CN104174601B - The brushing device of semiconductor crystal wafer and scrub methods - Google Patents
The brushing device of semiconductor crystal wafer and scrub methods Download PDFInfo
- Publication number
- CN104174601B CN104174601B CN201410352938.XA CN201410352938A CN104174601B CN 104174601 B CN104174601 B CN 104174601B CN 201410352938 A CN201410352938 A CN 201410352938A CN 104174601 B CN104174601 B CN 104174601B
- Authority
- CN
- China
- Prior art keywords
- semiconductor crystal
- crystal wafer
- cleaning brush
- pivot
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 321
- 239000013078 crystal Substances 0.000 title claims abstract description 267
- 230000001680 brushing effect Effects 0.000 title claims abstract description 79
- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000004140 cleaning Methods 0.000 claims abstract description 151
- 230000008569 process Effects 0.000 claims abstract description 24
- 238000005201 scrubbing Methods 0.000 claims description 19
- 238000005507 spraying Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 206010017389 Frotteurism Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000276489 Merlangius merlangus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/30—Cleaning by methods involving the use of tools by movement of cleaning members over a surface
- B08B1/32—Cleaning by methods involving the use of tools by movement of cleaning members over a surface using rotary cleaning members
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a kind of brushing device and scrub methods of semiconductor crystal wafer.In the brushing device of semiconductor crystal wafer, cleaning brush contacts with the pivot of semiconductor crystal wafer, and the projection on a semiconductor wafer of the axis of cleaning brush is positioned at the position of pivot described in non-through.Cleaning brush contacts with the pivot of semiconductor crystal wafer, can, in semiconductor crystal wafer cleaning process, avoid semiconductor crystal wafer center to be missed; The axis projection on a semiconductor wafer of cleaning brush is positioned at the position of pivot described in non-through, avoid making the pivot of described semiconductor crystal wafer be positioned at the maximum position of pressurized all the time, improve the radiating rate of the pivot of semiconductor crystal wafer simultaneously, thus semiconductor crystal wafer pivot produces higher heat problem than other parts can be reduced, and then avoid treating at semiconductor crystal wafer the defect that the center excessive oxide layer of formation thickness of brushing surface causes semiconductor crystal wafer local excessively oxidated.
Description
Technical field
The present invention relates to semiconductor and form field, especially relate to a kind of brushing device and scrub methods of semiconductor crystal wafer.
Background technology
Along with the develop rapidly of integrated circuit (being called for short IC) manufacturing technology, the characteristic size (CD) of integrated circuit constantly reduces, and on a slice semiconductor crystal wafer, the quantity of semiconductor devices constantly increases.In order to meet the requirement of semiconductor devices increasing number, a slice semiconductor crystal wafer often comprises the semiconductor devices of sandwich construction, and the semiconductor devices of adjacent layer realizes electrical connection by metal interconnect structure, thus semiconductor devices quantity is increased on the chip of particular area, improve the integrated level of semiconductor devices.
In multilevel semiconductor device fabrication process, need to deposit different material layers on a semiconductor substrate, and by cmp (ChemicalMechanicalpolishing, etc. CMP) flatening process removes the material layer of segment thickness, while controlling each layer thickness, improve the surface smoothness of each material layer, and then improve the performance of semiconductor devices of follow-up formation.
And often scrub semiconductor crystal wafer by brush after cmp, the grinding formed at semiconductor wafer surface to remove CMP remains.
Shown in figure 1, existing technique of scrubbing semiconductor crystal wafer comprises:
A columniform brush 200 is placed on surface after semiconductor crystal wafer 100CMP, described brush 200 treats brushing surface across described semiconductor crystal wafer 100, and the projection on a semiconductor wafer of the axis of described brush 200 is through the pivot of semiconductor crystal wafer 100.When scrubbing, to the surperficial jet cleaning liquid of semiconductor crystal wafer 100, rotate semiconductor crystal wafer 100, described brush 200 presses down and applies certain pressure to semiconductor crystal wafer 100 surface, thus scrubs semiconductor crystal wafer 100 surface in all directions.
But, find in actual mechanical process, in the process of scrubbing, at the regional area of semiconductor crystal wafer, especially there will be serious oxidative phenomena near semiconductor crystal wafer centre.As shown in Figure 2, Fig. 2 is that same chip semiconductor wafer scrubs technique rear surface change schematic diagram different, and wherein, step S1, S2 to S3 semiconductor crystal wafer brushing time increases according to this.Especially at the core a1 place of semiconductor crystal wafer, increase with brushing time, the oxidized degree of semiconductor die circular center section serious all the more (in Fig. 2, color is lighter, oxidized more serious).
In classes of semiconductors device preparation technology, the oxidation difference of semiconductor wafer surface can cause various defective workmanship, shown in figure 3, as in memory preparation process, form polysilicon layer 12 between Semiconductor substrate 10 between adjacent side wall 11, and behind planarized described polysilicon layer 12 surface, rear etching technics (etchback) technique can be adopted, remove the polysilicon layer 12 of segment thickness, to form the source line structure (sourcepolyline) of ad hoc structure.If but after on polysilicon layer in the process of scrubbing 12, regional area forms the larger oxide layer 13 of thickness, based on etch rate and the polysilicon etch rate difference of oxide layer, there is size difference in the source line structure formed after making rear etching technics (etchback) technique, thus affects the memory performance of follow-up formation.
, how to reduce in the process of scrubbing for this reason, semiconductor crystal wafer treat that brushing surface local excessive oxidative phenomena is the problem that those skilled in the art need solution badly.
Summary of the invention
The problem that the present invention solves is to provide a kind of brushing device and scrub methods of semiconductor crystal wafer, scrubs in process to reduce semiconductor crystal wafer, the defect that local is excessively oxidated.
For solving the problem, the brushing device of a kind of semiconductor crystal wafer provided by the present invention, comprising:
Rack for cleaning, for placing semiconductor crystal wafer;
Rotating control assembly, controls semiconductor crystal wafer with the center of semiconductor crystal wafer for pivot rotates;
Cleaning brush, for scrubbing the surface to be cleaned of semiconductor crystal wafer, described cleaning brush contacts with the pivot of semiconductor crystal wafer, and the projection on a semiconductor wafer of the axis of described cleaning brush is positioned at the position of pivot described in non-through.
Alternatively, described cleaning brush is cylindric, and can around axial-rotation.
Alternatively, the two ends of cylindric cleaning brush extend to described in treat brushing surface edge outside.
Alternatively, described cleaning brush surface is provided with hole for water spraying, for spraying deionized water in the process of scrubbing semiconductor crystal wafer.
Alternatively, described semiconductor crystal wafer is disc, and described rotating control assembly comprises at least two runners;
Sidewall and the described semiconductor crystal wafer sidewall of described runner are tangent, and described at least two runner rotating in same directions are to drive described semiconductor crystal wafer around the central rotation of semiconductor crystal wafer.
Alternatively, described rotating control assembly comprises two runners;
The line of described two runners and the axis being parallel of described cleaning brush, and the line of described two runners and cleaning brush lay respectively at the both sides of described pivot.
Alternatively, described cleaning brush is cylindric, and described cleaning brush can around axial-rotation, and the frictional force that cleaning brush produces described semiconductor crystal wafer around axial-rotation is towards described runner.
Alternatively, the contact surface of described cleaning brush and semiconductor crystal wafer is strip, and the width of described strip is D2;
Described pivot is the relation that D1, D1 and D2 meet 0 < D1≤0.5D2 to the distance of described contact surface length-wise axis.
Alternatively, the contact surface of described cleaning brush and semiconductor crystal wafer is strip, and the width of described strip is D2;
Described pivot is that D1, D1 and D2 meet 0.25D2≤D1≤0.5D2 to the distance of described contact surface length-wise axis.
Present invention also offers a kind of scrub methods of semiconductor crystal wafer, comprising:
There is provided semiconductor crystal wafer, described semiconductor crystal wafer comprises treats brushing surface, and the center of described semiconductor crystal wafer is pivot;
Waiting to scrub and place cleaning brush on the surface at semiconductor crystal wafer, makes described cleaning brush and pivot phase-contact surface, and makes the projection on a semiconductor wafer of described cleaning brush axis be positioned at the position of pivot described in non-through;
Make semiconductor crystal wafer around pivot rotation, treat brushing surface with what scrubbed semiconductor crystal wafer by cleaning brush.
Compared with prior art, technical scheme of the present invention has the following advantages:
In the brushing device of semiconductor crystal wafer, the axis projection on a semiconductor wafer of cleaning brush is positioned at the position of pivot described in non-through, and cleaning brush contacts with the pivot of semiconductor crystal wafer.Scrub in semiconductor crystal wafer process at the brushing device of semiconductor crystal wafer, cleaning brush contacts with the pivot of semiconductor crystal wafer, can, in semiconductor crystal wafer cleaning process, avoid semiconductor crystal wafer center to be missed, scrub in process at semiconductor crystal wafer, the pressure of the axial location place applying semiconductor crystal wafer of cleaning brush is maximum, and the axial location of corresponding cleaning brush corresponding semiconductor wafer surface heat radiation difficulty maximum, the axis projection on a semiconductor wafer of cleaning brush, be positioned at the position of pivot described in non-through, the pivot of described semiconductor crystal wafer is made to be partial to the axis side of described cleaning brush, namely, avoid making the pivot of described semiconductor crystal wafer be positioned at the maximum position that is stressed all the time, improve the radiating rate of the pivot of semiconductor crystal wafer simultaneously, thus semiconductor crystal wafer pivot produces higher heat problem than other parts can be reduced, and then avoid treating at semiconductor crystal wafer the defect that the center excessive oxide layer of formation thickness of brushing surface causes semiconductor crystal wafer local excessively oxidated, then the preparation technology of Subsequent semiconductor device is improved, improve the performance of final obtained semiconductor devices.
Alternatively, described cleaning brush is cylindric, and scrubs in process at semiconductor crystal wafer, controls described cleaning brush around axial-rotation.Cleaning brush rotates the contact surface that constantly can change cleaning brush and semiconductor crystal wafer, one convenient rotation based on cleaning brush can improve the efficiency that semiconductor wafer surface impurity is scrubbed in removing, effectively can distribute on the other hand semiconductor crystal wafer and cleaning brush friction and the heat that produces, avoid too high temperature to make semiconductor crystal wafer by the problem of rapid oxidation.
Alternatively, the rotating control assembly driving wafer to rotate comprises two runners; The line of described two runners and the axis being parallel of described cleaning brush, and the line of described two runners and cleaning brush lay respectively at described pivot both sides; And wash in semiconductor crystal wafer process, described cleaning brush can around axial-rotation, and the frictional force that cleaning brush produces described semiconductor crystal wafer around axial-rotation is towards described runner.Technique scheme can improve described cleaning brush and wafer frictional force, to improve the dynamics of scrubbing; Make described cleaning brush provide wafer towards the power of runner simultaneously, realize semiconductor crystal wafer at runner to the balance on cleaning brush direction, thus improve the stability of wafer rotation.
Accompanying drawing explanation
The existing semiconductor crystal wafer of Fig. 1 scrubs the structural representation of technique;
Fig. 2 be adopt existing semiconductor crystal wafer scrub technique scrub after the Electronic Speculum figure of semiconductor crystal wafer;
Fig. 3 be adopt existing semiconductor crystal wafer scrub technique scrub after the structure chart of semiconductor device;
Fig. 4 to Fig. 6 is the structural representation of scrub methods one embodiment of semiconductor crystal wafer of the present invention;
Fig. 7 is the structural representation of another embodiment of scrub methods of semiconductor crystal wafer of the present invention;
Fig. 8 is the structural representation of the another embodiment of scrub methods of semiconductor crystal wafer of the present invention;
Fig. 9 is the Electronic Speculum figure comparison diagram of the semiconductor crystal wafer after scrub methods that existing semiconductor crystal wafer scrubs technique and semiconductor crystal wafer of the present invention is scrubbed.
Detailed description of the invention
As described in the background art, after semiconductor crystal wafer scrubs technique, more serious oxidative phenomena can be there is in semiconductor crystal wafer rotation center region, cause semiconductor crystal wafer regional area difference, thus adverse effect is caused to Subsequent semiconductor preparation technology.Analyze its reason, continue as shown in Figure 1:
Existingly scrub in technique, the projection of brush 200 axis on semiconductor crystal wafer 100 can through the pivot of semiconductor crystal wafer 100, and scrub semiconductor crystal wafer 100 surface in order and comprehensively along with semiconductor crystal wafer rotates.But in practical operation, the center of semiconductor crystal wafer 100 is positioned at the axis of brush all the time in the projection of wafer, and brush 200 applies pressure to semiconductor crystal wafer 100 surface all the time.And in practical operation, the pressure of the axial location place applying semiconductor crystal wafer 100 of brush 200 is maximum, the semiconductor wafer surface heat radiation difficulty that the axial location of brush 20 is corresponding is also maximum.For this reason exerting pressure, larger heat can be produced in semiconductor crystal wafer 100 center point area under rotation status, the oxidized speed of accelerated semiconductor wafer 100, thus, as shown in Figure 2, compared to other regions of semiconductor crystal wafer 100, the central area of semiconductor crystal wafer 100 is more easily oxidized and form oxide layer, and scrubs increase along with the time, the heat produced increases, and the central area degree of oxidation of semiconductor crystal wafer 100 increases progressively.
For this reason, the invention provides a kind of brushing device and scrub methods of semiconductor crystal wafer.The brushing device of semiconductor crystal wafer comprises: rack for cleaning, for placing semiconductor crystal wafer; Rotating control assembly, controls semiconductor crystal wafer with the center of semiconductor crystal wafer for pivot rotates; Cleaning brush, for scrubbing the surface to be cleaned of semiconductor crystal wafer, wherein, the axis projection on a semiconductor wafer of described cleaning brush is positioned at the position of pivot described in non-through, and during use, described cleaning brush contacts with the pivot of semiconductor crystal wafer.
Adopting the brushing device of described semiconductor crystal wafer to scrub in semiconductor crystal wafer process, cleaning brush contacts with the pivot of semiconductor crystal wafer, can, in semiconductor crystal wafer cleaning process, avoid semiconductor crystal wafer center to be missed, the axis projection on a semiconductor wafer of cleaning brush, be positioned at the position of pivot described in non-through, described semiconductor crystal wafer pivot is made to be partial to the side of described cleaning brush axis, to avoid making the pivot of described semiconductor crystal wafer be positioned at the maximum position of pressurized all the time, improve the radiating rate of the pivot of semiconductor crystal wafer simultaneously, thus reduction semiconductor crystal wafer is scrubbed in process, described semiconductor crystal wafer treats that the pivot of brushing surface produces the problem of higher heat than other parts, and then the pivot position of brushing surface is more easily oxidized to avoid semiconductor crystal wafer to treat, form the defect that the excessive oxide layer of thickness causes semiconductor crystal wafer local excessively oxidated, then the preparation technology of Subsequent semiconductor device is improved, improve the performance of final obtained semiconductor devices.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, below in conjunction with accompanying drawing, with the formation method of metal interconnect structure for embodiment is described in detail specific embodiments of the invention.
Fig. 4 and Fig. 6 is the structural representation that semiconductor crystal wafer brushing device of the present invention scrubs semiconductor die bowlder one embodiment.Wherein, Fig. 6 is the side structure schematic diagram that in Fig. 4, semiconductor crystal wafer brushing device scrubs semiconductor die bowlder.
The brushing device of the semiconductor crystal wafer that the present embodiment provides comprises:
Rack for cleaning (not shown), for placing semiconductor crystal wafer;
Rotating control assembly, for controlling semiconductor crystal wafer with the center of semiconductor crystal wafer for pivot rotates;
Cleaning brush 400, for scrubbing the surface to be cleaned of semiconductor crystal wafer.Described cleaning brush contacts with the pivot of semiconductor crystal wafer, and the projection on a semiconductor wafer of the axis of described cleaning brush 400 is positioned at the position of pivot described in non-through.
During use, the surface of described cleaning brush 400 is fitted in the surface of described semiconductor crystal wafer 300.The contact surface 700 of strip is formed between described semiconductor crystal wafer 300 and cleaning brush 400.
In the present embodiment, the axis (namely the axis of described cleaning brush 400 is positioned at the axis that described semiconductor crystal wafer projects) of described contact surface 700 is positioned at the position of pivot described in non-through, namely the axis of described contact surface 700 is partial to the side in the center of circle (that is, the pivot of semiconductor crystal wafer) of described semiconductor crystal wafer 300.
In the present embodiment, the width of the contact surface 700 of described strip is D2, the center of circle O of described semiconductor crystal wafer 300 and describedly treat that the distance of the axis of the contact surface 700 of brushing surface 310 is D1, D1≤0.5D2.Thus make cleaning brush 400 treat with described the center of circle O that the contact surface 700 of brushing surface 310 covers described semiconductor crystal wafer 300, and the axis of the contact surface 700 of described cleaning brush 400 and semiconductor crystal wafer 300 is without the center of circle O of described semiconductor crystal wafer 300.
Further alternatively, the position relationship of the center of circle of described semiconductor crystal wafer 300 and the axis of described cleaning brush 400 is 0.25D2≤D1≤0.5D2.In this distance range, both can guarantee to scrub the effect treating brushing surface 310, and reduce simultaneously and cause the excessively oxidated defect of semiconductor crystal wafer 300 circle centre position.
Alternatively, in the present embodiment, described cleaning brush 400 is cylindric, and can around axial-rotation, and that improves semiconductor crystal wafer 300 scrubs efficiency.
In addition, cleaning brush 400 rotates the surface contacted that constantly can change cleaning brush 400 and semiconductor crystal wafer 300, effectively can distribute semiconductor crystal wafer 300 to rub with cleaning brush 400 and the heat that produces, avoid too high temperature to make semiconductor crystal wafer 300 by the problem of rapid oxidation.
Further alternatively, described cleaning brush 400 surface is provided with hole for water spraying (not shown).In the process of scrubbing semiconductor crystal wafer 300, for spraying deionized water, to accelerate semiconductor crystal wafer 300 surface radiating.
Alternatively, the size of described cleaning brush 400 is greater than the size of described semiconductor crystal wafer 300, and the two ends of described cleaning brush 400 extend to described outer side surface to be cleaned.
Noticeable thing, in other embodiments except the present embodiment, described cleaning brush 400 also can be only has the brush that a planar structure scrubs face, scrubs in semiconductor crystal wafer process, described in scrub face be attached to described semiconductor crystal wafer 300 wait scrub on the surface.
In the present embodiment, described rotating control assembly comprises two runners 510 and 520 be arranged on described rack for cleaning.
With reference to figure 4, existing semiconductor crystal wafer mostly is disc, during use, the sidewall of described runner 510 and 520 and the sidewall of described semiconductor crystal wafer 300 tangent, described runner 510 and 520 rotating Vortex (being clockwise or counterclockwise), thus drive described semiconductor crystal wafer 300 to rotate.
Alternatively, the line between described runner 510 and 520 is parallel with the axis of cylindric described cleaning brush 400, and the line of described two runners 510 and 520 and described cleaning brush 400 lay respectively at the both sides of described pivot O.Technique scheme makes runner 510 (520) and cleaning brush apply power, effectively to improve stability when semiconductor crystal wafer 300 rotates in the relative both sides of described semiconductor crystal wafer 300 pivot respectively.
Further alternatively, described cleaning brush 400 can around axial-rotation, and the frictional force that axial-rotation produces described semiconductor crystal wafer 300 is towards described runner 510 and 520, concrete, with reference to figure 5, described semiconductor crystal wafer 300 clockwise around A to rotation, described cleaning brush 400 is along B to rotation, in described cleaning brush 400 rotation process, produce and have cleaning brush 400 towards the frictional force F1 in described runner 510 and 520 direction, thus improve described cleaning brush 400 and wafer 300 frictional force, and then dynamics is scrubbed in raising; Make described cleaning brush 400 provide wafer towards the power of runner 510 and 520 simultaneously, and runner 510 and 520 applies wafer one power contrary with F1, realize wafer 300 at runner 510 (with 520) to the balance on cleaning brush 400 direction, thus improve the stability of wafer rotation.
Correspondingly, the present invention also provides a kind of scrub methods of semiconductor crystal wafer.Composition graphs 4 to Fig. 6 again below, specifically sets forth technical scheme of the present invention with an embodiment.
The present embodiment semiconductor crystal wafer scrub methods comprises:
There is provided semiconductor crystal wafer 300, described semiconductor crystal wafer 300 can around the central rotation of semiconductor crystal wafer 300.
Described semiconductor crystal wafer 300 comprises semiconductor base, or semiconductor base and be arranged in described semiconductor base as semiconductor components and devices such as transistors.
In the present embodiment; described semiconductor base is silicon base; but in other embodiments; described semiconductor base also can be germanium, germanium silicon, the GaAs based end or silicon-on-insulator substrate; common semiconductor base all can be used as the semiconductor base in the present embodiment, and described semiconductor base materials and structure do not limit protection scope of the present invention.
In the present embodiment, described semiconductor crystal wafer 300 is disc, comprise and treat brushing surface 310, treat with described the back side (not shown) that brushing surface 310 position is relative, and at the described sidewall for loop configuration treated between brushing surface 310 and the back side; Describedly treat that brushing surface 310 is for disc.
In other embodiments except the present embodiment, described semiconductor crystal wafer 300 can also be rectangle, regular polygon, and other any regular or do not advise side shape, and the structure of described semiconductor crystal wafer 300 does not limit protection scope of the present invention.
After providing semiconductor crystal wafer, described method also comprises described semiconductor crystal wafer 300 and is placed on rack for cleaning, exposes and treats brushing surface.
Described rack for cleaning comprises rotating control assembly, thus controls described semiconductor crystal wafer 300 and rotate around pivot, to improve cleaning efficiency.Continue with reference to figure 4, in the present embodiment, described rotating control assembly comprises runner 510 and 520.In the present embodiment, the sidewall of described runner 510 and 520 and the sidewall of discoidal semiconductor crystal wafer 300 tangent, described runner 510 and 520 rotating Vortex (being clockwise or counterclockwise), thus drive described semiconductor crystal wafer 300 to rotate, in addition, sidewall and the described semiconductor crystal wafer 300 of described runner 510 and 520 rub, and can play the effect of cleaning described semiconductor crystal wafer 300 sidewall.
What described cleaning brush 400 is placed in described semiconductor crystal wafer 300 treats above brushing surface 310, and treats that brushing surface 310 contacts with described, with when described semiconductor crystal wafer 300 rotates, treats brushing surface 310 different parts described in scrubbing.
Wherein, the axis projection on a semiconductor wafer of described cleaning brush 400 is positioned at the position of pivot described in non-through, namely, described cleaning brush 400 with treat that the contact surface of brushing surface 310 covers the described center of circle, and the side in the center of circle (that is, the pivot of semiconductor crystal wafer) of described semiconductor crystal wafer is partial in the position of described cleaning brush 400.
Shown in reference Figure 4 and 5, in the present embodiment, described cleaning brush 400 is cylindric.What described cleaning brush 400 was placed on described semiconductor crystal wafer 300 treats on brushing surface 310, treats that brushing surface 310 applies suitable pressure to described simultaneously.
In the present embodiment, with described, described cleaning brush 400 treats that the contact surface 700 of brushing surface 310 is string configuration.In the present embodiment, the width of the contact surface 700 of described strip is D2, the axis of described cleaning brush 400 is D1, D1≤0.5D2 in the projection (i.e. described contact surface 700 axis along its length) of described semiconductor crystal wafer 300 and the distance of the center of circle O of described semiconductor crystal wafer 300.Thus make cleaning brush 400 treat with described the center of circle O that the contact surface 700 of brushing surface 310 covers described semiconductor crystal wafer 300, and the axis of the contact surface 700 of described cleaning brush 400 and semiconductor crystal wafer 300 is without the center of circle O of described semiconductor crystal wafer 300.
Described cleaning brush 400 with treat that the contact surface 700 of brushing surface 310 covers the center of circle O of semiconductor crystal wafer 300, with in semiconductor crystal wafer 300 rotary course, guaranteeing that the centre of semiconductor crystal wafer 300 is scrubbed in contacting with cleaning brush 400, improving the washing effect treating brushing surface 310.
To described after brushing surface 310 applies suitable pressure, the pressure that semiconductor crystal wafer 300 corresponding to described cleaning brush 300 axial location is subject to is maximum, and be positioned at the center position of described contact surface 700 based on axis, the semiconductor crystal wafer 300 that described cleaning brush 300 axial location is corresponding treat that the thermal diffusivity of brushing surface 310 is the poorest.In the present embodiment, the center of circle O of described semiconductor crystal wafer 300 is positioned at the side of the axis of cleaning brush 300, namely, avoid making the pivot of described semiconductor crystal wafer be positioned at the maximum position of pressurized all the time, avoid treating that the O place, the center of circle of brushing surface 310 is in the Frotteurism of maximal pressure all the time, improve the radiating rate at the O place, the center of circle of semiconductor crystal wafer 300 simultaneously, thus alleviate the heat produced at the center place of wafer 300 in described wafer 300 rotary course, what reduce semiconductor crystal wafer 300 treats brushing surface 310 center compared to the problem treating other positions of brushing surface 310 and produce higher heat, and then avoid being formed in the center for the treatment of brushing surface 310 of semiconductor crystal wafer 300 defect that thickness excessive oxide layer causes semiconductor crystal wafer local excessively oxidated.
Further alternatively, the position relationship of the center of circle of described semiconductor crystal wafer 300 and the axis of described cleaning brush 400 is 0.25 × D2≤D1≤0.5 × D2.In this distance range, both can guarantee to scrub the effect treating brushing surface 310, and reduce simultaneously and cause the excessively oxidated defect of semiconductor crystal wafer 300 circle centre position.
In the present embodiment, along described cleaning brush 400 Axis Extension direction, described cleaning brush 400 two ends extend to the outside for the treatment of brushing surface 310 of described semiconductor crystal wafer 300, thus guarantee in semiconductor crystal wafer 300 rotary course, described cleaning brush 300 can scrub described in treat each position of brushing surface 310.
In the present embodiment, rotate simultaneously at described semiconductor crystal wafer 300, treat brushing surface 310 jet cleaning liquid 600, to improve the efficiency of cleaning described semiconductor crystal wafer 300 to described semiconductor crystal wafer 300.
In the present embodiment, rotate simultaneously at described semiconductor crystal wafer 300, described cleaning brush 400 is around axial-rotation.Thus when scrubbing semiconductor crystal wafer 300, constantly changing cleaning brush 400 and the contact surface 700 of semiconductor crystal wafer 300, the impurity treated on brushing surface 310 of semiconductor crystal wafer 300 can be removed on the one hand, improve semiconductor crystal wafer 300 cleaning efficiency; The heat that the long-time and semiconductor crystal wafer 300 in the same position of cleaning brush 400 rubs and produces can be alleviated on the other hand, treat the oxidized degree of brushing surface 310 with what reduce semiconductor crystal wafer 300.
Alternatively, in the present embodiment, the surface of described cleaning brush 400 is provided with hole for water spraying (not shown), in the process of cleaning semiconductor crystal wafer 300, described hole for water spraying is for spraying deionized water, at cleaning semiconductor crystal wafer 300 simultaneously, accelerate semiconductor crystal wafer 300 and cleaning brush 400 cools, reduce cleaning brush 400 and treat that the contact surface of brushing surface 310 is rapidly heated and causes and treat the oxidized degree of brushing surface 310 with described.In addition, technique scheme also can be alleviated described cleaning brush 400 and to rub the extent of damage based on semiconductor crystal wafer 300.
Continue with reference to figure 1, in the present embodiment, be arranged at the runner 510 and 520 of described semiconductor crystal wafer 300 both sides not only for driving described semiconductor crystal wafer 300 to rotate, and clean the sidewall of described semiconductor crystal wafer 300, and by regulating the distance between described two runners 510 and 520, to regulate the distance between the center of circle O of described semiconductor crystal wafer 300 and the axis of described cleaning brush 400.
Alternatively, the axis being parallel of the line between described runner 510 and 520 and cylindric described cleaning brush 400, and the line of the axis of described cleaning brush 400 and described two runners 510 and 520 lays respectively at the both sides of described pivot O.Can make like this to apply power in the relative both sides of described semiconductor crystal wafer 300 pivot, thus effectively improve stability when semiconductor crystal wafer 300 rotates.
Shown in figure 7, in another embodiment of the invention, another cleaning brush 410 can be set equally at the back side of described semiconductor crystal wafer 300, in cleaning semiconductor crystal wafer 300 process, while this another cleaning brush 410 effectively can clean the back side of described semiconductor crystal wafer 300, play support semiconductor wafer 300.Alternatively, this another cleaning brush 410 be positioned at treating that cleaning brush 400 position on brushing surface 310 is corresponding and arranging of semiconductor crystal wafer 300, namely described cleaning brush 400 and 410 with described semiconductor crystal wafer 300 for minute surface is specular.
Alternatively, the rotating speed of described cleaning brush 410 is close with described cleaning brush 400, and the frictional force that described cleaning brush 410 axial-rotation produces described semiconductor crystal wafer 300 is towards described runner 510 and 520.Concrete, with reference to figure 7, described semiconductor crystal wafer 300 clockwise around A to rotation, described cleaning brush 410 along C to rotation, and then improves the stability of described semiconductor crystal wafer 300 rotation.But the present invention is not construed as limiting for the structure of another cleaning brush 410 described.
In embodiment shown in Fig. 4 to Fig. 6, described rotating control assembly only comprises two runners, but in other embodiments, described rotating control assembly can comprise and be more than or equal to 3 described runners, each runner is arranged on described wafer 300 periphery, and each runner sidewall and wafer 300 tangent, thus control described wafer 300 and rotate.If Fig. 8 is in the structural representation of another embodiment of the present invention, be provided with 3 runners 530,540 and 550 in all sides of described semiconductor crystal wafer 300.The quantity increasing runner effectively can improve the stability of semiconductor crystal wafer rotation.
With reference to the Electronic Speculum figure that figure 9, Fig. 9 is the semiconductor crystal wafer after scrub methods that existing semiconductor crystal wafer scrubs technique and semiconductor crystal wafer of the present invention is scrubbed.Wherein, what the top Electronic Speculum figure showed is just ground through CMP, and without the semiconductor wafer surface structure of scrubbing, second Electronic Speculum figure show be through existingly scrubbing the semiconductor wafer surface structure after technique, the 3rd Electronic Speculum figure and a 4th Electronic Speculum figure shows be adopt the technique of the scrub methods embodiment 1 of semiconductor crystal wafer of the present invention to scrub after semiconductor wafer surface structure, wherein, in 3rd Electronic Speculum figure, D1=0.4 × D2, in the 4th Electronic Speculum figure, D1=0.1 × D2.Wherein, D2 is the width of the contact surface 700 of cleaning brush and semiconductor crystal wafer, and D1 is the distance that the axis of described cleaning brush is projected to the pivot of described semiconductor crystal wafer on described semiconductor crystal wafer.
Wherein, in the Electronic Speculum figure of the top, the color treating brushing surface 310 of described semiconductor crystal wafer 300 is the darkest, and wherein 700 for treating brushing surface 310 centre, treat brushing surface 310 remain CMP after impurity; Contrast Electronic Speculum figure below, known after scrubbing technique, effectively remove the impurity of semiconductor wafer surface, and treat that brushing surface 310 is slightly oxidized in the process of scrubbing, thus treat that brushing surface 310 shoals; But shown in second Electronic Speculum figure (D1=0), treat that the centre 730 of brushing surface 310 is compared with peripheral part, color whiting obviously, illustrates that centre is with seriously oxidized.And compared with second Electronic Speculum figure (D1=0), the centre 710 of brushing surface 310 is treated in 3rd Electronic Speculum figure (D1=0.4D2), treat that the color in the centre 720 of brushing surface 310 is darker with in the 4th Electronic Speculum figure (D1=0.1D2), oxidized degree is lower, illustrate and adopt the scrub methods of semiconductor crystal wafer of the present invention at effective removal of contamination simultaneously, can suppress to treat that brushing surface 310 centre is by severe oxidation.
Contrast the 3rd Electronic Speculum figure (D1=0.4D2) and the 4th Electronic Speculum figure (D1=0.1D2) again, the color in the centre 710 in the 3rd Electronic Speculum figure (D1=0.4D2) is darker than the color in the centre 720 in Fig. 9 d, close to the centre 700 of the semiconductor crystal wafer do not scrubbed, what the semiconductor crystal wafer 300 in the 3rd Electronic Speculum figure (D1=0.4D2) was described treats that the centre degree of oxidation of brushing surface 310 is minimum, the technical scheme of the scrub methods of the semiconductor crystal wafer of the 3rd Electronic Speculum figure (D1=0.4D2) correspondence, can contribute to suppression better scrubs in semiconductor crystal wafer process, semiconductor crystal wafer treats that brushing surface 310 centre is oxidized.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (10)
1. a brushing device for semiconductor crystal wafer, comprising:
Rack for cleaning, for placing semiconductor crystal wafer;
Rotating control assembly, controls semiconductor crystal wafer with the center of semiconductor crystal wafer for pivot rotates;
Cleaning brush, for scrubbing the surface to be cleaned of semiconductor crystal wafer, is characterized in that,
Described cleaning brush contacts with the pivot of semiconductor crystal wafer, and the projection on a semiconductor wafer of the axis of described cleaning brush is positioned at the position of pivot described in non-through.
2. the brushing device of semiconductor crystal wafer as claimed in claim 1, is characterized in that, described cleaning brush is cylindric, and can around axial-rotation.
3. the brushing device of semiconductor crystal wafer as claimed in claim 2, it is characterized in that, the two ends of cylindric cleaning brush extend to outside the edge on described surface to be cleaned.
4. the brushing device of semiconductor crystal wafer as claimed in claim 1, it is characterized in that, described cleaning brush surface is provided with hole for water spraying, for spraying deionized water in the process of scrubbing semiconductor crystal wafer.
5. the brushing device of semiconductor crystal wafer as claimed in claim 1, it is characterized in that, described semiconductor crystal wafer is disc, and described rotating control assembly comprises at least two runners;
Sidewall and the described semiconductor crystal wafer sidewall of described runner are tangent, and described at least two runner rotating in same directions are to drive described semiconductor crystal wafer around the central rotation of semiconductor crystal wafer.
6. the brushing device of semiconductor crystal wafer as claimed in claim 5, it is characterized in that, described rotating control assembly comprises two runners;
The line of described two runners and the axis being parallel of described cleaning brush, and the line of described two runners and cleaning brush lay respectively at the both sides of described pivot.
7. the brushing device of semiconductor crystal wafer as claimed in claim 6, is characterized in that, described cleaning brush be cylindrical shape, and described cleaning brush can around axial-rotation, and the frictional force that cleaning brush produces described semiconductor crystal wafer around axial-rotation is towards described runner.
8. the brushing device of semiconductor crystal wafer as claimed in claim 1, it is characterized in that, the contact surface of described cleaning brush and semiconductor crystal wafer is strip, and the width of described strip is D2;
Described pivot is the relation that D1, D1 and D2 meet 0 < D1≤0.5D2 to the distance of described contact surface length-wise axis.
9. the brushing device of semiconductor crystal wafer as claimed in claim 1, it is characterized in that, the contact surface of described cleaning brush and semiconductor crystal wafer is strip, and the width of described strip is D2;
Described pivot is that D1, D1 and D2 meet 0.25D2≤D1≤0.5D2 to the distance of described contact surface length-wise axis.
10. a scrub methods for semiconductor crystal wafer, is characterized in that, comprising:
There is provided semiconductor crystal wafer, described semiconductor crystal wafer comprises surface to be cleaned, and the center of described semiconductor crystal wafer is pivot;
Cleaning brush is placed on the surface to be cleaned of semiconductor crystal wafer, described cleaning brush is contacted with pivot, and make the projection on a semiconductor wafer of described cleaning brush axis be positioned at the position of pivot described in non-through;
Make semiconductor crystal wafer around pivot rotation, to be scrubbed the surface to be cleaned of semiconductor crystal wafer by cleaning brush.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410352938.XA CN104174601B (en) | 2014-07-23 | 2014-07-23 | The brushing device of semiconductor crystal wafer and scrub methods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410352938.XA CN104174601B (en) | 2014-07-23 | 2014-07-23 | The brushing device of semiconductor crystal wafer and scrub methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104174601A CN104174601A (en) | 2014-12-03 |
| CN104174601B true CN104174601B (en) | 2016-03-09 |
Family
ID=51956106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410352938.XA Active CN104174601B (en) | 2014-07-23 | 2014-07-23 | The brushing device of semiconductor crystal wafer and scrub methods |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104174601B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109461675B (en) * | 2018-10-18 | 2020-10-16 | 上海华虹宏力半导体制造有限公司 | Cleaning equipment for detecting position abnormality of silicon wafer and cleaning method thereof |
| CN109731814A (en) * | 2018-12-27 | 2019-05-10 | 中国电子科技集团公司第二研究所 | The wafer brushing device adjusted into brush position can dynamically be controlled |
| CN109731813A (en) * | 2018-12-27 | 2019-05-10 | 中国电子科技集团公司第二研究所 | The wafer scrub methods adjusted into brush position can dynamically be controlled |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0878831A2 (en) * | 1997-05-15 | 1998-11-18 | Kabushiki Kaisha Toshiba | Double side cleaning apparatus for semiconductor substrate |
| CN1874854A (en) * | 2003-10-28 | 2006-12-06 | 应用材料公司 | Scrubber box and methods for using the same |
| CN101180711A (en) * | 2005-04-11 | 2008-05-14 | 斗山Mecatec株式会社 | Semiconductor chip cleaning system |
| CN201898118U (en) * | 2010-12-06 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning device |
| CN102479669A (en) * | 2010-11-29 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Wafer brush cleaning device and wafer brush cleaning method |
| CN102773240A (en) * | 2011-05-10 | 2012-11-14 | 南亚科技股份有限公司 | Post-CMP wafer cleaning apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002353183A (en) * | 2001-05-28 | 2002-12-06 | Nisso Engineering Co Ltd | Wafer-cleaning device |
-
2014
- 2014-07-23 CN CN201410352938.XA patent/CN104174601B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0878831A2 (en) * | 1997-05-15 | 1998-11-18 | Kabushiki Kaisha Toshiba | Double side cleaning apparatus for semiconductor substrate |
| CN1874854A (en) * | 2003-10-28 | 2006-12-06 | 应用材料公司 | Scrubber box and methods for using the same |
| CN101180711A (en) * | 2005-04-11 | 2008-05-14 | 斗山Mecatec株式会社 | Semiconductor chip cleaning system |
| CN102479669A (en) * | 2010-11-29 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Wafer brush cleaning device and wafer brush cleaning method |
| CN201898118U (en) * | 2010-12-06 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning device |
| CN102773240A (en) * | 2011-05-10 | 2012-11-14 | 南亚科技股份有限公司 | Post-CMP wafer cleaning apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104174601A (en) | 2014-12-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104174601B (en) | The brushing device of semiconductor crystal wafer and scrub methods | |
| CN106783538B (en) | Water mark and particle eliminating method applied to single-chip cleaning process | |
| JP5535687B2 (en) | Substrate cleaning method and substrate cleaning apparatus | |
| Kim et al. | Study of the cross contamination effect on post CMP in situ cleaning process | |
| US8851959B2 (en) | Chemical mechanical polishing device and polishing element | |
| JP2008311481A (en) | Substrate cleaning method, substrate cleaning device, and semiconductor manufacturing method | |
| CN209125576U (en) | Lapping liquid supplies arm and chemical mechanical polishing device | |
| CN104241131B (en) | The forming method of metal gate transistor | |
| TWI816544B (en) | Grinding stage, grinding device, grinding method and silicon wafer | |
| TW201906689A (en) | Roller member, pencil member, and substrate processing apparatus including at least either of the foregoing | |
| CN105364699B (en) | Chemical mechanical polishing method and chemical mechanical polishing equipment | |
| CN110957208A (en) | Wafer edge washing method and wafer washing device | |
| US8846535B2 (en) | Method of fabricating a semiconductor device | |
| JP2001358110A (en) | Scrub-cleaning device and manufacturing method for semiconductor device using the same | |
| CN203887682U (en) | Grinding head and grinding device | |
| JP3558624B2 (en) | Method for manufacturing semiconductor device | |
| KR101584427B1 (en) | Brush unit for cleaning wafer | |
| CN102463522B (en) | Chemical mechanical polishing method of aluminum | |
| JP2006332386A (en) | Device and method for washing substrate | |
| CN111863592A (en) | Post-polish cleaning method and method for forming semiconductor structure | |
| Kim et al. | Challenges in Post CMP in-situ cleaning for sub-14nm device yield enhancement | |
| US20220097199A1 (en) | Method and device of chemical mechanical polishing | |
| TWI832637B (en) | Wafer cleaning methods and equipment | |
| CN109037025A (en) | Semiconductor structure and forming method thereof | |
| CN102528638A (en) | Chemical-mechanical grinding method and equipment for copper |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |