification of Z axis sensor by this Autonomous test electrode with the intensity applying electric current and direction.In the application of Magnetic Sensor, the Autonomous test of corresponding flat (X and Y-axis) direction Magnetic Sensor is relatively easy, and the Autonomous test of corresponding Z axis is relatively difficult.The present invention provides a kind of function self-monitoring to Z axis Magnetic Sensor, and not additional process step, has obvious competitiveness.
It it is the front view of substrate 20 after above-mentioned steps is implemented shown in accompanying drawing 7.This detailed description of the invention is as a example by three boss 21, use the Magnetic Sensor that said method is obtained, including substrate 20, the boss 21 on substrate 20 surface, the Z axis magnetic induction unit 43 on boss 21 sidewall and substrate 20 surface, sensing unit 44, the working electrode 66 on sensing unit 44 surface and the Autonomous test electrode 67 on Z axis magnetic induction unit 43 surface on the surface of substrate 20.Described Z axis magnetic induction unit 43 includes that one exposes the exit 43b on substrate 20 surface with the magnetization body 43a and of boss 21 sidewall laminating, described Z axis magnetic induction unit 43 and sense unit 44 and include magnetic material.Between sensing unit 44 and exit 43b at a distance, spaced apart be less than 5 microns between sensing unit 44 and exit 43b, sensing unit 44 can fit together with exit 43b.Can form one or more Z axis magnetic induction unit 43 on the surface of same boss 21, this detailed description of the invention is only with an illustration.In other detailed description of the invention, the number of Z axis magnetic induction unit 43 can also be multiple, and multiple Z axis magnetic induction unit 43 is arranged on the sidewall surfaces of homonymy of boss 21.The electrical connections further with different boss 21 surfaces of connection each detecting electrode 67 at substrate 20.Working electrode 66 is for coordinating with sensing unit 44, it is achieved Z axis magnetic field imports the detection after the plane of substrate 20 place, and Autonomous test electrode 67 may be used for producing a Z axis magnetic field, the most sensitive to Z axis magnetic field in order to directly test magnetization body 43a.The electric current being passed through vertical page in Autonomous test electrode 67 can produce a magnetic field in Z-direction, and this magnetic field can cause the direction of magnetization of magnetization body 43a to change, thus whether measures magnetization body 43a qualitatively to Z axis magnetic-field-sensitive.
The above is only the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (19)
1. The preparation method of a kind of Magnetic Sensor, it is characterised in that comprise the steps:
Thering is provided substrate, described substrate surface has at least one boss；
Z axis magnetic induction unit is formed at the sidewall of boss and the surface of substrate, and sensing unit is formed on the surface of substrate, described Z axis magnetic induction unit includes that one extends to the exit of substrate surface, described Z axis magnetic induction unit and sensing unit with the magnetization body and of plateau sidewall laminating and includes magnetic material；
Forming continuous print electrode layer at described substrate surface, described electrode layer also covers described boss；
Graphical described electrode layer, to form working electrode at sensing cell surface, and the magnetization body surface on plateau sidewall forms Autonomous test electrode simultaneously.
2. The preparation method of Magnetic Sensor according to claim 1, it is characterized in that, described substrate surface farther includes multiple boss, in the step of described graphical described electrode layer, forms the electrical connections of the different boss surface each detecting electrodes of connection further at substrate surface.
3. The preparation method of Magnetic Sensor according to claim 1, it is characterised in that before forming the step of Z axis magnetic induction unit and sensing unit, further include at the step of the Surface Creation insulating barrier of described substrate and boss.
4. The preparation method of Magnetic Sensor according to claim 1, it is characterised in that described magnetic material is selected from any one in anisotropic magnetoresistance material, giant magnetic resistance and tunnel magnetoresistive material.
5. The preparation method of Magnetic Sensor according to claim 1, it is characterised in that when forming magnetic material, simultaneously apply a magnetic field on substrate, in order to induce the direction of magnetization of magnetic material.
6. The preparation method of Magnetic Sensor according to claim 1, it is characterised in that after forming Z axis magnetic induction unit and sensing unit, apply a magnetic field on substrate and anneal, in order to promote the magnetic property of magnetic material.
7. The preparation method of Magnetic Sensor according to claim 1, it is characterised in that the angle of described magnetization body and substrate surface is between 45 ° to 90 °.
8. The preparation method of Magnetic Sensor according to claim 1, it is characterised in that at a distance between sensing unit and exit, described distance is less than 5 microns.
9. The preparation method of Magnetic Sensor according to claim 1, it is characterised in that bonded to each other between sensing unit and exit.
The preparation method of Magnetic Sensor the most according to claim 1, it is characterised in that formed before continuous print electrode layer step, farther includes following steps:
Dielectric layer is formed on the surface of described Z axis magnetic induction unit and sensing unit；
Through hole, the working electrode contact making sensing unit with being subsequently formed is formed in the dielectric layer of sensing cell surface.
11. 1 kinds use the Magnetic Sensor that method described in claim 1 makes, including:
Substrate；
At least one boss of substrate surface；
At the Z axis magnetic induction unit of plateau sidewall and substrate surface and the sensing unit on the surface of substrate, described Z axis magnetic induction unit includes that one extends to the exit of substrate surface, described Z axis magnetic induction unit and sensing unit with the magnetization body and of plateau sidewall laminating and includes magnetic material；
Sensing cell surface has working electrode, it is characterised in that
Magnetization body surface in groove has Autonomous test electrode further.
12. Magnetic Sensors according to claim 11, it is characterised in that described substrate surface farther includes multiple boss, farther include to connect the electrical connections of different boss surface each detecting electrode in boss surface.
13. Magnetic Sensors according to claim 11, it is characterised in that include that on the surface of described substrate and boss an insulating barrier, described Z axis magnetic induction unit and sensing unit are disposed on the surface of described insulating barrier further.
14. Magnetic Sensors according to claim 11, it is characterised in that described magnetic material is selected from any one in anisotropic magnetoresistance material, giant magnetic resistance and tunnel magnetoresistive material.
15. Magnetic Sensors according to claim 11, it is characterised in that described magnetic material has an induced magnetization direction preset.
16. Magnetic Sensors according to claim 11, it is characterised in that the angle of described magnetization body and substrate surface is between 45 ° to 90 °.
17. Magnetic Sensors according to claim 11, it is characterised in that described Z axis magnetic induction unit and sensing unit surface there is dielectric layer, sensing unit above have through hole with working electrode contact.
18. Magnetic Sensors according to claim 11, it is characterised in that at a distance between sensing unit and exit, described distance is less than 5 microns.
19. Magnetic Sensors according to claim 11, it is characterised in that bonded to each other between sensing unit and exit.
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