CN104201235B - A kind of plasma texture method of thin-film solar cells AZO film - Google Patents
A kind of plasma texture method of thin-film solar cells AZO film Download PDFInfo
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- CN104201235B CN104201235B CN201410339032.4A CN201410339032A CN104201235B CN 104201235 B CN104201235 B CN 104201235B CN 201410339032 A CN201410339032 A CN 201410339032A CN 104201235 B CN104201235 B CN 104201235B
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- 239000010408 film Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 238000005530 etching Methods 0.000 claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 44
- 239000011521 glass Substances 0.000 claims description 35
- 229910052757 nitrogen Inorganic materials 0.000 claims description 22
- 239000001257 hydrogen Substances 0.000 claims description 20
- 229910052739 hydrogen Inorganic materials 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- 150000002431 hydrogen Chemical class 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 5
- 229910021641 deionized water Inorganic materials 0.000 claims description 5
- 238000011010 flushing procedure Methods 0.000 claims description 3
- 238000004080 punching Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000001039 wet etching Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 238000004062 sedimentation Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000010307 cell transformation Effects 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- -1 electronics Chemical class 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to semiconductor industry, more particularly to a kind of plasma texture method of thin-film solar cells AZO film.With method for etching plasma physical etching and chemically etching and its etching degree high Modulatory character the advantages of etch thin-film solar cells AZO film.This method can reach the effect of wet etching, simultaneously as not using corrosive solution, it is to avoid reaction solution deals with pollution on the environment improperly；By to the heating-up temperature of substrate frame in this method, be passed through the control of gas flow, RF source power and frequency, etch period, improve the controllability of etching.Contrast sputtering sedimentation matte AZO films, because of the limited texturing DeGrain of particle energy, can reach excellent etching effect.Realize that a kind of light trapping structure excellent effect, etching process controllability be high, the texture method of free of contamination thin-film solar cells AZO film, so as to be used to improve in the technology of solar cell transformation efficiency.
Description
Technical field
The present invention relates in terms of semiconductor industry, especially solar cell, more particularly to a kind of thin film solar
The plasma texture method of battery AZO films.
Background technology
With energy scarcity, the aggravation of problem of environmental pollution, each state is all stepping up the developing steps of photovoltaic industry.At present,
Low in order to solve the problems, such as solar cell high cost, efficiency, various new technologies and new technology are used in the preparation of battery.
In the technology that solar cell improves transformation efficiency, optical optimization is a kind of important optimisation technique, its objective is to increase too
The incident intensity or photon flux of positive energy inside battery.Increasing photon flux means that solar cell can be with significantly more efficient profit
With incident photon, increase photogenerated current, realize the transformation efficiency more increased, reduce the cost of photovoltaic generation.Realize optical optimization
Mode mainly have antireflective film, condenser system, light trapping structure.Wherein, light trapping structure is to enter solar-electricity by increasing photon
Optical length behind pond is light trapping effect (Light Trapping Effect) improving the conversion efficiency of solar cell.
Surface-texturing (Texturing) is to prepare irregular groove in solar cell front surface or back surface or fall
Pyramid structure, forms light trapping structure, light is produced scattering in solar cells and is reflected, so that the light direction of propagation
Increase with the angle of surface normal, the light into solar cell can be propagated through different light paths, increased battery pair
The absorption of photon.
Al-Doped ZnO (AZO) film not only possesses high visible saturating as a kind of transparent conductive oxide film (TCO)
The advantage of rate and low-resistivity is crossed, is also had the advantages that not available for other TCO such as ITO, FTO：Abundant raw material is easy to get, aluminium doping
Easily, environmental friendliness, and in high temperature hydrogen plasma environment, chemical stability is high, is the preferable electrode of thin-film solar cells
Material, and be used widely, the research to its surface-texturing is also more and more.At present, the method master of AZO surface-texturings
Have two kinds, one is to carry out wet etching to the AZO films for depositing, two be when AZO films are prepared, it is straight by controlling technological parameter
Connect the AZO films for sputtering matte on the glass substrate.Wet etching is mainly using the acid or aqueous slkali of dilution to AZO surfaces
Carry out chemical attack and reach texturing effect, acid solution mainly has hydrochloric acid, sulfuric acid, hydrofluoric acid etc., and aqueous slkali mainly has hydroxide
Sodium, ammonium chloride solution etc..Wet etching has the advantages that large-area treatment substrate, etching speed are fast, but, due to etching speed
It is too fast, it is not easy to control etching process, meanwhile, the use of sour or aqueous slkali easily causes environmental pollution.For directly preparing suede
The mode of face AZO films, as during sputtering sedimentation, particle energy is limited, its texturing DeGrain.
The content of the invention
For the problems referred to above, the present invention provides a kind of plasma texture method of thin-film solar cells AZO film.Its
Principle is：Reaction interior power be applied to by the inductively effect of radio frequency source, make the gas ionization being passed through produce plasma
Body, contains ion, electronics, free radical isoreactivity particle in plasma；These active particles clash into AZO film surfaces realizes thing
Reason etching, and chemical etching is realized with its surface generation chemical reaction.
The technical solution adopted in the present invention is：A kind of plasma texture method of thin-film solar cells AZO film,
Its step includes：
Step one, cleaning AZO glass substrates, are sent to plasma the AZO glass substrates for cleaning up by Sample Room
In the substrate frame of etching apparatus reative cell；
Step 2, heating power supply is opened, substrate frame is heated；
Step 3, reative cell is vacuumized, until the background vacuum of reative cell is 1 × 10-4-3×10-3Pa；
Step 4, while be passed through reacting gas nitrogen and hydrogen, and adjust reative cell operating air pressure for 0.3-15Pa；
Step 5, unlatching radio-frequency power supply, preheat 5 minutes, arrange power, adjust matching, produce plasma up to build-up of luminance；
Step 6, continue to be passed through nitrogen and hydrogen, and keep heating-up temperature, start simultaneously at timed etch；
Step 7, reach etch period after, close radio-frequency power supply, close heating power supply, close gas, reative cell is taken out
Gas, after two hours, takes out AZO glass substrates, that is, completes the etching of AZO glass substrates.
Described AZO glass substrates AZO film thickness is 400nm-2 μm.
The cleaning step of described step one AZO glass substrates includes：First clear water is added to rinse with cleanser, until no gas
Bubble, then cleaned with acetone, then with 95% alcohol flushing after, be cleaned by ultrasonic again 20 minutes with ethanol solution, finally spend from
After sub- water is rinsed, deionized water is cleaned by ultrasonic 20 minutes again, is then dried up with high pure nitrogen.
The step 2 substrate frame heating-up temperature is 150-300 DEG C.
The nitrogen flow that the step 4 is passed through is 5-20sccm, and hydrogen flowing quantity is 1-10sccm.
The radio-frequency power supply frequency of the step 5 is 400KHz-13.56MHz, and power is 300-2000W.
The etch period of the step 6 is 1-20 minutes.
In sum the invention has the advantages that：
1st, the present invention is including physical etching and chemically etches, and can reach the effect of wet etching, simultaneously as not
Using corrosive solution, it is to avoid reaction solution deals with pollution on the environment improperly.
2nd, the present invention not only can produce isotropic etching to AZO surfaces, while to AZO textured surfaces pitfall depth
On have an anisotropic etching, improve the light trapping effect of AZO textured surfaces.
3rd, the present invention can pass through to control the heating-up temperature of substrate frame, be passed through gas flow, RF source power and frequency, quarter
The erosion time improves the controllability of etching.
Description of the drawings
Fig. 1 is a kind of flow chart of the plasma texture method of thin-film solar cells AZO film of the invention；
Fig. 2 is the reactive plasma texture method of the AZO films in the present invention for thin film solar cell electrode
Planar coil inductively coupled plasma etching schematic device；
Fig. 3 is AZO surface SEM shape appearance figure of the present invention without etching processing；
AZO surface SEM shape appearance figures of the Fig. 4 for the embodiment of the present invention one；
AZO surface SEM shape appearance figures of the Fig. 5 for the embodiment of the present invention two；
AZO surface SEM shape appearance figures of the Fig. 6 for the embodiment of the present invention three；
Fig. 7 is the AZO reflectivity of optical thin film spectrum before and after the etching of the embodiment of the present invention one.
Description of reference numerals：
Fig. 2：201 radio-frequency antennas, 202 quartz discs, 203 gas accesses, 204AZO glass substrates, 205 reative cells, 206
Substrate frame, 207 gas vents can be heated；
Specific embodiment
The present invention is described further with reference to embodiment：
Embodiment one
To AZO glass substrates, first clear water is added to rinse with cleanser, until no bubble；Then cleaned with acetone, then used
95% alcohol flushing, and be cleaned by ultrasonic 20 minutes with ethanol solution；Last deionized water is rinsed, and deionized water is super
Sound is cleaned 20 minutes, is then dried up with high pure nitrogen, standby.
The AZO glass substrates for cleaning up are sent to into Sample Room, plasma etching dress is sent to substrate by Sample Room
Put in the substrate frame of reative cell；Heating power supply is opened, substrate frame is heated, and keep heating-up temperature to be 200 DEG C；Will be anti-
Room vacuum is answered to be evacuated to 1.5 × 10-4Pa；Nitrogen and hydrogen are passed through, its flow is respectively 8sccm and 2.5sccm；Adjustment reative cell
Operating air pressure so as to be maintained at 3Pa；Open radio-frequency power supply, preheat 5 minutes, arrange frequency and power be respectively 456KHz and
1800W；Radio-frequency match is adjusted, until build-up of luminance produces plasma；Continue to be passed through above-mentioned nitrogen and hydrogen, and keep to substrate frame
200 DEG C heating, start simultaneously at timing；After 2 minutes, radio-frequency power supply is closed, close heating power supply, close nitrogen and hydrogen, it is right
Reative cell is evacuated, and after two hours, takes out AZO glass substrates, that is, completes the etching of AZO glass substrates.
Surface topography table is carried out to the AZO glass substrates before and after etching with SEM (JEOL JSM-6700F)
Levy, see Fig. 3 without the SEM patterns on the AZO surfaces of reactive ion etching, there is a pitfall on its surface, the horizontal direction of pitfall it is flat
Size is 320nm, and the SEM patterns through the reactive ion etching AZO surfaces of 2 minutes are shown in Fig. 4, and its surface pitfall density increases
Plus, the average-size of pitfall horizontal direction is 290nm.Reflectivity spectral before and after AZO glass substrates etching is shown in Fig. 7, etches 2 minutes
AZO glass substrates averagely reduce by 10% than the reflectivity that do not etch.
Embodiment two
Method of the cleaning of AZO glass substrates using embodiment one；The AZO glass substrates for cleaning up are sent to into sample introduction
Room, is sent to substrate in the substrate frame of plasma etching apparatus reative cell by Sample Room；Heating power supply is opened, to substrate frame
Heated, and keep heating-up temperature to be 200 DEG C；Reative cell vacuum is evacuated to into 1.5 × 10-4Pa；Nitrogen and hydrogen are passed through,
Its flow is respectively 8sccm and 2.5sccm；Adjustment reative cell operating air pressure so as to be maintained at 3Pa；Open radio-frequency power supply, preheating
5 minutes, frequency is set and power is respectively 456KHz and 1800W；Radio-frequency match is adjusted, until build-up of luminance produces plasma；After
It is continuous to be passed through above-mentioned nitrogen and hydrogen, and kept for 200 DEG C to substrate frame heat, start simultaneously at timing；After 10 minutes, radio frequency is closed
Power supply, closes heating power supply, closes nitrogen and hydrogen, and reative cell is evacuated, and after two hours, takes out AZO glass substrates, i.e., complete
Into the etching of AZO glass substrates.
With SEM (JEOL JSM-6700F) to etching 10 minutes after AZO glass substrates carry out surface table
Levy, its SEM figure is as shown in Figure 5.
Embodiment three
Method of the cleaning of AZO glass substrates using embodiment one；The AZO glass substrates for cleaning up are sent to into sample introduction
Room, is sent to substrate in the substrate frame of plasma etching apparatus reative cell by Sample Room；Heating power supply is opened, to substrate frame
Heated, and keep heating-up temperature to be 200 DEG C；Reative cell vacuum is evacuated to into 1.5 × 10-4Pa；Nitrogen and hydrogen are passed through,
Its flow is respectively 7sccm and 3sccm；Adjustment reative cell operating air pressure so as to be maintained at 3Pa；Open radio-frequency power supply, preheating 5
Minute, frequency is set and power is respectively 456KHz and 1200W；Radio-frequency match is adjusted, until build-up of luminance produces plasma；Continue
Above-mentioned nitrogen and hydrogen are passed through, and are kept for 200 DEG C to substrate frame heat, start simultaneously at timing；After 10 minutes, radio frequency electrical is closed
Source, closes heating power supply, closes nitrogen and hydrogen, and reative cell is evacuated, and after two hours, takes out AZO glass substrates, that is, completes
The etching of AZO glass substrates.With SEM (JEOL JSM-6700F) to etching ten minutes after AZO glass substrates
Surface Characterization is carried out, its SEM figure is as shown in Figure 6.
Example IV
Method of the cleaning of AZO glass substrates using embodiment one；The AZO glass substrates for cleaning up are sent to into sample introduction
Room, is sent to substrate in the substrate frame of plasma etching apparatus reative cell by Sample Room；Heating power supply is opened, to substrate frame
Heated, and keep heating-up temperature to be 200 DEG C；Reative cell vacuum is evacuated to into 1.5 × 10-4Pa；Nitrogen and hydrogen are passed through,
Its flow is respectively 8sccm and 2.5sccm；Adjustment reative cell operating air pressure so as to be maintained at 3Pa；Open radio-frequency power supply, preheating
5 minutes, frequency is set and power is respectively 13.56MHz and 450W；Radio-frequency match is adjusted, until build-up of luminance produces plasma；After
It is continuous to be passed through above-mentioned nitrogen and hydrogen, and kept for 200 DEG C to substrate frame heat, start simultaneously at timing；After 5 minutes, radio frequency is closed
Power supply, closes heating power supply, closes nitrogen and hydrogen, and reative cell is evacuated, and after two hours, takes out AZO glass substrates, i.e., complete
Into the etching of AZO glass substrates.
Claims (7)
1. a kind of plasma texture method of thin-film solar cells AZO film, it is characterised in that comprise the steps：
Step one, cleaning AZO glass substrates, are sent to plasma etching the AZO glass substrates for cleaning up by Sample Room
In the substrate frame of equipment reaction chamber；
Step 2, heating power supply is opened, substrate frame is heated；
Step 3, reative cell is vacuumized, until the background vacuum of reative cell is 1 × 10-4-3×10-3Pa；
Step 4, while be passed through reacting gas nitrogen and hydrogen, and adjust reative cell operating air pressure for 0.3-15Pa；
Step 5, unlatching radio-frequency power supply, preheat 5 minutes, arrange power, adjust matching, produce plasma up to build-up of luminance；
Step 6, continue to be passed through nitrogen and hydrogen, and keep heating-up temperature, start simultaneously at timed etch；
Step 7, reach etch period after, close radio-frequency power supply, close heating power supply, close gas, to reative cell be evacuated, two
After individual hour, AZO glass substrates are taken out, that is, completes the etching of AZO glass substrates；
The cleaning step of the step one AZO glass substrates includes：First clear water is added to rinse with cleanser, until no bubble, so
Cleaned with acetone afterwards, then with 95% alcohol flushing after, be cleaned by ultrasonic again 20 minutes with ethanol solution, the punching of last deionized water
Wash, deionized water is cleaned by ultrasonic 20 minutes again, is then dried up with high pure nitrogen.
2. the plasma texture method of thin-film solar cells AZO film as claimed in claim 1, it is characterised in that：It is described
The AZO film thicknesses of AZO glass substrates are 400nm-2 μm.
3. the plasma texture method of thin-film solar cells AZO film as claimed in claim 1, it is characterised in that：It is described
Step 2 substrate frame heating-up temperature is 150-300 DEG C.
4. the plasma texture method of thin-film solar cells AZO film as claimed in claim 1, it is characterised in that：It is described
The nitrogen flow that step 4 is passed through is 5-20sccm, and hydrogen flowing quantity is 1-10sccm.
5. the plasma texture method of thin-film solar cells AZO film as claimed in claim 1, it is characterised in that：It is described
The radio-frequency power supply frequency of step 5 is 400KHz-13.56MHz, and power is 300-2000W.
6. the plasma texture method of thin-film solar cells AZO film as claimed in claim 1, it is characterised in that：It is described
The etch period of step 6 is 1-20 minutes.
7. the plasma texture method of thin-film solar cells AZO film as claimed in claim 1, it is characterised in that：It is described
Substrate frame heating-up temperature is 200 DEG C, and reative cell vacuum is 1.5 × 10-4Pa, nitrogen and hydrogen flowing quantity be respectively 8sccm and
2.5sccm, rf frequency and power are respectively 456KHz and 1800W, and etch period is 2 minutes.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101308882A (en) * | 2008-07-22 | 2008-11-19 | 东莞宏威数码机械有限公司 | Preparing method of transparent electricity conductive oxide suede |
| CN102254799A (en) * | 2011-08-19 | 2011-11-23 | 中国科学院电工研究所 | Method for preparing AZO antireflective film of solar cell |
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| EP1840966A1 (en) * | 2006-03-30 | 2007-10-03 | Universite De Neuchatel | Transparent, conducting and textured layer and method of fabrication |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101308882A (en) * | 2008-07-22 | 2008-11-19 | 东莞宏威数码机械有限公司 | Preparing method of transparent electricity conductive oxide suede |
| CN102254799A (en) * | 2011-08-19 | 2011-11-23 | 中国科学院电工研究所 | Method for preparing AZO antireflective film of solar cell |
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