CN101719528B - Method for optical control preparation of silicon film solar batteries on glass substrate and settling chamber - Google Patents
Method for optical control preparation of silicon film solar batteries on glass substrate and settling chamber Download PDFInfo
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- CN101719528B CN101719528B CN2009101725695A CN200910172569A CN101719528B CN 101719528 B CN101719528 B CN 101719528B CN 2009101725695 A CN2009101725695 A CN 2009101725695A CN 200910172569 A CN200910172569 A CN 200910172569A CN 101719528 B CN101719528 B CN 101719528B
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Abstract
The invention discloses a method for the optical control preparation of silicon film solar batteries on a glass substrate and a settling chamber suitable for the method. The method comprises the following steps of: settling a silicon film in the settling chamber by using transparent conductive oxide (TCO) glass with texture as a substrate; illuminating with light of a needed frequency; and settling sequentially using plasmas reaction to prepare stable and uniform silicon film solar batteries of p, i, n layers, wherein the frequency of light is 1012-1017Hz, and the illumination time annealing is 2-20 minutes. Photon of different frequencies have different energies, generate polysilicon films of different properties; the settling step and the illumination step can be once finished the settling and the illumination annealing in the settling chamber and alternately carried out many times as required. The preparation method greatly lowers the process complexity and decreases the production cost, hardly separates the glass and the silicon films, and improves the crystallization effect of the silicon films and the efficiency and the stability of the silicon film batteries thereof.
Description
Technical field
The invention belongs to field of photoelectric technology, relate to a kind of method that on glass substrate, prepares the thin solar cell of silicon.
Background technology
The preparation silicon film solar batteries is the developing direction of following solar cell potentialization on glass substrate; Glass has good light transmission; With low cost, have certain intensity, can anti-certain high temperature; And be a kind of construction material, preparation silicon film solar batteries great commercial value on the glass substrate of cheapness.The silicon thin film that preparation needs is the key of making thin-film solar cells; Silicon film solar batteries is divided into non-crystal silicon solar cell, microcrystalline silicon solar cell and multi-crystal silicon film solar battery; Because the restriction that the simple glass strain point is low so use plasma chemical reactive vapour deposition (PlasmaEnhance Chemical Vapor Deposition CVD) amorphous silicon membrane usually, prepares amorphous silicon thin-film solar cell then; Amorphous silicon thin-film solar cell is business-like the earliest hull cell; After amorphous silicon was introduced a large amount of hydrogen (10%), energy gap was elevated to 1.7eV from 1.1eV, and very strong light absorption is arranged.But; Amorphous silicon battery is during for a long time by rayed; Battery efficiency can descend significantly, so-called photic decline (S-W) effect that Here it is, and this is the subject matter that the amorphous silicon membrane battery runs into; So, people through conventional resistance furnace heat, methods such as aluminium is induced, laser scanning again crystallization do polycrystalline silicon thin film solar cell.Preparing silicon thin film method commonly used is at first to use plasma chemical reactive vapour deposition amorphous silicon membrane, secondary crystallization then.By the height division of crystallization treatment temperature again, be divided three classes at present: low temperature process, middle temperature technology and high-temperature technology.Low temperature is meant that the treatment temperature of cell preparation process is below 550 ℃.The substrate of suitable this type battery has glass, stainless steel and plastics etc. usually, prepares crystallite dimension through direct sedimentation and is only receiving the thin film solar cell of brilliant scope (tens about nm).Its great advantage is exactly that the heat energy that drops into is few, can utilize cheapness, transparent, be easy to large-area preparation.The treatment temperature that middle temperature is meant the cell preparation process is at 550-1000 ℃.Utilize PECVD method low temperature depositing silicon thin film on can the substrates such as glass of anti-higher temperature earlier, warm crystallization process (550-1000 ℃) increases crystal grain in adopting then, the preparation hull cell.High temperature is meant that the treatment temperature of cell preparation process is more than 1000 ℃.In general, high-temperature technology is prepared oarse-grained silicon thin film easily, still, is difficult at present find at the bottom of a kind of free of contamination high temperature-resistant liner of cheapness, and power consumption is high in addition, cost high (such as using laser crystallization); With regard to low temperature process, less with the silicon thin film crystal grain that the PECVD method directly deposits, defective is more, photoelectric properties are relatively poor.In a word, with plasma chemical reactive vapour deposition amorphous silicon membrane, secondary crystallization prepares that silicon-film solar-cell need deposit in the settling chamber, secondary crystallization is accomplished step by step then, complex process, and the commercial Application cost is high.In addition, in amorphous silicon membrane annealing preparation polysilicon membrane process, silicon thin film and glass substrate often take place has tangible segregation phenomenon.
Summary of the invention
Be to solve the above-mentioned defective that prior art exists, the object of the present invention is to provide a kind of on glass substrate photocontrol be equipped with the method for silicon film solar batteries.This preparation method reduces process complexity and production cost greatly, and glass and silicon fiml are not easily separated, improves the crystallization effect of silicon thin film and the efficient and the stability of silicon thin-film battery thereof.
For realizing the foregoing invention purpose; The technical scheme that the present invention adopts is: photocontrol is equipped with the method for silicon film solar batteries on this glass substrate, it is characterized in that it being to be prepared from by following step: the glass of the nesa coating that has texture that 1, cleans with standard technology is substrate; 2, the glass substrate that will clean places the settling chamber, with the illumination of required frequency, and successively with the plasma reaction deposition, preparation stabilized uniform p, i, n layer silicon film solar batteries, using frequency is 1.2 * 10
14Hz and 2 * 10
15The Hz irradiation; Illumination annealing time 2-70 minute, the photon energy of different frequencies is different, produces polysilicon membrane of different nature, under vacuum state, naturally cools to room temperature;
3, take out then, and then evaporation metal electrode aluminium, battery electrode is drawn from nesa coating and aluminium, so just the thin solar cell of preparation silicon on glass substrate.
The step of further said deposition and illumination can deposit in the settling chamber, illumination annealing is once accomplished.
The step of said deposition and illumination can deposit in the settling chamber as required, illumination annealing is alternately repeatedly carried out.
Maximum temperature in the said illumination annealing in process process should be higher than the glass softening point temperature a little, can make glass softening like this, adapts because of the variation that produces in the processing procedure with silicon fiml.
Said settling chamber is provided with optical window, and light source is installed in the outside of settling chamber's optical window, and the light that light source sends is transmitted on this settling chamber's substrate through optical window.
Said optical window is a quartz glass, does not influence the transmission of light.
Said settling chamber is provided with and can wipes sedimental dust cleaning apparatus on settling chamber's inwall quartz glass.
Said dust cleaning apparatus has mechanical arm, the dust blowing brush that the end of mechanical arm is connected with.
Said dust cleaning apparatus has pole hinged in the settling chamber, and the pole end is connected with the dust blowing brush, on the outer wall of the corresponding settling chamber of pole, is provided with magnetic driver, through the reciprocating motion of magnetic driver control pole.
Adopt the beneficial effect of technique scheme: the inventive method is compared with conventional method, use help crystallization, can control frequency rayed, can improve the crystallization effect of silicon thin film, the efficient and the stability of raising silicon thin-film battery on the one hand; On the other hand because removed the light of other unnecessary frequencies in traditional illumination method, thus the deposition indoor temperature reduced, thus can use cheap low softening point glass, reduce production costs; Photo-annealing and PECVD method depositing silicon film be an indoor completion in addition, thereby make technology simple.The softening point temperature of glass substrate is suitable with the illumination annealing temperature; The softening point temperature of glass is complementary with the highest annealing temperature point; Maximum temperature in the processing procedure should be higher than the glass softening point temperature a little, can make glass softening like this, adapts because of the variation that produces in the processing procedure with silicon fiml; Just can form an integral body so in process of production, the phenomenon that glass and silicon fiml are separated not occur.The settling chamber is provided with and can wipes sedimental dust-scraping device on settling chamber's inwall quartz glass, has guaranteed light-struck stability.In a word, this method makes the simple and production cost reduction of preparation silicon film solar batteries technology.
Description of drawings
Below in conjunction with accompanying drawing specific embodiment of the present invention is done further detailed explanation.
Fig. 1 is the used settling chamber's structural representation of the inventive method.
Embodiment
Embodiment
The present invention prepares the thin solar cell of silicon on glass substrate method is to be prepared from by following step:
The glass of the nesa coating that has texture that 1, cleans with standard technology is substrate, and concrete steps are following: (1) is at first cleaned glass with washing agent, and with ultrasonic waves for cleaning 5 minutes; (2) deionized water cleans up washing agent, uses acetone again, equally also uses ultrasonic waves for cleaning 5 minutes, removes greasy dirt; (3) with deionized water that acetone is clean, use alcohol wash again, equally also used ultrasonic waves for cleaning 5 minutes; (4) with deionized water that alcohol wash is clean, used ultrasonic waves for cleaning again 5 minutes; (5) be soaked in the deionized water, the clean tweezers of usefulness pick up a jiao of glass, vertically slowly pull out the water surface, and whether even moisture film is arranged on the sight glass, and then oven dry is arranged, and do not have and then repeat above-mentioned four steps; (6) glass of drying is placed put into culture dish on the clean filter paper and add a cover preservation.
2, the glass substrate that will clean places the settling chamber, and radio frequency glow discharge decomposes source of the gas phosphine, silane and borine successively, feeds hydrogen simultaneously, successively preparation deposition p type, i type, three layers of silicon thin film of n type on glass substrate; Vacuum degree 5.6 * 10-4Pa, hydrogen thinner ratio 95%, electrode spacing 2cm in the settling chamber; Operating air pressure 133.3Pa, discharge power are 60W, and underlayer temperature is 300 ℃; Sedimentation time was followed successively by 7 minutes, 70 minutes and 20 minutes, and simultaneously, using frequency is 1.2 * 10
14Hz and 2 * 10
15The Hz irradiation, the step of deposition and illumination can deposit in the settling chamber, illumination annealing is once accomplished, and the step of said deposition and illumination can deposit in the settling chamber as required, illumination annealing is alternately repeatedly carried out.The softening point temperature of glass substrate is suitable with the illumination annealing temperature; The softening point temperature of glass is complementary with the highest annealing temperature point; Maximum temperature in the processing procedure should be higher than the glass softening point temperature a little, can make glass softening like this, adapts because of the variation that produces in the processing procedure with silicon fiml; Just can form an integral body so in process of production, the phenomenon that glass and silicon fiml are separated not occur.Under vacuum state, naturally cool to room temperature, take out then, and then evaporation metal electrode aluminium (Al).Battery electrode is drawn from nesa coating and aluminium, and so just preparation silicon approaches solar cell on glass substrate, and its structure can be expressed as glass/TCO/pin/Al.
Like the used settling chamber of the said the present invention of Fig. 1, have settling chamber's housing 1, on housing 1, be provided with optical window 3, light source 2 is installed in the outside of settling chamber's optical window, and the light that light source sends is transmitted on this settling chamber's substrate through optical window.Optical window 3 is silica glass materials, does not influence the transmission of light.Can wipe sedimental dust cleaning apparatus 4 on settling chamber's inwall quartz glass being provided with in the settling chamber; Dust cleaning apparatus has mechanical arm; The dust blowing brush that the end of mechanical arm is connected with; By the reciprocating motion of drive mechanism mechanical arm, remove the long-pending thing on settling chamber's inwall quartz glass thereby drive the dust blowing brushing, do not influence the transmission of light.Dust cleaning apparatus 4 can also be the pole hinged in the settling chamber; The pole end is connected with the dust blowing brush; On the outer wall of the corresponding settling chamber of pole, be provided with magnetic driver,, thereby make the dust blowing brushing remove deposit on settling chamber's inwall quartz glass through the reciprocating motion of magnetic driver control pole.
Claims (4)
1. photocontrol is equipped with the method for silicon film solar batteries on the glass substrate, it is characterized in that it being to be prepared from by following step:
The glass of the nesa coating that has texture that (1), cleans with standard technology is substrate;
(2), the glass substrate that will clean places the settling chamber, with the illumination of required frequency, successively with the plasma reaction deposition, preparation stabilized uniform p, i, n layer silicon film solar batteries, using frequency is 1.2 * 10
14Hz and 2 * 10
15The Hz irradiation; Illumination annealing time 2-70 minute, the photon energy of different frequencies is different, produces polysilicon membrane of different nature, under vacuum state, naturally cools to room temperature;
(3), then take out, and then evaporation metal electrode aluminium, battery electrode is drawn from nesa coating and aluminium, so just on glass substrate, prepares silicon and approaches solar cell.
2. photocontrol is equipped with the method for silicon film solar batteries on the glass substrate according to claim 1, it is characterized in that: the step of said deposition and illumination can deposit in the settling chamber, illumination annealing is once accomplished.
3. photocontrol is equipped with the method for silicon film solar batteries on the glass substrate according to claim 1, it is characterized in that: the step of said deposition and illumination can deposit in the settling chamber as required, illumination annealing is alternately repeatedly carried out.
4. photocontrol is equipped with the method for silicon film solar batteries on the glass substrate according to claim 1; It is characterized in that: the maximum temperature in the said illumination annealing in process process should be higher than the glass softening point temperature a little; Can make glass softening like this, adapt because of the variation that produces in the processing procedure with silicon fiml.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101725695A CN101719528B (en) | 2009-11-16 | 2009-11-16 | Method for optical control preparation of silicon film solar batteries on glass substrate and settling chamber |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101725695A CN101719528B (en) | 2009-11-16 | 2009-11-16 | Method for optical control preparation of silicon film solar batteries on glass substrate and settling chamber |
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| Publication Number | Publication Date |
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| CN101719528A CN101719528A (en) | 2010-06-02 |
| CN101719528B true CN101719528B (en) | 2012-01-04 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102102192A (en) * | 2010-11-19 | 2011-06-22 | 河南安彩高科股份有限公司 | Method for promoting crystallization of silicon film on glass substrate by using light with specific wavelength |
| CN102496663A (en) * | 2011-12-29 | 2012-06-13 | 普乐新能源（蚌埠）有限公司 | Method for reducing attenuation rate of amorphous silicon solar cell |
| CN102637780B (en) * | 2012-04-27 | 2014-04-02 | 保定天威薄膜光伏有限公司 | Preparation method for improving performance of industrial silicon thin-film cell component |
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Inventor after: Jin Ruimin Inventor after: Chen Lanli Inventor after: Luo Penghui Inventor after: Wang Shengzhao Inventor after: Hu Ruihua Inventor before: Jin Ruimin Inventor before: Li Dingzhen Inventor before: Wang Yucang Inventor before: Guo Xinfeng |
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Free format text: CORRECT: INVENTOR; FROM: JIN RUIMIN LI DINGZHEN WANG YUCANG GUO XINFENG TO: JIN RUIMIN CHEN LANLI LUO PENGHUI WANG SHENGZHAO HU RUIHUA |
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