CN106835012A - A kind of preparation method of matte aluminum-doped zinc oxide films - Google Patents
A kind of preparation method of matte aluminum-doped zinc oxide films Download PDFInfo
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- CN106835012A CN106835012A CN201611188162.8A CN201611188162A CN106835012A CN 106835012 A CN106835012 A CN 106835012A CN 201611188162 A CN201611188162 A CN 201611188162A CN 106835012 A CN106835012 A CN 106835012A
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- zinc oxide
- doped zinc
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- oxide films
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000010408 film Substances 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000004793 Polystyrene Substances 0.000 claims abstract description 20
- 229920002223 polystyrene Polymers 0.000 claims abstract description 20
- 238000000465 moulding Methods 0.000 claims abstract description 16
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 8
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 6
- 230000000640 hydroxylating effect Effects 0.000 claims abstract description 6
- 239000007800 oxidant agent Substances 0.000 claims abstract description 6
- 230000001590 oxidative effect Effects 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 239000004530 micro-emulsion Substances 0.000 claims abstract description 4
- 239000007787 solid Substances 0.000 claims abstract description 4
- 238000011282 treatment Methods 0.000 claims abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 239000011259 mixed solution Substances 0.000 claims description 3
- 239000011224 oxide ceramic Substances 0.000 claims description 3
- 229910052574 oxide ceramic Inorganic materials 0.000 claims description 3
- 238000001338 self-assembly Methods 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005477 sputtering target Methods 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- 239000013077 target material Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- 229920006389 polyphenyl polymer Polymers 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 1
- 238000003912 environmental pollution Methods 0.000 abstract description 3
- 229960001296 zinc oxide Drugs 0.000 description 9
- 239000000243 solution Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laminated Bodies (AREA)
- Surface Treatment Of Glass (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention discloses a kind of preparation method of matte aluminum-doped zinc oxide films, comprises the following steps：S1, substrate of glass is taken, hydroxylating treatment is carried out to glass basic surface；S2, with the polystyrene sphere microemulsion of solid content 0.01~0.10% hydroxylated glass basic surface prepare polystyrene moulding layer；S3, using DC magnetron sputtering process, prepare the AZO films that thickness is 500~900nm on polystyrene moulding layer；S4, by be heat-treated removal polystyrene moulding layer, AZO films is divided into the upper AZO film layers and lower AZO film layers of hollow out；S5, gluing oxidant layer is prepared in upper AZO thin-film surfaces, upper AZO film layers are transferred to another substrate surface, finally give matte aluminum-doped zinc oxide films；Give up traditional matte preparation method, it is to avoid the shortcoming that conventional etch process is difficult to control to, environmental pollution is larger, process is simple, low cost.
Description
Technical field
The present invention relates to solar battery thin film technical field, specifically a kind of preparation of matte aluminum-doped zinc oxide films
Method.
Background technology
Aluminium-doped zinc oxide (AZO) film is a kind of transparent conductive film material with excellent photoelectric properties, and is had
Raw material is easy to get, price is relatively low, less pollution, preferable thermo-chemical stability the advantages of so that turn into preferable ito thin film substitute material
Material.
AZO has in silica-based solar cell, thin-film solar cells as preceding electrode and is widely applied, solar-electricity
Absorption of the absorbed layer in pond to incident light is limited, therefore it is very necessary that one layer of sunken light suede structure is designed on transparent front electrode.
Suede structure increases incident sunshine light path in solar cells by strengthening refraction and scattering to incident light, improves
Film to the absorptivity of light, so as to improve the photoelectric transformation efficiency of solar cell.
At present, traditional AZO film matte preparation methods are divided into pre-etching of film etching and plated film front glass substrate etc.,
The film for preparing is performed etching to form matte or first perform etching glass substrate, the coarse matte knot of substrate is formed
Plated film forms matte on the glass substrate of matte after structure.Lithographic method mainly has wet etching and dry etching, i.e., using one
Determine acid solution corrosion or the laser plasma etching of concentration.These traditional matte preparation methods have complex procedures, energy
Source consumes the shortcomings of larger, etching process is difficult to control to, environmental pollution is larger.
The content of the invention
It is an object of the invention to provide a kind of preparation method of matte aluminum-doped zinc oxide films, the letter of the method technique
Single, process is easily controlled, low cost.
The technical solution adopted for the present invention to solve the technical problems is：
A kind of preparation method of matte aluminum-doped zinc oxide films, comprises the following steps：
S1, substrate of glass is taken, hydroxylating treatment is carried out to glass basic surface；
S2, polyphenyl is prepared in hydroxylated glass basic surface with the polystyrene sphere microemulsion of solid content 0.01~0.10%
Ethene template layer；
S3, using DC magnetron sputtering process, prepare the AZO films that thickness is 500~900nm on polystyrene moulding layer；
S4, by be heat-treated removal polystyrene moulding layer, AZO films is divided into the upper AZO film layers and lower AZO films of hollow out
Layer；
S5, gluing oxidant layer is prepared in upper AZO thin-film surfaces, upper AZO film layers are transferred to another substrate surface, finally given
Matte aluminum-doped zinc oxide films.
Further, the hydroxylating in the step S1 is processed as substrate of glass being placed in volume ratio 7:3 concentrated sulfuric acid with
In the mixed solution of hydrogen peroxide, 1~3h is soaked in the environment of 50~70 DEG C, it is repeatedly clear with absolute ethyl alcohol with deionized water afterwards
Wash and obtain hydroxylated substrate of glass.
Further, the step S2 polystyrene mouldings layer can be using spin coating, blade coating or vertical dipping self-assembly method work
It is prepared by skill.
Further, the step S3 DC magnetron sputtering process is with the mixed oxide ceramic target of Al and Zn as sputtering target
Material, target 5~10cm of spacing, 20~50sccm of argon flow amount, 150~400W of sputtering power, 0.1~1.0Pa of operating pressure.
Further, the temperature of the step S4 heat treatments is 400~600 DEG C, 1.5~4.0h of heat treatment time.
The beneficial effects of the invention are as follows, give up traditional matte preparation method, polystyrene moulding is prepared by liquid phase method
Layer, AZO films are prepared by magnetron sputtering, after removal polystyrene moulding layer, the medial surface self-assembling formation suede of upper AZO film layers
Face, after it is separated with lower AZO film layers 3b, upper AZO film layers medial surface upset is changed into lateral surface, that is, obtain the doping of matte aluminium
Zinc-oxide film AZO films, it is to avoid the shortcoming that conventional etch process is difficult to control to, environmental pollution is larger, process is simple, cost
It is low.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples：
Fig. 1 is the schematic diagram of step S2 of the present invention；
Fig. 2 is the schematic diagram of step S3 of the present invention；
Fig. 3 is the schematic diagram of step S4 of the present invention；
Fig. 4 is the schematic diagram of step S5 of the present invention.
Specific embodiment
The present invention provides a kind of preparation method of matte aluminum-doped zinc oxide films, comprises the following steps：
S1, substrate of glass is taken, substrate of glass is placed in volume ratio 7:In 3 concentrated sulfuric acid and the mixed solution of hydrogen peroxide, 50~
1~3h is soaked in the environment of 70 DEG C, afterwards with deionized water and absolute ethyl alcohol cleaning repeatedly, is realized to glass basic surface
Hydroxylating treatment；
S2, as shown in figure 1, with the polystyrene sphere microemulsion of solid content 0.01~0.10% in the table of hydroxylated substrate of glass 1
Face prepares polystyrene moulding layer 2；Polystyrene moulding layer 2 can be using spin coating, blade coating or vertical dipping self-assembly method technique system
It is standby；
S3, with reference to shown in Fig. 2, using DC magnetron sputtering process, prepared on polystyrene moulding layer 2 thickness for 500~
The AZO films 3 of 900nm；DC magnetron sputtering process with the mixed oxide ceramic target of Al and Zn as sputtering target material, zinc oxide with
The mass ratio of aluminum oxide is 98：2, can directly be bought by market, target 5~10cm of spacing, 20~50sccm of argon flow amount, sputter work(
150~400W of rate, 0.1~1.0Pa of operating pressure；
S4, with reference to shown in Fig. 3, by be heat-treated removal polystyrene moulding layer, AZO films is divided into the upper AZO films of hollow out
Layer 3a and lower AZO film layers 3b；Heat treatment temperature is 400~600 DEG C, 1.5~4.0h of heat treatment time；
S5, with reference to shown in Fig. 4, prepare gluing oxidant layer 4 on upper AZO film layers 3a surfaces, be covered in gluing oxidant layer with another substrate 5
On 4, then substrate 5 is picked up, AZO film layers 3a is separated with lower AZO film layers 3b, upper AZO film layers 3a is transferred to base
The surface of plate 5, finally gives matte aluminum-doped zinc oxide films, and gluing oxidant layer 4 be able to can be made using polyurethane adhesive, substrate 5
With glass substrate or pet substrate.
After removal polystyrene moulding layer, the medial surface self-assembling formation matte of upper AZO film layers 3a, by it with
After AZO film layers 3b is separated, then the medial surface of upper AZO film layers 3a is turned into lateral surface, that is, obtains the doping oxidation of matte aluminium
Zinc film.
The above, is only presently preferred embodiments of the present invention, and any formal limitation is not made to the present invention；Appoint
What those of ordinary skill in the art, in the case where technical solution of the present invention ambit is not departed from, all using the side of the disclosure above
Method and technology contents make many possible variations and modification, or the equivalent reality for being revised as equivalent variations to technical solution of the present invention
Apply example.Therefore, every content without departing from technical solution of the present invention, is done according to technical spirit of the invention to above example
Any simple modification, equivalent, equivalence changes and modification, still fall within the range of technical solution of the present invention protection.
Claims (5)
1. a kind of preparation method of matte aluminum-doped zinc oxide films, it is characterised in that comprise the following steps：
S1, substrate of glass is taken, hydroxylating treatment is carried out to glass basic surface；
S2, polyphenyl is prepared in hydroxylated glass basic surface with the polystyrene sphere microemulsion of solid content 0.01~0.10%
Ethene template layer；
S3, using DC magnetron sputtering process, prepare the AZO films that thickness is 500~900nm on polystyrene moulding layer；
S4, by be heat-treated removal polystyrene moulding layer, AZO films is divided into the upper AZO film layers and lower AZO films of hollow out
Layer；
S5, gluing oxidant layer is prepared in upper AZO thin-film surfaces, upper AZO film layers are transferred to another substrate surface, finally given
Matte aluminum-doped zinc oxide films.
2. a kind of preparation method of matte aluminum-doped zinc oxide films according to claim 1, it is characterised in that the step
Hydroxylating in rapid S1 is processed as substrate of glass being placed in volume ratio 7:In 3 concentrated sulfuric acid and the mixed solution of hydrogen peroxide, 50
1~3h is soaked in the environment of~70 DEG C, is cleaned repeatedly with deionized water and absolute ethyl alcohol obtain hydroxylated glass base afterwards
Bottom.
3. a kind of preparation method of matte aluminum-doped zinc oxide films according to claim 1 and 2, it is characterised in that institute
Stating step S2 polystyrene mouldings layer can be prepared using spin coating, blade coating or vertical dipping self-assembly method technique.
4. a kind of preparation method of matte aluminum-doped zinc oxide films according to claim 3, it is characterised in that the step
Rapid S3 DC magnetron sputtering process with the mixed oxide ceramic target of Al and Zn as sputtering target material, target 5~10cm of spacing, argon gas stream
Amount 20~50sccm, 150~400W of sputtering power, 0.1~1.0Pa of operating pressure.
5. a kind of preparation method of matte aluminum-doped zinc oxide films according to claim 4, it is characterised in that the step
The temperature of rapid S4 heat treatments is 400~600 DEG C, 1.5~4.0h of heat treatment time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611188162.8A CN106835012A (en) | 2016-12-21 | 2016-12-21 | A kind of preparation method of matte aluminum-doped zinc oxide films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611188162.8A CN106835012A (en) | 2016-12-21 | 2016-12-21 | A kind of preparation method of matte aluminum-doped zinc oxide films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106835012A true CN106835012A (en) | 2017-06-13 |
Family
ID=59139507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611188162.8A Pending CN106835012A (en) | 2016-12-21 | 2016-12-21 | A kind of preparation method of matte aluminum-doped zinc oxide films |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611188A (en) * | 2017-09-06 | 2018-01-19 | 蚌埠玻璃工业设计研究院 | A kind of multilayer film transparent conducting glass preparation method with micro-structural |
| CN107611187A (en) * | 2017-09-06 | 2018-01-19 | 蚌埠玻璃工业设计研究院 | A kind of matte multilayer film transparent conducting glass |
| CN108165939A (en) * | 2017-12-25 | 2018-06-15 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of preparation method of matte AZO films |
| CN108767020A (en) * | 2018-06-04 | 2018-11-06 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of sunken light transparent conducting glass of silicon-based film solar cells |
| CN110300495A (en) * | 2018-03-23 | 2019-10-01 | 睿明科技股份有限公司 | Substrate film coating method |
| CN111574066A (en) * | 2020-06-23 | 2020-08-25 | 中建材蚌埠玻璃工业设计研究院有限公司 | Rapidly-heated anti-virus glass and preparation method thereof |
| CN114318264A (en) * | 2021-12-29 | 2022-04-12 | 福建富兰光学股份有限公司 | Method for preparing ITO film based on magnetron sputtering and etching treatment |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107611188A (en) * | 2017-09-06 | 2018-01-19 | 蚌埠玻璃工业设计研究院 | A kind of multilayer film transparent conducting glass preparation method with micro-structural |
| CN107611187A (en) * | 2017-09-06 | 2018-01-19 | 蚌埠玻璃工业设计研究院 | A kind of matte multilayer film transparent conducting glass |
| CN108165939A (en) * | 2017-12-25 | 2018-06-15 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of preparation method of matte AZO films |
| CN110300495A (en) * | 2018-03-23 | 2019-10-01 | 睿明科技股份有限公司 | Substrate film coating method |
| CN108767020A (en) * | 2018-06-04 | 2018-11-06 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of sunken light transparent conducting glass of silicon-based film solar cells |
| CN111574066A (en) * | 2020-06-23 | 2020-08-25 | 中建材蚌埠玻璃工业设计研究院有限公司 | Rapidly-heated anti-virus glass and preparation method thereof |
| CN114318264A (en) * | 2021-12-29 | 2022-04-12 | 福建富兰光学股份有限公司 | Method for preparing ITO film based on magnetron sputtering and etching treatment |
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