CN104174601A - Device and method for scrubbing semiconductor wafer - Google Patents
Device and method for scrubbing semiconductor wafer Download PDFInfo
- Publication number
- CN104174601A CN104174601A CN201410352938.XA CN201410352938A CN104174601A CN 104174601 A CN104174601 A CN 104174601A CN 201410352938 A CN201410352938 A CN 201410352938A CN 104174601 A CN104174601 A CN 104174601A
- Authority
- CN
- China
- Prior art keywords
- semiconductor crystal
- crystal wafer
- cleaning brush
- pivot
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 322
- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000005201 scrubbing Methods 0.000 title claims abstract description 47
- 238000004140 cleaning Methods 0.000 claims abstract description 151
- 239000013078 crystal Substances 0.000 claims description 266
- 230000001680 brushing effect Effects 0.000 claims description 21
- 238000005507 spraying Methods 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 230000007547 defect Effects 0.000 abstract description 7
- 230000003647 oxidation Effects 0.000 abstract description 6
- 238000007254 oxidation reaction Methods 0.000 abstract description 6
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 260
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 230000001276 controlling effect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 206010017389 Frotteurism Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000276489 Merlangius merlangus Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 230000007334 memory performance Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- B08B1/32—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
Abstract
The invention provides a device and a method for scrubbing a semiconductor wafer. According to the device for scrubbing the semiconductor wafer, a cleaning brush is contacted with a rotating center of the semiconductor wafer, and the projection of an axis of the cleaning brush on the semiconductor wafer is located in the position where the rotating center is not penetrated through. The cleaning brush is contacted with the rotating center of the semiconductor wafer, so that the center of the semiconductor wafer can be prevented from being left out during the cleaning process of the semiconductor wafer; the projection of the axis of the cleaning brush on the semiconductor wafer is located in the position where the rotating center is not penetrated through, accordingly, the rotating center of the semiconductor wafer is prevented from being located in the maximum stressed position all along, and the heat dissipation speed of the rotating center of the semiconductor wafer is increased simultaneously, so that the problem that the rotating center of the semiconductor wafer produces more heat than other parts can be solved, and the defect that the semiconductor wafer is locally and excessively oxidized due to excessive thick oxidation layer formed in the center of a to-be-scrubbed surface of the semiconductor wafer is overcome.
Description
Technical field
The present invention relates to semiconductor and form field, especially relate to a kind of brushing device of semiconductor crystal wafer and scrub method.
Background technology
Along with the develop rapidly of integrated circuit (being called for short IC) manufacturing technology, the characteristic size of integrated circuit (CD) constantly reduces, and on a slice semiconductor crystal wafer, the quantity of semiconductor devices constantly increases.The requirement increasing in order to meet semiconductor devices quantity, on a slice semiconductor crystal wafer, often comprise the semiconductor devices of sandwich construction, and the semiconductor devices of adjacent layer is realized electrical connection by metal interconnect structure, thereby on the chip of particular area, increase semiconductor devices quantity, improve the integrated level of semiconductor devices.
In multilevel semiconductor device preparation process, need in Semiconductor substrate, deposit different material layers, and by cmp (Chemical Mechanical polishing, CMP) etc. flatening process is removed the material layer of segment thickness, when controlling each material layer thickness, improve the surface smoothness of each material layer, and then improve the performance of the semiconductor devices of follow-up formation.
And, after CMP, tend to scrub semiconductor crystal wafer by brush, residual in the grinding of semiconductor wafer surface formation to remove CMP.
Shown in figure 1, existing technique of scrubbing semiconductor crystal wafer comprises:
On surface after semiconductor crystal wafer 100CMP, place a columniform brush 200, described brush 200 is across described semiconductor crystal wafer 100 surface to be scrubbed, and the projection of the axis of described brush 200 on semiconductor crystal wafer is through the pivot of semiconductor crystal wafer 100.While scrubbing, to semiconductor crystal wafer 100 jet surface cleaning fluids, rotate semiconductor crystal wafer 100, described brush 200 presses down to semiconductor crystal wafer 100 surfaces and applies certain pressure, thereby scrubs in all directions semiconductor crystal wafer 100 surfaces.
Yet, in actual mechanical process, find, in the process of scrubbing, at the regional area of semiconductor crystal wafer, especially near semiconductor crystal wafer centre, there will be serious oxidative phenomena.As shown in Figure 2, Fig. 2 is that same chip semiconductor wafer changes schematic diagram in the different technique rear surfaces of scrubbing, and wherein, step S1, S2 to the S3 semiconductor crystal wafer time of scrubbing increases according to this.Especially at the core a1 place of semiconductor crystal wafer, with scrubbing time increase, the oxidized degree of semiconductor die circular center section is serious (in Fig. 2, color is lighter, oxidized more serious) all the more.
In classes of semiconductors device preparation technology, the oxidation difference of semiconductor wafer surface can cause various defective workmanships, shown in figure 3, as in memory preparation process, between the Semiconductor substrate 10 between adjacent side wall 11, form polysilicon layer 12, and described in planarization behind polysilicon layer 12 surfaces, can adopt rear etching technics (etch back) technique, remove the polysilicon layer 12 of segment thickness, to form the source line structure (source poly line) of ad hoc structure.If but after the oxide layer 13 that on polysilicon layer 12, regional area formation thickness is larger in the process of scrubbing, etch rate based on oxide layer and etching polysilicon speed difference, make the source line structure forming after rear etching technics (etch back) technique occur size difference, thereby affect the memory performance of follow-up formation.
, how to reduce in the process of scrubbing, the surface local over oxidation phenomenon to be scrubbed of semiconductor crystal wafer is the problem that those skilled in the art need solution badly for this reason.
Summary of the invention
The problem that the present invention solves is to provide a kind of brushing device of semiconductor crystal wafer and scrubs method, to reduce semiconductor crystal wafer, scrubs in process, local excessively oxidated defect.
For addressing the above problem, the brushing device of a kind of semiconductor crystal wafer provided by the present invention, comprising:
Rack for cleaning, for placing semiconductor crystal wafer;
Rotating control assembly, controlling semiconductor crystal wafer, to take the center of semiconductor crystal wafer be pivot rotation;
Cleaning brush, for scrubbing the surface to be cleaned of semiconductor crystal wafer, described cleaning brush contacts with the pivot of semiconductor crystal wafer, and the projection of the axis of described cleaning brush on semiconductor crystal wafer is positioned at the non-position of running through described pivot.
Alternatively, described cleaning brush is cylindric, and can be around axial-rotation.
Alternatively, the two ends of cylindric cleaning brush wait to scrub surperficial outside, edge described in extending to.
Alternatively, described cleaning brush surface is provided with hole for water spraying, for spraying deionized water in the process of scrubbing semiconductor crystal wafer.
Alternatively, described semiconductor crystal wafer is disc, and described rotating control assembly comprises at least two runners;
The sidewall of described runner and described semiconductor crystal wafer sidewall are tangent, and described at least two runner rotating in same directions are to drive described semiconductor crystal wafer around the central rotation of semiconductor crystal wafer.
Alternatively, described rotating control assembly comprises two runners;
The line of described two runners is parallel with the axis of described cleaning brush, and the line of described two runners and cleaning brush lay respectively at the both sides of described pivot.
Alternatively, described cleaning brush is cylindric, and described cleaning brush can be around axial-rotation, and the frictional force that cleaning brush produces described semiconductor crystal wafer around axial-rotation is towards described runner.
Alternatively, the contact-making surface of described cleaning brush and semiconductor crystal wafer is strip, and the width of described strip is D2;
Described pivot is D1 to the distance of described contact-making surface length-wise axis, and D1 and D2 meet the relation of 0 < D1≤0.5D2.
Alternatively, the contact-making surface of described cleaning brush and semiconductor crystal wafer is strip, and the width of described strip is D2;
Described pivot is D1 to the distance of described contact-making surface length-wise axis, and D1 and D2 meet 0.25D2≤D1≤0.5D2.
The present invention also provides a kind of method of scrubbing of semiconductor crystal wafer, comprising:
Semiconductor crystal wafer is provided, and described semiconductor crystal wafer comprises surface to be scrubbed, and the center of described semiconductor crystal wafer is pivot;
On the surface to be scrubbed of semiconductor crystal wafer, place cleaning brush, make described cleaning brush and pivot phase-contact surface, and make the projection of described cleaning brush axis on semiconductor crystal wafer be positioned at the non-position of running through described pivot;
Make semiconductor crystal wafer around pivot rotation, to scrub the surface to be scrubbed of semiconductor crystal wafer by cleaning brush.
Compared with prior art, technical scheme of the present invention has the following advantages:
In the brushing device of semiconductor crystal wafer, the projection of the axis of cleaning brush on semiconductor crystal wafer is positioned at the non-position of running through described pivot, and cleaning brush contacts with the pivot of semiconductor crystal wafer.At the brushing device of semiconductor crystal wafer, scrub in semiconductor crystal wafer process, cleaning brush contacts with the pivot of semiconductor crystal wafer, can, in semiconductor crystal wafer cleaning process, avoid semiconductor crystal wafer center to be missed, at semiconductor crystal wafer, scrub in process, the axial location place of cleaning brush applies the pressure maximum of semiconductor crystal wafer, and the semiconductor wafer surface heat radiation difficulty maximum that the axial location of corresponding cleaning brush is corresponding, the projection of the axis of cleaning brush on semiconductor crystal wafer, be positioned at the non-position of running through described pivot, make the pivot of described semiconductor crystal wafer be partial to axis one side of described cleaning brush, , avoid making the pivot of described semiconductor crystal wafer to be positioned at all the time the maximum position that is stressed, improve the radiating rate of the pivot of semiconductor crystal wafer simultaneously, thereby can reduce semiconductor crystal wafer pivot and than other parts, produce the problem of higher heat, and then avoid waiting to scrub the surperficial center excessive oxide layer of formation thickness at semiconductor crystal wafer and cause the local excessively oxidated defect of semiconductor crystal wafer, then improve the preparation technology of follow-up semiconductor devices, improve the performance of the semiconductor devices finally making.
Alternatively, described cleaning brush is cylindric, and scrubs in process at semiconductor crystal wafer, controls described cleaning brush around axial-rotation.Cleaning brush rotation can constantly change the contact-making surface of cleaning brush and semiconductor crystal wafer, one conveniently rotates and can improve the efficiency that semiconductor wafer surface impurity is scrubbed in removing based on cleaning brush, the heat that can effectively distribute semiconductor crystal wafer and cleaning brush friction on the other hand and produce, the problem of avoiding too high temperature that semiconductor crystal wafer is oxidized rapidly.
Alternatively, the rotating control assembly that drives wafer to rotate comprises two runners; The line of described two runners is parallel with the axis of described cleaning brush, and the line of described two runners and cleaning brush lay respectively at described pivot both sides; And wash in semiconductor crystal wafer process, described cleaning brush can be around axial-rotation, and the frictional force that cleaning brush produces described semiconductor crystal wafer around axial-rotation is towards described runner.Technique scheme can improve described cleaning brush and wafer frictional force, to improve the dynamics of scrubbing; Make described cleaning brush that the power of wafer towards runner is provided simultaneously, realize semiconductor crystal wafer at runner to the balance in cleaning brush direction, thereby improve the stability of wafer rotation.
Accompanying drawing explanation
The existing semiconductor crystal wafer of Fig. 1 is scrubbed the structural representation of technique;
Fig. 2 is for adopting existing semiconductor crystal wafer to scrub the Electronic Speculum figure of the semiconductor crystal wafer after technique is scrubbed;
Fig. 3 is for adopting existing semiconductor crystal wafer to scrub the structure chart of the semiconductor device after technique is scrubbed;
Fig. 4 to Fig. 6 is the structural representation of the method for scrubbing one embodiment of semiconductor crystal wafer of the present invention;
Fig. 7 is the structural representation of another embodiment of the method for scrubbing of semiconductor crystal wafer of the present invention;
Fig. 8 is the structural representation of the another embodiment of the method for scrubbing of semiconductor crystal wafer of the present invention;
Fig. 9 is the Electronic Speculum figure comparison diagram of the semiconductor crystal wafer after the method for scrubbing that existing semiconductor crystal wafer is scrubbed technique and semiconductor crystal wafer of the present invention is scrubbed.
The specific embodiment
As described in the background art, at semiconductor crystal wafer, scrub after technique, can occur more serious oxidative phenomena in semiconductor crystal wafer rotation center region, cause semiconductor crystal wafer regional area difference, thereby follow-up semiconductor preparing process is caused to adverse effect.Analyze its reason, continue as shown in Figure 1:
Existing scrubbing in technique, the pivot of semiconductor crystal wafer 100 is passed in the projection meeting of brush 200 axis on semiconductor crystal wafer 100, and along with semiconductor crystal wafer rotates orderly and comprehensive semiconductor crystal wafer 100 surfaces of scrubbing.But in practical operation, semiconductor crystal wafer 100 center is positioned at the axis of brush all the time in the projection of wafer, and brush 200 is exerted pressure to semiconductor crystal wafer 100 surfaces all the time.And in practical operation, it is maximum that the axial location place of brush 200 applies the pressure of semiconductor crystal wafer 100, semiconductor wafer surface heat radiation difficulty corresponding to the axial location of brush 20 is also maximum.For this reason exerting pressure, can produce larger heat in semiconductor crystal wafer 100 center point area under rotation status, the oxidized speed of accelerated semiconductor wafer 100, thereby, as shown in Figure 2, compared to other regions of semiconductor crystal wafer 100, the central area of semiconductor crystal wafer 100 is more easily oxidized and form oxide layer, and along with the time is scrubbed increase, the heat producing increases, and the central area degree of oxidation of semiconductor crystal wafer 100 increases progressively.
For this reason, the invention provides a kind of brushing device of semiconductor crystal wafer and scrub method.The brushing device of semiconductor crystal wafer comprises: rack for cleaning, for placing semiconductor crystal wafer; Rotating control assembly, controlling semiconductor crystal wafer, to take the center of semiconductor crystal wafer be pivot rotation; Cleaning brush, for scrubbing the surface to be cleaned of semiconductor crystal wafer, wherein, the projection of the axis of described cleaning brush on semiconductor crystal wafer is positioned at the non-position of running through described pivot, and during use, described cleaning brush contacts with the pivot of semiconductor crystal wafer.
Adopting the brushing device of described semiconductor crystal wafer to scrub in semiconductor crystal wafer process, cleaning brush contacts with the pivot of semiconductor crystal wafer, can, in semiconductor crystal wafer cleaning process, avoid semiconductor crystal wafer center to be missed, the projection of the axis of cleaning brush on semiconductor crystal wafer, be positioned at the non-position of running through described pivot, make described semiconductor crystal wafer pivot be partial to a side of described cleaning brush axis, to avoid making the pivot of described semiconductor crystal wafer to be positioned at all the time the position of pressurized maximum, improve the radiating rate of the pivot of semiconductor crystal wafer simultaneously, thereby reducing semiconductor crystal wafer scrubs in process, described semiconductor crystal wafer is waited to scrub surperficial pivot and than other parts, is produced the problem of higher heat, and then it is more easily oxidized to avoid semiconductor crystal wafer to wait to scrub surperficial pivot position, form the excessive oxide layer of thickness and cause the local excessively oxidated defect of semiconductor crystal wafer, then improve the preparation technology of follow-up semiconductor devices, improve the performance of the semiconductor devices finally making.
For above-mentioned purpose of the present invention, feature and advantage can more be become apparent, below in conjunction with accompanying drawing, the formation method of metal interconnect structure of take is described in detail specific embodiments of the invention as embodiment.
Fig. 4 and Fig. 6 are the structural representation that semiconductor crystal wafer brushing device of the present invention is scrubbed semiconductor die bowlder one embodiment.Wherein, Fig. 6 is the side structure schematic diagram that in Fig. 4, semiconductor crystal wafer brushing device is scrubbed semiconductor die bowlder.
The brushing device of the semiconductor crystal wafer that the present embodiment provides comprises:
Rack for cleaning (not shown), for placing semiconductor crystal wafer;
Rotating control assembly, take the center of semiconductor crystal wafer and is pivot rotation for controlling semiconductor crystal wafer;
Cleaning brush 400, for scrubbing the surface to be cleaned of semiconductor crystal wafer.Described cleaning brush contacts with the pivot of semiconductor crystal wafer, and the projection of the axis of described cleaning brush 400 on semiconductor crystal wafer is positioned at the non-position of running through described pivot.
During use, the surface label of described cleaning brush 400 is combined in the surface of described semiconductor crystal wafer 300.Between described semiconductor crystal wafer 300 and cleaning brush 400, form the contact-making surface 700 of strip.
In the present embodiment, the axis of described contact-making surface 700 (being the axis that the axis of described cleaning brush 400 is positioned at projection on described semiconductor crystal wafer) is positioned at the non-position of running through described pivot, it is the side that the axis of described contact-making surface 700 is partial to the center of circle (that is, the pivot of semiconductor crystal wafer) of described semiconductor crystal wafer 300.
In the present embodiment, the width of the contact-making surface 700 of described strip is D2, the center of circle O of described semiconductor crystal wafer 300 with described in wait to scrub the contact-making surface 700 on surface 310 the distance of axis be D1, D1≤0.5D2.Thereby make cleaning brush 400 with described in wait to scrub surface 310 contact-making surface 700 cover the center of circle O of described semiconductor crystal wafer 300, and the axis of described cleaning brush 400 and the contact-making surface 700 of semiconductor crystal wafer 300 is without the center of circle O of described semiconductor crystal wafer 300.
Further alternatively, the position relationship of the axis of the center of circle of described semiconductor crystal wafer 300 and described cleaning brush 400 is 0.25D2≤D1≤0.5D2.In this distance range, both can guarantee to scrub the effect of waiting to scrub surface 310, reduce and cause the excessively oxidated defect of semiconductor crystal wafer 300 circle centre position simultaneously.
Alternatively, in the present embodiment, described cleaning brush 400 is cylindric, and can, around axial-rotation, improve the efficiency of scrubbing of semiconductor crystal wafer 300.
In addition, cleaning brush 400 rotation can constantly change the surface contacting of cleaning brush 400 and semiconductor crystal wafer 300, can effectively distribute the heat that semiconductor crystal wafer 300 produces with cleaning brush 400 frictions, the problem of avoiding too high temperature that semiconductor crystal wafer 300 is oxidized rapidly.
Further alternatively, on described cleaning brush 400 surfaces, be provided with hole for water spraying (not shown).In scrubbing the process of semiconductor crystal wafer 300, for spraying deionized water, to accelerate semiconductor crystal wafer 300 surface radiatings.
Alternatively, the size of described cleaning brush 400 is greater than the size of described semiconductor crystal wafer 300, and the two ends of described cleaning brush 400 extend to described outer side surface to be cleaned.
Noticeable thing, in other embodiment except the present embodiment, described cleaning brush 400 also can be only has the brush that a planar structure is scrubbed face, scrub in semiconductor crystal wafer process, described in scrub on the surface to be scrubbed that face is attached to described semiconductor crystal wafer 300.
In the present embodiment, described rotating control assembly comprises two runners 510 and 520 that are arranged on described rack for cleaning.
With reference to figure 4, existing semiconductor crystal wafer mostly is disc, and during use, the sidewall of described runner 510 and 520 sidewall and described semiconductor crystal wafer 300 is tangent, described runner 510 and 520 rotating Vortexes (being clockwise or counterclockwise), thus drive described semiconductor crystal wafer 300 rotations.
Alternatively, the line between described runner 510 and 520 and the axially parallel of described cleaning brush 400 cylindraceous, and the line of described two runners 510 and 520 and described cleaning brush 400 both sides that lay respectively at described pivot O.Technique scheme makes runner 510 (520) in the relative both sides of described semiconductor crystal wafer 300 pivots, apply power respectively with cleaning brush, the stability while rotating effectively to improve semiconductor crystal wafer 300.
Further alternatively, described cleaning brush 400 can be around axial-rotation, and the frictional force that axial-rotation produces described semiconductor crystal wafer 300 is towards described runner 510 and 520, concrete, with reference to figure 5, described semiconductor crystal wafer 300 clockwise around A to rotation, described cleaning brush 400 is along B to rotation, in described cleaning brush 400 rotation processes, generation has cleaning brush 400 towards the frictional force F1 of described runner 510 and 520 directions, thereby improve described cleaning brush 400 and wafer 300 frictional force, and then improve the dynamics of scrubbing; Make described cleaning brush 400 that the power of wafer towards runner 510 and 520 is provided simultaneously, and runner 510 and 520 applies power contrary with F1 of wafer, realize wafer 300 at runner 510 (with 520) to the balance in cleaning brush 400 directions, thereby improve the stability of wafer rotation.
Correspondingly, the present invention also provides a kind of method of scrubbing of semiconductor crystal wafer.Below again in conjunction with Fig. 4 to Fig. 6, with the concrete elaboration of embodiment technical scheme of the present invention.
The present embodiment semiconductor crystal wafer method of scrubbing comprises:
Semiconductor crystal wafer 300 is provided, and described semiconductor crystal wafer 300 can be around the central rotation of semiconductor crystal wafer 300.
Described semiconductor crystal wafer 300 comprises semiconductor base, or semiconductor base and be arranged in described semiconductor base as semiconductor components and devices such as transistors.
In the present embodiment; described semiconductor base is silicon base; but in other embodiments; described semiconductor base also can be germanium, germanium silicon, the GaAs based end or silicon-on-insulator substrate; common semiconductor base all can be used as the semiconductor base in the present embodiment, and described semiconductor-based bottom material and structure do not limit protection scope of the present invention.
In the present embodiment, described semiconductor crystal wafer 300 is disc, comprise wait to scrub surface 310, with described in wait to scrub the relative back side (not shown) in surperficial 310 positions, and described wait to scrub surperficial 310 and the back side between be the sidewall of loop configuration; Describedly wait to scrub surface 310 for disc.
In other embodiment except the present embodiment, described semiconductor crystal wafer 300 can also be rectangle, regular polygon, and other any regular or do not advise side shape, and the structure of described semiconductor crystal wafer 300 does not limit protection scope of the present invention.
After semiconductor crystal wafer is provided, described method also comprises that described semiconductor crystal wafer 300 is placed on rack for cleaning, exposes surface to be scrubbed.
Described rack for cleaning comprises rotating control assembly, rotates, to improve cleaning efficiency thereby control described semiconductor crystal wafer 300 around pivot.Continuation is with reference to figure 4, and in the present embodiment, described rotating control assembly comprises runner 510 and 520.In the present embodiment, the sidewall of described runner 510 and 520 sidewall and discoidal semiconductor crystal wafer 300 is tangent, described runner 510 and 520 rotating Vortexes (being clockwise or counterclockwise), thereby drive described semiconductor crystal wafer 300 rotations, in addition, described runner 510 and 520 sidewall and 300 frictions of described semiconductor crystal wafer, can play the effect of cleaning described semiconductor crystal wafer 300 sidewalls.
What described cleaning brush 400 was placed in to described semiconductor crystal wafer 300 waits to scrub surperficial 310 tops, and waits to scrub surface 310 and contact with described, with when described semiconductor crystal wafer 300 rotation, waits to scrub surperficial 310 different parts described in scrubbing.
Wherein, the projection of the axis of described cleaning brush 400 on semiconductor crystal wafer is positioned at the non-position of running through described pivot,, described cleaning brush 400 covers the described center of circle with waiting the contact-making surface of scrubbing surface 310, and a side in the center of circle (that is, the pivot of semiconductor crystal wafer) of described semiconductor crystal wafer is partial in the position of described cleaning brush 400.
In conjunction with reference to shown in Figure 4 and 5, in the present embodiment, described cleaning brush 400 is cylindric.Described cleaning brush 400 be placed on described semiconductor crystal wafer 300 wait to scrub on surface 310, simultaneously to described, wait to scrub surface 310 and apply suitable pressure.
In the present embodiment, described cleaning brush 400 with described in wait to scrub surface 310 contact-making surface 700 be strip structure.In the present embodiment, the width of the contact-making surface 700 of described strip is D2, the axis of described cleaning brush 400 is D1 in the distance of the projection (being described contact-making surface 700 axis along its length) of described semiconductor crystal wafer 300 and the center of circle O of described semiconductor crystal wafer 300, D1≤0.5D2.Thereby make cleaning brush 400 with described in wait to scrub surface 310 contact-making surface 700 cover the center of circle O of described semiconductor crystal wafer 300, and the axis of described cleaning brush 400 and the contact-making surface 700 of semiconductor crystal wafer 300 is without the center of circle O of described semiconductor crystal wafer 300.
Described cleaning brush 400 and the contact-making surface 700 of waiting to scrub surface 310 cover the center of circle O of semiconductor crystal wafers 300, with in semiconductor crystal wafer 300 rotary courses, guarantee that the centre of semiconductor crystal wafer 300 is in contact and scrubbed, improve the washing effect of waiting to scrub surface 310 with cleaning brush 400.
To described, wait scrubbing surface, 310 apply after suitable pressure, the pressure that semiconductor crystal wafer 300 corresponding to described cleaning brush 300 axial location is subject to is maximum, and based on axis, be positioned at the center position of described contact-making surface 700, it is the poorest that the waiting of the semiconductor crystal wafer 300 that described cleaning brush 300 axial location are corresponding scrubbed the thermal diffusivity on surface 310.In the present embodiment, the center of circle O of described semiconductor crystal wafer 300 is positioned at a side of the axis of cleaning brush 300, , avoid making the pivot of described semiconductor crystal wafer to be positioned at all the time the position of pressurized maximum, the O place, the center of circle that avoids waiting scrubbing surface 310 is the Frotteurism in maximal pressure all the time, improve the radiating rate at the O place, the center of circle of semiconductor crystal wafer 300 simultaneously, thereby alleviate the heat producing in place, wafer 300 center in described wafer 300 rotary courses, reduce semiconductor crystal wafer 300 wait scrub surperficial 310 centers than the problem of waiting to scrub 310 other positions, surface and produce higher heat, and then avoid causing the local excessively oxidated defect of semiconductor crystal wafer in the center excessive oxide layer of formation thickness of scrubbing surface 310 of waiting of semiconductor crystal wafer 300.
Further alternatively, the position relationship of the axis of the center of circle of described semiconductor crystal wafer 300 and described cleaning brush 400 is 0.25 * D2≤D1≤0.5 * D2.In this distance range, both can guarantee to scrub the effect of waiting to scrub surface 310, reduce and cause the excessively oxidated defect of semiconductor crystal wafer 300 circle centre position simultaneously.
In the present embodiment, along described cleaning brush 400 Axis Extension directions, described cleaning brush 400 two ends extend to the outside of waiting to scrub surface 310 of described semiconductor crystal wafer 300, thereby guarantee in semiconductor crystal wafer 300 rotary courses, described cleaning brush 300 waits to scrub 310 each positions, surface described in can scrubbing.
In the present embodiment, in 300 rotations of described semiconductor crystal wafer simultaneously, to described semiconductor crystal wafer 300 wait to scrub surperficial 310 jet cleaning liquid 600, to improve the efficiency of cleaning described semiconductor crystal wafer 300.
In the present embodiment, in described semiconductor crystal wafer 300 rotations simultaneously, described cleaning brush 400 is around axial-rotation.Thereby when scrubbing semiconductor crystal wafer 300, constantly change the contact-making surface 700 of cleaning brush 400 and semiconductor crystal wafer 300, that can remove on the one hand semiconductor crystal wafer 300 waits to scrub the impurity on surface 310, improves semiconductor crystal wafer 300 cleaning efficiencies; Can alleviate on the other hand the long-time heat producing with semiconductor crystal wafer 300 frictions in the same position of cleaning brush 400, with what reduce semiconductor crystal wafer 300, wait to scrub surperficial 310 oxidized degree.
Alternatively, in the present embodiment, on the surface of described cleaning brush 400, be provided with hole for water spraying (not shown), in cleaning the process of semiconductor crystal wafer 300, described hole for water spraying is used for spraying deionized water, cleaning semiconductor crystal wafer 300 simultaneously, accelerate semiconductor crystal wafer 300 and cleaning brush 400 cooling, reduce cleaning brush 400 with described in wait that the contact-making surface of scrubbing surface 310 is rapidly heated and causes and wait to scrub surface 310 oxidized degree.In addition, technique scheme also can alleviate described cleaning brush 400 based on the semiconductor crystal wafer 300 friction extent of damages.
Continuation is with reference to figure 1, in the present embodiment, be arranged at the runner 510 and 520 of described semiconductor crystal wafer 300 both sides not only for driving described semiconductor crystal wafer 300 to rotate, and clean the sidewall of described semiconductor crystal wafer 300, and can be by regulating the distance between described two runners 510 and 520, to regulate the distance between the center of circle O of described semiconductor crystal wafer 300 and the axis of described cleaning brush 400.
Alternatively, the line between described runner 510 and 520 is parallel with the axis of described cleaning brush 400 cylindraceous, and the line of the axis of described cleaning brush 400 and described two runners 510 and 520 lays respectively at the both sides of described pivot O.Like this can be so that apply power in the relative both sides of described semiconductor crystal wafer 300 pivots, thus the stability while effectively improving semiconductor crystal wafer 300 rotation.
Shown in figure 7, in another embodiment of the present invention, can another cleaning brush 410 can be set equally at the back side of described semiconductor crystal wafer 300, in cleaning semiconductor crystal wafer 300 processes, when this another cleaning brush 410 can effectively clean the back side of described semiconductor crystal wafer 300, play support semiconductor wafer 300.Alternatively, this another cleaning brush 410 be positioned at semiconductor crystal wafer 300 wait to scrub the cleaning brush 400 position corresponding settings of surface on 310, described cleaning brush 400 and 410 be take described semiconductor crystal wafer 300 and is mirror image symmetry as minute surface.
Alternatively, the rotating speed of described cleaning brush 410 is close with described cleaning brush 400, and the frictional force that described cleaning brush 410 axial-rotations produce described semiconductor crystal wafer 300 is towards described runner 510 and 520.Concrete, with reference to figure 7, described semiconductor crystal wafer 300 clockwise around A to rotation, described cleaning brush 410 is along C to rotation, and then improves the stability of described semiconductor crystal wafer 300 rotations.But the present invention is not construed as limiting for the structure of described another cleaning brush 410.
In the embodiment shown in Fig. 4 to Fig. 6, described rotating control assembly only comprises two runners, but in other embodiments, described rotating control assembly can comprise and is more than or equal to 3 described runners, each runner is arranged on described wafer 300 peripheries, and each runner sidewall and wafer 300 are tangent, thereby control described wafer 300 rotations.In Fig. 8 structural representation that is another embodiment of the present invention, in all sides of described semiconductor crystal wafer 300, be provided with 3 runners 530,540 and 550.The quantity that increases runner can effectively improve the stability of semiconductor crystal wafer rotation.
With reference to figure 9, Fig. 9 is the Electronic Speculum figure of the semiconductor crystal wafer after the method for scrubbing that existing semiconductor crystal wafer is scrubbed technique and semiconductor crystal wafer of the present invention is scrubbed.Wherein, what the top Electronic Speculum figure showed is just through CMP, to grind, and without the semiconductor wafer surface structure of scrubbing, second Electronic Speculum figure, show be through existing scrub that semiconductor wafer surface structure after technique, the 3rd Electronic Speculum figure and the 4th Electronic Speculum figure show be to adopt the technique of scrubbing embodiment of the method 1 of semiconductor crystal wafer of the present invention to scrub after semiconductor wafer surface structure, wherein, in the 3rd Electronic Speculum figure, D1=0.4 * D2, in the 4th Electronic Speculum figure, D1=0.1 * D2.Wherein, D2 is the width of the contact-making surface 700 of cleaning brush and semiconductor crystal wafer, and the axis that D1 is described cleaning brush is projected to the distance of the pivot of described semiconductor crystal wafer on described semiconductor crystal wafer.
Wherein, in the Electronic Speculum figure of the top, the waiting of described semiconductor crystal wafer 300 scrubs that the color on surface 310 is the darkest, and wherein 700 for waiting to scrub surperficial 310 centres, waiting to scrub surperficial 310 impurity after remaining CMP; Electronic Speculum figure below of contrast, known after scrubbing technique, effectively removed the impurity of semiconductor wafer surface, and it is slightly oxidized in the process of scrubbing to wait to scrub surface 310, thereby waits to scrub surface 310 and shoal; But shown in second Electronic Speculum figure (D1=0), wait to scrub the centre 730 on surface 310 and compare with periphery position, color whiting obviously, illustrates that centre is with seriously oxidized.And compare with second Electronic Speculum figure (D1=0), in the 3rd Electronic Speculum figure (D1=0.4D2), wait to scrub the centre 710 on surface 310, darker with the color in centre 720 of waiting to scrub surface 310 in the 4th Electronic Speculum figure (D1=0.1D2), oxidized degree is lower, illustrate and adopt the method for scrubbing of semiconductor crystal wafer of the present invention in effective removal of contamination while, can suppress to wait to scrub surperficial 310 centres by severe oxidation.
Contrast again the 3rd Electronic Speculum figure (D1=0.4D2) and the 4th Electronic Speculum figure (D1=0.1D2), the color in the centre 710 in the 3rd Electronic Speculum figure (D1=0.4D2) is darker than the color in the centre 720 in Fig. 9 d, centre 700 close to the semiconductor crystal wafer of not scrubbing, what semiconductor crystal wafer 300 in the 3rd Electronic Speculum figure (D1=0.4D2) was described waits that to scrub the centre degree of oxidation on surface 310 minimum, the technical scheme of the method for scrubbing of the semiconductor crystal wafer that the 3rd Electronic Speculum figure (D1=0.4D2) is corresponding, can contribute to better to suppress to scrub in semiconductor crystal wafer process, it is oxidized that semiconductor crystal wafer waits to scrub surperficial 310 centres.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with claim limited range.
Claims (10)
1. a brushing device for semiconductor crystal wafer, is characterized in that, comprising:
Rack for cleaning, for placing semiconductor crystal wafer;
Rotating control assembly, controlling semiconductor crystal wafer, to take the center of semiconductor crystal wafer be pivot rotation;
Cleaning brush, for scrubbing the surface to be cleaned of semiconductor crystal wafer, described cleaning brush contacts with the pivot of semiconductor crystal wafer, and the projection of the axis of described cleaning brush on semiconductor crystal wafer is positioned at the non-position of running through described pivot.
2. the brushing device of semiconductor crystal wafer as claimed in claim 1, is characterized in that, described cleaning brush is cylindric, and can be around axial-rotation.
3. the brushing device of semiconductor crystal wafer as claimed in claim 2, is characterized in that, waits to scrub surperficial outside, edge described in the two ends of cylindric cleaning brush extend to.
4. the brushing device of semiconductor crystal wafer as claimed in claim 1, is characterized in that, described cleaning brush surface is provided with hole for water spraying, for spraying deionized water in the process of scrubbing semiconductor crystal wafer.
5. the brushing device of semiconductor crystal wafer as claimed in claim 1, is characterized in that, described semiconductor crystal wafer is disc, and described rotating control assembly comprises at least two runners;
The sidewall of described runner and described semiconductor crystal wafer sidewall are tangent, and described at least two runner rotating in same directions are to drive described semiconductor crystal wafer around the central rotation of semiconductor crystal wafer.
6. the brushing device of semiconductor crystal wafer as claimed in claim 5, is characterized in that, described rotating control assembly comprises two runners;
The line of described two runners is parallel with the axis of described cleaning brush, and the line of described two runners and cleaning brush lay respectively at the both sides of described pivot.
7. the brushing device of semiconductor crystal wafer as claimed in claim 6, is characterized in that, described cleaning brush is cylindric, and described cleaning brush can be around axial-rotation, and the frictional force that cleaning brush produces described semiconductor crystal wafer around axial-rotation is towards described runner.
8. the brushing device of semiconductor crystal wafer as claimed in claim 1, is characterized in that, the contact-making surface of described cleaning brush and semiconductor crystal wafer is strip, and the width of described strip is D2;
Described pivot is D1 to the distance of described contact-making surface length-wise axis, and D1 and D2 meet the relation of 0 < D1≤0.5D2.
9. the brushing device of semiconductor crystal wafer as claimed in claim 1, is characterized in that, the contact-making surface of described cleaning brush and semiconductor crystal wafer is strip, and the width of described strip is D2;
Described pivot is D1 to the distance of described contact-making surface length-wise axis, and D1 and D2 meet 0.25D2≤D1≤0.5D2.
10. the method for scrubbing of semiconductor crystal wafer, is characterized in that, comprising:
Semiconductor crystal wafer is provided, and described semiconductor crystal wafer comprises surface to be scrubbed, and the center of described semiconductor crystal wafer is pivot;
On the surface to be scrubbed of semiconductor crystal wafer, place cleaning brush, make described cleaning brush and pivot phase-contact surface, and make the projection of described cleaning brush axis on semiconductor crystal wafer be positioned at the non-position of running through described pivot;
Make semiconductor crystal wafer around pivot rotation, to scrub the surface to be scrubbed of semiconductor crystal wafer by cleaning brush.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410352938.XA CN104174601B (en) | 2014-07-23 | 2014-07-23 | The brushing device of semiconductor crystal wafer and scrub methods |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410352938.XA CN104174601B (en) | 2014-07-23 | 2014-07-23 | The brushing device of semiconductor crystal wafer and scrub methods |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104174601A true CN104174601A (en) | 2014-12-03 |
| CN104174601B CN104174601B (en) | 2016-03-09 |
Family
ID=51956106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410352938.XA Active CN104174601B (en) | 2014-07-23 | 2014-07-23 | The brushing device of semiconductor crystal wafer and scrub methods |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104174601B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109461675A (en) * | 2018-10-18 | 2019-03-12 | 上海华虹宏力半导体制造有限公司 | Detect the cleaning equipment and its cleaning method of position of silicon wafer exception |
| CN109731814A (en) * | 2018-12-27 | 2019-05-10 | 中国电子科技集团公司第二研究所 | The wafer brushing device adjusted into brush position can dynamically be controlled |
| CN109731813A (en) * | 2018-12-27 | 2019-05-10 | 中国电子科技集团公司第二研究所 | The wafer scrub methods adjusted into brush position can dynamically be controlled |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0878831A2 (en) * | 1997-05-15 | 1998-11-18 | Kabushiki Kaisha Toshiba | Double side cleaning apparatus for semiconductor substrate |
| JP2002353183A (en) * | 2001-05-28 | 2002-12-06 | Nisso Engineering Co Ltd | Wafer-cleaning device |
| CN1874854A (en) * | 2003-10-28 | 2006-12-06 | 应用材料公司 | Scrubber box and methods for using the same |
| CN101180711A (en) * | 2005-04-11 | 2008-05-14 | 斗山Mecatec株式会社 | Semiconductor chip cleaning system |
| CN201898118U (en) * | 2010-12-06 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning device |
| CN102479669A (en) * | 2010-11-29 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Wafer brush cleaning device and wafer brush cleaning method |
| CN102773240A (en) * | 2011-05-10 | 2012-11-14 | 南亚科技股份有限公司 | Post-CMP wafer cleaning apparatus |
-
2014
- 2014-07-23 CN CN201410352938.XA patent/CN104174601B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0878831A2 (en) * | 1997-05-15 | 1998-11-18 | Kabushiki Kaisha Toshiba | Double side cleaning apparatus for semiconductor substrate |
| JP2002353183A (en) * | 2001-05-28 | 2002-12-06 | Nisso Engineering Co Ltd | Wafer-cleaning device |
| CN1874854A (en) * | 2003-10-28 | 2006-12-06 | 应用材料公司 | Scrubber box and methods for using the same |
| CN101180711A (en) * | 2005-04-11 | 2008-05-14 | 斗山Mecatec株式会社 | Semiconductor chip cleaning system |
| CN102479669A (en) * | 2010-11-29 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | Wafer brush cleaning device and wafer brush cleaning method |
| CN201898118U (en) * | 2010-12-06 | 2011-07-13 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning device |
| CN102773240A (en) * | 2011-05-10 | 2012-11-14 | 南亚科技股份有限公司 | Post-CMP wafer cleaning apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109461675A (en) * | 2018-10-18 | 2019-03-12 | 上海华虹宏力半导体制造有限公司 | Detect the cleaning equipment and its cleaning method of position of silicon wafer exception |
| CN109731814A (en) * | 2018-12-27 | 2019-05-10 | 中国电子科技集团公司第二研究所 | The wafer brushing device adjusted into brush position can dynamically be controlled |
| CN109731813A (en) * | 2018-12-27 | 2019-05-10 | 中国电子科技集团公司第二研究所 | The wafer scrub methods adjusted into brush position can dynamically be controlled |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104174601B (en) | 2016-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3645528B2 (en) | Polishing method and semiconductor device manufacturing method | |
| US8851959B2 (en) | Chemical mechanical polishing device and polishing element | |
| JPH10249710A (en) | Abrasive pad with eccentric groove for cmp | |
| JPH08172064A (en) | Semiconductor wafer treating device and semiconductor wafer processing method | |
| KR102333209B1 (en) | Substrate polishing apparatus | |
| CN104174601A (en) | Device and method for scrubbing semiconductor wafer | |
| US20060079159A1 (en) | Chemical mechanical polish with multi-zone abrasive-containing matrix | |
| JP2008311481A (en) | Substrate cleaning method, substrate cleaning device, and semiconductor manufacturing method | |
| WO2016067563A1 (en) | Substrate cleaning roller, substrate cleaning device, and substrate cleaning method | |
| TWI816544B (en) | Grinding stage, grinding device, grinding method and silicon wafer | |
| TWI517234B (en) | Liquid processing device, liquid processing method, and storage medium | |
| CN110957208A (en) | Wafer edge washing method and wafer washing device | |
| US11471997B2 (en) | Polishing pad, polishing apparatus and a method for polishing silicon wafer | |
| JP2018107292A (en) | Substrate processing method and substrate processing device | |
| JP5470746B2 (en) | Manufacturing method of semiconductor device | |
| JP2007290085A (en) | Polishing device and retainer ring used for the same | |
| JP2001358110A (en) | Scrub-cleaning device and manufacturing method for semiconductor device using the same | |
| CN109590897B (en) | Polishing pad and polishing method | |
| KR20030032305A (en) | Polishing Platen of Chemical Mechanical Polishing Equipment and method for plating | |
| JP2001009386A (en) | Substrate washing apparatus | |
| JP2005177897A (en) | Polishing method, polishing device, and method of manufacturing semiconductor device | |
| KR101584427B1 (en) | Brush unit for cleaning wafer | |
| JP2006332386A (en) | Device and method for washing substrate | |
| KR100826590B1 (en) | Apparatus for chemical mechanical polishing | |
| US20230021149A1 (en) | Chemical-mechanical planarization pad and methods of use |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |