CN104217912B - 用于使用聚焦离子束进行半导体器件的平面剥层的前体 - Google Patents

用于使用聚焦离子束进行半导体器件的平面剥层的前体 Download PDF

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CN104217912B
CN104217912B CN201410227896.7A CN201410227896A CN104217912B CN 104217912 B CN104217912 B CN 104217912B CN 201410227896 A CN201410227896 A CN 201410227896A CN 104217912 B CN104217912 B CN 104217912B
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ion beam
focused ion
dielectric
acetate
copper
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CN104217912A (zh
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C.鲁
C.D.钱德勒
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FEI Co
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FEI Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/3233—Discharge generated by other radiation using charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/067—Manufacture or treatment of conductive parts of the interconnections by modifying the pattern of conductive parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3151—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31742—Etching microareas for repairing masks
    • H01J2237/31744—Etching microareas for repairing masks introducing gas in vicinity of workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Inorganic Chemistry (AREA)
CN201410227896.7A 2013-05-28 2014-05-27 用于使用聚焦离子束进行半导体器件的平面剥层的前体 Active CN104217912B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201361828128P 2013-05-28 2013-05-28
US61/828128 2013-05-28
US13/910,761 US9064811B2 (en) 2013-05-28 2013-06-05 Precursor for planar deprocessing of semiconductor devices using a focused ion beam
US13/910761 2013-06-05

Publications (2)

Publication Number Publication Date
CN104217912A CN104217912A (zh) 2014-12-17
CN104217912B true CN104217912B (zh) 2018-02-06

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Country Link
US (2) US9064811B2 (https=)
EP (1) EP2808885B1 (https=)
JP (1) JP6393446B2 (https=)
CN (1) CN104217912B (https=)

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US9123506B2 (en) 2013-06-10 2015-09-01 Fei Company Electron beam-induced etching
US9978586B2 (en) * 2015-11-06 2018-05-22 Fei Company Method of material deposition
US10103008B2 (en) * 2016-01-12 2018-10-16 Fei Company Charged particle beam-induced etching
US10347463B2 (en) * 2016-12-09 2019-07-09 Fei Company Enhanced charged particle beam processes for carbon removal
EP3607578B1 (en) * 2017-04-04 2023-07-19 TESCAN Brno, s.r.o. A method of etching one or more of mixed metal and dielectric layer of a semiconductor device
US10546719B2 (en) * 2017-06-02 2020-01-28 Fei Company Face-on, gas-assisted etching for plan-view lamellae preparation
CZ310048B6 (cs) * 2017-07-25 2024-06-19 Tescan Group, A.S. Způsob odstranění hmoty
FR3079963A1 (fr) * 2018-04-04 2019-10-11 Tescan Brno, S.R.O. Procede de gravure d'une ou de plusieurs couches mixtes de metal et de dielectrique d'un dispositif semi-conducteur
ES2738911A1 (es) * 2018-07-25 2020-01-27 Consejo Superior Investigacion Procedimiento para depositar elementos sobre un sustrato de interes y dispositivo
US10811219B2 (en) 2018-08-07 2020-10-20 Applied Materials Israel Ltd. Method for evaluating a region of an object
CN109148315B (zh) * 2018-08-27 2020-11-10 苏州芯联成软件有限公司 一种芯片内两金属层间通孔连接的辨别方法
CA3120208A1 (en) * 2018-11-21 2020-05-28 Techinsights Inc. Ion beam delayering system and method, topographically enhanced delayered sample produced thereby, and imaging methods and systems related thereto
KR102613856B1 (ko) * 2019-06-21 2023-12-14 에프이아이 컴파니 둘레 트렌치 형성 및 윤곽 에칭 층 제거
US11636997B2 (en) * 2020-07-01 2023-04-25 Applied Materials Israel Ltd. Uniform milling of adjacent materials using parallel scanning fib
CZ310675B6 (cs) 2023-02-19 2026-04-22 Tescan Group, A.S. Zařízení s fokusovaným svazkem nabitých částic a způsob opracování či zobrazování vzorků
US20250201707A1 (en) * 2023-12-13 2025-06-19 Intel Corporation Skeleton etch for semiconductor chips

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US5851413A (en) 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing
US6268608B1 (en) 1998-10-09 2001-07-31 Fei Company Method and apparatus for selective in-situ etching of inter dielectric layers
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US6514866B2 (en) * 2001-01-12 2003-02-04 North Carolina State University Chemically enhanced focused ion beam micro-machining of copper
US7008803B2 (en) * 2002-10-24 2006-03-07 International Business Machines Corporation Method of reworking structures incorporating low-k dielectric materials
US6863787B2 (en) * 2003-04-02 2005-03-08 Fei Company Dummy copper deprocessing
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Also Published As

Publication number Publication date
JP2014232876A (ja) 2014-12-11
US20150294885A1 (en) 2015-10-15
US9761467B2 (en) 2017-09-12
US9064811B2 (en) 2015-06-23
US20140357088A1 (en) 2014-12-04
CN104217912A (zh) 2014-12-17
EP2808885B1 (en) 2018-09-12
EP2808885A1 (en) 2014-12-03
JP6393446B2 (ja) 2018-09-19

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