CN104169800B - 投射曝光设备的照明光学单元 - Google Patents

投射曝光设备的照明光学单元 Download PDF

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Publication number
CN104169800B
CN104169800B CN201380013861.7A CN201380013861A CN104169800B CN 104169800 B CN104169800 B CN 104169800B CN 201380013861 A CN201380013861 A CN 201380013861A CN 104169800 B CN104169800 B CN 104169800B
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CN
China
Prior art keywords
illumination
facet
incidence
illumination light
mirror
Prior art date
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Application number
CN201380013861.7A
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English (en)
Chinese (zh)
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CN104169800A (zh
Inventor
I.桑格
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Carl Zeiss SMT GmbH
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Carl Zeiss SMT GmbH
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Publication of CN104169800A publication Critical patent/CN104169800A/zh
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0019—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors)
    • G02B19/0023—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having reflective surfaces only (e.g. louvre systems, systems with multiple planar reflectors) at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0095—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with ultraviolet radiation
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/30—Polarising elements
    • G02B5/3025—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state
    • G02B5/3066—Polarisers, i.e. arrangements capable of producing a definite output polarisation state from an unpolarised input state involving the reflection of light at a particular angle of incidence, e.g. Brewster's angle
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Microscoopes, Condenser (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Polarising Elements (AREA)
CN201380013861.7A 2012-03-14 2013-03-05 投射曝光设备的照明光学单元 Active CN104169800B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261610532P 2012-03-14 2012-03-14
US61/610,532 2012-03-14
DE102012203950.3 2012-03-14
DE102012203950A DE102012203950A1 (de) 2012-03-14 2012-03-14 Beleuchtungsoptik für eine Projektionsbelichtungsanlage
PCT/EP2013/054404 WO2013135532A1 (en) 2012-03-14 2013-03-05 Illumination optical unit for a projection exposure apparatus

Publications (2)

Publication Number Publication Date
CN104169800A CN104169800A (zh) 2014-11-26
CN104169800B true CN104169800B (zh) 2017-02-22

Family

ID=49043911

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380013861.7A Active CN104169800B (zh) 2012-03-14 2013-03-05 投射曝光设备的照明光学单元

Country Status (6)

Country Link
US (1) US9195057B2 (enExample)
JP (1) JP6238140B2 (enExample)
CN (1) CN104169800B (enExample)
DE (1) DE102012203950A1 (enExample)
TW (1) TWI610140B (enExample)
WO (1) WO2013135532A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011078928A1 (de) 2011-07-11 2013-01-17 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
DE102012209132A1 (de) * 2012-05-31 2013-12-05 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie
DE102012219936A1 (de) * 2012-10-31 2014-04-30 Carl Zeiss Smt Gmbh EUV-Lichtquelle zur Erzeugung eines Nutz-Ausgabestrahls für eine Projektionsbelichtungsanlage
DE102013202590A1 (de) 2013-02-19 2014-09-04 Carl Zeiss Smt Gmbh EUV-Lichtquelle zur Erzeugung eines Nutz-Ausgabestrahls für eine Projektionsbelichtungsanlage
CN108020994B (zh) * 2016-10-31 2020-01-24 上海微电子装备（集团）股份有限公司 一种照明装置
CN113557477B (zh) * 2019-03-13 2024-07-02 Asml控股股份有限公司 光刻设备、量测设备、光学系统和方法
DE102019214269A1 (de) * 2019-09-19 2021-03-25 Carl Zeiss Smt Gmbh Facettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage
DE102020116091A1 (de) * 2019-10-30 2021-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. Abstimmbare beleuchtungsvorrichtung fürlithographiesysteme
DE102021204170B4 (de) * 2021-04-27 2024-09-26 Carl Zeiss Smt Gmbh Messvorrichtung sowie Verfahren zur Messung einer Wirkung einer wellenlängenabhängigen Messlicht-Reflektivität sowie einer Wirkung einer Polarisation von Messlicht auf eine Messlicht-Beaufschlagung einer Lithografiemaske
DE102021210491A1 (de) * 2021-09-21 2023-03-23 Carl Zeiss Smt Gmbh Optische Komponentengruppe, insbesondere zum Einsatz in einer Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
DE102021210492A1 (de) * 2021-09-21 2023-03-23 Carl Zeiss Smt Gmbh EUV-Beleuchtungseinrichtung, sowie Verfahren zum Betreiben einer für den Betrieb im EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage
CN116819857A (zh) * 2023-08-22 2023-09-29 苏州默然光电科技有限公司 一种照明单元、视觉检测系统及其方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060138364A1 (en) * 2004-12-01 2006-06-29 Akira Miyake X-ray generator and exposure apparatus having the same
WO2012025365A1 (en) * 2010-08-25 2012-03-01 Carl Zeiss Smt Gmbh Imaging optical system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6859515B2 (en) 1998-05-05 2005-02-22 Carl-Zeiss-Stiftung Trading Illumination system, particularly for EUV lithography
DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
JP2003506881A (ja) * 1999-07-30 2003-02-18 カール ツァイス シュティフトゥング トレイディング アズ カール ツァイス Ｅｕｖ照明光学系の射出瞳における照明分布の制御
DE10317667A1 (de) 2003-04-17 2004-11-18 Carl Zeiss Smt Ag Optisches Element für ein Beleuchtungssystem
US20060138349A1 (en) * 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5436853B2 (ja) * 2005-04-20 2014-03-05 カール・ツァイス・エスエムティー・ゲーエムベーハー 投影露光系及び偏光光学素子
DE102006020734A1 (de) * 2006-05-04 2007-11-15 Carl Zeiss Smt Ag Beleuchtungssystem für die EUV-Lithographie sowie erstes und zweites optisches Element zum Einsatz in einem derartigen Beleuchtungssystem
DE102007047446A1 (de) * 2007-10-04 2009-04-09 Carl Zeiss Smt Ag Optisches Element mit wenigstens einem elektrisch leitenden Bereich und Beleuchtungssystem mit einem solchen Element
CN101946190B (zh) 2008-02-15 2013-06-19 卡尔蔡司Smt有限责任公司 微光刻的投射曝光设备使用的分面镜
DE102008002749A1 (de) 2008-06-27 2009-12-31 Carl Zeiss Smt Ag Beleuchtungsoptik für die Mikrolithografie
WO2010049076A2 (de) * 2008-10-20 2010-05-06 Carl Zeiss Smt Ag Optische baugruppe zur führung eines strahlungsbündels
US8164046B2 (en) * 2009-07-16 2012-04-24 Carl Zeiss Smt Gmbh Illumination system for illuminating a mask in a microlithographic projection exposure apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060138364A1 (en) * 2004-12-01 2006-06-29 Akira Miyake X-ray generator and exposure apparatus having the same
WO2012025365A1 (en) * 2010-08-25 2012-03-01 Carl Zeiss Smt Gmbh Imaging optical system

Also Published As

Publication number Publication date
CN104169800A (zh) 2014-11-26
US9195057B2 (en) 2015-11-24
DE102012203950A1 (de) 2013-09-19
US20140362360A1 (en) 2014-12-11
JP2015511770A (ja) 2015-04-20
TW201351057A (zh) 2013-12-16
JP6238140B2 (ja) 2017-11-29
WO2013135532A1 (en) 2013-09-19
TWI610140B (zh) 2018-01-01

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